WO2009096785A1 - Method and apparatus for plasma surface treatment of a moving substrate - Google Patents

Method and apparatus for plasma surface treatment of a moving substrate Download PDF

Info

Publication number
WO2009096785A1
WO2009096785A1 PCT/NL2009/050041 NL2009050041W WO2009096785A1 WO 2009096785 A1 WO2009096785 A1 WO 2009096785A1 NL 2009050041 W NL2009050041 W NL 2009050041W WO 2009096785 A1 WO2009096785 A1 WO 2009096785A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
web
mask
electrode
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/NL2009/050041
Other languages
French (fr)
Inventor
Bruno Alexander Korngold
Hindrik Willem De Vries
Eugen Aldea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Manufacturing Europe BV
Original Assignee
Fujifilm Manufacturing Europe BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Manufacturing Europe BV filed Critical Fujifilm Manufacturing Europe BV
Priority to EP09707047.8A priority Critical patent/EP2235735B1/en
Priority to US12/865,710 priority patent/US8702999B2/en
Priority to JP2010544903A priority patent/JP5597551B2/en
Publication of WO2009096785A1 publication Critical patent/WO2009096785A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/47—Generating plasma using corona discharges
    • H05H1/473—Cylindrical electrodes, e.g. rotary drums
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2240/00—Testing
    • H05H2240/10—Testing at atmospheric pressure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0393—Flexible materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0548—Masks
    • H05K2203/0557—Non-printed masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09—Treatments involving charged particles
    • H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/104—Using magnetic force, e.g. to align particles or for a temporary connection during processing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1173—Differences in wettability, e.g. hydrophilic or hydrophobic areas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/15—Position of the PCB during processing
    • H05K2203/1545—Continuous processing, i.e. involving rolls moving a band-like or solid carrier along a continuous production path
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1208—Pretreatment of the circuit board, e.g. modifying wetting properties; Patterning by using affinity patterns

