WO2014161482A1 - 推挽式芯片翻转半桥磁阻开关 - Google Patents

推挽式芯片翻转半桥磁阻开关 Download PDF

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Publication number
WO2014161482A1
WO2014161482A1 PCT/CN2014/074574 CN2014074574W WO2014161482A1 WO 2014161482 A1 WO2014161482 A1 WO 2014161482A1 CN 2014074574 W CN2014074574 W CN 2014074574W WO 2014161482 A1 WO2014161482 A1 WO 2014161482A1
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WIPO (PCT)
Prior art keywords
push
bridge
switch
magnetoresistive
magnetic sensor
Prior art date
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Ceased
Application number
PCT/CN2014/074574
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English (en)
French (fr)
Inventor
白建民
沈卫锋
雷啸锋
张小军
钟小军
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MultiDimension Technology Co Ltd
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MultiDimension Technology Co Ltd
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Application filed by MultiDimension Technology Co Ltd filed Critical MultiDimension Technology Co Ltd
Priority to US14/781,877 priority Critical patent/US9739850B2/en
Priority to JP2016505694A priority patent/JP6420821B2/ja
Priority to EP14778313.8A priority patent/EP2983293A4/en
Publication of WO2014161482A1 publication Critical patent/WO2014161482A1/zh
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/965—Switches controlled by moving an element forming part of the switch
    • H03K17/97—Switches controlled by moving an element forming part of the switch using a magnetic movable element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/945—Proximity switches
    • H03K17/95—Proximity switches using a magnetic detector
    • H03K17/9517—Proximity switches using a magnetic detector using galvanomagnetic devices

Definitions

  • the present invention relates to a magnetoresistive sensor product comprising a plurality of chips in a single package. More specifically, the present invention relates to a push-pull chip flip half bridge magnetoresistive switch.
  • Magnetic switch sensors are widely used in consumer electronics, white goods, three-meter (electric meters, water meters, gas meters), automotive and industrial applications.
  • Current mainstream magnetic switch sensors include Hall sensors and anisotropic magnetoresistive (AMR) sensors.
  • Hall switch sensor and AMR in consumer electronics and three-meter applications
  • the switching sensor can consume up to a few microamps, which is obtained at the expense of its operating frequency. Its operating frequency is ten Hz, its switching point is tens of gauss; in automotive, industrial applications, etc., it requires high operating frequency.
  • Environment, Hall switch sensor and The AMR switch sensor consumes milliamps and operates at kilohertz.
  • Magnetic tunnel junction The sensor whose component is a sensitive component is a new magnetoresistance effect sensor that has been industrially applied in recent years. It utilizes the tunnel magnetoresistance effect of the magnetic multilayer film material, mainly in the magnetic multilayer film material along with the magnitude of the external magnetic field and The change in direction causes a significant change in the electrical resistance of the magnetic multilayer film.
  • the switching sensor of the MTJ component is a sensitive component with a power consumption of micro-ampere at a working frequency of kilohertz and a switching point of ten gauss; in an environment requiring high operating frequency for automotive, industrial applications, etc. Switching sensors with sensitive components can operate at frequencies up to megahertz and consume only microamps.
  • the existing switching sensor Since the existing switching sensor has high power consumption in the sleep or working state, and the operating frequency is low, a high sensitivity is required for this, regardless of the low power consumption in the sleep or working state, the response frequency is high, and the switching sensor is small in size.
  • the existing switching sensor has high power consumption in the sleep or working state, and the operating frequency is low. Therefore, a high sensitivity is required, regardless of the power consumption in the sleep or working state, the response frequency is high, and the switching sensor is small in size.
  • the invention provides a push-pull chip flip half-bridge magnetoresistive sensor, which can improve the sensing performance.
  • the push-pull half-bridge magnetoresistive switch comprises two magnetic sensor chips, each of which has a magnetic induction resistor and a pad for electrical connection of the magnetic induction resistor.
  • the two magnetic sensor chips are electrically interconnected, and the two sensing directions are opposite and parallel, forming a push-pull half-bridge circuit.
  • the magnetic induction resistor includes one or more magnetoresistive elements connected in series, the pads of the magnetic induction resistor are located on two adjacent sides of the magnetic sensor chip, and each pad can accommodate at least two solders Welding of the wire.
  • the push-pull half-bridge magnetoresistive switch comprises two magnetic induction resistors, each of which is formed on a separate chip to form an independent magnetic sensor chip.
  • One of the magnetic sensor chips rotates in the sensing plane relative to the other magnetic sensor chip 180 °, the output circuit in the form of a half bridge is realized.
  • Such a half-bridge circuit peripheral can be connected to a specific driving circuit such as a power supply adjusting circuit, an amplifying circuit, a digital switch control circuit, and the like.
  • the two magnetic sensor chips have pads for wire bonding, and the magnetoresistive magnetic sensor chip and other circuits are electrically connected by wire bonding.
  • the push-pull half-bridge magnetoresistive switch further includes at least one ASIC for converting an output signal of the push-pull half-bridge circuit into a switching signal .
  • each magnetic sensor chip includes at least three electrical connection points.
  • the push-pull half bridge reluctance switch includes at least a power terminal, a ground terminal and an output terminal, and each of the terminals and the magnetic body is realized by a bonding point on the conductive lead frame and a bonding wire on the lead frame. Sensor chip and ASIC connection.
  • a push-pull half-bridge magnetoresistive switch comprising two magnetic sensor chips each having a magnetic induction resistor and a pad for electrical connection of a magnetic induction resistor.
  • the two magnetic sensor chips are electrically interconnected, and the two sensing directions are opposite and parallel, forming a push-pull half-bridge circuit.
  • the magnetic inductive resistor includes one or more magnetoresistive elements connected in series, the pads of the magnetic inductive resistor being located at the corners of the magnetic sensor chip, and the diagonally located pads being electrically connected to the same terminal of the magnetic inductive resistor.
  • the push-pull half-bridge magnetoresistive switch further includes at least one for converting an output signal of the push-pull half-bridge circuit into a switching signal ASIC.
  • each magnetic sensor chip has at least three electrical connection points.
  • the push-pull half-bridge reluctance switch comprises at least electricity
  • the source terminal, the ground terminal and the output terminal realize connection of the terminal to the magnetic sensor chip and the ASIC through the conductive lead frame and the lead on the lead frame.
  • the magnetoresistive element is an MTJ element.
  • the magnetoresistive element is a GMR element.
  • the magnetoresistive element is an AMR element.
  • the magnetoresistive element is magnetically biased using an on-chip permanent magnet.
  • the magnetoresistive element is magnetically biased using a stack.
  • the magnetoresistive element is magnetically biased using shape anisotropy.
  • the two magnetic sensor chips are arranged with the same direction of the sense axis, and the direction of the sense axis is parallel or perpendicular to the line between the centers of the two magnetic sensor chips.
  • the push-pull half-bridge reluctance switch according to the present invention can achieve the beneficial effects that the structure of the push-pull half-bridge can improve the sensitivity of the sensor; the two sensor chips can be well matched to reduce the deviation of the output voltage, and Small output voltage drifts with temperature; novel package and wire bonding methods help reduce the size of the switching sensor and improve the performance of the switching sensor.
  • Figure 1 is a cross-sectional view of the MTJ component connected to the meter.
  • Figure 2 is a schematic cross-sectional view of a series of magnetoresistive elements formed by series MTJ elements.
  • Figure 3 is a perspective view of the MTJ element between two permanent magnets.
  • Figure 4 is a plot of the magnetic induction resistance versus the applied magnetic field.
  • Figure 5 is a graph showing the relationship between the voltage of a half-bridge circuit composed of TMR elements and an applied magnetic field.
  • Figure 6 is a circuit block diagram of a push-pull half-bridge magnetoresistive switch including a magnetic sensor chip and an ASIC in accordance with the present invention.
  • FIG. 7(a) and (b) are representative circuit diagrams and top views of a magnetic sensor chip in accordance with a first embodiment of the present invention.
