WO2012089043A1 - 一种背面对准装置及方法 - Google Patents

一种背面对准装置及方法 Download PDF

Info

Publication number
WO2012089043A1
WO2012089043A1 PCT/CN2011/084264 CN2011084264W WO2012089043A1 WO 2012089043 A1 WO2012089043 A1 WO 2012089043A1 CN 2011084264 W CN2011084264 W CN 2011084264W WO 2012089043 A1 WO2012089043 A1 WO 2012089043A1
Authority
WO
WIPO (PCT)
Prior art keywords
alignment mark
imaging
alignment
reference plate
illumination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2011/084264
Other languages
English (en)
French (fr)
Inventor
徐兵
陈跃飞
贾翔
杨晓青
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Micro Electronics Equipment Co Ltd
Original Assignee
Shanghai Micro Electronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to EP11852338.0A priority Critical patent/EP2660656B1/en
Priority to US13/976,376 priority patent/US9188434B2/en
Publication of WO2012089043A1 publication Critical patent/WO2012089043A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Definitions

  • the present invention relates to the field of manufacturing of integrated circuit manufacturing equipment, and more particularly to an apparatus and method for achieving back alignment in a semiconductor lithography apparatus. Background technique
  • a multi-wafer package is a silicon-scale package method in which two or more planar devices are stacked and connected, which is also referred to as a three-dimensional (3D) package.
  • the TSV packaging process is considered to be One of the most promising and promising 3D packaging methods in the future.
  • the TSV packaging process is to form micro vias on the front side to the back side of the semiconductor wafer, and then electrically connect the upper and lower silicon wafers.
  • the 3D vertical interconnection method By using the 3D vertical interconnection method, the length of the interconnection leads between the silicon wafers is greatly shortened.
  • the packaged device has been greatly improved in terms of volume, performance and signal access transmission speed.
  • the TSV package process requires exposure on the backside of the silicon wafer, thus requiring semiconductor lithography equipment to have a backside alignment device to meet the process requirements for wafer backside exposure.
  • the backside alignment device has an existing pattern on the front surface of the silicon wafer (or referred to as the front surface of the silicon wafer) as an alignment mark on the back side of the silicon wafer (or referred to as the back side of the silicon wafer). In order to determine the positional error between the exposed pattern on the back side of the wafer and the existing pattern on the front surface of the wafer. The measurement accuracy of the backside alignment device will directly determine the overlay error between the front and back surface lithographic patterns of the silicon wafer.
  • the visible light measurement method mainly installs an optical path turning and imaging device on the bottom sides of the silicon wafer stage, and uses visible light to realize illumination and imaging of the back surface of the silicon wafer.
  • Infrared measurement is the use of infrared light to penetrate the silicon to achieve illumination and imaging of the backside markings.
  • a typical backside alignment device is disclosed in U.S. Patent Nos. 6,525, 805 B and 6,768, 539 B, which utilize the visible light measurement method to achieve backside alignment of the silicon wafer by off-axis alignment means, but the back alignment mark illumination device of the device is more, one
  • the back alignment mark corresponds to a set of back alignment mark illumination devices, resulting in complicated assembly and high cost of the back alignment mark illumination device; since the back alignment mark illumination device is located under the wafer carrier, the wafer carrier structure design The complexity and processing cost are high; at the same time, since the position of the back alignment mark in the device is required to be located in the illumination field of view of the back alignment mark illumination device, the process adaptability is poor.
  • U.S. Patent No. 6,525,805 B discloses a silicon wafer backside alignment device using infrared measurement method, which uses a near-infrared light measurement method to mount a near-infrared light source at different positions in the wafer carrier to realize illumination of the back surface of the silicon wafer. Imaging of the backside markings of the wafer is then achieved by a near infrared imaging device above the silicon wafer.
  • the back surface marking illumination device of the silicon wafer is installed in the silicon wafer bearing table, so the structure design and assembly of the workpiece table are complicated, and the processing cost is high, and the alignment accuracy of the silicon wafer and the space size of the silicon wafer carrier are adopted.
  • the present invention provides an apparatus and method for realizing back alignment, which is structurally clean and can reduce the design difficulty and the difficulty of labor of integrated circuit manufacturing equipment as a whole.
  • the present invention discloses a back surface alignment device for determining a relative positional relationship between a substrate and a workpiece stage, comprising: a radiation source for emitting infrared rays; a workpiece stage device for supporting the substrate and moving the substrate An imaging device for detecting an alignment mark and calculating an alignment mark position; a reference plate device for establishing a position coordinate relationship between the imaging device and the workpiece table device; the radiation source and the imaging device capable of realizing a different pair of devices Illumination and alignment of the alignment mark; the alignment mark includes a reference plate alignment mark and a back surface alignment mark.
  • the workpiece stage device includes at least three light passing holes for passing infrared rays.
  • the back alignment device further includes a lighting device.
  • the illuminating device is located directly above the light-passing hole of the workpiece table device, and includes an optical fiber and a lighting mirror group; or directly under the light-passing hole of the workpiece table device, including an optical fiber and a lighting mirror group And lighting mirrors.
  • the workpiece stage apparatus includes a workpiece stage and a base below the workpiece stage, the workpiece stage achieving at least 3 degrees of freedom of movement.
  • the workpiece stage apparatus further includes a suction cup located above the workpiece stage, the suction cup being constructed of glass or a material having a high transmittance for infrared light.
  • the three light passing holes include a base light passing hole and two workpiece stage light passing holes.
  • the imaging device is located directly above the light-passing hole of the workpiece table device, and includes an imaging lens group, an imaging detector, and an image processing system, or directly under the light-passing hole of the workpiece table device, Includes imaging optics, illumination mirrors, imaging detectors, and image processing systems.
  • the imaging detector is a CCD detector, a CMOS detector or an InGaAs detector.
  • the reference plate device includes a reference plate, a reference plate alignment mark, and a reference plate holder.
  • the reference plate alignment mark is located on a lower surface of the reference plate, the reference plate is fixed on the reference plate holder, and the reference plate alignment mark and the back surface alignment mark are located on the same horizontal surface.
  • Place The reference plate holder is made of glass or a material having a high transmittance for infrared light.
  • the reference plate device is located above the workpiece table or the suction cup.
  • the position, number and size of the light passing holes of the workpiece stage are determined by the alignment accuracy and the size of a single chip.
  • the invention also discloses a back alignment method for determining the relative positional relationship between the substrate and the workpiece table, including:
  • Step 1 moving the reference plate alignment mark to the imaging field of view of the imaging device, establishing a position coordinate relationship between the imaging device and the workpiece table;
  • Step two moving the back alignment mark to the imaging field of view of the imaging device, establishing a position coordinate relationship between the back alignment mark and the imaging device;
  • Step 3 Obtain a positional relationship between the substrate and the workpiece stage according to the above two position coordinate relationships.
  • step one includes:
  • the imaging device comprises an imaging detector and an image processing system, and the image processing system is used to determine whether there is a reference alignment mark in the imaging detector; if the reference alignment mark is located in the imaging detector, the image processing system is used to calculate The reference plate aligns the position of the mark on the target surface of the imaging detector while recording the horizontal position of the workpiece stage;
