WO2009028283A1 - 半導体歪みセンサー - Google Patents

半導体歪みセンサー Download PDF

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Publication number
WO2009028283A1
WO2009028283A1 PCT/JP2008/063354 JP2008063354W WO2009028283A1 WO 2009028283 A1 WO2009028283 A1 WO 2009028283A1 JP 2008063354 W JP2008063354 W JP 2008063354W WO 2009028283 A1 WO2009028283 A1 WO 2009028283A1
Authority
WO
WIPO (PCT)
Prior art keywords
strain sensor
strain
sensor chip
base board
metal base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/063354
Other languages
English (en)
French (fr)
Inventor
Atsushi Kazama
Ryoji Okada
Tetsurou Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007219342A external-priority patent/JP2009053005A/ja
Priority claimed from JP2007246695A external-priority patent/JP4566227B2/ja
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to EP08828400.5A priority Critical patent/EP2184576B1/en
Priority to US12/674,419 priority patent/US8438931B2/en
Priority to CN200880103012XA priority patent/CN101802541B/zh
Publication of WO2009028283A1 publication Critical patent/WO2009028283A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/063—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G01L1/183—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material by measuring variations of frequency of vibrating piezo-resistive material
    • G01L1/186—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material by measuring variations of frequency of vibrating piezo-resistive material optical excitation or measuring of vibrations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L3/00—Measuring torque, work, mechanical power, or mechanical efficiency, in general
    • G01L3/02—Rotary-transmission dynamometers
    • G01L3/04—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft
    • G01L3/10—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft involving electric or magnetic means for indicating
    • G01L3/108—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft involving electric or magnetic means for indicating involving resistance strain gauges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Pressure Sensors (AREA)

Abstract

　歪み検出部としてピエゾ抵抗素子を持つ半導体基板からなる歪みセンサーチップを有する半導体歪みセンサーであって、特性が長期間安定し、測定対象物の歪みに応じて歪みセンサーチップに生じる歪みの変換係数が測定する大きさの歪み範囲において安定なもの。歪みセンサーチップが金属接合材で接合されている金属ベース板が歪みセンサーチップの側辺から突出して測定対象物に取り付けるための２個あるいは４個の張り出しメンバーを有する。好ましくは、歪みセンサーチップを金属ベース板に接合している接合領域に対応した金属ベース板下面領域と、張り出しメンバー下面との間に溝が設けられており、金属ベース板下面に溝で挟まれた突出部が設けられている。
PCT/JP2008/063354 2007-08-27 2008-07-25 半導体歪みセンサー Ceased WO2009028283A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08828400.5A EP2184576B1 (en) 2007-08-27 2008-07-25 Semiconductor strain sensor
US12/674,419 US8438931B2 (en) 2007-08-27 2008-07-25 Semiconductor strain sensor
CN200880103012XA CN101802541B (zh) 2007-08-27 2008-07-25 半导体应变传感器

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007219342A JP2009053005A (ja) 2007-08-27 2007-08-27 半導体歪センサーおよび半導体歪センサーの取付け方法
JP2007-219342 2007-08-27
JP2007-246695 2007-09-25
JP2007246695A JP4566227B2 (ja) 2007-09-25 2007-09-25 半導体歪センサーおよび半導体歪センサーの取付け方法

Publications (1)

Publication Number Publication Date
WO2009028283A1 true WO2009028283A1 (ja) 2009-03-05

Family

ID=40387011

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063354 Ceased WO2009028283A1 (ja) 2007-08-27 2008-07-25 半導体歪みセンサー

Country Status (6)

Country Link
US (1) US8438931B2 (ja)
EP (1) EP2184576B1 (ja)
KR (1) KR101151125B1 (ja)
CN (1) CN101802541B (ja)
TW (1) TW200914808A (ja)
WO (1) WO2009028283A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102934250A (zh) * 2010-03-17 2013-02-13 原子能及能源替代委员会 机械应力检测器
WO2013084294A1 (ja) * 2011-12-06 2013-06-13 株式会社日立製作所 力学量測定装置
JP2015064109A (ja) * 2007-06-26 2015-04-09 スウエイジロク・カンパニー 感知機能を有する導管接続
DE102015104410A1 (de) 2015-03-24 2016-09-29 Micronas Gmbh Drucksensor
US10295093B2 (en) 2007-06-26 2019-05-21 Swagelok Company Conduit connection with sensor on a threaded body
US10578503B2 (en) 2015-03-06 2020-03-03 Swagelok Company System and methods for strain detection in a coupling
US10976205B2 (en) 2015-09-30 2021-04-13 Hitachi Automotive Systems, Ltd. Dynamic quantity measuring apparatus having a strain sensor disposed in a groove