  • Figure 8 is a partial detail view of the magnetic sensor chip shown in Figure 7 (b).
  • Figure 9 is a top plan view of a magnetic sensor chip in accordance with a second embodiment of the present invention.
  • Figure 10 is a top plan view of a magnetic sensor chip in accordance with a third embodiment of the present invention.
  • Figure 11 is a top plan view of a magnetic sensor chip in accordance with a fourth embodiment of the present invention.
  • Figure 12 is a top plan view of a magnetic sensor chip in accordance with a fifth embodiment of the present invention.
  • FIG. 13(a) and (b) are circuit schematic diagrams of a half bridge circuit of a first type and a second type according to the present invention.
  • Figure 14 is a circuit block diagram of another magnetoresistive switch circuit in accordance with the present invention.
  • Figure 15 (a) and (b) show the two distributions of the ASIC's pads.
  • Figure 16 shows a first magnetoresistive sensor magnetic sensor chip package form in accordance with the present invention.
  • Figure 17 shows the second magnetoresistive sensor magnetic sensor chip package.
  • Figure 18 shows the third magnetoresistive sensor magnetic sensor chip package.
  • Figure 19 shows the fourth magnetoresistive sensor magnetic sensor chip package.
  • FIG. 1 is a schematic cross-sectional view of an MTJ component connected to an electricity meter showing the structure and electronic measurement principles of the MTJ component.
  • the MTJ 1 includes a pinning layer 2, a tunnel barrier layer 5, and a ferromagnetic layer 6, also referred to as a sensitive layer 6.
  • the pinning layer 2 is composed of a ferromagnetic layer 4, also referred to as a pinned layer 4 and an antiferromagnetic layer 3.
  • the exchange coupling between the ferromagnetic layer 4 and the antiferromagnetic layer 3 determines the magnetization direction of the ferromagnetic layer 4.
  • the tunnel barrier layer 5 is usually composed of MgO or Al 2 O 3 and is located at the upper portion of the ferromagnetic layer 4.
  • the ferromagnetic layer 6 is located at the upper portion of the tunnel barrier layer 5.
  • Arrows 8 and 7 represent the magnetization vectors of the pinned layer 4 and the sensitive layer 6, respectively.
  • the magnetization vector 8 of the pinned layer 4 is relatively fixed under the action of a magnetic field of a certain magnitude, and the magnetization vector 7 of the sensitive layer 6 is relatively free and rotatable relative to the magnetization vector 8 of the pinned layer 4.
  • a magnetic field perpendicular to the sensing direction can be added, and the cross-axis bias field H bias (see paragraph 34 for a detailed description).
  • the magnetization vector 7 of the magnetic induction layer needs to have a smooth rotation.
  • the typical thickness of each of the antiferromagnetic layer 3, the ferromagnetic layer 4, the tunnel barrier layer 5, and the ferromagnetic layer 6 is between 0.1 nm and 100 nm.
  • the lower electrode layer 16 and the upper electrode layer 17 are connected to the antiferromagnetic layer 3 and the sensitive layer 6, respectively.
  • Electrode layer 16 , 17 A non-magnetic conductive material is typically used to carry current into the ohmmeter 18 .
  • the ohmmeter 18 adds a fixed potential or current between the two electrode layers of the MTJ, and correspondingly generates a current value or a voltage value, thereby calculating The resistance value of MTJ.
  • the tunnel barrier layer 5 provides most of the device's resistance, approximately 1000 ohms, while all conductors have a resistance of approximately 10 ohms.
  • the bottom electrode layer 16 is formed on the insulating substrate Above 9 , the edge of the insulating substrate 9 exceeds the edge of the bottom electrode layer 16.
  • An insulating substrate 9 is formed over the base substrate 10.
  • the material of the base substrate may be, for example, silicon, quartz or heat resistant glass, GaAs, AlTiC, etc. can be integrated into the material of the wafer. Silicon is the best choice because it is easy to process into an integrated circuit, although magnetic sensors do not always require such a circuit.
  • Figure 2 shows a schematic cross-sectional view of a resistive arm formed by series MTJ elements.
  • MTJ components Due to the small size, MTJ components can be connected in series to form an MTJ component string to increase sensitivity and reduce 1/F (1/frequency) Noise, while improving its ESD performance, see Figure 2.
  • the MTJ element 40 is intermediate between the bottom electrode 41 and the top electrode 42, and the three form a sandwich structure. Current 43 flows vertically The MTJ element 40 then flows horizontally through the bottom electrode 41 or the top electrode 42 and then vertically through the adjacent MTJ elements, thus alternately forming the current path of the MTJ element string.
  • the resistance value of the reference arm does not change with the change of the applied magnetic field
  • the resistance value of the sensing arm changes with the change of the applied magnetic field.
  • the MTJ element 70 is fixed in the middle of two permanent magnets 71, and two permanent magnets are positioned on the chip.
  • the top layer constructed on the bottom of the semiconductor substrate is not shown in the figure.
  • the strip-shaped permanent magnet 71 has a width (W) 73, a thickness (t) 74 and a length (Ly) 75 with a gap (Gap) 72 therebetween.
  • Strip permanent magnets are used to provide a cross-bias field within the plane of the substrate that is perpendicular to the sensitive axis or Y-axis 76. This direction is called the cross-axis or directly called the X-axis 78.
  • the magnetoresistive element 70 is designed to have an elliptical shape of a short axis W MR 82 and a long axis L MR 83 .
  • the cross section 70 of the magnetoresistive element is as shown in FIG.
  • the strip permanent magnets are first magnetized with a strong magnetic field, and their residual magnetization M PM 77 can be substantially perpendicular to the sensitive axis or Y-axis 76 of the MTJ element, substantially parallel to the intersecting axis or the X-axis 78, and located in the XY plane.
  • the X and Y axes are standard orthogonal Cartesian axes, and the Z axis is the normal direction of the substrate.
  • the XY plane is also referred to as the sensing surface.
  • Figure 4 is a graph showing the relationship between the resistance of a single magnetic induction resistor and the applied magnetic field. As shown in Figure 4 (a), when the applied magnetic field 20 The direction of the magnetism is parallel to the direction of the magnetic moment of the pinning layer 2 as indicated by the broken line, and when the intensity value of the applied magnetic field is greater than H1, the direction of the magnetic moment of the sensitive layer 6 as indicated by the solid line is parallel to the direction of the applied magnetic field 20, and thus Pinning layer The magnetization vector directions of 2 are parallel, and the resistance of the MTJ element is the smallest.
  • the sensitive layer When the direction of the applied magnetic field 20 is antiparallel to the direction of the magnetization vector of the pinning layer 2, and the intensity of the applied magnetic field is greater than H2, the sensitive layer The direction of the magnetic moment of 6 is parallel to the direction of the applied magnetic field 20, and is thus antiparallel to the direction of the magnetization vector of the pinning layer 2, at which time the resistance of the MTJ is the largest.
  • the magnetic field range between H1 and H2 is MTJ The measuring range of the component.
  • V the output voltage of the push-pull half-bridge circuit
  • the maximum value V max 25 the output voltage of the push-pull half-bridge circuit
  • the minimum value V min 23 the output voltage of the push-pull half-bridge circuit
  • V mid is approximately the average of V max and V min .
  • the output of the push-pull half-bridge circuit can be measured with a voltmeter that can be used as an input to a signal processing circuit such as a reluctance switching circuit.
  • Figure 6 shows a circuit block diagram of a push-pull half-bridge magnetoresistive switch including a magnetic sensor chip and an ASIC in accordance with the present invention.
  • the push-pull half-bridge circuit whose output characteristics are shown in Figure 5 can be used to form a magnetoresistive switch's 'MR Sensor' 87.
  • the push-pull half-bridge circuit has three connection terminals, which are a power supply terminal Vbias , a ground terminal GND, and a half-bridge output terminal Vbridge .
  • the output of the half-bridge output terminal, V bridge is shown by curve 21 in Figure 5.
  • the push-pull half-bridge reluctance switch shown in Figure 6 can be integrated into an ASIC that converts the output signal of the push-pull half-bridge circuit into a switching signal.
