WO2014082567A1 - 单芯光收发器 - Google Patents

单芯光收发器 Download PDF

Info

Publication number
WO2014082567A1
WO2014082567A1 PCT/CN2013/087869 CN2013087869W WO2014082567A1 WO 2014082567 A1 WO2014082567 A1 WO 2014082567A1 CN 2013087869 W CN2013087869 W CN 2013087869W WO 2014082567 A1 WO2014082567 A1 WO 2014082567A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting element
optical transceiver
receiving
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/087869
Other languages
English (en)
French (fr)
Inventor
稻垣优人
铃木贵幸
胡国祥
郝为民
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NANJING GUANGLU ELECTRONICS CO LTD
China Electric Power Research Institute Co Ltd CEPRI
Hamamatsu Photonics KK
Original Assignee
NANJING GUANGLU ELECTRONICS CO LTD
China Electric Power Research Institute Co Ltd CEPRI
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NANJING GUANGLU ELECTRONICS CO LTD, China Electric Power Research Institute Co Ltd CEPRI, Hamamatsu Photonics KK filed Critical NANJING GUANGLU ELECTRONICS CO LTD
Priority to EP13859311.6A priority Critical patent/EP2927722B1/en
Priority to CN201380061934.XA priority patent/CN104813209B/zh
Priority to US14/647,222 priority patent/US9762327B2/en
Priority to JP2015540042A priority patent/JP6194364B2/ja
Publication of WO2014082567A1 publication Critical patent/WO2014082567A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/25—Arrangements specific to fibre transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H04B10/43—Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/572—Wavelength control

