WO2012138821A3 - Reusable substrates for electronic device fabrication and methods thereof - Google Patents

Reusable substrates for electronic device fabrication and methods thereof Download PDF

Info

Publication number
WO2012138821A3
WO2012138821A3 PCT/US2012/032254 US2012032254W WO2012138821A3 WO 2012138821 A3 WO2012138821 A3 WO 2012138821A3 US 2012032254 W US2012032254 W US 2012032254W WO 2012138821 A3 WO2012138821 A3 WO 2012138821A3
Authority
WO
WIPO (PCT)
Prior art keywords
electronic device
device fabrication
methods
grooves
planar surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/032254
Other languages
French (fr)
Other versions
WO2012138821A2 (en
Inventor
Baoguo ZHANG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lux Material Co Ltd
Original Assignee
Lux Material Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lux Material Co Ltd filed Critical Lux Material Co Ltd
Priority to EP12768541.0A priority Critical patent/EP2695187A2/en
Publication of WO2012138821A2 publication Critical patent/WO2012138821A2/en
Anticipated expiration legal-status Critical
Publication of WO2012138821A3 publication Critical patent/WO2012138821A3/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/2457—Parallel ribs and/or grooves

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

Substrates for electronic device fabrication and methods thereof. A reusable substrate with at least a plurality of grooves for electronic device fabrication includes a substrate body made of one or more substrate materials and including a top planar surface, the top planar surface being divided into a plurality of planer regions by the plurality of grooves, the plurality of grooves including a plurality of bottom planar surfaces. Each of the plurality of grooves includes a bottom planar surface and two side surfaces, the bottom planar surface being selected from the plurality of bottom planar surfaces, the two side surfaces being in contact with the top surface and the bottom surface. The bottom planar surface is associated with a groove width from one of the two side surfaces to the other of the two side surfaces, the groove width ranging from 0.1 μm to 5 mm.
PCT/US2012/032254 2011-04-08 2012-04-05 Reusable substrates for electronic device fabrication and methods thereof Ceased WO2012138821A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP12768541.0A EP2695187A2 (en) 2011-04-08 2012-04-05 Reusable substrates for electronic device fabrication and methods thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161516755P 2011-04-08 2011-04-08
US61/516,755 2011-04-08

Publications (2)

Publication Number Publication Date
WO2012138821A2 WO2012138821A2 (en) 2012-10-11
WO2012138821A3 true WO2012138821A3 (en) 2014-05-01

Family

ID=46969805

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/032254 Ceased WO2012138821A2 (en) 2011-04-08 2012-04-05 Reusable substrates for electronic device fabrication and methods thereof

Country Status (3)

Country Link
US (1) US8841207B2 (en)
EP (1) EP2695187A2 (en)
WO (1) WO2012138821A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8841207B2 (en) * 2011-04-08 2014-09-23 Lux Material Co., Ltd. Reusable substrates for electronic device fabrication and methods thereof
US9224911B2 (en) * 2012-09-12 2015-12-29 High Power Opto. Inc. Method for separating light-emitting diode from a substrate

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6163557A (en) * 1998-05-21 2000-12-19 Xerox Corporation Fabrication of group III-V nitrides on mesas
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
US20020068201A1 (en) * 1994-01-27 2002-06-06 Vaudo Robert P. Free-standing (Al, Ga, In)N and parting method for forming same
US6429095B1 (en) * 1997-12-26 2002-08-06 Canon Kabushiki Kaisha Semiconductor article and method of manufacturing the same
US20030114017A1 (en) * 2001-12-18 2003-06-19 Xerox Corporation Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
US20080067622A1 (en) * 2006-09-15 2008-03-20 Peter Steven Bui High density photodiodes
US20090035534A1 (en) * 2007-07-30 2009-02-05 Juh-Yuh Su Method and structure of a reusable substrate
US20100109019A1 (en) * 2008-11-04 2010-05-06 Canon Kabushiki Kaisha Forming method of gallium nitride system compound semiconductor layer, transfer method of the same, and substrate structure with the same bonded thereto
US20100270651A1 (en) * 2009-04-27 2010-10-28 Aurotek Corporation Sapphire substrate with periodical structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177359B1 (en) * 1999-06-07 2001-01-23 Agilent Technologies, Inc. Method for detaching an epitaxial layer from one substrate and transferring it to another substrate
US6323108B1 (en) * 1999-07-27 2001-11-27 The United States Of America As Represented By The Secretary Of The Navy Fabrication ultra-thin bonded semiconductor layers
EP1706893A2 (en) 2003-12-24 2006-10-04 Gelcore LLC Laser lift-off of sapphire from a nitride flip-chip
WO2010020077A1 (en) * 2008-08-22 2010-02-25 Lattice Power (Jiangxi) Corporation Method for fabricating ingaain light-emitting device on a combined substrate
KR101052818B1 (en) * 2008-11-18 2011-07-29 세메스 주식회사 Maintenance method in substrate processing apparatus and substrate processing apparatus
TWI573185B (en) * 2009-05-12 2017-03-01 美國伊利諾大學理事會 Printing assembly for ultra-thin micro-scale inorganic light-emitting diode for deformable and translucent displays
WO2011069242A1 (en) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus
TWI562195B (en) * 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
CN102087484B (en) 2010-12-24 2013-01-16 长治虹源科技晶体有限公司 Method for photoengraving graphical sapphire substrate
US8841207B2 (en) * 2011-04-08 2014-09-23 Lux Material Co., Ltd. Reusable substrates for electronic device fabrication and methods thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020068201A1 (en) * 1994-01-27 2002-06-06 Vaudo Robert P. Free-standing (Al, Ga, In)N and parting method for forming same
US6429095B1 (en) * 1997-12-26 2002-08-06 Canon Kabushiki Kaisha Semiconductor article and method of manufacturing the same
US6163557A (en) * 1998-05-21 2000-12-19 Xerox Corporation Fabrication of group III-V nitrides on mesas
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
US20030114017A1 (en) * 2001-12-18 2003-06-19 Xerox Corporation Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
US20080067622A1 (en) * 2006-09-15 2008-03-20 Peter Steven Bui High density photodiodes
US20090035534A1 (en) * 2007-07-30 2009-02-05 Juh-Yuh Su Method and structure of a reusable substrate
US20100109019A1 (en) * 2008-11-04 2010-05-06 Canon Kabushiki Kaisha Forming method of gallium nitride system compound semiconductor layer, transfer method of the same, and substrate structure with the same bonded thereto
US20100270651A1 (en) * 2009-04-27 2010-10-28 Aurotek Corporation Sapphire substrate with periodical structure

Also Published As

Publication number Publication date
US20130095640A1 (en) 2013-04-18
US8841207B2 (en) 2014-09-23
WO2012138821A2 (en) 2012-10-11
EP2695187A2 (en) 2014-02-12

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