  • the ASIC includes, for example, a voltage stabilizing circuit 83, an internal reference circuit 86, a multiplexer 88, a low pass filter 91, and a comparison circuit 61, a digital control circuit 92, a latch and drive circuit 93, and the like which are sequentially connected thereafter.
  • the specific structure of the MR Sensor will be described later, and the connection of the chip to the chip in this switching circuit is shown in FIG.
  • the physical layout of the magnetic sensor chip of the present invention will first be described below.
  • Each magnetic inductive resistor consists of a large number of MTJ components.
  • the magnetic induction resistor is located on the base substrate 10
  • the substrate material is usually silicon, or may be glass, printed circuit board, alumina, ceramics or the like.
  • a manufacturing process such as photolithography, a large number of identical magnetic induction resistors can be fabricated in a rectangular region such as a silicon wafer, and then these methods are placed on the same wafer by wafer cutting, laser cutting, or the like without damaging the chip.
  • a large number of devices are separated into separate devices, and each device after separation is called a magnetic sensor chip.
  • the cutting process determines the shape of the magnetic sensor chip. Typically, the shape of the chip is rectangular.
  • the two magnetic sensor chips in the push-pull half-bridge circuit of the present invention preferably employ the same device, thereby simplifying the production steps and improving economic efficiency.
  • the two magnetic sensor chips are arranged such that they have opposite polarity responses.
  • Figure 7 (a) and ( b) shows a representative circuit diagram and a top view of a magnetic sensor chip composed of a magnetic induction resistor which is a string of magnetoresistive elements composed of MTJ elements connected in series.
  • Block diagram 102 For the magnetic and circuit schematic of the magnetic sensor chip, a magnetic inductive resistor 108 has two terminals. For example, according to the position on the figure, the terminal pointed to by the magnetization vector 8 of the pinned layer is named 'top' 1.1 The other end is named 'bottom' 2.1.
  • the terminals and the electrically interconnected terminals are represented by squares or circles, wherein the circular electrical terminals correspond to the tips and correspond to the land pads 104 through which the direction of the magnetic sensing resistors is discerned.
  • Black arrow 8 Representing the direction of the magnetization vector of the pinned layer
  • arrow 7 is the direction of the magnetization vector of the sensitive layer in an applied magnetic field (20 in Fig. 5)
  • the axis of induction 76 is parallel to the magnetization vector 8 of the pinned layer.
  • the rectangular chip 101 in Fig. 7(b) is a magnetic sensor chip, and Fig. 7(b) has a physical layout according to Embodiment 1 of the present invention.
  • the chip has four pads 103 - 106 corresponding to terminals 1.1, 1.2, 2.1, 2.2 in 7 (a).
  • Pad 104 is circular while the other three pads are square.
  • Such a layout can function to identify the direction of the chip, identify the sign and direction of the sensing axis.
  • the permanent magnet 71 provides a cross-axis bias field Hbias .
  • a magnetic induction resistor 108 is constructed of a plurality of MTJ elements 40 connected in series.
  • the top electrode 42 is used to realize electrical connection between the pad and the series of magnetoresistive elements, between the series of magnetoresistive elements and the string of magnetoresistive elements.
  • Figure 8 is a partially enlarged schematic view of Figure 7 (b).
  • the solid line of the ellipse 40 is the MTJ component, rectangle 41 It is the bottom electrode and the rectangle 42 is the top electrode.
  • 7 and 8 together constitute a top view of the magnetic sensor chip of the embodiment 1 of the present invention.
  • Figure 9-12 respectively show the layout of the magnetic sensor chip according to Embodiment 2 to Embodiment 5 of the present invention, in which the number of magnetoresistive strings may be different, MTJ
  • the size of the components can vary and the size and location of the pads can vary.
  • the rectangular chip 101 in Fig. 9 is a magnetic sensor chip having a physical layout according to Embodiment 2 of the present invention.
  • the chip has four pads 103 - 106 which are physical embodiments of electrical connection points.
  • pad 104 corresponding terminal 1.2, has a circular shape while the other three pads are square.
  • the permanent magnet 71 provides a cross-axis bias field Hbias .
  • a magnetic induction resistor 108 is constructed of a plurality of MTJ elements 40 connected in series.
  • the top electrode 42 is used to realize electrical connection between the pad and the series of magnetoresistive elements, between the series of magnetoresistive elements and the string of magnetoresistive elements.
  • the rectangular chip 101 in Fig. 10 is a magnetic sensor chip having a physical layout according to Embodiment 3 of the present invention.
  • the chip has four pads 103 - 106 which are physical embodiments of electrical connection points.
  • pad 104 corresponding terminal 1.2, has a circular shape while the other three pads are square.
  • the permanent magnet 71 provides a cross-axis bias field Hbias .
  • a magnetic induction resistor 108 is constructed of a plurality of MTJ elements 40 connected in series.
  • the top electrode 42 is used to realize electrical connection between the pad and the series of magnetoresistive elements, between the series of magnetoresistive elements and the string of magnetoresistive elements.
  • the rectangular chip 101 in Fig. 11 is a magnetic sensor chip having a physical layout according to Embodiment 4 of the present invention.
  • the chip has four pads 103 - 106 which are physical embodiments of electrical connection points.
  • pad 104 corresponding terminal 1.2, has a circular shape while the other three pads are square.
  • the permanent magnet 71 provides a cross-axis bias magnetic Hbias .
  • a magnetic induction resistor 108 is constructed of a plurality of MTJ elements 40 connected in series.
  • the top electrode 42 is used to realize electrical connection between the pad and the series of magnetoresistive elements, between the series of magnetoresistive elements and the string of magnetoresistive elements.
  • the rectangular chip 101 in Fig. 12 is a magnetic sensor chip having a physical layout according to Embodiment 5 of the present invention.
  • the chip 101 has two pads, each pad of the embodiment 5 chip being elongated to accommodate two electrical connection points with respect to the above embodiments.
  • pad 109 contains solder joints corresponding to terminals 1.1 and 1.2
  • pad 110 contains solder joints corresponding to terminals 2.1 and 2.2.
  • the permanent magnet 71 provides a cross-axis bias field Hbias .
  • a magnetic induction resistor 108 is constructed of a plurality of MTJ elements 40 connected in series.
  • the top electrode 42 is used to realize electrical connection between the pad and the series of magnetoresistive elements, between the series of magnetoresistive elements and the string of magnetoresistive elements.
  • Figure 13 (a) and 13 (b Is a circuit schematic of a 'half-bridge circuit formed by chip flipping according to the first type and the second type of the present invention, showing two magnetic sensor chips 101 and 101' being performed in the sensing plane. Electrical and magnetic schematics of two methods of rotation and placement. These two configurations are described by the relationship between the center point vector direction of the chip and the sensing axis. Configuration 118 The lines between the sensing axes of the two magnetic sensor chips and the center of the magnetic sensor chip are parallel to each other. In configuration 119, the lines between the sensing axes of the two magnetic sensing chips and the center of the magnetic sensing chip are perpendicular to each other. As described above, the induction axis 76 is parallel to the black arrow on each magnetic sensor chip.
  • Configuration 118 and Configuration 119 have three electrical terminals: GND 111 , V bridge 112 , V bias 113 .
  • electrical connections 114-117 which can also be called bonding wires, which can be used as electrical connections from the chip's internal pads to the device's external pads.
  • connection line 117 the two chips 101 and 101' constitute a series structure, and the magnetic sensor chip located at the lower end of the half bridge circuit is connected to GND through the connection line 114.
  • the magnetic sensor chip located at the high end of the half bridge circuit is connected to the power supply V bias through a connection line 116, and the output of the half bridge circuit is connected to the output terminal V bridge through a connection line 115.
  • Figure 14 is a circuit block diagram of the improved push-pull half-bridge magnetoresistive switch of Figure 6, with the addition of the half-bridge circuit formed by the flipping of the chip of Figure 13.
  • the frame line 87 in FIG. 14 is a circuit block diagram of the half bridge circuit formed by the chip flip.
