WO2008123411A1 - プラズマ生成装置およびプラズマ成膜装置 - Google Patents

プラズマ生成装置およびプラズマ成膜装置 Download PDF

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Publication number
WO2008123411A1
WO2008123411A1 PCT/JP2008/056063 JP2008056063W WO2008123411A1 WO 2008123411 A1 WO2008123411 A1 WO 2008123411A1 JP 2008056063 W JP2008056063 W JP 2008056063W WO 2008123411 A1 WO2008123411 A1 WO 2008123411A1
Authority
WO
WIPO (PCT)
Prior art keywords
impedance matching
plasma
antenna elements
film forming
generating apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/056063
Other languages
English (en)
French (fr)
Inventor
Yasunari Mori
Kazuki Takizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Engineering and Shipbuilding Co Ltd
Original Assignee
Mitsui Engineering and Shipbuilding Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Engineering and Shipbuilding Co Ltd filed Critical Mitsui Engineering and Shipbuilding Co Ltd
Priority to US12/531,264 priority Critical patent/US20100095888A1/en
Priority to KR1020097018549A priority patent/KR101045271B1/ko
Priority to EP08722922A priority patent/EP2139303A4/en
Publication of WO2008123411A1 publication Critical patent/WO2008123411A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/26—Supports; Mounting means by structural association with other equipment or articles with electric discharge tube
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　プラズマ生成装置は、アンテナ素子へ高周波信号を給電する給電線と接続された、インピーダンス整合のための特性パラメータが可変なインピーダンス整合部材と、インピーダンス整合部材に対応して設けられ、インピーダンス整合部材と少なくとも２つ以上のアンテナ素子とを接続する分配配線と、インピーダンス整合部材の特性パラメータを変化させて、分配配線を介してインピーダンス整合部材と接続された少なくとも２つ以上のアンテナ素子のインピーダンス整合状態を同時に変化させる制御部と、を有する。これにより、アンテナ素子に比べてインピーダンス整合器の数が少なく、インピーダンス整合に係る機構が比較的コンパクトな装置となる。
PCT/JP2008/056063 2007-03-30 2008-03-28 プラズマ生成装置およびプラズマ成膜装置 Ceased WO2008123411A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/531,264 US20100095888A1 (en) 2007-03-30 2008-03-28 Plasma generating apparatus and plasma film forming apparatus
KR1020097018549A KR101045271B1 (ko) 2007-03-30 2008-03-28 플라즈마 생성 장치 및 플라즈마 성막 장치
EP08722922A EP2139303A4 (en) 2007-03-30 2008-03-28 PLASMA GENERATING DEVICE AND PLASMA FILMING DEVICE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007091402A JP4324205B2 (ja) 2007-03-30 2007-03-30 プラズマ生成装置およびプラズマ成膜装置
JP2007-091402 2007-03-30

Publications (1)

Publication Number Publication Date
WO2008123411A1 true WO2008123411A1 (ja) 2008-10-16

Family

ID=39830896

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056063 Ceased WO2008123411A1 (ja) 2007-03-30 2008-03-28 プラズマ生成装置およびプラズマ成膜装置

Country Status (6)

Country Link
US (1) US20100095888A1 (ja)
EP (1) EP2139303A4 (ja)
JP (1) JP4324205B2 (ja)
KR (1) KR101045271B1 (ja)
TW (1) TWI400997B (ja)
WO (1) WO2008123411A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120000609A1 (en) * 2010-07-01 2012-01-05 Jusung Engineering Co., Ltd. Power supplying means having shielding means for feeding line and substrate processing apparatus including the same

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5278148B2 (ja) 2008-11-05 2013-09-04 東京エレクトロン株式会社 プラズマ処理装置
US8890410B2 (en) * 2009-09-17 2014-11-18 Imagineering, Inc. Plasma generation device
CN103250470A (zh) * 2010-12-09 2013-08-14 韩国科学技术院 等离子体发生器
KR101196309B1 (ko) 2011-05-19 2012-11-06 한국과학기술원 플라즈마 발생 장치
KR101241049B1 (ko) 2011-08-01 2013-03-15 주식회사 플라즈마트 플라즈마 발생 장치 및 플라즈마 발생 방법
US8776002B2 (en) * 2011-09-06 2014-07-08 Variable Z0, Ltd. Variable Z0 antenna device design system and method
KR101246191B1 (ko) 2011-10-13 2013-03-21 주식회사 윈텔 플라즈마 장치 및 기판 처리 장치
KR101504532B1 (ko) * 2012-03-09 2015-03-24 주식회사 윈텔 플라즈마 처리 방법 및 기판 처리 장치
KR101332337B1 (ko) 2012-06-29 2013-11-22 태원전기산업 (주) 초고주파 발광 램프 장치
KR101379701B1 (ko) * 2012-11-28 2014-04-01 한국표준과학연구원 기판 처리 장치 및 기판 처리 방법
CN103855459A (zh) * 2012-11-29 2014-06-11 细美事有限公司 等离子体天线以及具有该天线的用于产生等离子体的装置
KR20160016917A (ko) * 2013-05-31 2016-02-15 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 프로세싱 시스템들을 위한 안테나 어레이 구성들
JP2015022940A (ja) * 2013-07-19 2015-02-02 東京エレクトロン株式会社 プラズマ処理装置、異常発振判断方法及び高周波発生器
US10580623B2 (en) * 2013-11-19 2020-03-03 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity
KR102024185B1 (ko) * 2018-01-11 2019-09-23 (주)이큐글로벌 소스 매처
JP7061264B2 (ja) * 2018-03-20 2022-04-28 日新電機株式会社 プラズマ制御システム及びプラズマ制御システム用プログラム
JP7352068B2 (ja) * 2019-07-12 2023-09-28 日新電機株式会社 プラズマ制御システム
US20240420921A1 (en) * 2023-06-13 2024-12-19 Applied Materials, Inc. Immersed plasma source and process chamber for large area substrates

