WO2009013918A1 - 熱電素子、熱電モジュール及び熱電素子の製造方法 - Google Patents

熱電素子、熱電モジュール及び熱電素子の製造方法 Download PDF

Info

Publication number
WO2009013918A1
WO2009013918A1 PCT/JP2008/056329 JP2008056329W WO2009013918A1 WO 2009013918 A1 WO2009013918 A1 WO 2009013918A1 JP 2008056329 W JP2008056329 W JP 2008056329W WO 2009013918 A1 WO2009013918 A1 WO 2009013918A1
Authority
WO
WIPO (PCT)
Prior art keywords
thermoelectric
thermoelectric element
area
module
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/056329
Other languages
English (en)
French (fr)
Inventor
Kazuyuki Fujie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2009524409A priority Critical patent/JP4828635B2/ja
Priority to US12/670,102 priority patent/US20100252086A1/en
Priority to CN2008800255395A priority patent/CN101779304B/zh
Priority to EP08739443.3A priority patent/EP2182558B1/en
Publication of WO2009013918A1 publication Critical patent/WO2009013918A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

　両端の温度差の大きくでき、熱電特性の高い熱電素子及び熱電モジュールを提供する。 　その熱電素子は、一端面と他端面とを備えた柱状の熱電素子であって、熱電素子は、中心軸を含む第１の部位と、第１の部位の外側に位置し、かつ中心軸に向かって突出する凸部を有する第２の部位とを有し、第１の部位と第２の部位とは熱伝導率が異なる。
PCT/JP2008/056329 2007-07-25 2008-03-31 熱電素子、熱電モジュール及び熱電素子の製造方法 Ceased WO2009013918A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009524409A JP4828635B2 (ja) 2007-07-25 2008-03-31 熱電素子、熱電モジュール及び熱電素子の製造方法
US12/670,102 US20100252086A1 (en) 2007-07-25 2008-03-31 Thermoelectric Element, Thermoelectric Module, and Method for Manufacturing Thermoelectric Element
CN2008800255395A CN101779304B (zh) 2007-07-25 2008-03-31 热电元件、热电模块以及热电元件的制造方法
EP08739443.3A EP2182558B1 (en) 2007-07-25 2008-03-31 Thermoelectric element, thermoelectric module, and method for manufacturing thermoelectric element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-193214 2007-07-25
JP2007193214 2007-07-25

Publications (1)

Publication Number Publication Date
WO2009013918A1 true WO2009013918A1 (ja) 2009-01-29

Family

ID=40281178

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056329 Ceased WO2009013918A1 (ja) 2007-07-25 2008-03-31 熱電素子、熱電モジュール及び熱電素子の製造方法

Country Status (5)

Country Link
US (1) US20100252086A1 (ja)
EP (1) EP2182558B1 (ja)
JP (1) JP4828635B2 (ja)
CN (1) CN101779304B (ja)
WO (1) WO2009013918A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011096835A (ja) * 2009-10-29 2011-05-12 Swcc Showa Cable Systems Co Ltd 熱電変換モジュール
JP2012227447A (ja) * 2011-04-21 2012-11-15 National Institute Of Advanced Industrial & Technology 熱電変換材料およびその製造方法
JP2013065585A (ja) * 2011-09-15 2013-04-11 Swcc Showa Cable Systems Co Ltd 熱電変換素子
JP2014239160A (ja) * 2013-06-07 2014-12-18 パナソニック株式会社 熱電変換素子及び熱電変換モジュール
US8940995B2 (en) 2009-07-06 2015-01-27 Electronics And Telecommunications Research Institute Thermoelectric device and method for fabricating the same
JP2015018986A (ja) * 2013-07-12 2015-01-29 ヤマハ株式会社 熱電変換モジュール
JP2015222757A (ja) * 2014-05-22 2015-12-10 パナソニックＩｐマネジメント株式会社 熱電変換モジュール
JP2016006827A (ja) * 2014-06-20 2016-01-14 パナソニックＩｐマネジメント株式会社 熱電変換素子
JP2016174117A (ja) * 2015-03-18 2016-09-29 ヤマハ株式会社 熱電変換モジュール及びその製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9082928B2 (en) 2010-12-09 2015-07-14 Brian Isaac Ashkenazi Next generation thermoelectric device designs and methods of using same
JP5608545B2 (ja) * 2010-12-24 2014-10-15 デクセリアルズ株式会社 熱圧着ヘッド、実装装置及び実装方法
EP2707884A2 (en) * 2011-05-09 2014-03-19 Sheetak, Inc. Improved thermoelectric energy converters with reduced interface interface losses and manufacturing method thereof
KR101948888B1 (ko) * 2011-12-02 2019-04-25 한국전자통신연구원 열전 소자
GB201215342D0 (en) * 2012-08-29 2012-10-10 Ibm Thermoelectric elementd
CN102881806B (zh) * 2012-08-30 2015-07-01 深圳市晶荣泰科技有限公司 一种smd led单元及其封装方法
US10672968B2 (en) * 2015-07-21 2020-06-02 Analog Devices Global Thermoelectric devices
FR3040239B1 (fr) * 2015-08-21 2018-08-03 Universite De Lorraine Element thermoelectrique ameliore et convertisseur thermoelectrique comportant un tel element.
CN105823569B (zh) * 2016-04-27 2018-10-30 西安交通大学 一种掺杂铬酸镧薄膜型热电偶及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338650U (ja) * 1989-08-23 1991-04-15
JPH09181360A (ja) * 1995-12-26 1997-07-11 Matsushita Electric Works Ltd 熱電気変換装置
JPH1032355A (ja) * 1996-07-16 1998-02-03 Honda Motor Co Ltd 熱電材料
JPH11317547A (ja) * 1998-03-05 1999-11-16 Agency Of Ind Science & Technol 熱電変換材料及びその製造方法
JP2003347608A (ja) * 2002-05-28 2003-12-05 Kyocera Corp 熱電素子用結晶体及びその製造方法並びに熱電素子の製造方法
JP2006253341A (ja) * 2005-03-10 2006-09-21 National Institute Of Advanced Industrial & Technology 温度差がつきやすい熱電発電素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318743A (en) * 1992-11-27 1994-06-07 Idemitsu Petrochemical Co., Ltd. Processes for producing a thermoelectric material and a thermoelectric element
JPH104217A (ja) * 1996-06-17 1998-01-06 Matsushita Electric Works Ltd ペルチェ素子
JP2002094131A (ja) * 2000-09-13 2002-03-29 Sumitomo Special Metals Co Ltd 熱電変換素子
US7465871B2 (en) * 2004-10-29 2008-12-16 Massachusetts Institute Of Technology Nanocomposites with high thermoelectric figures of merit
JP2006294935A (ja) * 2005-04-12 2006-10-26 Kiyoshi Inaizumi 高能率低損失熱電モジュール
US7825324B2 (en) * 2006-12-29 2010-11-02 Alcatel-Lucent Usa Inc. Spreading thermoelectric coolers

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338650U (ja) * 1989-08-23 1991-04-15
JPH09181360A (ja) * 1995-12-26 1997-07-11 Matsushita Electric Works Ltd 熱電気変換装置
JPH1032355A (ja) * 1996-07-16 1998-02-03 Honda Motor Co Ltd 熱電材料
JPH11317547A (ja) * 1998-03-05 1999-11-16 Agency Of Ind Science & Technol 熱電変換材料及びその製造方法
JP2003347608A (ja) * 2002-05-28 2003-12-05 Kyocera Corp 熱電素子用結晶体及びその製造方法並びに熱電素子の製造方法
JP2006253341A (ja) * 2005-03-10 2006-09-21 National Institute Of Advanced Industrial & Technology 温度差がつきやすい熱電発電素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2182558A4 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8940995B2 (en) 2009-07-06 2015-01-27 Electronics And Telecommunications Research Institute Thermoelectric device and method for fabricating the same
JP2011096835A (ja) * 2009-10-29 2011-05-12 Swcc Showa Cable Systems Co Ltd 熱電変換モジュール
JP2012227447A (ja) * 2011-04-21 2012-11-15 National Institute Of Advanced Industrial & Technology 熱電変換材料およびその製造方法
JP2013065585A (ja) * 2011-09-15 2013-04-11 Swcc Showa Cable Systems Co Ltd 熱電変換素子
JP2014239160A (ja) * 2013-06-07 2014-12-18 パナソニック株式会社 熱電変換素子及び熱電変換モジュール
JP2015018986A (ja) * 2013-07-12 2015-01-29 ヤマハ株式会社 熱電変換モジュール
JP2015222757A (ja) * 2014-05-22 2015-12-10 パナソニックＩｐマネジメント株式会社 熱電変換モジュール
JP2016006827A (ja) * 2014-06-20 2016-01-14 パナソニックＩｐマネジメント株式会社 熱電変換素子
JP2016174117A (ja) * 2015-03-18 2016-09-29 ヤマハ株式会社 熱電変換モジュール及びその製造方法

Also Published As

Publication number Publication date
EP2182558A4 (en) 2013-01-02
JPWO2009013918A1 (ja) 2010-09-30
CN101779304B (zh) 2011-11-23
EP2182558A1 (en) 2010-05-05
CN101779304A (zh) 2010-07-14
EP2182558B1 (en) 2014-05-21
US20100252086A1 (en) 2010-10-07
JP4828635B2 (ja) 2011-11-30

Similar Documents

Publication Publication Date Title
WO2009013918A1 (ja) 熱電素子、熱電モジュール及び熱電素子の製造方法
USD693009S1 (en) Non-pneumatic tourniquet device
WO2010034907A8 (fr) Element magnetocalorique
WO2006110858A3 (en) Methods of forming thermoelectric devices including superlattice structures and related devices
IL204997A (en) Tiny chip obtained by creating low temperature ceramic layers, methods for obtaining and using the chip
TWI318004B (en) Thin film fuse phase change cell with thermal isolation pad and manufacturing method
USD674115S1 (en) Permeable paver block
WO2007103249A3 (en) Methods of forming thermoelectric devices using islands of thermoelectric material and related structures
USD693482S1 (en) Permeable paver block
WO2009085423A3 (en) A heat sink and method of forming a heatsink using a wedge-lock system
WO2008013946A3 (en) High capacity thermoelectric temperature control systems
EP2816588A3 (en) Diamond semiconductor element and process for producing the same
WO2009120152A8 (en) Variable optical systems and components
WO2010015310A3 (de) Solarzelle und verfahren zur herstellung einer solarzelle
WO2012101402A3 (en) Composite bow centralizer
WO2010139342A8 (en) Lens and method for manufacturing same
WO2010117705A3 (en) Dual-layer thermally tuned optical device
WO2008114653A1 (ja) 熱電変換モジュールの製造方法及び熱電変換モジュール
WO2008117533A1 (ja) ２次元フォトニック結晶
EP1844356A4 (en) METHOD FOR STRUCTURING CONDUCTIVE LAYERS, METHOD FOR PRODUCING POLARIZERS, AND POLARIZERS PRODUCED THEREWITH
WO2010053842A3 (en) Polarization aligned and polarization graded thermoelectric materials and method of forming thereof
WO2008111219A1 (ja) 熱電変換装置
WO2010114766A3 (en) Thermoelectric devices including thermoelectric elements having off-set metal pads and related structures, methods, and systems
EP2077585A4 (en) Solar battery element and method for manufacturing the same
WO2012026775A3 (en) Thermoelectric material, and thermoelectric module and thermoelectric device comprising the thermoelectric material

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880025539.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08739443

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009524409

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2008739443

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12670102

Country of ref document: US