Definitions

  • This invention relates to optical transmission devices, and more particularly to a single core optical transceiver.
  • the transmitting side of the unit and the receiving side of the other device are connected by optical fibers
  • the receiving side of the unit and the transmitting side of the other unit are connected by optical fibers, so that a plurality of optical fibers are required. Therefore, from the viewpoint of simplification of the device configuration, for example, in Japan
  • the optical axis of the light-emitting element and the optical axis of the light-receiving element are coupled to a single fiber by using a demultiplexing filter.
  • a light-emitting portion and a light-receiving portion are respectively formed on the same substrate, and a light-emitting portion is disposed at a central portion of the substrate.
  • a light receiving unit is disposed annularly around the light emitting portion.
  • the light-emitting portion is located at the center of the substrate, and the light-receiving portion is disposed around the light-emitting portion. Therefore, the light-receiving portion cannot receive the light having the strongest light intensity in the light from the optical fiber. It is considered that sufficient light receiving sensitivity cannot be obtained. Further, since the light-emitting portion and the light-receiving portion are formed on the same substrate, there is a problem that the material is restricted.
  • the present invention has been made to solve the above problems, and an object of the invention is to provide an optical transceiver capable of sufficiently ensuring light receiving sensitivity in optical communication using a single optical fiber.
  • a single-core optical transceiver is an optical transceiver that receives a light-emitting signal via a single optical fiber, and includes a light-emitting element that transmits the optical signal, and a light-receiving element that receives the optical signal.
  • the light-emitting element is an LED including a sapphire substrate disposed on the light-receiving surface of the light-receiving element and disposed on the light-receiving surface, and a nitride semiconductor layer laminated on the sapphire substrate.
  • a sapphire substrate and a light-receiving surface are disposed coaxially on a light-receiving surface of a light-receiving element, and a nitride semiconductor layer is formed on the sapphire substrate to form an LED as a light-emitting element.
  • the light-receiving element and the light-emitting element are disposed coaxially, and can be coupled to a single optical fiber.
  • the substrate of the light-emitting element by using a sapphire substrate for the substrate of the light-emitting element, it is possible to pass the optical signal of the wavelength band having a small transmission loss of the optical fiber to the light-receiving surface of the light-receiving element through the sapphire substrate. Therefore, even if a light-emitting element is disposed on the light-receiving surface of the light-receiving element, It is also possible to receive an optical signal from the optical fiber over the entire light receiving surface, and it is possible to sufficiently improve the light receiving sensitivity.
  • the light-emitting element is fixed to the light-receiving surface of the light-receiving element via a resin having transparency with respect to an emission wavelength of the light-emitting element.
  • the resin is an epoxy resin or a silicone resin.
  • the light-emitting element is preferably fixed to the light-receiving surface of the light-receiving element via a resin having transparency with respect to the light-emitting wavelength of the light-emitting element. In this case, the light receiving sensitivity can be further sufficiently improved.
  • the negative electrode pad and the positive electrode pad of the light-emitting element are both disposed on the light-emitting surface side of the light-emitting element.
  • the optical signal transmitted from the light-emitting element has a wavelength in the range of 450 nm to 600 nm.
  • the wavelength of the optical signal transmitted by the light-emitting element is preferably 510 nm green light.
  • the light-receiving element may be connected between the positive and negative electrodes via a discharge switch, and when the light-emitting element is operated, the discharge switch is turned on, and when the light-receiving element is operated, the discharge switch is set For shutdown.
  • the negative end of the light receiving element may be connected to a reference potential via a discharge switch, and when the light emitting element operates, the discharge switch is turned on, and when the light receiving element operates, the discharge The switch is set to off.
  • the discharge switch is turned on, and when the light receiving element operates, the discharge The switch is set to off.
  • the single optical fiber is a plastic optical fiber.
  • the plastic fiber is matched with the green light, and in the optical communication, the light receiving sensitivity can be sufficiently ensured.
  • the invention has the advantages that the coaxial arrangement of the light-emitting element and the light-receiving element in the single-core optical transceiver of the invention enables the optical transceiver function to be realized by a single optical fiber; the "half-duplex" working mode is adopted, The single-core bidirectional optical communication function can be realized.
  • the sapphire substrate is selected as the substrate of the light-emitting element
  • the green light is selected as the transmission optical signal
  • the plastic optical fiber is selected as the optical transmission medium, so that the transmission loss of the optical fiber can be small, and the light-receiving sensitivity can be sufficiently improved. .
  • Fig. 1 is a schematic diagram of an optical communication system constructed using a single-core optical transceiver according to an embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view showing the structure of a single-core optical transceiver of the present invention.
  • FIG 3 is a plan view of a single core optical transceiver of the present invention.
  • Fig. 4 is a block diagram showing the components of the half-duplex communication function of the single-core optical transceiver of the present invention.
  • Figure 5 is a timing diagram of the optical transceiver without a control switch.
  • Figure 6 is a timing diagram of a half duplex communication mode of the single core optical transceiver of the present invention.
  • Figure 7 is a schematic block diagram of one mode of implementing a half-duplex communication function for a single core optical transceiver of the present invention.
  • Figure 8 is a schematic block diagram of another manner of implementing a half-duplex communication function for a single core optical transceiver of the present invention.
  • Fig. 9 is a chart showing a result of an effect confirmation experiment of the present invention.
  • FIG. 1 is a schematic diagram showing an optical communication system configured by using a single-core optical transceiver according to an embodiment of the present invention.
  • the optical communication system S is a one-core bidirectional system for connecting a pair of single-core optical transceivers 1 (1A, IB) with a single optical fiber 2, for example, in a local area network.
  • optical signals are transmitted and received by a half-duplex communication method in which the functions of the optical transceivers 1A, 1B are transmitted and received at different times.
  • the single-core optical transceiver 1 that transmits and receives optical signals is coupled to the optical fiber 2 via the lens 3 as shown in FIG.
  • a large-diameter plastic optical fiber having a core diameter of about 1 mm is used.
  • a light transmission loss of typically about 450 nm to 600 nm is 100 dB/km, and further has a characteristic of minimizing light transmission loss of about 500 nm to 550 nm, particularly near 510 nm.
  • the single-core optical transceiver 1 includes a light-receiving element 12 formed on the lead frame 11, and a light-emitting element 13 formed on the light-receiving element 12.
  • the light-receiving element 12 is, for example, a Si photodiode, which has a lead frame 11 as a positive electrode, and a p-type semiconductor layer, an n-type semiconductor layer, an insulating layer, and a through-insulating layer are sequentially laminated on the lead frame 11 to the n-type semiconductor layer.
  • the negative electrode pad 25 (see FIG. 3) is formed in a rectangular shape in a plan view.
  • a light receiving surface 12a having a substantially circular shape is provided on a surface opposite to the lead frame 11 of the light receiving element 12, and an optical signal having a wavelength of about 450 nm to 600 nm which is emitted from the side of the optical fiber 2 is received.
  • the light-emitting element 13 is, for example, an LED in which a nitride semiconductor layer 13a is laminated on a sapphire substrate 13b.
  • the sapphire substrate 13b is a substrate that is transparent to a wide range of wavelengths from near-ultraviolet to infrared light, and is disposed on the light-receiving surface 12a of the light-receiving element 12.
  • the light-emitting element 13 is formed by sequentially laminating a buffer layer, an n-type GaN cladding layer, an InGaN/GaN active layer, and a p-type GaN cladding layer as the nitride semiconductor layer 13a on the sapphire substrate 13b, and forming the matrix in a plan view. shape. Further, on the surface of the light-emitting element 13 opposite to the sapphire substrate 13b, a substantially rectangular light-emitting surface 13c is provided, and an optical signal having a wavelength of about 450 nm to 600 nm is emitted to the side of the optical fiber 2.
  • the light-emitting element 13 is formed sufficiently small with respect to the light-receiving surface 12a of the light-receiving element 12, and is disposed coaxially with the light-receiving surface 12a at a substantially central portion of the light-receiving surface 12a.
  • the light-emitting element 13 is made of a resin layer 14 that is transparent to the light-emitting wavelength of the light-emitting element 13, for example, an adhesive composed of an epoxy resin or a silicone resin. It is fixed to the light receiving element 12.
