WO2016008144A1 - 波长选择开关和选择波长的方法 - Google Patents

波长选择开关和选择波长的方法 Download PDF

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Publication number
WO2016008144A1
WO2016008144A1 PCT/CN2014/082454 CN2014082454W WO2016008144A1 WO 2016008144 A1 WO2016008144 A1 WO 2016008144A1 CN 2014082454 W CN2014082454 W CN 2014082454W WO 2016008144 A1 WO2016008144 A1 WO 2016008144A1
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WO
WIPO (PCT)
Prior art keywords
microring
region
junction
tuning module
dual
Prior art date
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Ceased
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PCT/CN2014/082454
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English (en)
French (fr)
Inventor
马骁
张学仓
杨建义
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Priority to EP14897551.9A priority Critical patent/EP3156832B1/en
Priority to CN201480037316.6A priority patent/CN105452921B/zh
Priority to JP2017501674A priority patent/JP2017527842A/ja
Priority to PCT/CN2014/082454 priority patent/WO2016008144A1/zh
Publication of WO2016008144A1 publication Critical patent/WO2016008144A1/zh
Priority to PH12016502497A priority patent/PH12016502497B1/en
Priority to US15/408,745 priority patent/US9829767B2/en
Anticipated expiration legal-status Critical
Priority to US15/822,933 priority patent/US10551717B2/en
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31—Digital deflection, i.e. optical switching
    • G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
    • G02F1/3133—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type the optical waveguides being made of semiconducting materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29331—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by evanescent wave coupling
    • G02B6/29335—Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity
    • G02B6/29338—Loop resonators
    • G02B6/29343—Cascade of loop resonators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
    • G02B6/2938—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device for multiplexing or demultiplexing, i.e. combining or separating wavelengths, e.g. 1xN, NxM
    • G02B6/29382—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device for multiplexing or demultiplexing, i.e. combining or separating wavelengths, e.g. 1xN, NxM including at least adding or dropping a signal, i.e. passing the majority of signals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
    • G02B6/29395—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device configurable, e.g. tunable or reconfigurable
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/35—Optical coupling means having switching means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on thermo-optic effects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
    • G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/05—Function characteristic wavelength dependent
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/15—Function characteristic involving resonance effects, e.g. resonantly enhanced interaction

Definitions

  • the present invention relates to the field of information and communication technologies and, more particularly, to wavelength selective switches and methods of selecting wavelengths. Background technique
  • Reconfigurable optical furrow multiplexed devices are one of the core components in wavelength division multiplexed optical interconnect systems, and the non-interference (Hitless) wavelength selective switch is a key component of the device.
  • the interference-free wavelength selective switch in traditional optical communication is mostly based on switching technologies such as Micro-Electro-Mechanical System (MEMS). It is bulky and slow, and is not suitable for WDM and WCH optical interconnected wavelength division multiplexing.
  • MEMS Micro-Electro-Mechanical System
  • WDM and WCH optical interconnected wavelength division multiplexing The internet. Inter-chip, especially on-chip optical interconnects require a small, fast, high-density integrated interference-free wavelength selection switch.
  • the wavelength selective switches of the five-layer antisymmetric coupled quantum well serial 2nd and 4th order microring structures based on InGaAs/InAlAs materials are not compatible with the silicon CMOS process, and the wavelength range is not adjustable, so it is not suitable for high density.
  • Integrated optical interconnect Integrated optical interconnect. Summary of the invention
  • Embodiments of the present invention provide a wavelength selective switch and a method of selecting a wavelength, which are suitable for high density integrated optical interconnection.
  • a wavelength selective switch including:
  • a dual microring resonator comprising a first microring and a second microring in series, the first microring and the second microring being silicon-based microring waveguides each comprising a circular PN junction, the first microring
  • the annular PN junction and the annular PN junction of the second microring have the same direction;
  • An electrical tuning module the first electrical port of the electrical tuning module is connected to the P zone of the first microring and the N zone of the second microring, the second electrical port of the electrical tuning module and the N of the first microring a region is connected to the P region of the second microring, the electrical tuning module is configured to apply an opposite bias voltage to the annular PN junction of the first microring and the annular PN junction of the second microring;
  • a thermal tuning module for adjusting the operating temperature of the dual microring resonator.
  • the electrical tuning module is configured to apply an opposite bias voltage to the annular PN junction of the first microring and the annular PN junction of the second microring.