  • the frame line 130 is a block diagram of the ASIC circuit shown in FIG. 6, and the connection points GND 111 , V bridge 112 and V bias 113 in the ASIC circuit diagram are respectively
  • the half-bridge circuit is connected to the terminal to complete the interconnection of the half-bridge circuit and the ASIC circuit.
  • the external terminals of the ASIC are: V CC 81 , V out 85 and GND 111', located on the right side of the figure.
  • GND111 and GND111' can be connected by a long bond wire integrated on the chip, or two ground points of GND111 and GND111' on one large pad.
  • Figure 15 is a top view of the two distributions of the ASIC pads of Figure 14.
  • Figure 15 (a) is a first form of ASIC 130 having the following pads: V CC 81 , V out 85 , GND 111 and 111 ', V bridge 112 and V bias 113 .
  • Figure 15 (b) shows the ASIC 130' formed in the second mode. It has the following pads: V CC 81 , V out 85 , GND111 and 111 ' (two separate pads), V bridge (2) 112 and V bias 113 . Both chips have similar features, but each version supports a different interconnect layout.
  • Figure 16 shows the chip leadframe and wire bond diagram on the left side.
  • the rectangular frame 143 is the base island of the chip lead frame and is made of copper or other conductive material, and the base island 143 is connected to the ground end 140 of the sensor.
  • the magnetic sensor chips 101 and 101' are located at the upper portion of the base island 143, and the ASIC 130 is located at the lower portion of the base island 143.
  • the bonding of the chip to the base island may be performed by an adhesive having adhesive properties such as epoxy resin.
  • the magnetoresistive sensing chips 101 and 101' are arranged such that they have opposite polarity responses to each other for the same applied magnetic field, for example, the magnetization vectors of the pinned layer are rotated by 180 degrees with respect to each other and placed like the direction shown in the figure, So that the sensing direction of the device is parallel to the sensing axis 76.
  • the interconnect 118 connects the GND 111' of the ASIC to the GND end 140 of the island 143 to form the GND terminal;
  • Interconnect 119 connects V out on the ASIC to internal pin 141 to form output OUTPUT.
  • Interconnect 120 connects V CC to internal pin 142 to form the V CC terminal.
  • the base and inner pins are sealed in a plastic case, and the external pins are located outside the plastic case as the lead of the entire device.
  • 145 on the right shows the package outline of the reluctance switch product.
  • FIG 17 shows the chip leadframe and wire bond diagram on the left side.
  • the rectangular frame 143 is the base island of the chip lead frame and is made of copper or other conductive material, and the base island 143 is connected to the ground end 140 of the sensor.
  • the magnetic sensor chips 101 and 101' are located at the upper portion of the base island 143, and the ASIC 130 is located at the lower portion of the base island 143.
  • the bonding of the chip to the base island may be performed by an adhesive having adhesive properties such as epoxy resin.
  • the magnetic sensor chips 101 and 101' are arranged such that they have opposite polarity responses to each other for the same applied magnetic field, for example, the magnetization vectors of the pinned layer are rotated 180 degrees relative to each other and placed like the direction shown in the figure, The sensing direction of the device is parallel to the sensing axis 76.
  • the interconnection 118 connects the GND 111' of the ASIC to the GND terminal 140 of the island 143 to form GND.
  • the interconnect 119 connects V out on the ASIC to the internal pin 141 to form the OUTPUT terminal.
  • Interconnect 120 connects V CC to internal pin 142 to form the V CC terminal.
  • the base and inner pins are sealed in a plastic case, and the external pins are located outside the plastic case as the lead of the entire device.
  • 146 is the package outline of the push-pull half-bridge reluctance switch.
  • the left side of Figure 18 shows the chip leadframe and wire bond diagram.
  • the rectangular frame 143 is the base island of the chip lead frame and is made of copper or other conductive material, and the base island 143 is connected to the ground end 140 of the sensor.
  • the magnetic sensor chips 101 and 101' are located at the upper portion of the base island 143, and the ASIC 130 is located at the lower portion of the base island 143.
  • the bonding of the chip to the base island may be performed by an adhesive having adhesive properties such as epoxy resin.
  • the magnetic sensor chips 101 and 101' are arranged such that they have opposite polarity responses to each other for the same applied magnetic field, for example, the magnetization vectors of the pinned layer are rotated 180 degrees relative to each other and placed like the direction shown in the figure, The sensing direction of the device is parallel to the sensing axis 76 in the figure.
  • the interconnection 118 connects the GND 111' of the ASIC to the GND terminal 140 of the island 143 to form GND.
  • the interconnect 119 connects V out on the ASIC to the internal pin 141 to form the OUTPUT terminal.
  • Interconnect 120 connects V CC to internal pin 142 to form the V CC terminal.
  • the base and inner pins are sealed in a plastic case, and the external pins are located outside the plastic case as the lead of the entire device.
  • the 145 on the right shows the package outline of the push-pull half-bridge reluctance switch.
  • FIG 19 shows the chip leadframe and wire bond diagram on the left side.
  • the rectangular frame 143 is the base island of the chip lead frame and is made of copper or other conductive material, and the base island 143 is connected to the ground end 140 of the sensor.
  • the magnetic sensor chips 101 and 101' are located at the upper portion of the base island 143, and the ASIC 130 is located at the lower portion of the base island 143.
  • the bonding of the chip to the base island may be performed by an adhesive having adhesive properties such as epoxy resin.
  • the magnetic sensor chips 101 and 101' are arranged such that they have opposite polarity responses to each other for the same applied magnetic field, for example, the magnetization vectors of the pinned layer are rotated 180 degrees relative to each other and placed like the direction shown in the figure, The sensing direction of the device is parallel to the sensing axis 76 in the figure.
  • the interconnection 118 connects the GND 111' of the ASIC to the GND terminal 140 of the island 143 to form GND.
  • the interconnect 119 connects V out on the ASIC to the internal pin 141 to form the OUTPUT terminal.
  • Interconnect 120 connects V CC to internal pin 142 to form the V CC terminal.
  • the base and inner pins are sealed in a plastic case, and the external pins are located outside the plastic case as the lead of the entire device.
  • 146 is the package outline of the push-pull half-bridge reluctance switch.

