WO2009060852A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2009060852A1
WO2009060852A1 PCT/JP2008/070109 JP2008070109W WO2009060852A1 WO 2009060852 A1 WO2009060852 A1 WO 2009060852A1 JP 2008070109 W JP2008070109 W JP 2008070109W WO 2009060852 A1 WO2009060852 A1 WO 2009060852A1
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WO
WIPO (PCT)
Prior art keywords
region
layer
rear surface
peripheral region
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/070109
Other languages
English (en)
French (fr)
Inventor
Masafumi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Priority to EP08848331A priority Critical patent/EP2219224B1/en
Priority to CN2008801147519A priority patent/CN101849288B/zh
Priority to US12/741,622 priority patent/US7973363B2/en
Publication of WO2009060852A1 publication Critical patent/WO2009060852A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

　オン抵抗を増大させずに周辺領域を高耐圧化した半導体装置を提供する。 　ＩＧＢＴは、ボディ領域とガードリングとコレクタ層を備える。ボディ領域は、活性領域におけるドリフト層の表層に形成されている。ガードリングは、周辺領域におけるドリフト層の表層に形成されており、ボディ領域を囲んでいる。コレクタ層は、ドリフト層の裏面側に形成されており、活性領域と周辺領域に亘って形成されている。ガードリングの裏面とドリフト層裏面との間の距離Ｆが、ボディ領域の裏面とドリフト層の裏面との間の距離よりも長い。周辺領域のコレクタ層の厚みＨが、活性領域のコレクタ層の厚みＤよりも薄い。そのような構成により、周辺領域では、活性領域に比較して、厚い半導体層へ少ないキャリアが注入される。従って、このＩＧＢＴは、周辺領域に注入されるキャリアの密度を活性領域に比較して低くすることができる。即ち、このＩＧＢＴは、活性領域のオン抵抗を増大させずに周辺領域の耐圧を向上させることができる。
PCT/JP2008/070109 2007-11-07 2008-11-05 半導体装置 Ceased WO2009060852A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08848331A EP2219224B1 (en) 2007-11-07 2008-11-05 Igbt semiconductor device
CN2008801147519A CN101849288B (zh) 2007-11-07 2008-11-05 半导体装置
US12/741,622 US7973363B2 (en) 2007-11-07 2008-11-05 IGBT semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007289536A JP4265684B1 (ja) 2007-11-07 2007-11-07 半導体装置
JP2007-289536 2007-11-07

Publications (1)

Publication Number Publication Date
WO2009060852A1 true WO2009060852A1 (ja) 2009-05-14

Family

ID=40625740

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070109 Ceased WO2009060852A1 (ja) 2007-11-07 2008-11-05 半導体装置

Country Status (5)

Country Link
US (1) US7973363B2 (ja)
EP (1) EP2219224B1 (ja)
JP (1) JP4265684B1 (ja)
CN (1) CN101849288B (ja)
WO (1) WO2009060852A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110175139A1 (en) * 2008-10-29 2011-07-21 Katsuyuki Torii Semiconductor device and method for manufacturing same

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JP2009194330A (ja) * 2008-02-18 2009-08-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
US8159022B2 (en) * 2008-09-30 2012-04-17 Infineon Technologies Austria Ag Robust semiconductor device with an emitter zone and a field stop zone
JP5606240B2 (ja) * 2010-09-22 2014-10-15 三菱電機株式会社 半導体装置
JP5621703B2 (ja) * 2011-04-26 2014-11-12 三菱電機株式会社 半導体装置
US9041051B2 (en) 2011-07-05 2015-05-26 Mitsubishi Electric Corporation Semiconductor device
KR101261350B1 (ko) 2011-08-08 2013-05-06 아페리오(주) 박형 인쇄회로기판 제작을 위한 회로패턴 형성 방법
KR101604234B1 (ko) * 2012-03-05 2016-03-17 미쓰비시덴키 가부시키가이샤 반도체장치
US8618576B1 (en) * 2012-08-27 2013-12-31 Infineon Technologies Ag Semiconductor device with back side metal structure
KR101339574B1 (ko) * 2012-08-30 2013-12-10 삼성전기주식회사 절연 게이트형 바이폴라 트랜지스터
CN103715074B (zh) * 2012-09-28 2016-08-03 中国科学院微电子研究所 采用质子辐照制备终端结构的方法
CN103208531B (zh) * 2013-04-07 2015-07-15 株洲南车时代电气股份有限公司 一种快恢复二极管frd芯片及其制作方法
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
US9671351B2 (en) * 2014-04-24 2017-06-06 Stmicroelectronics S.R.L. Multi-sensor optical device for detecting chemical species and manufacturing method thereof
US9818837B2 (en) * 2014-12-10 2017-11-14 Semiconductor Components Industries, Llc Process of forming an electronic device having an electronic component
WO2017089003A1 (en) * 2015-11-27 2017-06-01 Abb Schweiz Ag Area efficient floating field ring termination
CN107425061B (zh) * 2016-05-24 2020-01-07 株洲中车时代电气股份有限公司 变掺杂阳极igbt结构及其制作方法
CN109478561B (zh) * 2016-07-20 2022-05-13 三菱电机株式会社 半导体装置以及其制造方法
JP6854654B2 (ja) * 2017-01-26 2021-04-07 ローム株式会社 半導体装置
JP7043750B2 (ja) * 2017-07-14 2022-03-30 株式会社デンソー ＳｉＣ－ＭＯＳＦＥＴ
US11450734B2 (en) * 2019-06-17 2022-09-20 Fuji Electric Co., Ltd. Semiconductor device and fabrication method for semiconductor device
CN110676314B (zh) * 2019-10-23 2021-05-04 广东美的白色家电技术创新中心有限公司 一种绝缘栅双极型晶体管、功率模块及生活电器
JP7718052B2 (ja) * 2020-06-17 2025-08-05 富士電機株式会社 半導体装置および半導体装置の製造方法
CN113809147A (zh) 2020-06-17 2021-12-17 富士电机株式会社 半导体装置以及半导体装置的制造方法
CN119300390B (zh) * 2024-09-29 2025-10-24 陕西亚成微电子股份有限公司 功率半导体制备方法及功率半导体结构

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JP2002110985A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体装置及びその製造方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110175139A1 (en) * 2008-10-29 2011-07-21 Katsuyuki Torii Semiconductor device and method for manufacturing same
US8384123B2 (en) * 2008-10-29 2013-02-26 Sanken Electric Co., Ltd. Semiconductor device and method for manufacturing same

Also Published As

Publication number Publication date
EP2219224A4 (en) 2010-11-17
EP2219224B1 (en) 2012-12-26
US7973363B2 (en) 2011-07-05
EP2219224A1 (en) 2010-08-18
JP2009117634A (ja) 2009-05-28
US20100224907A1 (en) 2010-09-09
CN101849288B (zh) 2013-02-13
CN101849288A (zh) 2010-09-29
JP4265684B1 (ja) 2009-05-20

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