WO2008142760A1 - 電力用半導体モジュール - Google Patents

電力用半導体モジュール Download PDF

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Publication number
WO2008142760A1
WO2008142760A1 PCT/JP2007/060252 JP2007060252W WO2008142760A1 WO 2008142760 A1 WO2008142760 A1 WO 2008142760A1 JP 2007060252 W JP2007060252 W JP 2007060252W WO 2008142760 A1 WO2008142760 A1 WO 2008142760A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
face
pattern
substratum
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/060252
Other languages
English (en)
French (fr)
Inventor
Osamu Soda
Yuji Ohnishi
Kazunori Inami
Toshio Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansha Electric Manufacturing Co Ltd
Original Assignee
Sansha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co Ltd filed Critical Sansha Electric Manufacturing Co Ltd
Priority to KR1020097014565A priority Critical patent/KR101064024B1/ko
Priority to JP2009515029A priority patent/JP5328645B2/ja
Priority to EP07743687.1A priority patent/EP2149903B1/en
Priority to PCT/JP2007/060252 priority patent/WO2008142760A1/ja
Priority to US12/451,157 priority patent/US7994635B2/en
Priority to CN2007800512169A priority patent/CN101675520B/zh
Publication of WO2008142760A1 publication Critical patent/WO2008142760A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Inverter Devices (AREA)

Abstract

　セラミック基板の反りを抑制し、かつ、放熱効率が低下するのを防止する。 　放熱器が取り付けられるモジュール筐体と、モジュール筐体によって保持される共通ユニットからなる。共通ユニットは、半導体素子が配設された回路面及び放熱器に当接する放熱面を有するセラミック基板と、放熱面を露出させるとともに回路面を耐熱性樹脂により封止して形成されるパッケージとを有する。回路面及び放熱面は、それぞれセラミック基板に形成された金属層５１からなり、放熱面を形成している金属層５１は、その周縁部に沿って延びる溝部からなる緩衝パターン５１２が形成されることにより、緩衝パターン５１２よりも内側に形成された放熱パターン５１０と、緩衝パターン５１２よりも外側に形成された外周パターン５１１とを有する。この様な構成により、セラミック基板の反りを抑制し、かつ、放熱効率が低下するのを防止することができる。
PCT/JP2007/060252 2007-05-18 2007-05-18 電力用半導体モジュール Ceased WO2008142760A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020097014565A KR101064024B1 (ko) 2007-05-18 2007-05-18 전력용 반도체모듈
JP2009515029A JP5328645B2 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール
EP07743687.1A EP2149903B1 (en) 2007-05-18 2007-05-18 Semiconductor module for electric power
PCT/JP2007/060252 WO2008142760A1 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール
US12/451,157 US7994635B2 (en) 2007-05-18 2007-05-18 Power semiconductor module
CN2007800512169A CN101675520B (zh) 2007-05-18 2007-05-18 电力用半导体模块

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/060252 WO2008142760A1 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール

Publications (1)

Publication Number Publication Date
WO2008142760A1 true WO2008142760A1 (ja) 2008-11-27

Family

ID=40031487

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/060252 Ceased WO2008142760A1 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール

Country Status (6)