  • the refractive indices of the first microring and the second microring are oppositely changed to make the double microring resonator In a state of detuning;
  • the thermal tuning module is configured to adjust an operating temperature of the dual microring resonator to change a resonant wavelength of the dual microring resonator;
  • the electrical tuning module is further configured to stop applying an opposite bias voltage to the annular PN junction of the first microring and the annular PN junction of the second microring to make the dual microring resonator have a resonant wavelength after the change It is in a state of resonance.
  • the first microring and the second microring are ridge waveguides.
  • the thermal tuning module includes:
  • a temperature detector for detecting the temperature of the dual microring resonator
  • a semiconductor refrigerator for changing a temperature of the dual microring resonator
  • control chip for controlling the working state of the semiconductor cooler according to the result of the temperature detector detection to adjust the operating temperature of the dual microring resonator.
  • a portion of the first microring and the second microring that is near a center of the microring is a P zone, and a portion away from a center of the microring It is the N zone, or the part near the center of the T ring is the N zone, and the part far from the center of the T ring is the P zone.
  • the P area of the first micro ring and the P area of the second micro ring include a P++ area
  • the N of the first micro ring The region and the N region of the second microring comprise an N++ region.
  • a method of selecting a wavelength by a wavelength selective switch comprising a dual microring resonator, an electrical tuning module and a thermal tuning module
  • the dual microring resonator comprises a first micro in series a ring and a second microring
  • the first microring and the second microring are silicon-based microring waveguides and each comprising a ring-shaped PN junction, a ring-shaped PN junction of the first micro-ring and a ring-shaped PN of the second micro-ring
  • the first electrical port of the electrical tuning module is connected to the P region of the first microring and the N region of the second microring, and the second electrical port of the electrical tuning module and the first microring
  • the N region is connected to the P region of the second microring;
  • the method includes:
  • the electrical tuning module applies an opposite bias voltage to the annular PN junction of the first microring and the annular PN junction of the second microring, such that the refractive indices of the first microring and the second microring are opposite. Change , so that the double microring resonator is in a detuned state;
  • the thermal tuning module adjusts an operating temperature of the dual microring resonator to change a resonant wavelength of the dual microring resonator
  • the electrical tuning module stops applying an opposite bias voltage to the annular PN junction of the first microring and the annular PN junction of the second microring to cause the dual microring resonator to resonate at the changed resonant wavelength status.
  • the first microring and the second microring are ridge waveguides.
  • the thermal tuning module includes a temperature detector, a semiconductor cooler, and a control chip;
  • the thermal tuning module adjusts an operating temperature of the dual microring resonator, including:
  • the control chip controls the operating state of the semiconductor cooler according to the result of the temperature detector detection to adjust the operating temperature of the dual microring resonator.
  • a portion of the first microring and the second microring that is near a center of the microring is a P zone, and a portion away from a center of the microring It is the N zone, or the part near the center of the microring is the N zone, and the part far from the center of the microring is the P zone.
  • the P area of the first micro ring and the P area of the second micro ring include a P++ area
  • the N of the first micro ring The region and the N region of the second microring comprise an N++ region.
  • the wavelength selective switch and the method for selecting a wavelength use a silicon-based dual micro-ring resonator, which is compatible with a silicon complementary metal oxide semiconductor (CMOS) process;
  • CMOS silicon complementary metal oxide semiconductor
  • the tuning module and the thermal tuning module cooperate to electrically tune and thermally tune the dual microring resonator, which can achieve interference-free wavelength selection and wide wavelength adjustment range, so it is suitable for high-density integrated optical interconnection.
  • FIG. 1 is a schematic structural view of a wavelength selective switch according to an embodiment of the present invention.
  • Fig. 2 is a schematic view showing the structure of a microring cross section at the position of the cross section shown in Fig. 1.
  • 3a to 3d are output spectrum diagrams of a dual microring resonator of an embodiment of the present invention.
  • FIG. 4 is a schematic flow chart of a method of selecting a wavelength according to an embodiment of the present invention. detailed description
  • FIG. 1 shows a schematic structural view of a wavelength selective switch 100 according to an embodiment of the present invention.
  • the wavelength selective switch 100 includes: a dual microring resonator 110, an electrical tuning module 120, and a thermal tuning module 130.
  • the dual microring resonator 110 includes a first microring 111 and a second microring 112 connected in series. That is, the first microring 111 and the second microring 112 are cascaded in series to form a double microring resonator 110.
  • the first microring 111 and the second microring 112 are silicon-based microring waveguides and each include an annular PN junction, and the annular PN junction of the first microring 111 and the annular PN junction of the second microring 112 have the same direction.
