WO2012174683A1 - 光束整形元件光学性能的检测装置和检测方法 - Google Patents

光束整形元件光学性能的检测装置和检测方法 Download PDF

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Publication number
WO2012174683A1
WO2012174683A1 PCT/CN2011/001063 CN2011001063W WO2012174683A1 WO 2012174683 A1 WO2012174683 A1 WO 2012174683A1 CN 2011001063 W CN2011001063 W CN 2011001063W WO 2012174683 A1 WO2012174683 A1 WO 2012174683A1
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Prior art keywords
far field
imaging lens
shaping element
beam shaping
field imaging
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PCT/CN2011/001063
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English (en)
French (fr)
Inventor
朱菁
黄惠杰
曾爱军
胡中华
杨宝喜
陈明
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Priority to US14/125,581 priority Critical patent/US9121788B2/en
Priority to EP11838977.4A priority patent/EP2562526B1/en
Publication of WO2012174683A1 publication Critical patent/WO2012174683A1/zh
Anticipated expiration legal-status Critical
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • B23K26/705Beam measuring devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • B23K26/707Auxiliary equipment for monitoring laser beam transmission optics
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0009Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
    • G02B19/0014Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components

Definitions

  • the invention belongs to the field of microlithography, in particular to a detecting device and a detecting method for optical properties of a beam shaping element used in an illumination system of an ultraviolet lithography machine. Background technique
  • UV band mercury lamp i-line wavelength is 365nm ; deep ultraviolet Band:
  • the argon fluoride ArF laser has a wavelength of 193 nm and the krypton fluoride KrF laser has a wavelength of 248 nm.
  • the wavelength of the ultraviolet light source is short, which is beneficial to reduce Small feature line width size, which improves the integration of devices (such as CPU, memory, etc.).
  • the beam shaping element in the illumination system also operates in the ultraviolet band depending on the wavelength selection of the illumination source described above.
  • beam shaping elements are typically implemented using diffractive optics. Before the beam shaping element is mounted to the illumination system, its optical performance must be tested. In addition to the off-axis illumination function, the beam shaping element designed and manufactured needs to have the highest possible energy utilization and reduce the energy loss during illumination mode switching. Therefore, the optical performance detection for the beam shaping element mainly includes the measurement of the far field intensity distribution and the energy utilization rate.
  • the ultraviolet ray In the traditional detection scheme, it is necessary to use the ultraviolet ray at the same working wavelength as the beam shaping element.
  • Optical system, UV CCD image sensor, and UV energy sensor construction test system [see John E Childers, Tom Baker, Tim Emig, James Carriere, Marc D. Himel, Proc. of SPIE Vol. 7430, 74300S, 2009].
  • the measurement needs to measure the exit beam of the beam shaping element at the far field (the focal plane of the far field imaging lens) on the UV CCD image sensor to measure the far field intensity distribution, or converge into the UV energy sensor for energy utilization measurement.
  • the main disadvantage of the above prior art is that the test system needs to work at the ultraviolet working wavelength, and the optical path adjustment is inconvenient; the ultraviolet laser, the ultraviolet CCD image sensor and the ultraviolet energy sensor required for the test system are relatively expensive; the ultraviolet laser is used in operation.
  • the fluorine-containing mixed gas has strong corrosiveness and toxicity; the ultraviolet laser cannot be directly observed by the human eye, which brings inconvenience to the alignment and debugging of the optical path of the system.
  • the object of the present invention is to overcome the above-mentioned deficiencies of the prior art, and to provide a detecting device and a detecting method for a beam shaping element of an ultraviolet lithography machine, which are suitable for optical performance detection of a beam shaping element in any ultraviolet band And it has the characteristics of low cost, easy to use and fast measurement.
  • a device for detecting optical performance of a beam shaping element of an ultraviolet lithography machine characterized in that the composition comprises a visible laser, and a beam expander lens and a beam splitter are sequentially arranged in the direction of the output laser of the visible laser. a first far field imaging lens, a dimmable pupil, a second far field imaging lens, and a second energy sensor;
  • the beam splitter is disposed at 45° to the optical axis, and a first energy sensor is disposed in a direction of reflected light of the beam splitter;
  • the beam shaping element to be tested is located on the object focal plane of the first far field imaging lens, and the focal lengths of the first far field imaging lens and the second far field imaging lens are both f, the first far field imaging lens and The distance between the second far field imaging lens) is 2f, and the second energy sensor bit An image focal plane of the second far field imaging lens;
  • the dimming surface is disposed at a confocal surface of the first far field imaging lens and the second far field imaging lens, or a CCD image sensor is disposed, the center of the photosensitive surface of the CCD image sensor having a center obstruction.
  • the object focal plane of the first far field imaging lens is provided with an adjustment frame for the beam shaping element to be tested.
