WO2009036728A1 - Composant semi-conducteur émetteur de rayonnement présentant une direction d'émission verticale et procédé de fabrication d'un composant semi-conducteur émetteur de rayonnement - Google Patents

Composant semi-conducteur émetteur de rayonnement présentant une direction d'émission verticale et procédé de fabrication d'un composant semi-conducteur émetteur de rayonnement Download PDF

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Publication number
WO2009036728A1
WO2009036728A1 PCT/DE2008/001425 DE2008001425W WO2009036728A1 WO 2009036728 A1 WO2009036728 A1 WO 2009036728A1 DE 2008001425 W DE2008001425 W DE 2008001425W WO 2009036728 A1 WO2009036728 A1 WO 2009036728A1
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WO
WIPO (PCT)
Prior art keywords
radiation
coupling structure
region
pump
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/001425
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German (de)
English (en)
Inventor
Peter Brick
Christopher Wiesmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2009036728A1 publication Critical patent/WO2009036728A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs

Definitions

  • a period length L of the periodic or quasi-periodic coupling structure ie the length after which the basic structure of the coupling structure repeats, the following preferably applies:
  • the recesses are at least partially filled with a filling material.
  • the filler material expediently has a refractive index which is different from the refractive index of the semiconductor body. Further preferably, the filler material is permeable to the pump radiation.
  • the mirror for the pump radiation to a lower reflectivity than for the
  • a radiation-emitting semiconductor device with a vertical emission direction which already comprises a pump radiation source, can be produced in a simplified manner.
  • FIG. 3 shows a third exemplary embodiment of a radiation-emitting semiconductor component in a schematic sectional view
  • the pump radiation coupled into the emission region preferably predominantly extends at an angle of at most 20 ° to the vertical direction.
  • the radiation generated in the emission region 4 during operation of the semiconductor component can be efficiently reflected at the mirror 5.
  • An entry of the emission radiation into the pumping area and subsequently an impact on the coupling structure 7 can thus be avoided.
  • the proportion of the pump radiation coupled into the emission region 4 is the higher the lower the reflectivity of the mirror for the pump radiation.
  • the mirror 5 is designed as a Bragg mirror with 30 semiconductor layer pairs.
  • the semiconductor layer pairs each comprise an AlAs semiconductor layer 51 having a thickness of 88 nm and a GaAs semiconductor layer 52 having a thickness of 75 nm.
  • the coupling structure may also be designed in such a way that it deflects the pump radiation mainly due to reflection at the coupling structure.
  • the coupling structure preferably at an angle to vertical side faces.
  • the coupling structure does not necessarily have to be periodically formed.
  • a periodic structure such as a sawtooth structure whose period length is considerably greater than the wavelength of the pump radiation, about at least five times as large, may be suitable here.
  • FIG. 6 shows a simulation of the course of the intensity I of the deflected pump radiation as a course along the lateral direction x.
  • the intensity in arbitrary units in both directions over a range of more than 45 .mu.m is an intensity which is between a value of 0.2 and a value of 0.35 runs.
  • a comparatively uniform coupling of the pump radiation into the emission region takes place.
  • Optical pumping of the emission range is thereby simplified.
  • the semiconductor layer sequence which forms the semiconductor body 2 is first deposited on a growth substrate 21. This is preferably carried out epitaxially, for example by means of MBE or MOVPE.
  • the semiconductor layer sequence here comprises the pump region 3 and the emission region 4 as well as the mirror 5 arranged between the pump region 3 and the emission region 4.
  • the pump region, the emission region and the mirror are thus monolithically integrated into a common semiconductor body 2.
  • the production can take place in a common epitaxy step.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne un composant semi-conducteur émetteur de rayonnement (1) qui présente une direction d'émission verticale. Le composant comprend un corps semi-conducteur (2) qui présente une succession de couches semi-conductrices. Une région de pompage (3) conçue pour produire un rayonnement de pompage se trouve dans cette succession de couches semi-conductrices. Une région d'émission (4) conçue pour produire un rayonnement d'émission se trouve sur la région de pompage (3). Une structure de couplage (7) est formée dans le composant semi-conducteur. La présente invention concerne également un procédé de fabrication d'un composant semi-conducteur émetteur de rayonnement (1).
PCT/DE2008/001425 2007-09-21 2008-08-26 Composant semi-conducteur émetteur de rayonnement présentant une direction d'émission verticale et procédé de fabrication d'un composant semi-conducteur émetteur de rayonnement Ceased WO2009036728A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007045306 2007-09-21
DE102007045306.1 2007-09-21
DE102007061481.2 2007-12-20
DE102007061481A DE102007061481A1 (de) 2007-09-21 2007-12-20 Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements

Publications (1)

Publication Number Publication Date
WO2009036728A1 true WO2009036728A1 (fr) 2009-03-26

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PCT/DE2008/001425 Ceased WO2009036728A1 (fr) 2007-09-21 2008-08-26 Composant semi-conducteur émetteur de rayonnement présentant une direction d'émission verticale et procédé de fabrication d'un composant semi-conducteur émetteur de rayonnement

Country Status (3)

Country Link
DE (1) DE102007061481A1 (fr)
TW (1) TW200917601A (fr)
WO (1) WO2009036728A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113774A1 (fr) * 2009-04-02 2010-10-07 Canon Kabushiki Kaisha Laser à émission par la surface doté d'un guide d'ondes à cristal photonique et d'un couplage par une couche de placage discontinue
EP2337168B1 (fr) * 2009-12-17 2019-12-25 Forschungsverbund Berlin e.V. Laser à émission par la surface et à deux cavités

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6330265B1 (en) * 1998-04-21 2001-12-11 Kabushiki Kaisha Toshiba Optical functional element and transmission device
US6556610B1 (en) * 2001-04-12 2003-04-29 E20 Communications, Inc. Semiconductor lasers
US20040165637A1 (en) * 2002-03-22 2004-08-26 Bullington Jeff A. Laser-to-fiber coupling
WO2005109584A2 (fr) * 2004-05-04 2005-11-17 Commissariat A L'energie Atomique Emetteur de rayonnement avec faisceau de pompage incline

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6424669B1 (en) * 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
JP4829119B2 (ja) * 2003-11-13 2011-12-07 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 側方に取り付けられたエッジ発光体を有するモノリシック光学的ポンピングｖｃｓｅｌ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6330265B1 (en) * 1998-04-21 2001-12-11 Kabushiki Kaisha Toshiba Optical functional element and transmission device
US6556610B1 (en) * 2001-04-12 2003-04-29 E20 Communications, Inc. Semiconductor lasers
US20040165637A1 (en) * 2002-03-22 2004-08-26 Bullington Jeff A. Laser-to-fiber coupling
WO2005109584A2 (fr) * 2004-05-04 2005-11-17 Commissariat A L'energie Atomique Emetteur de rayonnement avec faisceau de pompage incline

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KENICHI IGA: "SURFACE-EMITTING SEMICONDUCTOR LASERS AND SURFACE-OPERATING FUNCTIONAL DEVICES", ELECTRONICS & COMMUNICATIONS IN JAPAN, PART II - ELECTRONICS, WILEY, HOBOKEN, NJ, US, vol. 75, no. 10, 1 October 1992 (1992-10-01), pages 12 - 26, XP000368571, ISSN: 8756-663X *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113774A1 (fr) * 2009-04-02 2010-10-07 Canon Kabushiki Kaisha Laser à émission par la surface doté d'un guide d'ondes à cristal photonique et d'un couplage par une couche de placage discontinue
US8265114B2 (en) 2009-04-02 2012-09-11 Canon Kabushiki Kaisha Surface emitting laser
EP2337168B1 (fr) * 2009-12-17 2019-12-25 Forschungsverbund Berlin e.V. Laser à émission par la surface et à deux cavités

Also Published As

Publication number Publication date
DE102007061481A1 (de) 2009-04-02
TW200917601A (en) 2009-04-16

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