  • the central axes of the light receiving surface 12a and the light emitting surface 13c are adjusted so as to coincide with the optical axis of the optical fiber 2. Therefore, as shown in Fig. 2, the optical signal emitted from the light-emitting element 13 is coupled to the optical fiber 2 via the lens 3, and the optical signal emitted from the optical fiber 2 is coupled to the light-receiving element 12 via the lens 3.
  • the light-emitting element 13 is disposed on the light-receiving surface 12a of the light-receiving element 12, but in the light-emitting element 13, the thickness of the sapphire substrate 13b is at a thickness with respect to the thickness of the nitride semiconductor layer 13a. Dominance. Therefore, most of the light of the central portion of the optical signal emitted from the optical fiber 2 passes through the light-emitting element 13 and reaches the light-receiving element 12.
  • the negative electrode pad 21 connected to the n-type GaN cladding layer and the negative electrode pad 22 connected to the p-type GaN cladding layer are disposed on the light-emitting surface 13c side of the light-emitting element 13.
  • the negative electrode pad 21 and the positive electrode pad 22 are electrically connected to a predetermined circuit via wires 23, 24, respectively.
  • the negative electrode pad 25 of the light-receiving element 12 is disposed at a position that does not overlap the light-receiving surface 12a.
  • the negative electrode pad 25 is also electrically connected to a prescribed circuit via a wire 26.
  • the wire 23 connected to the negative electrode pad 21 and the wire 24 connected to the positive electrode pad 22 are positioned in front of the light receiving surface 12a to shield a part of the optical signal emitted from the optical fiber 2, but the wires 23, 24 are appropriately selected.
  • the diameter of the shielded wires 23, 24 is sufficiently small with respect to the light receiving surface 12a, whereby the influence on the light receiving sensitivity of the single-core optical transceiver 1 can be sufficiently suppressed.
  • the single-core optical transceiver 1 has a switch 31 for controlling the operation of the above-described light-emitting element 13 and light-receiving element 12.
  • the switch 31 is controlled by a switching signal of the control unit 32 provided outside the single-core optical transceiver 1.
  • the output of the light-receiving element 12 is at a low level to substantially operate the light-receiving element 12.
  • the light receiving element 12 receives light
  • the output of the light emitting element 13 is at a low level, and the operation of the light emitting element 13 is substantially stopped.
  • the drive signal is input to the LED, and the LED outputs the optical signal for communication with respect to the optical fiber.
  • the light emitted from the LED (communication optical signal) is emitted not only to the side of the optical fiber 2 but also to the side of the sapphire substrate.
  • the LEDs when they are coaxially arranged on the light-receiving surface of the PD as shown in FIG. 2, they are affected by the light emitted toward the substrate side of the LED.
  • the LED substrate is a light-absorbing material with respect to the light-emitting wavelength of the LED, or when an electrode is formed on the entire back surface side of the substrate, the LED is directed to the substrate. The light emitted from the side is absorbed by the substrate or reflected by the electrode covered on the back surface of the substrate without causing a large influence.
  • the nitride semiconductor is laminated on the sapphire substrate through which the emission wavelength of the LED is transmitted, and the electrode is not formed on the back side of the sapphire substrate, the light emitted from the LED and the light transmitted through the optical fiber have Since the same wavelength, the sapphire substrate is incident on the light-receiving surface of the PD located directly below, similarly to the light transmitted from the optical fiber. In the PD disposed directly under the LED, incident light generates electric charge inside the PD, and is output from the negative electrode of the PD as a photocurrent.
  • the switch 31 is controlled in accordance with the switching signal from the control unit to lower the output of the light receiving element in the transmission mode, thereby substantially stopping the operation of the light receiving element. Therefore, in the transmission mode, the signal is not output from the PD, thereby suppressing malfunction.
  • the positive and negative electrodes of the PD are connected via the discharge switch A.
  • the outgoing light from the LED on the PD is incident, and charges are generated inside the PD.
  • the PD operation in the transmission mode is stopped, and not only the signal is not output from the PD, but also the switch A between the positive and negative electrodes of the PD is turned on, and the positive and negative electrodes are connected to each other to become the ground potential. The charge generated in the PD is discharged.
  • the electric charge generated in the inside of the PD is maintained in the state of being stored in the PD (charging state), and when switching to the receiving mode, the stored electric charge leaks from the PD as a photocurrent, which causes a malfunction. Until the amount of charged electric charge that causes the malfunction is eliminated, the operation as the normal receiving mode cannot be performed, and therefore the period between the transmission mode and the reception mode becomes long.
  • the charge generated in the PD according to the illuminance of the LED is discharged while being generated, and is not stored (charged) inside the PD. Therefore, it is possible to quickly shift to the normal operation when switching to the reception mode.
  • the reception mode by turning off the switch A, the signal light transmitted from the optical fiber is incident on the PD as an incident light signal via the LED, and can be output as an electrical signal from the PD.
  • a discharge switch B for connecting the negative terminal of the PD to a reference potential of Vcc or the like is provided, and by turning on the switch B in the transmission mode, The negative electrode of the PD is connected to a reference potential of Vcc or the like, and the electric charge generated inside the PD can also be discharged.
  • the light emission according to the LED The charge generated in the PD is discharged while being generated, and is not stored (charged) inside the PD. Therefore, it is possible to quickly shift to the normal operation when switching to the reception mode.
  • the signal light transmitted from the optical fiber is incident on the PD as an incident light signal via the LED, and can be output as an electrical signal from the PD.
  • the sapphire substrate 13b is disposed coaxially with the light-receiving surface 12a on the light-receiving surface 12a of the light-receiving element 12, and the nitride semiconductor layer 13a is formed on the sapphire substrate 13b.
  • the LED of the light-emitting element 13 By arranging the light-receiving element 12 and the light-emitting element 13 coaxially as described above, it is possible to bond to the single optical fiber 2.
  • an optical signal of a wavelength band (e.g., 450 nm to 600 nm) having a small transmission loss of the optical fiber 2 passes through the sapphire substrate 13b and reaches the light-receiving surface 12a of the light-receiving element 12. Therefore, even if the light-emitting element 13 is disposed on the light-receiving surface 12a of the light-receiving element 12, the light from the central portion of the light having the strongest light intensity from the optical fiber 2 can be included, so that the light-receiving surface 12a can receive the optical fiber 2 from the entire light-receiving surface 12a.
  • the light signal can sufficiently improve the light receiving sensitivity.
  • the negative electrode pad 21 and the positive electrode pad 22 of the light-emitting element 13 are both disposed on the light-emitting surface 13c side of the light-emitting element 13.
  • the single-core optical transceiver 1 further includes a switch 31 for stopping the operation of the light-receiving element 12 when the light-emitting element 13 operates, and stopping the operation of the light-emitting element 13 when the light-receiving element 12 is operated.
  • a switch 31 for stopping the operation of the light-receiving element 12 when the light-emitting element 13 operates, and stopping the operation of the light-emitting element 13 when the light-receiving element 12 is operated.
  • the experiment is as follows: a single-core optical transceiver (embodiment) in which a green LED obtained by laminating a nitride semiconductor layer on a sapphire substrate is disposed on a light-receiving surface of a light-receiving element made of a Si photodiode, and An optical transceiver (comparative example) in which a red LED obtained by laminating a nitride semiconductor layer on a GaAs substrate is disposed on a light receiving surface of a light receiving element made of a Si photodiode, and the light receiving sensitivity and the maximum communication distance are evaluated for each sample. .
  • Si photodiodes having a light-receiving surface of 0.8 ⁇ were used.
  • the chip size of the green LED is 0.34 mmX. 0.35 mm (about 0.12 mm 2 )
  • the chip size of the red LED was 0.23 mm ⁇ 0.23 mm (about 0.053 mm 2 ). Therefore, in the case where the original area is 1, the exposed area of the light-receiving surface of the Si photodiode is about 0.76 in the embodiment, and is about 0.89 in the comparative example.
  • the light-receiving sensitivity of the green light (wavelength of about 510 nm) of the Si photodiode is reduced by about 0.7 dBm with respect to the light-receiving sensitivity of the red light (wavelength of about 650 nm), but the minimum receiving sensitivity of the optical transceiver is increased by about 0.3 dBm after the offset.
  • the transmission loss of red light is about 0.15 dB/m
  • the transmission loss for green light is relatively 0.09 dB/m. Therefore, in the case of using the same driving IC and signal processing IC, the maximum communication distance in the optical communication system is about 100 m in the comparative example, and can be increased to about 170 m in the embodiment.
  • the single core optical transceiver of the present invention is suitable for industrial applications.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Light Receiving Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

