WO2015165184A1 - Amoled阵列基板及制作方法和显示装置 - Google Patents

Amoled阵列基板及制作方法和显示装置 Download PDF

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Publication number
WO2015165184A1
WO2015165184A1 PCT/CN2014/085411 CN2014085411W WO2015165184A1 WO 2015165184 A1 WO2015165184 A1 WO 2015165184A1 CN 2014085411 W CN2014085411 W CN 2014085411W WO 2015165184 A1 WO2015165184 A1 WO 2015165184A1
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Prior art keywords
storage capacitor
organic electroluminescent
electroluminescent device
lower plate
pattern
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English (en)
French (fr)
Inventor
王继亮
李重君
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to EP14863076.7A priority Critical patent/EP3139410B1/en
Priority to US14/648,191 priority patent/US9691834B2/en
Publication of WO2015165184A1 publication Critical patent/WO2015165184A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an active matrix organic electroluminescent device array substrate, a method of fabricating the same, and a display device. Background technique
  • OLED Organic Light-Emitting Diode
  • Passive Matrix passive matrix drive
  • Active Matrix Active Matrix, depending on the driving method.
  • AM AMOLED two.
  • AMOLEDs can be classified into a top emission type (light is emitted from the upper substrate) and a bottom emission type (light is emitted from the lower substrate) depending on the way the light is emitted.
  • the storage capacitor 100 is designed between the gate 2 and the source 3 of the thin film transistor 30, and the portion of the gate 2 opposite to the source 3 serves as a storage capacitor.
  • the two plates of 100, the gate insulating layer 6 acts as a dielectric shield.
  • the large-area storage capacitor 100 occupies a large light-emitting area, resulting in a low aperture ratio of the pixel (pixel aperture ratio refers to the pixel-emitting area of the pixel)
  • the plate of the storage capacitor 100 is on the same layer as the gate line or the data line, and a large parasitic capacitance is generated therebetween, thereby affecting the transmission and accuracy of the data signal; again, due to the pole of the storage capacitor 100
  • the plate is connected to the source 3 of the thin film transistor 30.
  • the potential of the source 3 is related to the current flowing through the thin film transistor 30.
  • the change in the current of the thin film transistor 30 also causes a change in the potential of the source 3, and thus, it is highly susceptible to data signals.
  • Write distortion, AMOLED display will appear brightness jump after lighting, the brightness of the pixel can not meet the required brightness of the gray-scale signal, the display effect is not ideal.
  • Embodiments of the present invention provide an active matrix organic electroluminescent device array substrate, a manufacturing method thereof, and a display device to improve a pixel aperture ratio of a display device and enhance a display shield.
  • An active matrix organic electroluminescent device array substrate provided by an embodiment of the invention includes a substrate; a plurality of pixel units located on the substrate and arranged in an array, each of the pixel units including a thin film transistor, an organic electroluminescent device, and a memory Capacitor lower plate, where: The storage capacitor lower plate is disposed above a gate of the thin film transistor and electrically connected to a gate of the thin film transistor;
  • Pixels that are spaced apart by two adjacent pixel cells are defined.
  • the storage capacitor upper plate is disposed on the pixel defining layer, and the storage capacitor upper plate and the storage capacitor lower plate are separated by a pixel defining layer.
  • the storage capacitor upper plate may be electrically connected to a top electrode of the organic electroluminescent device.
  • the upper and lower plates of the storage capacitor are separated by a pixel defining layer, and the portion of the pixel defining layer located between the storage capacitor and the lower plate serves as a dielectric shield of the storage capacitor due to
  • the pixel defining layer itself occupies a certain light-emitting area, and the upper and lower plates of the storage capacitor are disposed on both sides of the pixel defining layer without additionally occupying the light-emitting area. Therefore, the area of the opaque gate and the source can be designed. Relatively small, the pixel aperture ratio of the display device is greatly improved.
  • a top electrode of the organic electroluminescent device is located above a lower plate of the storage capacitor, and a top electrode of the organic electroluminescent device is opposite to a position of a lower plate of the storage capacitor As the upper plate of the storage capacitor.
  • the upper and lower plates of the storage capacitor are separated by a pixel defining layer, and the portion of the pixel defining layer located between the storage capacitor and the lower plate serves as a dielectric shield of the storage capacitor due to
  • the pixel defining layer itself occupies a certain light-emitting area, and the upper and lower plates of the storage capacitor are disposed on both sides of the pixel defining layer without additionally occupying the light-emitting area. Therefore, the area of the opaque gate and the source can be designed.
  • the pixel aperture ratio of the display device is greatly improved; in addition, the upper and lower plates of the storage capacitor are electrically connected to the source of the thin film transistor, and the stability of data transmission is better, which is more favorable for the display input of the display device.
  • the brightness required by the signal is further enhanced by the display shield.
  • the storage capacitor lower plate is identical to the bottom electrode shield of the organic electroluminescent device and is in the same layer.
  • the lower electrode of the storage capacitor and the bottom electrode of the organic electroluminescent device can be formed by the same patterning process without increasing the manufacturing cost.
  • the storage capacitor lower plate and the gate of the thin film transistor are electrically connected through a first insulating layer via.
  • This solution enables a reliable connection between the lower plate and the gate of the storage capacitor. Further, the upper and lower plates of the storage capacitor are different from the gate line and the data line, which greatly reduces the parasitic capacitance and improves the accuracy of data signal transmission.
  • a portion of the thickness between the lower plate of the storage capacitor and the upper plate of the storage capacitor is the smallest.
  • the solution can reduce the area occupied by the storage capacitor under the premise of meeting the electrical performance requirements of the product, which is beneficial to further optimization of the structure.
  • the pixel defining layer shield comprises an organic resin or silicon dioxide.
  • the embodiment of the invention further provides a display device comprising the active matrix organic electroluminescent device array substrate according to any of the preceding technical solutions.
  • the display device has a higher pixel aperture ratio and a better display shield.
  • the embodiment of the invention further provides a method for fabricating an active matrix organic electroluminescent device array substrate, comprising the steps of forming a thin film transistor, an organic electroluminescent device and a storage capacitor lower plate on the substrate, the method specifically comprising:
  • a pattern of the upper plate of the storage capacitor is formed on the pixel defining layer.
  • the storage capacitor upper plate may be electrically connected to a top electrode of the organic electroluminescent device.
  • the step of forming a pattern of the storage capacitor upper plate on the pixel defining layer comprises: forming a pattern of a top electrode of the organic electroluminescent device over the pixel defining layer, the organic electro The top electrode of the light emitting device includes a portion opposite to the position of the lower plate of the storage capacitor as a storage capacitor upper plate.
  • the area of the gate and the source of the thin film transistor can be designed to be relatively small, and the active matrix organic electroluminescent device array substrate prepared by the method has a large pixel aperture ratio, and the display device can be made.
  • the display shield is greatly improved; the upper and lower plates of the storage capacitor are electrically connected to the source of the thin film transistor, and the stability of data transmission is good, which is more favorable for the brightness required by the display device to display the input signal, and the display shield is displayed. Further improvement.
  • the method further includes forming a pattern of a bottom electrode of the organic electroluminescent device after the step of forming a thin film transistor on the substrate, a pattern of a bottom electrode of the organic electroluminescent device and the storage capacitor
  • the pattern of the lower plate is formed by the same patterning process. This method does not increase the manufacturing cost while increasing the pixel aperture ratio.
  • the method further comprises: before forming the pattern of the bottom electrode of the organic electroluminescent device and the pattern of the lower plate of the storage capacitor,
  • the method can realize a reliable connection between the lower plate and the gate of the storage capacitor, and the pattern of the first insulating layer via and the pattern of the second insulating layer via are formed by the same patterning process without increasing the manufacturing cost.
  • the upper and lower plates of the storage capacitor are different from the gate line and the data line, which greatly reduces the parasitic capacitance and improves the accuracy of data signal transmission.
  • the thickness of the portion between the lower plate of the storage capacitor and the upper plate of the storage capacitor is minimized.
  • This method can reduce the area occupied by the storage capacitor under the premise of meeting the electrical performance requirements of the product, which is beneficial to further optimization of the structure.
  • FIG. 1 is a schematic cross-sectional view showing a pixel unit of a conventional AMOLED array substrate
  • FIG. 2 is a circuit diagram of a storage capacitor connection structure of a conventional AMOLED array substrate
  • FIG. 3 is a schematic cross-sectional view showing a pixel unit of an AMOLED array substrate according to an embodiment of the present invention
  • FIG. 4 is a circuit diagram of a storage capacitor connection structure of an AMOLED array substrate according to an embodiment of the invention
  • FIG. 5 is a flow chart of a method for fabricating an AMOLED array substrate according to an embodiment of the invention.
  • I-substrate 2-gate; 3-source; 4-drain; 5-active layer; 6-gate insulating layer;
  • a bottom electrode of the 10a-organic electroluminescent device a top electrode of the 10b-organic electroluminescent device;
  • the embodiment of the invention provides an active matrix organic electroluminescent device (hereinafter referred to as AMOLED) array substrate, a manufacturing method thereof and a display device.
  • AMOLED active matrix organic electroluminescent device
  • the upper and lower plates of the storage capacitor are separated by a pixel defining layer, and the portion of the pixel defining layer between the storage capacitor and the lower plate serves as a dielectric shield of the storage capacitor, due to the pixel.
  • the defining layer itself occupies a certain light-emitting area, and the upper and lower plates of the storage capacitor are disposed on both sides of the pixel defining layer without additionally occupying the light-emitting area.
  • the area of the opaque gate and the source can be designed to be relatively Smaller, the pixel aperture ratio of the display device is greatly improved.
  • the AMOLED array substrate provided by the embodiment of the present invention includes a substrate 1 and a plurality of pixel units arranged on the substrate 1 and arranged in an array, each of the pixel units including the thin film transistor 30 and the organic electroluminescence.
  • Device 50 and storage capacitor lower plate 9a where:
  • the storage capacitor lower plate 9a is disposed above the gate electrode 2 of the thin film transistor 30 and is electrically connected to the gate electrode 2 of the thin film transistor 30.
  • the array substrate further includes a pixel defining layer 11 that spaces adjacent two pixel units; and a storage capacitor upper plate 9b disposed on the pixel defining layer 11, a storage capacitor upper plate 9b and the storage capacitor lower plate 9a
  • the layers 11 are spaced apart by a pixel.
  • the storage capacitor upper plate 9b can be electrically connected to the top electrode 10b of the organic electroluminescent device.
  • the top electrode 10b of the organic electroluminescent device is located above the storage capacitor lower plate 9a, and the portion of the top electrode 10b of the organic electroluminescent device opposite to the storage capacitor lower plate 9a is used as a storage capacitor.
  • the plate 9b is spaced apart from the storage capacitor lower plate 9a by the pixel defining layer 11.
  • a partial region of the gate 2 needs to be opposite to a partial region of the source 3 to form a storage capacitor 100.
  • the partial region The area is usually designed to be large, thus affecting the aperture ratio of the pixel.
  • the upper and lower plates of the storage capacitor 100' are separated by a pixel defining layer 11, and the portion of the pixel defining layer 11 between the storage capacitor 100' and the lower plate serves as a dielectric shield, because the pixel is defined.
  • the layer 11 itself occupies a certain light-emitting area, and the upper and lower plates of the storage capacitor 100' are disposed on the upper and lower sides of the pixel defining layer 11 without additionally occupying the light-emitting area. Therefore, the opaque gate 2 and the source 3 are The area can be designed to be relatively small, greatly increasing the pixel aperture ratio of the display device.
  • the upper and lower plates of the storage capacitor 100' are electrically connected to the source 3 of the thin film transistor 30, and the stability of data transmission is better, which is more advantageous for the display device to display the brightness required by the input signal, and further display the product shield. Upgrade.
  • the storage capacitor lower plate 9a is the same as the bottom electrode 10a of the organic electroluminescent device and is located in the same layer, so that the storage capacitor lower plate 9a and the bottom electrode 10a of the organic electroluminescent device can pass The same patterning process is formed without increasing manufacturing costs.
  • the storage capacitor lower plate 9a and the gate 2 of the thin film transistor 30 are electrically connected through the first insulating layer via 13.
  • This solution can achieve a reliable connection between the storage capacitor lower plate 9a and the gate 2.
  • the upper and lower plates of the storage capacitor 100' are different from the gate lines and the data lines, which can greatly reduce the parasitic capacitance, improve the accuracy of data signal transmission, and enhance the display shield.
  • the pixel defining layer 11 is located on the storage capacitor 100' and the thickness between the lower plates is the smallest, that is, the thickness of the pixel defining layer 11 in the region of the storage capacitor 100' is smaller than the thickness of other regions.
  • C ⁇ (C is the storage capacitor value, ⁇ is the dielectric constant, is the storage capacitor plate area, dd
  • the storage capacitor plate area is proportional to the thickness of the dielectric shield of the storage capacitor. Therefore, the solution can be reduced while satisfying the electrical performance requirements of the product.
  • the area occupied by the storage capacitor 100' facilitates further optimization of the structure.
  • the structure of the thin film transistor 30 may be a top gate type or a bottom gate type, and the light emitting mode of the organic electroluminescent device 50 may be either a top emission type or a bottom emission type.
  • the organic electroluminescent device 50 may be a light-emitting device that emits red, green, or blue light, or a light-emitting device that emits white light (in order to realize color display, it is necessary to set a corresponding color resist to filter white light).
  • the organic electroluminescent device 50 of the array substrate shown in FIG. 3 is a bottom emission type, the organic electroluminescent device emits white light, and the structure of the thin film transistor is a top gate type.
  • the specific structure of each pixel unit includes: Positionally opposite source 3 and drain 4; active layer 5 over the gap between source 3 and drain 4; gate insulating layer 6 over active layer 5; over gate insulating layer 6 And a gate 2 opposite to the position of the active layer 5; a passivation layer 7 covering the gate 2; a color photoresist 12 on the passivation layer 7; a flat layer 8 covering the color photoresist 12; Above the storage capacitor lower plate 9a and the bottom electrode 10a of the organic electroluminescent device, wherein the storage capacitor lower plate 9a is electrically connected to the gate 2 through the first insulating layer via 13 (the first insulating layer via 13 is worn Over the flat layer 8 and the passivation layer 7), the bottom electrode 10a of the organic electroluminescent device is positioned opposite to the color photo
  • the substrate 1 may be a glass substrate, a resin substrate or a plastic substrate; the specific shield of the gate 2, the source 3 and the drain 4 is not limited, and may be, for example, aluminum, copper, molybdenum or the like; the active layer 5 may be used.
  • Amorphous silicon, polycrystalline silicon or an oxide semiconductor for example, indium gallium zinc oxide or germanium indium zinc oxide
  • the bottom electrode of the organic electroluminescent device 50, the top electrode and the lower plate 9a of the storage capacitor can be oxidized Indium 4 or indium oxide zinc shield
  • gate insulating layer 6, passivation layer 7 can be made of silicon nitride
  • flat layer 8 can be made of organic resin
  • pixel defining layer 11 can use organic resin or silicon dioxide Equal material shield.
  • an embodiment of the present invention further provides a method for fabricating an AMOLED array substrate (refer to FIG. 3), including forming a thin film transistor 30, an organic electroluminescent device 50, and a lower limit of a storage capacitor on a substrate.
  • the step of the board 9a the method specifically includes: Step 101, forming a pattern of the storage capacitor lower plate 9a electrically connected to the gate 2 of the thin film transistor 30; Step 102, forming a pattern of the pixel defining layer 11 covering the storage capacitor lower plate 9a;
  • Step 103 Form a pattern of the storage capacitor upper plate 9b on the pixel defining layer 11.