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Abstract

一种推挽式半桥磁阻开关，包括两个磁传感芯片（101，102），每个磁传感芯片具有一个磁感应电阻器（108）以及磁感应电阻器的电气连接焊盘。所述两个磁传感芯片电气互连，二者感应方向相反且平行，构成推挽式半桥电路。所述磁感应电阻器包括一个或多个串联连接的磁电阻元件（40）。所述磁感应电阻器的焊盘位于所述磁传感芯片的相邻边，且每一焊盘能够容纳至少两个焊线的焊接。该磁阻开关能提高传感器的灵敏度，减小输出电压的偏差以及输出电压随温度的漂移，有利于减小开关传感器的体积并且提高开关传感器的性能。

Description

推挽式芯片翻转半桥磁阻开关
技术领域
本发明涉及一种在单一封装中含多个芯片的磁阻传感器产品。更具体地，本发明涉及一种推挽式芯片翻转半桥磁阻开关。
背景技术
磁性开关传感器广泛用于消费电子、白色家电、三表（电表、水表、气表）、汽车以及工业 应用等领域。 目前主流的磁性开关传感器有霍尔传感器和各向异性磁阻（ AMR ）传感器。在消费电子和三表应用领域，霍尔开关传感器和 AMR 开关传感器的功耗可达几微安，这是牺牲其工作频率的情况下获得的，其工作频率为十几赫兹，其开关点为几十高斯；在汽车、工业应用等需要高工作频率的环境，霍尔开关传感器和 AMR 开关传感器的功耗为毫安级，其工作频率为千赫兹级。
以磁性隧道结（ MTJ ）元件为敏感元件的传感器是近年来开始工业应用的新型磁电阻效应传感器，它利用的是磁性多层膜材料的隧道磁电阻效应，主要表现在磁性多层膜材料中随着外磁场大小和方向的变化，磁性多层膜的电阻发生明显变化。在消费电子和三表等低功耗应用领域，以 MTJ 元件为敏感元件的开关传感器在工作频率为千赫兹时的功耗为微安级，开关点为十几高斯；在汽车、工业应用等需要高工作频率的环境，以 MTJ 元件为敏感元件的开关传感器的工作频率可达兆赫兹，功耗仅为微安级别。
由于现有开关传感器无论在休眠或工作状态功耗都较高，且工作频率低，为此需要一种高灵敏度，无论在休眠或工作状态功耗低，响应频率高，体积小的开关传感器。
发明内容
现有的开关传感器无论在休眠或工作状态功耗都较高，且工作频率低，为此需要一种高灵敏度，无论在休眠或工作状态功耗低，响应频率高，体积小的开关传感器。本发明提出了一种推挽式芯片翻转半桥磁阻传感器，可以提高传感的性能。
为了是实现上述目的，本发明 一方面 提供一种 推挽式半桥磁阻开关，包括两个磁传感芯片，每个磁传感芯片具有一个磁感应电阻器以及磁感应电阻器的用于电气连接的焊盘。两个磁传感芯片电气互连，二者感应方向相反且平行，构成推挽式半桥电路。磁感应电阻器包括一个或多个串联连接的磁电阻元件，所述磁感应电阻器的焊盘位于所述磁传感芯片的相邻的两个边上，且每一焊盘能够容纳至少两个焊线的焊接。
本发明提 出的方案是，推挽式半桥磁阻开关包括两个磁感应电阻，每个磁感应电阻在各自独立的芯片上，构成独立的磁传感芯片。磁传感芯片之一相对于另一个磁传感芯片在感应平面内旋转了 180 °，实现了半桥形式的输出电路。这种半桥电路外围可以连接诸如电源调整电路、放大电路、数字开关控制电路等特定的驱动电路。这两个磁传感芯片带有用于引线键合的焊盘，磁阻磁传感芯片和其他电路通过引线键合的方式实现电气连接。
进一步地，上述推挽式半桥磁阻该开关还包括至少一个用于将推挽式半桥电路的输出信号转换成开关信号的 ASIC 。
进一步地，每个磁传感芯片包括至少三个电气连接点。
更进一步地，上述推挽式半桥磁阻该开关至少包括电源端子，接地端子和输出端子，通过导电的引线框架上的键合点、引线框架上的键合引线，实现各端子与所述磁传感芯片以及 ASIC 的连接。
本发明另一方面提供一种推挽式半桥磁阻开关，包括两个磁传感芯片，每个磁传感芯片具有一个磁感应电阻器以及磁感应电阻器的用于电气连接的焊盘。两个磁传感芯片电气互连，二者感应方向相反且平行，构成推挽式半桥电路。磁感应电阻器包括一个或多个串联连接的磁电阻元件，所述磁感应电阻器的焊盘位于所述磁传感芯片角落处，且位于对角的焊盘与磁感应电阻器的同一端子电气连接。
优选地，上述推挽式半桥磁阻开关，还包括至少一个用于将所述推挽式半桥电路的输出信号转换成开关信号的 ASIC 。
在一具体实施例中，每个磁传感芯片至少有三个电气连接点。
优选地，上述推挽式半桥磁阻开关 至少包括电 源端子，接地端子和输出端子，通过导电的引线框架以及引线框架上的引线，实现端子与所述磁传感芯片以及 ASIC 的连接。
优选地，磁电阻元件是 MTJ 元件。
优选地， 磁电阻元 件是 GMR 元件。
优选地，磁电阻元件是 AMR 元件。
优选地，磁电阻元件利用片上永磁体进行磁偏置。
优选地，磁电阻元件利用堆栈进行磁偏置。
优选地，磁电阻元件利用形状各向异性进行磁偏置。
优选地，两个磁传感芯片被布置为感应轴方向相同，并且感应轴的方向与两个磁传感芯片中心之间的连线平行或垂直。
根据本发明的推挽式半桥磁阻开关可以达到的有益效果有：推挽半桥的结构能提高传感器的灵敏度；两个传感器芯片可以较好地匹配，减小输出电压的偏差，并且减小输出电压随温度的漂移；新颖的封装和引线键合方式有利于减小开关传感器的体积并且提高开关传感器的性能。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术方案，并可依照说明书的内容予以实施，以下以本发明的优选实施例并配合附图详细说明如后。本发明的具体实施方式由以下实施例详细给出。
附图说明
此处所说明的附图用来提供对本发明的进一步理解，构成本申请的一部分，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图 1 是连到电表的 MTJ 元件的横截面示意图。
图 2 是串联的 MTJ 元件构成的磁电阻元件串的横截面示意图。
图 3 是位于两个永磁体之间的 MTJ 元件的透视图。
图 4 是磁感应电阻与外加磁场的关系图。
图 5 是 TMR 元件构成的半桥电路的电压与外加磁场的关系图。
图 6 是根据 本发明中 的包括磁传感芯片和 ASIC 的推挽式半桥磁阻开关的电路框图。
图 7 （ a ）和（ b ）是根据本发明第一实施例的磁传感芯片的代表电路图和顶视图 。
图 8 是图 7 （ b ）所示磁传感芯片的部分细节图。
图 9 是根据本发明第二实施例的磁传感芯片的顶视图。
图 10 是根据本发明第三实施例的磁传感芯片的顶视图。
图 11 是根据本发明第四实施例的磁传感芯片的顶视图。
图 12 是根据本发明第五实施例的磁传感芯片的顶视图。
图 13 （ a ）和（ b ）是根据本发明第一类型和第二类型的半桥电路的电路原理图。
图 14 根据本发明的另一种磁阻开关电路的电路框图。
图 15 （ a ）和（ b ）展示了 ASIC 的焊盘的两种分布方式 。
图 16 显示了根据本发明的第一种磁阻传感器磁传感芯片封装形式。
图 17 显示了第二种磁阻传感器磁传感芯片封装形式。
图 18 显示了第三种磁阻传感器磁传感芯片封装形式
图 19 显示了第四种磁阻传感器磁传感芯片封装形式
具体实施方式
下面将参照附图对本发明的优选实施例进行说明。