一种单芯光收发器（1），其是经由单一光纤（2）收发光信号的光收发器。该单芯光收发器（1）具备发送光信号的发光元件（13）以及接受光信号的受光元件（12）。发光元件（13）是包含在受光元件（12）的受光面（12a）上并与受光面（12a）同轴配置的蓝宝石基板（13b）、以及在蓝宝石基板（13b）上层叠的氮化物半导体层（13a）而构成的LED。通过在受光元件（12）的受光面（12a）上配置发光元件（13），能够在整个受光面（12a）接受来自于光纤（2）的光信号，从而提高受光灵敏度。

Description

单芯光收发器 技术领域
本发明涉及光传输器件， 尤其为一种单芯光收发器。
背景技术
在现有的光纤通信用的光收发器中， 由于用光纤连接本机的发送侧与 对方机器的接收侧， 用光纤连接本机的接收侧与对方机的发送侧， 因此需 要多个光纤。 因此， 从装置构成的简单化观点看， 例如在日本特开
2003-307656号公报所记载的光收发用模块中， 采用了通过使用分波滤波 器来将发光元件的光轴与受光元件的光轴结合于单一纤维的结构。 另外， 作为光纤侧的结构， 例如在日本特开平 10-200154号公报所记载的光半导 体元件中， 在同一基板上分别形成发光部和受光部， 在基板的中心部配置 有发光部， 并以围着发光部的方式环状地配置有受光部。
发明内容
然而， 在上述的专利文献 2那样的结构中， 发光部位于基板的中 心， 在其周围配置受光部， 因而在受光部不能接收来自于光纤的光中光强度最 强的中心部分的光， 可以认为不能得到充分的受光灵敏度。 另外， 由于在 同一基板上形成发光部和受光部， 因此也有材料受到限制这样的问题。
本发明是为了解决上述问题而作出的，其目的在于提供一种使用了单 一的光纤的光通信中能够充分地确保受光灵敏度的光收发器。
为了解决上述问题，本发明所涉及的单芯光收发器是经由单一光纤而 收发光信号的光收发器， 具备发送所述光信号的发光元件、 以及接收所述 光信号的受光元件，所述发光元件是包含在所述受光元件的受光面上与该 受光面同轴配置的蓝宝石基板、 以及在所述蓝宝石基板上层叠的氮化物半 导体层而构成的 LED。在该单芯光收发器技术方案中，在受光元件的受光 面上将蓝宝石基板与受光面同轴配置，在该蓝宝石基板上形成氮化物半导 体层而构成成为发光元件的 LED。在该结构中，通过受光元件与发光元件 同轴配置， 可以与单一光纤结合。 另外， 通过对发光元件的基板使用蓝宝 石基板， 能够使光纤的传送损失小的波长带的光信号通过蓝宝石基板而到 达受光元件的受光面。 因此， 即使在受光元件的受光面上配置发光元件， 也能够在整个受光面接收来自于光纤的光信号， 能够充分地提高受光灵敏 度。
在上述单芯光收发器技术方案中，所述发光元件经由相对于该发光元 件的发光波长具有透明性的树脂而固定在所述受光元件的所述受光面上。 所述树脂为环氧类树脂或硅酮类树脂。 另外， 发光元件优选为经由相对于 该发光元件的发光波长具有透明性的树脂而固定在受光元件的受光面上。 这种情况下， 因此能够进一步充分提高受光灵敏度。
在上述单芯光收发器技术方案中，发光元件的负极电极垫和正极电极 垫均设置在发光元件的发光面侧。在该情况下， 不需要在发光元件的背面 (发光面的相反面）形成电极或配线等， 因而能够充分地确保蓝宝石基板 的光信号的透过区域。 因此， 能够进一步充分地提高受光灵敏度。
在上述单芯光收发器技术方案中，从所述发光元件发送的所述光信号 的波长范围为 450nm~600nm。 所述发光元件发送的所述光信号的波长优 先为 510nm绿光。 通过使用该波长带的光信号， 能够充分地确保蓝宝石 基板的透过率。 因此， 能够进一步充分地提高受光灵敏度。
在上述单芯光收发器技术方案中，还具备在所述发光元件工作时使所 述受光元件的工作停止、在所述受光元件工作时使所述发光元件的工作停 止的开关。 由此， 能够抑制发光元件的发光所引起的受光元件的噪音、 或 者受光元件受光时的漫反射所引起的不良情况。 另外， 可以设置为所述受 光元件正负极之间经由放电开关而连接， 在所述发光元件工作时， 所述放 电开关设为导通，在所述受光元件工作时，所述放电开关设为关断。或者， 也可设置为所述受光元件的负极端经由放电开关而连接至基准电位，在所 述发光元件工作时， 所述放电开关设为导通， 在所述受光元件工作时， 所 述放电开关设为关断。 由此， 能够在发送模式时， 对起因于发光元件所产 生的光而在受光元件内产生的电荷进行放电。 从而抑制了误动作， 并能够 在切换至接收模式时迅速地转移至通常动作。
在上述单芯光收发器技术方案中， 所述单一光纤为塑料光纤。 塑料光 纤与绿光相匹配， 在光通信中， 能够充分地确保受光灵敏度。
本发明的优点是，本发明单芯光收发器中的发光元件和受光元件的同 轴设置， 使得用单一光纤能够实现光收发功能； 采用 "半双工"工作模式， 能实现单芯双向光通信功能；另外，选择蓝宝石基板用作发光元件的基板， 选择绿光作为传输光信号， 选择塑料光纤作为光传输介质， 能够使光纤的 传送损失小、 充分地提高受光灵敏度。
附图说明
图 1是使用本发明的一个实施方式所涉及的单芯光收发器而构成的光 通信系统的示意图。
图 2是本发明单芯光收发器的结构剖面示意图。
图 3是本发明单芯光收发器的平面示意图。
图 4是本发明单芯光收发器的实现半双工通信功能的构成要素示意框 图。
图 5是光收发器没有控制开关情况下的时序图。
图 6是本发明单芯光收发器的半双工通信方式的时序图。
图 7是本发明单芯光收发器的实现半双工通信功能的一个方式的示意 框图。
图 8是本发明单芯光收发器的实现半双工通信功能的其他方式的示意 框图。
图 9是表示本发明的效果确认实验的结果列表图。
符号说明
1…单芯光收发器， 2…光纤， 3…透镜， 11…引线框， 12…受光元件， 12a…受光面， 13…发光元件， 13a…氮化物半导体层， 13b…蓝宝石基板， 13c…发光面， 14…树脂层， 21…负极电极垫， 22…正极电极垫， 23…导 线， 24…导线， 25…负极电极垫， 26…导线， 31…开关， 32…控制部。 具体实施方式
以下， 边参照附图， 边就本发明所涉及的单芯光收发器的优选实施方 式详细地进行说明。
图 1是表示使用本发明的一个实施方式所涉及的单芯光收发器而构成 的光通信系统的概要示意图。如该图所示， 光通信系统 S是用单一的光纤 2连接一对单芯光收发器 1 (1A、 IB)的、 例如在局域网使用的一芯双向系 统。 另外， 在光通信系统 S中， 通过光收发器 1A， 1B侧的功能， 以发送 与接收不同时工作的半双工通信方式实现光信号的收发。 进行光信号的收发的单芯光收发器 1， 如图 2所示， 经由透镜 3而结 合于光纤 2。对于光纤 2，例如使用芯径为 1mm左右的大口径的塑料光纤。 在塑料光纤中， 对典型地波长 450nm〜600nm 左右的光传送损失为 lOOdB/km, 进一步具有使 500nm~550nm左右的光、 特别是 510nm附近的 光传送损失最小的特性。
单芯光收发器 1具备形成在引线框 11上的受光元件 12、 形成在受光 元件 12上的发光元件 13而构成。 受光元件 12例如是 Si光电二极管， 其 通过将引线框 11作为正极电极， 在引线框 11上依次层叠 p型半导体层、 n型半导体层、 绝缘层、 以及贯通绝缘层而至 n型半导体层的负极电极垫 25 (参照图 3 )在俯视状态下形成矩形状。 另外， 在与受光元件 12中的引 线框 11相反侧的面， 设置有大致圆形状的受光面 12a，接收从光纤 2侧出 射的波长 450nm〜600nm左右的光信号。
另一方面，发光元件 13例如是在蓝宝石基板 13b上层叠氮化物半 导 体层 13a而成的 LED。蓝宝石基板 13b是对近紫外线至红外线光的宽范围 的波长具有透过性的基板， 其配置在受光元件 12的受光面 12a上。 发光 元件 13通过在该蓝宝石基板 13b上将缓冲层、 n型 GaN包覆层、InGaN/GaN 活性层、 以及 p型 GaN包覆层作为氮化物半导体层 13a依次层叠， 在俯 视状态下形成为矩形状。 另外， 在发光元件 13中的与蓝宝石基板 13b相 反侧的面， 设置有大致矩形状的发光面 13c， 将波长 450mn〜600nm左右 的光信号出射至光纤 2侧。
发光元件 13相对于受光元件 12的受光面 12a足够小地形成，在 受 光面 12a的大致中心部分与受光面 12a同轴配置。该发光元件 13，在使蓝 宝石基板 13b与受光面 12a相对的状态下， 经由相对于发光元件 13的发 光波长为透明的树脂层 14、例如由环氧类树脂或硅酮类树脂构成的粘着剂 而固定于受光元件 12上。 另外， 受光面 12a和发光面 13c的中心轴进行 调整， 使与光纤 2的光轴一致。 因此， 如图 2所示， 从发光元件 13出射 的光信号经由透镜 3而结合于光纤 2， 从光纤 2出射的光信号经由透镜 3 而结合于受光元件 12。
