WO2009048061A1 - 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 - Google Patents

接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 Download PDF

Info

Publication number
WO2009048061A1
WO2009048061A1 PCT/JP2008/068237 JP2008068237W WO2009048061A1 WO 2009048061 A1 WO2009048061 A1 WO 2009048061A1 JP 2008068237 W JP2008068237 W JP 2008068237W WO 2009048061 A1 WO2009048061 A1 WO 2009048061A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive film
semiconductor
semiconductor wafer
producing
producing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/068237
Other languages
English (en)
French (fr)
Inventor
Keiichi Hatakeyama
Yuuki Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to CN200880110828A priority Critical patent/CN101821834A/zh
Priority to EP08837752A priority patent/EP2200074A4/en
Priority to JP2009537000A priority patent/JP5353703B2/ja
Priority to US12/682,254 priority patent/US8198176B2/en
Priority to KR1020107008476A priority patent/KR101176431B1/ko
Publication of WO2009048061A1 publication Critical patent/WO2009048061A1/ja
Anticipated expiration legal-status Critical
Priority to US13/475,753 priority patent/US20120295400A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07339—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by cooling, e.g. thermoplastics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

本発明の接着フィルム付き半導体チップの製造方法は、半導体ウェハの一方面に、半導体ウェハを複数の半導体チップに分画する切り込みを半導体ウェハの厚みよりも小さい深さで形成し、半導体ウェハの切り込みが形成されていない他方面を、切り込みに至るまで研削することにより得られる、複数の半導体チップからなる分割済み半導体ウェハと、半導体用接着フィルムと、ダイシングテープと、が少なくとも積層され、半導体用接着フィルムが１～１５μｍの範囲の厚みを有し且つ５％未満の引張破断伸度を有し該引張破断伸度が最大荷重時の伸度の１１０％未満である、積層体を準備する工程と、複数の半導体チップをそれぞれ積層体の積層方向にピックアップすることによって半導体用接着フィルムを分割して接着フィルム付き半導体チップを得る工程とを備える。
PCT/JP2008/068237 2007-10-09 2008-10-07 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 Ceased WO2009048061A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN200880110828A CN101821834A (zh) 2007-10-09 2008-10-07 带粘接膜半导体芯片的制造方法及用于该制造方法的半导体用粘接膜、以及半导体装置的制造方法
EP08837752A EP2200074A4 (en) 2007-10-09 2008-10-07 METHOD FOR PRODUCING A SEMICONDUCTOR CHIP WITH A LONG-TERM FILM, A LAMINATE FILM FOR A SEMICONDUCTOR USED IN THE PROCESS, AND METHOD FOR PRODUCING A SEMICONDUCTOR CONSTRUCTION ELEMENT
JP2009537000A JP5353703B2 (ja) 2007-10-09 2008-10-07 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法
US12/682,254 US8198176B2 (en) 2007-10-09 2008-10-07 Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
KR1020107008476A KR101176431B1 (ko) 2007-10-09 2008-10-07 접착 필름이 부착된 반도체칩의 제조 방법, 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법
US13/475,753 US20120295400A1 (en) 2007-10-09 2012-05-18 Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-263347 2007-10-09
JP2007263347 2007-10-09

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/475,753 Division US20120295400A1 (en) 2007-10-09 2012-05-18 Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device

Publications (1)

Publication Number Publication Date
WO2009048061A1 true WO2009048061A1 (ja) 2009-04-16

Family

ID=40549205

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068237 Ceased WO2009048061A1 (ja) 2007-10-09 2008-10-07 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法

Country Status (8)

