WO2014184708A3 - Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v material - Google Patents

Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v material Download PDF

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Publication number
WO2014184708A3
WO2014184708A3 PCT/IB2014/061234 IB2014061234W WO2014184708A3 WO 2014184708 A3 WO2014184708 A3 WO 2014184708A3 IB 2014061234 W IB2014061234 W IB 2014061234W WO 2014184708 A3 WO2014184708 A3 WO 2014184708A3
Authority
WO
WIPO (PCT)
Prior art keywords
composition
cmp
chemical
polishing
mechanical polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2014/061234
Other languages
French (fr)
Other versions
WO2014184708A2 (en
Inventor
Yongqing Lan
Peter Przybylski
Zhenyu Bao
Julian PRÖLSS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF China Co Ltd
BASF SE
Original Assignee
BASF China Co Ltd
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF China Co Ltd, BASF SE filed Critical BASF China Co Ltd
Priority to SG11201509374WA priority Critical patent/SG11201509374WA/en
Priority to JP2016513471A priority patent/JP2016524325A/en
Priority to KR1020157035421A priority patent/KR20160009644A/en
Priority to CN201480027213.1A priority patent/CN105209563A/en
Priority to EP14797473.7A priority patent/EP2997104A4/en
Priority to US14/890,754 priority patent/US9765239B2/en
Publication of WO2014184708A2 publication Critical patent/WO2014184708A2/en
Publication of WO2014184708A3 publication Critical patent/WO2014184708A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a sub- strate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of -15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
PCT/IB2014/061234 2013-05-15 2014-05-06 Use of a chemical-mechanical polishing (cmp) composition for polishing a substrate or layer containing at least one iii-v material Ceased WO2014184708A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SG11201509374WA SG11201509374WA (en) 2013-05-15 2014-05-06 Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v material
JP2016513471A JP2016524325A (en) 2013-05-15 2014-05-06 Method of using a chemical mechanical polishing (CMP) composition for polishing a substrate or layer containing at least one III-V material
KR1020157035421A KR20160009644A (en) 2013-05-15 2014-05-06 Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v material
CN201480027213.1A CN105209563A (en) 2013-05-15 2014-05-06 Use of a chemical mechanical polishing (CMP) composition for polishing a substrate or layer containing at least one III-V material
EP14797473.7A EP2997104A4 (en) 2013-05-15 2014-05-06 Use of a chemical-mechanical polishing (cmp) composition for polishing a substrate or layer containing at least one iii-v material
US14/890,754 US9765239B2 (en) 2013-05-15 2014-05-06 Use of a chemical-mechanical polishing (CMP) composition for polishing a substrate or layer containing at least one III-V material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13167941 2013-05-15
EP13167941.7 2013-05-15

Publications (2)

Publication Number Publication Date
WO2014184708A2 WO2014184708A2 (en) 2014-11-20
WO2014184708A3 true WO2014184708A3 (en) 2015-06-25

Family

ID=48444174

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2014/061234 Ceased WO2014184708A2 (en) 2013-05-15 2014-05-06 Use of a chemical-mechanical polishing (cmp) composition for polishing a substrate or layer containing at least one iii-v material

Country Status (8)

