WO2015165244A1 - 柔性基板、oled器件及其不良检测方法 - Google Patents

柔性基板、oled器件及其不良检测方法 Download PDF

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WO2015165244A1
WO2015165244A1 PCT/CN2014/090800 CN2014090800W WO2015165244A1 WO 2015165244 A1 WO2015165244 A1 WO 2015165244A1 CN 2014090800 W CN2014090800 W CN 2014090800W WO 2015165244 A1 WO2015165244 A1 WO 2015165244A1
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barrier layer
crack
layer
flexible substrate
oled device
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French (fr)
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刘陆
谢明哲
黄维
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to EP14861124.7A priority Critical patent/EP3067951B1/en
Priority to US14/443,537 priority patent/US9761815B2/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/70Testing, e.g. accelerated lifetime tests
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/30Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/311Flexible OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Definitions

  • OLED devices generally use a plastic substrate as a flexible substrate. Since the water vapor and oxygen (hereinafter referred to as water and oxygen) transmittance of the plastic substrate are both high, it is necessary to form a barrier film in the flexible substrate to prevent Water and oxygen infiltration.
  • silicon nitride is usually deposited in a flexible substrate. Material (SiNx) and silicon oxide material (SiOx) form a barrier layer.
  • the thickness of the first barrier layer is smaller than the thickness of the second barrier layer, and the thickness of the first barrier layer ranges from The thickness of the second barrier layer is
  • the present invention also provides a method for detecting a defect of the above flexible substrate, comprising:
  • the present invention also provides a method for detecting a defect of the above OLED device, comprising:
  • the OLED device in the case where the color is a non-transparent color, it is determined that the OLED device has a defect, and in a case where the color is a transparent color, determining that the OLED device is not defective or the OLED device is defective. But the defect is not caused by the barrier layer in the OLED device.
  • FIG. 1B is a schematic diagram of detecting whether a flexible substrate is caused by a crack in a barrier layer according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural view of a flexible substrate according to Embodiment 2 of the present invention.
  • Embodiment 3 is a schematic structural view of a flexible substrate according to Embodiment 3 of the present invention.
  • FIG. 4A is a schematic diagram of detecting whether an OLED device is caused by a crack in a barrier layer according to Embodiment 4 of the present invention.
  • 4C is a diagram of determining whether an OLED device is bent due to a fourth embodiment of the present invention. Schematic diagram of crack detection.
  • a flexible substrate comprising a bottom plate and a barrier layer disposed above the bottom plate, the flexible substrate further comprising a crack detecting layer, the crack detecting layer being disposed adjacent to the barrier layer, the crack detecting layer being When the barrier layer generates a crack, cracks are generated, and the crack detecting layer having the crack and the crack detecting layer having no crack are different in color in an energized state.
  • the barrier layer includes a first barrier layer 2 and a second barrier layer 4.
  • the flexible substrate further includes a crack detecting layer 3, and in the present embodiment, the crack detecting layer 3 is disposed between the first barrier layer 2 and the second barrier layer 4. Due to the particularity of the material forming the crack detecting layer 3 (see below), the crack detecting layer 3 is in the first barrier layer 2 and / When the second barrier layer 4 is cracked, a fracture will occur to cause cracks.
  • the crack detecting layer 3 having cracks and the crack detecting layer 3 having no cracks have different colors in the energized state.
  • the crack detecting layer 3 is formed of an electrochromic material.
  • the crack detecting layer 3 without cracks is transparent in an energized state, and the crack detecting layer 3 having cracks is non-transparent in an energized state.
  • color Electrochromism refers to the phenomenon that the optical properties (reflectance, transmittance, absorptivity, etc.) of a material undergo a stable and reversible color change under the action of an applied electric field, and the appearance is a reversible change in color and transparency.
  • Electrochromic materials have good ionic and electronic conductivity, high contrast, color change efficiency, cycle time, write-erase efficiency and other electrochromic properties.
  • the electrochromic material comprises an inorganic electrochromic material and an organic electrochromic material. It is further preferred that the inorganic electrochromic material comprises tungsten trioxide WO 3 , titanium dioxide TiO 2 or vanadium pentoxide V 2 O 5 , and the organic electrochromic material comprises polythiophene and its derivatives, viologen, four Thioflavene or metal phthalocyanine compounds. Wherein, the thickness of the crack detecting layer 3 may be
  • the bottom plate 1 is generally a plastic substrate, and the first barrier layer 2 and the second barrier layer 4 are formed of an inorganic material.
  • the first barrier layer 2 is formed by using a silicon nitride material SiNx to obtain a better water blocking and oxygen barrier effect; and the second barrier layer 4 is formed by using a silicon oxide material SiOx to obtain a better balance stress of the flexible substrate.
