WO2009016301A3 - Transistor organique à effet de champ et procédé de fabrication de ce transistor - Google Patents

Transistor organique à effet de champ et procédé de fabrication de ce transistor Download PDF

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Publication number
WO2009016301A3
WO2009016301A3 PCT/FR2008/051330 FR2008051330W WO2009016301A3 WO 2009016301 A3 WO2009016301 A3 WO 2009016301A3 FR 2008051330 W FR2008051330 W FR 2008051330W WO 2009016301 A3 WO2009016301 A3 WO 2009016301A3
Authority
WO
WIPO (PCT)
Prior art keywords
volume
transistor
semiconductor layer
organic field
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2008/051330
Other languages
English (en)
Other versions
WO2009016301A2 (fr
Inventor
Mohamed Benwadih
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sofileta
Original Assignee
Sofileta
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sofileta filed Critical Sofileta
Priority to EP08826858A priority Critical patent/EP2168182A2/fr
Priority to JP2010515583A priority patent/JP2010533372A/ja
Priority to BRPI0812454-0A2A priority patent/BRPI0812454A2/pt
Priority to CN200880024601.9A priority patent/CN101779307B/zh
Publication of WO2009016301A2 publication Critical patent/WO2009016301A2/fr
Publication of WO2009016301A3 publication Critical patent/WO2009016301A3/fr
Priority to US12/628,415 priority patent/US8258504B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene

Landscapes

  • Thin Film Transistor (AREA)

Abstract

Ce transistor organique à effet de champ comprend une couche semi-conductrice (10) réalisée en matériau semi-conducteur organique. La mobilité μsup des porteurs de charges dans un premier volume de la couche semi-conductrice est dix fois supérieure à la mobilité μmf des porteurs de charges dans un second volume de la couche semi-conductrice, le premier volume correspondant aux 10% du volume de la couche semi-conductrice les plus proches de l'électrode de grille et le second volume correspondant aux 10% du volume de la couche semi-conductrice les plus proches des électrodes de drain et de source.
PCT/FR2008/051330 2007-07-13 2008-07-15 Transistor organique à effet de champ et procédé de fabrication de ce transistor Ceased WO2009016301A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP08826858A EP2168182A2 (fr) 2007-07-13 2008-07-15 Transistor organique à effet de champ et procédé de fabrication de ce transistor
JP2010515583A JP2010533372A (ja) 2007-07-13 2008-07-15 有機電界効果トランジスタおよびこのトランジスタを製作する方法
BRPI0812454-0A2A BRPI0812454A2 (pt) 2007-07-13 2008-07-15 Transistor de efeito de campo orgânico e processo para produção do mesmo
CN200880024601.9A CN101779307B (zh) 2007-07-13 2008-07-15 有机场效应晶体管和制造该晶体管的方法
US12/628,415 US8258504B2 (en) 2007-07-13 2009-12-01 Organic field-effect transistor and method of fabricating this transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0705096 2007-07-13
FR0705096A FR2918797B1 (fr) 2007-07-13 2007-07-13 Transistor organique a effet de champ et procede de fabrication de ce transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/628,415 Continuation US8258504B2 (en) 2007-07-13 2009-12-01 Organic field-effect transistor and method of fabricating this transistor

Publications (2)

Publication Number Publication Date
WO2009016301A2 WO2009016301A2 (fr) 2009-02-05
WO2009016301A3 true WO2009016301A3 (fr) 2009-04-16

Family

ID=39033859

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2008/051330 Ceased WO2009016301A2 (fr) 2007-07-13 2008-07-15 Transistor organique à effet de champ et procédé de fabrication de ce transistor

Country Status (8)

Country Link
US (1) US8258504B2 (fr)
EP (1) EP2168182A2 (fr)
JP (1) JP2010533372A (fr)
KR (1) KR101474335B1 (fr)
CN (1) CN101779307B (fr)
BR (1) BRPI0812454A2 (fr)
FR (1) FR2918797B1 (fr)
WO (1) WO2009016301A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008036063B4 (de) * 2008-08-04 2017-08-31 Novaled Gmbh Organischer Feldeffekt-Transistor
JP2010040897A (ja) * 2008-08-07 2010-02-18 Sony Corp 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、および電子機器
JP5398910B2 (ja) * 2010-05-12 2014-01-29 帝人株式会社 有機半導体膜及びその製造方法、並びにコンタクトプリント用スタンプ
JP6045049B2 (ja) 2012-04-05 2016-12-14 ノヴァレッド ゲーエムベーハー 有機電界効果トランジスタ及びその製造方法
EP2790238B1 (fr) 2013-04-10 2018-08-22 Novaled GmbH Transistor à effet de champ organique et procédé de production
CN109946349B (zh) * 2019-04-02 2021-10-29 武汉轻工大学 有机场效应晶体管及其制备方法以及生物胺气敏传感器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050104060A1 (en) * 2002-04-29 2005-05-19 Marcus Halik Silicon particles as additives for improving charge carrier mobility in organic semiconductors
US20060108581A1 (en) * 2004-11-23 2006-05-25 Taek Ahn Organic thin film transistor, method of manufacturing the same, and flat panel display device with the organic thin film transistor
EP1732150A1 (fr) * 2005-06-07 2006-12-13 Xerox Corporation Transistor à couche mince organique avec des électrodes multicouches