此时， 受光元件 12的受光面 12a上配置有发光元件 13， 但在发光元 件 13中， 蓝宝石基板 13b的厚度相对于氮化物半导体层 13a的厚度处于 支配地位。 因此， 从光纤 2出射的光信号的中心部分的光， 其大部分会通 过发光元件 13而到达受光元件 12。
另外， 发光元件 13的 p型 GaN包覆层与 n型 GaN包覆层的一部分 均在发光面 13c侧露出。 于是， 如图 3所示， 连接于 n型 GaN包覆层的 负极电极垫 21、以及连接于 p型 GaN包覆层的负极电极垫 22均配置在发 光元件 13的发光面 13c侧。 负极电极垫 21和正极电极垫 22分别经由导 线 23， 24而与规定的电路电连接。另外，在受光元件 12的受光面 12a侧， 在与受光面 12a不重叠的位置配置有受光元件 12的负极电极垫 25。 该负 极电极垫 25也经由导线 26与规定的电路电连接。
再有， 连接于负极电极垫 21的导线 23与连接于正极电极垫 22的导 线 24位于受光面 12a的前面而遮蔽了从光纤 2出射的光信号的一部分，但 适当地选择导线 23， 24的直径， 使被导线 23， 24遮蔽的面积相对于受光 面 12a足够地小， 由此能够充分地抑制对单芯光收发器 1的受光灵敏度的 影响。
此外， 如图 4所示， 单芯光收发器 1具有控制上述的发光元件 13和 受光元件 12的工作的开关 31。该开关 31受设置在单芯光收发器 1的外部 的控制部 32的切换信号控制， 在发光元件 13的光出射时， 受光元件 12 的输出为低电平而实质上使受光元件 12的工作停止，在受光元件 12受光 时， 发光元件 13的输出为低电平而实质上使发光元件 13的工作停止。 由 此， 在光通信系统 S中， 实现发送与接收不同时工作的半双工通信方式。
图 4的电路中， 在发送模式中， 发光元件 13 (LED)出射（发光）时， 实质上使受光元件 12 (PD) 的工作停止， 在接收模式中， 使 LED的工作 停止， 从而实现发送和接收不同时工作的半双工通信方式。 其时序图如图 6所示。
图 4的电路中， 如图 6的时序图那样动作。 发送模式时， 驱动用电信 号输入至 LED, 从 LED相对于光纤输出通信用的光信号。来自 LED的发 光 （通信用光信号） 不仅向光纤 2侧， 同时也向蓝宝石基板侧出射。
特别地， 如图 2那样， PD的受光面上同轴配置 LED的情况下， 受到 向 LED的基板侧出射的光的影响。 LED基板相对于 LED的发光波长为吸 光的材料， 或基板的背面侧整个面形成有电极的情况下， 从 LED 向基板 侧出射的光被基板吸收， 或由基板背面所覆盖的电极而反射， 不会造成大 的影响。
然而， 像本发明这样， 使 LED的发光波长透过的蓝宝石基板上层叠 有氮化物半导体，且蓝宝石基板的背面侧未形成有电极的情况下，从 LED 出射的光与通过光纤传输的光具有相同的波长，所以与从光纤传输的光相 同地， 透过蓝宝石基板， 入射至位于正下方的 PD的受光面。 配置于 LED 正下方的 PD中， 由入射的光在 PD内部产生电荷， 从 PD的负极作为光 电流而输出。
因此， 图 4的电路中， 没有开关 31 的情况下， 在发送模式时从 PD 输出信号 （图 5 )， 成为误动作的原因。
图 4的电路中， 根据来自控制部的切换信号， 控制开关 31而使发送 模式时受光元件的输出成为低电平， 从而在实质上停止受光元件的动作。 因此， 在发送模式下， 不从 PD输出信号， 从而抑制了误动作。
而且，在图 7的连接例中， PD的正负极之间经由放电开关 A而连接。 如上述那样， 在发送模式下， 在 PD上来自 LED的出射光被入射， 在 PD 内部产生电荷。 在该电路中， 发送模式时的 PD动作停止， 不仅从 PD不 输出信号， 而且通过将 PD的正负极之间的开关 A设为导通， 正负极之间 连接而成为接地电位， 对在 PD内产生的电荷进行放电。 此外， 在 PD内 部产生的电荷保持为存储于 PD 内部的状态 （充电的状态）， 在切换至接 收模式的情况下， 存储的电荷从 PD作为光电流而漏出， 成为误动作的原 因。 直至成为误动作的原因的被充电的电荷的量消失为止， 作为通常的接 收模式的动作不能进行， 因此发送模式和接收模式之间的期间变长。根据 图 7的电路， 根据 LED的发光在 PD内产生的电荷在产生的同时被放电， 不在 PD 内部存储 （充电）。 因此， 能够在切换至接收模式时迅速地转移 至通常动作。 接收模式期间， 通过将开关 A关断， 从光纤传输的信号光， 经由 LED作为入射光信号入射至 PD, 能够从 PD作为电气信号输出。
另外， 将 PD的图 7的开关 A替换为图 8的连接例中， 设置有用于将 PD的负极端连接于 Vcc等的基准电位的放电开关 B, 通过在发送模式时 使开关 B导通， 将 PD的负极连接于 Vcc等的基准电位， 在 PD内部产生 的电荷也可被放电。 根据这样的结构， 与图 7相同地， 根据 LED的发光 在 PD内产生的电荷在产生的同时被放电， 不在 PD内部存储（充电）。 因 此， 能够在切换至接收模式时迅速地转移至通常动作。 接收模式期间， 通 过将开关 B关断， 从光纤传输的信号光， 经由 LED作为入射光信号入射 至 PD, 能够从 PD作为电气信号输出。
如以上说明的， 在单芯光收发器 1 中， 在受光元件 12的受光面 12a 上将蓝宝石基板 13b与受光面 12a同轴配置， 在该蓝宝石基板 13b上形成 氮化物半导体层 13a而构成成为发光元件 13的 LED。 通过像这样受光元 件 12与发光元件 13配置在同轴上， 可以与单一的光纤 2结合。 另外， 通 过将蓝宝石基板 13b用于发光元件 13的基板， 使光纤 2的传送损失小的 波长带 （例如 450nm〜600nm) 的光信号通过蓝宝石基板 13b而到达受光 元件 12的受光面 12a。 因此， 即使在受光元件 12的受光面 12a上配置发 光元件 13， 也能够包含来自于光纤 2的光中光强度最强的中心部分的光， 从而能够在整个受光面 12a接收来自于光纤 2的光信号， 能够充分地提高 受光灵敏度。
另外， 在单芯光收发器 1中， 发光元件 13中的负极电极垫 21和正极 电极垫 22均设置在发光元件 13的发光面 13c侧。 由此， 由于没有必要在 发光元件 13 的背面形成电极或配线等， 因此， 能够充分地确保蓝宝石基 板 13b中的光信号的透光区域。因此，能够进一步充分地提高受光灵敏度。
另外， 单芯光收发器 1还具备在发光元件 13工作时使受光元件 12的 工作停止、在受光元件 12工作时使发光元件 13的工作停止的开关 31。由 此， 能够抑制发光元件 13的发光所引起的受光元件 12的噪声、 或者受光 元件 12受光时的漫反射所引起的不良情况。
接着， 就本发明的效果确认实验进行说明。
本实验如下： 分别制作将在蓝宝石基板上层叠氮化物半导体层而 得到的绿色 LED配置在由 Si光电二极管构成的受光元件的受光面上而构 成的单芯光收发器 （实施例）， 以及将在 GaAs 基板上层叠氮化物半导体 层而得到的红色 LED配置在由 Si光电二极管构成的受光元件的受光面上 而构成的光收发器（比较例）， 对各试样评价受光灵敏度和最大通信距离。
在实施例和比较例中，均使用了受光面为 0.8ιηιηΦ (约 0.5mm2) 的 Si光电二极管。 另外， 在实施例中， 绿色 LED 的芯片尺寸为 0.34mmX 0.35mm (约 0.12mm2)， 在比较例中， 红色 LED的芯片尺寸为 0.23mmX 0.23mm (约 0.053mm2)。 因此， Si光电二极管的受光面的露出面积， 在令 原面积为 1的情况下， 在实施例中约为 0.76， 在比较例中约为 0.89。
在该条件下， 对实施例和比较例测量 Si光电二极管的受光损失之后， 如图 7所示， 得到这样的结果： 在实施例约为 -1.5dBm， 与此相对， 在比 较例约为 -2.5 dBm，与 LED的芯片尺寸大无关，实施例的受光损失比比较 例的受光损失要小约 1.0dBm。 从该结果可以确认， 在实施例中， 来自于 光纤的光信号通过蓝宝石基板而到达受光元件的受光面， 能够在整个受光 面 12a接受来自于光纤 2的光信号。 此外， Si光电二极管的绿色光 (波长 约 510nm)的受光灵敏度相对于红色光 （波长约 650nm)的受光灵敏度降低 约 0.7dBm， 但作为光收发器的最小接收灵敏度， 相抵后提高约 0.3dBm。
另外， 在使用塑料光纤作为光纤的情况下， 红色光的传送损失约 0.15dB/m， 相对而言， 对于绿色光的传送损失约 0.09dB/m。 因此， 在使用 同等的驱动 IC和信号处理 IC的情况下，光通信系统中的最大通信距离相 对于在比较例中为 100m左右， 在实施例中可以提高至 170m左右。
工业应用性
本发明单芯光收发器适于工业应用。