Country Link
US (2) US8198176B2 (ja)
EP (1) EP2200074A4 (ja)
JP (2) JP5353703B2 (ja)
KR (2) KR20120007556A (ja)
CN (1) CN101821834A (ja)
MY (1) MY151700A (ja)
TW (1) TWI473152B (ja)
WO (1) WO2009048061A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028598A (ja) * 2010-07-26 2012-02-09 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2015503220A (ja) * 2011-11-02 2015-01-29 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子部品用接着剤
WO2016140248A1 (ja) * 2015-03-04 2016-09-09 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
JP2017117959A (ja) * 2015-12-24 2017-06-29 リンテック株式会社 半導体ウエハの加工方法、半導体チップの製造方法及び加工半導体ウエハ

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198176B2 (en) * 2007-10-09 2012-06-12 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
CN102947929B (zh) * 2010-04-19 2016-05-18 日东电工株式会社 倒装芯片型半导体背面用膜
JP5580701B2 (ja) * 2010-09-13 2014-08-27 日東電工株式会社 ダイシング・ダイボンドフィルム
JP5883250B2 (ja) * 2011-07-29 2016-03-09 リンテック株式会社 転写装置および転写方法
JP2013065757A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体チップのピックアップ方法及び半導体チップのピックアップ装置
DE102011116409B3 (de) * 2011-10-19 2013-03-07 Austriamicrosystems Ag Verfahren zur Herstellung dünner Halbleiterbauelemente
JP6034384B2 (ja) * 2012-08-23 2016-11-30 リンテック株式会社 保護膜形成層付ダイシングシートおよびチップの製造方法
JP5480415B1 (ja) * 2012-10-11 2014-04-23 古河電気工業株式会社 半導体ウェハ加工用粘着テープ
KR101994930B1 (ko) 2012-11-05 2019-07-01 삼성전자주식회사 일체형 단위 반도체 칩들을 갖는 반도체 패키지
US9484260B2 (en) * 2012-11-07 2016-11-01 Semiconductor Components Industries, Llc Heated carrier substrate semiconductor die singulation method
US9136173B2 (en) * 2012-11-07 2015-09-15 Semiconductor Components Industries, Llc Singulation method for semiconductor die having a layer of material along one major surface
KR20140123129A (ko) 2013-04-10 2014-10-22 삼성전자주식회사 반도체 패키지
US20160086908A1 (en) * 2013-05-28 2016-03-24 Lintec Corporation Adhesive agent composition, adhesive sheet, and method for manufacturing semiconductor device
KR102474242B1 (ko) * 2015-01-09 2022-12-06 삼성전자주식회사 반도체 패키지 및 그 제조 방법
DE102015100827B4 (de) * 2015-01-21 2024-10-02 Infineon Technologies Ag Verfahren zum Bearbeiten eines Halbleitersubstrats
DE102015204698B4 (de) 2015-03-16 2023-07-20 Disco Corporation Verfahren zum Teilen eines Wafers
US9633883B2 (en) 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
WO2016189986A1 (ja) * 2015-05-25 2016-12-01 リンテック株式会社 半導体装置の製造方法
FR3042906B1 (fr) * 2015-10-23 2018-07-27 Commissariat Energie Atomique Procede d’amincissement d’echantillons
WO2017145979A1 (ja) * 2016-02-23 2017-08-31 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
US10141215B2 (en) 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
US10504767B2 (en) 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
