WO2009016778A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
WO2009016778A1
WO2009016778A1 PCT/JP2008/000303 JP2008000303W WO2009016778A1 WO 2009016778 A1 WO2009016778 A1 WO 2009016778A1 JP 2008000303 W JP2008000303 W JP 2008000303W WO 2009016778 A1 WO2009016778 A1 WO 2009016778A1
Authority
WO
WIPO (PCT)
Prior art keywords
fin
insulating film
gate insulating
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/000303
Other languages
English (en)
French (fr)
Inventor
Yuichiro Sasaki
Katsumi Okashita
Keiichi Nakamoto
Hisataka Kanada
Bunji Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to JP2008551379A priority Critical patent/JP4814960B2/ja
Priority to CN2008800005987A priority patent/CN101542743B/zh
Priority to EP08710456.8A priority patent/EP2175492A4/en
Priority to US12/193,861 priority patent/US8063437B2/en
Publication of WO2009016778A1 publication Critical patent/WO2009016778A1/ja
Priority to US12/512,617 priority patent/US8004045B2/en
Anticipated expiration legal-status Critical
Priority to US13/185,221 priority patent/US8536000B2/en
Priority to US13/245,497 priority patent/US20120015504A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6212—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections
    • H10D30/6213—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections having rounded corners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

　上部に不純物領域６１ａ及び側部に不純物領域６１ｂを有するフィン型半導体領域６１を跨ぐようにゲート絶縁膜６２が形成されている。ゲート絶縁膜６２の外側に位置する部分のフィン型半導体領域６１における上部コーナーの曲率半径ｒ’は、ゲート絶縁膜６２の下側に位置する部分のフィン型半導体領域６１における上部コーナーの曲率半径ｒよりも大きく且つ２ｒ以下である。
PCT/JP2008/000303 2007-07-27 2008-02-22 半導体装置及びその製造方法 Ceased WO2009016778A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2008551379A JP4814960B2 (ja) 2007-07-27 2008-02-22 半導体装置の製造方法
CN2008800005987A CN101542743B (zh) 2007-07-27 2008-02-22 半导体装置的制造方法
EP08710456.8A EP2175492A4 (en) 2007-07-27 2008-02-22 Semiconductor device and method for manufacturing the same
US12/193,861 US8063437B2 (en) 2007-07-27 2008-08-19 Semiconductor device and method for producing the same
US12/512,617 US8004045B2 (en) 2007-07-27 2009-07-30 Semiconductor device and method for producing the same
US13/185,221 US8536000B2 (en) 2007-07-27 2011-07-18 Method for producing a semiconductor device have fin-shaped semiconductor regions
US13/245,497 US20120015504A1 (en) 2007-07-27 2011-09-26 Semiconductor device and method for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-195860 2007-07-27
JP2007195860 2007-07-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/193,861 Continuation US8063437B2 (en) 2007-07-27 2008-08-19 Semiconductor device and method for producing the same

Publications (1)

Publication Number Publication Date
WO2009016778A1 true WO2009016778A1 (ja) 2009-02-05

Family

ID=40304023

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000303 Ceased WO2009016778A1 (ja) 2007-07-27 2008-02-22 半導体装置及びその製造方法

Country Status (7)

Country Link
US (2) US8063437B2 (ja)
EP (1) EP2175492A4 (ja)
JP (2) JP4814960B2 (ja)
KR (1) KR20100048954A (ja)
CN (2) CN101542743B (ja)
TW (1) TWI493707B (ja)
WO (1) WO2009016778A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010150442A1 (ja) * 2009-06-24 2010-12-29 パナソニック株式会社 半導体装置及びその製造方法
JP2011129678A (ja) * 2009-12-17 2011-06-30 Panasonic Corp 半導体装置及びその製造方法
WO2011080857A1 (ja) * 2009-12-28 2011-07-07 パナソニック株式会社 半導体装置の製造方法及びプラズマドーピング装置
JP2012517693A (ja) * 2009-02-10 2012-08-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体デバイスの形成方法及びエッチング・マスク
US8324685B2 (en) 2009-02-12 2012-12-04 Panasonic Corporation Semiconductor device having a fin-type semiconductor region
KR20140059772A (ko) * 2011-03-25 2014-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 그것을 이용한 메모리 및 반도체 회로
JP2016086178A (ja) * 2009-07-17 2016-05-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN109506121A (zh) * 2018-12-27 2019-03-22 东风汽车集团股份有限公司乘用车公司 过拉延结构、冲压产品及冲压模具

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4866918B2 (ja) * 2007-01-22 2012-02-01 パナソニック株式会社 半導体装置
JP2012517689A (ja) * 2009-02-12 2012-08-02 パナソニック株式会社 半導体装置及びその製造方法
US8305829B2 (en) 2009-02-23 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Memory power gating circuit for controlling internal voltage of a memory array, system and method for controlling the same
US8305790B2 (en) 2009-03-16 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical anti-fuse and related applications
US8957482B2 (en) 2009-03-31 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse and related applications
US8912602B2 (en) 2009-04-14 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods for forming the same
US8461015B2 (en) 2009-07-08 2013-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. STI structure and method of forming bottom void in same
US8298925B2 (en) 2010-11-08 2012-10-30 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming ultra shallow junction
US8472227B2 (en) 2010-01-27 2013-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits and methods for forming the same
US8440517B2 (en) 2010-10-13 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of fabricating the same
US9484462B2 (en) 2009-09-24 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure of fin field effect transistor
US8187928B2 (en) * 2010-09-21 2012-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming integrated circuits
US8629478B2 (en) 2009-07-31 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure for high mobility multiple-gate transistor
US8264021B2 (en) * 2009-10-01 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Finfets and methods for forming the same
US8114721B2 (en) * 2009-12-15 2012-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of controlling gate thickness in forming FinFET devices
US8623728B2 (en) 2009-07-28 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high germanium concentration SiGe stressor
US8264032B2 (en) 2009-09-01 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Accumulation type FinFET, circuits and fabrication method thereof
US8482073B2 (en) 2010-03-25 2013-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit including FINFETs and methods for forming the same
US8980719B2 (en) 2010-04-28 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for doping fin field-effect transistors
US8497528B2 (en) 2010-05-06 2013-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a strained structure
US8759943B2 (en) 2010-10-08 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having notched fin structure and method of making the same
US9040393B2 (en) 2010-01-14 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor structure
US8778603B2 (en) * 2010-03-15 2014-07-15 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying substrate relief features using ion implantation
US8603924B2 (en) 2010-10-19 2013-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming gate dielectric material
US9048181B2 (en) 2010-11-08 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming ultra shallow junction
US8769446B2 (en) 2010-11-12 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for increasing fin device density for unaligned fins
US8592915B2 (en) 2011-01-25 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Doped oxide for shallow trench isolation (STI)
US8877602B2 (en) 2011-01-25 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms of doping oxide for forming shallow trench isolation
US8431453B2 (en) 2011-03-31 2013-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
US9406518B2 (en) * 2011-11-18 2016-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. (110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor substrate
KR101894221B1 (ko) 2012-03-21 2018-10-04 삼성전자주식회사 전계 효과 트랜지스터 및 이를 포함하는 반도체 장치
CN103325833B (zh) * 2012-03-21 2018-08-07 三星电子株式会社 场效应晶体管以及包括其的半导体器件和集成电路器件
US20130320453A1 (en) * 2012-06-01 2013-12-05 Abhijit Jayant Pethe Area scaling on trigate transistors
US9093335B2 (en) * 2012-11-29 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Calculating carrier concentrations in semiconductor Fins using probed resistance
US9299564B2 (en) * 2012-12-12 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Ion implant for defect control
KR102175854B1 (ko) * 2013-11-14 2020-11-09 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
US20150214331A1 (en) * 2014-01-30 2015-07-30 Globalfoundries Inc. Replacement metal gate including dielectric gate material
TWI567795B (zh) * 2015-01-08 2017-01-21 上海凱世通半導體有限公司 鰭式場效電晶體的摻雜方法
CN105826381B (zh) * 2015-01-09 2018-11-16 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
KR102400375B1 (ko) * 2015-04-30 2022-05-20 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11271094B2 (en) 2018-11-29 2022-03-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of manufacturing the same
KR20200066157A (ko) * 2018-11-29 2020-06-09 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 구조체 및 그 제조 방법
KR102836756B1 (ko) * 2020-07-29 2025-07-18 삼성전자주식회사 반도체 장치
US20220100078A1 (en) * 2020-09-25 2022-03-31 Applied Materials, Inc. Devices and methods for variable etch depths
US12069862B2 (en) 2021-07-23 2024-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor dies including low and high workfunction semiconductor devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295416A (ja) 1987-05-28 1989-11-29 Matsushita Electric Ind Co Ltd プラズマドーピング方法
JP2004047696A (ja) * 2002-07-11 2004-02-12 Matsushita Electric Ind Co Ltd プラズマドーピング方法及び装置、整合回路
WO2006064772A1 (ja) 2004-12-13 2006-06-22 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法
JP2006196821A (ja) 2005-01-17 2006-07-27 Fujitsu Ltd 半導体装置とその製造方法
WO2006098109A1 (ja) * 2005-02-23 2006-09-21 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法及び装置
WO2006106872A1 (ja) * 2005-03-30 2006-10-12 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法及び装置

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912065A (en) 1987-05-28 1990-03-27 Matsushita Electric Industrial Co., Ltd. Plasma doping method
EP0417457A3 (en) * 1989-08-11 1991-07-03 Seiko Instruments Inc. Method of producing field effect transistor
US5824455A (en) * 1990-09-26 1998-10-20 Canon Kabushiki Kaisha Processing method and apparatus
US20010046566A1 (en) * 2000-03-23 2001-11-29 Chu Paul K. Apparatus and method for direct current plasma immersion ion implantation
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
CN100378901C (zh) * 2002-11-25 2008-04-02 国际商业机器公司 应变鳍型场效应晶体管互补金属氧化物半导体器件结构
US6855990B2 (en) * 2002-11-26 2005-02-15 Taiwan Semiconductor Manufacturing Co., Ltd Strained-channel multiple-gate transistor
US6803631B2 (en) * 2003-01-23 2004-10-12 Advanced Micro Devices, Inc. Strained channel finfet
US6844238B2 (en) * 2003-03-26 2005-01-18 Taiwan Semiconductor Manufacturing Co., Ltd Multiple-gate transistors with improved gate control
US20060170053A1 (en) * 2003-05-09 2006-08-03 Yee-Chia Yeo Accumulation mode multiple gate transistor
KR100843244B1 (ko) 2007-04-19 2008-07-02 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7005330B2 (en) * 2003-06-27 2006-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for forming the gate electrode in a multiple-gate transistor
CN100437912C (zh) * 2003-08-25 2008-11-26 松下电器产业株式会社 杂质导入层的形成方法和器件的制造方法
US6970373B2 (en) * 2003-10-02 2005-11-29 Intel Corporation Method and apparatus for improving stability of a 6T CMOS SRAM cell
KR100585111B1 (ko) 2003-11-24 2006-06-01 삼성전자주식회사 게르마늄 채널 영역을 가지는 비평면 트랜지스터 및 그제조 방법
WO2005074036A1 (ja) 2004-01-30 2005-08-11 Nec Corporation 電界効果型トランジスタおよびその製造方法
KR100574971B1 (ko) 2004-02-17 2006-05-02 삼성전자주식회사 멀티-게이트 구조의 반도체 소자 및 그 제조 방법
DE102004020593A1 (de) 2004-04-27 2005-11-24 Infineon Technologies Ag Fin-Feldeffekttransistor-Anordnung und Verfahren zum Herstellen einer Fin-Feldeffektransistor-Anordnung
KR100604870B1 (ko) 2004-06-16 2006-07-31 삼성전자주식회사 접합 영역의 어브럽트니스를 개선시킬 수 있는 전계 효과트랜지스터 및 그 제조방법
US9201599B2 (en) 2004-07-19 2015-12-01 Marvell International Ltd. System and method for transmitting data in storage controllers
KR100682892B1 (ko) 2004-09-25 2007-02-15 삼성전자주식회사 박막 트랜지스터의 제조방법
JP4119413B2 (ja) * 2004-09-30 2008-07-16 株式会社東芝 知識情報収集システム、知識検索システム及び知識情報収集方法
TWI277210B (en) * 2004-10-26 2007-03-21 Nanya Technology Corp FinFET transistor process
US20060099830A1 (en) * 2004-11-05 2006-05-11 Varian Semiconductor Equipment Associates, Inc. Plasma implantation using halogenated dopant species to limit deposition of surface layers
KR100672826B1 (ko) * 2004-12-03 2007-01-22 삼성전자주식회사 핀 전계 효과 트랜지스터 및 그 제조방법
US7282766B2 (en) * 2005-01-17 2007-10-16 Fujitsu Limited Fin-type semiconductor device with low contact resistance
JP4825526B2 (ja) 2005-03-28 2011-11-30 株式会社東芝 Ｆｉｎ型チャネルトランジスタおよびその製造方法
JP4718908B2 (ja) 2005-06-14 2011-07-06 株式会社東芝 半導体装置および半導体装置の製造方法
US20070090408A1 (en) 2005-09-29 2007-04-26 Amlan Majumdar Narrow-body multiple-gate FET with dominant body transistor for high performance
US7638381B2 (en) 2005-10-07 2009-12-29 International Business Machines Corporation Methods for fabricating a semiconductor structure using a mandrel and semiconductor structures formed thereby
US7531423B2 (en) 2005-12-22 2009-05-12 International Business Machines Corporation Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same
KR100792384B1 (ko) * 2005-12-27 2008-01-09 주식회사 하이닉스반도체 5 채널 핀 트랜지스터 및 그 제조 방법
KR100714288B1 (ko) 2005-12-29 2007-05-02 주식회사 하이닉스반도체 핀 트랜지스터 제조 방법
KR100683867B1 (ko) * 2006-02-09 2007-02-15 삼성전자주식회사 반도체 소자 및 그 형성 방법
JP2007242737A (ja) 2006-03-06 2007-09-20 Toshiba Corp 半導体装置
JP2007250665A (ja) 2006-03-14 2007-09-27 Toshiba Corp 半導体装置及びその製造方法
EP1892765A1 (en) 2006-08-23 2008-02-27 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Method for doping a fin-based semiconductor device
US7494862B2 (en) * 2006-09-29 2009-02-24 Intel Corporation Methods for uniform doping of non-planar transistor structures
JP4866918B2 (ja) 2007-01-22 2012-02-01 パナソニック株式会社 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295416A (ja) 1987-05-28 1989-11-29 Matsushita Electric Ind Co Ltd プラズマドーピング方法
JP2004047696A (ja) * 2002-07-11 2004-02-12 Matsushita Electric Ind Co Ltd プラズマドーピング方法及び装置、整合回路
WO2006064772A1 (ja) 2004-12-13 2006-06-22 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法
JP2006196821A (ja) 2005-01-17 2006-07-27 Fujitsu Ltd 半導体装置とその製造方法
WO2006098109A1 (ja) * 2005-02-23 2006-09-21 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法及び装置
WO2006106872A1 (ja) * 2005-03-30 2006-10-12 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法及び装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2175492A4

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012517693A (ja) * 2009-02-10 2012-08-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体デバイスの形成方法及びエッチング・マスク
US8324685B2 (en) 2009-02-12 2012-12-04 Panasonic Corporation Semiconductor device having a fin-type semiconductor region
JP4794692B2 (ja) * 2009-06-24 2011-10-19 パナソニック株式会社 半導体装置の製造方法
WO2010150442A1 (ja) * 2009-06-24 2010-12-29 パナソニック株式会社 半導体装置及びその製造方法
US8124507B2 (en) 2009-06-24 2012-02-28 Panasonic Corporation Semiconductor device and method for fabricating the same
JP2016086178A (ja) * 2009-07-17 2016-05-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10256291B2 (en) 2009-07-17 2019-04-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2011129678A (ja) * 2009-12-17 2011-06-30 Panasonic Corp 半導体装置及びその製造方法
WO2011080857A1 (ja) * 2009-12-28 2011-07-07 パナソニック株式会社 半導体装置の製造方法及びプラズマドーピング装置
US8574972B2 (en) 2009-12-28 2013-11-05 Panasonic Corporation Method for fabricating semiconductor device and plasma doping apparatus
KR20140059772A (ko) * 2011-03-25 2014-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 그것을 이용한 메모리 및 반도체 회로
KR101645682B1 (ko) * 2011-03-25 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 그것을 이용한 메모리 및 반도체 회로
CN109506121A (zh) * 2018-12-27 2019-03-22 东风汽车集团股份有限公司乘用车公司 过拉延结构、冲压产品及冲压模具
CN109506121B (zh) * 2018-12-27 2024-01-23 东风汽车集团股份有限公司 过拉延结构、冲压产品及冲压模具

Also Published As

Publication number Publication date
TW200905882A (en) 2009-02-01
JP2011166164A (ja) 2011-08-25
CN101542743A (zh) 2009-09-23
US20090026540A1 (en) 2009-01-29
EP2175492A1 (en) 2010-04-14
JPWO2009016778A1 (ja) 2010-10-14
CN102723366A (zh) 2012-10-10
CN102723366B (zh) 2015-03-04
US8063437B2 (en) 2011-11-22
JP4814960B2 (ja) 2011-11-16
JP5449247B2 (ja) 2014-03-19
EP2175492A4 (en) 2017-08-23
CN101542743B (zh) 2012-09-05
TWI493707B (zh) 2015-07-21
US20120015504A1 (en) 2012-01-19
KR20100048954A (ko) 2010-05-11

Similar Documents

Publication Publication Date Title
WO2009016778A1 (ja) 半導体装置及びその製造方法
WO2011087605A3 (en) Wrap-around contacts for finfet and tri-gate devices
SG166085A1 (en) Semiconductor device including a mos transistor and production method therefor
WO2007120293A3 (en) Process for forming an electronic device including a fin-type structure
WO2005067677A3 (en) High performance strained silicon finfets device and method for forming same
TW200731530A (en) Semiconductor devices and methods for fabricating the same
WO2013101790A3 (en) Finfet with merged fins and vertical silicide
EP1923908A3 (en) Fin-FET device with a void between pairs of fins and method of manufacturing the same
TW200644224A (en) Semiconductor device and method for manufacturing the same
WO2011037743A3 (en) Method and structure for forming high-performance fets with embedded stressors
GB2454135A (en) A field effect transistor having a stressed contact etch stop layer with reduced conformality
WO2010051133A3 (en) Semiconductor devices having faceted silicide contacts, and related fabrication methods
EP2383778A3 (en) Semiconductor device, and method for manufacturing the same
WO2012119125A3 (en) High performance graphene transistors and fabrication processes thereof
TW200742045A (en) Semiconductor device having a recess channel transistor
WO2006076101A3 (en) A method to manufacture a universal footprint for a package with exposed chip
WO2008086001A3 (en) Active area shaping for iii-nitride device and process for its manufacture
WO2009051663A3 (en) Transistor device and method
WO2008090771A1 (ja) 半導体装置及びその製造方法
TW200633125A (en) Semiconductor device and method of semiconductor device
TW200607094A (en) Semiconductor device and method of manufacturing thereof
WO2007075755A3 (en) Cmos device with asymmetric gate strain
TW200627641A (en) Semiconductor device
TW200610067A (en) Thin channel mosfet with source/drain stressors
WO2012106834A8 (en) Semiconductor device and related fabrication methods

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880000598.7

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2008551379

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2008710456

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020097004969

Country of ref document: KR

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08710456

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE