WO2009031581A1 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
WO2009031581A1
WO2009031581A1 PCT/JP2008/065869 JP2008065869W WO2009031581A1 WO 2009031581 A1 WO2009031581 A1 WO 2009031581A1 JP 2008065869 W JP2008065869 W JP 2008065869W WO 2009031581 A1 WO2009031581 A1 WO 2009031581A1
Authority
WO
WIPO (PCT)
Prior art keywords
control signal
initialization
period
imaging device
closed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065869
Other languages
English (en)
French (fr)
Inventor
Kazuki Fujita
Ryuji Kyushima
Harumichi Mori
Masahiko Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to KR1020107000275A priority Critical patent/KR101428135B1/ko
Priority to US12/675,824 priority patent/US8159576B2/en
Priority to EP08829255.2A priority patent/EP2190184B1/en
Priority to CN200880105420.9A priority patent/CN101796819B/zh
Publication of WO2009031581A1 publication Critical patent/WO2009031581A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

　固体撮像装置１は、Ｍ×Ｎ個の画素部Ｐ１，１～ＰＭ，ＮがＭ行Ｎ列に２次元配列された受光部と、積分回路Ｓ１～ＳＮおよび保持回路Ｈ１～ＨＮを含む信号読出部と、初期化用スイッチＳＷＩ，１～ＳＷＩ，Ｎを含む初期化部とを備える。放電制御信号Ｒｅｓｅｔにより、各積分回路Ｓｎの放電用スイッチＳＷ２を一旦閉じた後に開き、その後に、第ｍ行選択制御信号Ｖｓｅｌ（ｍ）により、第ｍ行の各画素部Ｐｍ，ｎの読出用スイッチＳＷ１を第１期間に亘り閉じる。その第１期間内に、保持制御信号Ｈｏｌｄにより、各保持回路Ｈｎの入力用スイッチＳＷ３１を閉状態から開状態に転じ、その後に、初期化制御信号Ｉｎｉｔにより、各初期化用スイッチＳＷＩ，ｎを第２期間に亘り閉じる。
PCT/JP2008/065869 2007-09-04 2008-09-03 固体撮像装置 Ceased WO2009031581A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020107000275A KR101428135B1 (ko) 2007-09-04 2008-09-03 고체 촬상 장치
US12/675,824 US8159576B2 (en) 2007-09-04 2008-09-03 Solid state imaging device
EP08829255.2A EP2190184B1 (en) 2007-09-04 2008-09-03 Solid state imaging device
CN200880105420.9A CN101796819B (zh) 2007-09-04 2008-09-03 固体摄像装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-229218 2007-09-04
JP2007229218A JP4912989B2 (ja) 2007-09-04 2007-09-04 固体撮像装置

Publications (1)

Publication Number Publication Date
WO2009031581A1 true WO2009031581A1 (ja) 2009-03-12

Family

ID=40428895

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065869 Ceased WO2009031581A1 (ja) 2007-09-04 2008-09-03 固体撮像装置

Country Status (7)

Country Link
US (1) US8159576B2 (ja)
EP (1) EP2190184B1 (ja)
JP (1) JP4912989B2 (ja)
KR (1) KR101428135B1 (ja)
CN (1) CN101796819B (ja)
TW (1) TWI451757B (ja)
WO (1) WO2009031581A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010249621A (ja) * 2009-04-15 2010-11-04 Shimadzu Corp ２次元画像検出装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4927669B2 (ja) * 2007-09-05 2012-05-09 浜松ホトニクス株式会社 固体撮像装置
JP5091695B2 (ja) * 2008-01-24 2012-12-05 浜松ホトニクス株式会社 固体撮像装置
JP4972569B2 (ja) * 2008-01-24 2012-07-11 浜松ホトニクス株式会社 固体撮像装置
JP5155759B2 (ja) * 2008-07-17 2013-03-06 浜松ホトニクス株式会社 固体撮像装置
KR101916485B1 (ko) * 2011-01-17 2018-11-07 하마마츠 포토닉스 가부시키가이샤 고체 촬상 장치
KR101869277B1 (ko) * 2011-11-17 2018-06-22 삼성전자주식회사 화소 회로 및 이를 포함하는 깊이 센서
JP6317622B2 (ja) * 2014-05-13 2018-04-25 浜松ホトニクス株式会社 固体撮像装置
DE102015213911B4 (de) * 2015-07-23 2019-03-07 Siemens Healthcare Gmbh Verfahren zum Erzeugen eines Röntgenbildes und Datenverarbeitungseinrichtung zum Ausführen des Verfahrens
JP7383500B2 (ja) * 2020-01-16 2023-11-20 浜松ホトニクス株式会社 固体撮像装置およびアンプアレイ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120970A (ja) * 1987-11-05 1989-05-12 Mitsubishi Electric Corp 固体撮像素子
JPH04180374A (ja) * 1990-11-14 1992-06-26 Mitsubishi Electric Corp 固体撮像素子
JP2000046645A (ja) * 1998-07-31 2000-02-18 Canon Inc 光電変換装置及びその製造方法及びｘ線撮像装置
JP2003224776A (ja) 2002-01-29 2003-08-08 Canon Inc 固体撮像装置、カメラ及び情報処理装置
JP2006234557A (ja) 2005-02-24 2006-09-07 Shimadzu Corp Ｘ線画像補正方法およびｘ線検査装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809767B1 (en) * 1999-03-16 2004-10-26 Kozlowski Lester J Low-noise CMOS active pixel sensor for imaging arrays with high speed global or row reset
JP2001251557A (ja) 1999-12-27 2001-09-14 Canon Inc エリアセンサ、該エリアセンサを有する画像入力装置および該エリアセンサの駆動方法
FR2818920B1 (fr) 2000-12-29 2003-09-26 Air Liquide Procede de traitement d'un gaz par absorption et installation correspondante
JP2003296722A (ja) * 2002-04-05 2003-10-17 Canon Inc 撮像装置及びその撮像方法
JP3788393B2 (ja) * 2002-06-10 2006-06-21 ソニー株式会社 デジタルスチルカメラ装置、ビデオカメラ装置及び情報端末装置
US7015844B1 (en) * 2004-08-30 2006-03-21 Micron Technology, Inc. Minimized SAR-type column-wide ADC for image sensors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120970A (ja) * 1987-11-05 1989-05-12 Mitsubishi Electric Corp 固体撮像素子
JPH04180374A (ja) * 1990-11-14 1992-06-26 Mitsubishi Electric Corp 固体撮像素子
JP2000046645A (ja) * 1998-07-31 2000-02-18 Canon Inc 光電変換装置及びその製造方法及びｘ線撮像装置
JP2003224776A (ja) 2002-01-29 2003-08-08 Canon Inc 固体撮像装置、カメラ及び情報処理装置
JP2006234557A (ja) 2005-02-24 2006-09-07 Shimadzu Corp Ｘ線画像補正方法およびｘ線検査装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2190184A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010249621A (ja) * 2009-04-15 2010-11-04 Shimadzu Corp ２次元画像検出装置

Also Published As

Publication number Publication date
TWI451757B (zh) 2014-09-01
EP2190184A4 (en) 2013-05-01
KR101428135B1 (ko) 2014-08-07
US20100245646A1 (en) 2010-09-30
US8159576B2 (en) 2012-04-17
EP2190184B1 (en) 2014-04-30
JP4912989B2 (ja) 2012-04-11
EP2190184A1 (en) 2010-05-26
CN101796819A (zh) 2010-08-04
CN101796819B (zh) 2012-04-25
JP2009065272A (ja) 2009-03-26
KR20100049534A (ko) 2010-05-12
TW200931959A (en) 2009-07-16

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