Definitions

  • the present invention relates to a method for treatment of a substrate surface using an atmospheric pressure plasma, the method comprising providing an atmospheric pressure plasma in a treatment space between a first electrode and a second electrode, providing a substrate and a mask web in contact with the substrate, and applying a plasma generating power to the first and second electrode for treatment of surface areas of the substrate exposed by the mask web.
  • the present invention relates to a plasma treatment apparatus for treatment of a surface of a substrate, comprising a discharge electrode structure having a treatment space and comprising a first electrode and a second electrode, a power supply connected to the first electrode and the second electrode for generating an atmospheric pressure plasma in the treatment space, and a transport installation for transporting the substrate through the treatment space.
  • European patent publication EP 1 403 902 Al discloses a method for generating an atmospheric pressure glow discharge plasma using a dielectric barrier discharge electrode configuration. A drum shaped electrode is used, and the substrate film to be treated is guided along a part of the circumference of the drum shaped electrode.
  • the present invention seeks to provide an improved substrate treatment method and apparatus, which allow a substrate surface to be patterned in a continuous manner using an atmospheric pressure plasma.
  • a method according to the preamble defined above is provided, in which the substrate and mask web are moved synchronously through the treatment space. This allows to efficiently perform a plasma treatment of a substrate in the form of a moving substrate or a moving web in a continuous manner, such as in roll-to-roll treatment of webs.
  • the mask web is electrically conductive. This is advantageous in combination with the generated plasma for providing an optimum result (well defined plasma, and well defined mask openings to expose parts of the substrate).
  • the mask web may be grounded, at floating potential or at the same potential as the first electrode.
  • the substrate may be a roll to roll substrate, e.g. in the form of a polymer web.
  • Many materials used in various applications as basic material are provided as a roll-to-roll substrate. Using the present method, these may efficiently be plasma treated to obtain a semi-product for further production into a final product.
  • the mask web is a roll to roll mask web in a further embodiment. This allows to synchronize the movement of both substrate and mask to obtain as low as possible shifts between substrate and mask during treatment.
  • the mask web is a continuous mask web, (endless mask, loop of material), allowing to re-use pattern areas of the mask continuously.
  • the mask web is held in contact with the web by a magnetic force. This furthermore aids in maintaining the mask web and substrate in close contact, resulting in better defined structures on the substrate after treatment.
  • the method in a further embodiment, further comprises depositing a material on the treated substrate.
  • the material is an ink selected from the group consisting of a water based ink, a conductive ink, a gel based ink.
  • a substrate may be treated with a mask with very fine details, after which material may be deposited using the changed characteristics of the substrate after treatment.
  • ink treatment e.g. use can be made of hydrophobic/hydrophilic areas on the treated substrate.
  • the present invention relates to a plasma treatment apparatus according to the preamble defined above, in which the first electrode is arranged to receive, in operation, the substrate to be treated and a mask web in contact with the substrate, in which the transport installation is arranged to move the substrate and the mask web synchronously through the treatment space.
  • This apparatus is suitable for implementing the method according to the various embodiments of the present invention.
  • the transport installation comprises a roll to roll assembly for the substrate, and/or the transport installation comprises an endless web assembly for the mask web.
  • the transport installation may comprise a control unit for controlling the speed of the substrate and the speed of the mask web in the treatment space.
  • the web mask comprises a paramagnetic material and the plasma treatment apparatus further comprises a magnetic layer provided in the first electrode, in order to obtain close contact between mask and substrate.
  • the mask web has a magnetic permeability of at least 1 Tm/ A, e.g. equal to or larger than 5 Tm/A.
  • the present invention also relates to use of the method according to any one of the present embodiments for providing a surface of a substrate with a predefined pattern, or to use of the method according to the present embodiments for providing a hydrophobic substrate with a predefined hydrophilic pattern. Sharp defined transitions may e.g.
  • the present invention relates to use of the method according to any of the present embodiments for etching a surface of a substrate with a predefined pattern, or to the use of the method according to any of the present embodiments for depositing material in a predefined pattern on a surface of a substrate.
  • Fig. 1 shows a schematic diagram of an embodiment of a plasma treatment apparatus according to the present invention
  • Fig. 2 shows a schematic diagram of a further embodiment according to the present invention, illustrating details of a straightened electrode section in which a mask is held to a substrate using magnetic forces;
  • Fig. 3 shows a graph of a measurement of a water contact angle of a substrate treated using the present invention embodiments.
  • a schematic embodiment is shown of a plasma treatment apparatus for the treatment of a substrate 1 in the form of e.g. a polymeric web.
  • the substrate 1 is a long web, which is transported from a first roll 15 to a second roll 16, e.g. using intermediate rollers 17 to keep the substrate 1 under tension.
  • the plasma is generated using two electrodes 2, 3 in a dielectric barrier discharge (DBD) configuration, which as such is known to the skilled person.
  • a first electrode 2 has the form of a cylinder electrode connected to a plasma generation unit 11.
  • a second electrode 3 is formed by a flat curved electrode following the curvature of the cylindrical surface of the first electrode 2 at a predetermined distance, which also is connected to the plasma generation unit 11.
  • the width of the second electrode 3 substantially corresponds to the width of the web 1 to be treated, or is somewhat wider.
  • a mask web 7 is also put in motion, synchronous with the movement of the web 1, and is brought into contact with the web 1 on the first electrode 2, just before entering the treatment space 5 between electrodes 2, 3.
  • two different materials are transported over the drum shaped first electrode 2, e.g. a polymeric film as substrate or web 1, covered by a metallic mask web 7.
  • This allows the use of a (flexible) mask web 7 to pattern the surface of the web 1 in a continuous roll to roll mode. By having the substrate 1 and mask web 7 to move synchronously, damage to the substrate 1 is prevented.
  • the mask web in this embodiment is an endless loop, running over rollers 18.
  • An additional tensioning unit 22 may also be included in the pathway of the mask web 7 in order to make sure a sufficient high tension is maintained in the mask web 7.
  • the mask web 7 may be of finite dimension, and may, like the web 1, be transported from a first to a second roll to hold the mask web 7.
  • the transport of the substrate 1 and the mask web 7 through the treatment space 5 is implemented by a transport installation, comprising various parts.
  • the transport installation comprises the rollers 18 for the mask web 7, and the first, second and intermediate rollers 15, 16, 17 for the substrate 1.
  • Other embodiments and constituents of the transport installation are possible.
  • the system may also comprise a web control unit 20, which is connected to at least one of the rollers 17 in the pathway of the web 1, and at least one of the rollers 18 in the pathway of the mask web 7, for driving the rollers 17, 18 (e.g. using an internal or external drive device such as an electric motor).
  • rollers 17, 18 may also be provided with sensors measuring the speed of the web 1 and mask web 7, respectively, which feed back these signals to the web control unit 20.
  • sensors measuring the speed of the web 1 and mask web 7, respectively which feed back these signals to the web control unit 20.
  • the plasma control unit 11 e.g. comprises a power supply and associated control circuitry as described in the pending international patent application PCT/NL2006/050209, and European patent applications EP-A-1381257, EP-A- 1626613 of applicant, which are herein incorporated by reference.
  • the mask device 7 can be either on a floating potential, be grounded, or be on the same potential as the first (bottom) electrode 2. Depending on the type of material used for the mask device 7 and the substrate 1 , and the type of application, these alternatives may provide an optimum result.
  • the plasma generation unit 11 is arranged to generate a uniform atmospheric pressure glow discharge plasma in the treatment space 5 between first and second electrode 2, 3.
  • the parts of the surface of the web 1 may be treated which are exposed by the metallic mask web 7. This may e.g. be applied in the manufacturing of printed electronics as one of the processing steps, e.g. to make parts of the surface of the web 1 hydrophilic or hydrophobic.
  • the local plasma in the treatment space 5 may be used to deposit substances on the exposed parts of the surface of the web 1.
  • the treatment space 5 may be supplied with various gasses and compounds. These include, but are not limited to N 2 , NH 3 , O 2 , CO 2 for hydrophilic treatment of a substrate 1, or CF4 / H 2 or plasma polymerized HMDSO (ppHMDSO) for hydrophobic treatment of a substrate 1.
  • gasses and compounds include, but are not limited to N 2 , NH 3 , O 2 , CO 2 for hydrophilic treatment of a substrate 1, or CF4 / H 2 or plasma polymerized HMDSO (ppHMDSO) for hydrophobic treatment of a substrate 1.
  • any plasma may be used to treat the surface of the web 1 as desired, e.g. using an inductively coupled plasma (ICP) generation.
  • ICP inductively coupled plasma
  • the first electrode 2 is provided with a magnetized layer 6, as e.g. shown in the schematic diagram of Fig. 2, in which the area of the treatment space 5 (including first and second electrode 2, 3) is shown straightened. This is specifically advantageous when the patterns in the mask web 7 are complicated and may tend to lift off from the polymeric web 1.
  • the DBD structure of the apparatus according to Fig. 1 is enhanced by using a further dielectric barrier 4 on the surface of the second electrode 3 directed towards the treatment space 5. This will enhance the generation of a stable plasma in the treatment space 5 and may help in providing a stable and uniform glow discharge plasma in case this is needed.
  • the mask web 7 is used on top of the surface of web 1, which in its turn is positioned on top of a magnetic layer 6, which interacts with the mask web 7.
  • the mask web 7 may be made of conductive material, e.g. a metal mask web 7.
  • the mask web 7, which has a predetermined magnetic permeability can be held in close contact with the web 1 using the magnetic layer 6.
  • the material to be treated (surface of web 1) is sandwiched between the mask web 7 and magnetic layer 6. Main advantages are that the bulk plasma ignites at normal low breakdown voltages and the gas supply to the holes 10 in the mask device 7 towards the surface of the web 1 is by diffusion from the bulk plasma in treatment space 5.
  • the magnetic layer 6 is positioned on top of the first electrode 2, e.g. in the form of a magnetic layer 6. As an alternative, the magnetic layer 6 is arranged as part of the first electrode 2.
  • the mask web 7 is made of a thin material, in which a pattern is provided as holes or openings 10 in the material for patterning the surface of the web 1. As a result, the web 1 is sandwiched between the mask web 7 and the magnetic layer 6.
  • the magnetic layer 6 e.g. comprises small line shaped alternating north and south poles as shown in the cross sectional view of Fig. 2 which have good interaction with the mask device 7.
  • the magnetic layer 6 can either be conductive or non-conductive.
  • a magnetic layer 6 was used obtainable from Bakker Magnetics, available under the name 'Natural Magnetic foil', which comprises a semi-anisotropic magnetic layer.
  • This flexible foil comprises alternating magnetic poles at a predefined pitch distance (see e.g. the embodiment shown in Fig. 2) Also other flexible magnetic layers from other suppliers may be used.
  • the magnetic layer e.g. comprises randomly oriented alternating magnetic poles.
  • the thickness of the foil 6 used is as low as possible in order not to interfere with the generation of the glow discharge plasma in the treatment space 5.
  • the thickness of the magnetic layer 6 is e.g. less than 1 mm, e.g. 0.75 or 0.5 mm In another embodiment also foils 6 may be used with a thickness of more than 1 mm, for example 1.5 or 2 mm or even more.
  • the magnetic layers 6 suitable for use in this invention have as a fundamental property, that the magnetic field extends through the web 1 into the mask web 7 to allow a sufficiently strong attraction force. In order to have this sufficient attractive force the magnetic force should be evenly distributed over the surface of the magnetic layer 6 and exerts a magnetic force of between 5 and 100 g/cm 2 , e.g. 19 or 41 g/cm 2 . A higher magnetic force will allow to use a thinner mask web 7 (less material to attract).
  • the mask web 7 is made of a material which may have a magnetic permeability of at least 1 Tm/A, e.g. equal to or larger than 5 Tm/A. Very good results are obtained with the mask device having a magnetic permeability of 100, or 500 or 1000 Tm/A or any value in between. Material having such magnetic permeability can be selected from ferromagnetic material, or martensitic or austenitic material having ferromagnetic properties. It is furthermore known, that the attraction between a magnetic material and a material attractive for magnetic force is dependant on the thickness of an intermediate layer (i.e. the web 1) and the mask web 7.
  • the thickness of the mask web 7 is chosen as small as possible in order to have a good interaction with the magnetic layer 6 and as little as possible interference with the generation of the plasma in the treatment space 5.
  • the thickness of the mask web 7 is less than 1 mm, e.g. less than 0.4 mm, e.g. 0.1 or 0.05 mm.
  • a glow discharge plasma may be used advantageously the formation of a glow discharge plasma may be stimulated by controlling the displacement current using a plasma control unit 11 connected to the electrodes 2, 3 (see Fig. 1 and 2), and by controlling the distance between electrodes 2, 3, the glow discharge plasma formation can be promoted even into the small holes 10 in the mask device 7, leading to a uniform activation of the (unmasked) surface of substrate 1.
  • Example(s) A cyclic olefin polymer (COP) substrate roll 1 (optical grade Topas 0.1 mm thick and 17.8 cm width) was used in the surface treatment line as shown in Fig.l to pattern small hydrophilic spots.
  • the total working length of the plasma discharge in the treatment space 5 is typically 20 cm.
  • a flexible mask 7 (open squares with a pitch distance of 0.4 mm) 0.10 mm thick and 18 cm width (AISI 301) was brought as an endless loop in the line as shown in Fig.1 and run with a line speed of 1.0 m/min.
  • the pitch distance is defined as the distance from the centre point of each square to its direct neighbour square centre point
  • Gas mixture of Ar 8slm, N 2 2 slm and O 2 0.5 slm was used.
  • the sine pulse period applied was 200 micro seconds.
  • Excitation frequency of the plasma was typically 140 kHz..
  • a displacement current control was applied (dynamic matching).
  • the water contact angle (WCA) was measured using a Kriiss DSA 10 Micron contact angle meter, dispensing droplets of 50 pi.
  • First the quality of the plasma surface treatment was classified on COP substrate without using a moving mask according to the reproducibility of the spot to spot treatment, judging in total 10 spots per treated sample.
  • the effective treatment time in the treatment space was influenced by varying the duty cycles (DC). Less than 5% average WCA variation was judged as good (O), more than 5% ( ⁇ ) as moderate and more than 20% as bad (X). Table 1 shows its result and points out that at least a duty cycle of 2 % is needed and preferably above 10% in order to give an effective plasma treatment.
  • Table 1 Relation DC and effective treatment time on COP substrate
  • Non treated COP has a typical WCA of 110°. After treatment the hydrophilicity has increased dramatically.
  • Fig. 3 is showing a typical example of a WCA scan across a COP substrate 1 in the moving web direction treated by the plasma patterning process using a moving mask 7 with a line speed of mask and COP substrate of 1 m/min at a 20% duty cycle. Similar results were obtained using CO 2 , and H 2 instead of O 2 as a mixing gas using a plasma treatment at 20% duty cycle.
  • Fig.3 it is possible to realize patterns with predefined structures of hydrophobic/hydrophilic areas (or vice versa) and sharp transitions between hydrophilic and hydrophobic area (or vice versa) on substrates by this invention which may be very useful in applications such as micro titer plates manufacturing, electrically conductive paths manufacturing and even transparent conductive patterns manufacturing on substrates.
  • materials are deposited on the treated substrate, and adherence or reaction of the deposited material is defined by the hydrophobic/hydrophilic areas.
  • the treatment of the surface may further comprise etching the substrate 1 , wherein the etching activity is determined by the treated/untreated areas of the substrate 1.
  • x2 and xl represent the position of the droplets deposited at the border of the surface energy well. Difficulty is that the droplet cannot be deposited on the corner because the droplet will then move in to the surface energy well.
  • an ⁇ 8 7 ⁇ m can be derived, which indicates that sharp transitions between the hydrophilic to hydrophobic area (or vice versa) can be achieved smaller than 10 micron.
  • ⁇ 50 7 ⁇ m is observed, which indicates the transition between the hydrophilic to hydrophobic area (or vice versa) are very sharp and even smaller than 2 micron, e.g. smaller 0.2 micron.
  • the invention can be used in the application of inkjet printing.
  • the inkjet printing nozzle may have a less accurate output the invented method allows to control the hydrophobic/hydrophilic surface parts very accurately in lateral scale.
  • the liquid ink dispensed by the nozzle will automatically move to area of highest surface energy.
  • Materials which also may be used to coat the COP substrate are commercially available conductive inks containing for instance containing silver-particles. Also, gel- based inks based on transparent conductive material can be used. The sol-gel will adhere only to those areas of the substrate 1 which are hydrophilic. Subsequently, the transparent conductive sol gel can be cured by a temperature step or by UV curing. In this manner, a patterned transparent layout can be printed on a polymer surface, which may be used for display applications, or photovoltaic cells.
  • the invented method can be used in other printing applications too like for instance offset printing.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Method and plasma treatment apparatus for treatment of a substrate surface (1) using an atmospheric pressure plasma. An atmospheric pressure plasma is provided in a treatment space (5) between a first electrode (2) and a second electrode (3). Furthermore, a substrate (1) and a mask web (7) in contact with the substrate (1) are provided. A plasma generating power is applied to the first and second electrode (2, 3) for treatment of surface areas of the substrate (1) exposed by the mask web (7), in which the substrate (1) and mask web (7) are moved synchronously through the treatment space (5).

Description

METHOD AND APPARATUS FOR PLASMA SURFACE TREATMENT
OF A MOVING SUBSTRATE
Field of the invention
The present invention relates to a method for treatment of a substrate surface using an atmospheric pressure plasma, the method comprising providing an atmospheric pressure plasma in a treatment space between a first electrode and a second electrode, providing a substrate and a mask web in contact with the substrate, and applying a plasma generating power to the first and second electrode for treatment of surface areas of the substrate exposed by the mask web. In a further aspect, the present invention relates to a plasma treatment apparatus for treatment of a surface of a substrate, comprising a discharge electrode structure having a treatment space and comprising a first electrode and a second electrode, a power supply connected to the first electrode and the second electrode for generating an atmospheric pressure plasma in the treatment space, and a transport installation for transporting the substrate through the treatment space.
Prior art
International patent publication WO2004/019381 describes the process of depositing a coating on a substrate in the form of a moving web. A rotating drum is used as one of the electrodes for generating a glow discharge plasma.
European patent publication EP 1 403 902 Al discloses a method for generating an atmospheric pressure glow discharge plasma using a dielectric barrier discharge electrode configuration. A drum shaped electrode is used, and the substrate film to be treated is guided along a part of the circumference of the drum shaped electrode.
Summary of the invention
The present invention seeks to provide an improved substrate treatment method and apparatus, which allow a substrate surface to be patterned in a continuous manner using an atmospheric pressure plasma. According to the present invention, a method according to the preamble defined above is provided, in which the substrate and mask web are moved synchronously through the treatment space. This allows to efficiently perform a plasma treatment of a substrate in the form of a moving substrate or a moving web in a continuous manner, such as in roll-to-roll treatment of webs.
In a further embodiment, the mask web is electrically conductive. This is advantageous in combination with the generated plasma for providing an optimum result (well defined plasma, and well defined mask openings to expose parts of the substrate). Depending on the specific application, the mask web may be grounded, at floating potential or at the same potential as the first electrode.
As mentioned above, the substrate may be a roll to roll substrate, e.g. in the form of a polymer web. Many materials used in various applications as basic material are provided as a roll-to-roll substrate. Using the present method, these may efficiently be plasma treated to obtain a semi-product for further production into a final product.
To obtain an optimal defined pattern on the substrate, the mask web is a roll to roll mask web in a further embodiment. This allows to synchronize the movement of both substrate and mask to obtain as low as possible shifts between substrate and mask during treatment. In a further embodiment, the mask web is a continuous mask web, (endless mask, loop of material), allowing to re-use pattern areas of the mask continuously.
In a further embodiment, the mask web is held in contact with the web by a magnetic force. This furthermore aids in maintaining the mask web and substrate in close contact, resulting in better defined structures on the substrate after treatment.
The method, in a further embodiment, further comprises depositing a material on the treated substrate. E.g., the material is an ink selected from the group consisting of a water based ink, a conductive ink, a gel based ink. Using the present method embodiments, a substrate may be treated with a mask with very fine details, after which material may be deposited using the changed characteristics of the substrate after treatment. For ink treatment, e.g. use can be made of hydrophobic/hydrophilic areas on the treated substrate.
In a further aspect, the present invention relates to a plasma treatment apparatus according to the preamble defined above, in which the first electrode is arranged to receive, in operation, the substrate to be treated and a mask web in contact with the substrate, in which the transport installation is arranged to move the substrate and the mask web synchronously through the treatment space. This apparatus is suitable for implementing the method according to the various embodiments of the present invention. E.g. in further apparatus embodiments, the transport installation comprises a roll to roll assembly for the substrate, and/or the transport installation comprises an endless web assembly for the mask web. Furthermore, the transport installation may comprise a control unit for controlling the speed of the substrate and the speed of the mask web in the treatment space. Even further, the web mask comprises a paramagnetic material and the plasma treatment apparatus further comprises a magnetic layer provided in the first electrode, in order to obtain close contact between mask and substrate. For this, e.g., the mask web has a magnetic permeability of at least 1 Tm/ A, e.g. equal to or larger than 5 Tm/A. In even further aspects, the present invention also relates to use of the method according to any one of the present embodiments for providing a surface of a substrate with a predefined pattern, or to use of the method according to the present embodiments for providing a hydrophobic substrate with a predefined hydrophilic pattern. Sharp defined transitions may e.g. be provided between hydrophobic and hydrophilic areas of the substrate, in which a transition length is less than 10 microns, e.g. less than 2 micron or even less than 0.2 micron. Furthermore, the present invention relates to use of the method according to any of the present embodiments for etching a surface of a substrate with a predefined pattern, or to the use of the method according to any of the present embodiments for depositing material in a predefined pattern on a surface of a substrate.
Short description of drawings The present invention will be discussed in more detail below, using a number of exemplary embodiments, with reference to the attached drawings, in which
Fig. 1 shows a schematic diagram of an embodiment of a plasma treatment apparatus according to the present invention;
Fig. 2 shows a schematic diagram of a further embodiment according to the present invention, illustrating details of a straightened electrode section in which a mask is held to a substrate using magnetic forces;
Fig. 3 shows a graph of a measurement of a water contact angle of a substrate treated using the present invention embodiments. Detailed description of exemplary embodiments
In Fig. 1 a schematic embodiment is shown of a plasma treatment apparatus for the treatment of a substrate 1 in the form of e.g. a polymeric web. The substrate 1 is a long web, which is transported from a first roll 15 to a second roll 16, e.g. using intermediate rollers 17 to keep the substrate 1 under tension.
The plasma is generated using two electrodes 2, 3 in a dielectric barrier discharge (DBD) configuration, which as such is known to the skilled person. In this embodiment, a first electrode 2 has the form of a cylinder electrode connected to a plasma generation unit 11. A second electrode 3 is formed by a flat curved electrode following the curvature of the cylindrical surface of the first electrode 2 at a predetermined distance, which also is connected to the plasma generation unit 11. The width of the second electrode 3 substantially corresponds to the width of the web 1 to be treated, or is somewhat wider.
A mask web 7 is also put in motion, synchronous with the movement of the web 1, and is brought into contact with the web 1 on the first electrode 2, just before entering the treatment space 5 between electrodes 2, 3. As a result, two different materials are transported over the drum shaped first electrode 2, e.g. a polymeric film as substrate or web 1, covered by a metallic mask web 7. This allows the use of a (flexible) mask web 7 to pattern the surface of the web 1 in a continuous roll to roll mode. By having the substrate 1 and mask web 7 to move synchronously, damage to the substrate 1 is prevented.
The mask web in this embodiment is an endless loop, running over rollers 18. An additional tensioning unit 22 may also be included in the pathway of the mask web 7 in order to make sure a sufficient high tension is maintained in the mask web 7.
In a further embodiment, the mask web 7 may be of finite dimension, and may, like the web 1, be transported from a first to a second roll to hold the mask web 7.
The transport of the substrate 1 and the mask web 7 through the treatment space 5 is implemented by a transport installation, comprising various parts. In the embodiment shown in Fig. 1, the transport installation comprises the rollers 18 for the mask web 7, and the first, second and intermediate rollers 15, 16, 17 for the substrate 1. Other embodiments and constituents of the transport installation are possible. In order to maintain a synchronous movement of web 1 and mask web 7 in the treatment space 5 between electrodes 2, 3, the system may also comprise a web control unit 20, which is connected to at least one of the rollers 17 in the pathway of the web 1, and at least one of the rollers 18 in the pathway of the mask web 7, for driving the rollers 17, 18 (e.g. using an internal or external drive device such as an electric motor). These rollers 17, 18 may also be provided with sensors measuring the speed of the web 1 and mask web 7, respectively, which feed back these signals to the web control unit 20. As a result it is possible to ensure that the web 1 and the mask web 7 have the same line speed in the treatment space 5 between first and second electrode 2, 3, as a result of which any possible scratching of the web 1 is prevented.
The plasma control unit 11 e.g. comprises a power supply and associated control circuitry as described in the pending international patent application PCT/NL2006/050209, and European patent applications EP-A-1381257, EP-A- 1626613 of applicant, which are herein incorporated by reference. The mask device 7 can be either on a floating potential, be grounded, or be on the same potential as the first (bottom) electrode 2. Depending on the type of material used for the mask device 7 and the substrate 1 , and the type of application, these alternatives may provide an optimum result.
The plasma generation unit 11 is arranged to generate a uniform atmospheric pressure glow discharge plasma in the treatment space 5 between first and second electrode 2, 3. With this APG plasma, the parts of the surface of the web 1 may be treated which are exposed by the metallic mask web 7. This may e.g. be applied in the manufacturing of printed electronics as one of the processing steps, e.g. to make parts of the surface of the web 1 hydrophilic or hydrophobic. Also, with appropriate gas supply means, the local plasma in the treatment space 5 may be used to deposit substances on the exposed parts of the surface of the web 1.
Using the APG plasma, the treatment space 5 may be supplied with various gasses and compounds. These include, but are not limited to N2, NH3, O2, CO2 for hydrophilic treatment of a substrate 1, or CF4 / H2 or plasma polymerized HMDSO (ppHMDSO) for hydrophobic treatment of a substrate 1.
Although the embodiment described above mentions the use of a DBD electrode structure for generating an atmospheric pressure glow discharge plasma, any plasma may be used to treat the surface of the web 1 as desired, e.g. using an inductively coupled plasma (ICP) generation.
In a further embodiment, a better contact between web 1 and mask web 7 is ensured by using magnetic forces. For this, the first electrode 2 is provided with a magnetized layer 6, as e.g. shown in the schematic diagram of Fig. 2, in which the area of the treatment space 5 (including first and second electrode 2, 3) is shown straightened. This is specifically advantageous when the patterns in the mask web 7 are complicated and may tend to lift off from the polymeric web 1.
The DBD structure of the apparatus according to Fig. 1 is enhanced by using a further dielectric barrier 4 on the surface of the second electrode 3 directed towards the treatment space 5. This will enhance the generation of a stable plasma in the treatment space 5 and may help in providing a stable and uniform glow discharge plasma in case this is needed.
In an embodiment, the mask web 7 is used on top of the surface of web 1, which in its turn is positioned on top of a magnetic layer 6, which interacts with the mask web 7. The mask web 7 may be made of conductive material, e.g. a metal mask web 7. To secure intimate contact between mask web 7 and the surface of web 1, the mask web 7, which has a predetermined magnetic permeability, can be held in close contact with the web 1 using the magnetic layer 6. For the best results, there is basically no space between the mask web 7 and the web 1, and if there would be a space at all, the distance between mask web 7 and web 1 should be e.g. less than 1 micrometer. The material to be treated (surface of web 1) is sandwiched between the mask web 7 and magnetic layer 6. Main advantages are that the bulk plasma ignites at normal low breakdown voltages and the gas supply to the holes 10 in the mask device 7 towards the surface of the web 1 is by diffusion from the bulk plasma in treatment space 5.
The magnetic layer 6 is positioned on top of the first electrode 2, e.g. in the form of a magnetic layer 6. As an alternative, the magnetic layer 6 is arranged as part of the first electrode 2. The mask web 7 is made of a thin material, in which a pattern is provided as holes or openings 10 in the material for patterning the surface of the web 1. As a result, the web 1 is sandwiched between the mask web 7 and the magnetic layer 6.
In one embodiment, the magnetic layer 6 e.g. comprises small line shaped alternating north and south poles as shown in the cross sectional view of Fig. 2 which have good interaction with the mask device 7. The magnetic layer 6 can either be conductive or non-conductive. In an example, a magnetic layer 6 was used obtainable from Bakker Magnetics, available under the name 'Natural Magnetic foil', which comprises a semi-anisotropic magnetic layer. This flexible foil comprises alternating magnetic poles at a predefined pitch distance (see e.g. the embodiment shown in Fig. 2) Also other flexible magnetic layers from other suppliers may be used. In another magnetic layer 6 which may be used, the magnetic layer e.g. comprises randomly oriented alternating magnetic poles. The thickness of the foil 6 used is as low as possible in order not to interfere with the generation of the glow discharge plasma in the treatment space 5. The thickness of the magnetic layer 6 is e.g. less than 1 mm, e.g. 0.75 or 0.5 mm In another embodiment also foils 6 may be used with a thickness of more than 1 mm, for example 1.5 or 2 mm or even more. The magnetic layers 6 suitable for use in this invention have as a fundamental property, that the magnetic field extends through the web 1 into the mask web 7 to allow a sufficiently strong attraction force. In order to have this sufficient attractive force the magnetic force should be evenly distributed over the surface of the magnetic layer 6 and exerts a magnetic force of between 5 and 100 g/cm2, e.g. 19 or 41 g/cm2. A higher magnetic force will allow to use a thinner mask web 7 (less material to attract).
The mask web 7 is made of a material which may have a magnetic permeability of at least 1 Tm/A, e.g. equal to or larger than 5 Tm/A. Very good results are obtained with the mask device having a magnetic permeability of 100, or 500 or 1000 Tm/A or any value in between. Material having such magnetic permeability can be selected from ferromagnetic material, or martensitic or austenitic material having ferromagnetic properties. It is furthermore known, that the attraction between a magnetic material and a material attractive for magnetic force is dependant on the thickness of an intermediate layer (i.e. the web 1) and the mask web 7. In further embodiments, the thickness of the mask web 7 is chosen as small as possible in order to have a good interaction with the magnetic layer 6 and as little as possible interference with the generation of the plasma in the treatment space 5. For this, the thickness of the mask web 7 is less than 1 mm, e.g. less than 0.4 mm, e.g. 0.1 or 0.05 mm. In an embodiment where a glow discharge plasma may be used advantageously the formation of a glow discharge plasma may be stimulated by controlling the displacement current using a plasma control unit 11 connected to the electrodes 2, 3 (see Fig. 1 and 2), and by controlling the distance between electrodes 2, 3, the glow discharge plasma formation can be promoted even into the small holes 10 in the mask device 7, leading to a uniform activation of the (unmasked) surface of substrate 1.
Example(s) A cyclic olefin polymer (COP) substrate roll 1 (optical grade Topas 0.1 mm thick and 17.8 cm width) was used in the surface treatment line as shown in Fig.l to pattern small hydrophilic spots. The total working length of the plasma discharge in the treatment space 5 is typically 20 cm.
A flexible mask 7 (open squares with a pitch distance of 0.4 mm) 0.10 mm thick and 18 cm width (AISI 301) was brought as an endless loop in the line as shown in Fig.1 and run with a line speed of 1.0 m/min. The pitch distance is defined as the distance from the centre point of each square to its direct neighbour square centre point Gas mixture of Ar 8slm, N2 2 slm and O20.5 slm was used. The sine pulse period applied was 200 micro seconds. Excitation frequency of the plasma was typically 140 kHz.. In order to control the stability of the APG plasma in the treatment space a displacement current control was applied (dynamic matching).
The water contact angle (WCA) was measured using a Kriiss DSA 10 Micron contact angle meter, dispensing droplets of 50 pi. First the quality of the plasma surface treatment was classified on COP substrate without using a moving mask according to the reproducibility of the spot to spot treatment, judging in total 10 spots per treated sample. The effective treatment time in the treatment space was influenced by varying the duty cycles (DC). Less than 5% average WCA variation was judged as good (O), more than 5% (Δ) as moderate and more than 20% as bad (X). Table 1 shows its result and points out that at least a duty cycle of 2 % is needed and preferably above 10% in order to give an effective plasma treatment.
Table 1 : Relation DC and effective treatment time on COP substrate
Figure imgf000009_0001
Non treated COP has a typical WCA of 110°. After treatment the hydrophilicity has increased dramatically. Fig. 3 is showing a typical example of a WCA scan across a COP substrate 1 in the moving web direction treated by the plasma patterning process using a moving mask 7 with a line speed of mask and COP substrate of 1 m/min at a 20% duty cycle. Similar results were obtained using CO2, and H2 instead of O2 as a mixing gas using a plasma treatment at 20% duty cycle. It is clear from Fig.3 that it is possible to realize patterns with predefined structures of hydrophobic/hydrophilic areas (or vice versa) and sharp transitions between hydrophilic and hydrophobic area (or vice versa) on substrates by this invention which may be very useful in applications such as micro titer plates manufacturing, electrically conductive paths manufacturing and even transparent conductive patterns manufacturing on substrates. In these applications, materials are deposited on the treated substrate, and adherence or reaction of the deposited material is defined by the hydrophobic/hydrophilic areas. In other applications, the treatment of the surface may further comprise etching the substrate 1 , wherein the etching activity is determined by the treated/untreated areas of the substrate 1. In order to quantitatively describe the sharp transition from hydrophilic to hydrophobic or vice versa we have defined a parameter which characterises how sudden the wettability transition η "happens".
Figure imgf000010_0001
Where x2 and xl represent the position of the droplets deposited at the border of the surface energy well. Difficulty is that the droplet cannot be deposited on the corner because the droplet will then move in to the surface energy well.
From Fig. 3 an η = 8 7μm can be derived, which indicates that sharp transitions between the hydrophilic to hydrophobic area (or vice versa) can be achieved smaller than 10 micron. To obtain even more detailed information about the typical sharpness of the wettability transition more detailed analysis measurements were carried out with the micro contact angle equipment using 10 pi droplets taking intervals as small as 1 μm. Based on these measurements an η= 50 7μm is observed, which indicates the transition between the hydrophilic to hydrophobic area (or vice versa) are very sharp and even smaller than 2 micron, e.g. smaller 0.2 micron.
Especially the invention can be used in the application of inkjet printing. Although the inkjet printing nozzle may have a less accurate output the invented method allows to control the hydrophobic/hydrophilic surface parts very accurately in lateral scale. The liquid ink dispensed by the nozzle will automatically move to area of highest surface energy.
Materials which also may be used to coat the COP substrate are commercially available conductive inks containing for instance containing silver-particles. Also, gel- based inks based on transparent conductive material can be used. The sol-gel will adhere only to those areas of the substrate 1 which are hydrophilic. Subsequently, the transparent conductive sol gel can be cured by a temperature step or by UV curing. In this manner, a patterned transparent layout can be printed on a polymer surface, which may be used for display applications, or photovoltaic cells.
The invented method can be used in other printing applications too like for instance offset printing.

Claims

1. Method for treatment of a substrate surface (1) using an atmospheric pressure plasma, the method comprising: providing an atmospheric pressure plasma in a treatment space (5) between a first electrode (2) and a second electrode (3), providing a substrate (1) and a mask web (7) in contact with the substrate (1), and applying a plasma generating power to the first and second electrode (2, 3) for treatment of surface areas of the substrate (1) exposed by the mask web (7), in which the substrate (1) and mask web (7) are moved synchronously through the treatment space (5).
2. Method according to claim 1, in which the mask web is electrically conductive.
3. Method according to claim 1 or 2, in which the substrate is a roll to roll substrate.
4. Method according to any one of claims 1-3, in which the mask web is a roll to roll mask web.
5. Method according to any one of claims 1-3, in which the mask web is a continuous mask web.
6. Method according to any one of claims 1-5, in which the mask web is held in contact with the web by a magnetic force.
7. Method according to any one of claims 1-6, in which the method further comprises depositing a material on the treated substrate.
8. Method according to claim 7, in which the material is an ink selected from the group consisting of a water based ink, a conductive ink, a gel based ink.
9. Plasma treatment apparatus for treatment of a surface of a substrate, comprising a discharge electrode structure having a treatment space (5) and comprising a first electrode (2) and a second electrode (3), a power supply (11) connected to the first electrode (2) and the second electrode (3) for generating an atmospheric pressure plasma in the treatment space (5), and a transport installation for transporting the substrate through the treatment space (5), in which the first electrode (2) is arranged to receive, in operation, the substrate (1) to be treated and a mask web (7) in contact with the substrate (1), in which the transport installation is arranged to move the substrate (1) and the mask web (7) synchronously through the treatment space.
10. Plasma treatment apparatus according to claim 9, in which the transport installation comprises a roll to roll assembly (15, 16, 17) for the substrate.
11. Plasma treatment apparatus according to claim 9 or 10, in which the transport installation comprises an endless web assembly (18) for the mask web (7).
12. Plasma treatment apparatus according to any one of claims 9-11, in which the transport installation comprises a control unit for controlling the speed of the substrate and the speed of the mask web in the treatment space.
13. Plasma treatment apparatus according to any one of claims 9-12, in which the web mask comprises a paramagnetic material and the plasma treatment apparatus further comprises a magnetic layer (6) provided in the first electrode (2).
14. Plasma treatment apparatus according to any one of claims 9-13, in which the mask web (7) has a magnetic permeability of at least 1 Tm/ A, e.g. equal to or larger than 5 Tm/A.
15. Use of the method according to any one of claims 1-8 for providing a surface of a substrate (1) with a predefined pattern.
16. Use of the method according to any one of claims 1-8 for providing a hydrophobic substrate (1) with a predefined hydrophilic pattern.
17. Use of the method according claim 17 for providing sharp defined transitions between hydrophobic and hydrophilic areas of the substrate (1), in which a transition length is less than 10 microns, e.g. less than 2 micron, or even less than 0.2 micron.
18. Use of the method according to any one of claims 1-8 for etching a surface of a substrate (1) with a predefined pattern.
19. Use of the method according to any one of claims 1-8 for depositing material in a predefined pattern on a surface of a substrate (1).
PCT/NL2009/050041 2008-02-01 2009-01-29 Method and apparatus for plasma surface treatment of a moving substrate Ceased WO2009096785A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP09707047.8A EP2235735B1 (en) 2008-02-01 2009-01-29 Method and apparatus for plasma surface treatment of a moving substrate
US12/865,710 US8702999B2 (en) 2008-02-01 2009-01-29 Method and apparatus for plasma surface treatment of a moving substrate
JP2010544903A JP5597551B2 (en) 2008-02-01 2009-01-29 Apparatus and method for plasma surface treatment of moving substrate and use of the method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08101192 2008-02-01
EP08101192.6 2008-02-01

Publications (1)

Publication Number Publication Date
WO2009096785A1 true WO2009096785A1 (en) 2009-08-06

Family

ID=39577640

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2009/050041 Ceased WO2009096785A1 (en) 2008-02-01 2009-01-29 Method and apparatus for plasma surface treatment of a moving substrate

Country Status (4)

Country Link
US (1) US8702999B2 (en)
EP (1) EP2235735B1 (en)
JP (1) JP5597551B2 (en)
WO (1) WO2009096785A1 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011142260A (en) * 2010-01-08 2011-07-21 Ulvac Japan Ltd Etching device
WO2011102711A1 (en) * 2010-02-17 2011-08-25 Vision Dynamics Holding B.V. Device and method for generating a plasma discharge for patterning the surface of a substrate
ITUD20110077A1 (en) * 2011-05-31 2012-12-01 Genefinity S R L EQUIPMENT FOR DEPOSITION OF THIN FILMS ON A FLEXIBLE SUBSTRATE AND ITS PROCEDURE
US8323753B2 (en) 2006-05-30 2012-12-04 Fujifilm Manufacturing Europe B.V. Method for deposition using pulsed atmospheric pressure glow discharge
US8338307B2 (en) 2007-02-13 2012-12-25 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
US8445897B2 (en) 2008-02-08 2013-05-21 Fujifilm Manufacturing Europe B.V. Method for manufacturing a multi-layer stack structure with improved WVTR barrier property
EP2620519A1 (en) * 2012-01-24 2013-07-31 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Vacuum deposition apparatus
WO2014097621A1 (en) * 2012-12-21 2014-06-26 Asahi Glass Company Limited Pair of electrodes for dbd plasma process
CN104167347A (en) * 2014-08-04 2014-11-26 苏州工业职业技术学院 Plate-type water cooling electrode assembly plasma surface treatment device with continuous treatment function
WO2016193406A1 (en) 2015-06-04 2016-12-08 Hochschule Für Angewandte Wissenschaft Und Kunst Hildesheim/Holzminden/Göttingen Device for the plasma treatment of objects, in particular in strip form

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1917842B1 (en) * 2005-08-26 2015-03-11 FUJIFILM Manufacturing Europe B.V. Method and arrangement for generating and controlling a discharge plasma
WO2007145513A1 (en) * 2006-06-16 2007-12-21 Fujifilm Manufacturing Europe B.V. Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
JP2012256501A (en) * 2011-06-08 2012-12-27 Tokyo Institute Of Technology Plasma generation gas, method for generating plasma, and atmospheric pressure plasma generated by the method
KR101175909B1 (en) * 2011-07-27 2012-08-22 삼성전기주식회사 Surface treatment method of printed circuit board, and printed circuit board
US9435028B2 (en) * 2013-05-06 2016-09-06 Lotus Applied Technology, Llc Plasma generation for thin film deposition on flexible substrates
JP6451129B2 (en) * 2013-09-17 2019-01-16 株式会社リコー Plasma processing apparatus, printing apparatus, printing system, and printed matter manufacturing method
US20230191771A1 (en) * 2020-05-15 2023-06-22 Mucell Extrusion, Llc A machine for surface treatment of a film

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478878A (en) * 1981-09-01 1984-10-23 Siemens Aktiengesellschaft Method for the preparation of metal-free strips in the metal vapor deposition of an insulating tape
US4681780A (en) * 1983-12-01 1987-07-21 Polaroid Corporation Continuously cleaned rotary coating mask
WO2004019381A2 (en) * 1999-02-01 2004-03-04 Sigma Technologies International, Inc. Barrier coatings produced by atmospheric glow discharge
EP1403902A1 (en) * 2002-09-30 2004-03-31 Fuji Photo Film B.V. Method and arrangement for generating an atmospheric pressure glow discharge plasma (APG)
US20050079418A1 (en) * 2003-10-14 2005-04-14 3M Innovative Properties Company In-line deposition processes for thin film battery fabrication
WO2007078556A1 (en) * 2005-12-28 2007-07-12 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
WO2007089146A1 (en) * 2006-02-02 2007-08-09 Fujifilm Manufacturing Europe B.V. Method for surface treatment by plasma and surface treatment apparatus

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3974382A (en) * 1975-01-06 1976-08-10 Massachusetts Institute Of Technology Lithographic mask attraction system
JPS5621277B2 (en) * 1975-01-23 1981-05-18
JPS58111380A (en) 1981-12-24 1983-07-02 Seiko Epson Corp Manufacture of amorphous silicon solar cell
JPS58217344A (en) 1983-06-01 1983-12-17 旭化成ポリフレックス株式会社 Barriering plastic laminated sheet
JPS61143577A (en) * 1984-12-14 1986-07-01 Konishiroku Photo Ind Co Ltd Thin film forming device
US4631199A (en) 1985-07-22 1986-12-23 Hughes Aircraft Company Photochemical vapor deposition process for depositing oxide layers
JPS62143480A (en) * 1985-12-18 1987-06-26 Hitachi Ltd Thin film solar cell mass production equipment
JPS6433932A (en) * 1987-07-29 1989-02-03 Matsushita Electric Industrial Co Ltd Etching apparatus
JPH02266524A (en) * 1989-04-06 1990-10-31 Sankyo Seiki Mfg Co Ltd Formation of protective coat
JPH0494169A (en) 1990-08-09 1992-03-26 Kanegafuchi Chem Ind Co Ltd Thin film diode element
JPH04183275A (en) 1990-11-16 1992-06-30 Honda Motor Co Ltd Pulse width modulation controller
JP2699695B2 (en) 1991-06-07 1998-01-19 日本電気株式会社 Chemical vapor deposition
US5187457A (en) 1991-09-12 1993-02-16 Eni Div. Of Astec America, Inc. Harmonic and subharmonic filter
US5660744A (en) 1992-03-26 1997-08-26 Kabushiki Kaisha Toshiba Plasma generating apparatus and surface processing apparatus
US5422584A (en) 1992-09-30 1995-06-06 The United States Of America As Represented By The Secretary Of The Navy Variable phase sine wave generator for active phased arrays
FR2704558B1 (en) 1993-04-29 1995-06-23 Air Liquide METHOD AND DEVICE FOR CREATING A DEPOSIT OF SILICON OXIDE ON A SOLID TRAVELING SUBSTRATE.
JP3148910B2 (en) 1993-09-01 2001-03-26 日本真空技術株式会社 Plasma CVD film forming method
DE4438533A1 (en) 1994-11-02 1996-05-09 Softal Elektronik Gmbh Corona treatment at atmos. pressure
US5710067A (en) 1995-06-07 1998-01-20 Advanced Micro Devices, Inc. Silicon oxime film
JP3061255B2 (en) 1995-08-18 2000-07-10 キヤノン販売株式会社 Film formation method
US5928527A (en) 1996-04-15 1999-07-27 The Boeing Company Surface modification using an atmospheric pressure glow discharge plasma source
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
DE19728472A1 (en) 1997-07-03 1999-01-07 Siemens Ag Structuring process
WO1999002276A1 (en) 1997-07-07 1999-01-21 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (tms)
EP0995218A1 (en) 1997-07-14 2000-04-26 The University Of Tennessee Research Corporation Plasma treater systems and treatment methods
JP2000026632A (en) 1998-07-13 2000-01-25 Sekisui Chem Co Ltd Method of forming thin film on film substrate using atmospheric pressure plasma
JP2000183500A (en) * 1998-12-18 2000-06-30 Sony Corp Pattern forming apparatus and pattern forming method
US7067405B2 (en) * 1999-02-01 2006-06-27 Sigma Laboratories Of Arizona, Inc. Atmospheric glow discharge with concurrent coating deposition
DE60009771T2 (en) 1999-02-15 2005-03-17 Konica Corp. A method of surface treatment, a method of producing an ink jet recording material, and material produced by this method
JP2000313962A (en) 1999-04-26 2000-11-14 Sekisui Chem Co Ltd Method of forming TiO2 thin film using discharge plasma
US7091605B2 (en) 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6413645B1 (en) 2000-04-20 2002-07-02 Battelle Memorial Institute Ultrabarrier substrates
TW520453B (en) 1999-12-27 2003-02-11 Seiko Epson Corp A method to fabricate thin insulating films
DE10011276A1 (en) 2000-03-08 2001-09-13 Wolff Walsrode Ag Process employing indirect atmospheric plasmatron, surface-treats or coats thin metallic foil or polymer sheet
EP1264330B1 (en) 2000-03-14 2003-07-16 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Method and device for the plasma-activated surface treatment and use of the inventive method
DE10037957C1 (en) 2000-07-27 2002-02-28 Infineon Technologies Ag Process for the anisotropic dry etching of organic anti-reflection layers
US6524431B1 (en) 2000-11-10 2003-02-25 Helix Technology Inc. Apparatus for automatically cleaning mask
WO2002040742A1 (en) 2000-11-14 2002-05-23 Sekisui Chemical Co., Ltd. Method and device for atmospheric plasma processing
US6835425B2 (en) 2000-12-12 2004-12-28 Konica Corporation Layer-forming method using plasma state reactive gas
US6464779B1 (en) 2001-01-19 2002-10-15 Novellus Systems, Inc. Copper atomic layer chemical vapor desposition
TW556044B (en) * 2001-02-15 2003-10-01 Sipix Imaging Inc Process for roll-to-roll manufacture of a display by synchronized photolithographic exposure on a substrate web
GB0113751D0 (en) 2001-06-06 2001-07-25 Dow Corning Surface treatment
US6861334B2 (en) 2001-06-21 2005-03-01 Asm International, N.V. Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition
CA2352567A1 (en) 2001-07-06 2003-01-06 Mohamed Latreche Translucent material displaying ultra-low transport of gases and vapors, and method for its production
US7098131B2 (en) 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US6756318B2 (en) 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
US6556461B1 (en) 2001-11-19 2003-04-29 Power Paragon, Inc. Step switched PWM sine generator
DE10161469A1 (en) 2001-12-13 2003-07-03 Schott Glas Volume-optimized reactor for simultaneous coating of spectacle lenses on both sides
JP3891267B2 (en) 2001-12-25 2007-03-14 キヤノンアネルバ株式会社 Silicon oxide film manufacturing method
JP3859518B2 (en) 2002-01-15 2006-12-20 住友ベークライト株式会社 Transparent water vapor barrier film
US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
EP1351321B1 (en) 2002-04-01 2013-12-25 Konica Corporation Support and organic electroluminescence element comprising the support
JP4278915B2 (en) 2002-04-02 2009-06-17 東京エレクトロン株式会社 Etching method
JP2003328126A (en) * 2002-05-09 2003-11-19 Konica Minolta Holdings Inc Patterning method and film forming apparatus
TWI273143B (en) 2002-06-10 2007-02-11 Konica Corp Layer formation method, and substrate with a layer formed by the method
US6774569B2 (en) 2002-07-11 2004-08-10 Fuji Photo Film B.V. Apparatus for producing and sustaining a glow discharge plasma under atmospheric conditions
US7288204B2 (en) * 2002-07-19 2007-10-30 Fuji Photo Film B.V. Method and arrangement for treating a substrate with an atmospheric pressure glow plasma (APG)
US20050084610A1 (en) 2002-08-13 2005-04-21 Selitser Simon I. Atmospheric pressure molecular layer CVD
JP4200290B2 (en) * 2003-05-21 2008-12-24 パナソニック株式会社 Mask unit
MXPA06002679A (en) 2003-09-09 2006-06-05 Dow Global Technologies Inc Glow discharge-generated chemical vapor deposition.
GB0323295D0 (en) 2003-10-04 2003-11-05 Dow Corning Deposition of thin films
US7153180B2 (en) * 2003-11-13 2006-12-26 Eastman Kodak Company Continuous manufacture of flat panel light emitting devices
EP1697962B1 (en) 2003-12-22 2009-12-09 FUJIFILM Manufacturing Europe B.V. Method of and arrangement for removing contaminants from a substrate surface using an atmospheric pressure glow plasma
EP1548795A1 (en) 2003-12-22 2005-06-29 Fuji Photo Film B.V. Method and apparatus for stabilizing a glow discharge plasma under atmospheric conditions
US7324035B2 (en) 2004-05-13 2008-01-29 University Of Florida Research Foundation, Inc. Amplifier with pulse coded output and remote signal reconstruction from the pulse output
JP2006004740A (en) 2004-06-17 2006-01-05 Seiko Epson Corp Film forming method, display device manufacturing method, display device, and electronic apparatus
ATE348497T1 (en) 2004-08-13 2007-01-15 Fuji Photo Film Bv METHOD AND DEVICE FOR CONTROLLING A GLOW DISCHARGE PLASMA UNDER ATMOSPHERIC PRESSURE
DE102004043384B4 (en) 2004-09-08 2010-06-17 Schott Ag Process for producing a coated hollow body substrate of at least polyethylene terephthalate
JP2006201538A (en) 2005-01-21 2006-08-03 Seiko Epson Corp Mask, mask manufacturing method, pattern forming method, wiring pattern forming method
US20060231908A1 (en) 2005-04-13 2006-10-19 Xerox Corporation Multilayer gate dielectric
CN101228288B (en) 2005-07-26 2011-12-28 Psm有限公司 Injection type plasma processing apparatus and method thereof
KR101218114B1 (en) 2005-08-04 2013-01-18 주성엔지니어링(주) Etching apparatus using the plasma
EP1917842B1 (en) 2005-08-26 2015-03-11 FUJIFILM Manufacturing Europe B.V. Method and arrangement for generating and controlling a discharge plasma
US7622393B2 (en) 2005-11-04 2009-11-24 Tokyo Electron Limited Method and apparatus for manufacturing a semiconductor device, control program thereof and computer-readable storage medium storing the control program
JP2009526129A (en) 2006-02-09 2009-07-16 フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. Short pulse atmospheric pressure glow discharge method and apparatus
JP2009538989A (en) 2006-05-30 2009-11-12 フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. Method and apparatus for deposition using pulsed atmospheric pressure glow discharge
WO2007145513A1 (en) 2006-06-16 2007-12-21 Fujifilm Manufacturing Europe B.V. Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
EP2109876B1 (en) 2007-02-13 2015-05-06 Fuji Film Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
ATE523067T1 (en) 2008-02-08 2011-09-15 Fujifilm Mfg Europe Bv METHOD FOR PRODUCING A MULTI-LAYER STACK STRUCTURE WITH IMPROVED WVTR BOUNDARY PROPERTY
EP2528082A3 (en) 2008-02-21 2014-11-05 FUJIFILM Manufacturing Europe B.V. Plasma treatment apparatus with an atmospheric pressure glow discharge electrode configuration
EP2286436A1 (en) 2008-06-06 2011-02-23 FUJIFILM Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of moving substrate
JP2012517530A (en) 2009-02-12 2012-08-02 フジフィルム・マニュファクチュアリング・ヨーロッパ・ベスローテン・フエンノートシャップ Two-layer barrier on polymer substrate

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478878A (en) * 1981-09-01 1984-10-23 Siemens Aktiengesellschaft Method for the preparation of metal-free strips in the metal vapor deposition of an insulating tape
US4681780A (en) * 1983-12-01 1987-07-21 Polaroid Corporation Continuously cleaned rotary coating mask
WO2004019381A2 (en) * 1999-02-01 2004-03-04 Sigma Technologies International, Inc. Barrier coatings produced by atmospheric glow discharge
EP1403902A1 (en) * 2002-09-30 2004-03-31 Fuji Photo Film B.V. Method and arrangement for generating an atmospheric pressure glow discharge plasma (APG)
US20050079418A1 (en) * 2003-10-14 2005-04-14 3M Innovative Properties Company In-line deposition processes for thin film battery fabrication
WO2007078556A1 (en) * 2005-12-28 2007-07-12 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
WO2007089146A1 (en) * 2006-02-02 2007-08-09 Fujifilm Manufacturing Europe B.V. Method for surface treatment by plasma and surface treatment apparatus

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8323753B2 (en) 2006-05-30 2012-12-04 Fujifilm Manufacturing Europe B.V. Method for deposition using pulsed atmospheric pressure glow discharge
US8338307B2 (en) 2007-02-13 2012-12-25 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
US8445897B2 (en) 2008-02-08 2013-05-21 Fujifilm Manufacturing Europe B.V. Method for manufacturing a multi-layer stack structure with improved WVTR barrier property
JP2011142260A (en) * 2010-01-08 2011-07-21 Ulvac Japan Ltd Etching device
US9161427B2 (en) 2010-02-17 2015-10-13 Vision Dynamics Holding B.V. Device and method for generating a plasma discharge for patterning the surface of a substrate
WO2011102711A1 (en) * 2010-02-17 2011-08-25 Vision Dynamics Holding B.V. Device and method for generating a plasma discharge for patterning the surface of a substrate
ITUD20110077A1 (en) * 2011-05-31 2012-12-01 Genefinity S R L EQUIPMENT FOR DEPOSITION OF THIN FILMS ON A FLEXIBLE SUBSTRATE AND ITS PROCEDURE
EP2620519A1 (en) * 2012-01-24 2013-07-31 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Vacuum deposition apparatus
EA028651B1 (en) * 2012-12-21 2017-12-29 Асахи Гласс Компани Лимитед Pair of electrodes for dielectric barrier discharge (dbd) plasma process
WO2014097621A1 (en) * 2012-12-21 2014-06-26 Asahi Glass Company Limited Pair of electrodes for dbd plasma process
US10276352B2 (en) 2012-12-21 2019-04-30 AGC Inc. Pair of electrodes for DBD plasma process
CN104167347A (en) * 2014-08-04 2014-11-26 苏州工业职业技术学院 Plate-type water cooling electrode assembly plasma surface treatment device with continuous treatment function
WO2016193406A1 (en) 2015-06-04 2016-12-08 Hochschule Für Angewandte Wissenschaft Und Kunst Hildesheim/Holzminden/Göttingen Device for the plasma treatment of objects, in particular in strip form
DE102015108884A1 (en) 2015-06-04 2016-12-08 Hochschule für Angewandte Wissenschaft und Kunst - Hildesheim/Holzminden/Göttingen Apparatus for the plasma treatment of in particular band-shaped objects
CN107683632A (en) * 2015-06-04 2018-02-09 希尔德斯海姆霍尔茨明登哥廷根应用科学和艺术大学 Apparatus for plasma treatment of especially strip-shaped objects
CN107683632B (en) * 2015-06-04 2021-02-19 希尔德斯海姆霍尔茨明登哥廷根应用科学和艺术大学 Device for plasma treatment of especially strip-shaped objects

Also Published As

Publication number Publication date
EP2235735A1 (en) 2010-10-06
JP2011512616A (en) 2011-04-21
EP2235735B1 (en) 2015-09-30
US20110042347A1 (en) 2011-02-24
US8702999B2 (en) 2014-04-22
JP5597551B2 (en) 2014-10-01

Similar Documents

Publication Publication Date Title
EP2235735B1 (en) Method and apparatus for plasma surface treatment of a moving substrate
JP5506401B2 (en) Substrate plasma processing using magnetic mask devices
US8609203B2 (en) Method and apparatus for plasma surface treatment of moving substrate
EP2351472B1 (en) Improvements relating to additive manufacturing processes
KR101641475B1 (en) Apparatus and method for the electrolytic treatment of a plate-shaped product
KR102057750B1 (en) A method for making partially metallized precision synthetic thread square mesh fabrics for aesthetic or marking applications
JP2013519991A (en) Apparatus and method for generating plasma discharge for patterning a surface of a substrate
KR102030224B1 (en) Method for making flexible circuits
WO2006100030A1 (en) Method and system for plasma treatment under high pressure
CN104145040A (en) Surface
US20120288637A1 (en) Methods of affecting material properties and applications therefor
EP2546636A1 (en) Method for forming gas sensing layers
US8758697B2 (en) Device and method for microstructured plasma treatment
Zapka et al. Low temperature chemical post-treatment of inkjet printed nano-particle silver inks
KR100871342B1 (en) Roll-to-Roll Printing Device and Printing Method
WO2018031234A1 (en) Silver ion carboxylate primary alkylamine complexes
EP3052319B1 (en) Method for the measurement of the volumetric capacity of a textured surface and device for performing the said method
KR101141026B1 (en) Method for removing hydrophobic coating layer
KR101615939B1 (en) Plating Apparatus of Roll to Roll Type Cylinder for Printed Electronics
Xie et al. Measurement of hexagonal super-lattice pattern in a dielectric barrier discharge
Grisotto Localized Organic Electrografting on Conductive and Semiconductive Surfaces Induced by Local Probe Electrochemical Microscopy
HK1206194B (en) A method for making partially metallized precision synthetic thread square mesh fabrics for aesthetic or marking applications
JP2008047585A (en) Wiring board manufacturing method and mask

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09707047

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009707047

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2010544903

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12865710

Country of ref document: US