WO2012071116A1 - Ir photodetectors with high detectivity at low drive voltage - Google Patents

Ir photodetectors with high detectivity at low drive voltage Download PDF

Info

Publication number
WO2012071116A1
WO2012071116A1 PCT/US2011/056180 US2011056180W WO2012071116A1 WO 2012071116 A1 WO2012071116 A1 WO 2012071116A1 US 2011056180 W US2011056180 W US 2011056180W WO 2012071116 A1 WO2012071116 A1 WO 2012071116A1
Authority
WO
WIPO (PCT)
Prior art keywords
photodetector
hbl
bis
ebl
diphenyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/056180
Other languages
French (fr)
Inventor
Franky So
Do Young Kim
Galileo Sarasqueta
Bhabendra K. Pradhan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Florida
University of Florida Research Foundation Inc
Original Assignee
University of Florida
University of Florida Research Foundation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Florida, University of Florida Research Foundation Inc filed Critical University of Florida
Priority to EP11843638.5A priority Critical patent/EP2643857B1/en
Priority to CA2818741A priority patent/CA2818741A1/en
Priority to BR112013012728A priority patent/BR112013012728A2/en
Priority to MX2013005780A priority patent/MX2013005780A/en
Priority to KR1020137015947A priority patent/KR20140018197A/en
Priority to SG2013039664A priority patent/SG190378A1/en
Priority to JP2013539849A priority patent/JP6194249B2/en
Priority to AU2011332300A priority patent/AU2011332300A1/en
Priority to RU2013127809/04A priority patent/RU2013127809A/en
Priority to CN2011800561354A priority patent/CN103238221A/en
Publication of WO2012071116A1 publication Critical patent/WO2012071116A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • Existing night vision goggles are complex electro-optical devices that intensify existing light instead of relying on their own light source.
  • a conventional lens called the objective lens, captures ambient light and some near- infrared light. The gathered light is then sent to an image-intensifier tube.
  • the image-intensifier tube uses a photo cathode to collect photons of light energy for the generation of electrons. As the electrons pass through the tube, more electrons can be released from atoms in the tube, multiplying the original number of electrons by a factor of thousands, often accomplished using a micro channel plate (MCP).
  • MCP micro channel plate
  • the image-intensifier tube can be positioned such that a cascade of electrons hits a screen coated with phosphors at the end of the tube with the electrons retaining the position of the channel through which they passed.
  • the energy of the electrons causes the phosphors to reach an excited state and release photons, which create a green image on the screen and characterize state of the art night vision.
  • the green phosphor image can be viewed through an ocular lens where the image is magnified and focused.
  • NIR near infrared
  • inorganic and hybrid up-conversion devices are expensive to fabricate and the processes used for fabricating these devices are not compatible with large area applications. Efforts are being made to achieve low cost up-conversion devices that have higher conversion efficiencies.
  • Embodiments of the invention are directed to infrared (I R) photodetectors comprising an I R sensitizing layer separating an electron blocking layer (EBL) and a hole blocking layer (HBL). wherein the IR photodetector has high detectivity.
  • the IR photodetectors can be used at voltages below 20V.
  • AlPcCl :C 60 , titanyl phthalocyanine (TiOPc), TiOPc:C 60 PbSe quantum dots (QDs), PbS QDs, PbSe thin films, PbS thin films, InAs, InGaAs, Si, Ge, or GaAs can be used.
  • the EBL can be poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)diphenylamine) (TFB), Poly- N,N -bis-4-butylphenyl-N,N -bis-phenylbenzidine (poly-TPD), or polystyrene-N,N-diphenyl-N,N- bis(4-n-butylphenyl)-(1, 10-biphenyl)-4,4-diamine-perfluorocyclobutane (PS-TPD-PFCB) and the HBL can be 2,9-Dimethyl-4,7-diphenyl- l , 10-phenanthroline (BCP), p- bis(tri pheny 1 si 1 y 1 )benzene (UGH2), 4,7-diphenyl- 1 , 10-phenanthroline (BPhen), tris-(8-hydroxy quinoline) aluminum (Alq 3 ),
  • Figure 1 shows a schematic for an infrared photodetector with high detectivity according to an embodiment of the invention.
  • Figure 2 shows a) a schematic diagram and b) dark J-V characteristics of organic photodetector without and with a hole blocking layer and/or an electron blocking layer, and (c) detectivity of an organic photodetector with both hole and electron blocking layer as a function of wavelength, according to an embodiment of the invention.