  • the workpiece table is stepped to the next search position according to the set displacement amount. If the search exceeds the set search range, the search is terminated; if the reference is found within the search range For the alignment mark, repeat step 1.2.
  • Step two includes:
  • the imaging device includes an imaging detector and an image processing system, using an image processing system Determining whether there is a back alignment mark in the imaging detector; if the back alignment mark is located in the imaging detector, using an image processing system to calculate the position of the back alignment mark on the target surface of the infrared detector, and recording the horizontal direction of the workpiece stage position;
  • the workpiece table is stepped to the next search position according to the set displacement amount. If the search exceeds the set search range, the search is terminated; if the reference version is found within the search range Align the mark, repeat step 2.2;
  • Step three includes:
  • the difference between the technical solution adopted by the present invention and the prior art is that: since the lighting device is only designed as one set, the design and assembly complexity of the lighting device are reduced, and the lighting device and the workpiece are reduced at the same time.
  • the mutual coupling between the mechanical interfaces of the table device reduces the complexity of the design and assembly of the workpiece table structure, and at the same time reduces the processing cost of the wafer carrier.
  • the back alignment mark of the silicon wafer is not within the field of view of the imaging device, the back alignment mark can be searched within a certain range by moving the workpiece stage, thereby improving the alignment of the back side of the silicon wafer with the alignment mark on the back side of the silicon wafer. Process adaptability. DRAWINGS
  • FIG. 1 is a schematic structural view of a back surface alignment device according to the present invention
  • 2 is a detailed structural view of a first embodiment of a back surface alignment device according to the present invention
  • FIG. 3 is a schematic view showing a layout of a lighting device of a back surface alignment device according to the present invention
  • FIG. 4 is a detailed structural view of a second embodiment of the back surface alignment device according to the present invention
  • FIG. 5 is a detailed structural view of a third embodiment of the back surface alignment device according to the present invention
  • the present invention provides a backside alignment apparatus and method suitable for use in integrated circuit manufacturing equipment.
  • a schematic structural view of the back alignment device is shown in FIG. 5 is a projection objective lens in an integrated circuit manufacturing equipment.
  • the projection objective lens 5 may be a refractive projection objective lens, a reflective projection objective lens, or a catadioptric projection objective lens, depending on the device to be manufactured.
  • 1 is an illumination device for a back surface alignment device according to the present invention, which is for providing infrared illumination.
  • 6 is a substrate, which may be a silicon wafer, a glass substrate or other material substrate depending on the equipment to be manufactured. The substrate 6 is placed on the workpiece stage unit 2, and the workpiece stage unit 2 is movable in at least 3 degrees of freedom.
  • the infrared ray emitted from the illuminating device 1 passes through the workpiece stage device 2, and is then irradiated onto the image forming device 3 through the back surface alignment mark 20 on the substrate 6.
  • the reference plate (also used as the reference plate) device 4 is used to establish the relationship between the imaging device 3 and the workpiece table device 2 coordinate system.
  • Fig. 2 is a first embodiment of a back surface alignment device according to the present invention.
  • the back surface alignment device includes an illumination device 1, a workpiece table device 2, an imaging device 3, and a reference plate device 4 for determining the substrate 6 and the workpiece table according to the back alignment mark 20 on the substrate 6. The positional relationship of the device 2.
  • the illumination device 1 is sequentially composed of an infrared light source 10, an infrared illumination fiber 11, an illumination mirror group 13, an illumination mirror 14, and the like, thereby achieving uniform illumination of the reference plate alignment mark 41 and the substrate back alignment mark 20.
  • the lighting device 1 is structured in the manner of a Kohler lighting system. Kohler Lighting The design of the system can be seen in the prior art.
  • the workpiece stage unit 2 includes at least one multi-degree-of-freedom workpiece stage 24 and a marble base 26.
  • the multi-degree-of-freedom workpiece table 24 can achieve at least three degrees of freedom of motion, preferably a six-degree-of-freedom workpiece stage.
  • the six-degree-of-freedom workpiece stage 24 is mainly used to support the substrate 6 and simultaneously adjust the position of the substrate 6 in six degrees of freedom.
  • the six degree of freedom workpiece table 24 is located above the marble base 26.
  • the substrate 6 is illustratively selected in the present embodiment as a silicon wafer with a backside alignment mark 20 on the substrate 6.
  • the substrate 6 is usually placed on the six-degree-of-freedom workpiece stage 24 through a suction cup 22.
  • the suction cup 22 is located on the same side as the back alignment mark 20 and is mounted on the upper surface of the six-degree-of-freedom work table 24.
  • the chuck 22 is made of glass or a material having a high transmittance for infrared light.
  • the table through hole 23 is located directly below the reference plate device 4, and the other one or more is located directly below the back plate alignment mark 20, so that the infrared light emitted by the illumination device 1 can pass through the workpiece table through hole 23 and the suction cup. 22 pairs of back alignment marks 20 and reference alignment marks 41 are uniformly illuminated. Among them, one back alignment mark 20 corresponds to one light passing hole 23.
  • the position, number, and size of the workpiece stage apertures 23 are primarily dependent on alignment accuracy and individual chip size.
  • the marble base 26 has a marble clearing aperture 25, i.e., a pedestal aperture, for the infrared light emitted by the illumination device 1 to pass through the marble base 26.
  • the position of the marble light-passing hole 25 is located directly above the illuminating device 1, and is also located directly below the image forming device 3.
  • the size of the marble clear aperture 25 depends on the illumination field of view of the illumination device 1 and the search range of the back alignment mark 20.
  • the reference plate device 4 is composed of a reference plate 40, a reference plate alignment mark 41, and a reference plate holder 42 for establishing a relationship between the image forming device and the workpiece table coordinate system.
  • the reference plate alignment mark 41 is located on the lower surface of the reference plate 40 and is on the same level as the wafer back alignment mark 20.
  • the reference plate 40 is fixed to the reference plate holder 42.
  • the reference plate holder 42 is made of glass or a material having a high transmittance for infrared light, so that infrared light emitted by the illumination device 1 can be projected through the reference plate holder 42 Illumination of the reference plate alignment mark 41.
  • the reference plate unit 4 is fixed to the six-degree-of-freedom workpiece stage 24 or directly placed on the suction cup 22, and its position in the six degrees of freedom can be adjusted with the movement of the six-degree-of-freedom workpiece stage 24.
  • the illuminating device 1 is positioned below the workpiece table unit 2 on the back side and its position is not affected by the movement of the six degree of freedom workpiece table 24.
  • the image forming apparatus 3 is positioned above the workpiece stage unit 2, and its position is not affected by the movement of the six-degree-of-freedom workpiece stage 24.
  • the imaging device 3 includes an infrared imaging lens group 31, an infrared imaging detector 32, and an image processing system 33 for realizing clear imaging of the back alignment mark 20 and the reference alignment mark 41 on the target surface of the infrared imaging detector 32, and simultaneously The above alignment mark position is calculated.
  • the infrared imaging detector 32 is configured to receive an image formed by the infrared imaging mirror group 31 by the reference alignment mark 41 and the back alignment mark 20, and the infrared imaging detector 32 may be a CCD (Charge Coupled Device) camera or A CMOS (Complementary Metal-Oxide-Semiconductor Transistor) semiconductor device can also be an InGaAs (Indium Gallium Arsenide) detector.
  • CCD Charge Coupled Device
  • CMOS Complementary Metal-Oxide-Semiconductor Transistor
  • Infrared light is emitted from the infrared source 10, through the infrared illumination fiber 11, the illumination lens set 13, the illumination mirror 14, the marble aperture 25, the workpiece stage aperture 23, the suction cup 22 to the reference alignment mark 41 or the back alignment
  • the mark 20 achieves uniform illumination of the reference plate alignment mark 41 and the back surface alignment mark 20.
  • the back-alignment imaging process can be implemented from the reference plate alignment mark 41 or the back surface alignment mark 20, via the reference plate 40 or the substrate 6, the infrared imaging lens group 31, and the infrared imaging detector 32 to the image processing system 33.
  • the quasi-marker 41 and/or the backside alignment mark 20 are clearly imaged on the infrared imaging detector 32 while the reference plate alignment mark 41 and/or the back side alignment mark 20 are given by the image processing system 33 at the infrared imaging detector 32 target Location information on the surface.
  • FIG. 3 is a schematic view showing the layout of a lighting device of the back surface alignment device according to the present invention.
  • the reference plate device 4 is located at the upper left corner of the six degree of freedom workpiece table 24, and the actual layout may also be located at any corner of the six degree of freedom workpiece table 24.
  • the reference plate device 4 can also be mounted directly to the suction cup 22.
  • the reference plate alignment mark 41 and the back surface alignment mark 20 are schematically shown in the drawing Shown as a cross mark, but those skilled in the art will appreciate that the reference plate alignment mark 41 and the back side alignment mark 20 may be selected with different alignment marks depending on the alignment accuracy and requirements during actual application.
  • three back alignment marks 20 and corresponding three workpiece stage light passing holes 23 are employed.
  • the workpiece stage light passing hole 23 is larger than the illumination field of view of the reference mark 41 and the back side alignment mark 20 and the search range.
  • Fig. 4 is a detailed structural view showing a second embodiment of the back surface alignment device according to the present invention.
  • the illumination device 1 is not used, and the infrared light source 25 is directly mounted in the workpiece stage marble to achieve uniform illumination of the reference mark 41 and the back alignment mark 20. Since a plurality of optical elements are omitted, the structure is simpler and lower in cost than the first embodiment.
  • Fig. 5 is a detailed structural view showing a third embodiment of the back surface alignment device according to the present invention.
  • the back surface alignment device includes a lighting device 1, a workpiece table device 2, an image forming device 3, and a reference plate device 4 for aligning the markings 20 according to the back surface on the substrate 6.
  • the positional relationship between the substrate 6 and the workpiece stage device 2 is determined.
  • the illuminating device 1 is placed above the substrate 6, and the imaging device 3 is placed under the substrate 6.
  • the illumination device 1 is sequentially composed of an infrared light source 10, an infrared illumination fiber 11, an illumination mirror group 13, and the like, and achieves uniform illumination of the reference plate alignment mark 41 and the substrate back surface alignment mark 20;
  • the image forming apparatus 3 is composed of a back surface alignment mark 20, a workpiece stage light passing hole 23, a marble light passing hole 25, an infrared imaging mirror group 31, an infrared mirror 34, an infrared imaging detector 32, and an image processing system 33.
  • the back alignment mark 20 and the reference alignment mark 41 are clearly imaged on the target surface of the infrared imaging detector 32, and the position of the alignment mark described above is calculated.
  • the present invention also discloses a back alignment method including: moving the reference alignment mark 41 to the imaging field of view of the imaging device 3, and establishing the imaging device 3 and the workpiece table device 2 Position coordinate relationship; moving the back alignment mark 20 to the imaging field of view of the imaging device 3, establishing a position coordinate relationship between the back alignment mark 20 and the imaging device 3; obtaining the substrate 6 and the workpiece table according to the above two position coordinate relationships The positional relationship between the devices 2.
  • Step 1 moving the six-degree-of-freedom workpiece table 24 to the desired position so that the reference plate alignment mark 41 is within the imaging field of view of the imaging device 3;
  • Step 2 Using the image processing system 33 to determine whether there is a reference alignment mark 41 in the infrared imaging detector 32; if the reference alignment mark 41 is located in the infrared imaging detector 32, the reference alignment is calculated by the image processing system 33. The position of the mark 41 on the target face 32 of the infrared imaging detector while recording the horizontal position of the six-degree-of-freedom workpiece stage 24 at this time;
  • Step 3 If the reference alignment mark 41 is not located in the infrared imaging detector 32, the six-degree-of-freedom workpiece stage 24 is stepped to the next search position according to the set displacement amount, and if the search exceeds the set search range, the search is terminated. If the reference alignment mark 41 is found within the search range, repeating step four: moving the six-degree-of-freedom workpiece table 24 to the desired position such that the back alignment mark 20 is within the imaging field of view of the imaging device 3;
  • Step 5 Using the image processing system 33 to determine whether there is a back alignment mark 20 in the infrared imaging detector 32; if the back alignment mark 20 is located in the infrared imaging detector 32, the back alignment mark 20 is calculated by the image processing system 33. Positioning on the target surface of the infrared imaging detector 32, and recording the horizontal position of the six-degree-of-freedom workpiece stage 24 at this time;
  • Step 6 If the back alignment mark 20 is not located in the infrared imaging detector 32, the six-degree-of-freedom workpiece stage 24 is stepped to the next search position according to the set displacement amount, and if the search exceeds the set search range, the search is terminated; If the reference alignment mark is found within the search range, repeat step 5; Step 7: Determine whether the position detection of all the back alignment marks 20 on the target surface of the infrared imaging detector 32 is completed, if all the back alignment marks are not completed. Position detection, repeat step four, step Steps 5 and 6;
  • Step 8 By step 2, the positional relationship between the imaging device 3 and the six-degree-of-freedom workpiece stage 24 can be determined;
  • Step 9 The positional relationship between the back alignment mark 20 and the imaging device 3 can be determined by Step 5, Step 6 and Step 7;
  • Step 10 Through the calculation results of steps 8 and 9, it is possible to determine the positional relationship between the substrate 6 and the six-degree-of-freedom workpiece stage 24, that is, the translation and rotation of the substrate 6 relative to the six-degree-of-freedom workpiece stage 24.
  • the difference between the technical solution adopted by the present invention and the prior art is that: since the back alignment mark illumination device is only designed as one set, the design of the back alignment mark illumination device is reduced, the assembly complexity is reduced, and the utility model is reduced. Development costs. When the back alignment mark illumination device is installed in the marble of the workpiece table or below or above the marble platform, thereby reducing the mutual coupling between the d, the back alignment mark illumination device and the mechanical interface of the wafer carrier, reducing the structural design of the workpiece table And the complexity of the assembly, while reducing the processing cost of the wafer carrier.
  • the back alignment mark of the silicon wafer when the back alignment mark of the silicon wafer is not within the field of view of the imaging device, the back alignment mark can be searched within a certain range by moving the workpiece stage, thereby improving the alignment of the back side of the silicon wafer with the alignment mark on the back side of the silicon wafer. Process adaptability.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

