WO2009031304A1 - 固体撮像素子及びその製造方法 - Google Patents

固体撮像素子及びその製造方法 Download PDF

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Publication number
WO2009031304A1
WO2009031304A1 PCT/JP2008/002428 JP2008002428W WO2009031304A1 WO 2009031304 A1 WO2009031304 A1 WO 2009031304A1 JP 2008002428 W JP2008002428 W JP 2008002428W WO 2009031304 A1 WO2009031304 A1 WO 2009031304A1
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WO
WIPO (PCT)
Prior art keywords
center
photodiode
photoelectric
photoelectric charges
short
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002428
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English (en)
French (fr)
Inventor
Shigetoshi Sugawa
Yasushi Kondo
Hideki Tominaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Shimadzu Corp
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Tohoku University NUC
Shimadzu Corp
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Filing date
Publication date
Application filed by Tohoku University NUC, Shimadzu Corp filed Critical Tohoku University NUC
Priority to CN2008801056134A priority Critical patent/CN101796643B/zh
Priority to JP2009531126A priority patent/JP5115937B2/ja
Priority to KR1020107003064A priority patent/KR101105635B1/ko
Priority to EP08828900A priority patent/EP2192615A4/en
Priority to US12/676,520 priority patent/US8569805B2/en
Publication of WO2009031304A1 publication Critical patent/WO2009031304A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　埋め込み型のフォトダイオード（３１）の受光面の略中央にフローティングディフュージョン（３３１）を形成し、それを取り囲むように転送トランジスタ（３２）のゲート電極を配置する。フォトダイオード（３１）のｐ＋型半導体領域、ｎ型半導体領域又はｐ型ウエル領域の不純物濃度（又は深さ）を周辺部から中央に向かって傾斜状に変化させることで、ｐｎ接合に適宜のバイアス電圧を印加したときに周辺から中央に向かって下傾するポテンシャル勾配が形成されるようにする。受光により発生した光電荷はポテンシャル勾配に従って迅速に中央に集積される。またフォトダイオード（３１）の周辺からフローティングディフュージョン（３３１）までの最大移動距離も短いので、光電荷蓄積時間が短い場合でも効率良く光電荷を収集することができる。このようにして、フォトダイオード（３１）で生起された光電荷を効率良く利用することで、検出感度が向上する。
PCT/JP2008/002428 2007-09-05 2008-09-04 固体撮像素子及びその製造方法 Ceased WO2009031304A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2008801056134A CN101796643B (zh) 2007-09-05 2008-09-04 固体摄像元件及其制造方法
JP2009531126A JP5115937B2 (ja) 2007-09-05 2008-09-04 固体撮像素子及びその製造方法
KR1020107003064A KR101105635B1 (ko) 2007-09-05 2008-09-04 고체촬상소자 및 그 제조방법
EP08828900A EP2192615A4 (en) 2007-09-05 2008-09-04 SOLID-BODY IMAGING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
US12/676,520 US8569805B2 (en) 2007-09-05 2008-09-04 Solid-state image sensor and method for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-230181 2007-09-05
JP2007230181 2007-09-05

Publications (1)

Publication Number Publication Date
WO2009031304A1 true WO2009031304A1 (ja) 2009-03-12

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PCT/JP2008/002428 Ceased WO2009031304A1 (ja) 2007-09-05 2008-09-04 固体撮像素子及びその製造方法

Country Status (7)

Country Link
US (1) US8569805B2 (ja)
EP (1) EP2192615A4 (ja)
JP (1) JP5115937B2 (ja)
KR (1) KR101105635B1 (ja)
CN (1) CN101796643B (ja)
TW (1) TW200921907A (ja)
WO (1) WO2009031304A1 (ja)

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WO2011004708A1 (ja) 2009-07-10 2011-01-13 株式会社島津製作所 固体撮像素子
KR20110023763A (ko) * 2009-08-28 2011-03-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자기기
EP2416555A4 (en) * 2009-03-30 2014-09-10 Hamamatsu Photonics Kk SOLID STATE IMAGE CRADLE
BE1021245B1 (nl) * 2010-04-29 2015-09-22 Bart Dierickx Pixel met beperkte 1/f ruis
JPWO2020039531A1 (ja) * 2018-08-23 2021-08-26 国立大学法人東北大学 光センサ及びその信号読み出し方法並びに光エリアセンサ及びその信号読み出し方法
JP2021150846A (ja) * 2020-03-19 2021-09-27 株式会社東芝 固体撮像装置
WO2024180957A1 (ja) * 2023-03-02 2024-09-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
WO2025141973A1 (ja) * 2023-12-26 2025-07-03 浜松ホトニクス株式会社 イメージセンサ