  • Figure 3 shows a) the chemical structures of EBL and HBL materials and a TEM image of the IR sensitizing material used to prepare IR photodetectors, according to an embodiment of the invention, b) typical absorption spectra of various sized PbSe QD nanocrystals with an insert of a TEM image of the quantum dots, and e) a schematic of an energetic structure for an IR photodetector with a reduced dark current.
  • J-V current-voltage
  • Embodiments of the invention are directed to an infrared photodetector with high detectivity for use as a sensor and for use in an up-conversion device.
  • detectivity can be expressed as the following equation ( 1 ).
  • the photodetectors comprise a hole blocking layer (HBL) with a deep highest occupied molecule orbital (HOMO) and an electron blocking layer (EBL) with a high lowest unoccupied molecule orbital (LUMO), where the EBL is situated on the anode facing surface and the HBL is situated on the cathode facing surface of an IR photosensitive layer, as shown in Figure 1 .
  • HBL hole blocking layer
  • EBL electron blocking layer
  • LUMO high lowest unoccupied molecule orbital
  • the layers can range from about 20 nm to about 500 nm in thickness, and where the overall spacing between electrodes is less than 5 ⁇ m.
  • the IR photodetector allows high detectivity at applied voltages less than 5V.
  • the IR photosensitive layer can be an organic or organometallic comprising material or an inorganic material.
  • the material absorbs through a large portion of the IR, extending beyond the near IR (700 to 1400 nm), for example, to wavelengths up to 1800 nm or greater.
  • Exemplary organic or organometallic comprising materials include: perylene-3,4,9, 1 0-tetracarboxylic-3.4.9.10- dianhydride (PCTDA); tin (II) phthalocyanine (SnPc); SnPc:C 60 ; aluminum phthalocyanine chloride (AlPcCl); AlPcCI:C 60 ; titanyl phthalocyanine (TiOPc); and TiOPc:C 60 -
  • Inorganic materials for use as photosensitive layers include: PbSe quantum dots (QDs); PbS QDs; PbSe thin films; PbS thin films; InAs; InGaAs; Si; Ge; and GaAs.
  • the HBL can be an organic or organometallic comprising material including, but not limited to: 2,9-Dimethyl-4,7-diphenyl-l ,10- phenanthroline (BCP); p-bis(triphenylsilyl)benzene (UGH2); 4,7-diphenyl- 1 , 10-phenanthroline (BPhen); tris-(8-hydroxy quinoline) aluminum (Alq 3 ); 3,5'-N,N'-dicarbazole-benzene (mCP); C 60 ; and tris[3-(3-pyridyl)-mesityl]borane (3TPYMB).
  • the HBL can be an inorganic material including, but not limited to, thin films or nanoparticles of ZnO or TiO 2
  • the EBL can be an organic material, including, but not limited to: poly(9,9-dioctyl-fluorene-cO-N-(4-butylphenyl)diphenylamine) (TFB); l , l -bis[(di-4- tolylamino)pheny1 ]cyclohexane (TAPC); N,N'-diphenyl-N,N'(2-naphthyl)-(l ,l '-phenyl)-4,4'- diamine (NPB); N,N'-diphenyl-N,N'-di(m-tolyl) benzidine (TPD); po1y-N,N'-bis-4-butylphenyl- N.N '-bis-pheny1ben/idine (poly-TPD); or polystyrene-N.N-diphenyl-N,N-bis(4-n-butylpheny
  • Photodetectors were prepared having no blocking layer, poly-TPD as an EBL, ZnO nanoparticles as a HBL, and with poly-TPD and ZnO nanoparticles as an EBL and a HBL, respectively, as shown in Figure 2a, where the IR photosensitive layer comprised PbSe nanocrystals.
  • the dark current-voltage (J-V) plots for the photodetectors decreased by more than 3 orders of magnitude from that with an EBL and a HBL from the photodetector that is blocking layer free.
  • the photodetector with both blocking layers shows a detectivity of more than 10 11 Jones over TR and visible wavelengths smaller than 950 nm.
  • Inorganic nanoparticle photodetectors were also constructed having no blocking layers and with EBL and HBL layers.
  • the photodetector as schematically illustrated in Figure 3c, comprised various HBLs (BCP, C60, or ZnO), EBLs (TFB or poly-TPD), whose structures are shown in Figure 3a, and where PbSe quantum dots comprised the IR photosensitive layer, which is shown in Figure 3b as a ⁇ image as an insert to the layers' IR absorption spectrum.
  • HBLs BCP, C60, or ZnO
  • EBLs TFB or poly-TPD
  • PbSe quantum dots comprised the IR photosensitive layer, which is shown in Figure 3b as a ⁇ image as an insert to the layers' IR absorption spectrum.
  • the HOMO and LUMO levels of these blocking materials are given in Table 1 , below.
  • Figure 4a is a plot of the dark current, photo current, and detectivity of the PbSe comprising photodetcctor without and with the various blocking layer systems.
  • Figure 4c shows the enhancement in the detectivity as a function of wavelength that results by having an EBL and a HBL. Table 1 Blocking Layer Materials and their HOMO and LUMO Energys