  • the first barrier layer 2 formed using the silicon nitride material SiNx is closer to the substrate 1 than the second barrier layer 4 formed using the silicon oxide material SiOx;
  • the thickness of the first barrier layer 2 is smaller than the thickness of the second barrier layer 4, for example, the thickness of the first barrier layer 2 formed using the silicon nitride material SiNx is in the range of
  • the thickness of the second barrier layer 4 formed using the silicon oxide material SiOx is in the range of
  • the crack detecting layer 3 is preferably formed of an inorganic material to cause cracks. The detection layer 3 achieves better matching with the first barrier layer 2 and the second barrier layer 4.
  • the bottom plate 1 is first disposed on the stage 6, and then the first barrier layer 2, the crack detecting layer 3 and the second barrier layer 4 are sequentially formed above the bottom plate 1. .
  • the first barrier layer 2, the crack detection layer 3 and the second barrier layer 4 are formed by chemical vapor deposition (CVD) to obtain a more uniform layer structure.
  • CVD chemical vapor deposition
  • the crack detecting layer 3 it can be electrically tested immediately to ensure that the crack detecting layer 3 itself does not have cracks.
  • the first barrier layer 2 composed of the silicon nitride material SiNx and the silicon oxide material SiOx are described. Any one of the two barrier layers 4 has no crack; when the color of the crack detecting layer 3 in the energized state is a non-transparent color, the first barrier layer 2 composed of the silicon nitride material SiNx and the first layer of the silicon oxide material SiOx are illustrated. At least one of the two barrier layers 4 creates a crack.
  • the present embodiment provides a flexible substrate. Unlike the first embodiment, the crack detecting layer 3 in the flexible substrate of the present embodiment is adjacent only to the first barrier layer 2.
  • the first barrier layer 2 is closer to the bottom plate 1 than the second barrier layer 4, and the crack detecting layer 3 is disposed only adjacent to the second barrier layer 4, that is, the crack detecting layer 3 is disposed on the second barrier layer 4. Aside from the side of the base plate 1.
  • the other structure of the flexible substrate in this embodiment is the same as that of the first embodiment.
  • the method for detecting whether the barrier layer in the flexible substrate has cracks by the crack detecting layer is the same as that of the first embodiment, and details are not described herein again.
  • the crack detecting layer may be disposed on either side of the first barrier layer and the second barrier layer as long as the crack detecting layer is ensured to be associated with at least one of the first barrier layer and the second barrier layer.
  • the adjacent setting can be performed, and the specific setting position of the crack detecting layer is not limited. Therefore, in practical applications, the position at which the crack detecting layer is disposed can be determined according to the specific structure of the flexible substrate, that is, the setting of the crack detecting layer is flexible and convenient.
  • Case 3 The OLED device after peeling is normal, and the OLED device after bending is defective, and the detection failure is caused by the crack of the barrier layer.
  • the color indicates that the defect of the OLED device is not caused by cracks in the first barrier layer 2 and/or the second barrier layer 4, but may be caused by defective TFT or other causes; if the color of the crack detecting layer 3 is in an energized state In the case of a non-transparent color, the reason why the OLED device is defective is that at least one of the first barrier layer 2 and the second barrier layer 4 has a crack.
  • Case 2 The OLED device before peeling is normal, and the OLED device after peeling is defective, and whether the detection defect is caused by the crack of the barrier layer.
  • the crack detecting layer 3 is energized. It is checked whether the color of the crack detecting layer 3 in the energized state is a transparent color or a non-transparent color.
  • the color of the crack detecting layer 3 in the energized state is a transparent color, it means that both the first barrier layer 2 and the second barrier layer 4 have no crack; in this case, the OLED device is peeled off from the stage 6; then, The stripped OLED device is energized again to observe whether the color of the crack detecting layer 3 in the energized state is a transparent color or a non-transparent color, and if it is a transparent color, the first barrier layer 2 and the second barrier layer 4 are illustrated. There is no crack, and if it is a non-transparent color, it indicates that at least one of the first barrier layer 2 and the second barrier layer 4 has a crack.
  • the stripping process can be appropriately modified to reduce The defect rate of OLED devices, thereby reducing the losses due to the stripping process.
  • Case 3 The OLED device after peeling is normal, and the OLED device after bending is defective, and the detection failure is caused by the crack of the barrier layer.
  • the crack detecting layer 3 is energized to observe whether the color of the crack detecting layer 3 in the energized state is a transparent color or a non-transparent color.