  • a portion of the first microring 111 and the second microring 112 near the center of the microring is a P region, and a portion away from the center of the microring is an N region; or, a portion near a center of the microring is an N region, away from the microring.
  • the part of the center is the P area.
  • the P++ region may be further included in the P region, and the N++ region may be further included in the N region.
  • Fig. 2 is a view showing the structure of a microring cross section at the position of the cross section shown in Fig. 1.
  • the portion near the center of the microring is the P region, and the portion away from the center of the microring is the N region; the P region contains the P++ region, and the N region contains the N++ region.
  • FIG. 2 is only an example and should not be construed as limiting the scope of the present invention.
  • PN junction in the embodiment of the present invention can be converted into a PIN junction, a metal oxide semiconductor (MOS) junction, etc., and these transformations should also fall within the scope of the present invention.
  • MOS metal oxide semiconductor
  • the first microring 111 and the second microring 112 are ridge waveguides.
  • it may be a ridge waveguide as shown in FIG. 2.
  • the first electrical port 121 of the electrical tuning module 120 and the P region and the second microring 112 of the first microring 111 The N-zones are connected, and the second electrical port 122 of the electrical tuning module 120 is connected to the N-zone of the first micro-ring 111 and the P-region of the second micro-ring 112.
  • the electrical tuning module 120 is configured to apply opposite bias voltages to the annular PN junction of the first microring 111 and the annular PN junction of the second microring 112.
  • the electrical tuning module 120 does not apply a voltage
  • the resonant wavelengths of the first microring 111 and the second microring 112 are the same, and the dual microring resonator 110 is in a resonant state.
  • the annular PN junction of the second microring 112 When the negative voltage is output 121, the annular PN junction of the second microring 112 is in a forward bias state, the annular PN junction of the first microring 111 is in a reverse bias state, and the two microrings of the dual microring resonator 110 are The refractive index changes inversely, and the resonant wavelengths are different, thereby achieving a detuned state.
  • the thermal tuning module 130 is operative to regulate the operating temperature of the dual microring resonator 110.
  • the thermal tuning module 130 shifts the output spectrum of the dual microring resonator 110 by adjusting the operating temperature of the dual microring resonator 110 to change the resonant wavelength of the dual microring resonator 110.
  • the thermal tuning module 130 can also be used to maintain the operating temperature of the dual microring resonator 110 to withstand the effects of ambient temperature changes.
  • the thermal tuning module 130 can include a temperature probe, a semiconductor cooler, and a control chip.
  • the temperature detector is used to detect the temperature of the double microring resonator 110; the semiconductor refrigerator is used to change the temperature of the double microring resonator 110; the control chip is used to control the working state of the semiconductor refrigerator according to the result of the temperature detector detection, to adjust the double The operating temperature of the microring resonator 110.
  • thermal tuning module 130 can also be constructed of other temperature-regulating devices, for example, the temperature of the dual micro-ring resonator 110 can be varied by a heating galvanic couple.
  • the electrical tuning module 120 is configured to apply an opposite bias voltage to the annular PN junction of the first microring 111 and the annular PN junction of the second microring 112 to make the first micro
  • the refractive indices of the ring 111 and the second microring 112 are reversely changed to cause the double microring resonator 110 to be in a detuned state;
  • the thermal tuning module 130 is configured to adjust the operating temperature of the dual microring resonator 110 to change the resonant wavelength of the dual microring resonator 110;
  • the electrical tuning module 120 is further configured to stop applying opposite bias voltages to the annular PN junction of the first microring 111 and the annular PN junction of the second microring 112, so that the dual microring resonator 110 is changed.
  • the resonant wavelength is in a resonant state.
  • the electrical tuning module 120 when the electrical tuning module 120 does not apply a voltage, the resonant wavelengths of the first microring 111 and the second microring 112 are the same, and the dual microring resonator 110 is in a resonant state. At this time, the output spectrum of the double microring resonator 110 is as shown in Fig. 3a, and the double microring resonator 110 resonates at wavelengths of 1546 nm and 1556 nm. When it is desired to select other wavelengths, the electrical tuning module 120 applies opposite bias voltages to the annular PN junction of the first microring 111 and the annular PN junction of the second microring 112, the first microring 111 and the second microring 112.
  • the output spectrum of the double microring resonator 110 is as shown in Fig. 3b, and the double microring resonator 110 is no longer resonating at wavelengths of 1546 nm and 1556 nm, and is in a detuned state.