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

An IR photodetector with high detectivity comprises an IR sensitizing layer situated between an electron blocking layer (EBL) and a hole blocking layer (HBL). The EBL and HBL significantly reduce the dark current, resulting in a high detectivity while allowing use of a low applied voltage to the IR photodetector.

Description

DESCRIPTION
1 R PHOTODETECTORS WITH HIGH DETECTIVITY AT LOW DRIVE VOLTAGE
CROSS-REFERENCE TO RELATED APPLICATION
The present application claims the bene lit of U.S. Provisional Application Serial No. 6 1 /41 6,630, filed November 23. 2010, which is hereby incorporated by reference herein in its entirety, including any figures, tables, or drawings.
BACKGROUND OF INVENTION
Existing night vision goggles are complex electro-optical devices that intensify existing light instead of relying on their own light source. In a typical configuration, a conventional lens, called the objective lens, captures ambient light and some near- infrared light. The gathered light is then sent to an image-intensifier tube. The image-intensifier tube uses a photo cathode to collect photons of light energy for the generation of electrons. As the electrons pass through the tube, more electrons can be released from atoms in the tube, multiplying the original number of electrons by a factor of thousands, often accomplished using a micro channel plate (MCP). The image-intensifier tube can be positioned such that a cascade of electrons hits a screen coated with phosphors at the end of the tube with the electrons retaining the position of the channel through which they passed. The energy of the electrons causes the phosphors to reach an excited state and release photons, which create a green image on the screen and characterize state of the art night vision. The green phosphor image can be viewed through an ocular lens where the image is magnified and focused.
Recently, light up-conversion devices have attracted a great deal of research interest because of their potential applications in night vision, range finding, security, and semiconductor wafer inspections. Early near infrared (NIR) up-conversion devices were mostly based on the heterojunction structure of inorganic semiconductors, where a photodetecting and a luminescent section are in series. The up-conversion devices are mainly distinguished by the method of photodetection. Currently inorganic and hybrid up-conversion devices are expensive to fabricate and the processes used for fabricating these devices are not compatible with large area applications. Efforts are being made to achieve low cost up-conversion devices that have higher conversion efficiencies. Unfortunately, none have been identified to allow sufficient detectivity at low drive voltages, generally because of a high dark current density that leads to insufficient contrast in the photodetector. Hence, there remains a need to achieve high contrast in an up- conversion dev ice and an IR photodetector with high detectivity while requiring low drive voltages, for example, about 10V.
BRIEF SUMMARY
Embodiments of the invention are directed to infrared (I R) photodetectors comprising an I R sensitizing layer separating an electron blocking layer (EBL) and a hole blocking layer (HBL). wherein the IR photodetector has high detectivity. The IR photodetectors can be used at voltages below 20V. IR sensitizing layers of perylene-3,4,9, 1 0-tetracarboxylic-3,4,9, 10- dianhydride (PCTDA), tin (II) phthalocyanine (SnPc), SnPc:C60, aluminum phthalocyanine chloride (AlPcCl). AlPcCl :C60, titanyl phthalocyanine (TiOPc), TiOPc:C60 PbSe quantum dots (QDs), PbS QDs, PbSe thin films, PbS thin films, InAs, InGaAs, Si, Ge, or GaAs can be used. The EBL can be poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)diphenylamine) (TFB), Poly- N,N -bis-4-butylphenyl-N,N -bis-phenylbenzidine (poly-TPD), or polystyrene-N,N-diphenyl-N,N- bis(4-n-butylphenyl)-(1, 10-biphenyl)-4,4-diamine-perfluorocyclobutane (PS-TPD-PFCB) and the HBL can be 2,9-Dimethyl-4,7-diphenyl- l , 10-phenanthroline (BCP), p- bis(tri pheny 1 si 1 y 1 )benzene (UGH2), 4,7-diphenyl- 1 , 10-phenanthroline (BPhen), tris-(8-hydroxy quinoline) aluminum (Alq3), 3.5 '-Ν,Ν '-dicarbazole-benzene (mCP), C60, tris[3-(3-pyridyl)- mesityl]borane (3TPYMB), ZnO thin films, ZnO nanoparticles, TiO2 thin films, or TiO2 nanoparticles.
BRIEF DESCRIPTION OF DRAWINGS
Figure 1 shows a schematic for an infrared photodetector with high detectivity according to an embodiment of the invention.
Figure 2 shows a) a schematic diagram and b) dark J-V characteristics of organic photodetector without and with a hole blocking layer and/or an electron blocking layer, and (c) detectivity of an organic photodetector with both hole and electron blocking layer as a function of wavelength, according to an embodiment of the invention.
Figure 3 shows a) the chemical structures of EBL and HBL materials and a TEM image of the IR sensitizing material used to prepare IR photodetectors, according to an embodiment of the invention, b) typical absorption spectra of various sized PbSe QD nanocrystals with an insert of a TEM image of the quantum dots, and e) a schematic of an energetic structure for an IR photodetector with a reduced dark current.