一种背面对准装置及方法
技术领域 本发明涉及一种集成电路制造装备制造领域， 尤其涉及一种用于在半导 体光刻设备实现背面对准的装置及方法。 背景技术
随着人们生活水平不断提高及半导体技术的日益发展， 未来半导体市场 对半导体封装器件的智能化和小型化的程度要求将不断提高， 如相机、 手机、
PDA等数码产品不仅要求体积小便于携带，更要求其功能多样化且性价比低。 为了实现封装器件智能化和小型化的发展要求， 出现了对多硅片封装解决方 案的需要。 多硅片封装是一种将两个或更多平面器件堆叠并连接起来的硅片 级封装方法， 该封装方式也称为三维 (3D)封装。 3D封装实现方式目前主要有 三种： 引线键合 (Wire Bonding), 倒装芯片键合 (Flip Chip Bonding)和贯穿硅片 通孔 (以下筒称 TS V工艺： Through Silicon Via) , 其中 TS V工艺方式相对传统 的引线键合工艺方式， 具有互联引线长度短、 引线密度高、 封装面积小和封 装成本不会随着封装硅片数量增加而大幅度提高等优点， 因此 TSV封装工艺 方式被认为是未来最有潜力、也是最有前途的 3D封装方式之一。 TSV封装工 艺方法是在半导体硅片的正面到背面形成微型通孔， 然后以电气方式将上下 硅片连接起来， 由于采用 3D垂直互联方式， 从而大大缩短了硅片之间的互联 引线长度， 从而使封装器件在体积、 性能及信号存取传输速度上都有了大幅 度提高。
TSV封装工艺方式要求能在硅片背面进行曝光， 因此要求半导体光刻设 备具有背面对准装置以满足硅片背面曝光的工艺需求。 该背面对准装置以硅 片前表面 (或称为硅片正面）已有的图形为硅片背面（或称为硅片后面）对准标 记， 从而确定硅片背面曝光图形与硅片前表面已有图形之间的位置误差。 背 面对准装置的测量精度将直接决定了硅片前后表面光刻图形之间的套刻误 差。
目前实现硅片背面对准的方法主要有两种： 可见光测量法和红外测量法。 可见光测量法主要是在硅片承片台的两侧底部安装光路转折及成像装置， 利 用可见光实现对硅片背面标记的照明和成像。 红外测量法是利用红外光对硅 片的穿透能力来实现对背面标记的照明和成像。 上述两种硅片背面位置对准 方法在结构实现上各有优点及不足之处。
美国专利 US6525805B、 US6768539B中均公开了一种典型的背面对准装 置， 该装置利用可见光测量法通过离轴对准装置实现硅片背面对准， 但是该 装置中背面对准标记照明装置多， 一个背面对准标记对应一套背面对准标记 照明装置， 导致背面对准标记照明装置装配复杂且成本高； 由于背面对准标 记照明装置位于硅片承片台下方， 因此硅片承片台结构设计复杂、 加工成本 高； 同时由于该装置中要求背面对准标记位置必须位于背面对准标记照明装 置的照明视场内， 因此导致工艺适应性差。
美国专利 US6525805B 中还公开了采用红外测量法的硅片背面位置对准 装置， 利用近红外光测量法在硅片承片台内不同位置处安装近红外光源以实 现对硅片背面标记的照明， 然后通过硅片上方的近红外成像装置实现对硅片 背面标记的成像。 该装置中硅片背面标记照明装置安装于硅片承片台内， 因 此工件台结构设计和装配比较复杂， 且加工成本高， 且受到硅片全场对准精 度及硅片承片台空间尺寸的制约； 需要在硅片背面标记照明装置指定位置处 制作相应的硅片背面对准标记， 因此增加了工艺流程及复杂度， 导致工艺适 应性差。 发明内容 为了克服上述技术问题， 本发明提供一种用于实现背面对准的装置及方 法， 该装置及方法结构筒洁， 并能整体降低集成电路制造装备的设计难度及 力口工难度。
为实现上述发明目的， 本发明公开了一种背面对准装置， 用于确定基底 与工件台的相对位置关系， 包括： 辐射源， 用于发出红外线； 工件台装置， 用于支撑基底并移动基底运动； 成像装置， 用于探测对准标记并计算对准标 记位置； 基准版装置， 用于建立成像装置与工件台装置的位置坐标关系； 该 辐射源及该成像装置能实现一套设备对不同对准标记的照明和对准； 该对准 标记包括基准版对准标记及背面对准标记。
更进一步地， 所述工件台装置包括至少三个通光孔， 用于通过红外线。 更进一步地， 所述背面对准装置还包括照明装置。
更进一步地， 所述照明装置位于所述工件台装置的通光孔的正上方， 包 括光纤和照明镜组； 或位于所述工件台装置的通光孔的正下方， 包括光纤、 照明镜组和照明反射镜。
更进一步地， 所述工件台装置包括工件台和位于工件台之下的基座， 所 述工件台至少实现 3 个自由度的移动。 所述工件台装置还包括吸盘， 所述吸 盘位于工件台之上， 所述吸盘由玻璃或对红外光具有较高透过率的材料构成。 所述三个通光孔中包括一个基座通光孔和两个工件台通光孔。
更进一步地， 所述成像装置位于所述工件台装置的通光孔的正上方， 包 括成像镜组、 成像探测器和图像处理系统， 或位于所述工件台装置的通光孔 的正下方， 包括成像镜组、 照明反射镜、 成像探测器和图像处理系统。 成像 探测器是 CCD探测器、 CMOS探测器或 InGaAs探测器。
更进一步地， 所述基准版装置包括基准版、 基准版对准标记及基准版支 架。 所述基准版对准标记位于所述基准版的下表面， 所述基准版固定于所述 基准版支架上， 所述基准版对准标记与背面对准标记位于同一水平面上。 所 述基准版支架由玻璃或对红外光具有较高透过率的材料构成。 所述基准版装 置位于所述工件台或所述吸盘之上。
更进一步地， 所述工件台通光孔的位置、 数量及大小由对准精度以及单 个芯片尺寸大小决定。
本发明同时公开一种背面对准方法， 用于确定基底与工件台的相对位置 关系， 包括：
步骤一： 移动基准版对准标记至成像装置的成像视场范围内，建立成像装 置与工件台的位置坐标关系；
步骤二： 移动背面对准标记至成像装置的成像视场范围内，建立背面对准 标记与成像装置的位置坐标关系；
步骤三： 根据上述两个位置坐标关系获得基底与工件台之间的位置关系。 其中， 步骤一包括：
1.1 : 移动工件台到期望位置， 使基准版对准标记处于成像装置的成像视 场范围内；
1.2: 所述成像装置包括成像探测器和图像处理系统， 利用图像处理系统 判断成像探测器中是否有基准版对准标记； 若基准版对准标记位于成像探测 器中， 则利用图像处理系统计算基准版对准标记在成像探测器靶面上的位置， 同时记录工件台的水平向位置；
1.3: 若基准版对准标记不位于成像探测器中， 则工件台按照设置的位移 量步进到下一个搜索位置， 若搜索超出设置的搜索范围， 则终止搜索； 若在 搜索范围内找到基准版对准标记， 则重复步骤 1.2。
