WO2014117970A1 - Composant semi-conducteur opto-électronique et détecteur de rayonnement - Google Patents

Composant semi-conducteur opto-électronique et détecteur de rayonnement Download PDF

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Publication number
WO2014117970A1
WO2014117970A1 PCT/EP2014/050234 EP2014050234W WO2014117970A1 WO 2014117970 A1 WO2014117970 A1 WO 2014117970A1 EP 2014050234 W EP2014050234 W EP 2014050234W WO 2014117970 A1 WO2014117970 A1 WO 2014117970A1
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WO
WIPO (PCT)
Prior art keywords
filter element
filter
radiation
layer
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2014/050234
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German (de)
English (en)
Inventor
Hubert Halbritter
Christian Müller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2014117970A1 publication Critical patent/WO2014117970A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/008—Surface plasmon devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/204—Filters in which spectral selection is performed by means of a conductive grid or array, e.g. frequency selective surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers

Definitions

  • Optoelectronic Semiconductor Device is specified.
  • a radiation sensor is specified.
  • An object to be solved is to specify a radiation sensor with an optoelectronic semiconductor component with a high contrast between a radiation to be detected and a radiation that is not to be detected.
  • this includes
  • the at least one semiconductor chip is for the detection of ultraviolet, visible and / or
  • ultraviolet radiation is radiation in the spectral range between 200 nm and 420 nm inclusive or between 350 nm and 420 nm inclusive.
  • Visible radiation means in particular the spectral range between 420 nm and 700 nm inclusive.
  • Near-infrared radiation denotes, for example, wavelengths in the range above 700 nm and up to 1500 nm or 1100 nm or 950 nm.
  • the radiation-detecting semiconductor chip is preferably a photodiode.
  • the semiconductor component comprises one or more first filter elements.
  • the at least one first filter element is designed as a Bragg filter. This means a filtering effect of the first
  • Filter element is based at least partially or completely on reflection and interference at a plurality of layers with alternating refractive indices.
  • the first filter element is designed as in the document
  • the at least one second filter element is a
  • the filter element consists of a metal or a metal alloy or has as an essential component a metal or a metal alloy. Furthermore, this means that a filter effect comes about by an optical excitation of plasmons and this plasmonic filter fraction the
  • the metallic plasmonic filter is formed from a patterned metal layer.
  • the first and the second filter element follow one another along a path of travel of the radiation to be detected.
  • the radiation to be detected passes through both the first and the second filter element before this radiation reaches the optoelectronic semiconductor chip.
  • the first and the second filter element are different from each other Transmission spectra on.
  • the transmission spectra each have one or more spectral transmission windows.
  • a spectral transmission window is one such
  • Slope steepness is, for example, the spectral width within which the transmittance changes by 80% based on a difference of a maximum and a maximum
  • the first and the second filter element each have an absorption region on both sides of the at least one transmission window.
  • the wavelengths decrease both to shorter and to longer wavelengths
  • the relevant spectral range here means ultraviolet, visible and / or near-infrared
  • the first and second filter elements are then bandpass filters rather than low-pass or high-pass filters based on the relevant spectral range. In at least one embodiment, this includes
  • Optoelectronic semiconductor device an optoelectronic semiconductor chip, which is used for the detection of ultraviolet
  • the semiconductor device includes a first
  • Filter element which is a Bragg filter
  • second filter element which is a metallic plasmonic filter.
  • the first and second filter elements are arranged successively along a path of a radiation to be detected.
  • the first and the second filter element have different transmission spectra, each with at least one spectral transmission window.
  • Absorption regions of the first and second filter elements overlap and are located on either side of the at least one transmission window of the corresponding one
  • a filter with a high degree of suppression and with a high contrast with respect to a radiation to be detected and a radiation that can not be detected is overall possible.
  • a sensor with such a semiconductor device can be used, for example, as a color sensor or as an ambient light sensor, for example in
  • Bragg mirror with a large number of layers of alternating high and low refractive index.
  • Such a Bragg mirror then has, for example
  • Bragg mirror is associated with a comparatively high manufacturing outlay and is subject to limitations especially with respect to sidebands of a transmission window, especially if the too
  • Filter element are the production cost and the
  • Circuit complexity can be reduced and a high selectivity of radiation to be detected is given.
  • the first one exists
  • Filter element of alternating layers of dielectric and / or semiconducting materials.
  • the layers alternately have a high and a low refractive index and are preferably arranged in pairs. It is possible that the materials used in the relevant
  • the layers of the first filter element are made of silicon dioxide, of silicon nitride, of titanium dioxide or of a semiconductor material,
  • III-V semiconductor material such as
  • the first filter element is arranged between the semiconductor chip and the second filter element. It is possible that the first filter element is applied directly on a detection surface of the semiconductor chip. Furthermore, it is possible for the first filter element to comprise a passivation or a part of a passivation for a semiconductor material of the
  • Detection surface is for example a main surface of the
  • the second filter element comprises or consists of at least one metal layer.
  • a plurality of holes is made in the metal layer. The holes are preferably arranged in a regular pattern.
  • Diameter of the holes smaller than a medium wavelength the radiation to be detected. It is possible that, within the manufacturing tolerances, all holes have the same average diameter. Alternatively, it is possible that holes of two different diameters or of more than two different diameters are used, that is, for example, small holes and large holes are present.
  • the metal layer of the second filter element has a thickness which exceeds a skin depth of the metal from which the metal layer is made by at least a factor of 1.5 or by at least a factor of 2 or by at least a factor of three.
  • the skin depth here preferably refers to the middle one
  • the skin depth is a depth of penetration of the radiation into the metal layer and indicates the depth at which an intensity of the radiation has dropped to 1 / e. According to at least one embodiment, this includes
  • Semiconductor component an adhesive layer.
  • Bonding agent layer is improved in particular adhesion of the second filter element to the first filter element or on the semiconductor chip.
  • the bonding agent layer is improved in particular adhesion of the second filter element to the first filter element or on the semiconductor chip.
  • the first filter element can be applied directly to the semiconductor chip. According to at least one embodiment, the
  • Adhesive layer formed from at least one metal or consists of at least one metal or a
  • the adhesion promoter layer may consist of a layer stack may be formed of a plurality of metal layers, for example of a thin titanium layer, a platinum layer, a gold layer and / or copper layer.
  • the same structuring is preferably formed in the adhesion promoter layer as in the metal layer of the second filter element. It is thus possible that the locations of the detection surface, which are not covered by the metal of the second filter element, are not covered by a material of the adhesion promoter layer.
  • the adhesion promoter layer and the second filter element can be congruent.
  • the first and / or the second filter element have exactly one spectral