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JP4419425B2 (ja) * 2002-04-22 2010-02-24 コニカミノルタホールディングス株式会社 有機薄膜トランジスタ素子
KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
JP2005045188A (ja) * 2003-07-25 2005-02-17 Fuji Xerox Co Ltd 電子素子、集積回路およびその製造方法
KR101007813B1 (ko) * 2003-11-24 2011-01-14 삼성전자주식회사 완충층을 포함하는 유기박막 트랜지스터
JP2005223048A (ja) * 2004-02-04 2005-08-18 Ricoh Co Ltd 半導体装置、半導体装置の製造方法、および表示装置
JP4304275B2 (ja) * 2004-03-24 2009-07-29 独立行政法人産業技術総合研究所 有機半導体薄膜トランジスタ
US7692184B2 (en) * 2004-03-24 2010-04-06 Japan Science And Technology Agency Substrate with organic thin film, and transistor using same
KR101127307B1 (ko) * 2004-05-14 2012-03-29 소니 도이칠란트 게엠베하 탄소 나노튜브 및 금속 탄산염을 포함하는 복합 재료
JP2006008454A (ja) * 2004-06-25 2006-01-12 Fuji Xerox Co Ltd 炭素微粒子構造体とその製造方法、およびこれを製造するための炭素微粒子転写体と炭素微粒子構造体製造用溶液、並びに炭素微粒子構造体を用いた炭素微粒子構造体電子素子とその製造方法、そして集積回路
JP4569207B2 (ja) * 2004-07-28 2010-10-27 ソニー株式会社 電界効果型トランジスタの製造方法
KR100667935B1 (ko) * 2004-11-23 2007-01-11 삼성에스디아이 주식회사 유기 박막 트랜지스터, 그 제조방법 및 유기 박막트랜지스터를 구비한 평판 표시 장치
JP5041267B2 (ja) * 2005-01-20 2012-10-03 富士電機株式会社 薄膜電界効果トランジスタ、およびその製造方法
KR101102222B1 (ko) * 2005-02-04 2012-01-05 삼성전자주식회사 전기장 처리를 이용한 유기 박막 트랜지스터의 제조방법
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JP5015438B2 (ja) * 2005-08-30 2012-08-29 独立行政法人理化学研究所 薄膜トランジスタおよびその製造方法
KR101212152B1 (ko) * 2005-12-29 2012-12-13 엘지디스플레이 주식회사 유기박막트랜지스터 및 그 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050104060A1 (en) * 2002-04-29 2005-05-19 Marcus Halik Silicon particles as additives for improving charge carrier mobility in organic semiconductors
US20060108581A1 (en) * 2004-11-23 2006-05-25 Taek Ahn Organic thin film transistor, method of manufacturing the same, and flat panel display device with the organic thin film transistor
EP1732150A1 (fr) * 2005-06-07 2006-12-13 Xerox Corporation Transistor à couche mince organique avec des électrodes multicouches

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DODABALAPUR A ET AL: "ORGANIC HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS", SCIENCE, AMERICAN ASSOCIATION FOR THE ADVANCEMENT OF SCIENCE,, US, vol. 269, 15 September 1995 (1995-09-15), pages 1560 - 1562, XP000644688, ISSN: 0036-8075 *
KUWAHARA EIJI ET AL: "Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 85, no. 20, 15 November 2004 (2004-11-15), pages 4765 - 4767, XP012063458, ISSN: 0003-6951 *
RAM M K ET AL: "Dielectric relaxation in thin conducting polyaniline films", POLYMER, ELSEVIER SCIENCE PUBLISHERS B.V, GB, vol. 39, no. 15, July 1998 (1998-07-01), pages 3399 - 3404, XP004122250, ISSN: 0032-3861 *

Also Published As

Publication number Publication date
WO2009016301A2 (fr) 2009-02-05
FR2918797A1 (fr) 2009-01-16
US8258504B2 (en) 2012-09-04
CN101779307B (zh) 2012-12-12
EP2168182A2 (fr) 2010-03-31
CN101779307A (zh) 2010-07-14
KR20100055409A (ko) 2010-05-26
US20100096625A1 (en) 2010-04-22
BRPI0812454A2 (pt) 2014-12-02
JP2010533372A (ja) 2010-10-21
FR2918797B1 (fr) 2009-11-06
KR101474335B1 (ko) 2014-12-18

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