WO2015081659A1 - 一种阵列基板、液晶显示面板及显示装置 - Google Patents

一种阵列基板、液晶显示面板及显示装置 Download PDF

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Publication number
WO2015081659A1
WO2015081659A1 PCT/CN2014/076619 CN2014076619W WO2015081659A1 WO 2015081659 A1 WO2015081659 A1 WO 2015081659A1 CN 2014076619 W CN2014076619 W CN 2014076619W WO 2015081659 A1 WO2015081659 A1 WO 2015081659A1
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Prior art keywords
electrode
array substrate
signal line
data signal
pixel electrode
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English (en)
French (fr)
Inventor
崔贤植
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US14/415,814 priority Critical patent/US9921433B2/en
Priority to EP14861101.5A priority patent/EP2908171B1/en
Publication of WO2015081659A1 publication Critical patent/WO2015081659A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate, a liquid crystal display panel, and a display device.
  • Liquid crystal display technology has developed rapidly and has become a bright spot in the industry's new stars and economic development. While the liquid crystal display is booming, wide viewing angle, high image quality, and fast response speed have become urgent requirements for liquid crystal display devices. At present, the advanced super-dimensional field switching (ADS), ADS (ADS) liquid crystal display technology has become a hot topic in recent years due to its wide viewing angle, high image quality and fast response speed.
  • ADS advanced super-dimensional field switching
  • ADS liquid crystal display technology forms a multi-dimensional electric field by the electric field generated by the edge of the slit electrode in the same plane and the electric field generated between the slit electrode layer and the plate electrode layer, so that all the aligned liquid crystal molecules are directly between the slit electrodes in the liquid crystal cell and above the electrode. Both can produce rotation, thereby improving the liquid crystal working efficiency and increasing the light transmission efficiency.
  • ADS technology has improved high-transmission I-ADS technology, high aperture ratio H-ADS and high-resolution S-ADS technology.
  • the existing H-ADS type and S-ADS type array substrate are as shown in FIG. 1, and include: a substrate, a thin film transistor 2, a data signal line 3, and pixel electrodes 4 and a common electrode 5 insulated from each other.
  • the thin film transistor 2 includes: a gate electrode 21 sequentially disposed on the base substrate 1, a gate insulating layer 22, an active layer 23, and a source electrode 24 and a drain electrode 25 disposed in the same layer, and the data signal line 3 and The drain electrode 25 is provided in the same layer, the pixel electrode 4 is electrically connected to the drain electrode 25, and the common electrode 5 is located above the pixel electrode 4 and has a slit shape.
  • the electromagnetic signal affects the deflection of the liquid crystal molecules in the region corresponding to the data signal line 3 during display, thereby causing light leakage of the liquid crystal display device during display.
  • a shield electrode 6 is also disposed on the array substrate in the same layer and electrically connected to the common electrode 5.
  • the orthographic projection of the shield electrode 6 on the base substrate 1 covers the orthographic projection of the data signal line 3 on the base substrate 1 for shielding.
  • a first insulating layer 7 and a second insulating layer 8 are sequentially disposed, due to the first insulating layer 7 and the first
  • the total thickness of the two insulating layers 8 is relatively thick, so that the width of the shield electrode 6 is wider.
  • the width of the shield electrode 6 needs to exceed the edge of the data line signal line 3. 2.5 ⁇ ⁇ or more.
  • a resin layer and a second insulating layer are sequentially disposed between the data signal line 3 and the shield electrode 6, and since the thickness of the resin layer is thicker, the width of the shield electrode 6 is wider, for example, When the thickness of the resin layer is 1.7 ⁇ m, and the thickness of the second insulating layer is 300 ⁇ , the width of the shield electrode 6 needs to exceed 3.5-4.0 ⁇ above the edge of the signal line signal line.
  • the pixel pitch of the array is small, and the wider the width of the shield electrode, the slit of the common electrode disposed in the same layer as the shield electrode in a pixel pitch range. The smaller the width, the more difficult it is to prepare the array substrate.
  • the embodiment of the invention provides an array substrate, a liquid crystal display panel and a display device, which can effectively prevent light leakage of the array substrate and reduce the difficulty of the preparation process of the array substrate.
  • An array substrate provided by an embodiment of the invention includes a substrate substrate, a thin film transistor and a data signal line on the substrate, and a pixel electrode and a common electrode which are sequentially above the thin film transistor and insulated from each other, wherein
  • the thin film transistor includes an active layer, a source electrode, and a drain
  • the electrode and the gate electrode, the source electrode, the drain electrode and the data signal line are disposed in the same layer, and the pixel electrode is electrically connected to the drain electrode, and further includes:
  • a first shield electrode disposed in the same layer as the pixel electrode and insulated from the pixel electrode, and an orthographic projection of the first shield electrode on the base substrate covers a positive projection of the data signal line on the base substrate.
  • the first shielding electrode that shields the instantaneous electromagnetic signal on the data signal line is disposed in the same layer as the pixel electrode, the shielding electrode and the common electrode are the same as those in the existing array substrate.
  • the first shielding electrode can effectively prevent the light leakage of the array substrate and improve the color mixing phenomenon of the array substrate, thereby reducing the first shielding disposed in the same layer as the pixel electrode.
  • the first shielding electrode occupies a region of the common electrode, so that the width of the slit of the common electrode can be increased, thereby reducing the difficulty in the fabrication process of the array substrate.
  • the distance between the first shielding electrode and the data signal line is further, the first shielding electrode
  • the orthographic projection on the base substrate is larger.
  • the method further includes: a second shielding electrode disposed in the same layer as the common electrode, wherein the second shielding electrode is electrically connected to the first shielding electrode, And the second shield electrode and the common electrode are both applied with a common electrode signal.
  • the function of the second shield electrode is to apply the common electrode signal to the first shield electrode, so that the signal line for separately supplying the signal to the first shield electrode can be saved.
  • the orthographic projection of the second shielding electrode on the substrate substrate is smaller than An orthographic projection of the first shield electrode on the base substrate.
  • the method further includes: a first insulating layer between the pixel electrode and the common electrode, wherein the second shielding electrode passes through a via hole penetrating the first insulating layer
  • the first shield electrode is electrically connected to achieve the purpose of applying a common electrode signal to the second shield electrode.
  • the pixel electrode has a slit shape or a flat shape
  • the common electrode has a slit shape
  • the array substrate provided by the embodiment of the present invention when the array substrate provided by the embodiment of the present invention is of the H-ADS type, the array substrate provided by the embodiment of the present invention further includes: a second portion between the thin film transistor and the pixel electrode Insulation.
  • the array substrate provided by the embodiment of the present invention when the array substrate provided by the embodiment of the present invention is of the S-ADS type, the array substrate provided by the embodiment of the present invention further includes: located between the thin film transistor and the pixel electrode Resin layer.
  • the embodiment of the invention further provides a liquid crystal display panel, which comprises the above array substrate provided by the embodiment of the invention.
  • the embodiment of the invention further provides a display device, which comprises the above liquid crystal display panel provided by the embodiment of the invention.
  • FIG. 2 is a schematic structural diagram of an array reversed according to an embodiment of the present invention.
  • FIG. 3 is a second schematic structural diagram of an array according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a comparison between an array substrate and an existing array «reverse light leakage simulation result according to an embodiment of the present invention. detailed description
  • An embodiment of the present invention provides an array « , as shown in FIG. 2 and FIG. 3 , including a substrate reverse 01 , a thin film transistor 02 and a data signal line 03 on the substrate substrate 01 , and sequentially located above the thin film transistor 02 .
  • the pixel electrode 04 and the common electrode 05 are insulated from each other, wherein the thin film transistor 02 includes a gate electrode 021, an active layer 022, a source electrode 023, and a drain electrode 024, and the source electrode 023, the drain electrode 024, and the data signal line 03 are disposed in the same layer.
  • the pixel electrode 04 is electrically connected to the drain electrode 024, and further includes:
  • the first shielding electrode that shields the instantaneous electromagnetic signal on the data signal line is disposed in the same layer as the pixel electrode, the shielding electrode and the common electrode are the same as those in the existing array substrate.
  • the first shielding electrode can effectively prevent the light leakage of the array substrate and improve the color mixing phenomenon of the array substrate, thereby reducing the first shielding disposed in the same layer as the pixel electrode.
  • the first shielding electrode is disposed in the same layer as the pixel electrode, It is also possible to avoid the area where the first shielding electrode occupies the common electrode, so that the slit width corresponding to the opening area of each pixel in the common electrode can be increased, thereby reducing the difficulty in the fabrication process of the array substrate.
  • the array substrate provided by the embodiment of the present invention may further include: a second shielding electrode 07 disposed in the same layer as the common electrode 05, and a second shielding electrode 07.
  • the first shield electrode 06 is electrically connected, and the second shield electrode 07 and the common electrode 05 are both applied with a common electrode signal.
  • the second shield electrode 07 is disposed to apply a common electrode signal to the first shield electrode 06, so that a signal line for applying an electrical signal to the first shield electrode 06 can be saved separately; and the second shield electrode 07 is
  • the common electrode 05 is disposed in the same layer, so that the pattern of the common electrode 05 and the second shield electrode 07 can be formed by one patterning process at the time of preparation, without adding a new preparation process, only the composition of the corresponding film layer can be changed. The realization simplifies the process steps, saves production costs and improves production efficiency.
  • the second shield electrode 07 is positive on the substrate _ ⁇ ⁇
  • the projection is smaller than the orthographic projection of the first shield electrode 06 on the base substrate 01.
  • the array substrate provided in the embodiment of the present invention may further include: a first insulation between the pixel electrode 04 and the common electrode 05.
  • the layer 08 and the second shield electrode 07 are electrically connected to the first shield electrode 06 through the via 001 penetrating the first insulating layer 08, thereby achieving the purpose of applying the common electrode signal to the second shield electrode 07.
  • the pixel electrode 04 may be in the shape of a flat plate, and the common electrode 05 may be in the shape of a slit; or, in specific implementation, the pixel The electrode 04 and the common electrode 05 are both slit-shaped and are not limited herein.
  • the array substrate provided by the embodiment of the present invention may be an H-ADS type array substrate, or may be an S-ADS type array substrate, which is not limited herein.
  • the second insulating layer 09 between the thin film transistor 02 and the pixel electrode 04 may also be included.
  • the resin substrate 10 may be further disposed between the thin film transistor 02 and the pixel electrode 04.
  • the source electrode 023 and the drain electrode 024 are respectively located above the gate electrode 021; or, the gate electrode may also be It is located below the source electrode and the drain electrode and is not limited herein.
  • the thin film transistor 2 may be a bottom gate type structure, and the thin film transistor may also be a top gate type structure, of course.
  • the thin film transistor may also be other structures capable of implementing the solution of the present invention, which is not limited herein.
  • an embodiment of the present invention further provides a liquid crystal display panel, including the above array substrate provided by the embodiment of the present invention.
  • Other essential components of the liquid crystal display panel are those of ordinary skill in the art, and are not described herein, nor should they be construed as limiting the invention.
  • the embodiment of the present invention further provides a display device, which includes the above liquid crystal display panel provided by the embodiment of the present invention, and the display device can be: a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame. , navigation, etc. Any product or component that has a display function.
  • the display device reference may be made to the embodiment of the liquid crystal display panel described above, and the repeated description is omitted.
  • Embodiments of the present invention provide an array substrate, a liquid crystal display panel, and a display device, the array substrate including a substrate substrate, a thin film transistor and a data signal line on the substrate, and pixels that are sequentially above the thin film transistor and insulated from each other An electrode and a common electrode, wherein the thin film transistor includes an active layer, a source electrode, a drain electrode, and a gate electrode, and the source electrode, the drain electrode, and the data signal line are the same
  • the layer is disposed, the pixel electrode is electrically connected to the drain electrode, and further includes: a first shielding electrode disposed in the same layer as the pixel electrode and insulated from the pixel electrode, the orthographic projection of the first shielding electrode on the substrate substrate covering the data signal line on the substrate substrate Orthographic projection.
