WO2009028492A1 - 光起電力素子 - Google Patents

光起電力素子 Download PDF

Info

Publication number
WO2009028492A1
WO2009028492A1 PCT/JP2008/065180 JP2008065180W WO2009028492A1 WO 2009028492 A1 WO2009028492 A1 WO 2009028492A1 JP 2008065180 W JP2008065180 W JP 2008065180W WO 2009028492 A1 WO2009028492 A1 WO 2009028492A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
layer
absorbing layer
migration layer
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065180
Other languages
English (en)
French (fr)
Inventor
Yasuhiko Takeda
Tadashi Ito
Tomoyoshi Motohiro
Tomonori Nagashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Priority to EP08792726A priority Critical patent/EP2184786A1/en
Priority to US12/675,695 priority patent/US20100258164A1/en
Priority to CN2008801048829A priority patent/CN101790793B/zh
Publication of WO2009028492A1 publication Critical patent/WO2009028492A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

　光吸収層におけるキャリアの滞在時間が短くても変換効率を効果的に高めることができるホットキャリア型の光起電力素子を提供する。光起電力素子は、光を吸収して電子および正孔を生成する光吸収層２と、光吸収層２の一方の面に隣接する電子移動層３と、光吸収層２の他方の面に隣接する正孔移動層４と、電子移動層３上に設けられた負電極５と、正孔移動層４上に設けられた正電極６とを備える。電子移動層３は、光吸収層２における伝導帯２ｃのエネルギー幅より狭いエネルギー幅を有しており所定のエネルギー準位Ｅｅの電子を選択的に通過させる伝導帯３ａを有する。正孔移動層４は、光吸収層２における価電子帯２ｄのエネルギー幅より狭いエネルギー幅を有しており所定のエネルギー準位Ｅｈの正孔を選択的に通過させる価電子帯４ａを有する。光吸収層２は、ｐ型不純物またはｎ型不純物を含む。
PCT/JP2008/065180 2007-08-31 2008-08-26 光起電力素子 Ceased WO2009028492A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08792726A EP2184786A1 (en) 2007-08-31 2008-08-26 Photovoltaic force device
US12/675,695 US20100258164A1 (en) 2007-08-31 2008-08-26 Photovoltaic force device
CN2008801048829A CN101790793B (zh) 2007-08-31 2008-08-26 光伏电力元件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007226277A JP4324214B2 (ja) 2007-08-31 2007-08-31 光起電力素子
JP2007-226277 2007-08-31

Publications (1)

Publication Number Publication Date
WO2009028492A1 true WO2009028492A1 (ja) 2009-03-05

Family

ID=40387211

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065180 Ceased WO2009028492A1 (ja) 2007-08-31 2008-08-26 光起電力素子

Country Status (6)

Country Link
US (1) US20100258164A1 (ja)
EP (1) EP2184786A1 (ja)
JP (1) JP4324214B2 (ja)
CN (1) CN101790793B (ja)
TW (1) TW200931671A (ja)
WO (1) WO2009028492A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011000055A1 (en) * 2009-07-03 2011-01-06 Newsouth Innovations Pty Limited Hot carrier energy conversion structure and method of fabricating the same
US9795542B2 (en) 2011-07-07 2017-10-24 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion device