US10471545B2 (en) 2016-11-23 2019-11-12 Rohinni, LLC Top-side laser for direct transfer of semiconductor devices
WO2018180594A1 (ja) 2017-03-28 2018-10-04 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
JP6912254B2 (ja) * 2017-04-05 2021-08-04 株式会社ディスコ 加工方法
US10373869B2 (en) 2017-05-24 2019-08-06 Semiconductor Components Industries, Llc Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
GB201801457D0 (en) * 2018-01-30 2018-03-14 Pragmatic Printing Ltd Integrated circuit manufacturing process and apparatus
JP7214306B2 (ja) * 2018-04-27 2023-01-30 株式会社ディスコ 被加工物の加工方法
US10410905B1 (en) * 2018-05-12 2019-09-10 Rohinni, LLC Method and apparatus for direct transfer of multiple semiconductor devices
WO2020004210A1 (ja) * 2018-06-29 2020-01-02 リンテック株式会社 半導体チップの製造方法及び半導体装置の製造方法
US12142549B2 (en) * 2018-07-03 2024-11-12 Texas Instruments Incorporated Wafer stencil for controlling die attach material thickness on die
US11094571B2 (en) 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment
JP7427480B2 (ja) * 2020-03-09 2024-02-05 キオクシア株式会社 半導体装置
JP7446887B2 (ja) 2020-03-30 2024-03-11 リンテック株式会社 フィルム状接着剤
CN115443524A (zh) * 2020-04-23 2022-12-06 三井化学东赛璐株式会社 背面研磨用粘着性膜及电子装置的制造方法
MY198402A (en) * 2020-12-17 2023-08-28 Inari Tech Sdn Bhd A Method For Fabricating Semiconductor Articles And System Thereof
US20260040958A1 (en) * 2024-07-31 2026-02-05 Texas Instruments Incorporated Isolation for chip on lead device and manufacturing method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002160211A (ja) 2000-11-27 2002-06-04 Murata Mfg Co Ltd 積層セラミック電子部品の製造方法
JP2002367933A (ja) 2001-06-11 2002-12-20 Disco Abrasive Syst Ltd 半導体ウェーハの分離方法
JP2003017513A (ja) * 2001-07-04 2003-01-17 Toshiba Corp 半導体装置の製造方法
JP2006086509A (ja) * 2004-08-17 2006-03-30 Denso Corp 半導体基板の分断方法
JP2007019151A (ja) * 2005-07-06 2007-01-25 Furukawa Electric Co Ltd:The ウエハ加工用テープおよびそれを用いたチップの製造方法
WO2008126718A1 (ja) * 2007-04-05 2008-10-23 Hitachi Chemical Company, Ltd. 半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5903046A (en) * 1996-02-20 1999-05-11 Micron Technology, Inc. Integrated circuit device having cyanate ester buffer coat
JP3410371B2 (ja) * 1998-08-18 2003-05-26 リンテック株式会社 ウエハ裏面研削時の表面保護シートおよびその利用方法
JP3816253B2 (ja) * 1999-01-19 2006-08-30 富士通株式会社 半導体装置の製造方法
DE19962763C2 (de) * 1999-07-01 2001-07-26 Fraunhofer Ges Forschung Verfahren zum Vereinzeln eines Wafers
TWI299748B (en) * 2000-02-15 2008-08-11 Hitachi Chemical Co Ltd Adhesive composition, its manufacturing method, and adhesive film, substrate for carrying a semiconductor device and semiconductor device using such adhesive composition
JP2002016021A (ja) 2000-06-28 2002-01-18 Toshiba Corp 半導体チップの生産方法及び半導体チップ
JP3485525B2 (ja) * 2000-07-06 2004-01-13 沖電気工業株式会社 半導体装置の製造方法