Country Link
US (1) US9765239B2 (en)
EP (1) EP2997104A4 (en)
JP (1) JP2016524325A (en)
KR (1) KR20160009644A (en)
CN (1) CN105209563A (en)
SG (1) SG11201509374WA (en)
TW (1) TW201504411A (en)
WO (1) WO2014184708A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016097915A1 (en) * 2014-12-16 2016-06-23 Basf Se Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium
TWI775722B (en) 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and/or cobalt alloy comprising substrates
US10144850B2 (en) * 2015-09-25 2018-12-04 Versum Materials Us, Llc Stop-on silicon containing layer additive
WO2017170660A1 (en) 2016-03-30 2017-10-05 株式会社フジミインコーポレーテッド Method for producing cationically modified silica and cationically modified silica dispersion
JP6966458B2 (en) * 2016-09-30 2021-11-17 株式会社フジミインコーポレーテッド A method for producing cation-modified silica, a cation-modified silica dispersion, and a method for producing a polishing composition using cation-modified silica, and a polishing composition using cation-modified silica.
CN106590439B (en) * 2016-12-07 2019-02-05 中国电子科技集团公司第十一研究所 A kind of polishing liquid and method for polishing gallium antimonide wafer by using the polishing liquid
US11186748B2 (en) * 2017-09-28 2021-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them
CN109971357B (en) 2017-12-27 2021-12-07 安集微电子（上海）有限公司 Chemical mechanical polishing solution
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
US11718767B2 (en) * 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
CN109705737A (en) * 2018-12-28 2019-05-03 天津洙诺科技有限公司 A kind of GaAs polishing fluid and preparation method thereof
US10954411B2 (en) * 2019-05-16 2021-03-23 Rohm And Haas Electronic Materials Cmp Holdings Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide
US10787592B1 (en) * 2019-05-16 2020-09-29 Rohm And Haas Electronic Materials Cmp Holdings, I Chemical mechanical polishing compositions and methods having enhanced defect inhibition and selectively polishing silicon nitride over silicon dioxide in an acid environment
JP7667079B2 (en) * 2019-06-17 2025-04-22 株式会社フジミインコーポレーテッド Polishing composition
KR102525287B1 (en) * 2019-10-18 2023-04-24 삼성에스디아이 주식회사 Cmp slurry composition for polishing copper layer and method for polishing copper layer using the same
CN110788739A (en) * 2019-10-31 2020-02-14 云南北方昆物光电科技发展有限公司 Polishing method of indium antimonide single crystal wafer
US11525071B2 (en) * 2020-03-30 2022-12-13 Fujimi Incorporated Polishing composition based on mixture of colloidal silica particles
US20250215296A1 (en) * 2022-03-22 2025-07-03 Merck Patent Gmbh Negatively charged silica particles, method of producing such particles, compositions comprising such particles, and a method of chemical-mechanical polishing using such particles

Citations (4)

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US20050079718A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
WO2006028759A2 (en) * 2004-09-08 2006-03-16 Praxair S. T. Technology, Inc Aqueous slurry containing metallate-modified silica particles
EP1772503A2 (en) * 2005-09-30 2007-04-11 Sumitomo Electric Industries, Ltd. Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y crystal and GaxIn1-xAsyP1-y crystal substrate
WO2011093153A1 (en) * 2010-02-01 2011-08-04 Jsr株式会社 Aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method using same

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US3922393A (en) * 1974-07-02 1975-11-25 Du Pont Process for polishing silicon and germanium semiconductor materials
US5387796A (en) * 1993-05-26 1995-02-07 Epitaxx, Inc. Low leakage current photodetector arrays
US6627539B1 (en) * 1998-05-29 2003-09-30 Newport Fab, Llc Method of forming dual-damascene interconnect structures employing low-k dielectric materials
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US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US20070049164A1 (en) * 2005-08-26 2007-03-01 Thomson Clifford O Polishing pad and method for manufacturing polishing pads
EP1813656A3 (en) * 2006-01-30 2009-09-02 FUJIFILM Corporation Metal-polishing liquid and chemical mechanical polishing method using the same
US20100130013A1 (en) * 2008-11-24 2010-05-27 Applied Materials, Inc. Slurry composition for gst phase change memory materials polishing
JP2010269985A (en) 2009-05-22 2010-12-02 Fuso Chemical Co Ltd Sulfonic acid-modified aqueous anionic silica sol and process for producing the same
US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
JP2013080751A (en) * 2011-09-30 2013-05-02 Fujimi Inc Polishing composition
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050079718A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
WO2006028759A2 (en) * 2004-09-08 2006-03-16 Praxair S. T. Technology, Inc Aqueous slurry containing metallate-modified silica particles
EP1772503A2 (en) * 2005-09-30 2007-04-11 Sumitomo Electric Industries, Ltd. Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y crystal and GaxIn1-xAsyP1-y crystal substrate
WO2011093153A1 (en) * 2010-02-01 2011-08-04 Jsr株式会社 Aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method using same

Also Published As

Publication number Publication date
TW201504411A (en) 2015-02-01
US9765239B2 (en) 2017-09-19
CN105209563A (en) 2015-12-30
WO2014184708A2 (en) 2014-11-20
US20160096979A1 (en) 2016-04-07
JP2016524325A (en) 2016-08-12
EP2997104A2 (en) 2016-03-23
KR20160009644A (en) 2016-01-26
EP2997104A4 (en) 2017-01-25
SG11201509374WA (en) 2015-12-30

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