WO2014114606A3 - Structure semiconductrice et procede de fabrication d'une structure semiconductrice - Google Patents

Structure semiconductrice et procede de fabrication d'une structure semiconductrice Download PDF

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Publication number
WO2014114606A3
WO2014114606A3 PCT/EP2014/051067 EP2014051067W WO2014114606A3 WO 2014114606 A3 WO2014114606 A3 WO 2014114606A3 EP 2014051067 W EP2014051067 W EP 2014051067W WO 2014114606 A3 WO2014114606 A3 WO 2014114606A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor structure
junction
dispersion
dispersion layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2014/051067
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English (en)
Other versions
WO2014114606A2 (fr
Inventor
David Vaufrey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority to EP14701507.7A priority Critical patent/EP2948988B1/fr
Priority to US14/762,660 priority patent/US9640722B2/en
Publication of WO2014114606A2 publication Critical patent/WO2014114606A2/fr
Publication of WO2014114606A3 publication Critical patent/WO2014114606A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures

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  • Led Devices (AREA)

Abstract

Structure (1) semiconductrice adaptée pour émettre un rayonnement électromagnétique. La structure (1) comporte une première et une deuxième zone (10, 20) présentant respectivement un premier et un second type de conductivité opposé l'un par rapport à l'autre, lesdites première et deuxième zones (10, 20) étant reliées l'une à l'autre pour former une jonction semiconductrice. La première zone (10) comporte au moins une première et une deuxième partie (11, 12), la première et la deuxième partie (11, 12) étant séparées l'une de l'autres par une couche (13) intermédiaire, dite de dispersion, s'étendant sensiblement parallèlement au plan de jonction le long d'une majeure partie de la jonction. La couche de dispersion (13) est adaptée pour provoquer une dispersion les porteurs le long du plan de la couche de dispersion (13).
PCT/EP2014/051067 2013-01-22 2014-01-21 Structure semiconductrice et procede de fabrication d'une structure semiconductrice Ceased WO2014114606A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP14701507.7A EP2948988B1 (fr) 2013-01-22 2014-01-21 Structure semiconductrice et procede de fabrication d'une structure semiconductrice
US14/762,660 US9640722B2 (en) 2013-01-22 2014-01-21 Semiconductor structure and method for manufacturing a semiconductor structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1350540A FR3001335A1 (fr) 2013-01-22 2013-01-22 Structure semiconductrice et procede de fabrication d'une structure semiconductrice
FR1350540 2013-01-22

Publications (2)

Publication Number Publication Date
WO2014114606A2 WO2014114606A2 (fr) 2014-07-31
WO2014114606A3 true WO2014114606A3 (fr) 2014-10-23

Family

ID=48521141

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2014/051067 Ceased WO2014114606A2 (fr) 2013-01-22 2014-01-21 Structure semiconductrice et procede de fabrication d'une structure semiconductrice

Country Status (4)

Country Link
US (1) US9640722B2 (fr)
EP (1) EP2948988B1 (fr)
FR (2) FR3001335A1 (fr)
WO (1) WO2014114606A2 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110244616A1 (en) * 2010-03-31 2011-10-06 Varian Semiconductor Equipment Associates, Inc. Vertical structure led current spreading by implanted regions
EP2375458A2 (fr) * 2010-04-09 2011-10-12 LG Innotek Co., Ltd. Dispositif électroluminescent avec une tolérance ESD augmentée
US20130221385A1 (en) * 2010-09-01 2013-08-29 Sharp Kabushiki Kaisha Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020104997A1 (en) * 2001-02-05 2002-08-08 Li-Hsin Kuo Semiconductor light emitting diode on a misoriented substrate
KR100638818B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 질화물 반도체 발광소자
KR100931509B1 (ko) * 2006-03-06 2009-12-11 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
US8237174B2 (en) * 2010-05-10 2012-08-07 National Central University LED structure
FR2997551B1 (fr) 2012-10-26 2015-12-25 Commissariat Energie Atomique Procede de fabrication d'une structure semiconductrice et composant semiconducteur comportant une telle structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110244616A1 (en) * 2010-03-31 2011-10-06 Varian Semiconductor Equipment Associates, Inc. Vertical structure led current spreading by implanted regions
EP2375458A2 (fr) * 2010-04-09 2011-10-12 LG Innotek Co., Ltd. Dispositif électroluminescent avec une tolérance ESD augmentée
US20130221385A1 (en) * 2010-09-01 2013-08-29 Sharp Kabushiki Kaisha Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KOLPER C ET AL: "Core-shell InGaN nanorod light emitting diodes: Electronic and optical device properties", PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE NOVEMBER 2012 WILEY-VCH VERLAG DEU, vol. 209, no. 11, November 2012 (2012-11-01), pages 2304 - 2312, XP002722041, DOI: 10.1002/PSSA.201228178 *

Also Published As

Publication number Publication date
US20150364648A1 (en) 2015-12-17
FR3001335A1 (fr) 2014-07-25
FR3001336B1 (fr) 2016-10-21
WO2014114606A2 (fr) 2014-07-31
FR3001336A1 (fr) 2014-07-25
EP2948988B1 (fr) 2020-04-08
US9640722B2 (en) 2017-05-02
EP2948988A2 (fr) 2015-12-02

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