  • the step of forming a pattern of the storage capacitor upper plate 9b on the pixel defining layer may include: forming a pattern of the top electrode 10b of the organic electroluminescent device over the pixel defining layer 11, organically
  • the top electrode 10b of the light emitting device includes a portion opposite to the position of the storage capacitor lower plate 9a as a storage capacitor upper plate.
  • the pattern of each film layer on the substrate is usually formed by a patterning process, and the patterning process usually includes the steps of substrate cleaning, film formation, photoresist coating, exposure, development, etching, photoresist stripping, etc.
  • the film is formed by physical vapor deposition (for example, magnetron sputtering), the pattern is formed by wet etching, and the film is formed by chemical vapor deposition for the non-metal layer, and the pattern is formed by thousand etching.
  • the functional layers of the organic electroluminescent device can be formed by vapor deposition.
  • the AMOLED array substrate is fabricated by the method, and the area of the gate 2 and the source 3 of the thin film transistor 30 can be designed to be relatively small.
  • the AMOLED array substrate obtained by the method has a large pixel aperture ratio, which can make the display device
  • the display shield is greatly improved; the upper and lower plates of the storage capacitor 100' are electrically connected to the source 3 of the thin film transistor 30, and the stability of data transmission is better, which is more favorable for the brightness required by the display device to display the input signal.
  • the display shield is further enhanced.
  • the organic electroluminescent device after forming a thin film transistor on a substrate in the fabrication process of the AMOLED array substrate, it is also required to form a pattern of the bottom electrode 10a of the organic electroluminescent device, according to an embodiment of the present invention, the organic electroluminescent device
  • the pattern of the bottom electrode 10a and the pattern of the storage capacitor lower plate 9a are formed by the same patterning process (that is, a single mask is shared), which increases the pixel aperture ratio without increasing the manufacturing cost.
  • the gate 2 for connecting the thin film transistor 30 and the storage capacitor lower plate 9a are formed by the same patterning process.
  • the method can realize a reliable connection between the storage capacitor lower plate 9a and the gate 2, and the pattern of the first insulating layer via 13 and the pattern of the second insulating layer via 14 are formed by the same patterning process (ie, A common reticle) does not increase manufacturing costs.