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08325759A (ja) * 1995-05-30 1996-12-10 Anelva Corp 表面処理装置
JP2004228354A (ja) * 2003-01-23 2004-08-12 Japan Science & Technology Agency プラズマ生成装置
JP2004311646A (ja) * 2003-04-04 2004-11-04 Asm Japan Kk プラズマ処理装置
JP2005057510A (ja) * 2003-08-05 2005-03-03 Kyosan Electric Mfg Co Ltd 高周波電力分配装置
JP2005285564A (ja) * 2004-03-30 2005-10-13 Mitsui Eng & Shipbuild Co Ltd プラズマ処理装置
JP2006202638A (ja) * 2005-01-21 2006-08-03 Mitsui Eng & Shipbuild Co Ltd プラズマ生成装置及びプラズマ生成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2579371B2 (ja) * 1989-10-20 1997-02-05 富士通株式会社 高周波信号用の電力分配／合成器
DE19628949B4 (de) * 1995-02-02 2008-12-04 Muegge Electronic Gmbh Vorrichtung zur Erzeugung von Plasma
US6075494A (en) * 1997-06-30 2000-06-13 Raytheon Company Compact, ultra-wideband, antenna feed architecture comprising a multistage, multilevel network of constant reflection-coefficient components
JP2961103B1 (ja) * 1998-04-28 1999-10-12 三菱重工業株式会社 プラズマ化学蒸着装置
US20030145790A1 (en) * 2002-02-05 2003-08-07 Hitoshi Sakamoto Metal film production apparatus and metal film production method
US20030168012A1 (en) * 2002-03-07 2003-09-11 Hitoshi Tamura Plasma processing device and plasma processing method
JP2004055600A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
TW201041455A (en) * 2002-12-16 2010-11-16 Japan Science & Tech Agency Plasma generation device, plasma control method, and substrate manufacturing method
KR100782876B1 (ko) * 2005-03-24 2007-12-06 한국기계연구원 저온용 플라즈마 발생 튜브 반응기

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08325759A (ja) * 1995-05-30 1996-12-10 Anelva Corp 表面処理装置
JP2004228354A (ja) * 2003-01-23 2004-08-12 Japan Science & Technology Agency プラズマ生成装置
JP2004311646A (ja) * 2003-04-04 2004-11-04 Asm Japan Kk プラズマ処理装置
JP2005057510A (ja) * 2003-08-05 2005-03-03 Kyosan Electric Mfg Co Ltd 高周波電力分配装置
JP2005285564A (ja) * 2004-03-30 2005-10-13 Mitsui Eng & Shipbuild Co Ltd プラズマ処理装置
JP2006202638A (ja) * 2005-01-21 2006-08-03 Mitsui Eng & Shipbuild Co Ltd プラズマ生成装置及びプラズマ生成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2139303A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120000609A1 (en) * 2010-07-01 2012-01-05 Jusung Engineering Co., Ltd. Power supplying means having shielding means for feeding line and substrate processing apparatus including the same
US9398732B2 (en) * 2010-07-01 2016-07-19 Jusung Engineering Co., Ltd. Power supplying means having shielding means for feeding line and substrate processing apparatus including the same

Also Published As

Publication number Publication date
JP2008251358A (ja) 2008-10-16
KR101045271B1 (ko) 2011-06-29
KR20090108730A (ko) 2009-10-16
TWI400997B (zh) 2013-07-01
JP4324205B2 (ja) 2009-09-02
EP2139303A4 (en) 2010-11-10
US20100095888A1 (en) 2010-04-22
TW200850082A (en) 2008-12-16
EP2139303A1 (en) 2009-12-30

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