  • the thermal tuning module 130 adjusts the operating temperature of the dual microring resonator 110 to cause the output spectrum of the dual microring resonator 110 to drift as a whole, changing the resonant wavelength of the dual microring resonator 110.
  • the operating temperature of the dual microring resonator 110 is adjusted to the condition that the double microring resonator 110 resonates at the expected new resonant wavelength.
  • the output pupil of the dual microring resonator 110 drifts as a whole, and the expected new resonant wavelengths are around 1543 nm, 1551 nm and 1559 nm.
  • the electrical tuning module 120 no longer applies a voltage, that is, the electrical tuning module 120 stops applying opposite bias voltages to the annular PN junction of the first microring 111 and the annular PN junction of the second microring 112.
  • the ring resonator 110 is in a resonant state at the changed resonant wavelength (i.e., the expected new resonant wavelength). As shown in Figure 3d, after the electrical tuning module 120 stops applying voltage, the dual microring resonator 110 resonates at wavelengths of 1543 nm, 1551 nm, and 1559 nm. Thus, the interference-free wavelength selection can be achieved by the state change of the resonance-detuning-resonance of the double microring resonator.
  • first microring 111 and the second microring 112 in the embodiment of the present invention may be simultaneously replaced with a structure of an even number of microrings connected in series.
  • first microring 111 is replaced with two microrings and the second microring 112 is replaced with four microrings. These substitutions are also intended to fall within the scope of the present invention.
  • the circular PN junction is used to realize the refractive index modulation of the waveguide of the microring, so that the carrier of the waveguide core region is extracted by the reverse bias voltage to change the refractive index of the waveguide, and no conduction current is generated. Therefore, heat is not generated to destroy the hitless characteristics of the entire device.
  • the modulation of the reverse PN junction can keep the characteristics of the hitless for a long time.
  • the wavelength selective switch of the embodiment of the present invention has superior performance in both the wavelength adjustable range and the tuning time.
  • the wavelength selective switch of the embodiment of the invention uses a silicon-based double micro-ring resonator, which can be combined with silicon
  • the wavelength selective switch of the embodiment of the present invention is suitable for high-density integrated optical interconnection.
  • the wavelength selective switch of the embodiment of the present invention has been described in detail above, and a method of selecting a wavelength by the wavelength selective switch of the embodiment of the present invention will be described below.
  • the wavelength selective switch is the wavelength selective switch 100 of the embodiment of the present invention.
  • the method 400 includes:
  • the electrical tuning module applies an opposite bias voltage to the annular PN junction of the first microring and the annular PN junction of the second microring, such that the refractive indices of the first microring and the second microring are oppositely changed. , so that the double microring resonator is in a detuned state;
  • the thermal tuning module adjusts an operating temperature of the dual microring resonator, and changes a resonant wavelength of the dual microring resonator;
  • the electrical tuning module stops applying an opposite bias voltage to the annular PN junction of the first microring and the annular PN junction of the second microring, so that the dual microring resonator is at the changed resonant wavelength In resonance.
  • the thermal tuning module adjusts an operating temperature of the dual microring resonator, including:
  • the control chip controls the operating state of the semiconductor cooler according to the result of the temperature detector detection to adjust the operating temperature of the dual microring resonator.
  • the respective flows in the method 400 for selecting wavelengths according to embodiments of the present invention may be performed and implemented by respective components in the wavelength selective switch 100 according to an embodiment of the present invention, and are not described herein again for brevity.
  • the electrical tuning module and the thermal tuning module cooperatively perform electrical tuning and thermal tuning on the silicon-based dual microring resonator to achieve interference-free wavelength selection.
  • the size of the sequence numbers of the above processes does not mean the order of execution, and the order of execution of each process should be determined by its function and internal logic, and should not be taken to the embodiments of the present invention.
  • the implementation process constitutes any limitation.
  • the disclosed systems, devices, and methods may be implemented in other ways.
  • the device embodiments described above are merely illustrative.
  • the division of the unit is only a logical function division.
  • there may be another division manner for example, multiple units or components may be combined or Can be integrated into another system, or some features can be ignored, or not executed.
  • the mutual coupling or direct connection or communication connection shown or discussed may be an indirect connection or communication connection through some interface, device or unit, or may be an electrical, mechanical or other form. connection.
  • the components displayed for the unit may or may not be physical units, ie may be located in one place, or may be distributed over multiple network units. Some or all of the units may be selected according to actual needs to achieve the objectives of the embodiments of the present invention.