  • the color of the crack detecting layer 3 in the energized state is a transparent color, it means that both the first barrier layer 2 and the second barrier layer 4 have no crack; in this case, the OLED device is bent by using a bending jig; The crack detecting layer 3 of the bent OLED device is energized again, and it is observed whether the color of the crack detecting layer 3 in the energized state is a transparent color or a non-transparent color. If the color of the crack detecting layer 3 in the energized state is a transparent color, it means that the first barrier layer 2 and the second barrier layer 4 have no cracks. If the color of the crack detecting layer 3 in the energized state is a non-transparent color, At least one of the barrier layer 2 and the second barrier layer 4 has a crack.
  • the OLED device can be any display device, such as an electronic paper, an OLED panel, a mobile phone, a tablet computer, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • the product yield of the OLED device is correspondingly improved, and the display effect is improved.
  • the crack detecting layer 3 is formed of an electrochromic material (including an inorganic electrochromic material and an organic electrochromic material), the crack detecting layer 3 without cracks is energized.
  • the lower surface is a transparent color, and the crack detecting layer 3 having a crack is a non-transparent color in the energized state.
  • the present invention is not limited thereto.
  • the crack detecting layer 3 having cracks in itself generates cracks when at least one of the first barrier layer 2 and the second barrier layer 4 is cracked, and the crack detecting layer 3 and the crack-free crack detecting layer 3 are energized.
  • the color of the lower layer may be different, and the material of the crack detecting layer 3 of the present invention is not limited to the electrochromic material.

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Abstract

