WO2009082985A1 - A system and process for processing the substrate in the chamber - Google Patents

A system and process for processing the substrate in the chamber Download PDF

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Publication number
WO2009082985A1
WO2009082985A1 PCT/CN2009/070004 CN2009070004W WO2009082985A1 WO 2009082985 A1 WO2009082985 A1 WO 2009082985A1 CN 2009070004 W CN2009070004 W CN 2009070004W WO 2009082985 A1 WO2009082985 A1 WO 2009082985A1
Authority
WO
WIPO (PCT)
Prior art keywords
workpiece
chemical
chamber
spray plate
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2009/070004
Other languages
English (en)
French (fr)
Inventor
Chunwah Fan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Anwell Digital Machinery Co Ltd
Original Assignee
Dongguan Anwell Digital Machinery Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/968,188 external-priority patent/US20090169341A1/en
Application filed by Dongguan Anwell Digital Machinery Co Ltd filed Critical Dongguan Anwell Digital Machinery Co Ltd
Priority to CN2009801013970A priority Critical patent/CN101960562B/zh
Priority to BRPI0906628-4A priority patent/BRPI0906628A2/pt
Priority to AU2009203106A priority patent/AU2009203106B2/en
Priority to EP09700094A priority patent/EP2234143A4/en
Publication of WO2009082985A1 publication Critical patent/WO2009082985A1/zh
Priority to IN4057CHN2010 priority patent/IN2010CN04057A/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Definitions

  • This invention relates to the field of manufacturing solar panels. In particular, it relates to the design of a cavity for processing a substrate or workpiece and a method of processing the same. Background technique
  • Solar energy is considered the cleanest source of energy. Collecting solar energy does not pollute the environment, and it would be cost effective to convert it properly. At present, most of them use solar panels to collect solar energy. Although there are many ways to make solar panels, the demand for large-area solar panels is increasing due to efficiency and cost. From a manufacturing point of view, the larger the area of the solar panel, the more difficult it is to maintain the efficiency of the solar panel.
  • the present invention discloses a technique for processing a workpiece in a cavity. While the treated workpieces of the present invention can be used in the manufacture of solar panels, these techniques are equally applicable to other portions or other applications to those skilled in the art. Summary of the invention
  • the present invention provides a device suitable for processing a substrate, wherein the substrate or workpiece is used to fabricate a solar panel.
  • a process chamber includes an opening for receiving at least one chemical; a platform having a plurality of workpiece holders for holding a plurality of workpieces vertically; a plurality of heaters, each The heater is disposed between two of the workpieces; a plurality of deposition devices, each of the deposition devices being disposed between the two workpieces.
  • each workpiece is located between one of the heaters and one of the deposition devices, wherein each of the deposition devices includes at least two spray plates provided with holes through which chemicals can pass Spray onto the workpiece.
  • a processing system in accordance with another aspect of the invention, includes an inlet and outlet chamber, a transfer chamber, and one or more process chambers.
  • the access chamber is for receiving a workpiece to be processed or disposed in one or more chambers.
  • the transfer chamber acts as a mechanism for moving the workpiece from one chamber to another.
  • the process chamber includes a set of electrodes for processing the workpiece with other materials.
  • the process chamber is capable of housing a platform on which workpieces are placed, each of which is placed vertically between a pair of said electrodes. Thus, all of the workpieces and the platform can move together, for example, together from one chamber to another.
  • the platform may comprise one or more workpiece holders, wherein all workpieces may be lifted up by one of the workpiece holders, or each workpiece may be lifted by one of the workpiece holders . Also included is a moving mechanism for conveniently moving the platform or the workpiece holder from one chamber to another.
  • the moving mechanism includes: a drum, a roller that rolls on the rail, a conveying device, a support block, and a robot arm.
  • the moving mechanism can move the workpiece holder to a designated chamber by mechanical action.
  • Embodiments of the invention may be a method, a device, a system or a part of a system.
  • the invention is a system for processing a workpiece.
  • the system includes: an opening a chamber for receiving at least one chemical; a platform comprising a plurality of workpiece holders for holding a plurality of workpieces vertically; a plurality of heaters, each of the heaters being placed on two workpieces And; a plurality of deposition devices, each of the deposition devices being located between the two workpieces.
  • each workpiece is located between one of the heaters and one of the deposition devices, wherein each of the deposition devices includes at least two spray plates provided with holes through which chemicals can pass Spray onto the workpiece.
  • the heater is grounded and the deposition device is coupled to a source of radio frequency, thereby creating an electromagnetic field to excite chemical deposits on the workpiece.
  • the holes in the air jet plate gradually increase from the top to the bottom of the spray plate.
  • the present invention is a system for processing a workpiece in a chamber, the system comprising: a transfer station, wherein the workpiece is vertically held by a workpiece clamp, the transfer station including a transport mechanism Rotating table; at least one process chamber.
  • the transfer mechanism of the transfer station is used to transfer the workpiece holder and workpiece into the chamber for processing.
  • the invention can be used in a variety of applications, such as in Plasma Enhanced Chemical Vapor Deposition (PECVD), a process used primarily on substrates to deposit from a gaseous state to a solid film.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • Figure 1 is an exemplary structure of one embodiment of the present invention.
  • FIGS. 2A and 2B are front and cross-sectional views, respectively, of a process chamber that can be used in the structure of Fig. 1 including a workpiece holder.
  • 3A and 3B are process chambers respectively containing a plurality of workpiece holders that can be used in the structure shown in FIG. Front view and section view of the room.
  • FIGS. 4A and 4B are front and cross-sectional views, respectively, of a process chamber that can be used in the structure of Fig. 1 to include a workpiece holder having rollers that roll on a set of tracks.
  • Figure 5 is an exemplary construction of a transfer device for transferring a workpiece holder from one chamber to another.
  • 6A and 6B are front and cross-sectional views, respectively, of a process chamber including a workpiece holder having a set of support blocks.
