WO2009031365A1 - シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法 - Google Patents

シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法 Download PDF

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Publication number
WO2009031365A1
WO2009031365A1 PCT/JP2008/062899 JP2008062899W WO2009031365A1 WO 2009031365 A1 WO2009031365 A1 WO 2009031365A1 JP 2008062899 W JP2008062899 W JP 2008062899W WO 2009031365 A1 WO2009031365 A1 WO 2009031365A1
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WIPO (PCT)
Prior art keywords
silicon single
crystal
seed crystal
single crystal
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062899
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English (en)
French (fr)
Inventor
Nobumitsu Takase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
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Sumco Corp
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Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to CN200880105838XA priority Critical patent/CN101796225B/zh
Priority to US12/676,634 priority patent/US20100242832A1/en
Priority to EP08778241.3A priority patent/EP2186929A4/en
Publication of WO2009031365A1 publication Critical patent/WO2009031365A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　シリコン融液への接触時に発生する熱衝撃によるスリップ転位の発生を低減させ、かつ、このスリップ転位の伝播を抑制し、ネック部の直径が従来よりも太い径でも無転位化が可能な、シリコン単結晶引上げ用種結晶を提供する。 　本発明のシリコン単結晶引上げ用種結晶は、ＣＺ法によるシリコン単結晶の引上げに使用される種結晶の改良であり、その特徴ある構成は、種結晶が炭素のドープされたシリコン融液から引上げられたシリコン単結晶から切り出されたものであって、ドープされている炭素の濃度が５×１０15～５×１０17ａｔｏｍｓ／ｃｍ3の割合であるところにある。
PCT/JP2008/062899 2007-09-07 2008-07-17 シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法 Ceased WO2009031365A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880105838XA CN101796225B (zh) 2007-09-07 2008-07-17 硅单晶提拉用晶种以及使用该晶种的硅单晶的制造方法
US12/676,634 US20100242832A1 (en) 2007-09-07 2008-07-17 Seed crystal for pulling silicon single crystal and method for manufacturing silicon single crystal by using the seed crystal
EP08778241.3A EP2186929A4 (en) 2007-09-07 2008-07-17 CRYSTALLINE GERM FOR DRAWING SILICON MONOCRYSTAL AND PROCESS FOR MANUFACTURING THE SAME USING CRYSTALLINE GERM

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007232233A JP5239265B2 (ja) 2007-09-07 2007-09-07 シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法
JP2007-232233 2007-09-07

Publications (1)

Publication Number Publication Date
WO2009031365A1 true WO2009031365A1 (ja) 2009-03-12

Family

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PCT/JP2008/062899 Ceased WO2009031365A1 (ja) 2007-09-07 2008-07-17 シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法

Country Status (7)

Country Link
US (1) US20100242832A1 (ja)
EP (1) EP2186929A4 (ja)
JP (1) JP5239265B2 (ja)
KR (1) KR101215433B1 (ja)
CN (1) CN101796225B (ja)
TW (1) TWI395840B (ja)
WO (1) WO2009031365A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5302556B2 (ja) 2008-03-11 2013-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置及びシリコン単結晶の製造方法
CN103205800B (zh) * 2012-01-17 2016-04-27 江苏协鑫硅材料科技发展有限公司 提高铸造单晶硅铸锭成品率和转换效率的方法
JP5861770B2 (ja) * 2012-03-26 2016-02-16 株式会社Sumco 多結晶シリコンおよびその鋳造方法
JP6592941B2 (ja) * 2015-04-09 2019-10-23 株式会社Ｓｕｍｃｏ 単結晶引き上げ用種結晶保持具及びこれを用いたシリコン単結晶の製造方法
CN105568364A (zh) * 2015-12-30 2016-05-11 佛山市业丰赛尔陶瓷科技有限公司 提高铸造单晶硅铸锭成品率和/或转换效率的方法
CN112140374B (zh) * 2019-06-29 2022-08-12 洛阳阿特斯光伏科技有限公司 一种多晶硅棒的切割方法
JP6741179B1 (ja) 2020-02-18 2020-08-19 信越半導体株式会社 シリコン単結晶の製造方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH04139092A (ja) 1990-09-28 1992-05-13 Fujitsu Ltd シリコン単結晶の製造方法と種結晶
JP2000128691A (ja) * 1998-10-16 2000-05-09 Shin Etsu Handotai Co Ltd シリコン種結晶およびシリコン単結晶の製造方法
JP2005272240A (ja) 2004-03-25 2005-10-06 Toshiba Ceramics Co Ltd シリコン単結晶引上用種結晶およびこれを用いたシリコン単結晶の製造方法