  • the upper and lower plates of the storage capacitor 100' are different from the gate lines and the data lines, which greatly reduces the parasitic capacitance and improves the accuracy of data signal transmission.
  • the manufacturing method of this embodiment does not need to increase the number of use of the mask, and does not increase the patterning process, and the manufacturing cost of the array substrate is low.
  • the portion between the storage capacitor lower plate 9a and the storage capacitor upper plate 9b is made to have the smallest thickness, and can be fabricated by layering.
  • the method can reduce the area occupied by the storage capacitor 100' under the premise of satisfying the electrical performance requirements of the product, which is beneficial to further optimization of the structure.
  • the embodiment of the invention further provides a display device comprising the AMOLED array substrate of any of the foregoing embodiments.
  • the display device has a higher pixel aperture ratio and a better display shield.
  • the specific type of the display device is not limited, and may be, for example, an AMOLED display, an AMOLED TV, or the like.

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Abstract

一种有源矩阵有机电致发光器件阵列基板，包括：基板；位于基板上且阵列排布的多个像素单元，每个所述像素单元包括薄膜晶体管、有机电致发光器件和存储电容下极板，其中：所述存储电容下极板设置在所述薄膜晶体管的栅极的上方并与所述薄膜晶体管的栅极电连接；将相邻两个像素单元间隔的像素界定层；以及设置在像素界定层上的存储电容上极板，存储电容上极板与所述存储电容下极板之间通过像素界定层间隔。

Description

AMOLED阵列基板及制作方法和显示装置 本申请要求 2014年 4月 30 日提交的申请号为 201410183223.6的中国专利申请的 优先权， 其全部内容通过引用结合在本申请中。 技术领域
本发明的公开涉及显示技术领域，特别是涉及一种有源矩阵有机电致发光器件阵列 基板及制作方法和一种显示装置。 背景技术
OLED ( Organic Light-Emitting Diode, 有机电致发光器件， 筒称 OLED )依据驱动 方式的不同， 可分为无源矩阵驱动 (Passive Matrix, 筒称 PM) PMOLED与有源矩阵驱动 (Active Matrix , 筒称 AM) AMOLED两种。 AMOLED依据出光方式的不同可分为顶发 射型 （光从上基板射出）和底发射型 （光从下基板射出） 两种。
如图 1和图 2所示， 传统 AMOLED阵列基板的结构中， 存储电容 100设计在薄膜 晶体管 30的栅极 2与源极 3之间， 栅极 2与源极 3位置相对的部分充当存储电容 100 的两个极板， 栅极绝缘层 6充当电介盾。 由于栅极 2与源极 3材盾的不透光性， 大面积 的存储电容 100占用了很大的发光面积，从而致使像素的开口率较低（像素开口率指像 素可发光面积占像素面积的比率）； 其次， 存储电容 100的极板与栅线或数据线位于同 一层， 其间会产生很大的寄生电容， 从而影响到数据信号的传输及准确性； 再次， 由于 存储电容 100的极板与薄膜晶体管 30的源极 3连接， 源极 3的电位与流过薄膜晶体管 30的电流有关， 薄膜晶体管 30电流的变化也会引起源极 3电位的变化， 因此， 极易造 成数据信号的写入失真， AMOLED显示屏在点亮后会出现亮度跳变， 像素的亮度不能 满足灰阶信号所要求的亮度， 显示效果不够理想。 发明内容
本发明实施例提供了一种有源矩阵有机电致发光器件阵列基板及制作方法和一种 显示装置， 以提高显示装置的像素开口率， 提升显示品盾。
本发明实施例提供的有源矩阵有机电致发光器件阵列基板， 包括基板； 位于基板上 且阵列排布的多个像素单元，每个所述像素单元包括薄膜晶体管、有机电致发光器件和 存储电容下极板， 其中： 所述存储电容下极板设置在所述薄膜晶体管的栅极的上方并与所述薄膜晶体管的 栅极电连接；
将相邻两个像素单元间隔的像素界定层； 以及
设置在像素界定层上的存储电容上极板，存储电容上极板与所述存储电容下极板之 间通过像素界定层间隔。所述存储电容上极板可以与所述有机电致发光器件的顶电极电 连接。