  • an interchange mechanism for CCD image sensor and dimmable ⁇ interchangeable with a central obscuration is provided, when the interchange mechanism is changed In the position, the dimming aperture and the CCD image sensor are transposed and their centers are placed on the optical axis in the optical path.
  • the beam splitter is a half mirror.
  • / is the focal length of the first far field imaging lens
  • is the lateral dimension of the step of the beam shaping element, is the visible laser wavelength
  • a far field intensity distribution size D D'A / i'; 1 Measure the zero-order diffraction efficiency with a laser with a visible wavelength of A':
  • the dimming aperture of the dimmable aperture is reduced, and only the center zero-order beam passes, and the second energy sensor is used to measure the zero-order intensity I.
  • the incident light intensity Iin is measured by the first energy sensor, and the following formula is used to calculate the measured light intensity. Number of steps of the beam shaping element
  • the present invention has the following technical achievements:
  • the present invention utilizes visible light to measure the optical performance of a beam shaping element in an ultraviolet lithography illumination system, including far field intensity distribution and energy utilization, and the laser, CCD image sensor and energy sensor used in the device operate in visible light.
  • the band, the price is much lower than the above-mentioned equipment in the ultraviolet band, and the optical path debugging in the visible light band is convenient and safe.
  • the present invention can be applied to the optical performance detection of any ultraviolet beam shaper without being limited to a certain wavelength. Moreover, it has the characteristics of low cost, easy to use and fast measurement. DRAWINGS
  • Figure 1 is the simulation result: the far field intensity of the same beam shaping element at two different wavelengths Schematic diagram of the cloth.
  • FIG. 2 is a schematic view of an optical performance detecting device of the beam shaping element of the present invention. detailed description
  • Figure 1 for the distribution of the annular far-field intensity generated by the beam shaping element in the UV lithography machine.
  • the intensity distribution of the far-field light changes after the wavelength of the illumination source changes.
  • the distribution is ring illumination with an outer diameter of 20 mm and the beam shaping element has a light transmission size of 10 mm x 10 mm.
  • AHVU M>1
  • the size of the far-field light intensity distribution (102) is expanded to the original M times, but the shape is almost unchanged, and a strong spot appears in the center.
  • the size D of the far-field intensity distribution is proportional to the wavelength 1 [Yu Dao Yin, Tan Hengying, Engineering Optics ( Second Edition), Mechanical Industry Press, 2005, p. 345]:
  • / is the focal length of the far field imaging lens
  • is the horizontal dimension of the step in the beam shaping element. It can be seen from equation (1) that when the wavelength changes, the far-field distribution size changes in the same proportion.
  • the beam shaping element is usually a diffractive optical element, which is a phase grating composed of a plurality of sets of stepped reliefs, and the intensity distribution of the diffraction spectra of each stage is [Yu Dao Yin, Talk Heng Ying, Engineering Optics (Second Edition), Mechanical Industry Press, 2005, p. 366]:
  • is the amplitude of the illumination light, is the diffraction order, 4 is the intensity of the «order diffraction order, W is the number of steps, A is the maximum step height, A is the wavelength of the incident laser, "is the material at wavelength 1 The refractive index underneath.
  • the energy utilization expression is:
  • the energy utilization expression is:
  • the number of steps is the number of equalizations of the phase 0 ⁇ 2 ⁇ in the beam shaping element.
  • the number of steps can be obtained by zero-order diffraction efficiency.
  • the zero-order diffraction efficiency is:
  • the apparatus for detecting optical performance of the beam shaping element of the ultraviolet lithography apparatus of the present invention comprises a visible laser 201, and the beam expander lens group 202 is sequentially provided in the direction in which the visible laser 201 outputs the laser light and the optical axis.
  • the beam splitter 203 is disposed at 45° to the optical axis, and a first energy sensor 204 is disposed in the direction of the reflected light of the beam splitter 203;
  • the beam shaping element 205 to be tested is located on the object focal plane of the first far field imaging lens 206, and the focal lengths of the first far field imaging lens 206 and the second far field imaging lens 209 are both f, the first far The distance between the field imaging lens 206 and the second far field imaging lens 209 is 2f, and the second energy sensor 210 is located at the image focal plane of the second far field imaging lens 209;
  • the confocal surface of the far field imaging lens 206 and the second far field imaging lens 209 is provided with the dimming pad 208, or a CCD image sensor 207-2 is provided, the center of the photosensitive surface of the CCD image sensor 207-2 having a center Block 207-1.
  • the object focal plane of the first far field imaging lens 206 is provided with an adjustment frame for the beam shaping element 205 to be tested.
  • a mutual exchange is provided for the CCD image sensor 207-2 having the center mask 207-1 and the dimmable pupil 208.
  • the changing mechanism when the interchangeable mechanism is indexed, the adjustable aperture 208 and the CCD image sensor 207-2 are indexed, and the center thereof is placed on the optical axis in the optical path.
  • a visible wavelength laser 201 such as a HeNe laser with a wavelength of 632.8 nm
  • the beam splitter 203 adopts a half mirror, and reflects half of the laser energy to the input first energy sensor 204.
  • the diameter of the first energy sensor 204 at the input end needs to be greater than 14.14 mm, and the other half of the energy laser is vertically irradiated on the beam.
  • the above optical path is a shared optical path, and the subsequent optical path is divided into two cases: A optical path is used to measure the far field intensity distribution, and B optical path is used to measure the energy utilization rate, which are respectively stated below.
  • the far field intensity distribution of the beam shaping element is measured using a 2-/ optical path arrangement in the A beam path.
  • the beam shaping element 205 is located on the front focal plane of the first far field imaging lens 206
  • the CCD image sensor 207-2 is located on the back focal plane of the first far field imaging lens 206, constituting a 2-/ optical path arrangement.
  • the focal length of the first far field imaging lens 206 should be selected according to the size of the CCD in the CCD image sensor 207-2, based on:
  • NA is the output numerical aperture of the beam shaping element 205.
  • NA is related to the step lateral dimension ⁇ / of the beam shaping element 205 and the laser wavelength 1 , and the calculation formula is:
  • the focal length of the first far field imaging lens 206 should satisfy:
  • the CCD size / selection is 12 mm
  • the laser wavelength is 632.8 nm
  • the lateral dimension d of the step is 5 ⁇ , so / 40 mm can be selected.
  • a position of the front end of the CCD image sensor 207-2 near the CCD should be placed with a central obscuration 207-1 to block the central spot.
  • the ratio of the imaging area of the central obscuration 207-1 to the CCD image sensor 207-2 should be less than 0.05.
  • a diameter of 0.5 mm is selected. The center of the circle is obscured.
  • the measurement process of the beam shaping element is as follows:
  • the measured far-field intensity distribution is reduced according to the size ratio ⁇ ' ⁇ ⁇ .
  • the ratio is 2.55 times
  • the reduced light intensity distribution is the light intensity distribution at the ultraviolet working wavelength.
  • the B optical path in Fig. 2 is used to measure the energy utilization of the beam shaping element 205.
  • a 4-/ optical path arrangement is employed in the B-optical path, i.e., the first far-field imaging lens 206 and the second far-field imaging lens 209 are placed in the optical path, and the beam shaping element 205 is placed in front of the first far-field imaging lens 206.
  • the focal plane, the iris 208 is placed on the back focal plane of the first far field imaging lens 206 and the front focal plane of the second far field imaging lens 209, and the second energy sensor 210 is placed behind the second far field imaging lens 209. Focal plane.
  • the focal length of the two far field imaging lenses is the same, the distance from the beam shaping element 205 to the second energy sensor 210 is 4/, hence the name 4-/ optical path.
  • the position of the iris 208 is the same as the position of the CCD image sensor 207-2 in the A beam path, and the focal length of the first far field imaging lens 206 is also the same as in the A beam path.
  • the iris diaphragm 208 is opened to the size of the zero-order diffracted light (0.3 mm in this embodiment), and only the center beam is passed.
  • the laser beam reflected by the beam splitting mirror group 202 is reflected by the beam splitter 203 to measure the energy 4 of the incident beam by the first energy sensor 204.
  • the transmitted light beam transmitted through the beam splitter 203 is irradiated onto the beam shaping element 205, and sequentially passes through the first far field imaging lens 206, the iris diaphragm 208, and the second far field imaging lens 209 are followed by the second energy.
  • the sensor 210 measures the energy of the zero-order diffracted light in the center I 0o
  • A is the ultraviolet working wavelength
  • A' is the wavelength of visible light for measurement
  • sin is a sine function
  • is a mathematical constant.
  • the number of steps N is calculated by the above formula, and the number of steps N needs to be an integer, and is usually 2 n , for example, 2, 4, 8, and the like. In the present embodiment, the measurement is obtained. ' is 59.12%, and the formula is W is 8.
  • the iris 208 is opened such that the aperture is equal to the dimension D of the far field intensity distribution.
  • the input energy practitionerand the output energy 1! are simultaneously recorded by the first energy sensor 204 and the second energy sensor 210 respectively.
  • the beam shaping element 205 is typically utilized 7 _ f l sin ⁇ (lc/Z>) 2
  • N is the number of steps of the beam shaping element
  • clb .
  • the number of steps T is 8
  • the energy utilization ratio of the beam shaping element at the ultraviolet operating wavelength is obtained.
  • the test wavelength should be selected in accordance with the following principles:
  • the present invention is characterized in that: the visible laser is used to measure the optical performance of the beam shaping element in the ultraviolet lithography machine, including the far field intensity distribution and the energy utilization rate, and the optical performance detecting device of the beam shaping element of the present invention has a cost. Low, easy to make, fast measurement.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Lenses (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
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Abstract

提供一种用于紫外光刻机的光束整形元件的光学性能的检测装置。该装置包括:可见激光器(201);在可见激光器输出激光的方向同光轴地依次排列的扩束镜组(202)、分束镜(203)、第一远场成像透镜(206)、可调光阑(208)或CCD图像传感器(207-2)、第二远场成像透镜(209)、和第二能量传感器(210)。还提供一种用于紫外光刻机的光束整形元件的光学性能的检测方法。该装置适用于任何紫外波段的光束整形元件的光学性能检测。该装置成本低、使用简便、和测量快速。

Description

光束整形元件光学性能的检测装置和检测方法 技术领域
本发明属于微光刻领域, 特别是一种用于紫外光刻机照明系统中的 光束整形元件光学性能的检测装置和检测方法。 背景技术
在先进光刻机的照明系统中,通常采用光束整形元件实现离轴照明, 增强光刻系统分辨率, 增大焦深, 并改善光刻对比度, 从而提高光刻质 光刻系统的分辨率是指光刻机能够在硅片面上加工的最小线宽, 它 同光源的波长成正比, 现有光刻机主要采用紫外或深紫外激光器(紫外 波段: 汞灯 i线波长为 365nm; 深紫外波段: 氟化氩 ArF激光器波长为 193 nm、 氟化氪 KrF激光器波长为 248 nm。 全文中为了简化用 "紫外" 代替"紫外或深紫外")作为光源, 因为紫外光源波长短, 有利于减小特 征线宽尺寸, 提高器件(如中央处理器 CPU、 内存等) 的集成度。 依据 上述照明光源的波长选择, 照明系统中的光束整形元件也工作在紫外波 段。
为了实现精确的离轴照明模式和较高的能量利用率, 光束整形元件 通常采用衍射光学的方法实现。 将光束整形元件安装到照明系统之前, 必须对其光学性能进行检测。 设计制造的光束整形元件除了实现离轴照 明的功能外, 还需要具有尽可能高的能量利用率, 减小照明模式转换时 的能量损失。 因此, 对于光束整形元件的光学性能检测主要包括远场光 强分布和能量利用率的测量。
传统检测方案中, 需要使用与光束整形元件相同工作波长的紫外激 光器、 紫外 CCD 图像传感器以及紫外能量传感器构建测试系统 [参见 John E Childers, Tom Baker, Tim Emig, James Carriere, Marc D. Himel, Proc. of SPIE Vol. 7430, 74300S, 2009]。 测量时需将光束整形元件的出射 光束在远场处 (远场成像透镜的焦平面) 成像于紫外 CCD 图像传感器 测量远场光强分布, 或者会聚到紫外能量传感器中进行能量利用率的测 量。 上述在先技术的主要缺点是, 测试系统需在紫外工作波长下工作, 光路调整不方便; 测试系统所需的紫外激光器、 紫外 CCD 图像传感器 以及紫外能量传感器的价格比较昂贵; 紫外激光器工作中使用的含氟混 合气体具有较强的腐蚀性和毒性; 紫外激光由于不能直接被人眼观察, 给系统光路的对准和调试带来不便。 发明内容
本发明的目的在于克服上述在先技术的不足, 提供一种用于紫外光 刻机的光束整形元件的检测装置和检测方法, 该装置和方法适用于任何 紫外波段的光束整形元件的光学性能检测,而且具有成本低,使用简便, 测量快速的特点。
本发明的技术解决方案如下:
一种用于紫外光刻机的光束整形元件的光学性能的检测装置, 特点 在于其构成包括可见激光器, 在该可见激光器输出激光的方向同光轴地 依次设有扩束镜组、 分束镜、 第一远场成像透镜、 可调光阑、 第二远场 成像透镜和第二能量传感器;
所述的分束镜与所述的光轴成 45°设置, 在该分束镜的反射光方向 设有第一能量传感器;
待测光束整形元件位于所述的第一远场成像透镜的物方焦面, 所述 的第一远场成像透镜、 第二远场成像透镜的焦距均为 f, 第一远场成像 透镜和第二远场成像透镜)之间的距离为 2f, 所述的第二能量传感器位 于所述的第二远场成像透镜的像方焦面;
在所述的第一远场成像透镜和第二远场成像透镜的共焦面设置所述 的可调光阑, 或设置 CCD图像传感器, 该 CCD图像传感器的感光面的 中心具有中心遮拦。
所述的第一远场成像透镜的物方焦面设有供待测光束整形元件设 置的调整架。
在所述的第一远场成像透镜和第二远场成像透镜的共焦面位置设有 供具有中心遮拦的 CCD 图像传感器和可调光阑互换的互换机构, 当该 互换机构换位时, 所述的可调光阑和所述的 CCD 图像传感器换位并且 其中心均置于光路中的光轴上。
所述的分束镜为半透半反镜。
一种利用上述光束整形元件的光学性能的检测装置进行检测的方 法, 包括下列步骤:
1 )远场光强分布的检测:
①将所述的 CCD图像传感器置于光路中;
②开启可见激光器, 调整扩束准直镜组, 将可见激光器发出的可见 激光束扩束与待测的光束整形元件的通光口径相同, 再让被方孔光阑截 取的光束通过所述的分束镜, 分为反射光束和透射光束, 该透射光束照 射在待测光束整形元件上, 由所述的 CCD 图像传感器探测, 获得远场 光强分布尺寸 D ,;
D' = 2Vf /d
其中: /为第一远场成像透镜的焦距, ^为光束整形元件台阶的横向 尺寸, 是可见激光波长;
③对应于紫外波长 A的远场光强分布尺寸 D=D'A/ i'; ①用可见波长为 A'的激光测量零级衍射效率 :
将可调光阑的通光口径调小, 仅让中心零级光束通过, 用第二能量 传感器测量得到零级光强 I 用第一能量传感器测量得到入射光强 Iin, 利用下列公式计算待测光束整形元件的台阶数
„ ,— , ' / , _ Γ 1 sinjnc /b) l2
Ν sin(^c / oiv)
其中: cib= 、 ;1是紫外工作波长;
②测量波长 i'下的 +1级衍射效率 ^ ';
将所述的可调光阑的通光口径调大至等于远场光强分布的尺寸
D,, 分别用第一能量传感器和第二能量传感器同时记录下输入能量 „ 和输出能量总光强 /0+/, 利用下列公式计算 +1级衍射效率:
Figure imgf000006_0001
③再利用下列公式计算待测光束整形元件在紫外波长 A下的能 量利用率
Ί = 1 sin^-(l- c/6) 2
1 1 ~ N sin [; r(l - c/6)/N] 。
与在先技术相比, 本发明具有下列技术成果:
1、本发明利用可见光对紫外光刻照明系统中光束整形元件的光学性 能进行测量, 包括远场光强分布和能量利用率, 装置中用到的激光器、 CCD图像传感器和能量传感器均工作在可见光波段,价格远低于紫外波 段的上述设备, 且在可见光波段光路调试方便且安全。
2、本发明可以适用于任何紫外波段光束整形器的光学性能检测,而 不局限在某一个波长下。而且具有成本低, 使用简便,测量快速的特点。 附图说明
图 1是仿真结果: 同一光束整形元件在两个不同波长下远场光强分 布的示意图。
图 2是本发明光束整形元件的光学性能检测装置示意图。 具体实施方式
下面结合附图和实例对本发明作进一步的说明, 但不应以此限制本 发明的保护范围。 '
先请参阅图 1, 图 1中以紫外光刻机中光束整形元件产生的环形远 场光强分布为例。 根据仿真的结果, 在照射光源波长改变后, 远场光强 分布发生变化。 101为设计的光束整形元件在 A=248 nm时的远场光强分 布, 该分布为环形照明, 外径为 20 mm, 光束整形元件的通光尺寸为 10 mmxlO mm。通过计算机仿真发现当入射光波长变为 AHVU (M>1)后, 远场光强分布 (102)的尺寸扩大至原先的 M倍, 但形状几乎不变, 中心 出现较强的光点。
根据弗朗和费衍射定理, 如果忽略折射率在不同波长下的变化(通 常这种变化较小),远场光强分布的尺寸 D同波长 1成正比 [郁道银,谈 恒英, 工程光学(第二版), 机械工业出版社, 2005年, 第 345页]:
D = 2 f /d
其中: /为远场成像透镜的焦距, ^为光束整形元件中台阶的横向尺 寸。 从(1 )式中可以看出当波长变化时, 远场分布尺寸 出现同比例 变化。