  • Filter element overlap spectrally or are spectrally superimposed. It is possible that the transmission windows have the same or similar spectral widths. Similarly, the spectral widths may differ by not more than 30% or more than 15%.
  • a maximum transmittance of the second filter element is in the
  • the transmittance is in particular the quotient of transmitted
  • Filter element and the second filter element spaced arranged from each other. It is possible that a gas-filled or evacuated cavity is located between the first and second filter elements. According to at least one embodiment, the first one
  • Filter element attached directly to the second filter element. This may mean that the two
  • the Filter element along the path of the radiation to be detected and in the direction away and / or towards the semiconductor chip, directly to an optically low-refractive layer.
  • the low refractive layer preferably has a refractive index at the middle one to be detected
  • the low refractive layer is formed by a gas layer or by an evacuated region. It is also possible that the low-refractive layer by about one
  • foamed polymer is formed.
  • at least one main side of the second filter element is completely covered completely by the low-refraction layer.
  • the low-refractive-index layer engages in the second filter layer, in particular in the holes or openings in the second filter layer. It is possible for the low refractive layer to contact the first through the holes
  • Filter layer and / or to the semiconductor chip has.
  • Radiation sensor comprises at least one optoelectronic semiconductor device, as in conjunction with one or more of the above embodiments. Characteristics of the radiation sensor are therefore also disclosed for the optoelectronic semiconductor component and vice versa. According to at least one embodiment, the
  • Radiation sensor a cover plate.
  • the cover plate covers the optoelectronic semiconductor device along a
  • Radiation sensor in the intended use for a viewer is not visible.
  • Cover plate integrated into a housing of the radiation sensor and adapted to the housing with regard to an optical appearance.
  • the visible light cover plate has a lower transmittance than near infrared radiation.
  • the cover plate appears obscure or black to a viewer. It is possible that the cover plate in the near-infrared
  • Spectral range is transparent or substantially transparent.
  • a transmittance of the first and the second filter element taken together is less than one in the near-infrared spectral range
  • the radiation sensor is then designed, for example, as an ambient light sensor and sensitive to visible light.
  • Cover plate in the visible spectral range TVIS / TIR> 3 or TVIS / TIR> 5.
  • a transmittance of the cover plate in the visible spectral range is large compared to the transmittance of the first and the second
  • Figures 1 to 3 are schematic sectional views of
  • Figure 4 is a schematic sectional view of a
  • Figures 5 and 6 are schematic representations of spectra of filter elements.
  • Figure 1 is an embodiment of a
  • a support 7 which may be a printed circuit board or a circuit board, is an optoelectronic
  • the semiconductor chip 2 is preferably a photodiode, in particular a silicon photodiode.
  • the semiconductor chip 2 is followed by a first filter element 31 immediately after.
  • the first filter element 31 is a Bragg filter having a plurality of layers of alternately high and low refractive index, such as radiation-transmissive materials.
  • individual layers of the first filter element 31 may be made of a semiconductor material such as
  • Indium phosphide be formed so that a filtering effect can also be done via a radiation absorption below a band edge of this semiconductor material.
  • the individual layers preferably have an optical thickness which is in each case half as large as a wavelength of
  • the individual layers of the first filter element 31 are not shown.
  • the first filter element 31 comprises at most 20 or 10 or 6 such layers.
  • the first filter element 31 is followed by a second filter element 32.
  • the second filter element 32 is a metallic plasmonic filter.
  • the second filter element is formed of a metal layer into which a plurality of holes in a regular pattern are arranged. The holes are for the sake of simplicity
  • the second filter element 32 is made of an aluminum layer or a silver layer in which the holes are formed.
  • Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a
  • an adhesive layer 4 between the first filter element 31 and the second filter element 32 an adhesive layer 4.
  • the adhesive layer 4 is formed of one or more metals.
  • Filter element 32 preferably also extend through the
  • the adhesion promoter layer 4 is preferably thinner than the metal layer forming the second filter element 32.
  • a thickness of the adhesion promoter layer 4 is at most 30 nm or 20 nm or 10 nm or 5 nm.
  • Metal layer is so large that without the holes in the second filter element 32, no or substantially no radiation would pass through the second filter element 32 to the semiconductor chip 2.
  • metal layer of the second filter element 32 shaped holes is a radiation transmissivity in a particular
  • FIG. 2 shows a further exemplary embodiment of the invention
  • the semiconductor device 1 illustrated.
  • the semiconductor device 1 comprises the first carrier 7a and a further carrier 7b.
  • the second filter element 32 is attached directly or indirectly to the semiconductor chip 2. It is possible that the second filter element 32 to a flow expansion over the
  • the first filter element 31 is applied to the further carrier 7b on a side facing the semiconductor chip 2 side. As in all other embodiments, it is possible that the positions of the filter elements 31, 32 are interchanged.
  • the second filter element 32 follows in the direction away from the first filter element 31 and
  • the low refractive layer 6 is a gas layer or a
  • a material of the layer 6, which in this context also the term vacuum is understood as a material, may extend through the holes, not shown in the second filter element 32 to the first filter element 31 out.
  • FIG. 4 shows a radiation sensor 10.
  • Radiation sensor 10 comprises a semiconductor device 1, approximately as shown in connection with Figures 1 to 3.
  • the radiation sensor 10 comprises exactly one
  • the Radiation sensor 10 not shown further semiconductor chips such as to a signal evaluation or protection against damage by electrostatic discharges includes.
  • the semiconductor device 1 is housed in the carrier 7, which is formed as a housing. In the direction away from the carrier 7, the semiconductor component 1 is followed by a cover plate 5, which is fastened to the carrier 7.
  • the cover plate 5 is preferably a dark or a black glass which has a low transmittance T in the visible
  • Spectral range VIS and has a high transmittance T in the near-infrared spectral range NIR, see also Figure 5B. Through the cover 5 through this is
  • FIG. 5A shows the transmittance T as a function of the wavelength ⁇ of the first filter element 31 and of the second filter element 32, for the relevant spectral range in the visible VIS and in the near-infrared NIR.
  • the transmittance T is shown as a function of the wavelength ⁇ .
  • Cover plate 5 is shown in FIG. 5C and relates, for example, to the exemplary embodiment of FIG.
  • Transmittance T is relatively small.
  • a contrast between the maximum transmittance in the visible spectral range VIS and in the near-infrared spectral range NIR is preferably at least 10 and / or at most 40.
  • Transmission window of the filter elements 31, 32 lie one above the other according to FIG. 5A and are each visible
  • Spectral range VIS for example in the range between
  • RGB sensor Spectral range is realized, so that a so-called RGB sensor can be built, then, for example, three of the
  • Semiconductor devices 1 with different detection spectra includes. Notwithstanding the representation according to FIG. 5, it is also possible for the transmission windows to be in the near-infrared
  • Spectral range for example, at least 850 nm or 880 nm or 950 nm and / or at most 1100 nm, corresponding to the band gap of a silicon photodiode.
  • the combination of the plasmonic filter 32 with the Bragg filter 31 is optionally also a larger
  • Wavelength ⁇ for a conventional sensor is illustrated in FIG. 6, compare the spectra of a cover plate 5 and a normal Bragg filter in FIG. 6A and FIG Sum spectrum in the differently scaled figure 6B.
  • Filter elements 31, 32 is a contrast significantly improved and a desired receiving characteristic of