图 1 是连接到电表的 MTJ 元件的横截面示意图，其示出 MTJ 元件的结构和电子测量原理。 MTJ 1 包括钉扎层 2 、隧道势垒层 5 和铁磁层 6 ，也称敏感层 6 。钉扎层 2 由铁磁层 4 ，也称被钉扎层 4 和反铁磁层 3 构成，铁磁层 4 和反铁磁层 3 之间的交换耦合作用决定了铁磁层 4 的磁化方向。隧道势垒层 5 通常由 MgO 或 Al2O3 构成，位于铁磁层 4 的上部。铁磁层 6 位于隧道势垒层 5 的上部。箭头 8 和箭头 7 分别代表被钉扎层 4 和敏感层 6 的磁化矢量。被钉扎层 4 的磁化矢量 8 在一定大小的磁场作用下是相对固定的，敏感层 6 的磁化矢量 7 相对于被钉扎层 4 的磁化矢量 8 的是相对自由且可旋转的。 为了减小磁滞效应，可以添加一个垂直于感应方向的磁场，交叉轴偏置场 Hbias （详细描述见第 34 段）。对于减少磁滞效应，磁感应层的磁化矢量 7 需要有一个平稳的转动。反铁磁层 3 、铁磁层 4 、隧道势垒层 5 和铁磁层 6 各层的典型厚度为 0.1 nm 到 100 nm 之间。
下电极层 16 和上电极层 17 分别与反铁磁层 3 和敏感层 6 连接。电极层 16 ， 17 通常采用非磁性导电材料，能够携带电流输入欧姆计 18 。欧姆计 18 在 MTJ 两个电极层之间加一固定的电势或电流，并相应产生出一电流值或电压值，从而计算出 MTJ 的电阻值。通常情况下，隧道势垒层 5 提供了器件的大多数电阻，约为 1000 欧姆，而所有导体的阻值约为 10 欧姆。底电极层 16 形成于绝缘基片 9 上方，绝缘基片 9 的边缘要超过底电极层 16 的边缘。绝缘基片 9 形成在基底基片 10 的上方。基底基片的材料可以是例如，硅，也可以是石英、耐热玻璃、 GaAs 、 AlTiC 等可以集成晶圆的材料。硅由于其易于加工为集成电路，尽管磁传感器不总是需要这种电路，所以成为最好的选择。
图 2 示出由串联的 MTJ 元件形成的电阻臂的横截面示意图。
由于尺寸小， MTJ 元件能够串联连接成 MTJ 元件串以增加灵敏度，减少 1/F(1/ 频率 ) 噪声，同时可以提高其静电放电 ESD 性能，见图 2 。 MTJ 元件 40 在底电极 41 和顶电极 42 中间，三者形成三明治结构。电流 43 垂直流过 MTJ 元件 40 ，然后再水平流过底电极 41 或顶电极 42 ，继而再垂直流过相邻的 MTJ 元件，如此交替构成了 MTJ 元件串的电流通路。底电极 41 在绝缘基片 9 的上方，如果有必要，绝缘基片下方可以增加一层基底基片 10 。在构成传感器的桥式电路中，有参考臂和感应臂，参考臂的电阻值不随外加磁场的变化而变化，而感应臂的电阻值随外加磁场的变化而变化。如果使参考臂和感应臂的 MTJ 元件具有相同的尺寸，可以使器件的性能不受制作工艺中刻蚀步骤的影响。同时，每一串上的 MTJ 元件数量可以不同，这能使在参考臂和感应臂上设置的电阻比值达到最佳。
芯 片上的永磁铁设计
接下来将介绍一种提供 Hbias 的方法， 如图 3 所示， MTJ 元件 70 固定在两个永磁铁 71 中间，两个永磁铁定位在芯片上。考虑到清晰度，在图中就没有显示出在半导体基片底部上构造的顶层。例如条形的永磁铁 71 具有宽度（ W ） 73 ，厚度（ t ） 74 和长度（ Ly ） 75 ，其间具有间隙（ Gap ） 72 。条形永磁铁用于提供在基片面内、其方向垂直于敏感轴或者 Y 轴 76 的交叉偏置场。这个方向被称为交叉轴或直接称为 X 轴 78 。磁电阻元件 70 被设计成具有短轴 WMR 82 、长轴 LMR 83 的椭圆形状。磁电阻元件的横截面 70 ，如图 3 所示。条形永磁铁首先用强磁场进行充磁，它们的剩余磁化强度 MPM 77 能与 MTJ 元件的敏感轴或者 Y 轴 76 大致垂直，与交叉轴或者 X 轴 78 大致平行，并位于 X-Y 面内。此处 X 轴和 Y 轴是标准正交的笛卡尔坐标轴， Z 轴是基片的法线方向。 X-Y 平面也称作为感应面。
图 4 是单个磁感应电阻器的电阻值与外加磁场的关系图。如图 4 （ a ）所示，当外加磁场 20 的方向与如虚线所示的钉扎层 2 的磁矩方向平行，且外加磁场的强度值大于 H1 时，如实线所示的敏感层 6 的磁矩方向与外加磁场 20 的方向平行，进而与钉扎层 2 的磁化矢量方向平行，这时 MTJ 元件的电阻最小。当外加磁场 20 的方向与钉扎层 2 的磁化矢量方向反平行时，同时外加磁场的强度大于 H2 时，敏感层 6 的磁矩方向与外加磁场 20 的方向平行，进而与钉扎层 2 的磁化矢量方向反平行，这时 MTJ 的电阻最大。 H1 与 H2 之间的磁场范围就是 MTJ 元件的测量范围。当将图 4 （ a ）所对应的磁感应电阻在感应平面内旋转 180 °而施加与图 4 （ a ）相同的外加磁场时，得到的关系曲线如图 4 （ b ）所示。
若将两个磁感应电阻器串联，形成一个半桥电路，把其中的一个磁感应电阻器在感应平面内进行 180 °的旋转，以使串联连接的两个磁感应电阻器分别具有如图 4 （ a ）和 4 （ b ）的响应曲线。该半桥电路的两个磁感应电阻器对相同的外加磁场具有相反的极性响应，并被称为推挽式半桥，因为当一个磁感应电阻器的电阻值增加时，另外一个磁感应电阻器的电阻值减小。这种推挽式芯片翻转半桥磁阻传感器的输出如图 5 中的曲线 21 所示。这是一个推挽式半桥电路输出电压（ V ）与外加磁场的 H 20 的曲线。对于数值大的正向磁场 +H ，推挽式半桥电路的输出电压为最大值 Vmax25 。对于数值大的负向磁场 -H ，推挽式半桥电路的输出电压为最小值 Vmin23 。在外加磁场为零时，推挽式半桥电路的输出电压为中间值 V mid 24 ， Vmid 大约为 Vmax 和 Vmin 的平均值。可以用电压表测量推挽式半桥电路的输出，该输出可以作为信号处理电路如磁阻开关电路的输入。
图 6 显示根据 本发明中 的包括磁传感芯片和 ASIC 的推挽式半桥磁阻开关的电路框图 。其输出特性如图 5 所示的推挽式半桥电路可以用来构成磁阻开关的'磁电阻传感器 (MR Sensor) ' 87 。该推挽式半桥电路有三个连接端子，分别是电源端子 Vbias 、接地端子 GND 和半桥输出端子 Vbridge 。半桥输出端子的输出 Vbridge 如图 5 中的曲线 21 所示。图 6 所示的推挽式半桥磁阻开关除 MR Sensor 部分的电路均可以集成在一个用于将推挽式半桥电路的输出信号转换成开关信号的 ASIC 中。该 ASIC 例如包括稳压电路 83 ，内部参考电路 86 ，多路复用器 88 ，低通滤波器 91 ，以及其后依次连接的比较电路 61 ，数字控制电路 92 以及锁存和驱动电路 93 等。 MR Sensor 的具体结构将在后面进行说明，图 14 中显示了在此开关电路中的芯片与芯片的连接。下面将首先描述本发明的磁传感芯片的物理布局。
每一磁感应电阻器由大量的 MTJ 元件构成。磁感应电阻器位于基底基片 10 上，基片材料通常是硅，也可以是玻璃、印刷电路板、氧化铝、陶瓷等材料。通过光刻等制造工艺，可以在例如硅晶圆上的某个长方形区域内制造出大量相同的磁感应电阻器，然后利用晶圆切割、激光切割等不损坏芯片的方法，将这些位于同一晶圆上的大量的器件分离成单独的器件，分离后的每个器件称为一个磁传感芯片。切割工艺决定了磁传感芯片的外形，通常情况下，芯片的外形是矩形的。如果同一晶圆上生产的芯片种类较多，会加大芯片的生产、测试和封装的难度。因此，为了达到更好的经济效益，同一晶圆上生产的器件应尽量相同。而本发明中的推挽式半桥电路中的两个磁传感芯片优选采用同样的器件，由此来简化生产步骤，提高经济效益。然而在应用时，需要解决下面两个难点：如何与例如图 6 所示的开关中其他电路，如线性放大电路、 A/D 转换电路、电源电路、控制电路等匹配，以构成正常工作的开关；以及如何在 MR Sensor 中这两个磁传感芯片被布置为使得其具有相反的极性响应。