  • Figure 7 is a schematic illustration of the mechanical mechanism (e.g., robotic arm) lifting the workpiece holder and moving from one chamber to the other.
  • the mechanical mechanism e.g., robotic arm
  • 8A and 8B are front and cross-sectional views, respectively, of a linear array of tubular or rod electrodes.
  • Figure 9A is one embodiment of a process chamber for processing a flat substrate.
  • Fig. 9B shows an embodiment of a spray plate through which a reactive gas is sprayed onto a substrate to be processed.
  • Figure 9C is a cross-sectional view of deposition apparatus 904 with an active gas sprayed onto the substrate to be processed through an exemplary spray plate.
  • Figure 9D is another embodiment of a process chamber for processing a flat substrate.
  • Figure 1 OA and Figure 10B are two additional embodiments of a process chamber for processing a flat substrate, respectively.
  • Figures 11A and 11B are respectively two other embodiments of a process chamber for processing a flat substrate.
  • Fig. 12A is another embodiment of a spray plate through which an active gas is sprayed onto a substrate to be processed.
  • Figure 12B is a cross-sectional view of a deposition apparatus including a spray plate 1232.
  • Fig. 12C is still another embodiment of the spray plate through which the reactive gas is sprayed onto the substrate to be processed.
  • Figure 12D is a cross-sectional view of a deposition apparatus including a spray plate 1252.
  • Fig. 12E shows still another embodiment of the spray plate through which the reactive gas is sprayed onto the substrate to be processed.
  • Figure 12F is a cross-sectional view of a deposition apparatus including a spray plate 1272. detailed description
  • Figure 1 is an exemplary structure 100 of one embodiment of the present invention.
  • the structure 100 includes a transfer chamber 105, one or more process chambers (only three representative chambers 102, 103, and 104 are illustrated) and one or more inlet and outlet chambers (only one illustrated Represents the chamber 101).
  • the access chamber is for receiving an item or workpiece and is ready to load the item or workpiece into the process chamber.
  • the transfer chamber 105 includes a rotary table 11 3 that is rotatable to align with one of the process chambers to handle a workpiece.
  • the process chamber The chambers can be designed to be the same or different in order to handle each workpiece differently. For example, all of the process chambers that can be used can be used to process workpieces simultaneously to increase throughput. If a set of workpieces needs to be treated with two different components of chemicals, each of the process chambers can be placed with a different chemical.
  • the first chemical can be used to treat the workpiece in the first of the process chambers
  • the second chemical can be used to treat the workpiece in the second process chamber
  • the transfer chamber 105 can be used Transferring workpieces from the first process chamber to the second process chamber.
  • a set of workpieces are movably disposed within a platform that can be moved in or out of the chamber by a moving mechanism.
  • the platform includes at least one workpiece holder 110 that can be loaded into one of the process chambers through a transfer chamber 105. After the workpiece has been processed, the workpiece is unloaded from the process chamber onto the rotary table 113 of the transfer chamber 105. The rotary table 11 3 is then rotated to a designated chamber (e.g., another of the process chambers or into and out of the chamber 101) and the workpiece holder is transferred to a designated chamber.
  • the platform can be designed in different forms. Some exemplary platforms are described below.
  • the process chamber 200 is a chamber having an opening at one end. The opening acts as a mechanism for receiving the workpiece to be processed.
  • a plurality of electrodes are arranged in parallel.
  • RF radio frequency
  • the ground electrode 207 and the RF electrode 208 are vertically arranged, but are parallel to each other with a small gap therebetween.
  • six workpieces 209 are placed in one of the radio frequency electrodes and one of the Between the ground electrodes.
  • a front surface of the workpiece faces the radio frequency electrode, and a front surface of the workpiece is a surface to be processed.
  • the back surface of the workpiece is close to the ground electrode, and the back surface of the workpiece is a transport surface.
  • Mechanical operation is difficult due to the small gap between the back surface of the workpiece and the ground electrode. Therefore, in order to obtain the space required to carry the workpiece, the electrode must be removed by complicated mechanical operations, and thus it is necessary to form a large-sized process chamber.
  • At least one of the electrodes is provided with a plurality of outlets through which the process chamber can be filled with a gas (e.g., a reactive gas) or a chemical component.
  • a gas e.g., a reactive gas
  • the outlet is distributed or arranged on a surface of the radio frequency electrode opposite the ground electrode. Therefore, when a workpiece is inserted between the RF electrode and the ground electrode, the gas or the chemical component can effectively process the workpiece.
  • the stage includes the workpiece holder 210 and a set of rollers 21 1 , wherein the workpiece holder 210 is located on the drum 21 1 .
  • the workpiece holder can hold a plurality of workpieces.
  • the workpiece holder 210 includes six sets of holding devices 212, each of which holds a workpiece to be processed in the process chamber 200.
  • Figure 2B clearly illustrates a pair of holding devices 212 holding the workpiece 209.
  • the workpiece holder 210 can move all of the held workpieces simultaneously into or out of the process chamber, or simultaneously between the process chambers.
  • FIG. 3A and 3B are front and cross-sectional views, respectively, of the process chamber 300, the process chamber 300 including a plurality of workpiece holders.
  • the platform includes the plurality of workpiece holders, the specific number of workpiece holders being dictated by the size of the chamber 300.
  • Each of the workpiece holders is located on a set of rollers 31 1 .
  • the workpiece holders 31 0 hold the workpiece 309
  • the front view of the workpiece holders 31 0 can be regarded as shown in FIG. 3A .
  • One of the six workpiece fixtures As shown in Fig. 3B, it is worth noting that each of the workpiece holders is located on a set of rollers 31 1 .
  • Each workpiece can be moved individually or together if desired.
