WO2012141544A3 - Ｔｓｖ 측정용 간섭계 및 이를 이용한 측정방법 - Google Patents

Ｔｓｖ 측정용 간섭계 및 이를 이용한 측정방법 Download PDF

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Publication number
WO2012141544A3
WO2012141544A3 PCT/KR2012/002843 KR2012002843W WO2012141544A3 WO 2012141544 A3 WO2012141544 A3 WO 2012141544A3 KR 2012002843 W KR2012002843 W KR 2012002843W WO 2012141544 A3 WO2012141544 A3 WO 2012141544A3
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WO
WIPO (PCT)
Prior art keywords
tsv
measurement
beam splitter
light
interferometer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/002843
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English (en)
French (fr)
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WO2012141544A2 (ko
Inventor
이기훈
신흥현
박희재
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SNU Precision Co Ltd
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SNU Precision Co Ltd
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Publication date
Application filed by SNU Precision Co Ltd filed Critical SNU Precision Co Ltd
Priority to US14/111,197 priority Critical patent/US8873067B2/en
Priority to JP2014505083A priority patent/JP5751734B2/ja
Priority to CN201280018215.5A priority patent/CN103460368B/zh
Publication of WO2012141544A2 publication Critical patent/WO2012141544A2/ko
Publication of WO2012141544A3 publication Critical patent/WO2012141544A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)

Abstract

본 발명은TSV 측정용 간섭계 및 이를 이용한 측정방법에 관한 것으로서, 본 발명에 따른 TSV 측정용 간섭계는 광원으로부터 생성된 광이 입사되어 서로 수직인 제1방향과 제2방향으로 분할하여 출력하며, 상기 제1방향과 제2방향으로부터 입력되는 광을 결합하여 결합광으로 출력하는 빔 스플리터; 상기 제1방향 또는 상기 제2방향에 각각 배치되어 상기 빔 스플리터로부터 출력된 출력광이 입력된 후 상기 빔 스플리터로 반사하는 미러와 적어도 하나의 TSV가 형성된 측정대상물; 상기 미러 및 상기 측정대상물로부터 반사되어 상기 빔 스플리터로부터 출력된 결합광을 입력받고, 상기 결합광을 통해 간섭신호가 형성되는 촬상수단; 상기 빔 스플리터와 상기 촬상수단의 사이에 위치하거나 상기 빔 스플리터와 상기 측정대상물의 사이에 위치하는 대물렌즈; 및, 상기 빔 스플리터와 상기 촬상수단의 사이에 위치하여 상기 측정대상물로 분할된 광의 초점이 상기 TSV의 입구인 기준위치와 상기 TSV의 바닥면인 가변위치로 조절되도록 하는 가변형 필드 스톱;을 포함하여, 상기 기준위치에서의 간섭신호와 상기 가변위치에서의 간섭신호를 토대로 상기 비아홀의 직경과 깊이를 측정하는 것을 특징으로 한다. 이에 의하여, TSV 측정시 TSV의 입구와 바닥면으로 광의 초점이 조절되도록 하는 가변형 필드 스톱을 이용하여 TSV의 직경 및 깊이를 측정하여 측정시간 및 결과데이터의 용량을 줄일 수 있고, TSV로 입사되는 광이 실질적으로 직선광이 되도록 하는 텔레센트릭 렌즈를 이용하여, TSV와 같은 종횡비가 큰 경우에도 바닥면까지 도달하는 광량이 확보되어 측정의 정확도를 향상시킬 수 있는 TSV 측정용 간섭계 및 이를 이용한 측정방법이 제공된다.
PCT/KR2012/002843 2011-04-13 2012-04-13 Ｔｓｖ 측정용 간섭계 및 이를 이용한 측정방법 Ceased WO2012141544A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US14/111,197 US8873067B2 (en) 2011-04-13 2012-04-13 Interferometer for TSV measurement and measurement method using same
JP2014505083A JP5751734B2 (ja) 2011-04-13 2012-04-13 Ｔｓｖ測定用干渉計及びこれを用いた測定方法
CN201280018215.5A CN103460368B (zh) 2011-04-13 2012-04-13 Tsv检测用干涉仪以及利用该干涉仪的检测方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0034264 2011-04-13
KR1020110034264A KR101186464B1 (ko) 2011-04-13 2011-04-13 Ｔｓｖ 측정용 간섭계 및 이를 이용한 측정방법

Publications (2)

Publication Number Publication Date
WO2012141544A2 WO2012141544A2 (ko) 2012-10-18
WO2012141544A3 true WO2012141544A3 (ko) 2013-01-10

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PCT/KR2012/002843 Ceased WO2012141544A2 (ko) 2011-04-13 2012-04-13 Ｔｓｖ 측정용 간섭계 및 이를 이용한 측정방법

Country Status (6)

Country Link
US (1) US8873067B2 (ko)
JP (1) JP5751734B2 (ko)
KR (1) KR101186464B1 (ko)
CN (1) CN103460368B (ko)
TW (1) TWI442015B (ko)
WO (1) WO2012141544A2 (ko)

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KR101414255B1 (ko) * 2013-03-29 2014-07-01 에스엔유 프리시젼 주식회사 Ｔｓｖ 측정장치 및 측정방법
CN104279978B (zh) * 2013-07-12 2018-01-19 上海微电子装备（集团）股份有限公司 三维图形检测装置及测量方法
KR20160025425A (ko) * 2014-08-27 2016-03-08 삼성전기주식회사 패키지 모듈 측정장치 및 측정방법
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US9709386B1 (en) * 2016-04-05 2017-07-18 Kla-Tencor Corporation Apparatus and methods for measuring properties in a TSV structure using beam profile reflectometry
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
WO2018067243A1 (en) * 2016-10-04 2018-04-12 Kla-Tencor Corporation Expediting spectral measurement in semiconductor device fabrication
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US11476081B2 (en) * 2019-09-04 2022-10-18 Applied Materials Israel Ltd. Evaluating an intermediate product related to a three-dimensional NAND memory unit
KR102428402B1 (ko) * 2020-08-18 2022-08-02 (주)뮤텍코리아 마이크로 엘이디 검사 시스템
US11965731B2 (en) * 2020-11-03 2024-04-23 Taiwan Semiconductor Manufacturing Company Ltd. Package structure and measurement method for the package structure
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Also Published As

Publication number Publication date
WO2012141544A2 (ko) 2012-10-18
TWI442015B (zh) 2014-06-21
US20140036273A1 (en) 2014-02-06
JP2014514559A (ja) 2014-06-19
US8873067B2 (en) 2014-10-28
CN103460368B (zh) 2016-01-06
TW201243272A (en) 2012-11-01
JP5751734B2 (ja) 2015-07-22
CN103460368A (zh) 2013-12-18
KR101186464B1 (ko) 2012-09-27

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