步骤二包括：
2.1 : 移动工件台到期望位置， 使背面对准标记处于成像装置的成像视场 范围内；
2.2: 所述成像装置包括成像探测器和图像处理系统， 利用图像处理系统 判断成像探测器中是否有背面对准标记； 若背面对准标记位于成像探测器中， 则利用图像处理系统计算背面对准标记在红外探测器靶面上的位置， 同时记 录工件台的水平向位置；
2.3: 若背面对准标记不位于成像探测器中， 则工件台按照设置的位移量 步进到下一个搜索位置， 若搜索超出设置的搜索范围， 则终止搜索； 若在搜 索范围内找到基准版对准标记， 则重复步骤 2.2;
判断是否完成所有背面对准标记在成像探测器靶面上的位置探测， 若没 有完成所有背面对准标记位置探测， 则重复步骤 2.1 , 2.2, 2.3。
步骤三包括：
3.1 : 计算成像装置与工件台的位置坐标关系；
3.2: 计算背面对准标记与成像装置的位置坐标关系；
3.3: 获得基底与工件台之间的位置关系。
本发明所采用的技术方案与原有技术的不同之处及其有益效果在于： 由 于照明装置仅设计为一套， 降低照明装置的设计、 装配复杂度， 同时降低开 而减小照明装置与工件台装置机械接口之间的相互耦合， 降低工件台结构设 计和装配的复杂度， 同时降低硅片承片台的加工成本。 同时， 当硅片背面对 准标记不在成像装置的视场范围内时， 可以通过移动工件台在一定范围内搜 索背面对准标记， 因此提高硅片背面对准装置对硅片背面对准标记的工艺适 应性。 附图说明
关于本发明的优点与精神可以通过以下的发明详述及所附图式得到进一 步的了解。
图 1是本发明所涉及的背面对准装置的结构示意图； 图 2是本发明所涉及的背面对准装置的第一实施例的详细结构示意图； 图 3是本发明所涉及的背面对准装置的照明装置布局示意图；
图 4是本发明所涉及的背面对准装置的第二实施例的详细结构示意图； 图 5是本发明所涉及的背面对准装置的第三实施例的详细结构示意图； 图 6是本发明所涉及的背面对准方法的流程图。 具体实施方式
下面结合附图详细说明本发明的具体实施例。
本发明提供一种适用于集成电路制造装备中的背面对准装置及方法。 该 背面对准装置的结构示意图如图 1所示。 5是集成电路制造装备中的投影物镜， 根据需要制造的设备不同， 投影物镜 5 可以是折射式投影物镜、 反射式投影 物镜、 折反射式投影物镜。 1是本发明所述的背面对准装置的照明装置， 该照 明装置 1用于提供红外线照明。 6是基底， 根据需要制造的设备不同， 可以是 硅片、 玻璃基底或其他材质基底。 基底 6放置于工件台装置 2, 工件台装置 2 能够在至少 3个自由度内运动。 照明装置 1发出的红外线经工件台装置 2后 透过位于基底 6上的背面对准标记 20后照射至成像装置 3上。 在本发明中， 基准版（也作基准板）装置 4用于建立成像装置 3与工件台装置 2坐标系之 间的关系。
图 2是本发明所涉及的背面对准装置的第一实施方式。 结合图 1所示， 该背面对准装置包括照明装置 1、 工件台装置 2、成像装置 3及基准版装置 4, 用于根据位于基底 6上的背面对准标记 20, 确定基底 6与工件台装置 2的位 置关系。
如图 2所示， 照明装置 1依次由红外光源 10、 红外照明光纤 11、 照明镜 组 13和照明反射镜 14等构成， 实现对基准版对准标记 41和基底背面对准标 记 20的均匀照明； 所述照明装置 1结构方式上为柯勒照明系统。 柯勒照明系 统的设计可以参见现有技术。
工件台装置 2至少包括一个多自由度工件台 24和大理石基座 26。其中多 自由度工件台 24可以实现至少 3个自由度的运动，优选采用六自由度工件台。 该六自由度工件台 24主要用于支撑基底 6并同时实现基底 6在 6个自由度方 向上的位置调整。 该六自由度工件台 24位于大理石基座 26之上。 基底 6在 本实施例中例示性地选用硅片， 其中背面对准标记 20位于基底 6上。 为了更 好地实现基底 6的位置固定， 通常基底 6通过一吸盘 22放置于六自由度工件 台 24上。 该吸盘 22与背面对准标记 20位于同一个面， 并安装于六自由度工 件台 24上表面。 该吸盘 22由玻璃或对红外光具有较高透过率的材料构成。 件台通光孔 23位于基准版装置 4的正下方， 另一个或多个位于背面对准标记 20的正下方，使照明装置 1所发出的红外光能通过该工件台通光孔 23和吸盘 22对背面对准标记 20及基准版对准标记 41实现均勾照明。 其中， 一个背面 对准标记 20对应一个通光孔 23。 该工件台通光孔 23的位置、 数量及大小主 要取决于对准精度以及单个芯片尺寸大小。
同样的， 大理石基座 26上有一个大理石通光孔 25 , 即基座通光孔， 用于 实现照明装置 1所发出的红外光能穿过大理石基座 26。大理石通光孔 25的位 置位于照明装置 1的正上方， 同时也位于成像装置 3的正下方。 大理石通光 孔 25的大小取决于照明装置 1的照明视场大小以及背面对准标记 20的搜索 范围大小。
基准版装置 4由基准版 40、 基准版对准标记 41和基准版支架 42构成， 用于建立成像装置与工件台坐标系之间的关系。 该基准版对准标记 41位于基 准版 40下表面， 并与硅片背面对准标记 20位于同一水平面上。 基准版 40固 定于基准版支架 42上。 基准版支架 42由玻璃或对红外光具有较高透过率的 材料构成， 因此照明装置 1所发出的红外光能投射过该基准版支架 42, 实现 对基准版对准标记 41的照明。
基准版装置 4固定于六自由度工件台 24或直接放置于吸盘 22上， 可随 六自由度工件台 24的运动调整其在 6个自由度方向上的位置。 照明装置 1位 于背面对准工件台装置 2下方， 其位置不受六自由度工件台 24运动的影响。
成像装置 3位于工件台装置 2上方， 其位置不受六自由度工件台 24运动 的影响。 成像装置 3包括红外成像镜组 31、 红外成像探测器 32以及图像处理 系统 33 , 用于实现背面对准标记 20和基准版对准标记 41在红外成像探测器 32靶面上清晰成像， 同时对上述对准标记位置进行计算。 红外成像探测器 32 用于接收基准版对准标记 41和背面对准标记 20通过红外成像镜组 31所成的 像， 该红外成像探测器 32可以是 CCD(Charge Coupled Device 电荷耦合器件) 摄像机或 CMOS (Complementary Metal-Oxide-Semiconductor Transistor 互补 型金属氧化物半导体)摄像机， 还可以是 InGaAs(Indium Gallium Arsenide砷化 镓铟)探测器。