  • the transfer chamber 105 To transfer the workpiece holder 210 or the workpiece holder 310 from the process chamber 200 or the process chamber 300 or the inlet and outlet chamber 101 to the transfer chamber 105, the transfer chamber 105 The rotary table 113 rotates until the drum of the transfer chamber 105 and the process chamber 200 or the drum of the inlet and outlet chamber 101 are aligned. After alignment, the drum is activated and the workpiece holder is moved in or out of the process chamber 200 or the inlet and outlet chamber 101. When the workpiece holder reaches a designated position within the transfer chamber 105, the drum stops rolling.
  • the workpiece holder is moved by an array of rollers or a group of rollers.
  • Other moving mechanisms can also be used for mobile platforms or workpiece holders, depending on the particular implementation.
  • One embodiment of the moving mechanism utilizes a track to transport a workpiece.
  • 4A and 4B which are front and cross-sectional views, respectively, of the process chamber 400
  • the process chamber 400 includes a workpiece holder 410 that rolls on a set of rails 411 with rollers 413. Similar tracks can be used in the access chamber and the transfer chamber to transfer the workpiece holder 410 from one chamber to the other.
  • another set of rails can be mounted for stably guiding the movement of the workpiece holder 410.
  • FIG. 5 illustrates an exemplary structure 500.
  • the structure 500 transfers the workpiece holder from one chamber to the other with a transport device 512.
  • the structure 500 includes a transfer chamber 505, one or more process chambers (only three representative chambers 502, 503, and 504 are illustrated) and one or more Entering and exiting the chamber (only one representative 501 is shown in the figure).
  • the transfer device to move the workpiece holder from one chamber to another, extends to a workpiece holder in one of the chambers and is coupled to the workpiece holder.
  • the transmission device is a mechanical arm. Assuming that the track and the rotating table 513 are aligned, when the robot arm connected to the workpiece holder is retracted to another chamber (for example, a transfer chamber), the workpiece holder is horizontally along the track. Remove from one chamber and move into another chamber (for example, a transfer chamber). Said After the workpiece holder is moved to the transfer chamber, the rotary table rotates until the track of the rotary table is aligned with the target chamber. The robotic arm extends toward the target chamber. Thus, the workpiece holder is transferred from the transfer chamber to the target chamber. After the workpiece holder is placed to the designated position, the robot arm and the workpiece holder are separated and retracted.
  • the workpiece is moved by the robot.
  • 6A and 6B illustrate front and cross-sectional views, respectively, of a process chamber 600 incorporating a workpiece holder 610.
  • the workpiece holder 610 is placed on a set of support blocks 611 for providing a space for a robot (e.g., a lifting mechanism) to extend to the bottom of the workpiece holder 610.
  • the lifting mechanism lifts the workpiece holder 610 and retracts to the center of the transfer chamber.
  • the workpiece holder is lifted and transferred to the transfer chamber.
  • the lifting mechanism holding the workpiece holder rotates until the workpiece holder and the process chamber Or the inlet and outlet chambers are aligned.
  • the lift mechanism 712 extends to a designated chamber.
  • the lifting mechanism is lowered to place the workpiece holder in the designated chamber.
  • the lift mechanism is then retracted from the designated chamber to the transfer chamber.
  • FIG. 8A and 8B Another embodiment is illustrated in Figures 8A and 8B.
  • the RF electrode 808 and the ground electrode 807 are alternately arranged along the flat surface of the workpiece 809.
  • a workpiece placed between the RF electrode 808 and the array of ground electrodes 807 is held by the workpiece holder 810.
  • the workpiece holder 810 on the drum 811 allows the workpiece to be placed in a narrow gap between the pair of electrode arrays.
  • Figure 9A illustrates an exemplary process chamber 900, which in one embodiment is used to process a workpiece.
  • the process chamber 900 includes at least one workpiece holder 902 for holding the workpiece 901 vertically.
  • One advantage of holding the workpiece vertically is to minimize the particles falling on the workpiece Things (such as: dust and deposit material residues).
  • the process chamber 900 includes a deposition device 904, a heater 906, and at least one outlet 903 for releasing the residue.
  • the deposition device 904 includes an opening 910; at least one spray plate 908 through which some chemicals (eg, air, nitrogen, or various gases) can be supplied to the site.
  • the spray plate 908 includes an array of holes facing the workpiece.
  • the chemical can be translated into the process chamber 900 or sprayed onto the workpiece through a hole in the spray plate 908. Any remaining or residual chemicals can be translated through the outlet 903.
  • the outlet 903 can be used to balance the pressure in the process chamber 900.
  • the outlet 903 is coupled to a pump (not shown) for translation or release of a chemical that may remain or remain for processing the workpiece.
  • the heater 906 is grounded and the spray plate 908 is coupled to a source of radio frequency. Since a potential difference or an electromagnetic field is formed between the heater 906 and the spray plate 908, the chemical is excited and deposited onto the workpiece between the heater 906 and the spray plate 908.
  • an array of holes is designed on the spray plate 908 for translating chemicals from the deposition device 904. Placed in the process chamber 900.
  • Figure 9C illustrates a cross-sectional view of the deposition apparatus 904.
  • the deposition apparatus 904 includes two spray plates similar to the spray plate 920.
  • the deposition device 904 is placed between two workpieces. Therefore, chemicals can be simultaneously deposited onto the two workpieces through the two spray plates.
  • An integrated deposition apparatus 944 is used in another embodiment as shown in Figure 9D.
  • the integrated deposition apparatus 944 includes two separate chambers or channels, each of which is from a supply source 950 or 951 of the deposition apparatus and a spray plate ( Figure 9B). Show) accepting chemicals.
  • the embodiment shown in Fig. 10A is a structure without the deposition apparatus.
  • the heater 1006 is placed beside the workpiece 1001. Chemicals may be deposited within the process chamber 1000 through the opening 1010. Likewise, any chemical residue can be translated through the outlet 1003. Additionally, the outlet 1003 can be used to balance the pressure in the process chamber 1000. In one embodiment, the outlet 903 is coupled to a pump (not shown) to facilitate translation of the pressure in the chamber 1 000 or to dissipate any remaining or residual processing chambers.
