WO2009120862A3 - Systems and methods for distributing gas in a chemical vapor deposition reactor - Google Patents

Systems and methods for distributing gas in a chemical vapor deposition reactor Download PDF

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Publication number
WO2009120862A3
WO2009120862A3 PCT/US2009/038393 US2009038393W WO2009120862A3 WO 2009120862 A3 WO2009120862 A3 WO 2009120862A3 US 2009038393 W US2009038393 W US 2009038393W WO 2009120862 A3 WO2009120862 A3 WO 2009120862A3
Authority
WO
WIPO (PCT)
Prior art keywords
systems
methods
vapor deposition
chemical vapor
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/038393
Other languages
French (fr)
Other versions
WO2009120862A2 (en
Inventor
Wenjun Qin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GT SOLAR Inc
Original Assignee
GT SOLAR Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GT SOLAR Inc filed Critical GT SOLAR Inc
Priority to CN200980116944.2A priority Critical patent/CN102027156A/en
Priority to RU2010143559/02A priority patent/RU2499081C2/en
Priority to US12/934,393 priority patent/US8961689B2/en
Priority to JP2011502054A priority patent/JP5727362B2/en
Priority to EP09725665A priority patent/EP2271788A2/en
Publication of WO2009120862A2 publication Critical patent/WO2009120862A2/en
Publication of WO2009120862A3 publication Critical patent/WO2009120862A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Systems and methods for the production of polysilicon or another material via chemical vapor deposition in a reactor are provided in which gas is distributed using a silicon standpipe. The silicon standpipe can be attached to the reactor system using a nozzle coupler such that precursor gases may be injected to various portions of the reaction chamber. As a result, gas flow can be improved throughout the reactor chamber, which can increase the yield of polysilicon, improve the quality of polysilicon, and reduce the consumption of energy.
PCT/US2009/038393 2008-03-26 2009-03-26 Systems and methods for distributing gas in a chemical vapor deposition reactor Ceased WO2009120862A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN200980116944.2A CN102027156A (en) 2008-03-26 2009-03-26 Systems and methods for gas distribution in a chemical vapor deposition reactor
RU2010143559/02A RU2499081C2 (en) 2008-03-26 2009-03-26 Systems and methods to distribute gas in reactor for chemical deposition from steam phase
US12/934,393 US8961689B2 (en) 2008-03-26 2009-03-26 Systems and methods for distributing gas in a chemical vapor deposition reactor
JP2011502054A JP5727362B2 (en) 2008-03-26 2009-03-26 System and method for flowing gas through a chemical vapor deposition reactor
EP09725665A EP2271788A2 (en) 2008-03-26 2009-03-26 Systems and methods for distributing gas in a chemical vapor deposition reactor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3975808P 2008-03-26 2008-03-26
US61/039,758 2008-03-26

Publications (2)

Publication Number Publication Date
WO2009120862A2 WO2009120862A2 (en) 2009-10-01
WO2009120862A3 true WO2009120862A3 (en) 2010-01-28

Family

ID=40998593

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/038393 Ceased WO2009120862A2 (en) 2008-03-26 2009-03-26 Systems and methods for distributing gas in a chemical vapor deposition reactor

Country Status (9)

Country Link
US (1) US8961689B2 (en)
EP (1) EP2271788A2 (en)
JP (1) JP5727362B2 (en)
KR (1) KR101623458B1 (en)
CN (2) CN104357807B (en)
MY (1) MY156940A (en)
RU (1) RU2499081C2 (en)
TW (1) TWI494458B (en)
WO (1) WO2009120862A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2271788A2 (en) * 2008-03-26 2011-01-12 GT Solar Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor
CN102713001B (en) 2009-11-18 2014-03-05 瑞科硅公司 Fluid bed reactor
US8993056B2 (en) * 2009-12-17 2015-03-31 Savi Research, Inc. Method of gas distribution and nozzle design in the improved chemical vapor deposition of polysilicon reactor
US9315895B2 (en) * 2010-05-10 2016-04-19 Mitsubishi Materials Corporation Apparatus for producing polycrystalline silicon
KR101146864B1 (en) 2011-10-27 2012-05-16 웅진폴리실리콘주식회사 Polysilicon manufacturing reactor
DE102013206236A1 (en) * 2013-04-09 2014-10-09 Wacker Chemie Ag Gas distributor for Siemens reactor
RU2582077C2 (en) * 2014-09-04 2016-04-20 Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук (ИТ СО РАН) Device for application of functional layers of thin-film solar cells on substrate by deposition in plasma of low-frequency induction discharge of low-pressure transformer
KR101895526B1 (en) * 2015-08-28 2018-09-05 한화케미칼 주식회사 Polysilicon manufacturing apparatus
FR3044024B1 (en) * 2015-11-19 2017-12-22 Herakles DEVICE FOR COATING ONE OR MORE WIRES BY A STEAM-PHASE DEPOSITION PROCESS
FR3044023B1 (en) * 2015-11-19 2017-12-22 Herakles DEVICE FOR COATING ONE OR MORE WIRES BY A STEAM-PHASE DEPOSITION PROCESS
AT518081B1 (en) * 2015-12-22 2017-07-15 Sico Tech Gmbh Injector made of silicon for the semiconductor industry
CN112342529B (en) * 2020-09-24 2022-12-06 杭州盾源聚芯半导体科技有限公司 Injection pipe with connector

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3058812A (en) * 1958-05-29 1962-10-16 Westinghouse Electric Corp Process and apparatus for producing silicon
US6221155B1 (en) * 1997-12-15 2001-04-24 Advanced Silicon Materials, Llc Chemical vapor deposition system for polycrystalline silicon rod production
EP1162652A2 (en) * 2000-06-09 2001-12-12 Asm Japan K.K. Semiconductor-manufacturing device
US20060185589A1 (en) * 2005-02-23 2006-08-24 Raanan Zehavi Silicon gas injector and method of making

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1123300B (en) * 1960-06-03 1962-02-08 Siemens Ag Process for the production of silicon or germanium
US3293950A (en) * 1965-01-15 1966-12-27 Dow Corning Wire drawing die
DE2050076C3 (en) * 1970-10-12 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for manufacturing tubes from semiconductor material
BE806098A (en) * 1973-03-28 1974-02-01 Siemens Ag PROCESS FOR MANUFACTURING SILICON OR OTHER VERY PURE SEMI-CONDUCTIVE MATERIAL
DE2324365C3 (en) * 1973-05-14 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reaction vessel for depositing semiconductor material on heated substrates
DE2508802A1 (en) * 1975-02-28 1976-09-09 Siemens Ag METHOD OF DEPOSITING ELEMENTAL SILICON
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas
DE2541215C3 (en) * 1975-09-16 1978-08-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Process for the production of hollow silicon bodies
US4148931A (en) * 1976-03-08 1979-04-10 Siemens Aktiengesellschaft Process for depositing elemental silicon semiconductor material from a gas phase
DE2609564A1 (en) * 1976-03-08 1977-09-15 Siemens Ag PROCESS FOR SEPARATING ELEMENTAL SILICON FROM THE GAS PHASE
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
JPS53108029A (en) * 1977-03-03 1978-09-20 Komatsu Mfg Co Ltd Method of making high purity silicon having uniform shape
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
DE2831816A1 (en) * 1978-07-19 1980-01-31 Siemens Ag METHOD FOR DEPOSITING SILICON IN FINE CRYSTALLINE FORM
DE2831819A1 (en) * 1978-07-19 1980-01-31 Siemens Ag METHOD FOR DEPOSITING SILICON IN FINE CRYSTALLINE FORM
DE2912661C2 (en) * 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Process for the deposition of pure semiconductor material and nozzle for carrying out the process
JPS56105622A (en) * 1980-01-25 1981-08-22 Koujiyundo Silicon Kk Manufacture of silicon stick for semiconductor
US4681652A (en) * 1980-06-05 1987-07-21 Rogers Leo C Manufacture of polycrystalline silicon
US4374110A (en) * 1981-06-15 1983-02-15 Motorola, Inc. Purification of silicon source materials
US4481232A (en) * 1983-05-27 1984-11-06 The United States Of America As Represented By The Department Of Energy Method and apparatus for producing high purity silicon
JPS61101410A (en) * 1984-10-24 1986-05-20 Hiroshi Ishizuka Production of polycrystalline silicon and apparatus therefor
JPS6374909A (en) * 1986-09-19 1988-04-05 Shin Etsu Handotai Co Ltd Production of polycrystalline silicon rod having large diameter
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5064367A (en) 1989-06-28 1991-11-12 Digital Equipment Corporation Conical gas inlet for thermal processing furnace
JPH0729874B2 (en) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 Bridge for connecting core wires of polycrystalline silicon manufacturing equipment
RU2023050C1 (en) 1991-09-17 1994-11-15 Валентин Михайлович Шитов Peephole for vacuum chamber
DE4133885C2 (en) * 1991-10-12 1996-03-21 Bosch Gmbh Robert Three-dimensional silicon structure
JP2867306B2 (en) * 1991-11-15 1999-03-08 三菱マテリアルポリシリコン株式会社 Method and apparatus for producing semiconductor grade polycrystalline silicon
US5478396A (en) 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5382412A (en) * 1992-10-16 1995-01-17 Korea Research Institute Of Chemical Technology Fluidized bed reactor heated by microwaves
GB2271518B (en) * 1992-10-16 1996-09-25 Korea Res Inst Chem Tech Heating of fluidized bed reactor by microwave
JPH07508257A (en) 1993-04-16 1995-09-14 リビー−オーウェンズ−フォード・カンパニー Method and apparatus for coating glass substrates
US6418318B1 (en) * 1995-12-12 2002-07-09 At&T Wireless Services, Inc. Method for selecting a preferable wireless communications service provider in a multi-service provider environment
US5885358A (en) 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
DE19735378A1 (en) * 1997-08-14 1999-02-18 Wacker Chemie Gmbh Process for the production of high-purity silicon granules
US6544333B2 (en) * 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
WO2000049199A1 (en) * 1999-02-19 2000-08-24 Gt Equipment Technologies Inc. Method and apparatus for chemical vapor deposition of polysilicon
US6365225B1 (en) * 1999-02-19 2002-04-02 G.T. Equipment Technologies, Inc. Cold wall reactor and method for chemical vapor deposition of bulk polysilicon
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
WO2001075188A2 (en) 2000-03-30 2001-10-11 Tokyo Electron Limited Method of and apparatus for gas injection
US6716302B2 (en) 2000-11-01 2004-04-06 Applied Materials Inc. Dielectric etch chamber with expanded process window
DE10101040A1 (en) * 2001-01-11 2002-07-25 Wacker Chemie Gmbh Device and method for producing a polycrystalline silicon rod
US6902622B2 (en) 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
US6623801B2 (en) * 2001-07-30 2003-09-23 Komatsu Ltd. Method of producing high-purity polycrystalline silicon
US6864480B2 (en) * 2001-12-19 2005-03-08 Sau Lan Tang Staats Interface members and holders for microfluidic array devices
US7217336B2 (en) 2002-06-20 2007-05-15 Tokyo Electron Limited Directed gas injection apparatus for semiconductor processing
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US7722719B2 (en) 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US7323047B2 (en) 2005-03-25 2008-01-29 Kyocera Corporation Method for manufacturing granular silicon crystal
EP1893529A2 (en) * 2005-04-10 2008-03-05 Rec Silicon, Inc. Production of polycrystalline silicon
US20070187363A1 (en) 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
KR100768147B1 (en) * 2006-05-11 2007-10-18 한국화학연구원 Method for manufacturing polycrystalline silicon rod using mixed core means and apparatus for manufacturing same
KR100768148B1 (en) * 2006-05-22 2007-10-17 한국화학연구원 Method for producing polycrystalline silicon rod using metal core means
JP4464949B2 (en) * 2006-11-10 2010-05-19 株式会社日立国際電気 Substrate processing apparatus and selective epitaxial film growth method
JP5119856B2 (en) * 2006-11-29 2013-01-16 三菱マテリアル株式会社 Trichlorosilane production equipment
EP2039653B1 (en) * 2007-09-20 2015-12-23 Mitsubishi Materials Corporation Reactor for polycrystalline silicon and polycrystalline silicon production method
US8043470B2 (en) * 2007-11-21 2011-10-25 Lam Research Corporation Electrode/probe assemblies and plasma processing chambers incorporating the same
US20090191336A1 (en) * 2008-01-30 2009-07-30 Mohan Chandra Method and apparatus for simpified startup of chemical vapor deposition of polysilicon
EP2271788A2 (en) * 2008-03-26 2011-01-12 GT Solar Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor
EP2271587A1 (en) * 2008-03-26 2011-01-12 GT Solar Incorporated Gold-coated polysilicon reactor system and method
CN102300808B (en) * 2009-02-27 2013-08-21 株式会社德山 Polycrystalline silicon rod and device for producing same
US8931431B2 (en) * 2009-03-25 2015-01-13 The Regents Of The University Of Michigan Nozzle geometry for organic vapor jet printing
KR20130049184A (en) * 2010-03-19 2013-05-13 지티에이티 코포레이션 System and method for polycrystalline silicon deposition
JP5739456B2 (en) * 2011-01-21 2015-06-24 信越化学工業株式会社 Polycrystalline silicon manufacturing apparatus and polycrystalline silicon manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3058812A (en) * 1958-05-29 1962-10-16 Westinghouse Electric Corp Process and apparatus for producing silicon
US6221155B1 (en) * 1997-12-15 2001-04-24 Advanced Silicon Materials, Llc Chemical vapor deposition system for polycrystalline silicon rod production
EP1162652A2 (en) * 2000-06-09 2001-12-12 Asm Japan K.K. Semiconductor-manufacturing device
US20060185589A1 (en) * 2005-02-23 2006-08-24 Raanan Zehavi Silicon gas injector and method of making

Also Published As

Publication number Publication date
KR101623458B1 (en) 2016-05-23
RU2499081C2 (en) 2013-11-20
KR20100126569A (en) 2010-12-01
WO2009120862A2 (en) 2009-10-01
RU2010143559A (en) 2012-05-10
CN102027156A (en) 2011-04-20
JP2011515590A (en) 2011-05-19
JP5727362B2 (en) 2015-06-03
EP2271788A2 (en) 2011-01-12
US8961689B2 (en) 2015-02-24
TW201002853A (en) 2010-01-16
CN104357807A (en) 2015-02-18
TWI494458B (en) 2015-08-01
US20110129621A1 (en) 2011-06-02
MY156940A (en) 2016-04-15
CN104357807B (en) 2019-06-28

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