WO2009050945A1 - スピンバルブ素子 - Google Patents

スピンバルブ素子 Download PDF

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Publication number
WO2009050945A1
WO2009050945A1 PCT/JP2008/065406 JP2008065406W WO2009050945A1 WO 2009050945 A1 WO2009050945 A1 WO 2009050945A1 JP 2008065406 W JP2008065406 W JP 2008065406W WO 2009050945 A1 WO2009050945 A1 WO 2009050945A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
spin
valve element
microwave
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065406
Other languages
English (en)
French (fr)
Inventor
Haruo Kawakami
Yasushi Ogimoto
Eiki Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Holdings Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Holdings Ltd filed Critical Fuji Electric Holdings Ltd
Priority to JP2009537989A priority Critical patent/JPWO2009050945A1/ja
Priority to US12/738,040 priority patent/US20100297475A1/en
Priority to EP08840237A priority patent/EP2209143A4/en
Publication of WO2009050945A1 publication Critical patent/WO2009050945A1/ja
Anticipated expiration legal-status Critical
Priority to US14/522,594 priority patent/US20150207062A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1114—Magnetoresistive having tunnel junction effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)

Abstract

　スピンバルブ素子に流せる電力を増大するために、絶縁体層２４または非磁性層５１が強磁性体層２３，２５によって挟持されて、微細孔を複数有する多孔質層１０（１０´）を一方の強磁性体層に接するように、または、その強磁性体層との間に他の層を置いて配置する。これにより、広い領域の単一の磁区の磁性多層膜を用いなくても、例えば、スピンパブル素子によってマイクロ波を発振させる際にマイクロ波の電力を大きくすることができる。
PCT/JP2008/065406 2007-10-15 2008-08-28 スピンバルブ素子 Ceased WO2009050945A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009537989A JPWO2009050945A1 (ja) 2007-10-15 2008-08-28 スピンバルブ素子
US12/738,040 US20100297475A1 (en) 2007-10-15 2008-08-28 Spin valve element
EP08840237A EP2209143A4 (en) 2007-10-15 2008-08-28 Spin-valve element
US14/522,594 US20150207062A1 (en) 2007-10-15 2014-10-24 Spin valve element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007267574 2007-10-15
JP2007-267574 2007-10-15

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/738,040 A-371-Of-International US20100297475A1 (en) 2007-10-15 2008-08-28 Spin valve element
US14/522,594 Continuation US20150207062A1 (en) 2007-10-15 2014-10-24 Spin valve element

Publications (1)

Publication Number Publication Date
WO2009050945A1 true WO2009050945A1 (ja) 2009-04-23

Family

ID=40567222

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065406 Ceased WO2009050945A1 (ja) 2007-10-15 2008-08-28 スピンバルブ素子

Country Status (5)

Country Link
US (2) US20100297475A1 (ja)
EP (1) EP2209143A4 (ja)
JP (1) JPWO2009050945A1 (ja)
KR (1) KR20100074174A (ja)
WO (1) WO2009050945A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012033571A1 (en) * 2010-09-09 2012-03-15 New York University Aggregated spin-tprque nano-oscillators
DE102011083623A1 (de) * 2011-09-28 2013-03-28 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Dünnschichtbauelement und Verfahren zu seiner Herstellung
WO2016103688A1 (ja) * 2014-12-25 2016-06-30 株式会社デンソー アンテナ装置と高周波発信機
JP2016123036A (ja) * 2014-12-25 2016-07-07 株式会社デンソー アンテナ装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8623452B2 (en) * 2010-12-10 2014-01-07 Avalanche Technology, Inc. Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
JP5142923B2 (ja) * 2008-09-30 2013-02-13 株式会社東芝 磁性発振素子、磁気センサ及び磁気記録再生装置
JP5664706B2 (ja) * 2012-07-05 2015-02-04 株式会社デンソー 磁気センサ
KR102237706B1 (ko) 2014-09-29 2021-04-08 삼성전자주식회사 자기 메모리 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031545A (ja) * 2002-06-25 2004-01-29 Alps Electric Co Ltd 磁気検出素子及びその製造方法
JP2004314238A (ja) * 2003-04-16 2004-11-11 Canon Inc ナノ構造体の製造方法及びナノ構造体
JP2006075942A (ja) 2004-09-09 2006-03-23 Fujitsu Ltd 積層構造体、磁気記録媒体及びその製造方法、磁気記録装置及び磁気記録方法、並びに、該積層構造体を用いた素子
JP2006295908A (ja) * 2005-03-18 2006-10-26 Japan Science & Technology Agency マイクロ波伝送回路一体型マイクロ波発生素子及びマイクロ波伝送回路一体型マイクロ波検出素子
JP2007019179A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2008053915A (ja) * 2006-08-23 2008-03-06 Sharp Corp マイクロ波発振素子及びその製造方法、並びに該マイクロ波発振素子を備えたマイクロ波発振装置