一种柔性基板、包括该柔性基板的OLED器件及其不良检测方法。该柔性基板包括底板以及设置于所述底板(1)上方的阻挡层(2,4),所述柔性基板还包括裂缝检测层(3),所述裂缝检测层(3)与所述阻挡层(2,4)相邻设置,所述裂缝检测层(3)在所述阻挡层(2,4)产生裂缝时产生裂缝,有裂缝的所述裂缝检测层(3)与没有裂缝的所述裂缝检测层(3)在通电状态下的颜色不同。该柔性基板和该OLED器件使得具有较高的检测效率,并且保证了检测效果的准确性,提高了柔性基板和OLED器件的产品良率。

Description

柔性基板、OLED器件及其不良检测方法 技术领域
本发明属于显示技术领域,具体涉及一种柔性基板、一种OLED器件及其不良检测方法。
背景技术
有机电致发光二极管(Organic Light-Emitting Diode,简称OLED)器件因具有多种优点而获得了越来越多的研究者的关注和研究,这些优点例如包括:制作成本低、全固态、主动发光、亮度高、对比度高、低电压直流驱动、低功耗、视角宽、响应速度快、厚度薄、工作温度范围宽、可实现柔性显示(flexible display)等。尤其是其具有柔性显示的特点,使其能够弯曲从而被广泛应用于需要曲面显示的领域,如智能卡、电子纸、智能标签应用等,正逐渐成为显示技术领域的新宠。
通常,OLED器件至少包括阳极、阴极以及位于阳极和阴极之间的发光层,阴极一般采用活泼金属形成,发光层一般采用有机发光材料形成。其中,OLED器件中的有机发光材料和阴极对水气和氧气特别敏感,因此OLED器件对水气和氧气的阻隔要求比较高。例如:以OLED器件的寿命为一万小时计算,并以OLED器件中低功函数(如,镁的功函数和钙的功函数)失效所需的水气量和氧气量的最低值来估算水气和氧气对OLED器件封装的渗透率,得出要求用于OLED器件封装的材料的水气透过率为<10-6g/m2/天,氧气透过率为<10-5-10-3cm3/m2/天。
OLED器件一般采用塑料基板作为柔性基板(flexible substrate),由于塑料基板的水气和氧气(以下简称水氧)透过率均较高,因此需要在柔性基板中制作阻挡层(barrier film)以防止水氧的渗透。目前,通常采用在柔性基板中沉积氮化硅材 料(SiNx)和氧化硅材料(SiOx)的方式来形成阻挡层,由于SiNx和SiOx均为无机材料,在弯折过程中容易产生裂缝(crack);而且,为了防止水氧通过接触孔(pin hole)渗入OLED器件内部,需要SiNx和SiOx具有一定的厚度以达到阻水阻氧的作用,而SiNx和SiOx膜层厚度的增加,又进一步增加了产生裂缝的可能性。阻挡层裂缝(barrier film crack)会导致OLED器件出现不良。通常,在OLED器件发生不良时,该OLED器件中的薄膜晶体管(Thin Film Transistor,简称TFT)的不良很容易通过电性能的改变来判断;而由该OLED器件中的阻挡层的裂缝导致的不良则需要使用显微镜来观察,而使用显微镜观察存在制样复杂,不容易找到不良点、耗时长等问题,不仅检测效率低而且检测结果准确性不高,因而无法对产生不良的环节进行有效地控制,从而导致OLED器件产品良率较低。
发明内容
本发明所要解决的技术问题是针对现有技术中存在的上述不足,提供一种柔性基板、包括该柔性基板的OLED器件及其不良检测方法,该柔性基板和该OLED器件使得具有较高的检测效率,并且保证了检测效果的准确性,因而能够对产生不良的环节进行有效地控制,从而提高了柔性基板和OLED器件的产品良率。
解决本发明技术问题所采用的技术方案是一种柔性基板,该柔性基板包括底板以及设置于所述底板上方的阻挡层,所述柔性基板还包括裂缝检测层,所述裂缝检测层与所述阻挡层相邻设置,所述裂缝检测层在所述阻挡层产生裂缝时产生裂缝,有裂缝的所述裂缝检测层与没有裂缝的所述裂缝检测层在通电状态下的颜色不同。
优选的是,所述阻挡层包括第一阻挡层和第二阻挡层,
所述裂缝检测层与所述第一阻挡层和所述第二阻挡层中的一个相邻设置;或者,所述裂缝检测层设置于所述第一阻挡层和所述第二阻挡层之间;以及
所述裂缝检测层在所述第一阻挡层和所述第二阻挡层中的至少一个产生裂缝时产生裂缝。
优选的是,所述裂缝检测层采用电致变色材料形成,没有裂缝的所述裂缝检测层在通电状态下为透明色,有裂缝的所述裂缝检测层在通电状态下为非透明色。
优选的是,所述电致变色材料为无机电致变色材料或有机电致变色材料。
优选的是,所述无机电致变色材料包括三氧化钨、二氧化钛或五氧化二钒,所述有机电致变色材料包括聚噻吩类及其衍生物、紫罗精类、四硫富瓦烯或金属酞菁类化合物。
优选的是,所述裂缝检测层的厚度范围为
Figure PCTCN2014090800-appb-000001
优选的是,所述裂缝检测层采用化学气相沉积法形成。
优选的是,所述底板为塑料基板,所述第一阻挡层和所述第二阻挡层采用无机材料形成。
优选的是,所述第一阻挡层相对于所述第二阻挡层更靠近所述底板,所述第一阻挡层采用氮化硅材料形成,所述第二阻挡层采用氧化硅材料形成。
优选的是,所述第一阻挡层的厚度小于所述第二阻挡层的厚度,所述第一阻挡层的厚度范围为
Figure PCTCN2014090800-appb-000002
所述第二阻挡层的厚度范围为
Figure PCTCN2014090800-appb-000003
一种OLED器件,包括上述的柔性基板。
本发明还提供了一种上述柔性基板的不良检测方法,包括:
对所述柔性基板中的裂缝检测层进行通电;
检测所述裂缝检测层在通电状态下的颜色;以及
通过所述颜色来确定所述柔性基板是否存在不良。
优选的是,在所述颜色为非透明色的情况下,确定所述柔性基板存在不良,在所述颜色为透明色的情况下,确定所述柔性基板不存在不良或者所述柔性基板存在不良但不良不是由所述柔性基板中的阻挡层引起。
本发明还提供了一种上述OLED器件的不良检测方法,包括:
对所述OLED器件中的裂缝检测层进行通电;
检测所述裂缝检测层在通电状态下的颜色;以及
通过所述颜色来确定所述OLED器件是否存在不良。
优选的是,在所述颜色为非透明色的情况下,确定所述OLED器件存在不良,在所述颜色为透明色的情况下,确定所述OLED器件不存在不良或者所述OLED器件存在不良但不良不是由所述OLED器件中的阻挡层引起。
本发明的有益效果是:本发明中的柔性基板通过增设由电致变色材料形成的裂缝检测层,能通过裂缝检测层在通电状态下的颜色来检测阻挡层是否有裂缝,相对于现有技术中使用放大镜来观察以检测阻挡层是否有裂缝的方式,更易于判断柔性基板和OLED器件的不良是否由阻挡层的裂缝引起;同时,还省去了放大镜观察制样的程序,并且避免了制样时不易找到不良点的缺点,节省了时间,使得具有较高的检测效率,并且保证了检测效果的准确性,因而能够对产生不良的环节进行有效地控制,从而提高了柔性基板和OLED器件的产品良率。
附图说明
图1为本发明实施例1中柔性基板的结构示意图。
图1A为本发明实施例1中柔性基板的制备示意图。
图1B为本发明实施例1中判断柔性基板是否由阻挡层裂缝引起不良的检测示意图。
图2为本发明实施例2中柔性基板的结构示意图。
图3为本发明实施例3中柔性基板的结构示意图。
图4为本发明实施例4中OLED器件的结构示意图。
图4A为本发明实施例4中判断OLED器件是否由阻挡层裂缝引起不良的检测示意图。
图4B为本发明实施例4中判断OLED器件是否因剥离而产生裂缝的检测示意图。
图4C为本发明实施例4中判断OLED器件是否因弯折而产生 裂缝的检测示意图。
附图标记:1-底板;2-第一阻挡层;3-裂缝检测层;4-第二阻挡层;5-显示层;6-载台。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明的柔性基板和OLED器件作进一步详细描述。
一种柔性基板,包括底板以及设置于所述底板上方的阻挡层,所述柔性基板还包括裂缝检测层,所述裂缝检测层与所述阻挡层相邻设置,所述裂缝检测层在所述阻挡层产生裂缝时产生裂缝,有裂缝的所述裂缝检测层与没有裂缝的所述裂缝检测层在通电状态下的颜色不同。
一种OLED器件,包括上述的柔性基板。
上述的柔性基板,由于采用了与所述阻挡层相邻设置的裂缝检测层,通过检测裂缝检测层在通电状态下的颜色,可以很方便地检测出柔性基板中的阻挡层是否有裂缝,检测方便且结果准确。
相应地,可以对柔性基板和OLED器件的制备过程中可能产生不良的环节进行控制,使得柔性基板和OLED器件的良率得到提高。
实施例1:
本实施例提供一种柔性基板,该柔性基板包括底板以及设置于底板上方的阻挡层,还包括裂缝检测层,裂缝检测层与阻挡层相邻设置,所述裂缝检测层在所述阻挡层产生裂缝时产生裂缝,有裂缝的裂缝检测层与没有裂缝的裂缝检测层在通电状态下的颜色不同。
如图1所示,阻挡层包括第一阻挡层2和第二阻挡层4。所述柔性基板还包括裂缝检测层3,在本实施例中,裂缝检测层3设置于第一阻挡层2和第二阻挡层4之间。由于形成裂缝检测层3的材料(参见下文)的特殊性,裂缝检测层3在第一阻挡层2和/ 或第二阻挡层4产生裂缝时将发生断裂,从而产生裂缝。而有裂缝的裂缝检测层3和没有裂缝的裂缝检测层3在通电状态下的颜色不同。因此,通过检测裂缝检测层3在通电状态下的颜色,就可以确定裂缝检测层3是否有裂缝,进而确定第一阻挡层2和/或第二阻挡层4是否有裂缝。其中,对裂缝检测层3通电时,所施加的电压的范围为1-5V。
应当理解的是,在本发明中,在对裂缝检测层3进行通电时,还需要在裂缝检测层3的两侧(例如,相对的两侧)设置用于通电的正电极和负电极。