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8217258B2 (en) 2010-07-09 2012-07-10 Ostendo Technologies, Inc. Alternating bias hot carrier solar cells
JP2012114378A (ja) 2010-11-26 2012-06-14 Imperial Innovetions Ltd 光電変換素子
JP5556639B2 (ja) * 2010-12-07 2014-07-23 株式会社豊田中央研究所 光電変換素子
JP5557721B2 (ja) * 2010-12-10 2014-07-23 株式会社日立製作所 太陽電池の製造方法
US20120318336A1 (en) * 2011-06-17 2012-12-20 International Business Machines Corporation Contact for silicon heterojunction solar cells
TWI493739B (zh) * 2013-06-05 2015-07-21 Univ Nat Taiwan 熱載子光電轉換裝置及其方法
US9431443B1 (en) 2015-05-28 2016-08-30 Semiconductor Components Industries, Llc Image sensor with heating effect and related methods
WO2017037693A1 (en) * 2015-09-01 2017-03-09 Technion Research & Development Foundation Limited Heterojunction photovoltaic device
JP2019507954A (ja) * 2016-03-11 2019-03-22 インヴィサージ テクノロジーズ インコーポレイテッド グローバル電子シャッタを提供する画像センサを含む、画像センサ
US10341571B2 (en) 2016-06-08 2019-07-02 Invisage Technologies, Inc. Image sensors with electronic shutter
JP2019110192A (ja) * 2017-12-18 2019-07-04 国立研究開発法人産業技術総合研究所 太陽電池
CN115101602B (zh) * 2021-03-03 2023-09-01 隆基绿能科技股份有限公司 一种太阳能电池及光伏组件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7049573B2 (en) * 2004-08-17 2006-05-23 Hewlett-Packard Development Company, L.P. Nonchanneled color capable photoelectronic effect image sensor and method
US8426722B2 (en) * 2006-10-24 2013-04-23 Zetta Research and Development LLC—AQT Series Semiconductor grain and oxide layer for photovoltaic cells
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
NEGES M. ET AL: "Monte Carlo simulation of energy loss and collection of hot charge carriers, first step towards a more realistic hot-carrier solar energy converter", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 90, no. 14, 6 September 2006 (2006-09-06), pages 2107 - 2128, XP008131339 *
WURFEL P. ET AL: "Partical conservation in the hot-carrier solar cell", PROGRESS IN PHOTOVOLTAICS, vol. 13, no. 4, June 2005 (2005-06-01), pages 277 - 285, XP008131478 *
WURFEL P.: "Solar energy conversion with hot electrons from impact ionisation", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 46, no. 1, 1 April 1997 (1997-04-01), pages 43 - 52, XP004115555 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011000055A1 (en) * 2009-07-03 2011-01-06 Newsouth Innovations Pty Limited Hot carrier energy conversion structure and method of fabricating the same
CN102549775A (zh) * 2009-07-03 2012-07-04 新南创新有限公司 热载流子能量转换结构及其制造方法
US9795542B2 (en) 2011-07-07 2017-10-24 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion device

Also Published As

Publication number Publication date
CN101790793B (zh) 2011-09-28
CN101790793A (zh) 2010-07-28
JP4324214B2 (ja) 2009-09-02
EP2184786A1 (en) 2010-05-12
JP2009059915A (ja) 2009-03-19
US20100258164A1 (en) 2010-10-14
TW200931671A (en) 2009-07-16

Similar Documents

Publication Publication Date Title
WO2009028492A1 (ja) 光起電力素子
TW200642116A (en) Avalanch photo diode
MY200704A (en) Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly
WO2010120233A3 (en) Multi-junction photovoltaic cell with nanowires
JP2011501419A5 (ja)
WO2010126572A3 (en) Bifacial solar cells with back surface reflector
WO2010126314A3 (ko) 탄소나노튜브층을 포함하는 실리콘 태양전지
WO2007059578A8 (en) High efficiency solar cell fabrication
WO2010048543A3 (en) Thin absorber layer of a photovoltaic device
WO2011072153A3 (en) High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers
CN102576764A (zh) 太阳能电池设备及其制造方法
KR100999797B1 (ko) 태양광 발전장치 및 이의 제조방법
WO2010104890A3 (en) Efficiency enhancement of solar cells using light management
JP2012522393A (ja) 太陽光発電装置及びその製造方法
CN105637651B (zh) 太阳能电池模块
WO2009008672A3 (en) Solar cell and method of manufacturing the same
TW200727504A (en) Solar cell element and method for fabricating same
JP2013537364A (ja) 太陽光発電装置及びその製造方法
CN104380478B (zh) 太阳能电池设备及制造太阳能电池设备的方法
CN103081124B (zh) 太阳能光伏装置及其生产方法
JP2001257374A5 (ja)
KR101628360B1 (ko) 태양전지 및 이의 제조방법
KR20080050862A (ko) 태양전지의 전극 형성방법, 태양전지의 제조방법 및태양전지
CN203071092U (zh) 太阳能电池
JP2014519720A5 (ja)

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880104882.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08792726

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2008792726

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12675695

Country of ref document: US