WO2013107832A3 - A method and apparatus for driving half bridge connected semiconductor power switches with a stable and extremely short interlock delay combined with a switching transition speed increase and a driving power consumption reduction - Google Patents

A method and apparatus for driving half bridge connected semiconductor power switches with a stable and extremely short interlock delay combined with a switching transition speed increase and a driving power consumption reduction Download PDF

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Publication number
WO2013107832A3
WO2013107832A3 PCT/EP2013/050869 EP2013050869W WO2013107832A3 WO 2013107832 A3 WO2013107832 A3 WO 2013107832A3 EP 2013050869 W EP2013050869 W EP 2013050869W WO 2013107832 A3 WO2013107832 A3 WO 2013107832A3
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WO
WIPO (PCT)
Prior art keywords
driving
power switches
half bridge
stable
bridge connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2013/050869
Other languages
French (fr)
Other versions
WO2013107832A2 (en
Inventor
Franc Zajc
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Individual
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Individual
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Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to EP13700344.8A priority Critical patent/EP2805418B1/en
Priority to CN201380014852.XA priority patent/CN104170256B/en
Priority to JP2014552625A priority patent/JP6431768B2/en
Priority to US14/372,720 priority patent/US9496857B2/en
Publication of WO2013107832A2 publication Critical patent/WO2013107832A2/en
Publication of WO2013107832A3 publication Critical patent/WO2013107832A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
    • H03K4/60—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor
    • H03K4/62—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device
    • H03K4/625—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device using pulse-modulation techniques for the generation of the sawtooth wave, e.g. class D, switched mode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
    • H03K4/60—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor
    • H03K4/62—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device
    • H03K4/64—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device combined with means for generating the driving pulses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/90—Linearisation of ramp; Synchronisation of pulses

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Dc-Dc Converters (AREA)
  • Inverter Devices (AREA)

Abstract

A driving circuit for driving half bridge connected electrically controlled power switches with a near zero interlock delay time between on-states of the power switches, wherein the driving circuit is configured to receive an input signal and to generate: - a first drive signal being adapted to switch a first power switch between the on and off state, - a second drive signal being adapted to switch a second power switch between the on and off state, wherein the signal curve of the first drive signal generated in response to a rising and falling edge of said input signal is mirrored with respect to the signal curve of the second drive signal along a time axis of a mirroring voltage value within a transition time, wherein the mirroring voltage value is adjusted such to be within the cutoff region of the power switches.
PCT/EP2013/050869 2012-01-17 2013-01-17 A method and apparatus for driving half bridge connected semiconductor power switches with a stable and extremely short interlock delay combined with a switching transition speed increase and a driving power consumption reduction Ceased WO2013107832A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP13700344.8A EP2805418B1 (en) 2012-01-17 2013-01-17 A method and apparatus for driving half bridge connected semiconductor power switches with a stable and extremely short interlock delay combined with a switching transition speed increase and a driving power consumption reduction
CN201380014852.XA CN104170256B (en) 2012-01-17 2013-01-17 Method for driving half-bridge semiconductor power switch and driving circuit
JP2014552625A JP6431768B2 (en) 2012-01-17 2013-01-17 Method and apparatus for driving a half-bridge connected semiconductor power switch having a stable and extremely short interlock delay to improve switch transition speed and reduce drive power consumption
US14/372,720 US9496857B2 (en) 2012-01-17 2013-01-17 Method and apparatus for driving half bridge connected semiconductor power switches with a stable and extremely short interlock delay combined with a switching transition speed increase and a driving power consumption reduction

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/351,618 2012-01-17
US13/351,618 US8829949B2 (en) 2012-01-17 2012-01-17 Method and apparatus for driving a voltage controlled power switch device
EP12151561.3 2012-01-18
EP12151561.3A EP2618486B1 (en) 2012-01-17 2012-01-18 A method and apparatus for driving a voltage controlled power switch device

Publications (2)

Publication Number Publication Date
WO2013107832A2 WO2013107832A2 (en) 2013-07-25
WO2013107832A3 true WO2013107832A3 (en) 2013-12-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/050869 Ceased WO2013107832A2 (en) 2012-01-17 2013-01-17 A method and apparatus for driving half bridge connected semiconductor power switches with a stable and extremely short interlock delay combined with a switching transition speed increase and a driving power consumption reduction

Country Status (5)

Country Link
US (2) US8829949B2 (en)
EP (2) EP2618486B1 (en)
JP (1) JP6431768B2 (en)
CN (1) CN104170256B (en)
WO (1) WO2013107832A2 (en)

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US8829949B2 (en) 2012-01-17 2014-09-09 Franc Zajc Method and apparatus for driving a voltage controlled power switch device
CN104716815B (en) * 2013-12-16 2018-09-04 台达电子企业管理（上海）有限公司 Power Circuit and Power System
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JP6993168B2 (en) * 2017-10-18 2022-01-13 株式会社ジャパンディスプレイ Display device and touch panel device
RU2666643C1 (en) * 2017-11-15 2018-09-11 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Unified radiation resistant module of the loads commutator of executive cascades of the automation devices
JP7395256B2 (en) * 2019-03-14 2023-12-11 株式会社東芝 Amplifier and transmitter
CN109921670B (en) * 2019-03-28 2021-01-19 苏州汇川联合动力系统有限公司 Inverter control method, inverter and readable storage medium
CN110868062B (en) * 2019-10-18 2020-11-27 珠海格力电器股份有限公司 Half-bridge driving circuit and control method thereof
CN112994447B (en) * 2019-12-13 2022-03-04 立锜科技股份有限公司 Power conversion circuit with low delay time and driving circuit therein
EP4122099A4 (en) * 2020-04-17 2024-04-10 Murata Manufacturing Co., Ltd. ISOLATED GATE DRIVER
CN112014708B (en) * 2020-07-27 2023-02-07 西安中车永电电气有限公司 SiC power device online junction temperature calculation method based on FPGA
US11374440B2 (en) * 2020-07-31 2022-06-28 Renesas Electronics America Inc. Wireless power charging
CN116264461A (en) * 2021-12-14 2023-06-16 德斯拜思有限公司 Electronic circuit devices for current distribution
JP7817695B2 (en) * 2022-02-22 2026-02-19 Ｎｅｃネットワーク・センサ株式会社 Semiconductor switching element drive circuit
CN114531013A (en) * 2022-03-14 2022-05-24 飞锃半导体（上海）有限公司 Power supply for SiC MOSFET drive circuit
CN117240238A (en) * 2022-06-08 2023-12-15 哈曼国际工业有限公司 Audio amplifier
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CN120262875B (en) * 2025-06-05 2025-09-02 深蓝汽车科技有限公司 Drive circuit, motor controller control method, device and vehicle

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Also Published As

Publication number Publication date
CN104170256A (en) 2014-11-26
EP2618486B1 (en) 2017-01-11
WO2013107832A2 (en) 2013-07-25
CN104170256B (en) 2018-02-23
EP2805418A2 (en) 2014-11-26
EP2618486A3 (en) 2013-12-04
JP6431768B2 (en) 2018-11-28
EP2805418B1 (en) 2018-09-12
US8829949B2 (en) 2014-09-09
US20150109033A1 (en) 2015-04-23
US9496857B2 (en) 2016-11-15
EP2618486A2 (en) 2013-07-24
JP2015509333A (en) 2015-03-26
US20130181748A1 (en) 2013-07-18

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