例如,裂缝检测层3采用电致变色(electrochromic)材料形成,在此情况下,没有裂缝的裂缝检测层3在通电状态下为透明色,有裂缝的裂缝检测层3在通电状态下为非透明色。电致变色是指材料的光学属性(反射率、透过率、吸收率等)在外加电场的作用下发生稳定、可逆的颜色变化的现象,在外观上表现为颜色和透明度的可逆变化。电致变色材料具有良好的离子和电子导电性、较高的对比度、变色效率、循环周期、写-擦效率等电致变色性能。
优选的是,所述电致变色材料包括无机电致变色材料和有机电致变色材料。进一步优选的是,无机电致变色材料包括三氧化钨WO3、二氧化钛TiO2或五氧化二钒V2O5,有机电致变色材料包括聚噻吩类及其衍生物、紫罗精类、四硫富瓦烯或金属酞菁类化合物。其中,裂缝检测层3的厚度范围可以为
Figure PCTCN2014090800-appb-000004
在本实施例中,底板1一般为塑料基板,第一阻挡层2和第二阻挡层4采用无机材料形成。其中,第一阻挡层2采用氮化硅材料SiNx形成,以获得较好的阻水阻氧的效果;第二阻挡层4采用氧化硅材料SiOx形成,以使得柔性基板获得较好的平衡应力。为保证较好的阻水阻氧效果和柔性基板的结构,采用氮化硅材料SiNx形成的第一阻挡层2相对于采用氧化硅材料SiOx形成的第二阻挡层4更靠近底板1;同时,第一阻挡层2的厚度小于第二阻挡层4的厚度,例如:采用氮化硅材料SiNx形成的第一阻挡层2的 厚度范围为
Figure PCTCN2014090800-appb-000005
采用氧化硅材料SiOx形成的第二阻挡层4的厚度范围为
Figure PCTCN2014090800-appb-000006
由于性质较接近的材料具有更好的匹配性,而本实施例中由于第一阻挡层2和第二阻挡层4均采用无机材料形成,因而裂缝检测层3优选采用无机材料形成,以使得裂缝检测层3与第一阻挡层2和第二阻挡层4获得更好的匹配性。
如图1A所示,在制备本实施例的柔性基板时,首先将底板1设置于载台6上,接着在底板1上方依次形成第一阻挡层2、裂缝检测层3和第二阻挡层4。其中,形成第一阻挡层2、裂缝检测层3和第二阻挡层4均采用化学气相沉积法(Chemical Vapor Deposition,简称CVD)形成,以便获得更均匀的层结构。在裂缝检测层3形成后,可立即对其进行通电检测,以确保裂缝检测层3本身不存在裂缝,当然,也可以同时确定已形成的第一阻挡层2是否有裂缝,以便及时对制备工艺进行改进,从而提高柔性基板的产品良率。
本实施例通过在第一阻挡层2和第二阻挡层4之间加入了一层由电致变色材料形成的裂缝检测层3,由于形成裂缝检测层3的材料的特殊性,任一层阻挡层(仅第一阻挡层2,或仅第二阻挡层4,或第一阻挡层2和第二阻挡层4)有裂缝均将导致裂缝检测层3随之发生断裂,从而产生裂缝,因此,通过检测裂缝检测层3在通电状态下的颜色,可以判断进行柔性基板剥离或者柔性弯折等操作时,第一阻挡层2和/或第二阻挡层4是否产生了裂缝。
如图1B所示,对柔性基板进行检测时,当裂缝检测层3在通电状态下的颜色为透明色时,说明氮化硅材料SiNx组成的第一阻挡层2和氧化硅材料SiOx组成的第二阻挡层4中的任一个均没有裂缝;当裂缝检测层3在通电状态下的颜色为非透明色时,说明氮化硅材料SiNx组成的第一阻挡层2和氧化硅材料SiOx组成的第二阻挡层4中的至少一个产生了裂缝。
当检测到柔性基板的裂缝检测层3在通电状态下的颜色为非透明色(即,第一阻挡层2和第二阻挡层4中的至少一个有裂缝) 时,可适当调整阻挡层制备过程中的制备设备的参数,避免继续生产出不良的柔性基板,从而提高柔性基板的产品良率。
实施例2:
本实施例提供一种柔性基板,与实施例1不同的是,本实施例的柔性基板中的裂缝检测层3仅与第一阻挡层2相邻。
如图2所示,第一阻挡层2相对于第二阻挡层4更靠近底板1,裂缝检测层3与第一阻挡层2和底板1相邻设置,即裂缝检测层3设置于底板1与第一阻挡层2之间。
本实施例中柔性基板的其他结构与实施例1的相同,通过裂缝检测层检测柔性基板中的阻挡层是否有裂缝的方法与实施例1的相同,这里不再赘述。
实施例3:
本实施例提供一种柔性基板,与实施例1不同的是,本实施例的柔性基板中的裂缝检测层3仅与第二阻挡层4相邻。
如图3所示,第一阻挡层2相对于第二阻挡层4更靠近底板1,裂缝检测层3仅与第二阻挡层4相邻设置,即裂缝检测层3设置于第二阻挡层4的远离底板1的一侧。
本实施例中柔性基板的其他结构与实施例1的相同,通过裂缝检测层检测柔性基板中的阻挡层是否有裂缝的方法与实施例1的相同,这里不再赘述。
从实施例1-3可以看出,裂缝检测层可以设置在第一阻挡层与第二阻挡层的任意一侧,只要保证裂缝检测层与第一阻挡层和第二阻挡层中的至少一个相邻设置即可,而对裂缝检测层的具体设置位置不做限定。因此,在实际应用中,裂缝检测层的设置位置可以根据柔性基板的具体结构来确定,即,裂缝检测层的设置是灵活且方便的。
