WO2014200985A3 - Chemical compositions for semiconductor manufacturing processes and/or methods, apparatus made with same - Google Patents

Chemical compositions for semiconductor manufacturing processes and/or methods, apparatus made with same Download PDF

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Publication number
WO2014200985A3
WO2014200985A3 PCT/US2014/041682 US2014041682W WO2014200985A3 WO 2014200985 A3 WO2014200985 A3 WO 2014200985A3 US 2014041682 W US2014041682 W US 2014041682W WO 2014200985 A3 WO2014200985 A3 WO 2014200985A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
chemical compositions
same
semiconductor manufacturing
manufacturing processes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2014/041682
Other languages
French (fr)
Other versions
WO2014200985A2 (en
Inventor
Horia M. Faur
Maria Faur
Mircea Faur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Specmat Inc
Original Assignee
Specmat Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Specmat Inc filed Critical Specmat Inc
Priority to CN201480044412.3A priority Critical patent/CN105453238B/en
Priority to EP14811622.1A priority patent/EP3008152B1/en
Priority to US14/897,633 priority patent/US20160122554A1/en
Publication of WO2014200985A2 publication Critical patent/WO2014200985A2/en
Publication of WO2014200985A3 publication Critical patent/WO2014200985A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/08—Anti-corrosive paints
    • C09D5/082—Anti-corrosive paints characterised by the anti-corrosive pigment
    • C09D5/084—Inorganic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)

Abstract

The present invention relates generally to the field of semiconductors and/or semiconductor structures (e.g., solar cells, etc.), to chemical compositions for manufacturing such semiconductors and/or semiconductor structures, and/or to methods for manufacturing such semiconductors and/or semiconductor structures. In another embodiment, the present invention relates to chemical compositions and methods for controlling surface passivation, dead layer etchback, anti-reflective, potential induced degradation, and other properties of semiconductor surfaces used for various semiconductor applications including, but not limited to, solar cells.
PCT/US2014/041682 2013-06-11 2014-06-10 Chemical compositions for semiconductor manufacturing processes and/or methods, apparatus made with same, and semiconductor structures with reduced potential induced degradation Ceased WO2014200985A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201480044412.3A CN105453238B (en) 2013-06-11 2014-06-10 Chemical compositions for semiconductor manufacturing processes and/or methods, devices made using same
EP14811622.1A EP3008152B1 (en) 2013-06-11 2014-06-10 Chemical composition for semiconductor manufacturing processes
US14/897,633 US20160122554A1 (en) 2013-06-11 2014-06-10 Chemical compositions for semiconductor manufacturing processes and/or methods, apparatus made with same, and semiconductor structures with reduced potential induced degradation

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361833706P 2013-06-11 2013-06-11
US61/833,706 2013-06-11
US201361834153P 2013-06-12 2013-06-12
US61/834,153 2013-06-12

Publications (2)

Publication Number Publication Date
WO2014200985A2 WO2014200985A2 (en) 2014-12-18
WO2014200985A3 true WO2014200985A3 (en) 2015-02-05

Family

ID=52022915

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2014/041682 Ceased WO2014200985A2 (en) 2013-06-11 2014-06-10 Chemical compositions for semiconductor manufacturing processes and/or methods, apparatus made with same, and semiconductor structures with reduced potential induced degradation

Country Status (5)

Country Link
US (1) US20160122554A1 (en)
EP (1) EP3008152B1 (en)
CN (1) CN105453238B (en)
TW (1) TWI626297B (en)
WO (1) WO2014200985A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10619097B2 (en) 2014-06-30 2020-04-14 Specmat, Inc. Low-[HF] room temperature wet chemical growth (RTWCG) chemical formulation
CN107507785B (en) * 2017-08-14 2019-08-23 通威太阳能（安徽）有限公司 A technology for reducing the isolation of the test anti-PID hydrophilic sheet