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Dans au moins un mode de réalisation, l'invention concerne un composant semi-conducteur opto-électronique (1) comprenant une puce à semi-conducteur opto-électronique (2) pour la détection de rayonnement. En outre, le composant semi-conducteur (1) contient un premier élément filtrant (31) qui est un filtre de Bragg et un deuxième élément filtrant (32), qui est un filtre métallique plasmonique. Le premier et le deuxième élément filtrant (31, 32) sont disposés l'un derrière l'autre le long d'une voie de circulation (D) d'un rayonnement (R) devant être détecté et présentent des spectres de transmission différents l'un de l'autre, chacun ayant au moins une fenêtre spectrale de transmission. Les fênetres spectrales de transmission sont délimitées par des zones d'absorption de telle manière que les éléments filtrants (31, 32) forment des filtres passe-bande. Les zones d'absorption du premier et du deuxième élément filtrant (31, 32) se chevauchent et se trouvent chacune de part et d'autre de la ou des fenêtres de transmission de l'élément filtrant considéré. Cet agencement filtrant permet de réaliser un filtre à contraste élevé entre un rayonnement à détecter et un rayonnement ne devant pas être détecté.
PCT/EP2014/050234 2013-01-31 2014-01-08 Composant semi-conducteur opto-électronique et détecteur de rayonnement Ceased WO2014117970A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013101001.6 2013-01-31
DE102013101001.6A DE102013101001B4 (de) 2013-01-31 2013-01-31 Optoelektronisches Halbleiterbauteil und Strahlungssensor