Claims

权利要求
1. 一种单芯光收发器， 其特征在于，
是经由单一光纤而收发光信号的光收发器，
具备发送所述光信号的发光元件、 以及接收所述光信号的受光元 件，
所述发光元件是包含在所述受光元件的受光面上与该受光面同轴配 置的蓝宝石基板、 以及在所述蓝宝石基板上层叠的氮化物半导体层而构 成的 LED。
2. 根据权利要求 1所述的单芯光收发器， 其特征在于，
所述发光元件经由相对于该发光元件的发光波长具有透明性的树脂 而固定在所述受光元件的所述受光面上。
3. 根据权利要求 2所述的单芯光收发器， 其特征在于，
所述树脂为环氧类树脂或硅酮类树脂。
4. 根据权利要求 1或 2所述的单芯光收发器， 其特征在于， 所述发光元件的负极电极垫和正极电极垫均设置在所述发光元件的 发光面侧。
5. 根据权利要求 1或 2所述的单芯光收发器， 其特征在于， 从所述发光元件发送的所述光信号的波长范围为 450nm~600nm。
6. 根据权利要求 5所述的单芯光收发器， 其特征在于，
从所述发光元件发送的所述光信号的波长为 510nm。
7. 根据权利要求 1或 2所述的单芯光收发器， 其特征在于， 还具备在所述发光元件工作时使所述受光元件的工作停止、 在所述 受光元件工作时使所述发光元件的工作停止的开关。
8. 根据权利要求 7所述的单芯光收发器， 其特征在于， 所述受光元件正负极之间经由放电开关而连接， 在所述发光元件工 作时， 所述放电开关设为导通， 在所述受光元件工作时， 所述放电开关 设为关断。
9. 根据权利要求 7所述的单芯光收发器， 其特征在于，
所述受光元件的负极端经由放电开关而连接至基准电位， 在所述发 光元件工作时， 所述放电开关设为导通， 在所述受光元件工作时， 所述 放电开关设为关断。
10. 根据权利要求 1所述的单芯光收发器， 其特征在于，
所述单一光纤为塑料光纤。
PCT/CN2013/087869 2012-11-28 2013-11-26 单芯光收发器 Ceased WO2014082567A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP13859311.6A EP2927722B1 (en) 2012-11-28 2013-11-26 Single-core optical transceiver
CN201380061934.XA CN104813209B (zh) 2012-11-28 2013-11-26 单芯光收发器
US14/647,222 US9762327B2 (en) 2012-11-28 2013-11-26 Single-core optical transceiver
JP2015540042A JP6194364B2 (ja) 2012-11-28 2013-11-26 単芯光トランシーバ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210492427.9A CN103837945A (zh) 2012-11-28 2012-11-28 单芯光收发器
CN201210492427.9 2012-11-28

