WO2008152988A1 - 半導体発光素子およびその製造方法 - Google Patents

半導体発光素子およびその製造方法 Download PDF

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Publication number
WO2008152988A1
WO2008152988A1 PCT/JP2008/060476 JP2008060476W WO2008152988A1 WO 2008152988 A1 WO2008152988 A1 WO 2008152988A1 JP 2008060476 W JP2008060476 W JP 2008060476W WO 2008152988 A1 WO2008152988 A1 WO 2008152988A1
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WO
WIPO (PCT)
Prior art keywords
layer
light emitting
metal
emitting element
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060476
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English (en)
French (fr)
Inventor
Masakazu Takao
Mitsuhiko Sakai
Shunji Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/452,027 priority Critical patent/US8039864B2/en
Priority to EP08765289.7A priority patent/EP2157623B1/en
Priority to CN2008800199380A priority patent/CN101681970B/zh
Publication of WO2008152988A1 publication Critical patent/WO2008152988A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

Landscapes

  • Led Devices (AREA)

Abstract

　不透明な半導体基板を用いて、金属反射層を形成して高輝度の半導体発光素子およびその製造方法を提供する。 　ＧａＡｓ層（３）と、ＧａＡｓ層の表面に配置された第１金属バッファ層（２）と、第１金属バッファ層上に配置された第１金属層（１）と、ＧａＡｓ層の裏面に配置された第２金属バッファ層（４）と第２金属層（５）とを備えるＧａＡｓ基板構造と、ＧａＡｓ基板構造上に配置され、第３金属層（１２）と、第３金属層上に配置される金属コンタクト層（１１）と、金属コンタクト層上に配置されるｐ型クラッド層（１０）と、ｐ型クラッド層に配置される多重量子井戸層（９）と、多重量子井戸層上に配置されるｎ型クラッド層（８）と、ｎ型クラッド層上に配置されるウィンドウ層（７）を備える発光ダイオード構造とから構成され、第１金属層（１）および第３金属層（１２）を用いて、ＧａＡｓ基板構造と、発光ダイオード構造を貼り付ける。
PCT/JP2008/060476 2007-06-13 2008-06-06 半導体発光素子およびその製造方法 Ceased WO2008152988A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/452,027 US8039864B2 (en) 2007-06-13 2008-06-06 Semiconductor light emitting device and fabrication method for the same
EP08765289.7A EP2157623B1 (en) 2007-06-13 2008-06-06 Semiconductor light emitting element and method for manufacturing the same
CN2008800199380A CN101681970B (zh) 2007-06-13 2008-06-06 半导体发光元件及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-156381 2007-06-13
JP2007156381A JP5123573B2 (ja) 2007-06-13 2007-06-13 半導体発光素子およびその製造方法

Publications (1)

Publication Number Publication Date
WO2008152988A1 true WO2008152988A1 (ja) 2008-12-18

Family

ID=40129593

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060476 Ceased WO2008152988A1 (ja) 2007-06-13 2008-06-06 半導体発光素子およびその製造方法

Country Status (6)

Country Link
US (1) US8039864B2 (ja)
EP (1) EP2157623B1 (ja)
JP (1) JP5123573B2 (ja)
KR (1) KR101473038B1 (ja)
CN (1) CN101681970B (ja)
WO (1) WO2008152988A1 (ja)

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* Cited by examiner, † Cited by third party
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US20110089452A1 (en) * 2009-10-15 2011-04-21 Hwan Hee Jeong Semiconductor light-emitting device and method for fabricating the same
US8421105B2 (en) 2009-10-15 2013-04-16 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
CN101840966B (zh) * 2009-05-08 2013-07-03 晶能光电（江西）有限公司 半导体发光器件以及制备发光二极管的方法
JP2014086574A (ja) * 2012-10-24 2014-05-12 Stanley Electric Co Ltd 発光素子
US8772803B2 (en) 2009-10-15 2014-07-08 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same

