WO2008156054A1 - 研磨用組成物および半導体集積回路装置の製造方法 - Google Patents

研磨用組成物および半導体集積回路装置の製造方法 Download PDF

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Publication number
WO2008156054A1
WO2008156054A1 PCT/JP2008/060975 JP2008060975W WO2008156054A1 WO 2008156054 A1 WO2008156054 A1 WO 2008156054A1 JP 2008060975 W JP2008060975 W JP 2008060975W WO 2008156054 A1 WO2008156054 A1 WO 2008156054A1
Authority
WO
WIPO (PCT)
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
polishing
disclosed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060975
Other languages
English (en)
French (fr)
Inventor
Satoshi Takemiya
Iori Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to CN200880021284A priority Critical patent/CN101689493A/zh
Priority to EP08765658A priority patent/EP2161737A4/en
Priority to JP2009520474A priority patent/JPWO2008156054A1/ja
Publication of WO2008156054A1 publication Critical patent/WO2008156054A1/ja
Anticipated expiration legal-status Critical
Priority to US12/644,137 priority patent/US20100099259A1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　半導体集積回路装置の製造における被研磨面の研磨において、埋込み金属配線を有する絶縁層の平坦な表面を得ることができる。また、高平坦化された多層構造を持つ半導体集積回路装置を得ることができる。半導体集積回路装置の被研磨面を研磨するための化学的機械的研磨用組成物であって、過酸化水素、過硫酸アンモニウムおよび過硫酸カリウムからなる群から選ばれる１種以上である酸化剤と、砥粒と、脂環族樹脂酸と、塩基性化合物と、無機酸とを含有し、ｐＨが８～１２の範囲である、研磨用組成物を提供する。
PCT/JP2008/060975 2007-06-20 2008-06-16 研磨用組成物および半導体集積回路装置の製造方法 Ceased WO2008156054A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880021284A CN101689493A (zh) 2007-06-20 2008-06-16 研磨用组合物及半导体集成电路装置的制造方法
EP08765658A EP2161737A4 (en) 2007-06-20 2008-06-16 POLISHING COMPOSITION AND METHOD FOR MANUFACTURING INTEGRATED SEMICONDUCTOR ELEMENT COMPONENTS
JP2009520474A JPWO2008156054A1 (ja) 2007-06-20 2008-06-16 研磨用組成物および半導体集積回路装置の製造方法
US12/644,137 US20100099259A1 (en) 2007-06-20 2009-12-22 Polishing composition and method for manufacturing semiconductor integrated circuit device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007162768 2007-06-20
JP2007-162768 2007-06-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/644,137 Continuation US20100099259A1 (en) 2007-06-20 2009-12-22 Polishing composition and method for manufacturing semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
WO2008156054A1 true WO2008156054A1 (ja) 2008-12-24

Family

ID=40156213

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060975 Ceased WO2008156054A1 (ja) 2007-06-20 2008-06-16 研磨用組成物および半導体集積回路装置の製造方法

Country Status (7)

Country Link
US (1) US20100099259A1 (ja)
EP (1) EP2161737A4 (ja)
JP (1) JPWO2008156054A1 (ja)
KR (1) KR20100020975A (ja)
CN (1) CN101689493A (ja)
TW (1) TW200908130A (ja)
WO (1) WO2008156054A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012165016A1 (ja) * 2011-06-01 2012-12-06 日立化成工業株式会社 Ｃｍｐ研磨液及び半導体基板の研磨方法
JP2018145261A (ja) * 2017-03-02 2018-09-20 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨用組成物の製造方法
JP2022099608A (ja) * 2020-12-23 2022-07-05 ニッタ・デュポン株式会社 研磨用組成物及び研磨用組成物製造用キット

