WO2009041560A1 - プラズマエッチング方法 - Google Patents

プラズマエッチング方法 Download PDF

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Publication number
WO2009041560A1
WO2009041560A1 PCT/JP2008/067398 JP2008067398W WO2009041560A1 WO 2009041560 A1 WO2009041560 A1 WO 2009041560A1 JP 2008067398 W JP2008067398 W JP 2008067398W WO 2009041560 A1 WO2009041560 A1 WO 2009041560A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma etching
processing gas
integer
etching method
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067398
Other languages
English (en)
French (fr)
Inventor
Takefumi Suzuki
Tatsuya Sugimoto
Masahiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zeon Corp
Original Assignee
Zeon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeon Corp filed Critical Zeon Corp
Priority to KR1020107006774A priority Critical patent/KR101442308B1/ko
Priority to JP2009534397A priority patent/JP5440170B2/ja
Priority to EP08834441A priority patent/EP2194569A4/en
Priority to US12/733,828 priority patent/US8535551B2/en
Publication of WO2009041560A1 publication Critical patent/WO2009041560A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

　本発明は、シリコン酸化膜を、マスクを介して、処理ガスを用いてプラズマエッチングするプラズマエッチング方法であって、前記処理ガスが、酸素ガス、および、式（１）：ＣｘＨｙＦｚ〔式中、ｘは４～６のいずれかの整数を表し、ｙは１～４のいずれかの整数を表し、ｚは正の整数を表し、かつ、（ｙ＋ｚ）は２ｘ以下である。〕で表されるフッ素化炭化水素を含むことを特徴とするプラズマエッチング方法である。本発明によれば、シリコン酸化膜に、単一の処理ガスを用いてプラズマエッチングすることにより、微細径、高アスペクト比のコンタクトホールを、略垂直でネッキングのない、良好な形状で形成することができる。
PCT/JP2008/067398 2007-09-28 2008-09-26 プラズマエッチング方法 Ceased WO2009041560A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020107006774A KR101442308B1 (ko) 2007-09-28 2008-09-26 플라즈마 에칭 방법
JP2009534397A JP5440170B2 (ja) 2007-09-28 2008-09-26 プラズマエッチング方法
EP08834441A EP2194569A4 (en) 2007-09-28 2008-09-26 plasma etching
US12/733,828 US8535551B2 (en) 2007-09-28 2008-09-26 Plasma etching method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007255199 2007-09-28
JP2007-255199 2007-09-28

Publications (1)

Publication Number Publication Date
WO2009041560A1 true WO2009041560A1 (ja) 2009-04-02

Family

ID=40511440

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067398 Ceased WO2009041560A1 (ja) 2007-09-28 2008-09-26 プラズマエッチング方法

Country Status (6)

Country Link
US (1) US8535551B2 (ja)
EP (1) EP2194569A4 (ja)
JP (1) JP5440170B2 (ja)
KR (1) KR101442308B1 (ja)
TW (1) TWI438841B (ja)
WO (1) WO2009041560A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206444A (ja) * 2008-02-29 2009-09-10 Nippon Zeon Co Ltd プラズマエッチング方法
WO2014129488A1 (ja) 2013-02-21 2014-08-28 日本ゼオン株式会社 高純度１ｈ－ヘプタフルオロシクロペンテン
JP2015195381A (ja) * 2010-02-01 2015-11-05 セントラル硝子株式会社 ドライエッチング方法
JP2015533029A (ja) * 2012-10-30 2015-11-16 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 高アスペクト比酸化物エッチング用のフルオロカーボン分子
US9368363B2 (en) 2011-03-17 2016-06-14 Zeon Corporation Etching gas and etching method
JPWO2022080271A1 (ja) * 2020-10-15 2022-04-21
JPWO2022080267A1 (ja) * 2020-10-15 2022-04-21
JPWO2022080268A1 (ja) * 2020-10-15 2022-04-21

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013030531A (ja) * 2011-07-27 2013-02-07 Central Glass Co Ltd ドライエッチング剤
JP2014007306A (ja) * 2012-06-25 2014-01-16 Toshiba Corp パターン形成方法
TWI642809B (zh) * 2013-09-09 2018-12-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用蝕刻氣體蝕刻半導體結構的方法
CN106103535B (zh) 2014-03-14 2019-04-23 日本瑞翁株式会社 四环十二碳烯系开环聚合物氢化物及其制造方法
US9252051B1 (en) 2014-11-13 2016-02-02 International Business Machines Corporation Method for top oxide rounding with protection of patterned features
KR102340870B1 (ko) 2016-03-16 2021-12-16 니폰 제온 가부시키가이샤 플라즈마 에칭 방법
KR102328590B1 (ko) 2019-09-16 2021-11-17 아주대학교산학협력단 플라즈마 식각 방법
KR102924126B1 (ko) * 2020-10-15 2026-02-06 가부시끼가이샤 레조낙 플루오로-2-부텐의 보관 방법
IL302119A (en) * 2020-10-15 2023-06-01 Resonac Corp STORAGE METHOD FOR FLUORO-2-BUTENE
JPWO2022080272A1 (ja) * 2020-10-15 2022-04-21
US20230373889A1 (en) * 2020-10-15 2023-11-23 Resonac Corporation Method for storing fluoro-2-butene
KR102924118B1 (ko) * 2020-10-15 2026-02-09 가부시끼가이샤 레조낙 플루오로부텐의 보관 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147273A (ja) * 1993-11-24 1995-06-06 Tokyo Electron Ltd エッチング処理方法
JPH09148314A (ja) * 1995-09-01 1997-06-06 Applied Materials Inc ケイ化チタンのエッチングプロセス
JP2006278436A (ja) 2005-03-28 2006-10-12 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置、制御プログラム、コンピュータ記録媒体及び処理レシピが記録された記録媒体

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
KR100510158B1 (ko) * 1996-10-30 2005-08-25 고교기쥬쯔잉초가다이효스루니혼고쿠 드라이 에칭용 가스 조성물 및 드라이 에칭 방법
KR100338769B1 (ko) * 1999-10-26 2002-05-30 윤종용 반도체 장치의 절연막 식각방법
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
JP4164643B2 (ja) * 2002-07-17 2008-10-15 日本ゼオン株式会社 ドライエッチング方法及びパーフルオロ−２−ペンチンの製造方法
US6969568B2 (en) * 2004-01-28 2005-11-29 Freescale Semiconductor, Inc. Method for etching a quartz layer in a photoresistless semiconductor mask
US7351665B2 (en) * 2005-03-28 2008-04-01 Tokyo Electron Limited Plasma etching method, plasma etching apparatus, control program, computer recording medium and recording medium having processing recipe recorded thereon

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147273A (ja) * 1993-11-24 1995-06-06 Tokyo Electron Ltd エッチング処理方法
JPH09148314A (ja) * 1995-09-01 1997-06-06 Applied Materials Inc ケイ化チタンのエッチングプロセス
JP2006278436A (ja) 2005-03-28 2006-10-12 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置、制御プログラム、コンピュータ記録媒体及び処理レシピが記録された記録媒体

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF FLUORINE CHEMISTRY, vol. 123, 2003, pages 227
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 86, 1964, pages 5361
See also references of EP2194569A4

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206444A (ja) * 2008-02-29 2009-09-10 Nippon Zeon Co Ltd プラズマエッチング方法
JP2015195381A (ja) * 2010-02-01 2015-11-05 セントラル硝子株式会社 ドライエッチング方法
US9368363B2 (en) 2011-03-17 2016-06-14 Zeon Corporation Etching gas and etching method
JP2018050074A (ja) * 2012-10-30 2018-03-29 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード エッチング耐性ポリマー層を堆積させる方法及びパターンエッチング構造の製造方法
JP2015533029A (ja) * 2012-10-30 2015-11-16 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 高アスペクト比酸化物エッチング用のフルオロカーボン分子
JPWO2014129488A1 (ja) * 2013-02-21 2017-02-02 日本ゼオン株式会社 高純度１ｈ−ヘプタフルオロシクロペンテン
WO2014129488A1 (ja) 2013-02-21 2014-08-28 日本ゼオン株式会社 高純度１ｈ－ヘプタフルオロシクロペンテン
US9944852B2 (en) 2013-02-21 2018-04-17 Zeon Corporation High-purity 1H-heptafluorocyclopentene
JP2018093233A (ja) * 2013-02-21 2018-06-14 日本ゼオン株式会社 ドライエッチング方法
JPWO2022080271A1 (ja) * 2020-10-15 2022-04-21
JPWO2022080267A1 (ja) * 2020-10-15 2022-04-21
JPWO2022080268A1 (ja) * 2020-10-15 2022-04-21
JP7775835B2 (ja) 2020-10-15 2025-11-26 株式会社レゾナック エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法
JP7786387B2 (ja) 2020-10-15 2025-12-16 株式会社レゾナック エッチングガス、エッチング方法、及び半導体素子の製造方法
JP7786388B2 (ja) 2020-10-15 2025-12-16 株式会社レゾナック エッチングガス、エッチング方法、及び半導体素子の製造方法

Also Published As

Publication number Publication date
KR20100080774A (ko) 2010-07-12
US8535551B2 (en) 2013-09-17
US20100264116A1 (en) 2010-10-21
JP5440170B2 (ja) 2014-03-12
KR101442308B1 (ko) 2014-09-22
TW200926294A (en) 2009-06-16
JPWO2009041560A1 (ja) 2011-01-27
EP2194569A4 (en) 2011-06-22
EP2194569A1 (en) 2010-06-09
TWI438841B (zh) 2014-05-21

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