  • the deposition apparatus 1004 is placed between the heaters.
  • the deposition apparatus 1 004 can be coupled to a radio frequency source, and the heater 1 006 can be grounded to excite chemicals in the chamber 1000.
  • the workpiece holder 11 02 holds the workpiece 1101. Chemical substances are ejected through the openings of the spray plate 1108. In another embodiment, as shown in Figure 11B, chemicals are ejected through the opening 1125 of the chamber 1120. As shown in Figures 11A and 11B, the deposition apparatus 1104 and 1124 can be coupled to a radio frequency source that can be grounded to excite chemicals in the chamber 1100 or 1120.
  • the spray plate 1232 is provided with a row of holes which gradually increase from the top to the bottom of the spray plate.
  • the hole at the bottom of the spray plate 1232 is larger than the hole at the top of the spray plate 1232.
  • the chemical provided by the opening 910 can be deposited more evenly onto the workpiece through the holes by the enlarged holes along the surface of the spray plate 1232.
  • Figure 12B illustrates a cross-sectional view of the deposition apparatus incorporating the spray plate 1232.
  • the spray plate 1252 is provided with a row of holes which gradually increase from one end to the other end of the spray plate 1252.
  • the hole at the end of the spray plate 1252 is larger than the hole at the other end of the spray plate 1252.
  • Fig. 12D illustrates a cross-sectional view of the deposition apparatus including the ejection plate 1252, wherein the ejection plate opening 1251 is located at one end of the smaller hole.
  • Fig. 12E the spray plate 1272 is provided with a row of holes which gradually increase from the inside to the outside.
  • Fig. 12F illustrates a cross-sectional view of the deposition apparatus including the ejection plate 1272, which is located at the center of the side of the ejection plate 1272, and has a small hole at the center.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • PECVD is a process mainly used on a substrate to deposit a gaseous film into a solid film.
  • Another embodiment is used in Chemical Vapor Deposition (CVD), wherein the deposition apparatus is not powered, or has no such deposition apparatus.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

在腔室中处理基片的方法及系统
相关参考申请
本发明是美国专利申请号： 11/968， 188 , 申请日为 2008年 1月 1日， 标题为 "Method and system for handling objects in chambers" ( "在腔室中搬运工件的方 法及系统" ） 的专利申请的部分延续申请。 技术领域
本发明涉及制造太阳电池板的领域。 具体地涉及用于处理基片或工件的腔 体的设计及其处理方法。 背景技术
太阳能被认为是最洁净的能源。 收集太阳能不会污环境， 而且， 如果转化合 理将会有成本效益。 目前， 大都是釆用太阳能电池板来收集太阳能。 尽管，制造 太阳板的方法有很多， 但是， 由于效率和成本的原因， 大面积太阳能电池板的 需求不断增加。 从制造的角度看， 太阳能电池板的面积越大， 越难保持太阳能 电池板的效率。