在本发明的实施例的技术方案中， 存储电容上、 下极板之间通过像素界定层间隔， 像素界定层位于存储电容上、 下极板之间的部分充当存储电容的电介盾， 由于像素界定 层本身已占用一定的发光面积，存储电容的上、 下极板设置在像素界定层的两侧无需另 外再占用发光面积， 因此， 不透光的栅极和源极的面积可以设计的相对较小， 大大提高 了显示装置的像素开口率。
根据本发明的实施例，所述有机电致发光器件的顶电极位于所述存储电容下极板的 上方，所述有机电致发光器件的顶电极与所述存储电容下极板位置相对的部分作为存储 电容上极板。
在本发明的实施例的技术方案中， 存储电容上、 下极板之间通过像素界定层间隔， 像素界定层位于存储电容上、 下极板之间的部分充当存储电容的电介盾， 由于像素界定 层本身已占用一定的发光面积，存储电容的上、 下极板设置在像素界定层的两侧无需另 外再占用发光面积， 因此， 不透光的栅极和源极的面积可以设计的相对较小， 大大提高 了显示装置的像素开口率； 此外， 存储电容的上、 下极板与薄膜晶体管的源极无电性连 接， 数据传输的稳定性较好， 更有利于显示装置显示输入信号所要求的亮度， 显示品盾 进一步提升。
根据本发明的实施例，所述存储电容下极板与所述有机电致发光器件的底电极材盾 相同且位于同层。
釆用上述实施例的技术方案，存储电容下极板与有机电致发光器件的底电极可以通 过同一次构图工艺形成， 不增加制造成本。
根据本发明的实施例，所述存储电容下极板与所述薄膜晶体管的栅极通过第一绝缘 层过孔电连接。
该方案可实现存储电容下极板与栅极之间的可靠连接。 进一步， 存储电容的上、 下 极板与栅线和数据线均不同层， 大大降低了寄生电容， 提高了数据信号传输的准确性。
根据本发明的实施例， 所述像素界定层中，位于存储电容下极板与存储电容上极板 之间的部分厚度最小。 该方案可在满足产品电气性能要求的前提下减小存储电容所占用的面积，有利于结 构的进一步优化。
根据本发明的实施例， 所述像素界定层材盾包括有机树脂或二氧化硅。
本发明实施例还提供了一种显示装置，包括前述任一技术方案所述的有源矩阵有机 电致发光器件阵列基板。
该显示装置的像素开口率较高， 显示品盾较佳。
本发明实施例还提供了一种有源矩阵有机电致发光器件阵列基板的制作方法，包括 在基板上形成薄膜晶体管、有机电致发光器件和存储电容下极板的步骤， 该方法具体包 括：
形成与所述薄膜晶体管的栅极电连接的存储电容下极板的图形；
形成覆盖所述存储电容下极板的像素界定层的图形； 以及
在像素界定层上形成存储电容上极板的图形。所述存储电容上极板可以与所述有机 电致发光器件的顶电极电连接。
釆用上述技术方案， 薄膜晶体管的栅极和源极的面积可以设计的相对较小， 通过该 方法制得的有源矩阵有机电致发光器件阵列基板，像素开口率大大增加， 可使显示装置 的显示品盾大大提升。根据本发明的实施例，在像素界定层上形成存储电容上极板的图 形的步骤包括： 形成位于所述像素界定层之上的有机电致发光器件的顶电极的图形， 所 述有机电致发光器件的顶电极包括与所述存储电容下极板位置相对的、作为存储电容上 极板的部分。
釆用上述技术方案， 薄膜晶体管的栅极和源极的面积可以设计的相对较小， 通过该 方法制得的有源矩阵有机电致发光器件阵列基板，像素开口率大大增加， 可使显示装置 的显示品盾大大提升； 存储电容的上、 下极板与薄膜晶体管的源极无电性连接， 数据传 输的稳定性较好，更有利于显示装置显示输入信号所要求的亮度，显示品盾进一步提升。
根据本发明的实施例， 该方法还包括在基板上形成薄膜晶体管的步骤之后， 形成有 机电致发光器件的底电极的图形，所述有机电致发光器件的底电极的图形与所述存储电 容下极板的图形通过同一次构图工艺形成。该方法在增大像素开口率的同时不会增加制 造成本。
根据本发明的实施例， 该方法还包括： 在形成有机电致发光器件的底电极的图形与 存储电容下极板的图形之前，
通过同一次构图工艺形成用于连接薄膜晶体管的栅极与存储电容下极板的第一绝 缘层过孔的图形，以及用于连接薄膜晶体管的源极与有机电致发光器件的底电极的第二 绝缘层过孔的图形。
该方法可实现存储电容下极板与栅极之间的可靠连接， 并且， 第一绝缘层过孔的图 形与第二绝缘层过孔的图形通过同一次构图工艺形成， 不增加制造成本。 此外， 存储电 容的上、 下极板与栅线和数据线均不同层， 大大降低了寄生电容， 提高了数据信号传输 的准确性。
根据本发明的实施例，在形成所述像素界定层的图形时，位于存储电容下极板与存 储电容上极板之间的部分的制作厚度最小。该方法可在满足产品电气性能要求的前提下 减小存储电容所占用的面积， 有利于结构的进一步优化。 附图说明
图 1为传统的 AMOLED阵列基板的一个像素单元的截面结构示意图；
图 2为传统的 AMOLED阵列基板的存储电容连接结构电路图；
图 3为根据本发明的实施例的 AMOLED阵列基板的一个像素单元的截面结构示意 图；
图 4为根据本发明的实施例的 AMOLED阵列基板的存储电容连接结构电路图； 图 5为根据本发明的实施例的 AMOLED阵列基板的制作方法流程示意图。
附图标记：
30-薄膜晶体管； 50-有机电致发光器件； 100, 100'-存储电容；
I-基板； 2-栅极； 3-源极； 4-漏极； 5-有源层； 6-栅极绝缘层；
7-钝化层； 8-平坦层； 9a-存储电容下极板； 9b-存储电容上极板；
10a-有机电致发光器件的底电极； 10b-有机电致发光器件的顶电极；
II-像素界定层； 12-彩色光阻； 13-第一绝缘层过孔； 14-第二绝缘层过孔。 具体实施方式
为了提高显示装置的像素开口率，提升显示品盾， 本发明实施例提供了一种有源矩 阵有机电致发光器件（以下筒称 AMOLED ) 阵列基板及制作方法和一种显示装置。 在 本发明阵列基板的技术方案中， 存储电容上、 下极板之间通过像素界定层间隔， 像素界 定层位于存储电容上、 下极板之间的部分充当存储电容的电介盾， 由于像素界定层本身 已占用一定的发光面积，存储电容的上、 下极板设置在像素界定层的两侧无需另外再占 用发光面积， 因此， 不透光的栅极和源极的面积可以设计的相对较小， 大大提高了显示 装置的像素开口率。 为使本发明的实施例的技术方案和优点更加清楚，以下举实施例对本发明作进一步 详细说明。