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US6303218B1 (en) * 1998-03-20 2001-10-16 Kabushiki Kaisha Toshiba Multi-layered thin-film functional device and magnetoresistance effect element
JP2000232173A (ja) * 1998-12-09 2000-08-22 Matsushita Electronics Industry Corp 半導体記憶装置およびその製造方法
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
JP3996510B2 (ja) * 2000-12-25 2007-10-24 東京エレクトロン株式会社 半導体装置の製造方法
FR2830971B1 (fr) * 2001-10-12 2004-03-12 Commissariat Energie Atomique Dispositif magnetoresistif a vanne de spin a performances ameliorees
JP2003142755A (ja) * 2001-11-05 2003-05-16 Fujitsu Ltd 磁気抵抗センサ及びその製造方法
JP2003198004A (ja) * 2001-12-27 2003-07-11 Fujitsu Ltd 磁気抵抗効果素子
JP2005078750A (ja) * 2003-09-02 2005-03-24 Toshiba Corp 磁気記録再生装置
JP2005086112A (ja) * 2003-09-10 2005-03-31 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、ヘッドサスペンションアッセンブリ、および磁気再生装置
JP2005109239A (ja) * 2003-09-30 2005-04-21 Tdk Corp 磁気抵抗効果素子及び磁気ヘッド
US7635903B2 (en) * 2005-09-13 2009-12-22 Everspin Technologies, Inc. Oscillator and method of manufacture
JP2007134534A (ja) * 2005-11-11 2007-05-31 Renesas Technology Corp 半導体装置の製造方法
JP4550777B2 (ja) * 2006-07-07 2010-09-22 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ
JP4388093B2 (ja) * 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031545A (ja) * 2002-06-25 2004-01-29 Alps Electric Co Ltd 磁気検出素子及びその製造方法
JP2004314238A (ja) * 2003-04-16 2004-11-11 Canon Inc ナノ構造体の製造方法及びナノ構造体
JP2006075942A (ja) 2004-09-09 2006-03-23 Fujitsu Ltd 積層構造体、磁気記録媒体及びその製造方法、磁気記録装置及び磁気記録方法、並びに、該積層構造体を用いた素子
JP2006295908A (ja) * 2005-03-18 2006-10-26 Japan Science & Technology Agency マイクロ波伝送回路一体型マイクロ波発生素子及びマイクロ波伝送回路一体型マイクロ波検出素子
JP2007019179A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2008053915A (ja) * 2006-08-23 2008-03-06 Sharp Corp マイクロ波発振素子及びその製造方法、並びに該マイクロ波発振素子を備えたマイクロ波発振装置

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
F. B. MANCOFF ET AL.: "Phase-locking in double-point-contact spin-transfer devices", NATURE, vol. 437, 15 September 2005 (2005-09-15), pages 393 - 395, XP002497339 *
H. MASUDA: "High-regularity metal nano-hole array based on anodic oxidized alumina", KOTAI BUTSURI, vol. 31, no. 5, 1996, pages 493
S. KAKA ET AL.: "Mutual phase-locking of microwave spin torque nano-oscillators", NATURE, vol. 437, 2005, pages 389
S.I. KISELEV ET AL.: "Microwave oscillations of a nanomagnet driven by a spin-polarized current", NATURE, vol. 425, 2003, pages 380
See also references of EP2209143A4
X.M. YANG ET AL.: "Nanoscopic templates using self-assembled cylindrical diblock co-polymers for patterned media", J. VAC. SCI. TECHNOL. B, vol. 22, 2004, pages 3331

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012033571A1 (en) * 2010-09-09 2012-03-15 New York University Aggregated spin-tprque nano-oscillators
US8629729B2 (en) 2010-09-09 2014-01-14 New York University Aggregated spin-torque nano-oscillators
US9739851B2 (en) 2010-09-09 2017-08-22 New York Univeristy Aggregated spin-torque nano-oscillators
DE102011083623A1 (de) * 2011-09-28 2013-03-28 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Dünnschichtbauelement und Verfahren zu seiner Herstellung
WO2016103688A1 (ja) * 2014-12-25 2016-06-30 株式会社デンソー アンテナ装置と高周波発信機
JP2016123036A (ja) * 2014-12-25 2016-07-07 株式会社デンソー アンテナ装置

Also Published As

Publication number Publication date
KR20100074174A (ko) 2010-07-01
JPWO2009050945A1 (ja) 2011-02-24
EP2209143A1 (en) 2010-07-21
US20150207062A1 (en) 2015-07-23
US20100297475A1 (en) 2010-11-25
EP2209143A4 (en) 2011-08-17

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