Publications (1)

Publication Number Publication Date
WO2014082567A1 true WO2014082567A1 (zh) 2014-06-05

Family

ID=50801638

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/087869 Ceased WO2014082567A1 (zh) 2012-11-28 2013-11-26 单芯光收发器

Country Status (5)

Country Link
US (1) US9762327B2 (zh)
EP (1) EP2927722B1 (zh)
JP (2) JP6194364B2 (zh)
CN (2) CN103837945A (zh)
WO (1) WO2014082567A1 (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103837945A (zh) * 2012-11-28 2014-06-04 浜松光子学株式会社 单芯光收发器
CN109219404B (zh) * 2016-04-01 2021-08-13 伊西康有限责任公司 具有能够围绕轴轴线选择性地旋转的外科端部执行器的可互换外科工具组件
JP7065033B2 (ja) * 2016-10-24 2022-05-11 ソニーセミコンダクタソリューションズ株式会社 光結合素子及び光通信システム
US11038591B2 (en) * 2019-06-28 2021-06-15 Rolls-Royce Corporation Optical interface and distributed fiber optic communication network for controlling a gas turbine engine and method
US11042025B2 (en) * 2019-09-20 2021-06-22 Raytheon Company Optical data communication using micro-electro-mechanical system (MEMS) micro-mirror arrays
US11539131B2 (en) 2020-08-24 2022-12-27 Raytheon Company Optical true time delay (TTD) device using microelectrical-mechanical system (MEMS) micromirror arrays (MMAS) that exhibit tip/tilt/piston (TTP) actuation
US11837840B2 (en) 2020-09-01 2023-12-05 Raytheon Company MEMS micro-mirror array laser beam steerer for simultaneous illumination of multiple tracked targets
US11815676B2 (en) 2020-09-17 2023-11-14 Raytheon Company Active pushbroom imaging system using a micro-electro-mechanical system (MEMS) micro-mirror array (MMA)
US11522331B2 (en) 2020-09-23 2022-12-06 Raytheon Company Coherent optical beam combination using micro-electro-mechanical system (MEMS) micro-mirror arrays (MMAs) that exhibit tip/tilt/piston (TTP) actuation
US12372658B2 (en) 2020-10-12 2025-07-29 Raytheon Company Negative obstacle detector using micro-electro-mechanical system (MEMS) micro-mirror array (MMA) beam steering
US11477350B2 (en) 2021-01-15 2022-10-18 Raytheon Company Active imaging using a micro-electro-mechanical system (MEMS) micro-mirror array (MMA)
US12066574B2 (en) 2021-01-15 2024-08-20 Raytheon Company Optical system for object detection and location using a Micro-Electro-Mechanical System (MEMS) Micro-Mirror Array (MMA) beamsteering device
US11550146B2 (en) 2021-01-19 2023-01-10 Raytheon Company Small angle optical beam steering using micro-electro-mechanical system (MEMS) micro-mirror arrays (MMAS)
US11835709B2 (en) 2021-02-09 2023-12-05 Raytheon Company Optical sensor with micro-electro-mechanical system (MEMS) micro-mirror array (MMA) steering of the optical transmit beam
US12372623B2 (en) 2021-02-17 2025-07-29 Raytheon Company Conic micro-electro-mechanical system (MEMS) micro-mirror array (MMA) steered active situational awareness sensor
US12025790B2 (en) 2021-02-17 2024-07-02 Raytheon Company Micro-electro-mechanical system (MEMS) micro-mirror array (MMA) and off-axis parabola (OAP) steered active situational awareness sensor
US11921284B2 (en) 2021-03-19 2024-03-05 Raytheon Company Optical zoom system using an adjustable reflective fresnel lens implemented with a micro-electro-mechanical system (MEMs) micro-mirror array (MMA)
US11483500B2 (en) 2021-03-24 2022-10-25 Raytheon Company Optical non-uniformity compensation (NUC) for passive imaging sensors using micro-electro-mechanical system (MEMS) micro-mirror arrays (MMAS)
US12130384B2 (en) 2021-03-30 2024-10-29 Raytheon Company Multiple field-of-view (FOV) optical sensor using a micro-electro-mechanical system (MEMS) micro- mirror array (MMA)
US12061334B2 (en) 2021-04-15 2024-08-13 Raytheon Company Optical scanning system using micro-electro-mechanical system (mems) micro-mirror arrays (MMAs)
US12360358B2 (en) 2021-04-22 2025-07-15 Raytheon Company Micro-electro-mechanical system (MEMS) micro-mirror array (MMA) steered high-power laser transmitter
US12117607B2 (en) 2021-04-28 2024-10-15 Raytheon Company Micro-electro-mechanical system (MEMS) micro-mirror array steered laser transmitter and situational awareness sensor with wavelength conversion
US12541098B2 (en) 2021-08-31 2026-02-03 Raytheon Company Amplified laser device using a MEMS MMA having tip, tilt and piston capability to both correct a beam profile and steer the amplified beam
US11644542B2 (en) 2021-09-20 2023-05-09 Raytheon Company Optical sensor with MEMS MMA steered transmitter and staring detector
US12259277B2 (en) 2021-09-20 2025-03-25 Raytheon Company Image polarimeter using a micro-electro-mechanical system (MEMS) micro-mirror array (MMA)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10200154A (ja) 1997-01-10 1998-07-31 Toshiba Corp 光半導体素子及びその製造方法
CN1338783A (zh) * 2000-08-15 2002-03-06 中国科学院半导体研究所 半导体面发光器件及增强横向电流扩展的方法
JP2003307656A (ja) 2002-04-17 2003-10-31 Alps Electric Co Ltd 光送受信用モジュール
CN1507065A (zh) * 2002-12-06 2004-06-23 ���ṫ˾ 光收发装置
US20050053379A1 (en) * 1998-08-26 2005-03-10 Jockerst Nan Marie System and method for bi-directional optical communication using stacked emitters and detectors
US20060127017A1 (en) * 2003-07-31 2006-06-15 Kabushiki Kaisha Toshiba Optical transmission device
US20070025405A1 (en) * 2005-08-01 2007-02-01 Dong Pan Bidirectional transceiver assembly for POF application