如图 3和图 4所示， 本发明实施例提供的 AMOLED阵列基板， 包括基板 1和位于 基板 1上且阵列排布的多个像素单元， 每个像素单元包括薄膜晶体管 30、 有机电致发 光器件 50和存储电容下极板 9a, 其中：
存储电容下极板 9a设置在所述薄膜晶体管 30的栅极 2的上方并与薄膜晶体管 30 的栅极 2电连接。
阵列基板还包括将相邻两个像素单元间隔的像素界定层 11 ; 以及设置在像素界定 层 11上的存储电容上极板 9b, 存储电容上极板 9b与所述存储电容下极板 9a之间通过 像素界定层 11间隔。存储电容上极板 9b可以与有机电致发光器件的顶电极 10b电连接。
根据本发明的实施例， 有机电致发光器件的顶电极 10b位于存储电容下极板 9a的 上方, 有机电致发光器件的顶电极 10b与存储电容下极板 9a位置相对的部分作为存储 电容上极板 9b且与存储电容下极板 9a之间通过像素界定层 11间隔。
通过对比图 1和图 3可以看出， 图 1中，栅极 2的部分区域需要与源极 3的部分区 域位置相对， 形成存储电容 100, 为使存储电容值满足设计要求， 该部分区域的面积通 常设计的较大， 因此会影响到像素的开口率。 而在图 3中， 存储电容 100'上、 下极板之 间通过像素界定层 11间隔， 像素界定层 11位于存储电容 100'上、 下极板之间的部分充 当电介盾， 由于像素界定层 11本身已占用一定的发光面积， 存储电容 100'的上、 下极 板设置在像素界定层 11上下的两侧无需另外再占用发光面积， 因此， 不透光的栅极 2 和源极 3的面积可以设计的相对较小， 大大提高了显示装置的像素开口率。
此外， 存储电容 100'的上、 下极板与薄膜晶体管 30的源极 3无电性连接， 数据传 输的稳定性较好，更有利于显示装置显示输入信号所要求的亮度，显示品盾进一步提升。
根据本发明的实施例， 存储电容下极板 9a与有机电致发光器件的底电极 10a材盾 相同且位于同层， 这样存储电容下极板 9a与有机电致发光器件的底电极 10a可以通过 同一次构图工艺形成， 不会增加制造成本。
请继续参照图 3所示，存储电容下极板 9a与薄膜晶体管 30的栅极 2通过第一绝缘 层过孔 13电连接。该方案可实现存储电容下极板 9a与栅极 2之间的可靠连接。进一步， 存储电容 100'的上、 下极板与栅线和数据线均不同层， 能够大大降低寄生电容， 提高数 据信号传输的准确性， 提升显示品盾。
图 3所示实施例中， 像素界定层 11位于存储电容 100'上、 下极板之间的部分厚度 最小， 即像素界定层 11位于存储电容 100'区域的厚度小于其它区域的厚度。 由存储电 容值的计算公式 C = ^ ( C为存储电容值， ε为介电常数， 为存储电容极板面积， d d
为存储电容的介盾厚度）可知， 当存储电容值不变时， 存储电容极板面积与存储电容的 电介盾厚度成正比， 因此， 该方案可在满足产品电气性能要求的前提下减小存储电容 100'所占用的面积， 有利于结构的进一步优化。
在本发明技术方案中， 薄膜晶体管 30的结构可以为顶栅型， 也可以为底栅型， 有 机电致发光器件 50的出光方式既可以为顶发射型， 也可以为底发射型， 这里不作具体 限定。 此外， 有机电致发光器件 50可以为发红光、 绿光或者蓝光的发光器件， 也可以 为发白光的发光器件（为实现彩色显示， 需要设置对应的彩色光阻对白光进行滤光）。
图 3所示阵列基板的有机电致发光器件 50为底发射型， 有机电致发光器件发射白 光， 薄膜晶体管的结构为顶栅型， 每个像素单元的具体结构包括： 位于基板 1之上且位 置相对的源极 3和漏极 4; 位于源极 3和漏极 4的间隙上方的有源层 5; 位于有源层 5 之上的栅极绝缘层 6; 位于栅极绝缘层 6之上且与有源层 5位置相对的栅极 2; 覆盖栅 极 2的钝化层 7; 位于钝化层 7之上的彩色光阻 12; 覆盖彩色光阻 12的平坦层 8; 位 于平坦层 8之上的存储电容下极板 9a和有机电致发光器件的底电极 10a, 其中存储电 容下极板 9a通过第一绝缘层过孔 13与栅极 2电连接 (第一绝缘层过孔 13穿过平坦层 8和钝化层 7 ), 有机电致发光器件的底电极 10a与彩色光阻 12位置相对且通过第二绝 缘层过孔 14与源极 3电连接 (第二绝缘层过孔 14穿过平坦层 8、 钝化层 7和栅极绝缘 层 6 ); 位于有机电致发光器件的底电极 10a之上的其它相关功能层（包括发光层、 传 输层等）； 将相邻两个像素单元间隔的像素界定层 11 , 其中， 像素界定层 11 与存储电 容下极板 9a位置相对的部分厚度较薄； 以及位于像素界定层 11之上的有机电致发光器 件的顶电极 10b。
基板 1可以釆用玻璃基板、 树脂基板或者塑料基板等； 栅极 2、 源极 3和漏极 4的 具体材盾不限， 例如可以为铝、 铜、 钼等； 有源层 5可以釆用非晶硅、 多晶硅或者氧化 物半导体（例如铟镓锌氧化物或铪铟锌氧化物）等材质； 有机电致发光器件 50的底电 极、 顶电极和存储电容的下极板 9a可以釆用氧化铟 4易或者氧化铟锌等材盾； 栅极绝缘 层 6、 钝化层 7可以采用氮化硅材质； 平坦层 8可以采用有机树脂材质； 像素界定层 11 可以釆用有机树脂或二氧化硅等材盾。
如图 5所示， 本发明实施例还提供了一种 AMOLED阵列基板（可参照图 3所示） 的制作方法， 包括在基板上形成薄膜晶体管 30、 有机电致发光器件 50和存储电容下极 板 9a的步骤， 该方法具体包括： 步骤 101、 形成与薄膜晶体管 30的栅极 2电连接的存储电容下极板 9a的图形； 步骤 102、 形成覆盖存储电容下极板 9a的像素界定层 11的图形；
步骤 103、 在像素界定层 11上形成存储电容上极板 9b的图形。
根据本发明的实施例， 在像素界定层上形成存储电容上极板 9b的图形的步骤可以 包括： 形成位于像素界定层 11之上的有机电致发光器件的顶电极 10b的图形， 有机电 致发光器件的顶电极 10b包括与存储电容下极板 9a位置相对的、 作为存储电容上极板 的部分。