JP2002043251A (ja) * 2000-07-25 2002-02-08 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
JP4708577B2 (ja) * 2001-01-31 2011-06-22 キヤノン株式会社 薄膜半導体装置の製造方法
JP3544362B2 (ja) * 2001-03-21 2004-07-21 リンテック株式会社 半導体チップの製造方法
US6790524B2 (en) * 2001-08-02 2004-09-14 Toray Plastics (America), Inc. Biaxially oriented polypropylene metallized film for packaging
WO2003028072A1 (en) * 2001-09-20 2003-04-03 Renesas Technology Corp. Method for manufacturing semiconductor device
KR101177251B1 (ko) * 2003-06-06 2012-08-24 히다치 가세고교 가부시끼가이샤 접착시트, 다이싱 테이프 일체형 접착시트 및 반도체 장치의 제조방법
JP2005019525A (ja) * 2003-06-24 2005-01-20 Disco Abrasive Syst Ltd 半導体チップの製造方法
JP4406300B2 (ja) 2004-02-13 2010-01-27 株式会社東芝 半導体装置及びその製造方法
KR100555559B1 (ko) * 2004-03-03 2006-03-03 삼성전자주식회사 백 그라인딩 공정용 표면 보호 테이프를 이용하여 다이싱공정을 수행하는 반도체 장치의 제조 방법
MY138566A (en) * 2004-03-15 2009-06-30 Hitachi Chemical Co Ltd Dicing/die bonding sheet
WO2005112091A1 (ja) * 2004-05-18 2005-11-24 Hitachi Chemical Co., Ltd. 粘接着シート並びにそれを用いた半導体装置及びその製造方法
US7550367B2 (en) * 2004-08-17 2009-06-23 Denso Corporation Method for separating semiconductor substrate
JP4624813B2 (ja) * 2005-01-21 2011-02-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体製造装置
JP2006203133A (ja) 2005-01-24 2006-08-03 Lintec Corp チップ体の製造方法、デバイスの製造方法およびチップ体固着用粘接着シート
JP4630692B2 (ja) * 2005-03-07 2011-02-09 株式会社ディスコ レーザー加工方法
DE102005024431B4 (de) * 2005-05-24 2009-08-06 Infineon Technologies Ag Verfahren zur Herstellung von Halbleiterbauteilen unter Verwendung einer Trägerplatte mit doppelseitig klebender Klebstofffolie
JP4285455B2 (ja) * 2005-07-11 2009-06-24 パナソニック株式会社 半導体チップの製造方法
JP4721834B2 (ja) * 2005-09-06 2011-07-13 日東電工株式会社 粘着シート及びこの粘着シートを用いた製品の加工方法
JP2007250598A (ja) * 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置の製造方法
JP5275553B2 (ja) * 2006-06-27 2013-08-28 スリーエム イノベイティブ プロパティズ カンパニー 分割チップの製造方法
WO2008010547A1 (en) * 2006-07-19 2008-01-24 Sekisui Chemical Co., Ltd. Dicing/die-bonding tape and method for manufacturing semiconductor chip
JP2008186959A (ja) * 2007-01-29 2008-08-14 Toyoda Gosei Co Ltd Ｉｉｉ−ｖ族半導体素子、およびその製造方法
CN102709201A (zh) * 2007-04-06 2012-10-03 日立化成工业株式会社 半导体用粘接膜、复合片及使用它们的半导体芯片的制造方法
US8198176B2 (en) * 2007-10-09 2012-06-12 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
EP2200075A4 (en) * 2007-10-09 2011-12-07 Hitachi Chemical Co Ltd METHOD FOR PRODUCING A SEMICONDUCTOR CHIP WITH A LONG-TERM FILM, A LONG-TERM FOR A SEMICONDUCTOR USED IN THE PROCESS, AND METHOD FOR PRODUCING A SEMICONDUCTOR CONSTRUCTION ELEMENT
KR101191121B1 (ko) * 2007-12-03 2012-10-15 주식회사 엘지화학 다이싱 다이본딩 필름 및 다이싱 방법
JP4717085B2 (ja) * 2008-01-18 2011-07-06 日東電工株式会社 ダイシング・ダイボンドフィルム
JP5561949B2 (ja) * 2009-04-08 2014-07-30 日東電工株式会社 熱硬化型ダイボンドフィルム

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002160211A (ja) 2000-11-27 2002-06-04 Murata Mfg Co Ltd 積層セラミック電子部品の製造方法
JP2002367933A (ja) 2001-06-11 2002-12-20 Disco Abrasive Syst Ltd 半導体ウェーハの分離方法
JP2003017513A (ja) * 2001-07-04 2003-01-17 Toshiba Corp 半導体装置の製造方法
JP2006086509A (ja) * 2004-08-17 2006-03-30 Denso Corp 半導体基板の分断方法
JP2007019151A (ja) * 2005-07-06 2007-01-25 Furukawa Electric Co Ltd:The ウエハ加工用テープおよびそれを用いたチップの製造方法
WO2008126718A1 (ja) * 2007-04-05 2008-10-23 Hitachi Chemical Company, Ltd. 半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2200074A4

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028598A (ja) * 2010-07-26 2012-02-09 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2015503220A (ja) * 2011-11-02 2015-01-29 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子部品用接着剤
WO2016140248A1 (ja) * 2015-03-04 2016-09-09 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
JPWO2016140248A1 (ja) * 2015-03-04 2017-12-14 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
JP2017117959A (ja) * 2015-12-24 2017-06-29 リンテック株式会社 半導体ウエハの加工方法、半導体チップの製造方法及び加工半導体ウエハ

Also Published As

Publication number Publication date
TW200924047A (en) 2009-06-01
KR101176431B1 (ko) 2012-08-30
US20100311227A1 (en) 2010-12-09
EP2200074A4 (en) 2011-12-07
JP2013179317A (ja) 2013-09-09
US8198176B2 (en) 2012-06-12
KR20120007556A (ko) 2012-01-20
MY151700A (en) 2014-06-30
KR20100061557A (ko) 2010-06-07
JPWO2009048061A1 (ja) 2011-02-17
JP5353703B2 (ja) 2013-11-27
US20120295400A1 (en) 2012-11-22
TWI473152B (zh) 2015-02-11
EP2200074A1 (en) 2010-06-23
CN101821834A (zh) 2010-09-01

Similar Documents

Publication Publication Date Title
WO2009048061A1 (ja) 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法
WO2009048060A1 (ja) 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法
WO2008126718A1 (ja) 半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート
JP2010206044A (ja) 半導体装置の製造方法
EP1496547A3 (en) Multilayer sheet for backside grinding of a semiconductor wafer
JP5391158B2 (ja) ウエハ貼着用粘着シートおよびそれを用いたウエハの加工方法
WO2009155247A3 (en) Semiconductor die separation method
WO2009011281A1 (ja) ダイシング－ダイボンディングテープ及び半導体チップの製造方法
MY160284A (en) Adhesive, adhesive sheet, and process for producing electronic components
WO2009050785A1 (ja) 粘着剤、粘着シート、多層粘着シート及び電子部品の製造方法
WO2008102548A1 (ja) 半導体発光素子および半導体発光装置の製造方法
WO2008132852A1 (ja) ダイシング・ダイボンディングテープ及び半導体チップの製造方法
WO2008108119A1 (ja) ダイシング・ダイボンドフィルム
WO2009001732A1 (ja) 半導体ウエハ研削方法とそれに用いる樹脂組成物及び保護シート
EP1681713A4 (en) SURFACE PROTECTION FILM AND SEMICONDUCTOR WAFER LAPPING METHOD
TW200627536A (en) Adhesive sheet, method for producing the sheet, method for producing semiconductor device, and the semiconductor device
TW200707698A (en) Semiconductor device, manufacturing method for semiconductor device, and electronic equipment
WO2007036858A3 (en) Iii-v light emitting device
MY156758A (en) Multilayer adhesive sheet and method for manufacturing electronic component
EP1993128A3 (en) Method for manufacturing soi substrate
WO2008076635A3 (en) Stacked flip-assembled semiconductor chips embedded in thin hybrid substrate
ATE504543T1 (de) Verbund aus mindestens zwei halbleitersubstraten sowie herstellungsverfahren
EP3193366A3 (en) Under bump metallization for on-die capacitor
EP2607441A3 (en) Pressure-sensitive adhesive tape for battery, battery using the pressure-sensitive adhesive tape and process for manufacturing a battery
WO2014156127A1 (ja) 積層フィルムの製造方法、積層フィルムおよびそれを用いた半導体装置の製造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880110828.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08837752

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009537000

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20107008476

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2008837752

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: PI 2010001579

Country of ref document: MY

WWE Wipo information: entry into national phase

Ref document number: 12682254

Country of ref document: US