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DE102010002274A1 (de) * 2010-02-24 2011-08-25 Robert Bosch GmbH, 70469 Vorrichtung zur Messung von Torsionen, Biegungen und dergleichen sowie entsprechendes Herstellungsverfahren
US9121258B2 (en) 2010-11-08 2015-09-01 Baker Hughes Incorporated Sensor on a drilling apparatus
KR20140021606A (ko) * 2011-04-21 2014-02-20 가부시키가이샤 히타치세이사쿠쇼 역학량 측정 장치, 반도체 장치, 박리 검지 장치 및 모듈
US9057247B2 (en) * 2012-02-21 2015-06-16 Baker Hughes Incorporated Measurement of downhole component stress and surface conditions
US9459162B2 (en) * 2012-03-02 2016-10-04 Hitachi, Ltd. Device for measuring mechanical quantity
CN104350366A (zh) * 2012-05-25 2015-02-11 株式会社日立制作所 力学量测量装置
US9250146B2 (en) * 2013-02-12 2016-02-02 Western New England University Multidimensional strain gage
JP5975970B2 (ja) * 2013-11-20 2016-08-23 日立オートモティブシステムズ株式会社 圧力センサ
US20150296622A1 (en) * 2014-04-11 2015-10-15 Apple Inc. Flexible Printed Circuit With Semiconductor Strain Gauge
JP2015224903A (ja) 2014-05-26 2015-12-14 株式会社東芝 圧力センサ、マイクロフォン、超音波センサ、血圧センサ及びタッチパネル
US9887165B2 (en) 2014-12-10 2018-02-06 Stmicroelectronics S.R.L. IC with insulating trench and related methods
US9726587B2 (en) * 2015-01-30 2017-08-08 Stmicroelectronics S.R.L. Tensile stress measurement device with attachment plates and related methods
CN107532953A (zh) * 2015-03-31 2018-01-02 株式会社NejiLaw 带通电路径的部件和通电路径的图案化方法及部件变化测量方法
JP6344297B2 (ja) * 2015-04-16 2018-06-20 株式会社デンソー 撮像装置およびそれに用いられるプリント基板
KR102400529B1 (ko) * 2015-10-26 2022-05-20 삼성전자주식회사 금속 케이스를 구비한 전자기기 및 이에 사용되는 금속 케이스
JP2017150931A (ja) * 2016-02-24 2017-08-31 株式会社タニタ ひずみゲージ
CN105786057B (zh) * 2016-03-21 2018-01-12 安徽工程大学 印刷车间温湿度调节系统
CN105843295B (zh) * 2016-03-21 2018-02-16 安徽工程大学 冰箱温湿度检测调节装置
CN105759879B (zh) * 2016-03-21 2017-12-19 安徽科创新能源科技有限责任公司 一种印刷车间环境监测调控系统
CN105843296B (zh) * 2016-03-21 2018-03-20 安徽工程大学 印刷机烘箱的温控装置
KR102527317B1 (ko) * 2016-08-30 2023-05-03 삼성전자주식회사 금속 패드가 부착된 금속 케이스를 구비한 전자기기
US10203254B2 (en) * 2016-09-12 2019-02-12 Apple Inc. Strain sensor with thermally conductive element
JP6692762B2 (ja) * 2017-02-13 2020-05-13 日本電産コパル電子株式会社 トルクセンサ
CN107504927B (zh) * 2017-09-11 2024-04-19 重庆大学 一种基于金属薄板和压电薄膜的声表面波高温应变传感器芯片及其制备方法
CN108155220B (zh) * 2018-01-29 2019-08-02 武汉华星光电半导体显示技术有限公司 显示装置的制造方法
US10797126B2 (en) 2018-01-29 2020-10-06 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display device and manufacturing method thereof, display panel
IT201800003693A1 (it) 2018-03-16 2019-09-16 St Microelectronics Srl Sensore di sforzi, sistema di monitoraggio di integrita' strutturale per costruzioni e processo di fabbricazione di un sensore di sforzi
CN112236657A (zh) * 2018-07-06 2021-01-15 欧姆龙株式会社 应变传感器和拉伸特性测定方法
KR20200046282A (ko) 2018-10-24 2020-05-07 삼성전자주식회사 집적 회로 장치 및 고 대역폭 메모리 장치
DE102019129411A1 (de) * 2019-09-12 2021-03-18 Wika Alexander Wiegand Se & Co. Kg Aufnehmerkörper mit einem Messelement und Herstellungsverfahren für einen Aufnehmerkörper
CN115280122B (zh) * 2020-03-19 2026-04-17 导科国际贸易有限公司 扭矩传感器及机器人关节结构
DE102022118489B4 (de) * 2022-07-25 2024-06-06 Schaeffler Technologies AG & Co. KG Sensoranordnung zur Messung von mechanischen Dehnungen in einem Bauteil
CN117629469A (zh) * 2022-08-12 2024-03-01 鹏鼎控股(深圳)股份有限公司 压力传感器模组及其制作方法
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JPS59132173A (ja) * 1982-10-04 1984-07-30 エンデブコ・コーポレーション 歪感応素子の製造方法
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JPH0781171A (ja) * 1993-04-30 1995-03-28 Canon Electron Inc 記録装置
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JP2001264188A (ja) 2000-03-21 2001-09-26 Olympus Optical Co Ltd 半導体歪ゲージおよび半導体歪ゲージの製造方法
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JPS54129889A (en) * 1978-03-31 1979-10-08 Hitachi Ltd Strain measuring unit
JPS59132173A (ja) * 1982-10-04 1984-07-30 エンデブコ・コーポレーション 歪感応素子の製造方法
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WO2003102601A1 (en) * 2002-05-31 2003-12-11 Matsushita Electric Works, Ltd. Sensor package
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See also references of EP2184576A4