  • the shield electrode and the common electrode are disposed in the same layer. Because the pixel electrode is closer to the data signal line, the first shielding electrode and the data signal disposed in the same layer as the pixel electrode can be reduced on the basis of effectively preventing the light leakage of the array substrate and improving the color mixing phenomenon of the array substrate by using the first shielding electrode.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种阵列基板、液晶显示面板及显示装置。阵列基板包括衬底基板（01），位于衬底基板（01）上的薄膜晶体管（02）和数据信号线（03），以及依次位于薄膜晶体管（02）上且相互绝缘的像素电极（04）和公共电极（05）。阵列基板还包括与像素电极（04）同层设置且与其绝缘第一屏蔽电极（06），第一屏蔽电极（06）在衬底基板（01）的正投影覆盖数据信号线（03）在衬底基板（01）的正投影。与现有的阵列基板中屏蔽电极与公共电极同层设置相比，由于像素电极（04）更靠近数据信号线（03），可以减小第一屏蔽电极（06）的宽度，避免第一屏蔽电极（06）占用过多同层设置的像素电极（04）的区域，也避免第一屏蔽电极（06）占用公共电极（05）的区域，从而可以增大公共电极（05）的狭缝宽度，降低阵列基板的制造工艺的难度。

Description

一种阵列基板、 液晶显示面板及显示装置 技术领域
本发明涉及显示技术领域， 尤其涉及一种阵列基板、 液晶显示面板及显示 装置。
背景技术
液晶显示技术迅速发展， 并成为目前工业界的新星和经济发展的亮点。 在 液晶显示蓬勃发展的同时， 宽视角、 高画质和较快的响应速度等成为液晶显示 器件的迫切要求。 目前， 高级超维场转换（ ADvanced Super Dimension Switch , ADSDS, 简称 ADS )型液晶显示技术因具有宽视角、 高画质与较快的响应速 度等特性， 成为近几年研究的热点。
ADS 液晶显示技术通过同一平面内狭缝电极边缘所产生的电场以及狭缝 电极层与板状电极层间产生的电场形成多维电场， 使液晶盒内狭缝电极间、 电 极正上方所有取向液晶分子都能够产生旋转，从而提高了液晶工作效率并增大 了透光效率。 针对不同应用， ADS技术的改进技术有高透过率 I-ADS技术、 高开口率 H-ADS和高分辨率 S-ADS技术等。
现有的 H-ADS型和 S-ADS型阵列基板如图 1所示， 包括： 衬底 _ί ^反 1、 薄膜晶体管 2、数据信号线 3、以及相互绝缘的像素电极 4和公共电极 5;其中， 薄膜晶体管 2包括： 依次设置于衬底基板 1上的栅电极 21、 栅极绝缘层 22、 有源层 23、 以及同层设置的源电极 24和漏电极 25,数据信号线 3与漏电极 25 同层设置， 像素电极 4与漏电极 25电性连接， 公共电极 5位于像素电极 4的 上方， 且为狭缝状。