仿真结果和理论分析表明, 通过改变激光波长对光束整形元件的光 学性能测量是可行的。这是本发明的基本原理。按照本发明方法测量时, 需要挡住中心亮斑(该亮斑通常能量较强, 会引起 CCD饱和和损坏), 然后用 CCD图像传感器测量出远场光强分布。最后,按照 AW的比例缩 小后, 即可以得到紫外工作波长下的远场光强分布, 其中 I'是测量用的 可见光的波长, A是紫外工作波长。 测量所述的能量利用率时所用到的计算公式推导过程如下: 光束整形元件通常是衍射光学元件, 是由多组台阶状浮雕构成的位 相光栅, 各级衍射谱的强度分布为 [郁道银, 谈恒英, 工程光学 (第二 版), 机械工业出版社, 2005年, 第 366页]:
Figure imgf000008_0001
其中: ^为照明光的振幅, 是衍射级次, 4是 «级衍射级次的光 强, W代表台阶数, A为最大的台阶高度, A是入射激光的波长, 《是材 料在波长 1下的折射率。
该公式表明当入射激光的波长发生变化, 各衍射级次的光强会相应 地变化。 通常光束整形元件按照 2π位相差的设计方式, 即; z= i/(«-l), λ 是光束整形元件的工作波长, 但是实际加工过程中由于存在加工误差使 得台阶高度 /2存在一定的微小偏差 ί/ί。对于光束整形元件来说,被利用 的能量主要集中于 +1级衍射, 即 /71=1。
依据上述公式, 在工作波长 Α下, 能量利用率表示式为:
7 . T rs ( lN) sin^ & ,2
^ = V4 = [ / ¾nJ
π si · , ,
n (^& I N)
在检测波长 l'下, 能量利用率表达式为:
1 m π sin [ τ(1 - c/b + c)/N]
其中, b=Ah n-V)/ λ, c=Ah{n'-\)l λ «'为波长 Α'时材料的折射率, 假 定 将上述两式相除,并且考虑到加工误差 远小于波长 I和 A', b和 C是趋近于零的小量, 化简后可用得到相对能量利用率:
1 N sin[^(l -c/b)/N]
其中, db= , 是光束整形元件的台阶数。 台阶数是光束整形元 件中位相 0~2π的均分个数。 所述的台阶数可以通过零级衍射效率得到, 在测量波长 l'下, 零级衍射效率为:
„ , _ τ , , τ 一 Γ 1 sin(^ /6) ί2
Ν smijtc I οΝ)
图 2是本发明光束整形元件的光学性能检测装置示意图。由图可见, 本发明用于紫外光刻机的光束整形元件的光学性能的检测装置的构成包 括可见激光器 201, 在该可见激光器 201输出激光的方向同光轴地依次 设有扩束镜组 202、分束镜 203、第一远场成像透镜 206、可调光阑 208、 第二远场成像透镜 209和第二能量传感器 210;
所述的分束镜 203与所述的光轴成 45°设置, 在该分束镜 203的反 射光方向设有第一能量传感器 204;
待测光束整形元件 205位于所述的第一远场成像透镜 206的物方焦 面,所述的第一远场成像透镜 206、第二远场成像透镜 209的焦距均为 f, 第一远场成像透镜 206和第二远场成像透镜 209之间的距离为 2f, 所述 的第二能量传感器 210位于所述的第二远场成像透镜 209的像方焦面; 在所述的第一远场成像透镜 206和第二远场成像透镜 209的共焦面 设置所述的可调光阑 208,或设置 CCD图像传感器 207-2,该 CCD图像 传感器 207-2的感光面的中心具有中心遮拦 207-1。
所述的第一远场成像透镜 206 的物方焦面设有供待测光束整形元 件 205设置的调整架。
在所述的第一远场成像透镜 206和第二远场成像透镜 209的共焦面 位置设有供具有中心遮拦 207-1的 CCD图像传感器 207-2和可调光阑 208互换的互换机构, 当该互换机构换位时, 所述的可调光阑 208和所 述的 CCD图像传感器 207-2换位, 并且其中心均置于光路中的光轴上。
下面给出一个具体实施例, 详细介绍整个检测装置的器件构成、 光 路结构以及测量方法。
首先,选用可见波长激光器 201,例如波长 632.8 nm的氦氖激光器。 其输出光束的直径约为 0.5 mm, 需要在其后放入扩束准直镜组 202, 将 激光扩束到至少等于光束整形元件 205的通光口径 14.14 mm (即对角线 尺寸 =10 mmx V2 ),再用方孔光阑截取 10 mmxlO mm的光束照射在光束 整形器 205上。 分束镜 203采用半透半反镜, 将一半的激光能量反射到 输入端第一能量传感器上 204, 输入端第一能量传感器 204的口径需要 大于 14.14 mm, 另一半能量的激光垂直照射在光束整形元件 205上。上 述光路是共用光路, 后续光路分为两种情况: A光路用于测量远场光强 分布, B光路用于测量能量利用率, 下面分别陈述。
