WO2009054183A1 - スピンバルブ素子及びその駆動方法 - Google Patents

スピンバルブ素子及びその駆動方法 Download PDF

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Publication number
WO2009054183A1
WO2009054183A1 PCT/JP2008/065423 JP2008065423W WO2009054183A1 WO 2009054183 A1 WO2009054183 A1 WO 2009054183A1 JP 2008065423 W JP2008065423 W JP 2008065423W WO 2009054183 A1 WO2009054183 A1 WO 2009054183A1
Authority
WO
WIPO (PCT)
Prior art keywords
valve element
driving method
spin valve
modulation
ton
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065423
Other languages
English (en)
French (fr)
Inventor
Haruo Kawakami
Yasushi Ogimoto
Eiki Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Holdings Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Holdings Ltd filed Critical Fuji Electric Holdings Ltd
Priority to EP08842281A priority Critical patent/EP2214313A4/en
Priority to KR1020107008724A priority patent/KR101456950B1/ko
Priority to US12/739,740 priority patent/US8411395B2/en
Priority to JP2009537991A priority patent/JPWO2009054183A1/ja
Publication of WO2009054183A1 publication Critical patent/WO2009054183A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/08—Amplitude modulation by means of variable impedance element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Electrical Control Of Air Or Fuel Supplied To Internal-Combustion Engine (AREA)

Abstract

　スピンバルブ素子の過熱を防止する。駆動電流を、該発振信号の発振周波数よりも低い周波数により振幅変調するステップを含む、スピンバルブ素子に駆動電流を流して発振信号を得る駆動方法であり、この振幅変調は、ＯＮ－ＯＦＦ変調とすることができ、さらに、ＯＮ－ＯＦＦ変調の通電状態の期間ｔｏｎは、αを当該熱拡散部の熱拡散率、Ｄを熱拡散部の厚さとして、関係式ｔｏｎ＜Ｄ２／αを満たすようにする。
PCT/JP2008/065423 2007-10-26 2008-08-28 スピンバルブ素子及びその駆動方法 Ceased WO2009054183A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08842281A EP2214313A4 (en) 2007-10-26 2008-08-28 SPIN VALVE ELEMENT AND DRIVE PROCESS THEREFOR
KR1020107008724A KR101456950B1 (ko) 2007-10-26 2008-08-28 스핀밸브 소자 및 그 구동 방법
US12/739,740 US8411395B2 (en) 2007-10-26 2008-08-28 Spin valve element and method of driving same
JP2009537991A JPWO2009054183A1 (ja) 2007-10-26 2008-08-28 スピンバルブ素子及びその駆動方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007278545 2007-10-26
JP2007-278545 2007-10-26

Publications (1)

Publication Number Publication Date
WO2009054183A1 true WO2009054183A1 (ja) 2009-04-30

Family

ID=40579290

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065423 Ceased WO2009054183A1 (ja) 2007-10-26 2008-08-28 スピンバルブ素子及びその駆動方法

Country Status (5)

Country Link
US (1) US8411395B2 (ja)
EP (1) EP2214313A4 (ja)
JP (1) JPWO2009054183A1 (ja)
KR (1) KR101456950B1 (ja)
WO (1) WO2009054183A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2556016A4 (en) * 2010-05-14 2017-10-18 Nokia Technologies Oy Frequency synthesis apparatus and method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2974468B1 (fr) * 2011-04-20 2013-05-31 Commissariat Energie Atomique Demodulateur d'un signal electrique module en frequence
US8542456B2 (en) * 2011-08-25 2013-09-24 Tdk Corporation Magnetic head having a contact sensor
US8619394B1 (en) * 2012-11-29 2013-12-31 HGST Netherlands B.V. Magnetic tunnel junction with barrier cooling for magnetic read head
KR102088313B1 (ko) * 2017-11-16 2020-03-13 성균관대학교 산학협력단 자기 특성 조절이 가능한 할라이드 전자화물

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006101040A1 (ja) * 2005-03-18 2006-09-28 Japan Science And Technology Agency マイクロ波伝送回路一体型マイクロ波発生素子及びマイクロ波伝送回路一体型マイクロ波検出素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6529556B1 (en) * 1997-01-31 2003-03-04 Thomson Licensing S.A. Remote control apparatus and method
US7678475B2 (en) * 2006-05-05 2010-03-16 Slavin Andrei N Spin-torque devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006101040A1 (ja) * 2005-03-18 2006-09-28 Japan Science And Technology Agency マイクロ波伝送回路一体型マイクロ波発生素子及びマイクロ波伝送回路一体型マイクロ波検出素子
JP2006295908A (ja) * 2005-03-18 2006-10-26 Japan Science & Technology Agency マイクロ波伝送回路一体型マイクロ波発生素子及びマイクロ波伝送回路一体型マイクロ波検出素子

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
F.B. MANCOFF ET AL.: "Phase- locking in double-point-contact spin-transfer devices", NATURE, vol. 437, 2005, pages 393, XP002497339, DOI: doi:10.1038/nature04036
J. GROLLIER ET AL.: "Synchronization of spin-transfer oscillator driven by stimulated microwave currents", PHYSICAL REVIEW, vol. B73, pages 060409
KISELEC S.I. ET AL.: "Microwave oscillations of a nanomagnet driven by a spin-polarized current", NATURE, vol. 425, 25 September 2003 (2003-09-25), pages 380 - 383, XP002329287 *
S. KAKA ET AL.: "Mutual phase- locking of microwave spin torque nano-oscillators", NATURE, vol. 437, 2005, pages 389, XP002666858, DOI: doi:10.1038/NATURE04035
S.I. KISELEV ET AL.: "Microwave oscillations of a nanomagnet driven by a spin-polarized current", NATURE, vol. 425, 2003, pages 380, XP002329287, DOI: doi:10.1038/nature01967
See also references of EP2214313A4
SUZUKI Y. ET AL.: "Spin Chunyu Jika Hanten Soshi no Koshuha Tokusei", SPIN-RYU KUDO DEVICE NO SAIZENSEN, THE MAGNETICS SOCIETY OF JAPAN, 30 January 2006 (2006-01-30), pages 49 - 55, XP003005250 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2556016A4 (en) * 2010-05-14 2017-10-18 Nokia Technologies Oy Frequency synthesis apparatus and method

Also Published As

Publication number Publication date
US20100296203A1 (en) 2010-11-25
US8411395B2 (en) 2013-04-02
KR20100084633A (ko) 2010-07-27
EP2214313A4 (en) 2012-03-07
KR101456950B1 (ko) 2014-10-31
JPWO2009054183A1 (ja) 2011-03-03
EP2214313A1 (en) 2010-08-04

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