WO2009068763A3 - Procede, dispositif et systeme de mesure de deformations a l'echelle nanometrique - Google Patents

Procede, dispositif et systeme de mesure de deformations a l'echelle nanometrique Download PDF

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Publication number
WO2009068763A3
WO2009068763A3 PCT/FR2008/001302 FR2008001302W WO2009068763A3 WO 2009068763 A3 WO2009068763 A3 WO 2009068763A3 FR 2008001302 W FR2008001302 W FR 2008001302W WO 2009068763 A3 WO2009068763 A3 WO 2009068763A3
Authority
WO
WIPO (PCT)
Prior art keywords
deformations
zone
measurement zone
specimen
nanoscale
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2008/001302
Other languages
English (en)
Other versions
WO2009068763A2 (fr
WO2009068763A4 (fr
Inventor
Martin Hytch
Etienne Snoeck
Florent Houdellier
Florian Hue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0706711A external-priority patent/FR2921477B1/fr
Priority claimed from FR0802685A external-priority patent/FR2931261B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to EP08853292.4A priority Critical patent/EP2193360B1/fr
Priority to US12/680,078 priority patent/US8502143B2/en
Priority to JP2010525386A priority patent/JP5562243B2/ja
Publication of WO2009068763A2 publication Critical patent/WO2009068763A2/fr
Publication of WO2009068763A3 publication Critical patent/WO2009068763A3/fr
Publication of WO2009068763A4 publication Critical patent/WO2009068763A4/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/295—Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1514—Prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2614—Holography or phase contrast, phase related imaging in general, e.g. phase plates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)

Abstract

Procédé de mesure de déformations à l'échelle nanométrique dans une portion (B) d'un échantillon cristallin, comportant les étapes consistant à: i: préparer un échantillon en forme de lame, comprenant une zone de mesure (B) et une zone de référence (A), supposée sans déformations et coplanaire avec la zone de mesure; ii: éclairer une face dudit échantillon par un faisceau (Fin) d'électrons; iii: superposer un faisceau (F1 B) du rayonnement diffracté par la zone de mesure (B) avec un faisceau (F1 A) du rayonnement diffracté par la zone de référence (A), de manière à faire interférer ces deux faisceaux; iv: mesurer la périodicité spatiale et l'orientation des franges de la figure d'interférence (FI); et v: en déduire une différence de paramètre cristallin et/ou d'orientation entre lesdites zones de référence et de mesure, indicative d'un état de déformation à l'échelle nanométrique de cette dernière. Dispositif et système pour la mise en œuvre d'un tel procédé.
PCT/FR2008/001302 2007-09-25 2008-09-17 Procede, dispositif et systeme de mesure de deformations a l'echelle nanometrique Ceased WO2009068763A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08853292.4A EP2193360B1 (fr) 2007-09-25 2008-09-17 Procede et systeme de mesure de deformations a l'echelle nanometrique
US12/680,078 US8502143B2 (en) 2007-09-25 2008-09-17 Method, device and system for measuring nanoscale deformations
JP2010525386A JP5562243B2 (ja) 2007-09-25 2008-09-17 ナノスケール変形を測定する方法、デバイス及びシステム

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
FR0706711A FR2921477B1 (fr) 2007-09-25 2007-09-25 Procede et systeme de mesure de deformations a l'echelle nanometrique
FR0706711 2007-09-25
FR0801662 2008-03-26
FR0801662 2008-03-26
FR0802685 2008-05-19
FR0802685A FR2931261B1 (fr) 2008-05-19 2008-05-19 Dispositif pour holographie electronique

Publications (3)

Publication Number Publication Date
WO2009068763A2 WO2009068763A2 (fr) 2009-06-04
WO2009068763A3 true WO2009068763A3 (fr) 2009-07-23
WO2009068763A4 WO2009068763A4 (fr) 2009-09-11

Family

ID=40612870

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2008/001302 Ceased WO2009068763A2 (fr) 2007-09-25 2008-09-17 Procede, dispositif et systeme de mesure de deformations a l'echelle nanometrique

Country Status (4)

Country Link
US (1) US8502143B2 (fr)
EP (1) EP2193360B1 (fr)
JP (1) JP5562243B2 (fr)
WO (1) WO2009068763A2 (fr)

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JP5160520B2 (ja) * 2009-09-25 2013-03-13 株式会社東芝 結晶格子モアレパターン取得方法および走査型顕微鏡
JP5420678B2 (ja) * 2009-12-11 2014-02-19 株式会社日立製作所 電子線バイプリズム装置および電子線装置
US20140197312A1 (en) * 2011-09-30 2014-07-17 Hitachi, Ltd. Electron microscope and sample observation method
JP2013096900A (ja) * 2011-11-02 2013-05-20 Jeol Ltd 透過電子顕微鏡および透過電子顕微鏡像の観察方法
JP6173862B2 (ja) * 2013-09-30 2017-08-02 株式会社日立ハイテクノロジーズ 電子顕微鏡
US9703211B2 (en) 2014-10-16 2017-07-11 University Of Utah Research Foundation Sub-diffraction-limited patterning and imaging
US10170274B2 (en) * 2015-03-18 2019-01-01 Battelle Memorial Institute TEM phase contrast imaging with image plane phase grating
WO2016149676A1 (fr) 2015-03-18 2016-09-22 Battelle Memorial Institute Masques à faisceau d'électrons pour des capteurs de compression
US9551674B1 (en) 2015-10-30 2017-01-24 GlobalFoundries, Inc. Method of producing an un-distorted dark field strain map at high spatial resolution through dark field electron holography
WO2017189212A1 (fr) 2016-04-29 2017-11-02 Battelle Memorial Institute Spectroscopie à balayage comprimé
JP6718782B2 (ja) * 2016-09-21 2020-07-08 日本電子株式会社 対物レンズおよび透過電子顕微鏡
US10295677B2 (en) 2017-05-08 2019-05-21 Battelle Memorial Institute Systems and methods for data storage and retrieval
JP2019007910A (ja) * 2017-06-28 2019-01-17 株式会社東芝 結晶解析装置及び結晶解析方法
FR3073956B1 (fr) 2017-11-22 2019-12-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Methode d'acquisition d'hologrammes par holographie electronique hors axe optique en mode precession
JP7065503B2 (ja) * 2018-03-22 2022-05-12 国立研究開発法人理化学研究所 干渉光学系ユニット，荷電粒子線干渉装置、及び荷電粒子線干渉像観察方法
US10784078B2 (en) * 2018-10-31 2020-09-22 Bruker Axs Gmbh Electron diffraction imaging system for determining molecular structure and conformation
CN112179762A (zh) * 2020-03-05 2021-01-05 成都迪泰科技有限公司 双棱镜辅助测量金属丝的杨氏模量
US11460419B2 (en) * 2020-03-30 2022-10-04 Fei Company Electron diffraction holography

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Also Published As

Publication number Publication date
EP2193360A2 (fr) 2010-06-09
US8502143B2 (en) 2013-08-06
US20100252735A1 (en) 2010-10-07
WO2009068763A2 (fr) 2009-06-04
WO2009068763A4 (fr) 2009-09-11
JP2010540895A (ja) 2010-12-24
EP2193360B1 (fr) 2014-11-05
JP5562243B2 (ja) 2014-07-30

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