红外光线从红外光源 10发出， 经红外照明光纤 11、 照明镜组 13、 照明 反射镜 14、 大理石通光孔 25、 工件台通光孔 23、 吸盘 22至基准版对准标记 41或背面对准标记 20, 对基准版对准标记 41和背面对准标记 20实现均匀照 明。 背面对准成像过程从基准版对准标记 41或背面对准标记 20起， 经基准 版 40或基底 6、 红外成像镜组 31、 红外成像探测器 32至图像处理系统 33 , 可实现基准版对准标记 41和 /或背面对准标记 20在红外成像探测器 32上清晰 成像， 同时经图像处理系统 33给出基准版对准标记 41和 /或背面对准标记 20 在红外成像探测器 32靶面上的位置信息。
图 3 是本发明所涉及的背面对准装置的照明装置布局示意图。 结合图 1 所示， 基准版装置 4位于六自由度工件台 24左上角， 实际布局也可以位于六 自由度工件台 24任何一角。 在另一种实施方式中， 基准版装置 4也可以直接 安装于吸盘 22上。 基准版对准标记 41和背面对准标记 20在图中示意性地显 示为十字标记， 但是本领域技术人员应知， 在实际应用过程中基准版对准标 记 41和背面对准标记 20可根据不同对准精度和要求， 选用不同对准标记。 在本实施例中， 采用了三个背面对准标记 20和对应的三个工件台通光孔 23。 工件台通光孔 23大于基准标记 41和背面对准标记 20的照明视场以及搜索范 围。
图 4是本发明所涉及的背面对准装置的第二实施例的详细结构示意图。 在该实施例中， 为实现背面对准装置的结构更加筒化， 减小照明装置与工件 台装置机械接口之间的相互耦合， 降低工件台结构设计和装配的复杂度， 同 时降低光刻机的加工成本， 在本实施例中不采用照明装置 1 , 而直接在工件台 大理石内安装红外光源 25 , 以实现对基准标记 41以及背面对准标记 20的均 匀照明。 由于省略了多个光学元件， 因此相比实施例一结构更加筒单、 成本 更低。
图 5是本发明所涉及的背面对准装置的第三实施例的详细结构示意图。 结合图 1所示， 在该实施例中， 该背面对准装置包括照明装置 1、 工件台装置 2、 成像装置 3及基准版装置 4, 用于根据位于基底 6上的背面对准标记 20, 确定基底 6与工件台装置 2的位置关系。 其中照明装置 1放置于基底 6上方， 而成像装置 3放置于基底 6下方。该实施例中照明装置 1依次由红外光源 10、 红外照明光纤 11、 照明镜组 13等构成， 实现基准版对准标记 41和基底背面 对准标记 20的均匀照明； 所述照明装置 1结构方式上为柯勒照明系统。 该实 施例中成像装置 3由背面对准标记 20、 工件台通光孔 23、 大理石通光孔 25、 红外成像镜组 31、 红外反射镜 34、 红外成像探测器 32以及图像处理系统 33 等构成， 实现背面对准标记 20和基准版对准标记 41在红外成像探测器 32靶 面上清晰成像， 同时对上述对准标记位置进行计算。
本发明同时公开一种背面对准方法，该背面对准方法包括： 移动基准版对 准标记 41至成像装置 3的成像视场范围内， 建立成像装置 3与工件台装置 2 的位置坐标关系； 移动背面对准标记 20至成像装置 3的成像视场范围内， 建 立背面对准标记 20与成像装置 3的位置坐标关系； 根据上述两个位置坐标关 系获得基底 6与工件台装置 2之间的位置关系。
该方法所涉及的流程图如图 6所示：
步骤一： 移动六自由度工件台 24到期望位置， 使基准版对准标记 41处 于成像装置 3的成像视场范围内；
步骤二： 利用图像处理系统 33判断红外成像探测器 32中是否有基准版 对准标记 41 ; 若基准版对准标记 41位于红外成像探测器 32中， 则利用图像 处理系统 33计算基准版对准标记 41在红外成像探测器靶面 32上的位置， 同 时记录此时六自由度工件台 24的水平向位置；
步骤三： 若基准版对准标记 41不位于红外成像探测器 32中， 则六自由 度工件台 24按照设置的位移量步进到下一个搜索位置， 若搜索超出设置的搜 索范围， 则终止搜索； 若在搜索范围内找到基准版对准标记 41 , 则重复步骤 步骤四： 移动六自由度工件台 24到期望位置， 使背面对准标记 20处于 成像装置 3的成像视场范围内；
步骤五： 利用图像处理系统 33判断红外成像探测器 32中是否有背面对 准标记 20; 若背面对准标记 20位于红外成像探测器 32中， 则利用图像处理 系统 33计算背面对准标记 20在红外成像探测器 32靶面上的位置， 同时记录 此时六自由度工件台 24的水平向位置；
步骤六： 若背面对准标记 20不位于红外成像探测器 32中， 则六自由度 工件台 24按照设置的位移量步进到下一个搜索位置， 若搜索超出设置的搜索 范围， 则终止搜索； 若在搜索范围内找到基准版对准标记， 则重复步骤五； 步骤七： 判断是否完成所有背面对准标记 20在红外成像探测器 32靶面 上的位置探测， 若没有完成所有背面对准标记位置探测， 则重复步骤四、 步 骤五和步骤六；
步骤八： 通过步骤二可以确定成像装置 3与六自由度工件台 24的位置关 系；
步骤九： 通过步骤五、 步骤六和步骤七可以确定背面对准标记 20与成像 装置 3之间的位置关系；
步骤十： 通过步骤八和步骤九的计算结果， 就可以确定基底 6与六自由 度工件台 24之间的位置关系， 即基底 6相对六自由度工件台 24的平移与旋 转。
本发明所采用的技术方案与原有技术的不同之处及其有益效果在于： 由 于背面对准标记照明装置仅设计为一套， 降低背面对准标记照明装置的设计、 装配复杂度， 同时降低开发成本。 当该背面对准标记照明装置安装于工件台 大理石内或大理石平台以下或以上， 从而减 d、背面对准标记照明装置与硅片 承片台机械接口之间的相互耦合， 降低工件台结构设计和装配的复杂度， 同 时降低硅片承片台的加工成本。 同时， 当硅片背面对准标记不在成像装置的 视场范围内时， 可以通过移动工件台在一定范围内搜索背面对准标记， 因此 提高硅片背面对准装置对硅片背面对准标记的工艺适应性。
本说明书中所述的只是本发明的较佳具体实施例， 以上实施例仅用以说 明本发明的技术方案而非对本发明的限制。 凡本领域技术人员依本发明的构 思通过逻辑分析、 推理或者有限的实验可以得到的技术方案， 皆应在本发明 的范围之内。

