WO2012059878A1 - Edge isolation by lift-off - Google Patents

Edge isolation by lift-off Download PDF

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Publication number
WO2012059878A1
WO2012059878A1 PCT/IB2011/054891 IB2011054891W WO2012059878A1 WO 2012059878 A1 WO2012059878 A1 WO 2012059878A1 IB 2011054891 W IB2011054891 W IB 2011054891W WO 2012059878 A1 WO2012059878 A1 WO 2012059878A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
coating
edge
conductive film
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2011/054891
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French (fr)
Inventor
Arthur Buechel
Pierre Papet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meyer Burger Germany GmbH
Original Assignee
Roth and Rau AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth and Rau AG filed Critical Roth and Rau AG
Publication of WO2012059878A1 publication Critical patent/WO2012059878A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to crystalline Si based photovoltaic devices, and more particularly to a method for prevention of electrical short-circuits between a front side transparent conductive film (FTCF) and a back side conductive film (BCF) of a solar cell.
  • FTCF front side transparent conductive film
  • BCF back side conductive film
  • the present invention suggests of a novel method of electrical isolation of the front side and the back side of a hetero junction solar cell.
  • a narrow line of coating is deposited on cell edge before the FTCF and/or the BCF deposition.
  • the coating is removed (for instance by a lift-off technique) and the area where the coating was creates an electrical insulator between the front side transparent conductive film and the back side conductive film.
  • This technique doesn't create damages on the wafer (carrier recombination areas) and on amorphous or microcrystalline layer that tend to occur with laser ablation processes. Moreover, an additional advantage is that no shunts occur when the contact ribbon is attached to the cell.
  • front and back side conductive layers present a larger surface by this technique compare to what we can obtain by physical masking. Increase the conductive area increases the cell output. This is an advantage when compared to physical masking.
  • Fig.1 a-d are side views in section illustrating steps of performing edge isolation by coating lift-off on one side for a hetero junction solar cell fabrication.
  • Fig.2 a-d are side views in section illustrating steps of performing edge isolation by coating lift-off on both sides for a hetero junction solar cell fabrication.
  • Fig.3 a-d are side views in section illustrating steps of performing edge isolation by coating lift-off on the wafer edge for a hetero junction solar cell fabrication.
  • Fig.4 is an example of the top view of a final solar cell with edge isolation done by coating lift-off process. In this example coating lift-off has been performed on the front side of the hetero junction solar cell.
  • a narrow line of coating is deposited along cell edge. This coating pattern is close to the wafer edge or directly on it. This narrow line must be uninterrupted.
  • the coating should be selected not to interact with conductive film deposition and should be easy to remove during the lift-off.
  • Organic resist can be used as coating.
  • Inkjet, screen printing, stencil printing, sprays, brush painting can be used as coating techniques.
  • Conductive films are deposited on one or both sides of the cell or simply on the edge of the cell.
  • the fine line of coating is removed of the cell by using a remover solution.
  • This solution can be a solvent or water for water soluble coating.
  • cell can be dived into a remover solution or the remover solution can be sprayed on. Remains on the cell conductive films on both side but the area where resist was is not covered by one of these films. This area electrically isolates the front side transparent conductive film (FTCF) and the back side conductive film (BCF). This interruption avoids short circuits between the front side and the back side of the hetero junction solar cell and leads to better cell performances.
  • FTCF front side transparent conductive film
  • BCF back side conductive film
  • Fig.1 a is a sectional view of standard hetero junction solar cell.
  • a passivation layer and a doped amorphous or microcrystalline layer 13 are formed on one side of a silicon substrate 1 1 whereas an amorphous or microcrystalline layer 13 is formed on the other side.
  • Fig.1 b a Continuous narrow line of coating 15 is deposited on one side of the solar cell along its edge. Distance 14 is as small as possible to keep conduction film 17 as large as possible.
  • Fig.1 c Two conductive films 17 and 19 are deposited on each side of the solar cell.
  • a transparent conductive oxide is often used as material for the conductive film.
  • the conductive film 17 and 19 can be respectively the front side transparent conductive Film (FTCF) and the back side conductive film (BCF) or the other way around.
  • FTCF front side transparent conductive Film
  • BCF back side conductive film
  • Fig.2a is a sectional view of a standard hetero junction solar cell.
  • An amorphous or microcrystalline layer 13 is formed on one side of a silicon substrate 1 1 whereas an amorphous or microcrystalline layer 13 is formed on the other side.
  • Fig.2b a Continuous narrow line of coating 15 is deposited on both side of the solar cell along its edge. Distance 14 is as small as possible to keep conduction films 17 and 19 as large as possible.
  • Fig.2c Two conductive films 17 and 19 are deposited on each side of the solar cell.
  • a transparent conductive oxide is often used as material for the conductive film.
  • the conductive film 17 and 19 can be respectively the front side transparent conductive film (FTCF) and the back side conductive film (BCF) or the other way around.
  • FTCF front side transparent conductive film
  • BCF back side conductive film
  • Fig.3a is a sectional view of a standard hetero junction solar cell.
  • An amorphous or microcrystalline layer 13 is formed on one side of a silicon substrate 1 1 whereas an amorphous or microcrystalline layer 13 is formed on the other side.
  • Fig.3b A continuous narrow line of coating 15 is deposited on solar cell edge.
  • Fig.3c two conductive films 17 and 19 are deposited on each side of the solar cell.
  • a transparent conductive oxide is often used as material for the conductive film.
  • the conductive film 17 and 19 can be respectively the front side transparent conductive film (FTCF) and the back side conductive film (BCF) or the other way around.
  • FTCF front side transparent conductive film
  • BCF back side conductive film
  • Fig.3 is an example of the top view of the final solar cell with edge isolation done by liftoff process.
  • lift-off has been performed on the front side of the hetero junction solar cell.
  • the front transparent conductive film 46 is interrupted on cell edge 47.

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The present invention includes a method for edge isolation of conductive layers deposited on front and/or back side of a solar cell, the method comprising the steps of: fabricating a solar cell device up to the step prior to the deposition of front and/or back conductive layers, depositing/applying a narrow line of coating along cell edge on one side or on both sides or on the edge of the solar cell, depositing conductive film(s) on front and/or on back side of the solar cell, and removing the narrow line of coating with wet or dry processing step.

Description

Edge isolation by lift-off
Background of the invention
1 . Field of the invention:
The present invention relates to crystalline Si based photovoltaic devices, and more particularly to a method for prevention of electrical short-circuits between a front side transparent conductive film (FTCF) and a back side conductive film (BCF) of a solar cell.
2. State of the Art:
- Lift-off techniques are known and applied in semi-conductor industries.
- Edge isolation by laser ablation is applied on hetero junction solar cells (Sanyo patent: US005935344A).
- Prevent conductive film deposition on solar cell edge with a physical mask is known and applied to perform edge isolation.
Summary of the invention
The present invention suggests of a novel method of electrical isolation of the front side and the back side of a hetero junction solar cell. Instead of drilling the FTCF or the BCF with a laser on the solar cell edge (Sanyo patent: US005935344A) or preventing the FTCF and/or the BCF deposition on the cell edge, a narrow line of coating is deposited on cell edge before the FTCF and/or the BCF deposition. Following the FTCF and the BCF deposition, the coating is removed (for instance by a lift-off technique) and the area where the coating was creates an electrical insulator between the front side transparent conductive film and the back side conductive film.
Steps:
1 . Coat a narrow line of coating on edge or very close to the cell edge on the top and/or the bottom side before FTCF and/or the BCF deposition. Different coatings and coating techniques can be applied to form a fine line. It is important that the coating material will have little outgasing and does not affect the subsequent deposition process negatively, moreover, the coating material has to be soluble (see step 3). For example, organic resist can be used as coating. Inkjet, screen printing, stencil printing, or spraying can be used as coating techniques. 2. Deposit the front side transparent conductive film and the back side conductive film on the hetero junction solar cell. The fine line of coating is covered at least by one of these films.
3. Remove the fine line of coating with liquid or dry etching method. The FTCF or and the BCF up to the coating is by this process removed and area where the fine line of coating was, forms an interruption between this two conductive films. This interruption avoids short circuits between the front side transparent conductive film and the back side conductive film. If the coating is an organic resist, solvent can be used to remove the resist. For soluble water resist, water can be used as removing agent.
The process presented in these three steps is often called lift-off. The use of lift-off to perform edge isolation on hetero junction is the scope of the present invention.
Advantages
This technique doesn't create damages on the wafer (carrier recombination areas) and on amorphous or microcrystalline layer that tend to occur with laser ablation processes. Moreover, an additional advantage is that no shunts occur when the contact ribbon is attached to the cell.
As the lift-off is performed very close to the cell edge or directly on it, front and back side conductive layers present a larger surface by this technique compare to what we can obtain by physical masking. Increase the conductive area increases the cell output. This is an advantage when compared to physical masking.
Brief description of the drawings
Fig.1 a-d are side views in section illustrating steps of performing edge isolation by coating lift-off on one side for a hetero junction solar cell fabrication.
Fig.2 a-d are side views in section illustrating steps of performing edge isolation by coating lift-off on both sides for a hetero junction solar cell fabrication.
Fig.3 a-d are side views in section illustrating steps of performing edge isolation by coating lift-off on the wafer edge for a hetero junction solar cell fabrication. Fig.4 is an example of the top view of a final solar cell with edge isolation done by coating lift-off process. In this example coating lift-off has been performed on the front side of the hetero junction solar cell.
Detailed description of the invention
Before the deposition of the conductive films, a narrow line of coating is deposited along cell edge. This coating pattern is close to the wafer edge or directly on it. This narrow line must be uninterrupted. The coating should be selected not to interact with conductive film deposition and should be easy to remove during the lift-off. Organic resist can be used as coating. Inkjet, screen printing, stencil printing, sprays, brush painting can be used as coating techniques.
Conductive films are deposited on one or both sides of the cell or simply on the edge of the cell.
The fine line of coating is removed of the cell by using a remover solution. This solution can be a solvent or water for water soluble coating. To perform this step, cell can be dived into a remover solution or the remover solution can be sprayed on. Remains on the cell conductive films on both side but the area where resist was is not covered by one of these films. This area electrically isolates the front side transparent conductive film (FTCF) and the back side conductive film (BCF). This interruption avoids short circuits between the front side and the back side of the hetero junction solar cell and leads to better cell performances.
Fig.1 a is a sectional view of standard hetero junction solar cell. A passivation layer and a doped amorphous or microcrystalline layer 13 are formed on one side of a silicon substrate 1 1 whereas an amorphous or microcrystalline layer 13 is formed on the other side. Fig.1 b a Continuous narrow line of coating 15 is deposited on one side of the solar cell along its edge. Distance 14 is as small as possible to keep conduction film 17 as large as possible.
Fig.1 c Two conductive films 17 and 19 are deposited on each side of the solar cell. For the solar cell front side (illuminated solar cell side), a transparent conductive oxide is often used as material for the conductive film. About the back side, this film is not necessary transparent. The conductive film 17 and 19 can be respectively the front side transparent conductive Film (FTCF) and the back side conductive film (BCF) or the other way around. Fig.1 d By removing the coating remains an interruption 16 on the conductive film 17 where the coating was. Due to this, most of the conductive film 17 is electrically isolated of the conductive film 19.
Fig.2a is a sectional view of a standard hetero junction solar cell. An amorphous or microcrystalline layer 13 is formed on one side of a silicon substrate 1 1 whereas an amorphous or microcrystalline layer 13 is formed on the other side.
Fig.2b a Continuous narrow line of coating 15 is deposited on both side of the solar cell along its edge. Distance 14 is as small as possible to keep conduction films 17 and 19 as large as possible.
Fig.2c Two conductive films 17 and 19 are deposited on each side of the solar cell. For the solar cell front side (illuminated solar cell side), a transparent conductive oxide is often used as material for the conductive film. About the back side, this film is not necessary transparent. The conductive film 17 and 19 can be respectively the front side transparent conductive film (FTCF) and the back side conductive film (BCF) or the other way around.
Fig.2d By removing the coating remains interruptions 16 on the conductive film 17 and 19 where the coating was. Due to this, most of the conductive film 17 is electrically isolated of the conductive film 19.
Fig.3a is a sectional view of a standard hetero junction solar cell. An amorphous or microcrystalline layer 13 is formed on one side of a silicon substrate 1 1 whereas an amorphous or microcrystalline layer 13 is formed on the other side.
Fig.3b A continuous narrow line of coating 15 is deposited on solar cell edge.
Fig.3c two conductive films 17 and 19 are deposited on each side of the solar cell. For the solar cell front side (illuminated solar cell side), a transparent conductive oxide is often used as material for the conductive film. About the back side, this film is not necessary transparent. The conductive film 17 and 19 can be respectively the front side transparent conductive film (FTCF) and the back side conductive film (BCF) or the other way around.
Fig.3d By removing the coating remains an interruption 16 between the conductive film 17 and 19 where the coating was. Due to this, the conductive film 17 is electrically isolated of the conductive film 19.
Fig.3 is an example of the top view of the final solar cell with edge isolation done by liftoff process. In this example lift-off has been performed on the front side of the hetero junction solar cell. The front transparent conductive film 46 is interrupted on cell edge 47.

Claims

Claims
1 . Method for edge isolation of conductive layers deposited on front and/or back side of a solar cell, the method comprising the steps of:
fabricating a solar cell device up to the step prior to the deposition of front and/or back conductive layers,
depositing/applying a narrow line of coating along cell edge on one side or on both sides or on the edge of the solar cell,
depositing conductive film(s) on front and/or on back side of the solar cell, and
removing the narrow line of coating with wet or dry processing step.
2. Method according to claim 1 , wherein inkjet printing or screen printing is used to apply the coating on the cell edge.
3. Method according to claim 1 or 2 , wherein the coating (15) is applied less than 1 mm from wafer edge on one or both sides all the way to the edge.
PCT/IB2011/054891 2010-11-05 2011-11-03 Edge isolation by lift-off Ceased WO2012059878A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10401183.8 2010-11-05
EP10401183A EP2450970A1 (en) 2010-11-05 2010-11-05 Edge isolation by lift-off

Publications (1)

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TW (1) TW201234621A (en)
WO (1) WO2012059878A1 (en)

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EP2682990A1 (en) 2012-07-02 2014-01-08 Roth & Rau AG Hetero-junction solar cell with edge isolation and method of manufacturing same
WO2014034677A1 (en) * 2012-08-29 2014-03-06 三菱電機株式会社 Photovoltaic element and method for manufacturing same
JP2014232818A (en) * 2013-05-29 2014-12-11 株式会社カネカ Solar battery, manufacturing method for the same, and solar battery module
JP2014232821A (en) * 2013-05-29 2014-12-11 株式会社カネカ Solar cell and manufacturing method therefor, and solar cell module
WO2015068340A1 (en) * 2013-11-08 2015-05-14 パナソニックＩｐマネジメント株式会社 Solar cell
WO2016056546A1 (en) * 2014-10-06 2016-04-14 株式会社カネカ Solar cell, solar cell module, method for manufacturing solar cell, and method for manufacturing solar cell module
CN116766819A (en) * 2023-05-19 2023-09-19 嘉兴敏惠汽车零部件有限公司 Preparation method of vehicle-mounted decoration
CN117423754A (en) * 2023-12-19 2024-01-19 天合光能股份有限公司 Heterojunction cell and manufacturing method, photovoltaic module and photovoltaic system

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TW201526252A (en) * 2013-12-25 2015-07-01 Neo Solar Power Corp Solar cell and method of manufacturing same
US10217887B2 (en) 2014-05-02 2019-02-26 Kaneka Corporation Crystalline silicon-based solar cell, crystalline-silicon solar cell module, and manufacturing methods therefor
CN104576828B (en) * 2014-12-24 2017-08-25 新奥光伏能源有限公司 Method for manufacturing heterojunction solar cell and mold for producing cell
CN105810770B (en) * 2014-12-30 2017-10-03 新日光能源科技股份有限公司 heterojunction solar cell and manufacturing method thereof
FR3038143B1 (en) * 2015-06-26 2017-07-21 Commissariat Energie Atomique METHOD OF ISOLATING THE EDGES OF A HETEROJUNCTION PHOTOVOLTAIC CELL
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WO2015068340A1 (en) * 2013-11-08 2015-05-14 パナソニックＩｐマネジメント株式会社 Solar cell
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US10453981B2 (en) 2014-10-06 2019-10-22 Kaneka Corporation Solar cell, solar cell module, method for manufacturing solar cell, and method for manufacturing solar cell module
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US12575193B2 (en) 2023-12-19 2026-03-10 Trina Solar Co., Ltd. Heterojunction cell and manufacturing method thereof, photovoltaic module and photovoltaic system

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