在 A光路中采用 2-/的光路布置测量光束整形元件的远场光强分布。 光束整形元件 205位于第一远场成像透镜 206的前焦面, CCD图像传感 器 207-2位于第一远场成像透镜 206的后焦面,构成 2-/的光路布置。为 了确保远场像能够完全被 CCD图像传感器 207-2接收,第一远场成像透 镜 206的焦距 /应根据 CCD图像传感器 207-2中 CCD的尺寸选取, 依 据是:
/ < //2NA
其中: /为 CCD的尺寸, NA是光束整形元件 205的输出数值孔径。 另外, 根据衍射定律, NA与光束整形元件 205的台阶横向尺寸^ /和激 光波长 1有关, 计算公式为:
Figure imgf000010_0001
综合上述两个公式, 第一远场成像透镜 206 的焦距 /应满足:
f < l - d/2A
在本实例中, CCD尺寸 /选取 12 mm, 激光波长为 632.8 nm, 台阶 的横向尺寸 d为 5 μπι, 因此 /可以选用 40 mm。
在图 2中, CCD图像传感器 207-2的前端靠近 CCD的位置应放置 中心遮拦 207-1 以阻挡中心光斑。 中心遮拦 207-1与 CCD图像传感器 207-2中成像面积之比值应小于 0.05, 在本实施例中, 选用 0.5 mm直径 的圆形中心遮拦。
光束整形元件的测量过程如下:
①利用所述的置换机构将所述的中心遮拦、 CCD图像传感器置于光 路中;
②开启可见波长激光器, 调整扩束准直镜组, 将可见波长激光束扩 束到待测的光束整形元件的通光口径 14.14 mm (即对角线尺寸 =10 mmx V2 ), 再用方孔光阑截取 10 mmxlO mm方形的光束, 通过所述的 分束镜 203分为反射光束和透射光束, 该透射光束照射在待测的光束整 形元件 205上, 由所述的 CCD图像传感器 207-2探测;
③将测量得到的远场光强分布按照尺寸比例 λ'Ιλ缩小, 本实施例该 比例为 2.55倍, 缩小后的光强分布即为紫外工作波长下的光强分布。
图 2中 B光路用于测量光束整形元件 205的能量利用率。在 B光路 中采用 4-/的光路布置, 即用第一远场成像透镜 206和第二远场成像透 镜 209放于光路中, 将光束整形元件 205放于第一远场成像透镜 206的 前焦面, 可变光阑 208放在第一远场成像透镜 206的后焦面和第二远场 成像透镜 209的前焦面,第二能量传感器 210放于第二远场成像透镜 209 的后焦面。 两块远场成像透镜的焦距 /相同, 从光束整形元件 205到第 二能量传感器 210的距离为 4/, 因此称为 4-/光路。 可变光阑 208的位 置同 A光路中 CCD图像传感器 207-2的位置相同, 第一远场成像透镜 206的焦距 /也与 A光路中的相同。
能量利用率的测量过程如下:
①利用所述的置换机构将所述的可调光阑 208置于光路中;
②开启可见波长激光器 201,调整扩束准直镜组 202,将可见波长激 光束扩束到待测的光束整形元件的通光口径 14.14 mm (即对角线尺寸 =10 mmx V2 ),再用方孔光阑截取 10 mmxlO mm的光束,通过所述的分 束镜 203分为反射光束和透射光束, 该透射光束照射在待测光束整形元 件 205上;
①测量中心零级衍射光的衍射效率:
将可变光阑 208开至零级衍射光的尺寸 (本实施例为 0.3mm), 仅 让中心光束通过。 经扩束镜组 202出射的光束经所述的分束镜 203反射 的激光束由所述的第一能量传感器 204测量入射光束的能量 4。 透过所 述的分束镜 203的透射光束, 照射在光束整形元件 205上, 再依次经过 第一远场成像透镜 206,可变光阑 208、第二远场成像透镜 209后由第二 能量传感器 210测量中心零级衍射光的能量 I0o 中心零级衍射光的衍射 效率为: "0、= n
④运用下面的公式计算光束整形元件的台阶数 N:
„ ,— , '〃 _ { _ smjnc / b) 2
'/ο ' -Ό ' 1 m ― T~. 77 7 J
N s (7tc I oN)
其中: clb= 、 A是紫外工作波长, A'是测量用的可见光的波长, sin 是正弦函数, π是数学常数。 在本实施例中
Figure imgf000012_0001
nm, 所 以 c/6=0.3919。 利用上述公式计算台阶数 N, 台阶数 N需为整数, 并且 通常是 2n, 例如 2、 4、 8等。 在本实施例中, 测量得到 /。'为 59.12%, 通过公式求得 W为 8。
⑤在可见光波长下, 测量 +1级衍射效率即能量利用率:
将可变光阑 208打开, 使得口径等于远场光强分布的尺寸 D。 依照 所述中心零级衍射光的衍射效率的测量方法, 分别用第一能量传感器 204和第二能量传感器 210同时记录下输入能量 „和输出能量 1!。 可见 光波长下的能量利用率 - Io)l Iin。 光束整形元件 205通常是利用其 7 _f l sin^(l-c/Z>) 2
