WO2011056783A3 - Etching process for semiconductors - Google Patents

Etching process for semiconductors Download PDF

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Publication number
WO2011056783A3
WO2011056783A3 PCT/US2010/055096 US2010055096W WO2011056783A3 WO 2011056783 A3 WO2011056783 A3 WO 2011056783A3 US 2010055096 W US2010055096 W US 2010055096W WO 2011056783 A3 WO2011056783 A3 WO 2011056783A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductors
etching
semiconductor
etching process
etching mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/055096
Other languages
French (fr)
Other versions
WO2011056783A2 (en
Inventor
Michael A. Haase
Terry L. Smith
Jun-Ying Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Priority to JP2012537938A priority Critical patent/JP5723377B2/en
Priority to CN2010800506808A priority patent/CN102893378A/en
Priority to EP10828972A priority patent/EP2499663A2/en
Publication of WO2011056783A2 publication Critical patent/WO2011056783A2/en
Publication of WO2011056783A3 publication Critical patent/WO2011056783A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.
PCT/US2010/055096 2009-11-09 2010-11-02 Etching process for semiconductors Ceased WO2011056783A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012537938A JP5723377B2 (en) 2009-11-09 2010-11-02 Etching process for semiconductors
CN2010800506808A CN102893378A (en) 2009-11-09 2010-11-02 Etching process for semiconductors
EP10828972A EP2499663A2 (en) 2009-11-09 2010-11-02 Etching process for semiconductors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25929909P 2009-11-09 2009-11-09
US61/259,299 2009-11-09

Publications (2)

Publication Number Publication Date
WO2011056783A2 WO2011056783A2 (en) 2011-05-12
WO2011056783A3 true WO2011056783A3 (en) 2011-07-28

Family

ID=43970710

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/055096 Ceased WO2011056783A2 (en) 2009-11-09 2010-11-02 Etching process for semiconductors

Country Status (7)

Country Link
US (1) US8765611B2 (en)
EP (1) EP2499663A2 (en)
JP (1) JP5723377B2 (en)
KR (1) KR20120095411A (en)
CN (1) CN102893378A (en)
TW (1) TW201135832A (en)
WO (1) WO2011056783A2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5710433B2 (en) * 2011-09-13 2015-04-30 株式会社東芝 Film forming apparatus cleaning method and film forming apparatus
FR2984769B1 (en) * 2011-12-22 2014-03-07 Total Sa METHOD FOR TEXTURING THE SURFACE OF A SILICON SUBSTRATE, STRUCTURED SUBSTRATE, AND PHOTOVOLTAIC DEVICE COMPRISING SUCH A STRUCTURED SUBSTRATE
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
US9515223B2 (en) 2012-08-21 2016-12-06 Oji Holdings Corporation Semiconductor light emitting device substrate including an uneven structure having convex portions, and a flat surface therebetween
WO2014051909A1 (en) * 2012-09-25 2014-04-03 Applied Materials, Inc. Chamber clean with in gas heating source
CN103901516B (en) * 2012-12-26 2016-06-15 清华大学 The preparation method of grating
US8941145B2 (en) * 2013-06-17 2015-01-27 The Boeing Company Systems and methods for dry etching a photodetector array
US9012305B1 (en) * 2014-01-29 2015-04-21 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean
JP6871706B2 (en) * 2016-09-30 2021-05-12 日機装株式会社 Manufacturing method of semiconductor light emitting device
KR102666776B1 (en) * 2019-05-10 2024-05-21 삼성디스플레이 주식회사 Method of manufacturing thin film transistor, method of manufacturing display apparatus and thin film transistor substrate
CN113874547B (en) * 2019-11-12 2024-06-18 株式会社力森诺科 Deposit removal method and film forming method
WO2022110005A1 (en) * 2020-11-27 2022-06-02 苏州晶湛半导体有限公司 Semiconductor light-emitting device and preparation method therefor
CN113823992B (en) * 2021-09-14 2022-11-11 苏州长瑞光电有限公司 Semiconductor device manufacturing method and semiconductor device
CN115343788B (en) * 2022-08-18 2024-03-15 上海交通大学 Quartz micro-lens preparation method based on cyclic etching process and quartz micro-lens
CN117525220A (en) * 2023-11-17 2024-02-06 北京北方华创微电子装备有限公司 Semiconductor device manufacturing method and semiconductor process equipment
WO2025153009A1 (en) * 2024-01-17 2025-07-24 The Hong Kong University Of Science And Technology Apparatus and method for dry etching of aluminum gallium arsenide optical waveguides using argon gas plasma

Citations (4)

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US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6933242B1 (en) * 1999-06-21 2005-08-23 Surface Technology Systems Plc Plasma etching
US20080050854A1 (en) * 2002-04-05 2008-02-28 Kabushiki Kaisha Toshiba Semiconductor Light Emitting Element and Method for Manufacturing the Same
US20080050922A1 (en) * 2006-08-23 2008-02-28 Applied Materials, Inc. Chamber recovery after opening barrier over copper

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JPH0294522A (en) * 1988-09-30 1990-04-05 Toshiba Corp Dry etching method
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
JP3502096B2 (en) * 1992-06-22 2004-03-02 ラム リサーチ コーポレイション Plasma cleaning method for removing residue in plasma processing apparatus
DE4241045C1 (en) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Process for anisotropic etching of silicon
JPH07335620A (en) * 1994-06-09 1995-12-22 Sony Corp Method for selective dry etching of II-VI group compound semiconductor
EP0774772A1 (en) 1995-11-17 1997-05-21 Applied Materials, Inc. Methods for physically etching silicon electrically conducting surfaces
DE19736370C2 (en) * 1997-08-21 2001-12-06 Bosch Gmbh Robert Process for anisotropic etching of silicon
KR100269323B1 (en) * 1998-01-16 2000-10-16 윤종용 Method for etching platinum layer in semiconductor device
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DE10247913A1 (en) * 2002-10-14 2004-04-22 Robert Bosch Gmbh Process for the anisotropic etching of structures in a substrate arranged in an etching chamber used in semiconductor manufacture comprises using an etching gas and a passivating gas which is fed to the chamber in defined periods
US7238970B2 (en) * 2003-10-30 2007-07-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
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US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
WO2008083188A2 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Led light source with converging extractor in an optical element
US8179034B2 (en) * 2007-07-13 2012-05-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display and lighting devices
CN101472455A (en) 2007-12-29 2009-07-01 3M创新有限公司 Electromagnetic shielding liner and method for filling clearance of electromagnetic shielding system
WO2011008476A1 (en) * 2009-06-30 2011-01-20 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction

Patent Citations (4)

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US6933242B1 (en) * 1999-06-21 2005-08-23 Surface Technology Systems Plc Plasma etching
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US20080050854A1 (en) * 2002-04-05 2008-02-28 Kabushiki Kaisha Toshiba Semiconductor Light Emitting Element and Method for Manufacturing the Same
US20080050922A1 (en) * 2006-08-23 2008-02-28 Applied Materials, Inc. Chamber recovery after opening barrier over copper

Also Published As

Publication number Publication date
EP2499663A2 (en) 2012-09-19
CN102893378A (en) 2013-01-23
JP5723377B2 (en) 2015-05-27
US8765611B2 (en) 2014-07-01
TW201135832A (en) 2011-10-16
KR20120095411A (en) 2012-08-28
JP2013510442A (en) 2013-03-21
US20110108956A1 (en) 2011-05-12
WO2011056783A2 (en) 2011-05-12

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