根据本发明的技术方案，将串联的两个磁传感芯片之一进行旋转，来构成一个推挽式半桥电路。图 7 （ a ）和（ b ）显示了由磁感应电阻器构成的磁传感芯片的代表电路图和顶视图，磁感应电阻器是由串联连接的 MTJ 元件构成的磁电阻元件串。框图 102 为磁传感芯片的磁学和电路示意图，一个磁感应电阻器 108 有两个端子，例如，根据图上的位置，钉扎层的磁化矢量 8 所指向的端子被命名为'顶端' 1.1 ，另一端被命名为'底端' 2.1 。每一端有两个电气上互连的端子，顶端 1.1 与电气端子 1.2 相连，底端 2.1 与电气端子 2.2 相连，各端以及电气上互连的端子用正方形或者圆形表示，其中圆形电气端子与顶端对应，并对应于圆焊盘 104 ，通过这个圆焊盘来辨别磁感应电阻器的方向。黑色箭头 8 代表钉扎层的磁化矢量的方向，箭头 7 是在某一外加磁场（如图 5 中 20 ）下敏感层磁化矢量的方向，感应轴 76 与钉扎层的磁化矢量 8 平行。
图 7 （ b ）中的矩形芯片 101 是磁传感芯片，图 7 （ b ）具有根据本发明实施例 1 的物理布局。该芯片具有四个焊盘 103 - 106 ，对应 7 （ a ）中的端子 1.1 ， 1.2 ， 2.1 ， 2.2 。焊盘 104 是圆形的，而其他三个焊盘是正方形的。这样的布局可以起到识别芯片方向、辨别感应轴的符号和方向的作用。永磁铁 71 提供交叉轴偏置场 Hbias 。一个磁感应电阻 108 由许多串联的 MTJ 元件 40 构成。顶电极 42 用来实现焊盘和磁电阻元件串之间、磁电阻元件串和磁电阻元件串之间的电气连接。
图 8 是图 7 （ b ）的局部放大示意图。椭圆形的实线 40 是 MTJ 元件，长方形 41 是底电极，长方形 42 是顶电极。图 7 和图 8 一起构成了本发明实施例 1 磁传感芯片的顶视图。下面的各实施例均采取这种电气互联方式，后面将不再赘述。图 9-12 分别示出了根据本发明实施例 2 至实施例 5 的磁传感芯片的布局，其中磁电阻串的个数可不同， MTJ 元件尺寸可不同，焊盘的大小和位置可不同。
图 9 中的矩形芯片 101 是磁传感芯片，具有根据本发明实施例 2 的物理布局。该芯片具有四个焊盘 103 - 106 ，是电气连接点的物理实施例。例如，焊盘 104 ，对应端子 1.2 ，具有圆形的形状，而其他三个焊盘是正方形的。永磁体 71 提供交叉轴偏置场 Hbias 。一个磁感应电阻 108 由许多串联的 MTJ 元件 40 构成。顶电极 42 用来实现焊盘和磁电阻元件串之间、磁电阻元件串和磁电阻元件串之间的电气连接。
图 10 中的矩形芯片 101 是磁传感芯片，具有根据本发明实施例 3 的物理布局。该芯片具有四个焊盘 103 - 106 ，是电气连接点的物理实施例。例如，焊盘 104 ，对应端子 1.2 ，有圆形的形状，而其他三个焊盘是正方形的。永磁体 71 提供交叉轴偏置场 Hbias 。一个磁感应电阻 108 由许多串联的 MTJ 元件 40 构成。顶电极 42 用来实现焊盘和磁电阻元件串之间、磁电阻元件串和磁电阻元件串之间的电气连接。
图 11 中的矩形芯片 101 是磁传感芯片，具有根据本发明实施例 4 的物理布局。该芯片具有四个焊盘 103 - 106 ，是电气连接点的物理实施例。例如，焊盘 104 ，对应端子 1.2 ，具有圆形的形状，而其他三个焊盘是正方形的。永磁体 71 提供交叉轴偏置磁 Hbias 。一个磁感应电阻 108 由许多串联的 MTJ 元件 40 构成。顶电极 42 用来实现焊盘和磁电阻元件串之间、磁电阻元件串和磁电阻元件串之间的电气连接。
图 12 中的矩形芯片 101 是磁传感芯片，具有根据本发明实施例 5 的物理布局。该芯片 101 具有两个焊盘，相对于以上的各实施例，该实施例 5 芯片的每个焊盘被拉长，以容纳两个电气连接点。例如，焊盘 109 包含端子 1.1 和 1.2 对应的焊接点 ，焊盘 110 包含端子 2.1 和 2.2 对应的焊接点。永磁体 71 提供交叉轴偏置场 Hbias 。一个磁感应电阻 108 由许多串联的 MTJ 元件 40 构成。顶电极 42 用来实现焊盘和磁电阻元件串之间、磁电阻元件串和磁电阻元件串之间的电气连接。
图 13 （ a ）和 13 （ b ）是根据本发明第一类型和第二类型的'芯片翻转形成的半桥电路'的电路原理图，显示了两个磁传感芯片 101 和 101' 在感应平面内进行 180 度旋转和放置的两种方法的电学和磁学的示意图。这两种配置由芯片的中心点矢量方向和感应轴之间的关系来描述。配置 118 中，两磁传感芯片的感应轴与磁传感芯片中心之间的连线互相平行。配置 119 中，两磁传感芯片的感应轴与磁传感芯片中心之间的连线互相垂直。像上面所述一样，感应轴 76 与每个磁传感芯片上的黑箭头平行。
配置 118 和配置 119 分别有三个电气终端： GND 111 ， Vbridge 112 ， Vbias 113 。另外，还有一些电气连接线 114 - 117 ，这些线也可称为焊线，可以作为芯片内部焊盘到器件外部焊盘的电气连接线。通过连接线 117 ，两个芯片 101 和 101' 构成了串联结构，位于半桥电路低端的磁传感芯片通过连接线 114 连接到 GND 。位于半桥电路高端的磁传感芯片通过连接线 116 连接到电源 Vbias ，半桥电路的输出通过连接线 115 连接到输出端 Vbridge 。
图 14 是图 6 改进的推挽式半桥磁阻开关的电路方框图，其中添加了图 13 中的芯片翻转形成的半桥电路。图 14 中框线 87 是芯片翻转形成的半桥电路的电路框图，框线 130 是图 6 所示的 ASIC 电路框图，将 ASIC 电路图中的连接点 GND 111 ， Vbridge 112 和 Vbias 113 分别与半桥电路对应端子相连，即可完成半桥电路和 ASIC 电路的互连。 ASIC 的外部端子有： VCC 81 、 Vout 85 以及 GND 111'，位于图右侧。GND111 和 GND111' 可以通过一根集成在芯片上的长的键合线相连，或者在一个大焊盘上实现 GND111 和 GND111' 两个接地点。
图 15 是图 14 中 ASIC 焊盘的两种分布方式的顶视图。图 15 （ a ）是第一种方式形成的 ASIC130 ，它具有以下焊盘： VCC 81 ， Vout 85 ， GND 111 和 111 ' ， Vbridge 112 和 Vbias 113 。图 15 （ b ）是第二种方式形成的 ASIC130' 。它具有以下的焊盘： VCC 81 、 Vout85 、 GND111 和 111' （两个独立的焊盘）， Vbridge （ 2 个） 112 和 Vbias113 。这两种芯片具有相似的功能，但每个版本支持不同的互连布局。
要形成一个完整的磁阻开关，需要将例如 ASIC 的集成电路和两个磁阻传感芯片封装为一个单一的三端封装件。下面参照图 16-19 来描述根据本发明的一些可能的封装方法。
图 16 左侧所示为芯片引线框架和引线键合图。矩形框 143 是芯片引线框架的基岛，由铜或者其他导电材料制作而成，基岛 143 与传感器的接地端 140 相连。磁传感芯片 101 和 101' 位于基岛 143 的上部， ASIC130 位于基岛 143 的下部，芯片与基岛的粘结可以用环氧树脂等具有粘合性能的胶。磁阻传感芯片 101 和 101' 被布置为使得对于相同的外加磁场二者具有彼此相反的极性响应，例如钉扎层的磁化矢量相对彼此旋转 180 度，并像图所示方向那样放置，以使器件的感应方向平行于感应轴 76 。除了连接磁芯片 101 、 101' 和 ASIC130 这样的互连线 114-117 外，还有另外三根互连线：互连线 118 连接 ASIC 的 GND111' 到基岛 143 的 GND 端 140 ，形成 GND 端；互连线 119 连接 ASIC 上的 Vout 到内引脚 141 ，形成输出端 OUTPUT 。 互连线 120 连接 VCC 到内引脚 142 上，形成 VCC 端。当焊线完成时，基岛和内引脚都是封在塑料壳里，在而外部引脚位于塑料壳外部，作为整个器件的引出脚。右图中 145 为磁阻开关产品的封装外形。