基板上各膜层的图形通常釆用构图工艺制作形成， 一次构图工艺通常包括基板清 洗、 成膜、 光刻胶涂覆、 曝光、 显影、 刻蚀、 光刻胶剥离等工序； 对于金属层通常釆用 物理气相沉积方式（例如磁控溅射法）成膜， 通过湿法刻蚀形成图形， 而对于非金属层 通常釆用化学气相沉积方式成膜， 通过千法刻蚀形成图形。有机电致发光器件的各功能 层可釆用蒸镀法形成。
釆用该方法制作 AMOLED阵列基板， 薄膜晶体管 30的栅极 2和源极 3的面积可 以设计的相对较小， 通过该方法制得的 AMOLED阵列基板， 像素开口率大大增加， 可 使显示装置的显示品盾大大提升； 存储电容 100'的上、 下极板与薄膜晶体管 30的源极 3无电性连接，数据传输的稳定性较好，更有利于显示装置显示输入信号所要求的亮度， 显示品盾进一步提升。
根据本发明的实施例， AMOLED阵列基板的制作过程中在基板上形成薄膜晶体管 之后， 还需要形成有机电致发光器件的底电极 10a的图形， 根据本发明的实施例， 有机 电致发光器件的底电极 10a的图形与存储电容下极板 9a的图形通过同一次构图工艺形 成（即可公用一张掩模板）， 该方法在增大像素开口率的同时不会增加制造成本。
此外， 在形成有机电致发光器件的底电极 10a的图形与存储电容下极板 9a的图形 之前， 通过同一次构图工艺形成用于连接薄膜晶体管 30的栅极 2与存储电容下极板 9a 的第一绝缘层过孔 13的图形，以及用于连接薄膜晶体管 30的源极 3与有机电致发光器 件的底电极 10a的第二绝缘层过孔 14的图形。该方法可实现存储电容下极板 9a与栅极 2之间的可靠连接， 并且， 第一绝缘层过孔 13的图形与第二绝缘层过孔 14的图形通过 同一次构图工艺形成（即可公用一张掩模板）， 不增加制造成本。 此外， 存储电容 100' 的上、 下极板与栅线和数据线均不同层， 大大降低了寄生电容， 提高了数据信号传输的 准确性。
该实施例的制作方法无需增加掩模板的使用数量， 不会增加构图工序， 阵列基板的 制造成本较低。 根据本发明的实施例， 在形成像素界定层 11的图形时， 位于存储电容下极板 9a与 存储电容上极板 9b之间的部分的制作厚度最小， 可釆用分层制作。 该方法可在满足产 品电气性能要求的前提下减小存储电容 100'所占用的面积， 有利于结构的进一步优化。
本发明实施例还提供了一种显示装置，包括前述任一实施例的 AMOLED阵列基板。 该显示装置的像素开口率较高， 显示品盾较佳。 显示装置的具体类型不限， 例如可以为 AMOLED显示器、 AMOLED电视等等。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神 和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围 之内， 则本发明也意图包含这些改动和变型在内。

Claims

权利 要 求
1、 一种有源矩阵有机电致发光器件阵列基板， 包括: 基板； 位于基板上且阵列排布的多个像素单元，每个所述像素单元包括薄膜晶体管、有机 电致发光器件和存储电容下极板， 其中： 所述存储电容下极板设置在所述薄膜晶体管的 栅极的上方并与所述薄膜晶体管的栅极电连接；
将相邻两个像素单元间隔的像素界定层； 以及
设置在像素界定层上的存储电容上极板，存储电容上极板与所述存储电容下极板之 间通过像素界定层间隔。
2、 如权利要求 1所述的阵列基板， 其中：
所述有机电致发光器件的顶电极位于所述存储电容下极板的上方，所述有机电致发 光器件的顶电极与所述存储电容下极板位置相对的部分作为存储电容上极板。
3、 如权利要求 1或 2所述的阵列基板， 其中：
4、 如权利要求 1或 2所述的阵列基板， 其中：
所述存储电容下极板与所述薄膜晶体管的栅极通过第一绝缘层过孔电连接。
5、 如权利要求 1~3任一项所述的阵列基板， 其中：
所述像素界定层中， 位于存储电容下极板与存储电容上极板之间的部分厚度最小。
6、 如权利要求 1~3任一项所述的阵列基板， 其中： 所述像素界定层材盾包括有机 树脂或二氧化硅。
7、 如权利要求 1所述的阵列基板， 其中：
所述存储电容上极板与所述有机电致发光器件的顶电极电连接。
8、 一种显示装置， 包括如权利要求 1~7任一项所述的有源矩阵有机电致发光器件 阵列基板。
9、 一种有源矩阵有机电致发光器件阵列基板的制作方法， 包括如下步骤： 在基板上形成薄膜晶体管；
形成与所述薄膜晶体管的栅极电连接的存储电容下极板的图形；
形成覆盖所述存储电容下极板的像素界定层的图形； 以及
在像素界定层上形成存储电容上极板的图形。
10、 如权利要求 9所述的制作方法， 其中：
在像素界定层上形成存储电容上极板的图形的步骤包括：
形成位于所述像素界定层之上的有机电致发光器件的顶电极的图形，所述有机电致 发光器件的顶电极包括与所述存储电容下极板位置相对的、 作为存储电容上极板的部 分。
11、 如权利要求 9或 10所述的制作方法， 还包括：
在基板上形成薄膜晶体管的步骤之后， 形成有机电致发光器件的底电极的图形， 所 述有机电致发光器件的底电极的图形与所述存储电容下极板的图形通过同一次构图工 艺形成。
12、 如权利要求 11所述的制作方法， 还包括：
在形成有机电致发光器件的底电极的图形与存储电容下极板的图形之前，通过同一 次构图工艺形成用于连接薄膜晶体管的栅极与存储电容下极板的第一绝缘层过孔的图 形，以及用于连接薄膜晶体管的源极与有机电致发光器件的底电极的第二绝缘层过孔的 图形。
13、 如权利要求 9~12任一项所述的制作方法， 其中：
在形成所述像素界定层的图形时，位于存储电容下极板与存储电容上极板之间的部 分的制作厚度最小。
14、 如权利要求 9所述的制作方法， 其中：
所述存储电容上极板与所述有机电致发光器件的顶电极电连接。
PCT/CN2014/085411 2014-04-30 2014-08-28 Amoled阵列基板及制作方法和显示装置 Ceased WO2015165184A1 (zh)

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