  • each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.
  • the above integrated unit can be implemented in the form of hardware or in the form of a software functional unit.
  • the integrated unit if implemented in the form of a software functional unit and sold or used as a standalone product, may be stored in a computer readable storage medium.
  • the technical solution of the present invention contributes in essence or to the prior art, or all or part of the technical solution may be embodied in the form of a software product stored in a storage medium.
  • a number of instructions are included to cause a computer device (which may be a personal computer, server, or network device, etc.) to perform all or part of the steps of the methods described in various embodiments of the present invention.
  • the foregoing storage medium includes: a USB flash drive, a removable hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, and the like. .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

一种波长选择开关和波长选择方法，包括：双微环谐振器，包括串联的第一微环（111）和第二微环（112），该第一微环（111）和该第二微环（112）为硅基微环且各包含一个环形PN结，该第一微环的环形PN结和该第二微环的环形PN结的方向相同；电调谐模块（120），该电调谐模块（120）的第一电端口与该第一微环（111）的P区和该第二微环（112）的N区相连，该电调谐模块（120）的第二电端口与该第一微环（111）的N区和该第二微环（112）的P区相连，该电调谐模块（120）用于向该第一微环111的环形PN结和该第二微环（112）的环形PN结施加方向相反的偏置电压；热调谐模块（130），用于调节该双微环谐振器的工作温度。该开关适合高密度集成光互连。

Description

波长选择开关和选择波长的方法 技术领域
本发明涉及信息与通信技术领域， 并且更具体地， 涉及波长选择开关和 选择波长的方法。 背景技术
可重构光分叉复用器件是波分复用光互连系统中的核心器件之一， 而无 干扰（Hitless ) 波长选择开关是该器件的关键元件。 传统光通信中的无干扰 波长选择开关多基于微机电系统（ Micro-Electro-Mechanical System， MEMS ) 等开关技术，体积大，速度慢，不适合用于片间和片上光互连波分复用网络。 片间， 特别是片上光互连需要体积小， 速度快， 便于高密度集成的无干扰波 长选择开关。 另外， 基于 InGaAs/InAlAs材料的五层反对称耦合量子井串行 2阶和 4阶微环结构的波长选择开关， 和硅 CMOS工艺不兼容， 波长可调范 围不大， 因此也不适合高密度集成光互连。 发明内容
本发明实施例提供了一种波长选择开关和选择波长的方法，适合高密度 集成光互连。
第一方面， 提供了一种波长选择开关， 包括：
双微环谐振器， 包括串联的第一微环和第二微环， 该第一微环和该第二 微环为硅基微环波导且各包含一个环形 PN结， 该第一微环的环形 PN结和 该第二微环的环形 PN结的方向相同；
电调谐模块，该电调谐模块的第一电端口与该第一微环的 P区和该第二 微环的 N区相连， 该电调谐模块的第二电端口与该第一微环的 N区和该第 二微环的 P区相连， 该电调谐模块用于向该第一微环的环形 PN结和该第二 微环的环形 PN结施加方向相反的偏置电压；