图 17 左侧所示为芯片引线框架和引线键合图。矩形框 143 是芯片引线框架的基岛，由铜或者其他导电材料制作而成，基岛 143 与传感器的接地端 140 相连。磁传感芯片 101 和 101' 位于基岛 143 的上部， ASIC130 位于基岛 143 的下部，芯片与基岛的粘结可以用环氧树脂等具有粘合性能的胶。磁传感芯片 101 和 101' 被布置为使得对于相同的外加磁场二者具有彼此相反的极性响应，例如钉扎层的磁化矢量相对彼此旋转 180 度，并像图所示方向那样放置，以使器件的感应方向平行于感应轴 76 。除了连接磁传感芯片 101 、 101' 和 ASIC130 这样的互连线 114-117 外，还有另外三根互连线：互连线 118 连接 ASIC 的 GND111' 到基岛 143 的 GND 端 140 ，形成 GND 端；互连线 119 连接 ASIC 上的 Vout 到内引脚 141 ，形成 OUTPUT 端。 互连线 120 连接 VCC 到内引脚 142 上，形成 VCC 端。当焊线完成时，基岛和内引脚都是封在塑料壳里，在而外部引脚位于塑料壳外部，作为整个器件的引出脚。右图中 146 为推挽式半桥磁阻开关的封装外形。
图 18 左侧所示为芯片引线框架和引线键合图。矩形框 143 是芯片引线框架的基岛，由铜或者其他导电材料制作而成，基岛 143 与传感器的接地端 140 相连。磁传感芯片 101 和 101' 位于基岛 143 的上部， ASIC130 位于基岛 143 的下部，芯片与基岛的粘结可以用环氧树脂等具有粘合性能的胶。磁传感芯片 101 和 101' 被布置为使得对于相同的外加磁场二者具有彼此相反的极性响应，例如钉扎层的磁化矢量相对彼此旋转 180 度，并像图所示方向那样放置，以使器件的感应方向平行于图中的感应轴 76 。除了连接磁传感芯片 101 、 101' 和 ASIC130 这样的互连线 114-117 外，还有另外三根互连线：互连线 118 连接 ASIC 的 GND111' 到基岛 143 的 GND 端 140 ，形成 GND 端；互连线 119 连接 ASIC 上的 Vout 到内引脚 141 ，形成 OUTPUT 端。 互连线 120 连接 VCC 到内引脚 142 上，形成 VCC 端。当焊线完成时，基岛和内引脚都是封在塑料壳里，在而外部引脚位于塑料壳外部，作为整个器件的引出脚。右图中 145 为推挽式半桥磁阻开关的封装外形。
图 19 左侧所示为芯片引线框架和引线键合图。矩形框 143 是芯片引线框架的基岛，由铜或者其他导电材料制作而成，基岛 143 与传感器的接地端 140 相连。磁传感芯片 101 和 101' 位于基岛 143 的上部， ASIC130 位于基岛 143 的下部，芯片与基岛的粘结可以用环氧树脂等具有粘合性能的胶。磁传感芯片 101 和 101' 被布置为使得对于相同的外加磁场二者具有彼此相反的极性响应，例如钉扎层的磁化矢量相对彼此旋转 180 度，并像图所示方向那样放置，以使器件的感应方向平行于图中的感应轴 76 。除了连接磁传感芯片 101 、 101' 和 ASIC130 这样的互连线 114-117 外，还有另外三根互连线：互连线 118 连接 ASIC 的 GND111' 到基岛 143 的 GND 端 140 ，形成 GND 端；互连线 119 连接 ASIC 上的 Vout 到内引脚 141 ，形成 OUTPUT 端。 互连线 120 连接 VCC 到内引脚 142 上，形成 VCC 端。当焊线完成时，基岛和内引脚都是封在塑料壳里，在而外部引脚位于塑料壳外部，作为整个器件的引出脚。右图中 146 为推挽式半桥磁阻开关的封装外形。
以上借助优选实施例对本发明进行了详细说明，但是本发明不限于此。本技术领域技术人员可以根据本发明的原理进行各种修改。因此，凡按照本发明原理所作的修改，都应当理解为落入本发明的保护范围。

Claims (15)

1 ．一种推挽式半桥磁阻开关，包括两个磁传感芯片，每个磁传感芯片具有一个磁感应电阻器以及磁感应电阻器的用于电气连接的焊盘，其特征在于：
所述两个磁传感芯片电气互连， 二者感应方向相反且平行，构成推挽式半桥电路，
所述磁感应电阻器包括一个或多个串联连接的磁电阻元件，
所述磁感应电阻器的焊盘位于所述磁传感芯片的相邻的两个边上，且每一焊盘能够容纳至少两个焊线的焊接。
2 ．根据权利要求 1 所述的推挽式半桥磁阻开关，其特征在于：该开关还包括至少一个用于将所述推挽式半桥电路的输出信号转换成开关信号的 ASIC 。
3 ．根据权利要求 1 所述的推挽式半桥磁阻开关，其特征在于：每个磁传感芯片包括至少三个电气连接点。
4 ．根据权利要求 2 所述的推挽式半桥磁阻开关，其特征在于：该开关至少包括电源端子，接地端子和输出端子，通过导电的引线框架上的键合点、引线框架上的键合引线，实现各端子与所述磁传感芯片以及 ASIC 的连接。
5 ．一种推挽式半桥磁阻开关，包括两个磁传感芯片，每个磁传感芯片具有一个磁感应电阻器以及磁感应电阻器的用于电气连接的焊盘，其特征在于：
所述两个磁传感芯片电气互连，二者感应方向相反且平行，构成推挽式半桥电路，
所述磁感应电阻器包括一个或多个串联连接的磁电阻元件，
所述磁感应电阻器的焊盘位于所述磁传感芯片角落处，且位于对角的焊盘与磁感应电阻器的同一端子电气连接。
6 ．根据权利要求 5 所述的推挽式半桥磁阻开关，其特征在于：该开关还包括至少一个用于将所述推挽式半桥电路的输出信号转换成开关信号的 ASIC 。
7 ．根据权利要求 5 所述的推挽式半桥磁阻开关，其特征在于：每个磁传感芯片至少有三个电气连接点。
8 ．根据权利要求 6 所 述的推挽式半桥磁阻开关，其特征在于：该开关至少包括电 源端子，接地端子和输出端子，通过导电的引线框架以及引线框架上的引线，实现端子与所述磁传感芯片以及 ASIC 的连接。
9 ．根据权利要求 1 或 5 所述的推挽式半桥磁阻开关，其特征在于：所述磁电阻元件是 MTJ 元件。
10 ．根据权利要求 1 或 5 所述的推挽式半桥磁阻开关，其特征在于：所述磁电阻元 件是 GMR 元件。
11 ．根据权利要求 1 或 5 所述的推挽式半桥磁阻开关，其特征在于：所述磁电阻元件是 AMR 元件。
12 ．根据权利要求 1 或 5 所述的推挽式半桥磁阻开关，其特征在于：所述磁电阻元件利用片上永磁体进行磁偏置。
13 ．根据权利要求 1 或 5 所述的推挽式半桥磁阻开关，其特征在于：所述磁电阻元件利用堆栈进行磁偏置。
14 ．根据权利要求 1 或 5 所述的推挽式半桥磁阻开关，其特征在于：所述磁电阻元件利用形状各向异性进行磁偏置。
15 ．根据权利要求 1 或 5 所述的推挽式半桥磁阻开关，其特征在于：所述两个磁传感芯片被布置为感应轴方向相同，并且感应轴的方向与两个磁传感芯片中心之间的连线平行或垂直。
PCT/CN2014/074574 2013-04-01 2014-04-01 推挽式芯片翻转半桥磁阻开关 Ceased WO2014161482A1 (zh)

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