Figure 4 shows a) a plot of the current-voltage (J-V) characteristics of PbSe quantum dot comprising photodetectors without and with an HBL and an HBL. according to an embodiment of the invention, in a dark (Jd) and an illumination (Jph) state upon irradiation at λ= 830nm, b) the dark currents, photo-currents, and calculated detectivity values for various IR photodetectors under a -0.5V bias, and c) detectivity curves across the visible and IR spectrum for photodetectors without and with an HBL and an EBL calculated from spectral response curves biased at -0.5V.
DETAILED DISCLOSURE
Embodiments of the invention are directed to an infrared photodetector with high detectivity for use as a sensor and for use in an up-conversion device. When the dark current is the dominant noise factor, detectivity can be expressed as the following equation ( 1 ).
D* = RI{2qJd)1/2 (1) where R is the responsivity, Jd is the dark current density, and q is the elementary charge (1.6 x 10-19 C). To achieve a photodetector with an optimal detectivity, a very low dark current density is required. The photodetectors, according to embodiments of the invention, comprise a hole blocking layer (HBL) with a deep highest occupied molecule orbital (HOMO) and an electron blocking layer (EBL) with a high lowest unoccupied molecule orbital (LUMO), where the EBL is situated on the anode facing surface and the HBL is situated on the cathode facing surface of an IR photosensitive layer, as shown in Figure 1 . The layers can range from about 20 nm to about 500 nm in thickness, and where the overall spacing between electrodes is less than 5 μm. The IR photodetector, according to embodiments of the invention, allows high detectivity at applied voltages less than 5V.
In embodiments of the invention, the IR photosensitive layer can be an organic or organometallic comprising material or an inorganic material. In some embodiments of the invention, the material absorbs through a large portion of the IR, extending beyond the near IR (700 to 1400 nm), for example, to wavelengths up to 1800 nm or greater. Exemplary organic or organometallic comprising materials include: perylene-3,4,9, 1 0-tetracarboxylic-3.4.9.10- dianhydride (PCTDA); tin (II) phthalocyanine (SnPc); SnPc:C60; aluminum phthalocyanine chloride (AlPcCl); AlPcCI:C60; titanyl phthalocyanine (TiOPc); and TiOPc:C60- Inorganic materials for use as photosensitive layers include: PbSe quantum dots (QDs); PbS QDs; PbSe thin films; PbS thin films; InAs; InGaAs; Si; Ge; and GaAs.
in embodiments of the invention, the HBL can be an organic or organometallic comprising material including, but not limited to: 2,9-Dimethyl-4,7-diphenyl-l ,10- phenanthroline (BCP); p-bis(triphenylsilyl)benzene (UGH2); 4,7-diphenyl- 1 , 10-phenanthroline (BPhen); tris-(8-hydroxy quinoline) aluminum (Alq3); 3,5'-N,N'-dicarbazole-benzene (mCP); C60; and tris[3-(3-pyridyl)-mesityl]borane (3TPYMB). In other embodiments of the invention, the HBL can be an inorganic material including, but not limited to, thin films or nanoparticles of ZnO or TiO2
In embodiments of the invention, the EBL can be an organic material, including, but not limited to: poly(9,9-dioctyl-fluorene-cO-N-(4-butylphenyl)diphenylamine) (TFB); l , l -bis[(di-4- tolylamino)pheny1 ]cyclohexane (TAPC); N,N'-diphenyl-N,N'(2-naphthyl)-(l ,l '-phenyl)-4,4'- diamine (NPB); N,N'-diphenyl-N,N'-di(m-tolyl) benzidine (TPD); po1y-N,N'-bis-4-butylphenyl- N.N '-bis-pheny1ben/idine (poly-TPD); or polystyrene-N.N-diphenyl-N,N-bis(4-n-butylphenyl)- (l , 10-biphenyl)-4,4-diamine-perfluorocyclobutane (PS-TPD-PFCB).
METHODS AND MATERIALS
Photodetectors were prepared having no blocking layer, poly-TPD as an EBL, ZnO nanoparticles as a HBL, and with poly-TPD and ZnO nanoparticles as an EBL and a HBL, respectively, as shown in Figure 2a, where the IR photosensitive layer comprised PbSe nanocrystals. As can be seen in Figure 2b, the dark current-voltage (J-V) plots for the photodetectors decreased by more than 3 orders of magnitude from that with an EBL and a HBL from the photodetector that is blocking layer free. The photodetector with both blocking layers shows a detectivity of more than 1011 Jones over TR and visible wavelengths smaller than 950 nm.
Inorganic nanoparticle photodetectors were also constructed having no blocking layers and with EBL and HBL layers. The photodetector, as schematically illustrated in Figure 3c, comprised various HBLs (BCP, C60, or ZnO), EBLs (TFB or poly-TPD), whose structures are shown in Figure 3a, and where PbSe quantum dots comprised the IR photosensitive layer, which is shown in Figure 3b as a ΊΈΜ image as an insert to the layers' IR absorption spectrum. The HOMO and LUMO levels of these blocking materials are given in Table 1 , below. Although the magnitude of reduction differs, placement of an EBL and a HBL on the PbSe comprising photodetector results in a significant reduction of the dark current at low applied voltages, as shown in Figure 4a. Figure 4b is a plot of the dark current, photo current, and detectivity of the PbSe comprising photodetcctor without and with the various blocking layer systems. Figure 4c shows the enhancement in the detectivity as a function of wavelength that results by having an EBL and a HBL. Table 1 Blocking Layer Materials and their HOMO and LUMO Energies
Figure imgf000007_0001
It should be understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application.