Claims

权利要求
1.一种背面对准装置， 用于对一基底进行对准， 所述基底上具有至少一 个背面对准标记， 其特征在于， 所述背面对准装置包括：
工件台装置， 用于承载所述基底， 包括工件台和位于工件台之下的基座， 所述工件台相对基座至少实现 3个自由度的移动；
基准版装置， 由所述工件台承载， 具有一基准版对准标记；
仅一个照明装置， 位于工件台的一侧， 用于发出红外线；
仅一个成像装置， 位于工件台的另一侧， 且与所述照明装置的位置相对 应；
其中， 所述工件台用于将所述基准版对准标记和所述至少一个背面对准 标记分别移动至所述照明装置和所述成像装置之间， 使得照明装置发出的红 外线照射到所述基准版对准标记或所述背面对准标记上， 并由成像装置探测 所述基准版对准标记或所述背面对准标记经红外线照射后所成的像。
2.如权利要求 1 所述的背面对准装置， 其特征在于， 所述基座包括一个 基座通光孔， 供所述照明装置发出的红外线穿过； 所述工件台包括至少两个 工件台通光孔， 所述工件台通光孔的位置分别与所述基准版对准标记和所述 至少一个背面对准标记的位置相对应。
3.如权利要求 2所述的背面对准装置， 其特征在于， 所述照明装置位于 所述基座的下方， 包括红外光源、 光纤、 照明镜组和照明反射镜， 由所述红 外光源发出红外线， 所述红外线依次经过光纤、 照明镜组和照明反射镜后， 穿过所述基座通光孔； 所述成像装置位于所述工件台的上方， 与所述基座通 光孔的位置相对准， 所述成像装置从下至上依次包括成像镜组、 成像探测器 和图像处理系统。
4.如权利要求 2所述的背面对准装置， 其特征在于， 所述照明装置位于 所述工件台的上方， 与所述基座通光孔的位置相对准， 所述照明装置从上至 下依次包括红外光源、 光纤和照明镜组， 由所述红外光源发出红外线； 所述 成像装置位于所述基座的下方， 包括成像镜组、 照明反射镜、 成像探测器和 图像处理系统， 所述成像镜组与所述基座通光孔的位置相对准， 所述基准版 对准标记或所述背面对准标记经红外线照射后所成的像依次经过成像镜组、 照明反射镜、 成像探测器后， 进入图像处理系统。
5.如权利要求 2所述的背面对准装置， 其特征在于， 所述照明装置位于 所述基座通光孔内， 包括红外光源， 用于发出红外线； 所述成像装置位于所 述工件台的上方， 与所述基座通光孔的位置相对准， 所述成像装置从下至上 依次包括成像镜组、 成像探测器和图像处理系统。
6.如权利要求 3至 5中任一项所述的背面对准装置， 其特征在于， 所述 成像探测器是 CCD探测器、 CMOS探测器或 InGaAs探测器。
7.如权利要求 1 所述的背面对准装置， 其特征在于， 所述工件台装置还 包括位于工件台之上的吸盘， 所述基准版装置和所述基底由所述吸盘承载； 所述吸盘由玻璃或对红外光具有较高透过率的材料构成。
8.如权利要求 1 所述的背面对准装置， 其特征在于， 所述基准版装置包 括基准版和基准版支架， 所述基准版对准标记位于所述基准版的下表面， 所 述基准版固定于所述基准版支架上， 所述基准版对准标记与所述背面对准标 记位于同一水平面上。
9.如权利要求 8所述的背面对准装置， 其特征在于， 所述基准版支架由 玻璃或对红外光具有较高透过率的材料构成。
10. 一种采用如权利要求 1所述的背面对准装置的背面对准方法， 用于 确定基底与工件台的相对位置关系， 其特征在于， 包括：
步骤一： 移动基准版对准标记至成像装置的成像视场范围内，建立成像装 置与工件台的位置坐标关系；
步骤二： 移动背面对准标记至成像装置的成像视场范围内，建立背面对准 标记与成像装置的位置坐标关系； 步骤三： 根据上述两个位置坐标关系获得基底与工件台之间的相对位置 关系。
11. 如权利要求 10所述的背面对准方法， 其特征在于， 所述步骤一包 括：
1.1 : 移动工件台到期望位置， 使基准版对准标记处于成像装置的成像视 场范围内；
1.2: 所述成像装置包括成像探测器和图像处理系统， 利用图像处理系统 判断成像探测器中是否有基准版对准标记； 若基准版对准标记位于成像探测 器中， 则利用图像处理系统计算基准版对准标记在成像探测器靶面上的位置， 同时记录工件台的水平向位置；
1.3: 若基准版对准标记不位于成像探测器中， 则工件台按照设置的位移 量步进到下一个搜索位置， 若搜索超出设置的搜索范围， 则终止搜索； 若在 搜索范围内找到基准版对准标记， 则重复步骤 1.2。
12. 如权利要求 10所述的背面对准方法， 其特征在于， 所述步骤二包 括：
2.1 : 移动工件台到期望位置， 使背面对准标记处于成像装置的成像视场 范围内；
2.2: 所述成像装置包括成像探测器和图像处理系统， 利用图像处理系统 判断成像探测器中是否有背面对准标记； 若背面对准标记位于成像探测器中， 则利用图像处理系统计算背面对准标记在成像探测器靶面上的位置， 同时记 录工件台的水平向位置；
2.3: 若背面对准标记不位于成像探测器中， 则工件台按照设置的位移量 步进到下一个搜索位置， 若搜索超出设置的搜索范围， 则终止搜索； 若在搜 索范围内找到基准版对准标记， 则重复步骤 2.2;
判断是否完成所有背面对准标记在成像探测器靶面上的位置探测， 若没 有完成所有背面对准标记位置探测， 则重复步骤 2.1 , 2.2, 2.3。
PCT/CN2011/084264 2010-12-28 2011-12-20 一种背面对准装置及方法 Ceased WO2012089043A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP11852338.0A EP2660656B1 (en) 2010-12-28 2011-12-20 Backside registration apparatus and method
US13/976,376 US9188434B2 (en) 2010-12-28 2011-12-20 Backside alignment apparatus and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201010619055.2 2010-12-28
CN201010619055.2A CN102540781B (zh) 2010-12-28 2010-12-28 一种背面对准装置及方法

Publications (1)

Publication Number Publication Date
WO2012089043A1 true WO2012089043A1 (zh) 2012-07-05

Family

ID=46347945

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2011/084264 Ceased WO2012089043A1 (zh) 2010-12-28 2011-12-20 一种背面对准装置及方法

Country Status (5)