实施例4:
本实施例提供一种OLED器件,该OLED器件采用实施例1-3所提供的柔性基板中的任一种柔性基板。
如图4所示,柔性基板上方设置有显示层5,显示层5包括薄膜晶体管(Thin Film Transistor,简称TFT)以及有机电致发光二极管OLED。以采用实施例1中的柔性基板的结构形成OLED器件为例,在制备本实施例的OLED器件时,首先将底板1设置于载台6上,接着在底板1上方依次形成第一阻挡层2、裂缝检测层3和第二阻挡层4,然后形成TFT以及OLED。
以采用实施例1中的柔性基板的结构形成OLED器件为例,检测OLED器件在以下三种情况是否不良和/或不良的原因:
情况一:OLED器件出现不良,检测不良是否由阻挡层裂缝所导致;
情况二:剥离前的OLED器件正常,剥离后的OLED器件出现不良,检测不良是否由阻挡层裂缝所导致;
情况三:剥离后的OLED器件正常,弯折后的OLED器件出现不良,检测不良是否由阻挡层裂缝所导致。
情况一:OLED器件出现不良时,检测不良是否由阻挡层裂缝所导致。如图4A所示,在将OLED器件从载台6上剥离之前,将裂缝检测层3通电,观察裂缝检测层3在通电状态下的颜色,如果裂缝检测层3在通电状态下的颜色为透明色,则说明OLED器件的不良的原因不是第一阻挡层2和/或第二阻挡层4有裂缝,而可能是由TFT不良或其他原因引起的;如果裂缝检测层3在通电状态下的颜色为非透明色,则说明OLED器件的不良的原因是第一阻挡层2和第二阻挡层4中的至少一个阻挡层有了裂缝。
通过上述检测,可确定OLED器件的不良是否由阻挡层的裂缝引起,从而可以缩小判断批量OLED器件不良的原因的范围,提高检测效率。
情况二:剥离前的OLED器件正常,剥离后的OLED器件出现不良,检测不良是否由阻挡层的裂缝所导致。如图4B所示,首先,在将OLED器件从载台6上剥离之前,先将裂缝检测层3通电,观 察裂缝检测层3在通电状态下的颜色是透明色还是非透明色。如果裂缝检测层3在通电状态下的颜色是透明色,则说明第一阻挡层2和第二阻挡层4均没有裂缝;在此情况下,将OLED器件从载台6上剥离;然后,对剥离下来的OLED器件,将裂缝检测层3再次通电,观察裂缝检测层3在通电状态下的颜色是透明色还是非透明色,如果是透明色则说明第一阻挡层2和第二阻挡层4均没有裂缝,如果是非透明色则说明第一阻挡层2和第二阻挡层4中的至少一个有裂缝。
通过上述检测,可以排除阻挡层是否在剥离过程中产生裂缝,从而导致OLED器件的不良:当检测到OLED器件因剥离工艺而有较大的不良率时,可适当对剥离工艺进行改进,以降低OLED器件的不良率,从而减少因剥离工艺带来的损失。
情况三:剥离后的OLED器件正常,弯折后的OLED器件出现不良,检测不良是否由阻挡层裂缝所导致。如图4C所示,首先,在将OLED器件弯折之前,先将裂缝检测层3通电,观察裂缝检测层3在通电状态下的颜色是透明色还是非透明色。如果裂缝检测层3在通电状态下的颜色是透明色,则说明第一阻挡层2和第二阻挡层4均没有裂缝;在此情况下,采用弯折治具将OLED器件弯折;然后,对弯折后的OLED器件的裂缝检测层3再次通电,观察裂缝检测层3在通电状态下的颜色是透明色还是非透明色。如果裂缝检测层3在通电状态下的颜色是透明色,则说明第一阻挡层2和第二阻挡层4均没有裂缝,如果裂缝检测层3在通电状态下的颜色是非透明色,则说明第一阻挡层2和第二阻挡层4中的至少一个有裂缝。
通过上述检测,可以确定阻挡层是否在弯折过程中产生裂缝,从而导致OLED器件的不良。
通过上述三种情况的检测,可以逐步确定OLED器件产生不良的原因,确定导致OLED器件产生不良的环节,使得OLED器件可能产生不良的环节可控,从而提高OLED器件的检测效率,并且保证检测效果的准确性。
本实施例中OLED器件作为一种显示装置,可以为:电子纸、OLED面板、手机、平板电脑、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本实施例中的OLED器件,由于采用了具有较高良率的柔性基板,因此相应地提高了OLED器件的产品良率,提高了显示效果。
本发明中的柔性基板通过增设由电致变色材料形成的裂缝检测层,能通过检测裂缝检测层在通电状态下的颜色来检测阻挡层是否有裂缝,可以在任何方便的环节对柔性基板或对OLED器件中的阻挡层是否有裂缝进行检测,相对于现有技术中使用放大镜来观察以检测阻挡层的裂缝的方式,更易于判断OLED器件不良是否由阻挡层的裂缝引起;同时,还省去了放大镜观察制样的程序,并且避免了制样时不易找到不良点的缺点,节省了时间,使得具有较高的检测效率,并且保证了检测效果的准确性,因而能够对产生不良的环节进行有效地控制,从而提高了柔性基板和OLED器件的产品良率。