Claims

CLAIMS We claim:
1 . An IR photodetector, comprising an IR sensitizing layer separating an electron blocking layer (EBL) and a hole blocking layer (HBL), wherein the IR photodetector has high detectivity.
2. The IR photodetector of claim 1 , wherein the IR sensitizing layer comprises perylene-3,4,9, 10- tetracarboxyIic-3,4, 9, 10-dianhydride (PCTDA), tin (II) phthalocyanine (SnPc), SnPc:C60, aluminum phthalocyanine chloride (AlPcCl), AlPcClC60, titanyl phthalocyanine (TiOPc), or TiOPc:C60.
3. The IR photodetector of claim 1 , wherein the IR sensitizing layer comprises PbSe quantum dots (QDs), PbS QDs, PbSe. PbS, InAs, InGaAs, Si, Ge, or GaAs.
4. The IR photodetector of claim 1 , wherein the EBL comprises poly(9,9-dioctyl-fluorene-co-N- (4-butylpheny])diphenylamine) (TFB), po1y-N,N-bis-4-butylphenyl-N,N-bis-phenylbenzidine (poly-TPD), or polystyrene-N,N-diphenyl-N,N-bis(4-n-butylphenyl)-(l, 10-biphenyI)-4,4- diamine-perfluorocyclobutane (PS-TPD-PFCB).
5. The IR photodetector of claim 1 , wherein the HBL comprises 2,9-Dimethyl-4,7-diphenyl- 1 , 10-phenanthroline (BCP), p-bis(triphenylsilyl)benzene (UGH2), 4,7-diphenyl-l ,10- phenanthroline (BPhen), tris-(8-hydroxy quinoline) aluminum (Aiq3), 3,5 '-N,N'-dicarbazole- benzene (mCP), C60, or tris[3-(3-pyridyl)-mesityl]borane (3TPYMB).
6. The IR photodetector of claim 1 , wherein the HBL comprises continuous or nano particulate films of ZnO or TiO2.
PCT/US2011/056180 2010-11-23 2011-10-13 Ir photodetectors with high detectivity at low drive voltage Ceased WO2012071116A1 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
EP11843638.5A EP2643857B1 (en) 2010-11-23 2011-10-13 Ir photodetectors with high detectivity at low drive voltage
CA2818741A CA2818741A1 (en) 2010-11-23 2011-10-13 Ir photodetectors with high detectivity at low drive voltage
BR112013012728A BR112013012728A2 (en) 2010-11-23 2011-10-13 "High detectivity infrared photodetectors on low voltage device."
MX2013005780A MX2013005780A (en) 2010-11-23 2011-10-13 INFRARED PHOTODETECTORS WITH HIGH CAPACITY OF DETECTION IN LOW DRIVE VOLTAGE.
KR1020137015947A KR20140018197A (en) 2010-11-23 2011-10-13 Ir photodetectors with high detectivity at low drive voltage
SG2013039664A SG190378A1 (en) 2010-11-23 2011-10-13 Ir photodetectors with high detectivity at low drive voltage
JP2013539849A JP6194249B2 (en) 2010-11-23 2011-10-13 IR photodetector with high detection capability at low drive voltage
AU2011332300A AU2011332300A1 (en) 2010-11-23 2011-10-13 IR photodetectors with high detectivity at low drive voltage
RU2013127809/04A RU2013127809A (en) 2010-11-23 2011-10-13 IR PHOTODETECTORS WITH HIGH ABILITY TO DETECT AT LOW VOLTAGE EXCITATION
CN2011800561354A CN103238221A (en) 2010-11-23 2011-10-13 IR photodetectors with high detectivity at low drive voltage

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41663010P 2010-11-23 2010-11-23
US61/416,630 2010-11-23

Publications (1)

Publication Number Publication Date
WO2012071116A1 true WO2012071116A1 (en) 2012-05-31

Family

ID=46063480

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/056180 Ceased WO2012071116A1 (en) 2010-11-23 2011-10-13 Ir photodetectors with high detectivity at low drive voltage

Country Status (12)