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JP5751766B2 (ja) 2010-07-07 2015-07-22 キヤノン株式会社 固体撮像装置および撮像システム
JP5643555B2 (ja) 2010-07-07 2014-12-17 キヤノン株式会社 固体撮像装置及び撮像システム
JP5885401B2 (ja) 2010-07-07 2016-03-15 キヤノン株式会社 固体撮像装置および撮像システム
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JP6141160B2 (ja) * 2013-09-25 2017-06-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその動作方法、並びに電子機器およびその動作方法
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CN110463190B (zh) * 2017-03-30 2022-01-11 株式会社尼康 摄像元件、焦点调节装置及摄像装置
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JP7005459B2 (ja) * 2018-09-13 2022-01-21 株式会社東芝 固体撮像素子
KR102789680B1 (ko) 2019-06-25 2025-04-01 에스케이하이닉스 주식회사 이미지 센서
KR102709669B1 (ko) 2019-07-01 2024-09-26 에스케이하이닉스 주식회사 픽셀 및 이를 포함하는 이미지 센서
KR102668562B1 (ko) 2019-07-24 2024-05-24 에스케이하이닉스 주식회사 메모리 시스템 및 그것의 동작 방법
CN110676279A (zh) * 2019-10-10 2020-01-10 中国电子科技集团公司第四十四研究所 一种高量子效率ccd结构
US20230027464A1 (en) * 2019-12-26 2023-01-26 Hamamatsu Photonics K.K. Distance measurement device, and method for driving distance measurement sensor
KR102930839B1 (ko) * 2020-03-11 2026-02-26 에스케이하이닉스 주식회사 이미지 센서

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Cited By (13)

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Publication number Priority date Publication date Assignee Title
EP2416555A4 (en) * 2009-03-30 2014-09-10 Hamamatsu Photonics Kk SOLID STATE IMAGE CRADLE
US8530947B2 (en) 2009-07-10 2013-09-10 Shimadzu Corporation Solid-state image sensor
WO2011004708A1 (ja) 2009-07-10 2011-01-13 株式会社島津製作所 固体撮像素子
KR101683296B1 (ko) 2009-08-28 2016-12-20 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치와 그 제조 방법, 및 전자기기
JP2011049446A (ja) * 2009-08-28 2011-03-10 Sony Corp 固体撮像装置とその製造方法、及び電子機器
KR20110023763A (ko) * 2009-08-28 2011-03-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자기기
BE1021245B1 (nl) * 2010-04-29 2015-09-22 Bart Dierickx Pixel met beperkte 1/f ruis
JPWO2020039531A1 (ja) * 2018-08-23 2021-08-26 国立大学法人東北大学 光センサ及びその信号読み出し方法並びに光エリアセンサ及びその信号読み出し方法
JP7333562B2 (ja) 2018-08-23 2023-08-25 国立大学法人東北大学 光センサ及びその信号読み出し方法並びに光エリアセンサ及びその信号読み出し方法
JP2021150846A (ja) * 2020-03-19 2021-09-27 株式会社東芝 固体撮像装置
JP7330124B2 (ja) 2020-03-19 2023-08-21 株式会社東芝 固体撮像装置
WO2024180957A1 (ja) * 2023-03-02 2024-09-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
WO2025141973A1 (ja) * 2023-12-26 2025-07-03 浜松ホトニクス株式会社 イメージセンサ

Also Published As

Publication number Publication date
CN101796643B (zh) 2013-04-10
KR101105635B1 (ko) 2012-01-18
KR20100039885A (ko) 2010-04-16
EP2192615A1 (en) 2010-06-02
JP5115937B2 (ja) 2013-01-09
EP2192615A4 (en) 2011-07-27
CN101796643A (zh) 2010-08-04
US20100176423A1 (en) 2010-07-15
JPWO2009031304A1 (ja) 2010-12-09
TW200921907A (en) 2009-05-16
US8569805B2 (en) 2013-10-29

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