WO2009020041A1 - 記憶素子および記憶装置 - Google Patents

記憶素子および記憶装置 Download PDF

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Publication number
WO2009020041A1
WO2009020041A1 PCT/JP2008/063761 JP2008063761W WO2009020041A1 WO 2009020041 A1 WO2009020041 A1 WO 2009020041A1 JP 2008063761 W JP2008063761 W JP 2008063761W WO 2009020041 A1 WO2009020041 A1 WO 2009020041A1
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WO
WIPO (PCT)
Prior art keywords
resistance
layer
ion source
source layer
improve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/063761
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English (en)
French (fr)
Inventor
Kazuhiro Ohba
Tetsuya Mizuguchi
Shuichiro Yasuda
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Sony Corp
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Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to US12/670,887 priority Critical patent/US8492740B2/en
Priority to EP08791976A priority patent/EP2178122B1/en
Priority to CN2008801012564A priority patent/CN101765914B/zh
Priority to KR1020107000797A priority patent/KR101496281B1/ko
Publication of WO2009020041A1 publication Critical patent/WO2009020041A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5614—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

　抵抗変化型の記憶装置において、記憶および消去状態の抵抗値の保持能力を向上させる。下部電極１と上部電極４との間に、高抵抗層２およびイオン源層３からなる記憶層５を有する。イオン源層３は、Ｓ（硫黄），Ｓｅ（セレン）およびＴｅ（テルル）（カルコゲナイド元素）などのイオン伝導材料およびＺｒ（ジルコニウム）などのイオン化する金属元素と共に、添加元素としてＡｌ（アルミニウム）を含有している。イオン源層３にＡｌが含まれているので、消去動作時にはアノード極上でＡｌを含んだ高抵抗層（Ａｌ酸化物）が形成され、高抵抗状態の保持性能が向上すると共に動作速度が改善される。 
PCT/JP2008/063761 2007-08-06 2008-07-31 記憶素子および記憶装置 Ceased WO2009020041A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/670,887 US8492740B2 (en) 2007-08-06 2008-07-31 Memory element and memory device
EP08791976A EP2178122B1 (en) 2007-08-06 2008-07-31 Memory element and memory device
CN2008801012564A CN101765914B (zh) 2007-08-06 2008-07-31 存储元件和存储装置
KR1020107000797A KR101496281B1 (ko) 2007-08-06 2008-07-31 기억 소자 및 기억 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007204031A JP5088036B2 (ja) 2007-08-06 2007-08-06 記憶素子および記憶装置
JP2007-204031 2007-08-06

Publications (1)

Publication Number Publication Date
WO2009020041A1 true WO2009020041A1 (ja) 2009-02-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063761 Ceased WO2009020041A1 (ja) 2007-08-06 2008-07-31 記憶素子および記憶装置

Country Status (7)

Country Link
US (1) US8492740B2 (ja)
EP (1) EP2178122B1 (ja)
JP (1) JP5088036B2 (ja)
KR (1) KR101496281B1 (ja)
CN (1) CN101765914B (ja)
TW (1) TWI489622B (ja)
WO (1) WO2009020041A1 (ja)

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US9343665B2 (en) 2008-07-02 2016-05-17 Micron Technology, Inc. Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
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JP5630021B2 (ja) 2010-01-19 2014-11-26 ソニー株式会社 記憶素子および記憶装置
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See also references of EP2178122A4

Also Published As

Publication number Publication date
EP2178122A1 (en) 2010-04-21
TW200915561A (en) 2009-04-01
KR20100050452A (ko) 2010-05-13
US8492740B2 (en) 2013-07-23
EP2178122A4 (en) 2011-08-31
JP2009043757A (ja) 2009-02-26
EP2178122B1 (en) 2012-11-28
CN101765914B (zh) 2012-09-26
TWI489622B (zh) 2015-06-21
KR101496281B1 (ko) 2015-02-26
CN101765914A (zh) 2010-06-30
US20100195371A1 (en) 2010-08-05
JP5088036B2 (ja) 2012-12-05

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