WO2009134629A3 - Anisotropic conductive film attachment for radiation detector - Google Patents

Anisotropic conductive film attachment for radiation detector Download PDF

Info

Publication number
WO2009134629A3
WO2009134629A3 PCT/US2009/040927 US2009040927W WO2009134629A3 WO 2009134629 A3 WO2009134629 A3 WO 2009134629A3 US 2009040927 W US2009040927 W US 2009040927W WO 2009134629 A3 WO2009134629 A3 WO 2009134629A3
Authority
WO
WIPO (PCT)
Prior art keywords
radiation detector
conductive film
anisotropic conductive
circuit board
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/040927
Other languages
French (fr)
Other versions
WO2009134629A2 (en
Inventor
Pinghe Lu
Henry Chen
Glenn Bindley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Redlen Technologies Inc
Original Assignee
Redlen Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Redlen Technologies Inc filed Critical Redlen Technologies Inc
Priority to EP09739431.6A priority Critical patent/EP2289112A4/en
Publication of WO2009134629A2 publication Critical patent/WO2009134629A2/en
Publication of WO2009134629A3 publication Critical patent/WO2009134629A3/en
Priority to IL208986A priority patent/IL208986A0/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

A device includes (a) radiation detector including a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of said semiconductor substrate, and a plurality of anode electrodes on the rear surface of said semiconductor substrate, (b) a printed circuit board, and (c) an electrically conductive polymeric film disposed between circuit board and the anode electrodes. The polymeric film contains electrically conductive wires. The film bonds and electrically connects the printed circuit board and anode electrodes.
PCT/US2009/040927 2008-04-29 2009-04-17 Act attachment for radiation detector Ceased WO2009134629A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP09739431.6A EP2289112A4 (en) 2008-04-29 2009-04-17 Act attachment for radiation detector
IL208986A IL208986A0 (en) 2008-04-29 2010-10-28 Acf attachment for radiation detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/111,413 2008-04-29
US12/111,413 US8071953B2 (en) 2008-04-29 2008-04-29 ACF attachment for radiation detector

Publications (2)

Publication Number Publication Date
WO2009134629A2 WO2009134629A2 (en) 2009-11-05
WO2009134629A3 true WO2009134629A3 (en) 2010-01-21

Family

ID=41255680

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/040927 Ceased WO2009134629A2 (en) 2008-04-29 2009-04-17 Act attachment for radiation detector

Country Status (4)

Country Link
US (1) US8071953B2 (en)
EP (1) EP2289112A4 (en)
IL (1) IL208986A0 (en)
WO (1) WO2009134629A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5753802B2 (en) * 2012-01-27 2015-07-22 株式会社日立製作所 Semiconductor radiation detector and nuclear medicine diagnostic equipment
CN106324649B (en) * 2016-08-31 2023-09-15 同方威视技术股份有限公司 semiconductor detector
US10203420B2 (en) 2017-05-11 2019-02-12 Redlen Technologies, Inc. Dual sided tape attachment to cathode electrode of radiation detector
US12372672B2 (en) 2019-10-18 2025-07-29 The University Of North Carolina At Chapel Hill Membrane-perovskite films, devices, and methods of preparation

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WO2004097938A1 (en) * 2003-03-27 2004-11-11 Ajat Oy, Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
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KR100539082B1 (en) * 2003-10-01 2006-01-10 주식회사 네패스 Package Structure of Semiconductor Imaging Device and Manufacturing Method Thereof

Also Published As

Publication number Publication date
US20090321651A1 (en) 2009-12-31
EP2289112A2 (en) 2011-03-02
IL208986A0 (en) 2011-01-31
US8071953B2 (en) 2011-12-06
EP2289112A4 (en) 2017-08-30
WO2009134629A2 (en) 2009-11-05

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