1 1 N sin[^(l-c/6)/N]
其中, N是所述光束整形元件的台阶数, clb= 、。 在本实施例中, 当台阶个数 T为 8,
Figure imgf000013_0001
结合所述的步骤⑤测量的可见光波长 下的能量利用率 ^和上述公式,求得光束整形元件在紫外工作波长下的 能量利用率^ 。
测试波长的选取应遵循以下原则: 测试波长 总是大于紫外工作波 长 且波长比 Ι'/λ不应太大, 最好介于 2〜4之间。 因为通过公式(5) 计算当 '/1=4时, ^'Λ/ Ο.Ο^ 两波长下的能量利用率相差超过 10倍, 测量的可靠性接近极限。
与先技术比较, 本发明的特点在于: 采用可见激光测量紫外光刻机 中光束整形元件的光学性能, 包括远场光强分布和能量利用率, 本发明 光束整形元件的光学性能检测装置具有成本低, 使甩简便, 测量快速的 特点。

Claims

权 利 要 求
1、一种用于紫外光刻机的光束整形元件的光学性能的检测装置,特 征在于其构成包括可见激光器(201 ), 在该可见激光器(201 )输出激光 的方向同光轴地依次设有扩束镜组(202)、 分束镜(203)、 第一远场成 像透镜(206)、可调光阑(208)、第二远场成像透镜(209)和第二能量 传感器 (210);
所述的分束镜(203 )与所述的光轴成 45°设置, 在该分束镜(203 ) 的反射光方向设有第一能量传感器(204);
待测光束整形元件(205 )位于所述的第一远场成像透镜(206) 的 物方焦面, 所述的第一远场成像透镜(206)、 第二远场成像透镜(209) 的焦距均为 f, 第一远场成像透镜(206)和第二远场成像透镜 (209) 之间的距离为 2f, 所述的第二能量传感器(210)位于所述的第二远场 成像透镜(209) 的像方焦面;
在所述的第一远场成像透镜(206)和第二远场成像透镜(209) 的 共焦面设置所述的可调光阑 (208), 或设置 CCD图像传感器(207-2), 该 CCD图像传感器(207-2) 的感光面的中心具有中心遮拦(207-1 )。
2、 根据权利要求 1所述的光束整形元件的光学性能的检测装置, 其特征在于所述的第一远场成像透镜 (206)的物方焦面设有供待测光束 整形元件(205 ) 设置的调整架。
3、根据权利要求 1所述的光束整形元件的光学性能的检测装置,其 特征是在所述的第一远场成像透镜 (206)和第二远场成像透镜 (209) 的共焦面位置设有供具有中心遮拦(207-1 )的 CCD图像传感器(207-2) 和可调光阑(208)互换的互换机构, 当该互换机构换位时, 所述的可调 光阑(208)和所述的 CCD图像传感器(207-2)换位, 并且其中心均置 于光路中的光轴上。
4、根据权利要求 1所述的光束整形元件的光学性能的检测装置,其 特征在于所述的分束镜 (203)为半透半反镜。
5、一种利用权利要求 1所述的光束整形元件的光学性能的检测装置 进行检测的方法, 其特征在于包括下列步骤:
1 )远场光强分布的检测:
①将所述的 CCD图像传感器(207-2)置于光路中;
②开启可见激光器 (201), 调整扩束准直镜组 (202), 将可见激光器 (201)发出的可见激光束扩束与待测的光束整形元件 (205)的通光口径相 同, 再让被方孔光阑截取的光束通过所述的分束镜(203), 分为反射光 束和透射光束, 该透射光束照射在待测光束整形元件(205)上, 由所述 的 CCD图像传感器 (207-2)探测, 获得远场光强分布尺寸 D ';
D、 = 7 、f ld
其中: /为第一远场成像透镜(206)的焦距, ^为光束整形元件(205) 台阶的横向尺寸, T是可见激光波长;
③对应于紫外波长 I的远场光强分布尺寸 D=DVI/ L' ;
2) 能量利用率的检测:
②用可见波长为 A'的激光测量零级衍射效率
将可调光阑(208)的通光口径调小, 仅让中心零级光束通过, 用第 二能量传感器 (210)测量得到零级光强 /0', 用第一能量传感器(204) 测量得到入射光强 Iin, 利用下列公式计算待测光束整形元件(205) 的 台阶数 N;
Figure imgf000015_0001
其中: clb=XIX A是紫外工作波长;
③再测量波长 I'下的 +1级衍射效率 将所述的可调光阑(208)的通光口径调大至等于远场光强分布的尺 寸 , 分别用第一能量传感器(204)和第二能量传感器(210)同时 记录下输入能量 和输出能量总光强 /0+/,利用下列公式计算 +1级衍射 效率:
③再利用下列公式计算待测光束整形元件(205)在紫外波长
Figure imgf000016_0001
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