Country Link
US (1) US20120126204A1 (en)
EP (1) EP2643857B1 (en)
JP (1) JP6194249B2 (en)
KR (1) KR20140018197A (en)
CN (1) CN103238221A (en)
AU (1) AU2011332300A1 (en)
BR (1) BR112013012728A2 (en)
CA (1) CA2818741A1 (en)
MX (1) MX2013005780A (en)
RU (1) RU2013127809A (en)
SG (1) SG190378A1 (en)
WO (1) WO2012071116A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014514730A (en) * 2011-02-28 2014-06-19 ユニバーシティ オブ フロリダ リサーチ ファウンデーション，インク． Photodetector with gain and up-conversion device (EC)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101513406B1 (en) 2006-09-29 2015-04-17 유니버시티 오브 플로리다 리서치 파운데이션, 인크. Method and apparatus for infrared detection and display
AU2011258475A1 (en) 2010-05-24 2012-11-15 Nanoholdings, Llc Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
CN103733355B (en) 2011-06-30 2017-02-08 佛罗里达大学研究基金会有限公司 A method and apparatus for detecting infrared radiation with gain
JP2015195333A (en) * 2014-03-19 2015-11-05 株式会社東芝 Organic photoelectric conversion element and imaging device
CA2988784A1 (en) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Monodisperse, ir-absorbing nanoparticles and related methods and devices
KR102491494B1 (en) 2015-09-25 2023-01-20 삼성전자주식회사 Compound for organic photoelectric device and organic photoelectric device and image sensor including the same
KR102529631B1 (en) 2015-11-30 2023-05-04 삼성전자주식회사 Organic photoelectronic device and image sensor
KR102557864B1 (en) 2016-04-06 2023-07-19 삼성전자주식회사 Compound and organic photoelectric device, image sensor and electronic device including the same
US10236461B2 (en) 2016-05-20 2019-03-19 Samsung Electronics Co., Ltd. Organic photoelectronic device and image sensor
KR102605375B1 (en) 2016-06-29 2023-11-22 삼성전자주식회사 Organic photoelectronic device and image sensor
KR102589215B1 (en) 2016-08-29 2023-10-12 삼성전자주식회사 Organic photoelectronic device and image sensor and electronic device
TWI782937B (en) * 2017-04-10 2022-11-11 日商松下知識產權經營股份有限公司 camera device
WO2018188448A1 (en) * 2017-04-11 2018-10-18 Tcl集团股份有限公司 Crosslinked nanoparticle thin film and preparation method therefor, and thin film optoelectronic device
US11145822B2 (en) 2017-10-20 2021-10-12 Samsung Electronics Co., Ltd. Compound and photoelectric device, image sensor, and electronic device including the same
CN109360838B (en) * 2018-09-26 2022-04-26 京东方科技集团股份有限公司 Sensing and controlling display panel and sensing and controlling display device
US20210013437A1 (en) * 2018-09-29 2021-01-14 Tcl Technology Group Corporation Quantum dot light-emitting diode
JP2021015963A (en) 2019-07-09 2021-02-12 日本化薬株式会社 Photoelectric conversion element material and uses thereof
CN110364627A (en) * 2019-07-16 2019-10-22 南方科技大学 quantum dot photoelectric detector and preparation method
CN113013282B (en) * 2019-12-20 2023-03-21 中国电子科技集团公司第四十八研究所 High-response PbSe/C60 heterojunction photosensitive thin film infrared detection chip, preparation method thereof and infrared detector