在液晶显示装置中， 由于数据信号线 3的电磁信号的作用， 在显示时电磁 信号会影响与数据信号线 3对应的区域内的液晶分子的偏转，从而导致液晶显 示装置在显示时发生漏光现象。 因此， 如图 1所示， 在 H-ADS型和 S-ADS型 的阵列基板上还设置有与公共电极 5同层且电性连接的屏蔽电极 6, 屏蔽电极 6在衬底基板 1的正投影覆盖数据信号线 3在衬底基板 1的正投影， 用以屏蔽 数据信号线 3上的电磁信号对与数据信号线 3对应的区域内的液晶分子的影 响， 从而防止液晶显示装置发生漏光现象。 而且， 为了能够较好的屏蔽数据信 号线 3上的电磁信号， 屏蔽电极 6与数据信号线 3之间的距离越远， 屏蔽电极 6的宽度越宽。
在 H-ADS型阵列基板中， 如图 1所示， 位于数据信号线 3与屏蔽电极 6 之间还依次设置有第一绝缘层 7和第二绝缘层 8, 由于第一绝缘层 7和第二绝 缘层 8的总厚度较厚， 因此屏蔽电极 6的宽度较宽， 例如在第一绝缘层和第二 绝缘层的总厚度为 6000A时，屏蔽电极 6的宽度需要超过数据线信号线 3边缘 2.5 μ πι以上。 在 S-ADS型阵列基板中， 数据信号线 3与屏蔽电极 6之间依次 设置的是树脂层和第二绝缘层， 由于树脂层的厚度更厚， 因此屏蔽电极 6的宽 度更宽， 例如在树脂层厚度为 1.7 μ πι, 第二绝缘层厚度为 300Α时， 屏蔽电极 6的宽度需要超过数据线信号线边缘 3.5-4.0 μ πι以上。 在高分辨率液晶显示装 置中， 阵列 反的像素间距（pixel pitch )较小， 那么屏蔽电极的宽度越宽， 就 会导致在一个像素间距范围内与屏蔽电极同层设置的公共电极的狭缝宽度越 小， 从而增加了阵列基板的制备工艺的难度。
因此， 如何既能防止阵列基板发生漏光现象， 又能降低阵列基板的制备工 艺的难度已成为业界 需解决的问题。 发明内容
本发明实施例提供一种阵列基板、 液晶显示面板及显示装置， 既能有效的 防止阵列基板发生漏光现象， 又能降低阵列基板的制备工艺的难度。
本发明实施例提供的一种阵列基板， 包括衬底基板， 位于所述衬底基板 上的薄膜晶体管和数据信号线， 以及依次位于所述薄膜晶体管上方且相互绝 缘的像素电极和公共电极， 其中， 所述薄膜晶体管包括有源层、 源电极、 漏 电极和栅电极， 所述源电极、 所述漏电极以及所述数据信号线同层设置， 所 述像素电极与所述漏电极电性连接， 还包括：
与所述像素电极同层设置且与其绝缘的第一屏蔽电极， 且所述第一屏蔽 电极在所述衬底基板的正投影覆盖所述数据信号线在所述衬底基板的正投 影。
本发明实施例提供的上述阵列基板，由于将对数据信号线上的瞬时电 磁信号起屏蔽作用的第一屏蔽电极与像素电极同层设置， 因此与现有的阵列 基板中屏蔽电极与公共电极同层设置相比， 由于像素电极更靠近数据信号 线， 在利用第一屏蔽电极有效防止阵列基板发生漏光现象、 改善阵列基板的 混色现象的基础上，可以缩小与像素电极同层设置的第一屏蔽电极与数据信号 线之间的距离， 从而减小第一屏蔽电极的宽度， 避免第一屏蔽电极占用过多同 层设置的像素电极的区域； 并且， 第一屏蔽电极与像素电极同层设置， 还可以 避免第一屏蔽电极占用公共电极的区域，从而可以增大公共电极的狭缝的 宽度， 进而降低了阵列基板的制备工艺的难度。
较佳地， 为了更好的防止漏光现象发生，在本发明实施例提供的上述 阵列基板中， 所述第一屏蔽电极与所述数据信号线之间的距离越远， 所述第 一屏蔽电极在所述衬底基板的正投影越大。
较佳地， 在本发明实施例提供的上述阵列基板中， 还包括： 与所述公 共电极同层设置的第二屏蔽电极， 所述第二屏蔽电极与所述第一屏蔽电极电 性连接， 且所述第二屏蔽电极和所述公共电极均施加有公共电极信号。 设置 第二屏蔽电极的作用是为了将公共电极信号施加于第一屏蔽电极之上， 从而 可以节省单独设置向第一屏蔽电极通电信号的信号线。
进一步地，在具体实施时，为了尽可能的增大公共电极的狭缝的宽度， 在本发明实施例提供的上述阵列基板中，所述第二屏蔽电极在所述衬底基板 的正投影小于所述第一屏蔽电极在所述衬底基板的正投影。
较佳地， 在具体实施时， 为了使像素电极与公共电极相互绝缘， 在本 发明实施例提供的上述阵列基板中，还包括： 位于所述像素电极和所述公共 电极之间的第一绝缘层， 所述第二屏蔽电极通过贯穿所述第一绝缘层的过孔 与所述第一屏蔽电极电性连接， 从而达到将公共电极信号施加于第二屏蔽电 极的目的。
较佳地， 在本发明实施例提供的上述阵列基板中， 所述像素电极为狭 缝状或平板状， 所述公共电极为狭缝状。
进一步地， 当本发明实施例提供的上述阵列基板为 H-ADS型时， 在 本发明实施例提供的上述阵列基板中，还包括： 位于所述薄膜晶体管与所述 像素电极之间的第二绝缘层。
或者， 进一步地， 当本发明实施例提供的上述阵列基板为 S-ADS型 时， 在本发明实施例提供的上述阵列基板中， 还包括： 位于所述薄膜晶体 管与所述像素电极之间的树脂层。
本发明实施例还提供了一种液晶显示面板， 所述液晶显示面板包括本发 明实施例提供的上述阵列基板。
本发明实施例还提供了一种显示装置， 所述显示装置包括本发明实施例 提供的上述液晶显示面板。 附图说明
图 1为现有技术的阵列 反的结构示意图；
图 2为本发明实施例提供的阵列 反的结构示意图之一；
图 3为本发明实施例提供的阵列 反的结构示意图之二；
图 4为本发明实施例提供的阵列基板与现有的阵列 «反的漏光模拟结果比 较示意图。 具体实施方式
下面结合附图， 对本发明实施例提供的阵列基板、 液晶显示面板及显示 装置的具体实施方式进行详细地说明。
附图中各部件的大小和形状不反映阵列基板的真实比例， 目的只是示意 说明本发明内容。
本发明实施例提供了一种阵列 « , 如图 2和图 3 所示， 包括衬底 反 01 , 位于衬底基板 01上的薄膜晶体管 02和数据信号线 03, 以及依次位于薄膜 晶体管 02上方且相互绝缘的像素电极 04和公共电极 05, 其中， 薄膜晶体管 02包括栅电极 021、 有源层 022、 源电极 023和漏电极 024, 源电极 023、 漏电 极 024以及数据信号线 03同层设置， 像素电极 04与漏电极 024电性连接， 还 包括：
与像素电极 04同层设置且与其绝缘的第一屏蔽电极 06, 第一屏蔽电极 06 在衬底基板 01的正投影覆盖数据信号线 03在衬底基板 01的正投影。
本发明实施例提供的上述阵列基板，由于将对数据信号线上的瞬时电 磁信号起屏蔽作用的第一屏蔽电极与像素电极同层设置， 因此与现有的阵列 基板中屏蔽电极与公共电极同层设置相比， 由于像素电极更靠近数据信号 线， 在利用第一屏蔽电极有效防止阵列基板发生漏光现象、 改善阵列基板的 混色现象的基础上，可以缩小与像素电极同层设置的第一屏蔽电极与数据信号 线之间的距离， 从而减小第一屏蔽电极的宽度， 避免第一屏蔽电极占用过多同 层设置的像素电极的区域； 并且， 第一屏蔽电极与像素电极同层设置， 还可以 避免第一屏蔽电极占用公共电极的区域，从而可以增大公共电极中对应于 各像素的开口区域的狭缝宽度， 进而降低了阵列基板的制备工艺的难度。 漏光模拟实验的模拟结果，其中曲线 101为现有的阵列基板在距离数据信号线 边缘 6 μ πι范围内的相对漏光强度， 曲线 102为本发明实施例提供的上述阵列 基板在距离数据信号线边缘 6 μ m范围内的相对漏光强度。 从所示出的模拟结 果可知， 本发明实施例所提供的阵列基板能够更有效的防止阵列基板发生漏光 现象。 较佳地， 在具体实施时， 为了能够更好的达到防止漏光现象， 在本发明 实施例提供的上述阵列基板中， 如图 2和图 3所示， 第一屏蔽电极 06与数 据信号线 03之间的距离越大， 第一屏蔽电极 06在衬底基板 01的正投影越大。