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* Cited by examiner, † Cited by third party
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US8432548B2 (en) * 2008-11-04 2013-04-30 Molecular Imprints, Inc. Alignment for edge field nano-imprinting
JP5533664B2 (ja) * 2008-11-10 2014-06-25 旭硝子株式会社 研磨用組成物および半導体集積回路装置の製造方法
KR20120136881A (ko) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
TWI547552B (zh) * 2012-03-19 2016-09-01 福吉米股份有限公司 硏光加工用硏磨材及使用此之基板的製造方法
CN102877079B (zh) * 2012-10-26 2014-09-10 陈守文 适用于石油工业管线与设备中的硫化亚铁的去除方法
JP6775453B2 (ja) * 2017-03-23 2020-10-28 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
US11993729B2 (en) * 2017-11-22 2024-05-28 Basf Se Chemical mechanical polishing composition
CN115820127B (zh) * 2022-11-07 2024-12-06 上海交通大学 一种适用于铜钴互连结构的化学机械抛光液及其制备方法
WO2025136046A1 (ko) * 2023-12-19 2025-06-26 솔브레인 주식회사 하이브리드 본딩의 구조 평탄화 방법 및 하이브리드 본딩의 구조 평탄화 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001064631A (ja) * 1999-06-23 2001-03-13 Jsr Corp 研磨用組成物および研磨方法
JP2001077062A (ja) 1999-09-06 2001-03-23 Jsr Corp 半導体装置の製造に用いる化学機械研磨用水系分散体
JP2003036705A (ja) 2001-07-25 2003-02-07 Toshiba Lighting & Technology Corp 照明装置
JP2005277248A (ja) * 2004-03-26 2005-10-06 Asahi Kasei Chemicals Corp 半導体ウエハ研磨方法
JP2007012679A (ja) * 2005-06-28 2007-01-18 Asahi Glass Co Ltd 研磨剤および半導体集積回路装置の製造方法

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US5277708A (en) * 1993-01-19 1994-01-11 S&S Industrial Services, Inc. Buffing composition
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6893959B2 (en) * 2003-05-05 2005-05-17 Infineon Technologies Ag Method to form selective cap layers on metal features with narrow spaces
JP2005340755A (ja) * 2003-11-14 2005-12-08 Showa Denko Kk 研磨組成物および研磨方法
DE602006002900D1 (de) * 2005-03-09 2008-11-13 Jsr Corp Wässrige Dispersion zum chemisch-mechanischen Polieren, Kit zu deren Herstellung und chemisch-mechanisches Polierverfahren
JP2006287002A (ja) * 2005-04-01 2006-10-19 Jsr Corp 化学機械研磨用水系分散体及び化学機械研磨方法
JP4277930B2 (ja) * 2005-12-21 2009-06-10 旭硝子株式会社 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001064631A (ja) * 1999-06-23 2001-03-13 Jsr Corp 研磨用組成物および研磨方法
JP2001077062A (ja) 1999-09-06 2001-03-23 Jsr Corp 半導体装置の製造に用いる化学機械研磨用水系分散体
JP2003036705A (ja) 2001-07-25 2003-02-07 Toshiba Lighting & Technology Corp 照明装置
JP2005277248A (ja) * 2004-03-26 2005-10-06 Asahi Kasei Chemicals Corp 半導体ウエハ研磨方法
JP2007012679A (ja) * 2005-06-28 2007-01-18 Asahi Glass Co Ltd 研磨剤および半導体集積回路装置の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2161737A4

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012165016A1 (ja) * 2011-06-01 2012-12-06 日立化成工業株式会社 Ｃｍｐ研磨液及び半導体基板の研磨方法
JPWO2012165016A1 (ja) * 2011-06-01 2015-02-23 日立化成株式会社 Ｃｍｐ研磨液及び半導体基板の研磨方法
JP2018145261A (ja) * 2017-03-02 2018-09-20 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨用組成物の製造方法
JP2022099608A (ja) * 2020-12-23 2022-07-05 ニッタ・デュポン株式会社 研磨用組成物及び研磨用組成物製造用キット
JP7692694B2 (ja) 2020-12-23 2025-06-16 ニッタ・デュポン株式会社 研磨用組成物及び研磨用組成物製造用キット

Also Published As

Publication number Publication date
EP2161737A4 (en) 2010-06-23
KR20100020975A (ko) 2010-02-23
US20100099259A1 (en) 2010-04-22
CN101689493A (zh) 2010-03-31
TW200908130A (en) 2009-02-16
JPWO2008156054A1 (ja) 2010-08-26
EP2161737A1 (en) 2010-03-10

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