CN115411189A (en) * 2022-08-18 2022-11-29 华中科技大学 Quantum dot infrared detector and preparation method thereof
CN115589737B (en) * 2022-09-23 2025-11-07 广州光达创新科技有限公司 Quantum dot light detection device, array and preparation method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060024526A1 (en) * 2002-03-29 2006-02-02 Thompson Mark E Organic light emitting devices with electron blocking layers
WO2006130717A2 (en) 2005-06-02 2006-12-07 The Regents Of The University Of California Effective organic solar cells based on triplet materials
US20070176541A1 (en) * 2006-01-27 2007-08-02 Son Jhun-Mo Organic light emitting compound and organic light emitting device comprising the same
US20080223445A1 (en) 2007-03-12 2008-09-18 Northwestern University Electron-blocking layer / hole-transport layer for organic photovoltaics and applications of same
US20090206745A1 (en) * 2008-02-18 2009-08-20 Seok-Hwan Hwang Silanylamine-based compound and organic light emitting diode
US20090286338A1 (en) * 2006-06-24 2009-11-19 Seth Coe-Sullivan Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions
US20100141122A1 (en) * 2008-12-09 2010-06-10 Begley William J Oled device with cyclobutene electron injection materials
WO2010120393A2 (en) 2009-01-12 2010-10-21 The Regents Of The University Of Michigan Enhancement of organic photovoltaic cell open circuit voltage using electron/hole blocking exciton blocking layers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6863997B2 (en) * 2001-12-28 2005-03-08 The Trustees Of Princeton University White light emitting OLEDs from combined monomer and aggregate emission
US7125635B2 (en) * 2003-12-23 2006-10-24 Xerox Corporation Imaging members
US7773404B2 (en) * 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
CN101405888B (en) * 2006-02-17 2011-09-28 索莱赞特公司 Nanostructured electroluminescent device and display
TWI312531B (en) * 2006-06-30 2009-07-21 Nat Taiwan Universit Photoelectric device and fabrication method thereof
KR101513406B1 (en) * 2006-09-29 2015-04-17 유니버시티 오브 플로리다 리서치 파운데이션, 인크. Method and apparatus for infrared detection and display
WO2009002551A1 (en) * 2007-06-26 2008-12-31 Qd Vision, Inc. Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
CN102047098B (en) * 2008-04-03 2016-05-04 Qd视光有限公司 Light emitting device including quantum dots
JP2009272528A (en) * 2008-05-09 2009-11-19 Fujifilm Corp Photoelectric conversion element, method of manufacturing photoelectric conversion element, and solid-state image sensor
WO2009152275A1 (en) * 2008-06-11 2009-12-17 Plextronics, Inc. Encapsulation for organic optoelectronic devices
GB2470006B (en) * 2009-05-05 2012-05-23 Cambridge Display Tech Ltd Device and method of forming a device
DK2483925T3 (en) * 2009-09-29 2018-08-20 Res Triangle Inst QUANTITY POINT FILLER TRANSITION BASED PHOTO DETECTORS