较佳地， 在具体实施时， 在本发明实施例提供的上述阵列基板中， 如 图 3所示， 还可以包括： 与公共电极 05同层设置的第二屏蔽电极 07, 第二屏 蔽电极 07与第一屏蔽电极 06电性连接， 且第二屏蔽电极 07和公共电极 05均 施加有公共电极信号。 设置第二屏蔽电极 07的作用是为了将公共电极信号施 加于第一屏蔽电极 06之上， 从而可以节省单独设置向第一屏蔽电极 06施加电 信号的信号线； 且第二屏蔽电极 07是与公共电极 05同层设置的， 因此在制备 时， 可以通过一次构图工艺就形成公共电极 05和第二屏蔽电极 07的图形， 不 用增加新的制备工艺， 仅需变更对应的膜层的构图即可实现， 简化了工艺步 骤， 节省了生产成本， 提高了生产效率。
进一步地， 为了增大公共电极的狭缝的宽度， 在本发明实施例提供的上 述阵列基板中， 如图 2和图 3所示， 第二屏蔽电极 07在衬底 _ί ^反 01的正投 影小于第一屏蔽电极 06在衬底基板 01的正投影。
较佳地， 为了使像素电极与公共电极相互绝缘， 在本发明实施例提供 的上述阵列基板中，如图 3所示， 还可以包括： 位于像素电极 04和公共电极 05之间的第一绝缘层 08 , 第二屏蔽电极 07通过贯穿第一绝缘层 08的过孔 001 与第一屏蔽电极 06电性连接， 从而达到将公共电极信号施加于第二屏蔽电极 07的目的。
较佳地，在本发明实施例提供的上述阵列基板中，如图 2和图 3所示， 像素电极 04可以为平板状，公共电极 05可以为狭缝状；或者，在具体实施时， 像素电极 04和公共电极 05均为狭缝状， 在此不做限定。
进一步地， 在具体实施时， 本发明实施例提供的上述阵列基板可以是 H-ADS型阵列基板， 也可以是 S-ADS型阵列基板， 在此不做限定。
具体地， 当本发明实施例提供的上述阵列基板是 H-ADS型阵列基板时， 如图 2所示， 还可以包括： 位于薄膜晶体管 02与像素电极 04之间的第二绝缘 层 09。
或者， 具体地， 当本发明实施例提供的上述阵列基板是 S-ADS型阵列基 板时， 如图 3所示， 还可以包括： 位于薄膜晶体管 02与像素电极 04之间的树 脂层 10。
较佳地， 为了便于实施， 在本发明实施例提供的上述阵列基板中， 如 图 2和图 3所示， 源电极 023和漏电极 024分别位于栅电极 021的上方； 或者， 栅电极也可以位于源电极和漏电极之下， 在此不做限定。
进一步地， 在具体实施时， 在本发明实施例提供的上述阵列基板中， 如图 2和图 3所示， 薄膜晶体管 2可以为底栅型结构， 薄膜晶体管也可以 为顶栅型结构， 当然薄膜晶体管还可以为能够实现本发明方案的其它结 构， 在此不做限定。
基于同一发明构思， 本发明实施例还提供了一种液晶显示面板， 包括本 发明实施例提供的上述阵列基板。 对于液晶显示面板的其它必不可少的组成 部分均为本领域的普通技术人员应该具有的， 在此不做赘述， 也不应作为对本 发明的限制。 该液晶显示面板的实施可以参见上述阵列基板的实施例， 重复之 处不再赘述。
基于同一发明构思， 本发明实施例还提供了一种显示装置， 包括本发明 实施例提供的上述液晶显示面板， 该显示装置可以为： 手机、 平板电脑、 电 视机、 显示器、 笔记本电脑、 数码相框、 导航仪等任何具有显示功能的产品 或部件。 该显示装置的实施可以参见上述液晶显示面板的实施例， 重复之处 不再赘述。