热调谐模块， 用于调节该双微环谐振器的工作温度。
结合第一方面， 在第一种可能的实现方式中， 该电调谐模块用于向该第 一微环的环形 PN结和该第二微环的环形 PN结施加方向相反的偏置电压， 使该第一微环和该第二微环的折射率发生相反的变化， 以使该双微环谐振器 处于失谐状态；
该热调谐模块用于调节该双微环谐振器的工作温度， 改变该双微环谐振 器的谐振波长；
该电调谐模块还用于停止向该第一微环的环形 PN结和该第二微环的环 形 PN结施加方向相反的偏置电压， 以使该双微环谐振器在改变后的谐振波 长处处于谐振状态。
结合第一方面或其上述可能的实现方式， 在第二种可能的实现方式中， 该第一微环和该第二微环为脊形波导。
结合第一方面或其上述可能的实现方式， 在第三种可能的实现方式中， 该热调谐模块包括：
温度探测器， 用于探测该双微环谐振器的温度；
半导体制冷器， 用于改变该双微环谐振器的温度；
控制芯片，用于根据该温度探测器探测的结果控制该半导体制冷器的工 作状态， 以调节该双微环谐振器的工作温度。
结合第一方面或其上述可能的实现方式， 在第四种可能的实现方式中， 该第一微环和该第二微环的靠近微环中心的部分为 P区，远离微环中心的部 分为 N区， 或者， 靠近T环中心的部分为 N区， 远离 T环中心的部分为 P 区。
结合第一方面或其上述可能的实现方式， 在第五种可能的实现方式中， 该第一微环的 P区和该第二微环的 P区包含 P++区，该第一微环的 N区和该 第二微环的 N区包含 N++区。
第二方面， 提供了一种由波长选择开关选择波长的方法， 该波长选择开 关包括双微环谐振器， 电调谐模块和热调谐模块， 其中， 该双微环谐振器包 括串联的第一微环和第二微环， 该第一微环和该第二微环为硅基微环波导且 各包含一个环形 PN结， 该第一微环的环形 PN结和该第二微环的环形 PN 结的方向相同，该电调谐模块的第一电端口与该第一微环的 P区和该第二微 环的 N区相连， 该电调谐模块的第二电端口与该第一微环的 N区和该第二 微环的 P区相连；
该方法包括：
该电调谐模块向该第一微环的环形 PN结和该第二微环的环形 PN结施 加方向相反的偏置电压，使该第一微环和该第二微环的折射率发生相反的变 化， 以使该双微环谐振器处于失谐状态；
该热调谐模块调节该双微环谐振器的工作温度， 改变该双微环谐振器的 谐振波长；
该电调谐模块停止向该第一微环的环形 PN结和该第二微环的环形 PN 结施加方向相反的偏置电压， 以使该双微环谐振器在改变后的谐振波长处处 于谐振状态。
结合第二方面， 在第一种可能的实现方式中， 该第一微环和该第二微环 为脊形波导。
结合第二方面或其上述可能的实现方式， 在第二种可能的实现方式中， 该热调谐模块包括温度探测器、 半导体制冷器和控制芯片；
该热调谐模块调节该双微环谐振器的工作温度， 包括：
该控制芯片根据该温度探测器探测的结果控制该半导体制冷器的工作 状态， 以调节该双微环谐振器的工作温度。
结合第二方面或其上述可能的实现方式， 在第三种可能的实现方式中， 该第一微环和该第二微环的靠近微环中心的部分为 P区，远离微环中心的部 分为 N区， 或者， 靠近微环中心的部分为 N区， 远离微环中心的部分为 P 区。
结合第二方面或其上述可能的实现方式， 在第四种可能的实现方式中， 该第一微环的 P区和该第二微环的 P区包含 P++区，该第一微环的 N区和该 第二微环的 N区包含 N++区。
基于上述技术方案， 本发明实施例的波长选择开关和选择波长的方法， 釆用硅基双微环谐振器， 可以与硅互补金属氧化物半导体（Complementary Metal Oxide Semiconductor, CMOS )工艺兼容； 通过电调谐模块和热调谐模 块协同对双微环谐振器进行电调谐和热调谐， 可以实现无干扰波长选择， 波 长可调范围大， 因此适合高密度集成光互连。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对本发明实施例中 所需要使用的附图作简单地介绍， 显而易见地， 下面描述中的附图仅仅是本 发明的一些实施例， 对于本领域普通技术人员来讲， 在不付出创造性劳动的 前提下， 还可以根据这些附图获得其他的附图。 图 1是本发明实施例的波长选择开关的结构示意图。
图 2是图 1所示的截面位置处的微环截面的结构示意图。
图 3a至图 3d是本发明实施例的双微环谐振器的输出光谱图。
图 4是本发明实施例的选择波长的方法的示意性流程图。 具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行 清楚、 完整地描述， 显然， 所描述的实施例是本发明的一部分实施例， 而不 是全部实施例。 基于本发明中的实施例， 本领域普通技术人员在没有作出创 造性劳动的前提下所获得的所有其他实施例， 都应属于本发明保护的范围。