因而， 需要一个更好的制造过程。 本发明公开了一种在腔体中处理工件的 技术。 尽管本发明中经过处理的工件可应用于制造太阳能电池板中， 但是， 对 于本领域的技术人员来说， 这些技术同样适用于其他的部分或有其他的应用。 发明内容
本部分的目的在于对本发明的一些方面作出总结， 并且简要地介绍一些较 佳的实施例。 为了避免本部分的目的、 摘要和标题难以理解， 摘要或说明书标 题作出了简化或省略。 这些简化或省略并不是要限制本发明的范围。 一般地， 本发明提供了一种装置， 所述装置适用于处理基片， 其中， 所述 基片或工件用于制造太阳能电池板。 根据本发明的一个方面， 工艺腔室包括开 口， 用于接收至少一种化学物质； 平台， 设有复数个工件夹具， 所述工件夹具 用于垂直持有复数个工件； 复数个加热器， 每个所述加热器设于两个所述工件 之间； 复数个沉积装置， 每个所述沉积装置设于两个所述工件之间。 因而， 每 个工件都位于一个所述加热器和一个所述沉积装置之间， 其中， 每个所述沉积 装置包括至少两个设有孔的喷射板， 化学物质可通过所述两个喷射板喷射到工 件上。
根据本发明的另一个方面， 处理系统包括进出腔室、 传输腔室和一个或多个 工艺腔室。 所述进出腔室用于接收要在一个或多个腔室中处理或处置的工件。 所述传输腔室用作一种将工件从一个腔室移动到另一个腔室的机构。 所述工艺 腔室包括一组电极， 所述电极用于以其他材料来处理工件。 所述工艺腔室能容 纳一个平台， 所述平台上放置有工件， 每个所述工件垂直地置于一对所述电极 之间。 因此， 所有工件和所述平台可一起移动， 例如， 一起从一个腔室移动到 另一个腔室。 根据具体的实施方式， 所述平台可以包括一个或复数个工件夹具， 其中， 所有工件可以由一个所述工件夹具活动地举起， 或每个工件可以分别由 一个所述工件夹具活动地举起。 还包括移动机构， 所述移动机构用于将所述平 台或所述工件夹具方便地从一个腔室移动到另一个腔室。
根据本发明的另一方面， 所述移动机构包括： 滚筒、 在轨道上滚动的滚轮、 传输装置、 支撑块及机械臂。 通过机械动作， 所述移动机构可将所述工件夹具 移动到指定的腔室。
本发明的实施方式可以是一种方法、 一种装置、 一个系统或系统的一部分。 根据一个实施例， 本发明是一个处理工件的系统。 所述系统包括： 设有开口的 腔室， 所述开口用于接收至少一种化学物质； 平台， 包括有复数个用于垂直持 有复数个工件的工件夹具； 复数个加热器， 每个所述加热器置于两个工件之间； 以及， 复数个沉积装置， 每个所述沉积装置位于两个工件之间。 因而， 每个工 件都位于一个所述加热器和一个所述沉积装置之间， 其中， 每个所述沉积装置 包括至少两个设有孔的喷射板， 化学物质可通过所述两个喷射板喷射到工件上。 在一个实施例中， 所述加热器接地， 而所述沉积装置与射频源连接， 因而产生 了电磁场， 以激发化学物质沉积在工件上。 所述喷气板上的孔自所述喷射板的 顶部到底部逐渐增大。
根据另一个实施例，本发明是一种在腔室中处理工件的系统，所述系统包括： 传输台， 其中， 工件被工件夹具分隔的垂直地持有， 所述传输台包括安装有传 输机构的旋转台； 至少一个工艺腔室。 所述传输台的所述传输机构用于将所述 工件夹具和工件传输到腔室中进行处理。
本发明可以有多种应用， 例如应用到等离子增强化学气相沉积 （Plasma Enhanced Chemical Vapor Deposition ,PECVD ) 中， PEC VD是一个主要用在基片 上， 从气态沉积为固态薄膜的过程。 附图说明
通过下面的描述、 权利要求及附图， 本发明的特征及优点， 将得到更好的 理解。
图 1为本发明的一个实施例的示范结构。
图 2A和图 2B分别为可用于图 1所示结构中包含有一个工件夹具的工艺腔室 的前视图和剖面图。
图 3A和图 3B分别为可用于图 1所示结构中的包含有多个工件夹具的工艺腔 室的前视图和剖面图。
图 4A和图 4B分别为可用于图 1所示结构中的包含有一个具有在一组轨道上 滚动的滚轮的工件夹具的工艺腔室的前视图和剖面图。
图 5为釆用传输装置将工件夹具从一个腔室传输到另一个腔室的示范结构。 图 6A和图 6B分别为包含有一个设有一组支撑块的工件夹具的工艺腔室的前 视图和剖面图。
图 7为釆用机械机构 （如， 机器臂）将工件夹具抬起， 并从一个腔室移动到 另一个腔室的示意图。
图 8A和图 8B分别为线性阵列的管状或棒状电极的前视图和剖面图。
图 9 A为用于处理平板基片的工艺腔室的一个实施例。
图 9B为喷射板的一个实施例， 活性气体通过所述喷射板喷射到要进行处理 的基片上。
图 9C为沉积装置 904的剖面图， 活性气体通过一个示范性的喷射板喷射到要 进行处理的基片上。
图 9D为用于处理平板基片的工艺腔室的另一个实施例。
图 1 OA和图 10B分别为用于处理平板基片的工艺腔室的另外两个实施例。 图 11 A和图 11B分别为用于处理平板基片的工艺腔室的另外两个实施例。 图 12A为喷射板的另一个实施例， 活性气体通过所述喷射板喷射到要进行处 理的基片上。
图 12B为包含有喷射板 1232的沉积装置的剖面图。
图 12C为喷射板的又一个实施例， 活性气体通过所述喷射板喷射到要进行处 理的基片上。
图 12D为包含有喷射板 1252的沉积装置的剖面图。 图 12E为喷射板的再一个实施例， 活性气体通过所述喷射板喷射到要进行处 理的基片上。
图 12 F为包含有喷射板 1272的沉积装置的剖面图。 具体实施方式
本发明的细节描述主要表述为程序、 步骤、 逻辑模块、 过程或其他代表符 号。 这些表述直接地或间接地展示了在腔室中处理工件的过程。 本领域的技术 人员能把这些描述和代表最有效移植到他们的工作中。
在此参考的"一个实施例"或"一实施例"表示特定的一个实施例里的特征、 结 构或特性可涵盖至少一个本发明中的实施例。 说明中在不同的地方出现的短语 "一个实施例" ， 并不需要全部参考其相同实施例， 也不独立或优选于其它实 施例。 此外， 本发明中一个或多个实施例中描述的工序流程图、 图解或序号并 不固定地指代任何特定的顺序或暗示任何对本发明的限制。
