WO2008102687A1 - 圧電/電歪素子 - Google Patents
圧電/電歪素子 Download PDFInfo
- Publication number
- WO2008102687A1 WO2008102687A1 PCT/JP2008/052432 JP2008052432W WO2008102687A1 WO 2008102687 A1 WO2008102687 A1 WO 2008102687A1 JP 2008052432 W JP2008052432 W JP 2008052432W WO 2008102687 A1 WO2008102687 A1 WO 2008102687A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- piezoelectric
- electrode film
- film
- reduced
- piezoelectric device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
- H10N30/053—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by integrally sintering piezoelectric or electrostrictive bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14258—Multi layer thin film type piezoelectric element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
白金又は白金を主成分とする合金の電極膜であって膜厚が2.0μm以下のものと圧電/電歪膜とを積層した積層型の圧電/電歪素子の製造にあたって、電極膜又は圧電/電歪膜に酸化イットリウム(Y2O3)及び酸化セリウム(CeO2)の両方又は一方を添加しておき、電極膜と圧電/電歪膜とを同時焼成する。これにより、電極膜の膜厚を薄くすること、電極膜の耐熱性を向上すること及び圧電/電歪特性の経時変化を小さくすることを同時に実現することができ、初期圧電/電歪特性が良好で圧電/電歪特性の経時変化が小さい圧電/電歪素子を得ることができる。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08711274.4A EP2124269B1 (en) | 2007-02-20 | 2008-02-14 | Piezoelectric device |
| JP2009500155A JP5295945B2 (ja) | 2007-02-20 | 2008-02-14 | 圧電/電歪素子 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US89063607P | 2007-02-20 | 2007-02-20 | |
| US60/890,636 | 2007-02-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008102687A1 true WO2008102687A1 (ja) | 2008-08-28 |
Family
ID=39709964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/052432 Ceased WO2008102687A1 (ja) | 2007-02-20 | 2008-02-14 | 圧電/電歪素子 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8742650B2 (ja) |
| EP (1) | EP2124269B1 (ja) |
| JP (1) | JP5295945B2 (ja) |
| WO (1) | WO2008102687A1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7545084B2 (en) * | 2006-07-20 | 2009-06-09 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive ceramic composition, piezoelectric/electrostrictive device, and method of producing the same |
| KR101582392B1 (ko) * | 2010-10-05 | 2016-01-04 | 모토로라 모빌리티 엘엘씨 | 신뢰할 수 있는 제어 채널 성능을 위한 방법 및 장치 |
| JP2013197553A (ja) * | 2012-03-22 | 2013-09-30 | Hitachi Cable Ltd | 圧電体膜付き基板、圧電体膜素子及びその製造方法 |
| JP6460387B2 (ja) * | 2015-01-26 | 2019-01-30 | Tdk株式会社 | 圧電薄膜素子、圧電アクチュエータ、圧電センサ、並びにハードディスクドライブ、及びインクジェットプリンタ装置 |
| JP6426061B2 (ja) * | 2015-07-02 | 2018-11-21 | 富士フイルム株式会社 | 積層薄膜構造体の製造方法、積層薄膜構造体及びそれを備えた圧電素子 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002328319A (ja) * | 2001-03-02 | 2002-11-15 | Ngk Insulators Ltd | 圧電/電歪デバイス及びその製造方法 |
| JP2003152235A (ja) * | 2001-08-31 | 2003-05-23 | Ngk Insulators Ltd | セラミック素子 |
| JP2006121012A (ja) * | 2004-10-25 | 2006-05-11 | Ngk Insulators Ltd | 圧電/電歪デバイス |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3419679B2 (ja) * | 1998-02-12 | 2003-06-23 | ティーディーケイ株式会社 | 圧電セラミックス |
| JP3931513B2 (ja) * | 1999-02-08 | 2007-06-20 | 株式会社村田製作所 | 圧電磁器組成物およびそれを用いた圧電セラミック素子 |
| US6518690B2 (en) * | 2000-04-19 | 2003-02-11 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive film type elements and process for producing the same |
| JP3868285B2 (ja) | 2001-12-20 | 2007-01-17 | 日本碍子株式会社 | 圧電素子、及びその製造方法 |
| JP3512379B2 (ja) * | 2000-09-20 | 2004-03-29 | 日本碍子株式会社 | 圧電体素子、及びその製造方法 |
| JP3953806B2 (ja) | 2001-12-20 | 2007-08-08 | 日本碍子株式会社 | 圧電素子、及びその製造方法 |
| US6624549B2 (en) | 2001-03-02 | 2003-09-23 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive device and method of fabricating the same |
| JP3957528B2 (ja) * | 2002-03-05 | 2007-08-15 | 日本碍子株式会社 | 圧電/電歪膜型素子 |
| JP4208234B2 (ja) * | 2003-03-24 | 2009-01-14 | 株式会社ノリタケカンパニーリミテド | 圧電セラミック材用導体ペースト及びその利用 |
| US7132057B2 (en) * | 2003-10-15 | 2006-11-07 | Piezotech, Llc | Compositions for high power piezoelectric ceramics |
| JP4571009B2 (ja) | 2005-04-25 | 2010-10-27 | 株式会社ノリタケカンパニーリミテド | 白金ペースト |
| JP2006299385A (ja) | 2005-04-25 | 2006-11-02 | Noritake Co Ltd | 白金粉末、その製造方法、および圧電セラミック材用白金ペースト |
| JP2006335576A (ja) * | 2005-05-31 | 2006-12-14 | Nissan Motor Co Ltd | 圧電材料 |
-
2008
- 2008-02-14 JP JP2009500155A patent/JP5295945B2/ja active Active
- 2008-02-14 EP EP08711274.4A patent/EP2124269B1/en not_active Not-in-force
- 2008-02-14 WO PCT/JP2008/052432 patent/WO2008102687A1/ja not_active Ceased
- 2008-02-15 US US12/032,128 patent/US8742650B2/en active Active
-
2014
- 2014-02-24 US US14/187,879 patent/US9178130B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002328319A (ja) * | 2001-03-02 | 2002-11-15 | Ngk Insulators Ltd | 圧電/電歪デバイス及びその製造方法 |
| JP2003152235A (ja) * | 2001-08-31 | 2003-05-23 | Ngk Insulators Ltd | セラミック素子 |
| JP2006121012A (ja) * | 2004-10-25 | 2006-05-11 | Ngk Insulators Ltd | 圧電/電歪デバイス |
Non-Patent Citations (1)
| Title |
|---|
| See also references of EP2124269A4 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5295945B2 (ja) | 2013-09-18 |
| EP2124269A1 (en) | 2009-11-25 |
| US8742650B2 (en) | 2014-06-03 |
| US20140167567A1 (en) | 2014-06-19 |
| JPWO2008102687A1 (ja) | 2010-05-27 |
| EP2124269B1 (en) | 2013-05-08 |
| EP2124269A4 (en) | 2010-11-10 |
| US9178130B2 (en) | 2015-11-03 |
| US20080213575A1 (en) | 2008-09-04 |
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| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
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