Country Link
US (1) US9188434B2 (zh)
EP (1) EP2660656B1 (zh)
CN (1) CN102540781B (zh)
TW (1) TW201236103A (zh)
WO (1) WO2012089043A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104022060A (zh) * 2013-03-01 2014-09-03 中芯国际集成电路制造(上海)有限公司 晶圆背面对准的方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9041919B2 (en) * 2013-02-18 2015-05-26 Globalfoundries Inc. Infrared-based metrology for detection of stress and defects around through silicon vias
CN104155850B (zh) * 2013-05-13 2017-06-27 上海微电子装备有限公司 用于光刻设备的正面与背面对准测量装置
TWI544567B (zh) * 2013-06-27 2016-08-01 先進科技新加坡有限公司 使用成像設備以調整半導體元件的處理設備的裝置和方法
CN104749158B (zh) 2013-12-27 2020-12-11 同方威视技术股份有限公司 珠宝玉石鉴定方法及装置
CN105277131B (zh) * 2014-05-26 2020-11-20 上海微电子装备（集团）股份有限公司 三维孔结构的测量装置与测量方法
JP6465591B2 (ja) * 2014-08-27 2019-02-06 株式会社オーク製作所 描画装置
CN105807578A (zh) * 2014-12-29 2016-07-27 上海微电子装备有限公司 一种背面对准测量装置及方法
US20170138820A1 (en) * 2015-11-16 2017-05-18 General Electric Company Systems and methods for monitoring components
US12057332B2 (en) * 2016-07-12 2024-08-06 Ayar Labs, Inc. Wafer-level etching methods for planar photonics circuits and devices
JP6742272B2 (ja) * 2017-05-16 2020-08-19 三菱電機株式会社 ウェハ異常箇所検出用装置およびウェハ異常箇所特定方法
US10381404B2 (en) 2017-08-07 2019-08-13 Globalfoundries Singapore Pte. Ltd. Integrated circuits with memory cells and methods for producing the same
JP6980562B2 (ja) * 2018-02-28 2021-12-15 キヤノン株式会社 パターン形成装置、アライメントマークの検出方法及びパターン形成方法
CN110504203B (zh) * 2018-05-18 2024-11-22 上海微电子装备（集团）股份有限公司 一种工作台及背面对准装置
CN110246771B (zh) * 2019-06-18 2021-06-15 武汉新芯集成电路制造有限公司 一种晶圆键合的设备及方法
CN110600414A (zh) * 2019-08-01 2019-12-20 中国科学院微电子研究所 晶圆异构对准方法及装置
CN112018002A (zh) * 2020-08-25 2020-12-01 武汉新芯集成电路制造有限公司 晶圆键合设备及晶圆键合的方法
TWI794734B (zh) * 2021-01-29 2023-03-01 川寶科技股份有限公司 決定基板之轉向的方法與曝光機台
CN113791524A (zh) * 2021-09-30 2021-12-14 深圳迈塔兰斯科技有限公司 用于超表面加工的光刻系统及方法
EP4589386A3 (en) * 2021-11-01 2025-10-01 Esko-Graphics Imaging GmbH System and process for persistent marking of flexo plates with isolated microstructures and plates marked therewith
DE102022119035A1 (de) * 2022-07-28 2024-02-08 4Jet Microtech Gmbh Detektionsaufbau
CN115632018A (zh) * 2022-09-27 2023-01-20 北京华卓精科科技股份有限公司 晶圆对准方法及对准装置
US12222659B2 (en) * 2023-01-18 2025-02-11 Applied Materials, Inc. Metrology system for packaging applications
TWI875293B (zh) * 2023-11-07 2025-03-01 由田新技股份有限公司 輔助標記產生方法、工件對準方法、及工件對準系統
JP2026036495A (ja) * 2024-08-20 2026-03-05 株式会社Ｓｃｒｅｅｎホールディングス 基板接合装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000299276A (ja) * 1999-04-15 2000-10-24 Nikon Corp 露光装置
US6198535B1 (en) * 1998-08-20 2001-03-06 United Integrated Circuits Corp. Wafer alignment system
US6525805B2 (en) 2001-05-14 2003-02-25 Ultratech Stepper, Inc. Backside alignment system and method
US6768539B2 (en) 2001-01-15 2004-07-27 Asml Netherlands B.V. Lithographic apparatus
CN101382743A (zh) * 2008-10-27 2009-03-11 上海微电子装备有限公司 同轴双面位置对准系统及位置对准方法
CN101436006A (zh) * 2008-12-17 2009-05-20 上海微电子装备有限公司 双面位置对准装置与方法
CN101685275A (zh) * 2008-09-25 2010-03-31 上海华虹Nec电子有限公司 对准标记及制作方法以及其探测装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4452526A (en) * 1980-02-29 1984-06-05 Optimetrix Corporation Step-and-repeat projection alignment and exposure system with auxiliary optical unit
US4475122A (en) * 1981-11-09 1984-10-02 Tre Semiconductor Equipment Corporation Automatic wafer alignment technique
US5843831A (en) * 1997-01-13 1998-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Process independent alignment system
US6676878B2 (en) * 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
US7365848B2 (en) * 2004-12-01 2008-04-29 Asml Holding N.V. System and method using visible and infrared light to align and measure alignment patterns on multiple layers
US7751067B1 (en) * 2007-05-24 2010-07-06 Ultratech, Inc. Substrate-alignment using detector of substrate material
NL2003990A (en) * 2008-12-30 2010-07-01 Asml Netherlands Bv A method of determining a characteristic.

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198535B1 (en) * 1998-08-20 2001-03-06 United Integrated Circuits Corp. Wafer alignment system
JP2000299276A (ja) * 1999-04-15 2000-10-24 Nikon Corp 露光装置
US6768539B2 (en) 2001-01-15 2004-07-27 Asml Netherlands B.V. Lithographic apparatus
US20040201833A1 (en) * 2001-01-15 2004-10-14 Asml Netherlands B.V. Lithographic apparatus
US6525805B2 (en) 2001-05-14 2003-02-25 Ultratech Stepper, Inc. Backside alignment system and method
CN101685275A (zh) * 2008-09-25 2010-03-31 上海华虹Nec电子有限公司 对准标记及制作方法以及其探测装置
CN101382743A (zh) * 2008-10-27 2009-03-11 上海微电子装备有限公司 同轴双面位置对准系统及位置对准方法
CN101436006A (zh) * 2008-12-17 2009-05-20 上海微电子装备有限公司 双面位置对准装置与方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2660656A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104022060A (zh) * 2013-03-01 2014-09-03 中芯国际集成电路制造(上海)有限公司 晶圆背面对准的方法

Also Published As

Publication number Publication date
EP2660656A4 (en) 2015-01-07
EP2660656A1 (en) 2013-11-06
TWI460813B (zh) 2014-11-11
US9188434B2 (en) 2015-11-17
TW201236103A (en) 2012-09-01
CN102540781B (zh) 2015-09-30
US20130271750A1 (en) 2013-10-17
EP2660656B1 (en) 2016-03-09
CN102540781A (zh) 2012-07-04

Similar Documents

Publication Publication Date Title
WO2012089043A1 (zh) 一种背面对准装置及方法
CN101436006B (zh) 双面位置对准装置与方法
CN101382743B (zh) 同轴双面位置对准系统及位置对准方法
CN102081312B (zh) 双面对准装置及其对准方法
WO2023070283A1 (zh) 晶圆键合设备及方法
CN106569390B (zh) 一种投影曝光装置及方法
CN107331643B (zh) 对准装置及其方法
CN104035287B (zh) 曝光装置及其曝光方法
JP2009135166A (ja) 露光方法及び装置、露光ユニット、並びにデバイス製造方法
CN114793466A (zh) 晶圆键合设备及方法
CN102540782A (zh) 用于光刻设备的对准装置及方法
KR20170136446A (ko) 패턴 형성 장치, 기판을 배치하는 방법, 및 물품을 제조하는 방법
TWI614823B (zh) 雙層對準裝置和雙層對準方法
CN104035286A (zh) 圆筒形掩模板系统、曝光装置和曝光方法
WO2017167260A1 (zh) 同轴掩模对准装置、光刻设备及对准方法
WO2017167258A1 (zh) 一种投影曝光装置及方法
JP2011077289A (ja) 基板位置決め方法
CN115031626B (zh) 一种基片坐标测量方法
CN101158816A (zh) 一种分时对准装置和对准方法
CN110095955A (zh) 一种对准照明模块、对准装置、光刻机和对准方法
WO2007079639A1 (en) Ttl alignment system for projection exposure apparatus and alignment method
CN100578369C (zh) 用于投影曝光装置中的自动位置对准装置和位置对准方法
JP6115543B2 (ja) アライメント装置、露光装置、およびアライメント方法
TW201227195A (en) An image acquisition device for the precision alignment and its module
CN103246166B (zh) 一种硅片预对准测量装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11852338

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 13976376

Country of ref document: US

Ref document number: 2011852338

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE