WO2009138906A3 - Mems devices and fabrication thereof - Google Patents

Mems devices and fabrication thereof Download PDF

Info

Publication number
WO2009138906A3
WO2009138906A3 PCT/IB2009/051859 IB2009051859W WO2009138906A3 WO 2009138906 A3 WO2009138906 A3 WO 2009138906A3 IB 2009051859 W IB2009051859 W IB 2009051859W WO 2009138906 A3 WO2009138906 A3 WO 2009138906A3
Authority
WO
WIPO (PCT)
Prior art keywords
beam layer
metal
layer
fabrication
mems devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2009/051859
Other languages
French (fr)
Other versions
WO2009138906A2 (en
Inventor
Robertus T. F. Van Schaijk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Priority to US12/990,123 priority Critical patent/US8853797B2/en
Priority to EP09746201A priority patent/EP2285734A2/en
Publication of WO2009138906A2 publication Critical patent/WO2009138906A2/en
Publication of WO2009138906A3 publication Critical patent/WO2009138906A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/016—Switches characterised by the shape having a bridge fixed on two ends and connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Laminated Bodies (AREA)

Abstract

A MEMS device and method, comprising: a substrate; a beam; and a cavity located therebetween; the beam comprising a first beam layer and a second beam layer, the first beam layer being directly adjacent to the cavity, the second beam layer being directly adjacent to the first beam layer; the first beam layer comprising a metal or a metal alloy containing silicon; and the second beam layer comprising a metal or a metal alloy substantially not containing silicon. Preferably the second beam layer is thicker than the first beam layer e.g. at least five times thicker, and the first beam layer comprises a metal or alloy containing between 1 % and 2% of silicon. The second beam layer provides desired mechanical and/ or optical properties whilst the first beam layer prevents spiking.
PCT/IB2009/051859 2008-05-12 2009-05-06 Mems devices and fabrication thereof Ceased WO2009138906A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/990,123 US8853797B2 (en) 2008-05-12 2009-05-06 MEMS devices and fabrication thereof
EP09746201A EP2285734A2 (en) 2008-05-12 2009-05-06 Mems devices and fabrication thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08103929.9 2008-05-12
EP08103929 2008-05-12

Publications (2)

Publication Number Publication Date
WO2009138906A2 WO2009138906A2 (en) 2009-11-19
WO2009138906A3 true WO2009138906A3 (en) 2010-06-10

Family

ID=41319117

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2009/051859 Ceased WO2009138906A2 (en) 2008-05-12 2009-05-06 Mems devices and fabrication thereof

Country Status (3)

Country Link
US (1) US8853797B2 (en)
EP (1) EP2285734A2 (en)
WO (1) WO2009138906A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003081725A2 (en) * 2002-03-18 2003-10-02 Nanonexus, Inc. A miniaturized contact spring
WO2004081263A1 (en) * 2003-03-10 2004-09-23 Micro Relay Holdings Pty Ltd Electroplating pcb components
US20050012577A1 (en) * 2002-05-07 2005-01-20 Raytheon Company, A Delaware Corporation Micro-electro-mechanical switch, and methods of making and using it
GB2436460A (en) * 2006-03-20 2007-09-26 Wolfson Microelectronics Plc MEMS capacitive microphone
US20080055704A1 (en) * 2006-09-06 2008-03-06 Texas Instruments Incorporated Spatial light modulator mirror metal having enhanced reflectivity

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69127347T2 (en) 1990-11-29 1998-02-05 At & T Corp Method of making contact for integrated circuits
US7460291B2 (en) * 1994-05-05 2008-12-02 Idc, Llc Separable modulator
US7071520B2 (en) * 2000-08-23 2006-07-04 Reflectivity, Inc MEMS with flexible portions made of novel materials
US7057246B2 (en) * 2000-08-23 2006-06-06 Reflectivity, Inc Transition metal dielectric alloy materials for MEMS
US6906847B2 (en) * 2000-12-07 2005-06-14 Reflectivity, Inc Spatial light modulators with light blocking/absorbing areas
US6768403B2 (en) * 2002-03-12 2004-07-27 Hrl Laboratories, Llc Torsion spring for electro-mechanical switches and a cantilever-type RF micro-electromechanical switch incorporating the torsion spring
JP3760810B2 (en) * 2001-07-06 2006-03-29 ソニー株式会社 Light modulation element, GLV device, and laser display
US7057251B2 (en) * 2001-07-20 2006-06-06 Reflectivity, Inc MEMS device made of transition metal-dielectric oxide materials
US7781850B2 (en) * 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US6917459B2 (en) * 2003-06-03 2005-07-12 Hewlett-Packard Development Company, L.P. MEMS device and method of forming MEMS device
US7119945B2 (en) * 2004-03-03 2006-10-10 Idc, Llc Altering temporal response of microelectromechanical elements
US7476327B2 (en) * 2004-05-04 2009-01-13 Idc, Llc Method of manufacture for microelectromechanical devices
US7205176B2 (en) * 2004-05-24 2007-04-17 Taiwan Semiconductor Manufacturing Company Surface MEMS mirrors with oxide spacers
US7382515B2 (en) * 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US9048809B2 (en) * 2012-01-03 2015-06-02 International Business Machines Corporation Method of manufacturing switchable filters

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003081725A2 (en) * 2002-03-18 2003-10-02 Nanonexus, Inc. A miniaturized contact spring
US20050012577A1 (en) * 2002-05-07 2005-01-20 Raytheon Company, A Delaware Corporation Micro-electro-mechanical switch, and methods of making and using it
WO2004081263A1 (en) * 2003-03-10 2004-09-23 Micro Relay Holdings Pty Ltd Electroplating pcb components
GB2436460A (en) * 2006-03-20 2007-09-26 Wolfson Microelectronics Plc MEMS capacitive microphone
US20080055704A1 (en) * 2006-09-06 2008-03-06 Texas Instruments Incorporated Spatial light modulator mirror metal having enhanced reflectivity

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FRITSCHI R ET AL: "High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL LNKD- DOI:10.1016/S0167-9317(04)00189-3, vol. 73-74, 1 June 2004 (2004-06-01), pages 447 - 451, XP004564642, ISSN: 0167-9317 *

Also Published As

Publication number Publication date
WO2009138906A2 (en) 2009-11-19
EP2285734A2 (en) 2011-02-23
US20110260267A1 (en) 2011-10-27
US8853797B2 (en) 2014-10-07

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