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KR100599012B1 (ko) * 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
JP5346443B2 (ja) 2007-04-16 2013-11-20 ローム株式会社 半導体発光素子およびその製造方法
US8299455B2 (en) * 2007-10-15 2012-10-30 International Business Machines Corporation Semiconductor structures having improved contact resistance
JP5651288B2 (ja) * 2008-03-25 2015-01-07 株式会社東芝 半導体発光素子及びその製造方法
JP2010067890A (ja) * 2008-09-12 2010-03-25 Hitachi Cable Ltd 発光素子
JP2010251531A (ja) * 2009-04-16 2010-11-04 Rohm Co Ltd 半導体発光素子
KR101728545B1 (ko) * 2010-04-23 2017-04-19 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
CN102376830B (zh) * 2010-08-19 2015-07-08 展晶科技(深圳)有限公司 发光二极管及其制造方法
KR101138951B1 (ko) * 2010-08-23 2012-04-25 서울옵토디바이스주식회사 발광다이오드
US8154034B1 (en) 2010-11-23 2012-04-10 Invenlux Limited Method for fabricating vertical light emitting devices and substrate assembly for the same
TWI419367B (zh) * 2010-12-02 2013-12-11 Epistar Corp 光電元件及其製造方法
TWI546979B (zh) * 2012-03-05 2016-08-21 晶元光電股份有限公司 對位接合之發光二極體裝置與其製造方法
KR20140018534A (ko) * 2012-08-02 2014-02-13 엘지이노텍 주식회사 발광 소자
TWI563686B (en) * 2012-12-21 2016-12-21 Hon Hai Prec Ind Co Ltd Led chip and method manufacturing the same
TWI644451B (zh) * 2013-07-10 2018-12-11 晶元光電股份有限公司 發光元件
CN103594579B (zh) * 2013-11-06 2016-04-13 南昌黄绿照明有限公司 一种氮化物发光二极管的外延结构
DE102014108301B4 (de) * 2014-06-12 2026-04-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
KR20160037060A (ko) 2014-09-26 2016-04-05 서울바이오시스 주식회사 발광소자 및 그 제조 방법
US9773906B2 (en) * 2015-04-28 2017-09-26 Samsung Electronics Co., Ltd. Relaxed semiconductor layers with reduced defects and methods of forming the same
KR102336432B1 (ko) * 2015-09-01 2021-12-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 발광소자 패키지
KR102573271B1 (ko) * 2018-04-27 2023-08-31 삼성전자주식회사 반도체 발광소자
KR102845984B1 (ko) * 2021-02-03 2025-08-12 삼성전자주식회사 발광 소자 및 이의 제조 방법
US20230106189A1 (en) * 2021-10-01 2023-04-06 Lawrence Livermore National Security, Llc Patterning of diode/substrate interface to reduce thermal lensing
CN115458647B (zh) * 2022-10-31 2025-08-19 天津三安光电有限公司 一种垂直led芯片结构及其制造方法及发光装置
CN116364825A (zh) * 2023-06-01 2023-06-30 江西兆驰半导体有限公司 复合缓冲层及其制备方法、外延片及发光二极管
CN119108471B (zh) * 2024-11-08 2025-06-27 南昌凯迅光电股份有限公司 一种红光led芯片及其制作方法
CN120730896B (zh) * 2025-08-28 2025-11-07 南昌大学 一种改善散热与缓释应力的led芯片及其制备方法

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101840966B (zh) * 2009-05-08 2013-07-03 晶能光电（江西）有限公司 半导体发光器件以及制备发光二极管的方法
US20110089452A1 (en) * 2009-10-15 2011-04-21 Hwan Hee Jeong Semiconductor light-emitting device and method for fabricating the same
US8421105B2 (en) 2009-10-15 2013-04-16 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US8513679B2 (en) * 2009-10-15 2013-08-20 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US8772803B2 (en) 2009-10-15 2014-07-08 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US9117971B2 (en) 2009-10-15 2015-08-25 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US9935245B2 (en) 2009-10-15 2018-04-03 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US10636944B2 (en) 2009-10-15 2020-04-28 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
JP2014086574A (ja) * 2012-10-24 2014-05-12 Stanley Electric Co Ltd 発光素子

Also Published As

Publication number Publication date
EP2157623A4 (en) 2013-12-25
JP2008311352A (ja) 2008-12-25
KR101473038B1 (ko) 2014-12-15
KR20100020515A (ko) 2010-02-22
EP2157623B1 (en) 2017-01-18
US8039864B2 (en) 2011-10-18
US20100133505A1 (en) 2010-06-03
CN101681970B (zh) 2011-08-24
JP5123573B2 (ja) 2013-01-23
EP2157623A1 (en) 2010-02-24
CN101681970A (zh) 2010-03-24

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