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WO2014117970A1 true WO2014117970A1 (fr) 2014-08-07

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WO2010051231A1 (fr) * 2008-10-31 2010-05-06 Cpfilms, Inc. Filtre d'interférence composite à transmission variable
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EP2249136A2 (fr) * 2009-05-05 2010-11-10 Apple Inc. Dispositif de détection de lumière doté d'un capteur de couleur et capteur photométrique pour rejeter les infrarouges
CA2838581A1 (fr) * 2011-06-06 2012-12-13 Asahi Glass Company, Limited Filtre optique, element d'imagerie a semi-conducteurs, lentilles de dispositif d'imagerie et dispositif d'imagerie
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JPS55155306A (en) * 1979-05-23 1980-12-03 Nippon Telegr & Teleph Corp <Ntt> Band-pass passing type optical filter
WO2010051231A1 (fr) * 2008-10-31 2010-05-06 Cpfilms, Inc. Filtre d'interférence composite à transmission variable
DE102009012755A1 (de) 2009-03-12 2010-09-16 Osram Opto Semiconductors Gmbh Strahlungsempfangendes Halbleiterbauelement und optoelektrisches Bauteil
EP2249136A2 (fr) * 2009-05-05 2010-11-10 Apple Inc. Dispositif de détection de lumière doté d'un capteur de couleur et capteur photométrique pour rejeter les infrarouges
CA2838581A1 (fr) * 2011-06-06 2012-12-13 Asahi Glass Company, Limited Filtre optique, element d'imagerie a semi-conducteurs, lentilles de dispositif d'imagerie et dispositif d'imagerie
WO2013080473A1 (fr) * 2011-11-30 2013-06-06 ソニー株式会社 Capteur chimique, module à capteur chimique, détecteur de substance chimique et procédé de détection d'une substance chimique
KR20130131913A (ko) * 2012-05-25 2013-12-04 한국과학기술원 광결정 구조를 포함하는 표면 플라즈몬 컬러필터

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DE102013101001A1 (de) 2014-07-31

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