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060024526A1 (en) * 2002-03-29 2006-02-02 Thompson Mark E Organic light emitting devices with electron blocking layers
WO2006130717A2 (en) 2005-06-02 2006-12-07 The Regents Of The University Of California Effective organic solar cells based on triplet materials
US20070176541A1 (en) * 2006-01-27 2007-08-02 Son Jhun-Mo Organic light emitting compound and organic light emitting device comprising the same
US20090286338A1 (en) * 2006-06-24 2009-11-19 Seth Coe-Sullivan Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions
US20080223445A1 (en) 2007-03-12 2008-09-18 Northwestern University Electron-blocking layer / hole-transport layer for organic photovoltaics and applications of same
US20090206745A1 (en) * 2008-02-18 2009-08-20 Seok-Hwan Hwang Silanylamine-based compound and organic light emitting diode
US20100141122A1 (en) * 2008-12-09 2010-06-10 Begley William J Oled device with cyclobutene electron injection materials
WO2010120393A2 (en) 2009-01-12 2010-10-21 The Regents Of The University Of Michigan Enhancement of organic photovoltaic cell open circuit voltage using electron/hole blocking exciton blocking layers

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IM S H ET AL.: "ORGANIC ELECTRONICS", vol. 11, 1 April 2010, ELSEVIER, article "Near-infrared photodetection based on PbS colloidal quantum dots/organic hole conductor", pages: 696 - 699
See also references of EP2643857A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014514730A (en) * 2011-02-28 2014-06-19 ユニバーシティ オブ フロリダ リサーチ ファウンデーション，インク． Photodetector with gain and up-conversion device (EC)

Also Published As

Publication number Publication date
CA2818741A1 (en) 2012-05-31
BR112013012728A2 (en) 2016-09-13
RU2013127809A (en) 2014-12-27
CN103238221A (en) 2013-08-07
AU2011332300A8 (en) 2013-06-13
EP2643857A1 (en) 2013-10-02
EP2643857B1 (en) 2019-03-06
JP2013544440A (en) 2013-12-12
EP2643857A4 (en) 2014-12-03
SG190378A1 (en) 2013-06-28
AU2011332300A1 (en) 2013-06-06
KR20140018197A (en) 2014-02-12
US20120126204A1 (en) 2012-05-24
JP6194249B2 (en) 2017-09-06
MX2013005780A (en) 2013-06-28

Similar Documents

Publication Publication Date Title
US20120126204A1 (en) Ir photodetectors with high detectivity at low drive voltage
JP6219172B2 (en) Photodetector with gain and up-conversion device (EC)
EP2718974B1 (en) Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
EP2577747B1 (en) Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
CN103493199B (en) For the method and apparatus that infrared (IR) photovoltaic cell is integrated on film photovoltaic cell
CA2828305A1 (en) Up-conversion devices with a broad band absorber
AU2011360920A1 (en) Up-conversion devices with a broad band absorber

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11843638

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2013539849

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2818741

Country of ref document: CA

WWE Wipo information: entry into national phase

Ref document number: MX/A/2013/005780

Country of ref document: MX

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2011843638

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2011332300

Country of ref document: AU

Date of ref document: 20111013

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20137015947

Country of ref document: KR

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2013127809

Country of ref document: RU

Kind code of ref document: A

REG Reference to national code

Ref country code: BR

Ref legal event code: B01A

Ref document number: 112013012728

Country of ref document: BR

ENP Entry into the national phase

Ref document number: 112013012728

Country of ref document: BR

Kind code of ref document: A2

Effective date: 20130522