WO2009013914A1 - ＳｉＣエピタキシャル基板およびその製造方法 - Google Patents

ＳｉＣエピタキシャル基板およびその製造方法 Download PDF

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WO2009013914A1
WO2009013914A1 PCT/JP2008/054333 JP2008054333W WO2009013914A1 WO 2009013914 A1 WO2009013914 A1 WO 2009013914A1 JP 2008054333 W JP2008054333 W JP 2008054333W WO 2009013914 A1 WO2009013914 A1 WO 2009013914A1
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crystal sic
substrate
buffer layer
sic epitaxial
epitaxial
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French (fr)
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Nobuhiko Nakamura
Toru Matsunami
Kimito Nishikawa
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Ecotron Co Ltd
Research Institute of Innovative Technology for the Earth
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Ecotron Co Ltd
Research Institute of Innovative Technology for the Earth
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Priority to EP08721749A priority Critical patent/EP2196565B1/en
Priority to US12/452,084 priority patent/US8585821B2/en
Priority to JP2009524405A priority patent/JP5130468B2/ja
Publication of WO2009013914A1 publication Critical patent/WO2009013914A1/ja
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
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    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
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  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

　単結晶ＳｉＣ基板（１１）と、単結晶ＳｉＣ基板（１１）上に形成された第１のＳｉＣエピタキシャル膜からなるバッファ層（１２）と、バッファ層（１２）上に形成された第２のＳｉＣエピタキシャル膜からなる活性層（１３）とを備えてなる単結晶ＳｉＣエピタキシャル基板を製造する。バッファ層（１２）は、単結晶ＳｉＣ基板（１１）と炭素原料供給板との間に所定の厚さの金属Ｓｉ融液層を介在させた状態で熱処理を行うことによって単結晶ＳｉＣ基板（１１）上に単結晶ＳｉＣをエピタキシャル成長させて生成し、活性層（１３）はバッファ層（１２）上に気相成長法によって単結晶ＳｉＣをエピタキシャル成長させて生成する。これにより、欠陥が少ない高品質な単結晶ＳｉＣ活性層を有する単結晶ＳｉＣエピタキシャル基板を製造できる。
PCT/JP2008/054333 2007-07-26 2008-03-11 ＳｉＣエピタキシャル基板およびその製造方法 Ceased WO2009013914A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08721749A EP2196565B1 (en) 2007-07-26 2008-03-11 Method for producing sic epitaxial substrate
US12/452,084 US8585821B2 (en) 2007-07-26 2008-03-11 SiC epitaxial substrate and method for producing the same
JP2009524405A JP5130468B2 (ja) 2007-07-26 2008-03-11 ＳｉＣエピタキシャル基板の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-195061 2007-07-26
JP2007195061 2007-07-26

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WO2009013914A1 true WO2009013914A1 (ja) 2009-01-29

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US (1) US8585821B2 (ja)
EP (2) EP2385159B1 (ja)
JP (1) JP5130468B2 (ja)
WO (1) WO2009013914A1 (ja)

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WO2010101016A1 (ja) * 2009-03-05 2010-09-10 三菱電機株式会社 炭化珪素半導体装置の製造方法
WO2011135669A1 (ja) * 2010-04-27 2011-11-03 株式会社エコトロン ＳｉＣ基板の作製方法
WO2013150587A1 (ja) * 2012-04-02 2013-10-10 株式会社エコトロン 単結晶ＳｉＣエピタキシャル基板の製造方法および単結晶ＳｉＣエピタキシャル基板
WO2014020694A1 (ja) * 2012-07-31 2014-02-06 株式会社エコトロン 単結晶炭化珪素基板およびその作製方法
JP2015086122A (ja) * 2013-11-01 2015-05-07 株式会社豊田自動織機 化合物半導体結晶の製造方法
WO2015170500A1 (ja) * 2014-05-08 2015-11-12 三菱電機株式会社 ＳｉＣエピタキシャルウエハおよび炭化珪素半導体装置の製造方法
JP2018082053A (ja) * 2016-11-16 2018-05-24 富士電機株式会社 炭化珪素半導体素子および炭化珪素半導体素子の製造方法
KR20190096191A (ko) * 2018-02-08 2019-08-19 엘지이노텍 주식회사 반도체 소자

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TWI508327B (zh) * 2010-03-05 2015-11-11 並木精密寶石股份有限公司 An internal modified substrate for epitaxial growth, a multilayer film internal modified substrate, a semiconductor device, a semiconductor bulk substrate, and the like
GB2484506A (en) * 2010-10-13 2012-04-18 Univ Warwick Heterogrowth
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
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JP2014203833A (ja) * 2013-04-01 2014-10-27 住友電気工業株式会社 炭化珪素半導体装置の製造方法
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JP6289952B2 (ja) * 2014-03-19 2018-03-07 株式会社東芝 ＳｉＣエピタキシャル基板の製造方法、半導体装置の製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP2016127177A (ja) * 2015-01-06 2016-07-11 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法
JP6621304B2 (ja) * 2015-11-10 2019-12-18 学校法人関西学院 半導体ウエハの製造方法
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CN116682846A (zh) * 2022-02-22 2023-09-01 南京百识电子科技有限公司 一种碳化硅外延层的缺陷阻障结构及方法
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DE112010000953B4 (de) * 2009-03-05 2017-08-24 Mitsubishi Electric Corporation Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung
CN102341893B (zh) * 2009-03-05 2015-03-25 三菱电机株式会社 碳化硅半导体装置的制造方法
CN102341893A (zh) * 2009-03-05 2012-02-01 三菱电机株式会社 碳化硅半导体装置的制造方法
WO2010101016A1 (ja) * 2009-03-05 2010-09-10 三菱電機株式会社 炭化珪素半導体装置の製造方法
US8569106B2 (en) 2009-03-05 2013-10-29 Mitsubishi Electric Corporation Method for manufacturing silicon carbide semiconductor device
JP5393772B2 (ja) * 2009-03-05 2014-01-22 三菱電機株式会社 炭化珪素半導体装置の製造方法
WO2011135669A1 (ja) * 2010-04-27 2011-11-03 株式会社エコトロン ＳｉＣ基板の作製方法
JPWO2013150587A1 (ja) * 2012-04-02 2015-12-14 日新電機株式会社 単結晶ＳｉＣエピタキシャル基板の製造方法および単結晶ＳｉＣエピタキシャル基板
WO2013150587A1 (ja) * 2012-04-02 2013-10-10 株式会社エコトロン 単結晶ＳｉＣエピタキシャル基板の製造方法および単結晶ＳｉＣエピタキシャル基板
WO2014020694A1 (ja) * 2012-07-31 2014-02-06 株式会社エコトロン 単結晶炭化珪素基板およびその作製方法
JP2015086122A (ja) * 2013-11-01 2015-05-07 株式会社豊田自動織機 化合物半導体結晶の製造方法
WO2015170500A1 (ja) * 2014-05-08 2015-11-12 三菱電機株式会社 ＳｉＣエピタキシャルウエハおよび炭化珪素半導体装置の製造方法
JPWO2015170500A1 (ja) * 2014-05-08 2017-04-20 三菱電機株式会社 ＳｉＣエピタキシャルウエハおよび炭化珪素半導体装置の製造方法
JP2018082053A (ja) * 2016-11-16 2018-05-24 富士電機株式会社 炭化珪素半導体素子および炭化珪素半導体素子の製造方法
KR20190096191A (ko) * 2018-02-08 2019-08-19 엘지이노텍 주식회사 반도체 소자
KR102429114B1 (ko) 2018-02-08 2022-08-04 주식회사 엘엑스세미콘 반도체 소자

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