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015064109A (ja) * 2007-06-26 2015-04-09 スウエイジロク・カンパニー 感知機能を有する導管接続
US9400070B2 (en) 2007-06-26 2016-07-26 Swagelok Company Conduit fitting with sensor on a threaded nut
US10295093B2 (en) 2007-06-26 2019-05-21 Swagelok Company Conduit connection with sensor on a threaded body
CN102934250A (zh) * 2010-03-17 2013-02-13 原子能及能源替代委员会 机械应力检测器
WO2013084294A1 (ja) * 2011-12-06 2013-06-13 株式会社日立製作所 力学量測定装置
JPWO2013084294A1 (ja) * 2011-12-06 2015-04-27 株式会社日立製作所 力学量測定装置
US9581427B2 (en) 2011-12-06 2017-02-28 Hitachi, Ltd. Mechanical quantity measuring device
US10578503B2 (en) 2015-03-06 2020-03-03 Swagelok Company System and methods for strain detection in a coupling
DE102015104410A1 (de) 2015-03-24 2016-09-29 Micronas Gmbh Drucksensor
DE102015104410B4 (de) 2015-03-24 2018-09-13 Tdk-Micronas Gmbh Drucksensor
US10571347B2 (en) 2015-03-24 2020-02-25 Micronas Gmbh Pressure sensor comprising a sensor element arranged between two longitudinal grooves
US10976205B2 (en) 2015-09-30 2021-04-13 Hitachi Automotive Systems, Ltd. Dynamic quantity measuring apparatus having a strain sensor disposed in a groove

Also Published As

Publication number Publication date
EP2184576A1 (en) 2010-05-12
EP2184576B1 (en) 2019-05-15
CN101802541B (zh) 2013-08-07
EP2184576A4 (en) 2014-10-01
US20110227178A1 (en) 2011-09-22
US8438931B2 (en) 2013-05-14
TW200914808A (en) 2009-04-01
CN101802541A (zh) 2010-08-11
KR20100049071A (ko) 2010-05-11
KR101151125B1 (ko) 2012-06-01

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