本发明实施例提供了一种阵列基板、 液晶显示面板及显示装置， 该阵列 基板包括衬底基板， 位于衬底基板上的薄膜晶体管和数据信号线， 以及依次 位于薄膜晶体管上方且相互绝缘的像素电极和公共电极， 其中， 薄膜晶体管 包括有源层、 源电极、 漏电极和栅电极， 源电极、 漏电极以及数据信号线同 层设置， 像素电极与漏电极电性连接， 还包括： 与像素电极同层设置且与其 绝缘的第一屏蔽电极， 第一屏蔽电极在衬底基板的正投影覆盖数据信号线在 衬底基板的正投影。 在该阵列基板中， 由于将对数据信号线上的瞬时电磁 信号起屏蔽作用的第一屏蔽电极与像素电极同层设置， 因此与现有的阵列基 板中屏蔽电极与公共电极同层设置相比， 由于像素电极更靠近数据信号线， 在利用第一屏蔽电极有效防止阵列基板发生漏光现象、 改善阵列基板的混色 现象的基础上，可以缩小与像素电极同层设置的第一屏蔽电极与数据信号线之 间的距离， 从而减小第一屏蔽电极的宽度， 避免第一屏蔽电极占用过多同层设 置的像素电极的区域； 并且， 第一屏蔽电极与像素电极同层设置， 还可以避免 第一屏蔽电极占用公共电极的区域， 从而可以增大公共电极的狭缝的宽 度， 进而降低了阵列基板的制备工艺的难度。 明的精神和范围。 这样， 倘若本发明的这些修改和变型属于本发明权利要求及 其等同技术的范围之内， 则本发明也意图包含这些改动和变型在内。

Claims

权 利 要 求 书
1、 一种阵列基板， 包括衬底基板， 位于所述衬底基板上的薄膜晶体管和 数据信号线， 以及依次位于所述薄膜晶体管上方且相互绝缘的像素电极和公 共电极， 其中， 所述薄膜晶体管包括有源层、 源电极、 漏电极和栅电极， 所 述源电极、 所述漏电极以及所述数据信号线同层设置， 所述像素电极与所述 漏电极电性连接， 其特征在于， 还包括：
与所述像素电极同层设置且与其绝缘的第一屏蔽电极， 所述第一屏蔽电 极在所述衬底基板的正投影覆盖所述数据信号线在所述衬底基板的正投影。
2、 如权利要求 1所述的阵列基板， 其特征在于， 所述第一屏蔽电极与所 述数据信号线之间的距离越大， 所述第一屏蔽电极在所述衬底基板的正投影 越大。
3、 如权利要求 1所述的阵列基板， 其特征在于， 还包括： 与所述公共电 极同层设置的第二屏蔽电极， 所述第二屏蔽电极与所述第一屏蔽电极电性连 接， 且所述第二屏蔽电极和所述公共电极均施加有公共电极信号。
4、 如权利要求 3所述的阵列基板， 其特征在于， 所述第二屏蔽电极在所 述衬底基板的正投影小于所述第一屏蔽电极在所述衬底基板的正投影。
5、 如权利要求 3所述的阵列基板， 其特征在于， 还包括： 位于所述像素 电极和所述公共电极之间的第一绝缘层， 所述第二屏蔽电极通过贯穿所述第 一绝缘层的过孔与所述第一屏蔽电极电性连接。
6、 如权利要求 1-5任一项所述的阵列基板， 其特征在于， 所述像素电极 为狭缝状或平板状， 所述公共电极为狭缝状。
7、 如权利要求 1-5任一项所述的阵列基板， 其特征在于， 还包括： 位于 所述薄膜晶体管与所述像素电极之间的第二绝缘层。
8、 如权利要求 1-5任一项所述的阵列基板， 其特征在于， 还包括： 位于 所述薄膜晶体管与所述像素电极之间的树脂层。
9、 一种液晶显示面板， 其特征在于， 所述液晶显示面板包括如权利要求 1-8任一项所述的阵列基板。
10、 一种显示装置， 其特征在于， 所述显示装置包括如权利要求 9所述的 液晶显示面板。
PCT/CN2014/076619 2013-12-06 2014-04-30 一种阵列基板、液晶显示面板及显示装置 Ceased WO2015081659A1 (zh)

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