应当理解的是,虽然在上述各个实施例中,以电致变色材料(包括无机电致变色材料和有机电致变色材料)来形成裂缝检测层3,从而没有裂缝的裂缝检测层3在通电状态下为透明色,有裂缝的裂缝检测层3在通电状态下为非透明色为例进行了描述,但是本发明不限于此。只要本身没有裂缝的裂缝检测层3在第一阻挡层2和第二阻挡层4中的至少一个产生裂缝时产生裂缝、并且有裂缝的裂缝检测层3与没有裂缝的裂缝检测层3在通电状态下的颜色不同即可,本发明的裂缝检测层3的材料并不限于所述电致变色材料。
应当理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也属于本发明的保护范围。

Claims (15)

  1. 一种柔性基板,包括底板以及设置于所述底板上方的阻挡层,其特征在于,所述柔性基板还包括裂缝检测层,所述裂缝检测层与所述阻挡层相邻设置,所述裂缝检测层在所述阻挡层产生裂缝时产生裂缝,有裂缝的所述裂缝检测层与没有裂缝的所述裂缝检测层在通电状态下的颜色不同。
  2. 根据权利要求1所述的柔性基板,其特征在于,
    所述阻挡层包括第一阻挡层和第二阻挡层,
    所述裂缝检测层与所述第一阻挡层和所述第二阻挡层中的一个相邻设置;或者,所述裂缝检测层设置于所述第一阻挡层和所述第二阻挡层之间;以及
    所述裂缝检测层在所述第一阻挡层和所述第二阻挡层中的至少一个产生裂缝时产生裂缝。
  3. 根据权利要求1或2所述的柔性基板,其特征在于,所述裂缝检测层采用电致变色材料形成,没有裂缝的所述裂缝检测层在通电状态下为透明色,有裂缝的所述裂缝检测层在通电状态下为非透明色。
  4. 根据权利要求3所述的柔性基板,其特征在于,所述电致变色材料为无机电致变色材料或有机电致变色材料。
  5. 根据权利要求4所述的柔性基板,其特征在于,所述无机电致变色材料包括三氧化钨、二氧化钛或五氧化二钒,所述有机电致变色材料包括聚噻吩类及其衍生物、紫罗精类、四硫富瓦烯或金属酞菁类化合物。
  6. 根据权利要求1-5中任一项所述的柔性基板,其特征在于, 所述裂缝检测层的厚度范围为
    Figure PCTCN2014090800-appb-100001
  7. 根据权利要求1-6中任一项所述的柔性基板,其特征在于,所述裂缝检测层采用化学气相沉积法形成。
  8. 根据权利要求2所述的柔性基板,其特征在于,所述底板为塑料基板,所述第一阻挡层和所述第二阻挡层采用无机材料形成。
  9. 根据权利要求2或8所述的柔性基板,其特征在于,所述第一阻挡层相对于所述第二阻挡层更靠近所述底板,所述第一阻挡层采用氮化硅材料形成,所述第二阻挡层采用氧化硅材料形成。
  10. 根据权利要求2、8或9所述的柔性基板,其特征在于,所述第一阻挡层的厚度小于所述第二阻挡层的厚度,所述第一阻挡层的厚度范围为
    Figure PCTCN2014090800-appb-100002
    所述第二阻挡层的厚度范围为
    Figure PCTCN2014090800-appb-100003
  11. 一种OLED器件,其特征在于,包括根据权利要求1-10中任一项所述的柔性基板。
  12. 一种根据权利要求1-10中任一项所述的柔性基板的不良检测方法,包括:
    对所述柔性基板中的裂缝检测层进行通电;
    检测所述裂缝检测层在通电状态下的颜色;以及
    通过所述颜色来确定所述柔性基板是否存在不良。
  13. 根据权利要求12所述的不良检测方法,其中:
    在所述颜色为非透明色的情况下,确定所述柔性基板存在不良,在所述颜色为透明色的情况下,确定所述柔性基板不存在不 良或者所述柔性基板存在不良但不良不是由所述柔性基板中的阻挡层引起。
  14. 一种根据权利要求11所述的OLED器件的不良检测方法,包括:
    对所述OLED器件中的裂缝检测层进行通电;
    检测所述裂缝检测层在通电状态下的颜色;以及
    通过所述颜色来确定所述OLED器件是否存在不良。
  15. 根据权利要求14所述的不良检测方法,其中:
    在所述颜色为非透明色的情况下,确定所述OLED器件存在不良,在所述颜色为透明色的情况下,确定所述OLED器件不存在不良或者所述OLED器件存在不良但不良不是由所述OLED器件中的阻挡层引起。
PCT/CN2014/090800 2014-04-29 2014-11-11 柔性基板、oled器件及其不良检测方法 Ceased WO2015165244A1 (zh)

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