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5601656A (en) * 1995-09-20 1997-02-11 Micron Technology, Inc. Methods for cleaning silicon wafers with an aqueous solution of hydrofluoric acid and hydriodic acid
US6613697B1 (en) * 2001-06-26 2003-09-02 Special Materials Research And Technology, Inc. Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof
US6783695B1 (en) * 1999-06-29 2004-08-31 Micron Technology, Inc. Acid blend for removing etch residue
US20090192065A1 (en) * 2005-06-16 2009-07-30 Advanced Technology Materials, Inc. Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating
US20100101453A1 (en) * 2008-10-23 2010-04-29 Kabushiki Kaisha Shofu One-pack type dental adhesive composition
WO2012036760A1 (en) * 2010-09-16 2012-03-22 Specmat, Inc. Method, process and fabrication technology for high-efficency low-cost crytalline silicon solar cells
US20120088318A1 (en) * 2010-10-12 2012-04-12 Tekcore Co., Ltd. Method for Fabricating a Vertical Light-Emitting Diode with High Brightness
US20120178257A1 (en) * 2011-01-07 2012-07-12 Micron Technology, Inc. Solutions for cleaning semiconductor structures and related methods
US20120273458A1 (en) * 2011-04-26 2012-11-01 Tristan Bret Method and apparatus for processing a substrate with a focused particle beam

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3013956A (en) * 1957-04-05 1961-12-19 Baldwin Piano Co Methods of etching metals in the platinum group and producing printed circuits therefrom
DD268807B1 (en) * 1988-02-17 1993-01-14 Keppel Peter Dipl Chem Dr AGENTS FOR GENERATING MESA AND TRIBUTE STRUCTURES
TW332322B (en) * 1994-03-31 1998-05-21 Furontec Kk Manufacturing method for etchant and electronic element of conductive semiconductor
US6080683A (en) 1999-03-22 2000-06-27 Special Materials Research And Technology, Inc. Room temperature wet chemical growth process of SiO based oxides on silicon
US6593077B2 (en) 1999-03-22 2003-07-15 Special Materials Research And Technology, Inc. Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate
KR100564594B1 (en) * 2003-12-13 2006-03-29 삼성전자주식회사 Morse transistor using planarization material film and manufacturing method thereof
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
JP4692072B2 (en) * 2005-05-19 2011-06-01 三菱化学株式会社 Manufacturing method of light emitting diode
KR100678482B1 (en) * 2006-01-17 2007-02-02 삼성전자주식회사 Cleaning solution of silicon surface and manufacturing method of semiconductor device using same
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5601656A (en) * 1995-09-20 1997-02-11 Micron Technology, Inc. Methods for cleaning silicon wafers with an aqueous solution of hydrofluoric acid and hydriodic acid
US6783695B1 (en) * 1999-06-29 2004-08-31 Micron Technology, Inc. Acid blend for removing etch residue
US6613697B1 (en) * 2001-06-26 2003-09-02 Special Materials Research And Technology, Inc. Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof
US20090192065A1 (en) * 2005-06-16 2009-07-30 Advanced Technology Materials, Inc. Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating
US20100101453A1 (en) * 2008-10-23 2010-04-29 Kabushiki Kaisha Shofu One-pack type dental adhesive composition
WO2012036760A1 (en) * 2010-09-16 2012-03-22 Specmat, Inc. Method, process and fabrication technology for high-efficency low-cost crytalline silicon solar cells
US20120088318A1 (en) * 2010-10-12 2012-04-12 Tekcore Co., Ltd. Method for Fabricating a Vertical Light-Emitting Diode with High Brightness
US20120178257A1 (en) * 2011-01-07 2012-07-12 Micron Technology, Inc. Solutions for cleaning semiconductor structures and related methods
US20120273458A1 (en) * 2011-04-26 2012-11-01 Tristan Bret Method and apparatus for processing a substrate with a focused particle beam

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NUTSU ET AL.: "Solvent Extraction Equilibria of Acids. VII. The Co-extraction of Water with Strong Mineral Acids by Trioctylphosphine Oxide", BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, vol. 52, no. 6, 1979, pages 1799 - 1801, XP008181643 *

Also Published As

Publication number Publication date
EP3008152A4 (en) 2017-02-22
CN105453238B (en) 2020-11-10
US20160122554A1 (en) 2016-05-05
EP3008152A2 (en) 2016-04-20
WO2014200985A2 (en) 2014-12-18
CN105453238A (en) 2016-03-30
EP3008152B1 (en) 2020-08-05
TWI626297B (en) 2018-06-11
TW201516130A (en) 2015-05-01

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