Country Link
US (1) US7994635B2 (ja)
EP (1) EP2149903B1 (ja)
JP (1) JP5328645B2 (ja)
KR (1) KR101064024B1 (ja)
CN (1) CN101675520B (ja)
WO (1) WO2008142760A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013229369A (ja) * 2012-04-24 2013-11-07 Denso Corp モールドパッケージ
JP2016058563A (ja) * 2014-09-10 2016-04-21 三菱電機株式会社 半導体装置およびその製造方法
US9917031B2 (en) 2013-09-30 2018-03-13 Fuji Electric Co., Ltd. Semiconductor device, and method for assembling semiconductor device
CN113690192A (zh) * 2020-05-18 2021-11-23 英飞凌科技股份有限公司 功率半导体模块和用于制造功率半导体模块的方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5481104B2 (ja) * 2009-06-11 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置
JP5233854B2 (ja) 2009-06-12 2013-07-10 日本電産株式会社 軸受装置、スピンドルモータ、及びディスク駆動装置
JP5019082B1 (ja) * 2011-03-25 2012-09-05 栗田工業株式会社 液体加熱方法及び液体加熱装置並びに加熱液体供給装置
BR112013028804B1 (pt) * 2012-10-03 2020-11-17 Shindengen Electric Manufacturing Co., Ltd. dispositivo eletrônico
KR20150074649A (ko) * 2013-12-24 2015-07-02 삼성전기주식회사 반도체 패키지 및 그 제조 방법
JP6578795B2 (ja) * 2015-08-04 2019-09-25 富士電機株式会社 半導体装置及び半導体装置の製造方法
CN105811787A (zh) * 2016-05-18 2016-07-27 珠海格力电器股份有限公司 一种全密封换流组件
CN107369741A (zh) * 2017-07-13 2017-11-21 东莞市凯昶德电子科技股份有限公司 带一体式金属围坝的led支架模组及其制备方法
CN114175242B (zh) 2019-07-30 2025-06-27 株式会社三社电机制作所 半导体模块
JP7591377B2 (ja) * 2020-10-09 2024-11-28 株式会社三社電機製作所 半導体部品
DE112020007724T5 (de) * 2020-10-23 2023-08-10 Mitsubishi Electric Corporation Halbleitervorrichtung und Verfahren zur Fertigung der Halbleitervorrichtung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09237869A (ja) 1996-02-29 1997-09-09 Hitachi Ltd 樹脂封止型パワーモジュール装置及びその製造方法
JPH1084059A (ja) * 1996-09-09 1998-03-31 Toshiba Corp 窒化けい素回路基板
JP2001036005A (ja) * 1999-07-23 2001-02-09 Fuji Electric Co Ltd 半導体装置
JP2006140401A (ja) * 2004-11-15 2006-06-01 Toshiba Corp 半導体集積回路装置
JP2006332291A (ja) * 2005-05-25 2006-12-07 Keihin Corp パワードライブユニット

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3241508A1 (de) * 1982-11-10 1984-05-10 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungstransistor-modul
JPH0777246B2 (ja) * 1989-10-31 1995-08-16 株式会社住友金属セラミックス セラミックス回路基板
US5760333A (en) * 1992-08-06 1998-06-02 Pfu Limited Heat-generating element cooling device
JPH07161925A (ja) * 1993-12-09 1995-06-23 Mitsubishi Electric Corp パワーモジュール
JP3316714B2 (ja) * 1994-05-31 2002-08-19 三菱電機株式会社 半導体装置
JP3919398B2 (ja) * 1999-10-27 2007-05-23 三菱電機株式会社 半導体モジュール
JP2002344094A (ja) * 2001-05-15 2002-11-29 Dowa Mining Co Ltd パワーモジュール用回路基板
JP3910383B2 (ja) 2001-07-17 2007-04-25 株式会社日立製作所 パワーモジュールおよびインバータ
JP2005064291A (ja) * 2003-08-14 2005-03-10 Nissan Motor Co Ltd 絶縁シートおよびこの絶縁シートを用いた半導体装置組立体
JP4821537B2 (ja) * 2006-09-26 2011-11-24 株式会社デンソー 電子制御装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09237869A (ja) 1996-02-29 1997-09-09 Hitachi Ltd 樹脂封止型パワーモジュール装置及びその製造方法
JPH1084059A (ja) * 1996-09-09 1998-03-31 Toshiba Corp 窒化けい素回路基板
JP2001036005A (ja) * 1999-07-23 2001-02-09 Fuji Electric Co Ltd 半導体装置
JP2006140401A (ja) * 2004-11-15 2006-06-01 Toshiba Corp 半導体集積回路装置
JP2006332291A (ja) * 2005-05-25 2006-12-07 Keihin Corp パワードライブユニット

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2149903A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013229369A (ja) * 2012-04-24 2013-11-07 Denso Corp モールドパッケージ
US9917031B2 (en) 2013-09-30 2018-03-13 Fuji Electric Co., Ltd. Semiconductor device, and method for assembling semiconductor device
JP2016058563A (ja) * 2014-09-10 2016-04-21 三菱電機株式会社 半導体装置およびその製造方法
CN113690192A (zh) * 2020-05-18 2021-11-23 英飞凌科技股份有限公司 功率半导体模块和用于制造功率半导体模块的方法

Also Published As

Publication number Publication date
CN101675520A (zh) 2010-03-17
CN101675520B (zh) 2011-07-20
US7994635B2 (en) 2011-08-09
EP2149903A4 (en) 2011-11-09
EP2149903B1 (en) 2019-10-30
JPWO2008142760A1 (ja) 2010-08-05
KR101064024B1 (ko) 2011-09-08
US20100127387A1 (en) 2010-05-27
KR20090089468A (ko) 2009-08-21
JP5328645B2 (ja) 2013-10-30
EP2149903A1 (en) 2010-02-03

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