参考图 1-9D, 在此对本发明的实施例进行说明。 本领域的技术人员容易理 解到对所述附图所作出的对应的描述是为了对本发明作出说明， 而实际上本发 明不局限于这些实施例的描述。
参考附图时， 附图中类似的元件标号代表类似的元件。 图 1为本发明的一个 实施例的示范结构 100。所述结构 100包括传输腔室 105 ,—个或多个工艺腔室（只 图示了 3个代表性的腔室 102、 103和 104 )和一个或多个进出腔室 （只图示了一 个代表腔室 101 ) 。 顾名思义， 所述进出腔室用于接收物件或工件， 并准备好将 所述物件或工件装载到所述工艺腔室。
根据一个实施例， 所述传输腔室 105包括旋转台 11 3 , 所述旋转台可旋转至 与其中一个所述工艺腔室对齐以装卸工件。 根据具体的实施方式， 所述工艺腔 室可设计成相同的或不同的， 以便对每个工件进行不同的处理。 例如， 所有可 使用的所述工艺腔室可同时用于处理工件， 以增加产量。 如果一组工件需要用 两种不同组分的化学物质处理， 则每个所述工艺腔室可放置不同的化学物质。 因而， 可在第一个所述工艺腔室中使用第一种化学物质处理工件， 而在第二个 工艺腔室中使用第二种化学物质处理工件， 其中， 所述传输腔室 105可用于将工 件从所述第一个工艺腔室传输到所述第二个工艺腔室。
在一个示范性操作中， 一组工件可移动地置于平台内， 所述平台可通过移 动机构从腔室中移进或移出。 所述平台包括至少一个工件夹具 110 , 所述工件夹 具 110可通过传输腔室 1 05装载到一个所述工艺腔室。 工件处理完后， 所述工件 从所述工艺腔室卸载到所述传输腔室 1 05的旋转台 11 3上。 则所述旋转台 11 3旋转 至指定的腔室 （例如： 另一个所述工艺腔室或进出腔室 101 ) , 并将所述工件夹 具传输到指定的腔室。 根据具体的实施方式， 所述平台可以设计成不同的形式。 下面描述了一些示范性的平台。
图 2A和图 2B分别为所述工艺腔室 200的前视图和剖面图。 根据一个实施例， 所述工艺腔室 200是一个一端有开口的腔室。 所述开口可作为一个接收要处理的 工件的机构。 在所述工艺腔室 200中， 平行排列了多个电极。 如图 2A所示的一个 实施例， 包括有三个射频（ Radio Frequency, RF )电极 208和四个地电极 207。 为 有效利用所述电极， 三个所述射频电极 208和四个所述地电极 207对称排列。 所 述电极对是彼此背对背排列的。 换句话说， 两组所述地电极对共享位于所述两 组所述接电极对中间的所述射频电极。 因此， 三个所述射频电极 208间隔交替排 列在四个所述地电极 207之间。
在一个实施例中， 所述地电极 207和所述射频电极 208垂直排列， 但相互平 行， 中间有一小间隙。 在图 2A所示的结构中， 在一个所述射频电极和一个所述 地电极之间， 放置有六个工件 209。 所述工件的前表面面向所述射频电极， 所述 工件的前表面为要进行处理的表面。 所述工件的背面靠近所述地电极， 所述工 件的背面是搬运面。 由于所述工件的背面和所述地电极之间的间隙艮小， 机械 操作很困难。 因此， 为了获得搬运工件所需的空间， 必须通过复杂的机械操作 移开所述电极， 因而需要形成一个大尺寸的工艺腔室。
根据另一个实施例， 至少一个电极上， 设置有许多出口， 通过所述出口可 给所述工艺腔室填充一种气体（例如， 反应气体）或一种化学组份。 所述出口 分布或安排在所述射频电极的表面与所述地电极相对。 因此， 当工件插入在所 述射频电极和所述地电极之间时， 所述气体或所述化学组分可有效地对工件进 行处理。
如图 2A和图 2B所示， 所述平台包括所述工件夹具 21 0和一组滚筒 21 1 , 其中， 所述工件夹具 21 0位于所述滚筒 21 1上。 为了能够并行般运工件， 所述工件夹具 可以持有多个工件。 如图 2A所示， 所述工件夹具 21 0包括六套持有装置 212 , 每 套所述持有装置 212持有一个要在所述工艺腔室 200中处理的工件。 图 2B明确的 图示了一对持有所述工件 209的持有装置 212。 所述工件夹具 21 0可使所有被持有 的工件同时移进或移出所述工艺腔室， 或同时在所述工艺腔室之间移动。
图 3 A和图 3B分别为所述工艺腔室 300的前视图和剖面图， 所述工艺腔室 300 包括多个工件夹具。 换句话说， 所述平台包括所述多个工件夹具， 所述工件夹 具的具体数量由所述腔室 300的尺寸而定。 每个所述工件夹具都位于一组滚筒 31 1上， 如图 3B所示， 所述工件夹具 31 0持有工件 309 , 所述工件夹具 31 0的前视 图可看成是图 3A中所示的六个工件夹具中的一个。 如图 3B所示， 值得注意的是， 每个所述工件夹具都位于一组滚筒 31 1上。 如果需要， 每个工件都可以单独或者 一起移动。 为将所述工件夹具 210或所述工件夹具 310从所述工艺腔室 200或所述工艺 腔室 300或所述进出腔室 101传输到所述传输腔室 105 , 所述传输腔室 105的旋转 台 113旋转， 直到所述传输腔室 105的滚筒和所述工艺腔室 200或所述进出腔室 101的滚筒对齐。 对齐后， 启动滚筒， 所述工件夹具会从所述工艺腔室 200或所 述进出腔室 101移进或移出。 当所述工件夹具到达所述传输腔室 105内的指定位 置后， 滚筒停止滚动。
如图 2A、 图 2B、 图 3A或图 3B所示， 所述工件夹具借助一个滚筒阵列或一组 滚筒移动。 根据具体的实施方式， 其他的移动机构也可用于移动平台或工件夹 具。 所述移动机构的一个实施例是利用轨道传输工件。 如图 4A和图 4B所示， 分 别为所述工艺腔室 400的前视图和剖面图， 所述工艺腔室 400包括用滚轮 413在一 组轨道 411上滚动的工件夹具 410。 在所述进出腔室和所述传输腔室中， 也可使 用类似的轨道，把工件夹具 410从一个腔室传输到另一个腔室。根据另一实施例， 在所述工艺腔室 400的天花板上， 可安装另一组轨道， 用以稳定的引导所述工件 夹具 410的移动。
图 5图示了一个示范结构 500。 所述结构 500釆用传输装置 512将工件夹具从 一个腔室传输到另一个腔室。 根据本发明的一个实施例， 所述结构 500包括传输 腔室 505 , —个或多个工艺腔室 （图中只图示了 3代表性的腔室 502、 503和 504 ) 和一个或多个进出腔室 （图中只图示了一个代表性的 501 ) 。
在一个实施例中， 为将所述工件夹具从一个腔室移动到另一个腔室， 所述 传输装置伸向一个所述腔室中的工件夹具， 并与所述工件夹具连接。 所述传输 装置为机械臂。 假设所述轨道和所述旋转台 513是对齐的， 当连接着所述工件夹 具的所述机器手臂退回另一腔室 （例如， 传输腔室） 时， 所述工件夹具就沿着 轨道水平地从一个腔室中移出， 并移进另一个腔室 （例如， 传输腔室） 。 所述 工件夹具被移动到所述传输腔室后， 所述旋转台旋转， 直到所述旋转台的轨道 和目标腔室对齐。 所述机械臂伸向所述目标腔室。 这样， 所述工件夹具就从所 述传输腔室传输到所述目标腔室。 当所述工件夹具被放置到指定位置后， 所述 机器臂和所述工件夹具分离并退回。
在另一个实施例中， 釆用机械手移动所述工件夹具。 图 6A和图 6B分别图示 了包含有工件夹具 610的工艺腔室 600的前视图和剖面图。 所述工件夹具 610置于 一组支撑块 611上， 所述支撑块 611用于提供一个空间， 让机械手 （例如一个提 升机构） 可伸展到所述工件夹具 610的底部。 所述提升机构抬升所述工件夹具 610, 并退回到所述传输腔室的中央。 这样， 所述工件夹具被抬起， 并传输到所 述传输腔室。
为将所述工件夹具从所述传输腔室移动到所述工艺腔室或所述进出腔室， 所述持有所述工件夹具的提升机构旋转， 直到所述工件夹具与所述工艺腔室或 所述进出腔室对齐。 如图 7所示， 所述提升机构 712伸展到指定的腔室。 当所述 工件夹具到达指定腔室的指定位置时， 所述提升机构下降， 把所述工件夹具放 置在指定的腔室。 所述提升机构再从指定的腔室退回到所述传输腔室。
图 8A和图 8B展示了另一个实施例。 在这个实施例中， 沿着工件 809的平板表 面， 所述射频电极 808及所述地电极 807间隔交替地排列。 通过所述工件夹具 810 将置于所述射频电极 808和所述地电极 807阵列之间的工件持有。 所述位于滚筒 811上的所述工件夹具 810使得所述工件可置于所述一对电极阵列之间的狭小间 隙内。
图 9A图示了一个示范工艺腔室 900, 在一个实施例中， 所述工艺腔室用于处 理工件。 所述工艺腔室 900包括至少一个工件夹具 902 , 所述工件夹具 902用于垂 直持有工件 901。 垂直持有工件的一个优点是尽可能减少落在所述工件上的颗粒 物（如： 灰尘和沉积材料残余物）。进一步， 所述工艺腔室 900包括沉积装置 904、 加热器 906和至少一个用于释放^ ^学残留物的出口 903。
如图 9A所示， 所述沉积装置 904包括开口 910; 至少一个喷射板 908 , 通过所 述喷射板 908 , —些化学物质 （如， 空气、 氮气或各种各样的气体）可以供应给 所述沉积装置 904。 所述喷射板 908包括面向工件的孔阵列。 通过所述喷射板 908 上的孔， 所述化学物质可译放到所述工艺腔室 900或者喷射到工件上。 任何剩余 的或残留的化学物质可通过所述出口 903译放。 另外， 所述出口 903可用于平衡 所述工艺腔室 900中的压力。 在一个实施例中， 所述出口 903与泵相连（未图示 出） ， 以便译放压力或译放可能剩余的或残留的用于处理工件的化学物质。
根据一个实施例， 所述加热器 906接地， 所述喷射板 908和射频源相连。 由 于所述加热器 906和所述喷射板 908之间形成电势差或电磁场， 所述化学物质被 激发并沉积到位于所述加热器 906和所述喷射板 908之间的工件上。
为了保证化学物质均勾地沉积在工件表面上， 如图 9B所示， 在一个实施例 中， 在所述喷射板 908上设计了一个孔阵列， 用于将化学物质从所述沉积装置 904译放到所述工艺腔室 900中。 图 9C图示了所述沉积装置 904的剖面图。
如图 9A所示的一个实施例中， 所述沉积装置 904包括两个类似喷射板 920的 喷射板。 所述沉积装置 904置于两个工件之间。 因此， 化学物质可通过所述两个 喷射板同时沉积到两个工件上。 如图 9D所示的另一个实施例中使用了一个集成 的沉积装置 944。 如图 9D所示， 所述集成的沉积装置 944包括两个独立的腔室或 通道，每个所述腔室或通道都从所述沉积装置的供应源 950或者 951和喷射板（如 图 9B所示）接受化学物质。
如图 10A所示的实施例为一个没有所述沉积装置的结构。 所述加热器 1006置 于工件 1001的旁边。 化学物质可通过所述开口 1010在所述工艺腔室 1000内沉积。 同样， 任何化学残余物质可通过所述出口 1003译放。 另外， 所述出口 1003可用 于平衡所述工艺腔室 1000中的压力。在一个实施例中，所述出口 903与泵相连（未 图示出） ， 以便于译放所述腔室 1 000中的压力或译放可能剩余的或残留的用于 处理所述工艺腔室 1000中的工件的化学物质。 如图 10B所示， 所述沉积装置 1004 置于所述加热器之间。 所述沉积装置 1 004可与射频源连接， 所述加热器 1 006可 接地， 以激发所述腔室 1000中的化学物质。
如图 11A所示的实施例中， 所述工件夹具 11 02持有工件 1101。 化学物质通过 所述喷射板 1108的开口喷射。 如图 11B所示的另一个实施例中， 化学物质通过所 述腔室上 1120的所述开口 1125喷射。 如图 11A和图 11B所示， 所述沉积装置 1104 和 1124可与射频源连接， 所述加热器 1 106或 1126可接地， 以激发所述腔室 1100 或 1120中的化学物质。
如图 12A所示， 所述喷射板 1232上设有一排孔， 所述孔自所述喷射板的顶部 到底部逐渐增大。 换句话说， 位于所述喷射板 1232底部的孔比位于所述喷射板 1232顶部的孔大。 通过沿着所述喷射板 1232表面逐渐增大的孔， 由所述开口 910 提供的化学物质可通过所述孔更均匀的沉积到工件上。 为了完整， 图 12B图示了 包含有所述喷射板 1232的所述沉积装置的剖面图。
如图 12C所示， 所述喷射板 1252上设有一排孔， 所述孔自所述喷射板 1252的 从一端到另一端逐渐增大。 换句话说， 所述喷射板 1252—端的孔比所述喷射板 1252另一端的孔大。 同样地， 图 12D图示了包含有所述喷射板 1252的所述沉积装 置的剖面图， 其中， 所述喷射板开口 1251位于孔较小的一端。
如图 12E所示， 所述喷射板 1272上设有一排孔， 所述孔自内向外逐渐增大。 图 12F图示了包含有所述喷射板 1272的所述沉积装置的剖面图， 所述喷射开口 1271位于所述喷射板 1272—侧的中央， 中央的孔较小。 本发明揭示一种处理工件或在工件上沉积一种或者多种化学物质的系统。 本发明可以有多种应用， 如用化学物质处理工件。 例如， 本发明的一个实施例 可以有利地应用到等离子体气相沉积 （ Plasma Enhanced Chemical Vapor Deposition , PECVD ) 中。 PECVD是一个主要用在基片上， 从气态沉积为固态 薄膜的过程。另一实施例，用在化学气相沉积（ Chemical Vapor Deposition, CVD ) 中， 其中， 所述沉积装置没有加电源， 或没有所述沉积装置。
本发明描述的细节具有一定的特殊性。 对于本技术领域的普通技术人员来 说， 当前只以举例的方式公开了实施例， 在不脱离本发明原理的前提下， 还可 以做出若干改进和组合。 相应地， 本发明的保护范围应当由权利要求来确定， 而不是由上述具体实施例的描述来确定。

Claims

权 利 要 求
1.一种处理工件的系统， 包括：
腔室， 所述腔室包括：
开口， 用于接收至少一种化学物质；
平台， 包括至少一个工件夹具， 所述工件夹具用于垂直持有至少一个工件； 加热器， 所述加热器靠近所述工件的第一表面； 以及
出口， 用于译放剩余物或残留物， 以平衡所述腔室内的压力。
2.如权利要求 1 所述的系统， 其特征在于， 还包括沉积装置， 所述沉积装 置面向所述加热器。
3.如权利要求 2 所述的系统， 其特征在于， 所述沉积装置置于两个所述加 热器之间。
4.如权利要求 2 所述的系统， 其特征在于， 所述加热器接地， 所述沉积装 置与射频源相连， 以产生电磁场， 所述磁场激发所述化学物质沉积在所述工件 上。
5. 如权利要求 3所述的系统， 其特征在于， 所述加热器接地， 所述沉积装 置与射频源相连， 以产生电磁场， 所述磁场激发所述化学物质沉积在所述工件 上。
6. 如权利要求 2所述的系统， 其特征在于， 所述沉积装置包括喷射板， 所 述喷射板的表面设有面向所述加热器的孔， 所述化学物质通过所述喷射板喷射 到所述工件上。
7. 如权利要求 3所述的系统， 其特征在于， 所述沉积装置包括喷射板， 所 述喷射板的表面设有面向所述加热器的孔， 所述化学物质通过所述喷射板喷射 到所述工件上。
8.如权利要求 4 所述的系统， 其特征在于， 所述沉积装置包括喷射板， 所 述喷射板的表面设有面向所述加热器的孔， 所述化学物质通过所述喷射板喷射 到所述工件上。
9. 如权利要求 5所述的系统， 其特征在于， 所述沉积装置包括喷射板， 所 述喷射板的表面设有面向所述加热器的孔， 所述化学物质通过所述喷射板喷射 到所述工件上。
10. 如权利要求 6 所述的系统， 其特征在于， 所述孔自所述喷射板的顶部 到底部逐渐增大。
11. 如权利要求 7 所述的系统， 其特征在于， 所述孔自所述喷射板的顶部 到底部逐渐增大。
12. 如权利要求 8 所述的系统， 其特征在于， 所述孔自所述喷射板的顶部 到底部逐渐增大。
1 3. 如权利要求 9 所述的系统， 其特征在于， 所述孔自所述喷射板的顶部 到底部逐渐增大。
14. 如权利要求 7 所述的系统， 其特征在于， 每个所述沉积装置包括两个 化学腔室， 每个所述化学腔室用于接收至少一种化学成分， 所述化学成分来自 所述沉积装置的供应源， 每个所述化学腔室包括两个设有所述孔的所述喷射板 中的一个。
15. 如权利要求 9 所述的系统， 其特征在于， 每个所述沉积装置包括两个 化学腔室， 每个所述化学腔室用于接收至少一种化学成分， 所述化学成分来自 所述沉积装置的供应源， 每个所述化学腔室包括两个设有所述孔的所述喷射板 中的一个。
16. 如权利要求 11所述的系统， 其特征在于， 每个所述沉积装置包括两个 化学腔室， 每个所述化学腔室用于接收至少一种化学成分， 所述化学成分来自 所述沉积装置的供应源， 每个所述化学腔室包括两个设有所述孔的所述喷射板 中的一个。
17. 如权利要求 1 3所述的系统， 其特征在于， 每个所述沉积装置包括两个 化学腔室， 每个所述化学腔室用于接收至少一种化学成分， 所述化学成分来自 所述沉积装置的供应源， 每个所述化学腔室包括两个设有所述孔的所述喷射板 中的一个。
18. 如权利要求 9所述的系统， 其特征在于， 还包括：
传输腔室， 用于将所述工件移进或移出所述腔室；
另一腔室， 用于接收来自所述传输腔室的所述工件； 以及
采用滚筒进行传输的所述平台。
19. 如权利要求 9所述的系统， 其特征在于， 还包括：
传输腔室， 用于将所述工件移进或移出所述腔室；
另一腔室， 用于接收来自所述传输腔室的所述工件； 以及
釆用轨道进行传输的所述平台。
20. 如权利要求 9所述的系统， 其特征在于， 还包括：
传输腔室， 用于将所述工件移进或移出所述腔室；
另一腔室， 用于接收来自所述传输腔室的所述工件； 以及
机械臂， 用于将所述平台移进和移出所述腔室， 其中， 所述机械臂的功 包括：
抬升所述平台；
水平移动所述平台；
使所述平台绕垂直轴旋转。
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