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US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JP3235450B2 (ja) * 1996-03-13 2001-12-04 住友金属工業株式会社 単結晶引き上げ用シリコン種結晶及び該シリコン種結晶を用いた単結晶引き上げ方法
US6517632B2 (en) * 2000-01-17 2003-02-11 Toshiba Ceramics Co., Ltd. Method of fabricating a single crystal ingot and method of fabricating a silicon wafer
JP2002208596A (ja) * 2001-01-09 2002-07-26 Toshiba Ceramics Co Ltd シリコン単結晶ウエハ
US6866713B2 (en) * 2001-10-26 2005-03-15 Memc Electronic Materials, Inc. Seed crystals for pulling single crystal silicon
JP4970724B2 (ja) * 2002-07-17 2012-07-11 株式会社Ｓｕｍｃｏ 高抵抗シリコンウエーハの製造方法
JP4215249B2 (ja) * 2003-08-21 2009-01-28 コバレントマテリアル株式会社 シリコン種結晶およびシリコン単結晶の製造方法
US7396406B2 (en) * 2004-02-09 2008-07-08 Sumco Techxiv Corporation Single crystal semiconductor manufacturing apparatus and method
JP2007223814A (ja) * 2004-02-09 2007-09-06 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶半導体の製造方法
JP4507690B2 (ja) * 2004-05-10 2010-07-21 信越半導体株式会社 シリコン単結晶の製造方法及びシリコン単結晶
DE102005006186A1 (de) * 2005-02-10 2006-08-24 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt
JP4604889B2 (ja) * 2005-05-25 2011-01-05 株式会社Sumco シリコンウェーハの製造方法、並びにシリコン単結晶育成方法
KR101400068B1 (ko) * 2006-01-20 2014-05-28 에이엠지 아이디얼캐스트 솔라 코포레이션 광전 변환 소자용 기하학적 다결정 캐스트 실리콘 및 기하학적 다결정 캐스트 실리콘 바디들을 제조하는 방법 및장치
US20100089308A1 (en) * 2008-10-15 2010-04-15 Japan Super Quartz Corporation Silica glass crucible and method for pulling single-crystal silicon
US8163083B2 (en) * 2008-07-09 2012-04-24 Japan Super Quartz Corporation Silica glass crucible and method for pulling up silicon single crystal using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04139092A (ja) 1990-09-28 1992-05-13 Fujitsu Ltd シリコン単結晶の製造方法と種結晶
JP2000128691A (ja) * 1998-10-16 2000-05-09 Shin Etsu Handotai Co Ltd シリコン種結晶およびシリコン単結晶の製造方法
JP2005272240A (ja) 2004-03-25 2005-10-06 Toshiba Ceramics Co Ltd シリコン単結晶引上用種結晶およびこれを用いたシリコン単結晶の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2186929A4 *

Also Published As

Publication number Publication date
US20100242832A1 (en) 2010-09-30
EP2186929A4 (en) 2015-03-04
TW200914651A (en) 2009-04-01
JP5239265B2 (ja) 2013-07-17
TWI395840B (zh) 2013-05-11
KR101215433B1 (ko) 2012-12-26
CN101796225A (zh) 2010-08-04
EP2186929A1 (en) 2010-05-19
KR20100039447A (ko) 2010-04-15
CN101796225B (zh) 2013-10-30
JP2009062233A (ja) 2009-03-26

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