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6117760A (ja) 1984-06-29 1986-01-25 Daihatsu Motor Co Ltd Ｖベルト式無段変速機の制御装置
JPS6117760U (ja) * 1984-07-07 1986-02-01 オムロン株式会社 受発光器
JP3916296B2 (ja) 1997-07-02 2007-05-16 ユニ・チャーム株式会社 包装体の開封構造
JP3898375B2 (ja) * 1999-04-21 2007-03-28 京セラ株式会社 双方向光モジュール
JP4012648B2 (ja) 1999-04-21 2007-11-21 矢崎総業株式会社 発光・受光装置
JP2002064221A (ja) * 2000-08-18 2002-02-28 Hitachi Cable Ltd 発光ダイオード
AT410266B (de) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
WO2002084358A1 (de) * 2001-04-18 2002-10-24 Infineon Technologies Ag Sendemodul für eine optische signalübertragung
JP3834224B2 (ja) 2001-06-28 2006-10-18 株式会社アドバンテスト 化学物質検出方法及び装置
JP2004055567A (ja) 2002-05-31 2004-02-19 Toyoda Gosei Co Ltd 通信用発光素子
WO2004081140A1 (ja) * 2003-03-13 2004-09-23 Nichia Corporation 発光膜、発光装置、発光膜の製造方法および発光装置の製造方法
JP4054717B2 (ja) * 2003-05-26 2008-03-05 シャープ株式会社 光通信モジュールおよびそれを用いた光通信システム
JP2007165728A (ja) 2005-12-15 2007-06-28 Toshiba Discrete Technology Kk 発光装置及び可視光通信用照明装置
KR100810209B1 (ko) * 2005-12-29 2008-03-07 삼성전자주식회사 반이중 통신방식의 광연결 구조 및 이에 적합한 광소자
JP2007305965A (ja) 2006-04-14 2007-11-22 Toyoda Gosei Co Ltd 発光素子およびこれを用いた通信装置
KR100754695B1 (ko) * 2006-06-20 2007-09-03 삼성전자주식회사 광송신기 및 이를 이용한 광무선 네트워크
JP2009151041A (ja) * 2007-12-20 2009-07-09 Fujitsu Ltd 光モジュールおよび光送受信モジュール
JP2008277865A (ja) * 2008-08-18 2008-11-13 Sony Corp 発光ダイオードの駆動方法、表示装置の駆動方法、電子機器の駆動方法および光通信装置の駆動方法
JP5601442B2 (ja) 2009-03-31 2014-10-08 セイコーＮｐｃ株式会社 赤外線光学系の評価装置
CN101901082A (zh) * 2009-06-01 2010-12-01 北京汇冠新技术股份有限公司 一种触摸检测装置
JP5582967B2 (ja) 2010-10-27 2014-09-03 京セラ株式会社 光照射装置、光照射モジュール、および印刷装置
JP5943407B2 (ja) 2011-03-07 2016-07-05 国立大学法人豊橋技術科学大学 窒化物半導体発光素子及びその製造方法
JP5862354B2 (ja) * 2011-04-15 2016-02-16 三菱化学株式会社 窒化物系発光ダイオード素子とその製造方法
WO2013113456A1 (de) * 2012-02-03 2013-08-08 Mechaless Systems Gmbh Kompensation eines optischen sensors über die leiterplatte
CN103837945A (zh) * 2012-11-28 2014-06-04 浜松光子学株式会社 单芯光收发器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10200154A (ja) 1997-01-10 1998-07-31 Toshiba Corp 光半導体素子及びその製造方法
US20050053379A1 (en) * 1998-08-26 2005-03-10 Jockerst Nan Marie System and method for bi-directional optical communication using stacked emitters and detectors
CN1338783A (zh) * 2000-08-15 2002-03-06 中国科学院半导体研究所 半导体面发光器件及增强横向电流扩展的方法
JP2003307656A (ja) 2002-04-17 2003-10-31 Alps Electric Co Ltd 光送受信用モジュール
CN1507065A (zh) * 2002-12-06 2004-06-23 ���ṫ˾ 光收发装置
US20060127017A1 (en) * 2003-07-31 2006-06-15 Kabushiki Kaisha Toshiba Optical transmission device
US20070025405A1 (en) * 2005-08-01 2007-02-01 Dong Pan Bidirectional transceiver assembly for POF application

Also Published As

Publication number Publication date
JP2017157871A (ja) 2017-09-07
JP2015537379A (ja) 2015-12-24
EP2927722B1 (en) 2018-10-17
US20150311981A1 (en) 2015-10-29
EP2927722A4 (en) 2016-07-20
CN104813209B (zh) 2017-08-22
CN103837945A (zh) 2014-06-04
CN104813209A (zh) 2015-07-29
EP2927722A1 (en) 2015-10-07
US9762327B2 (en) 2017-09-12
JP6194364B2 (ja) 2017-09-06

Similar Documents

Publication Publication Date Title
CN104813209B (zh) 单芯光收发器
TWI446036B (zh) 光學傳輸模組
WO2019105113A1 (zh) 光收发器件
US10785359B2 (en) Lighting device for a mobile terminal
CN202904073U (zh) 一种光收发模块
KR101885080B1 (ko) 파장 다중화 광수신 모듈
JP2008091889A (ja) 有機発光素子および無機光検出器を備える集積光結合器
US9472695B2 (en) Opto-coupler and method of manufacturing the same
US20210080320A1 (en) Optocoupler with Side-Emitting Electromagnetic Radiation Source
CN102141660A (zh) 光收发一体装置
CN110850533A (zh) 单纤四向光组件及光模块
CN102709334A (zh) 高性能半导体光接收器
CN104683032A (zh) 单芯光收发器
WO2024199417A1 (zh) 一种光收发组件、光模块和通信设备
KR100810209B1 (ko) 반이중 통신방식의 광연결 구조 및 이에 적합한 광소자
CN102955209A (zh) Led可见光通信系统及光接收天线
CN202551034U (zh) 高性能半导体光接收器
JPH05190908A (ja) 光電変換装置
KR101361069B1 (ko) 광 서브어셈블리
CN222125478U (zh) 光收发模块的封装装置
CN221039537U (zh) 一种单纤四端口Combo PON光器件
TWI436602B (zh) 整合式光纖連接元件
CN208737054U (zh) 光收发模块
US20180198524A1 (en) Photovoltaic receiver device with polarisation management in order to increase the bandwidth of an optical communication
TWI588552B (zh) 光收發次組件及其製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13859311

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2015540042

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2013859311

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 14647222

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE