WO2009017026A1 - 有機エレクトロルミネッセンス素子およびその製造方法 - Google Patents

有機エレクトロルミネッセンス素子およびその製造方法 Download PDF

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Publication number
WO2009017026A1
WO2009017026A1 PCT/JP2008/063286 JP2008063286W WO2009017026A1 WO 2009017026 A1 WO2009017026 A1 WO 2009017026A1 JP 2008063286 W JP2008063286 W JP 2008063286W WO 2009017026 A1 WO2009017026 A1 WO 2009017026A1
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WIPO (PCT)
Prior art keywords
organic
leak current
layer
manufacturing
same
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Ceased
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PCT/JP2008/063286
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English (en)
French (fr)
Inventor
Satoshi Amamiya
Teruyuki Matsue
Yoshinobu Ono
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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Priority to US12/670,563 priority Critical patent/US8628986B2/en
Priority to EP08791538A priority patent/EP2175504A4/en
Priority to CN200880100910XA priority patent/CN101765929B/zh
Publication of WO2009017026A1 publication Critical patent/WO2009017026A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/341—Short-circuit prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

　上部電極と下部電極との間に有機層を介して流れるリーク電流を抑制する有機ＥＬ素子を提供する。有機ＥＬ素子（５１）は、バンク（３）で囲まれた画素領域（Ｒ１１）に形成されて少なくとも１層の発光層（６）を含む有機層（９）と、有機層（９）を挟んで形成された上部電極（７）及び下部電極（２）と、画素領域（Ｒ１１）とバンク領域（Ｒ１３）との間の境界領域（Ｒ１２）の上部電極（７）と下部電極（２）との間に形成され、画素領域（Ｒ１１）とバンク領域（Ｒ１３）との間の境界領域（Ｒ１２）の上部電極（７）と下部電極（２）との間に形成されたリーク電流ブロック層（５）とを備え、リーク電流ブロック層（５）の基板厚み方向における電気抵抗は、リーク電流ブロック層（５）と第１電極（２）との間に介在する有機層（９）の基板厚み方向における電気抵抗よりも大きい。
PCT/JP2008/063286 2007-07-31 2008-07-24 有機エレクトロルミネッセンス素子およびその製造方法 Ceased WO2009017026A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/670,563 US8628986B2 (en) 2007-07-31 2008-07-24 Organic electroluminescent element and method for manufacturing the same
EP08791538A EP2175504A4 (en) 2007-07-31 2008-07-24 ORGANIC ELECTROLUMINESCENE ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
CN200880100910XA CN101765929B (zh) 2007-07-31 2008-07-24 有机电致发光元件及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007200100 2007-07-31
JP2007-200100 2007-07-31

Publications (1)

Publication Number Publication Date
WO2009017026A1 true WO2009017026A1 (ja) 2009-02-05

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PCT/JP2008/063286 Ceased WO2009017026A1 (ja) 2007-07-31 2008-07-24 有機エレクトロルミネッセンス素子およびその製造方法

Country Status (7)

Country Link
US (1) US8628986B2 (ja)
EP (1) EP2175504A4 (ja)
JP (2) JP4974978B2 (ja)
KR (1) KR101581475B1 (ja)
CN (1) CN101765929B (ja)
TW (1) TWI455642B (ja)
WO (1) WO2009017026A1 (ja)

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CN102770980A (zh) * 2010-02-25 2012-11-07 住友化学株式会社 发光装置及其制造方法
CN102132630B (zh) * 2009-11-11 2014-11-12 松下电器产业株式会社 有机el元件及其制造方法
US12127420B2 (en) 2019-02-15 2024-10-22 Sony Semiconductor Solutions Corpporation Display device, method for manufacturing display device, and electronic apparatus

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JP5330263B2 (ja) 2007-12-07 2013-10-30 株式会社東芝 蛍光体およびそれを用いたｌｅｄ発光装置
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JP2012515438A (ja) * 2009-01-12 2012-07-05 ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン 電子／正孔励起阻止層を用いた有機太陽電池の開路電圧の向上
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JP5437736B2 (ja) 2009-08-19 2014-03-12 パナソニック株式会社 有機ｅｌ素子
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TWI455642B (zh) 2014-10-01
TW200917888A (en) 2009-04-16
JP2012134171A (ja) 2012-07-12
CN101765929B (zh) 2012-10-24
US8628986B2 (en) 2014-01-14
JP4974978B2 (ja) 2012-07-11
US20100193817A1 (en) 2010-08-05
KR20100051637A (ko) 2010-05-17
KR101581475B1 (ko) 2015-12-30

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