图 1示出了根据本发明实施例的波长选择开关 100的结构示意图。如图 1所示， 波长选择开关 100包括： 双微环谐振器 110， 电调谐模块 120和热 调谐模块 130。
双微环谐振器 110包括串联的第一微环 111和第二微环 112。也就是说， 第一微环 111和第二微环 112通过串联的方式级联，构成双微环谐振器 110。 第一微环 111和第二微环 112为硅基微环波导且各包含一个环形 PN结， 第 一微环 111的环形 PN结和第二微环 112的环形 PN结的方向相同。 具体地， 第一微环 111和第二微环 112的靠近微环中心的部分为 P区， 远离微环中心 的部分为 N区； 或者， 靠近微环中心的部分为 N区， 远离微环中心的部分 为 P区。 可选地， 在 P区中还可以进一步包含 P++区， 在 N区中还可以进一 步包含 N++区。
图 2示出了图 1所示的截面位置处的微环截面的结构示意图。在图 2中， 靠近微环中心的部分为 P区， 远离微环中心的部分为 N区； 在 P区中包含 P++区， 在 N区中包含 N++区。 应理解， 图 2只是一种示例， 不应对本发明 的保护范围构成限制。
应理解， 本发明实施例中的 PN结， 可以变换为 PIN结， 金属氧化物半 导体（Metal Oxide Semiconductor, MOS )结等， 这些变换也应落入本发明 的保护范围之内。
可选地， 在本发明的一个实施例中， 第一微环 111和第二微环 112为脊 形波导。 例如， 可以为如图 2所示的脊形波导。
电调谐模块 120的第一电端口 121与第一微环 111的 P区和第二微环 112 的 N区相连， 电调谐模块 120的第二电端口 122与第一微环 111的 N区和 第二微环 112的 P区相连。 电调谐模块 120用于向第一微环 111的环形 PN 结和第二微环 112的环形 PN结施加方向相反的偏置电压。
当电调谐模块 120不施加电压时， 第一微环 111和第二微环 112的谐振 波长相同， 双微环谐振器 110处于谐振状态。
当双微环谐振器 110的第一微环 111的环形 PN结和第二微环 112的环 形 PN结被施加方向相反的偏置电压时， 第一微环 111和第二微环 112的折 射率会发生相反的变化， 因此， 第一微环 111和第二微环 112的谐振波长会 不同， 从而双微环谐振器 110处于失谐状态。
以图 2所示的 PN结为例， 当第二电端口 122输出正电压， 第一电端口
121输出负电压时， 第二微环 112的环形 PN结处于正向偏置状态， 第一微 环 111的环形 PN结处于反向偏置状态， 双微环谐振器 110的两个微环的折 射率发生相反的变化， 进而谐振波长不同， 从而达到失谐状态。
热调谐模块 130用于调节双微环谐振器 110的工作温度。热调谐模块 130 通过调节双微环谐振器 110的工作温度， 使双微环谐振器 110的输出光谱整 体发生漂移， 改变双微环谐振器 110的谐振波长。 热调谐模块 130还可以用 于维持双微环谐振器 110的工作温度， 从而抵御环境温度变化的影响。
可选地， 热调谐模块 130可以包括温度探测器、 半导体制冷器和控制芯 片。 温度探测器用于探测双微环谐振器 110的温度； 半导体制冷器用于改变 双微环谐振器 110的温度； 控制芯片用于根据温度探测器探测的结果控制半 导体制冷器的工作状态， 以调节双微环谐振器 110的工作温度。
应理解， 热调谐模块 130也可以由其他调节温度的器件构成， 例如， 可 以由加热电偶改变双微环谐振器 110的温度。
可选地，作为本发明的一个实施例，电调谐模块 120用于向第一微环 111 的环形 PN结和第二微环 112的环形 PN结施加方向相反的偏置电压， 使第 一微环 111和第二微环 112的折射率发生相反的变化，以使双微环谐振器 110 处于失谐状态；
热调谐模块 130用于调节双微环谐振器 110的工作温度， 改变双微环谐 振器 110的谐振波长；
电调谐模块 120还用于停止向第一微环 111的环形 PN结和第二微环 112 的环形 PN结施加方向相反的偏置电压， 以使双微环谐振器 110在改变后的 谐振波长处处于谐振状态。
具体而言， 当电调谐模块 120不施加电压时， 第一微环 111和第二微环 112的谐振波长相同， 双微环谐振器 110处于谐振状态。 此时， 双微环谐振 器 110的输出光谱如图 3a所示，双微环谐振器 110在波长 1546nm和 1556nm 附近发生谐振。 在需要选择其他波长时， 电调谐模块 120向第一微环 111的 环形 PN结和第二微环 112的环形 PN结施加方向相反的偏置电压， 第一微 环 111和第二微环 112的折射率会发生相反的变化， 谐振波长会不同， 双微 环谐振器 110处于失谐状态。 此时， 双微环谐振器 110的输出光谱如图 3b 所示， 双微环谐振器 110在波长 1546nm和 1556nm附近不再谐振， 处于失 谐状态。 然后， 热调谐模块 130调节双微环谐振器 110的工作温度， 使双微 环谐振器 110的输出光谱整体发生漂移，改变双微环谐振器 110的谐振波长。 也就是说， 调节双微环谐振器 110的工作温度达到双微环谐振器 110在预期 的新的谐振波长处发生谐振的条件。 如图 3c所示， 双微环谐振器 110的输 出光语整体发生漂移， 预期的新的谐振波长为 1543nm， 1551nm和 1559nm 附近。 然后， 电调谐模块 120不再施加电压， 即电调谐模块 120停止向第一 微环 111的环形 PN结和第二微环 112的环形 PN结施加方向相反的偏置电 压，此时，双微环谐振器 110在改变后的谐振波长（即预期的新的谐振波长） 处处于谐振状态。 如图 3d所示， 电调谐模块 120停止施加电压后， 双微环 谐振器 110在波长 1543nm， 1551nm和 1559nm附近发生谐振。 这样， 通过 双微环谐振器谐振 -失谐 -谐振的状态变化， 可以实现无干扰波长选择。
应理解， 本发明实施例中的第一微环 111和第二微环 112可同时替换为 串联的偶数个微环的结构。 例如， 第一微环 111用 2个微环替换， 第二微环 112用 4个微环替换。 这些替换也应落入本发明的保护范围之内。
本发明实施例釆用环形 PN结实现微环的波导折射率调制， 这样， 通过 反向偏置电压将波导芯区的载流子抽出改变波导折射率的同时， 又不会产生 导通电流， 因而不会产生热量而破坏整个器件的 hitless的特性。 换言之， 反 向 PN结的调制方式， 可以使 hitless的特性保持住很长的时间。 另一方面， 通过热调谐改变谐振波长， 能够得到较大的波长可调范围。 因此， 本发明实 施例的波长选择开关在波长可调范围和调谐时间方面都有较优的性能。
本发明实施例的波长选择开关， 釆用硅基双微环谐振器， 可以与硅
CMOS工艺兼容， 而且体积小， 速度快； 通过电调谐模块和热调谐模块协同 对双微环谐振器进行电调谐和热调谐， 可以实现无干扰波长选择， 波长可调 范围大， 因此， 本发明实施例的波长选择开关适合高密度集成光互连。
上文中详细描述了本发明实施例的波长选择开关， 下面将描述本发明实 施例的由波长选择开关选择波长的方法。
图 4示出了本发明实施例的由波长选择开关选择波长的方法 400的示意 性流程图。 该波长选择开关为本发明实施例的波长选择开关 100。 如图 4所 示， 该方法 400包括：
S410, 电调谐模块向第一微环的环形 PN结和第二微环的环形 PN结施 加方向相反的偏置电压，使该第一微环和该第二微环的折射率发生相反的变 化， 以使双微环谐振器处于失谐状态；
S420, 热调谐模块调节该双微环谐振器的工作温度， 改变该双微环谐振 器的谐振波长；
S430, 该电调谐模块停止向该第一微环的环形 PN结和该第二微环的环 形 PN结施加方向相反的偏置电压， 以使该双微环谐振器在改变后的谐振波 长处处于谐振状态。
在本发明实施例中， 可选地， 在该热调谐模块包括温度探测器、 半导体 制冷器和控制芯片的情况下， 该热调谐模块调节该双微环谐振器的工作温 度， 包括：
该控制芯片根据该温度探测器探测的结果控制该半导体制冷器的工作 状态， 以调节该双微环谐振器的工作温度。
根据本发明实施例的选择波长的方法 400中的各个流程可分别由根据本 发明实施例的波长选择开关 100中的相应部件执行和实现， 为了简洁， 在此 不再赘述。
本发明实施例的选择波长的方法，通过电调谐模块和热调谐模块协同对 硅基双微环谐振器进行电调谐和热调谐， 可以实现无干扰波长选择。
应理解， 在本发明的各种实施例中， 上述各过程的序号的大小并不意味 着执行顺序的先后， 各过程的执行顺序应以其功能和内在逻辑确定， 而不应 对本发明实施例的实施过程构成任何限定。
本领域普通技术人员可以意识到， 结合本文中所公开的实施例描述的各 示例的单元及算法步骤， 能够以电子硬件、 计算机软件或者二者的结合来实 现， 为了清楚地说明硬件和软件的可互换性， 在上述说明中已经按照功能一 般性地描述了各示例的组成及步骤。这些功能究竟以硬件还是软件方式来执 行， 取决于技术方案的特定应用和设计约束条件。 专业技术人员可以对每个 特定的应用来使用不同方法来实现所描述的功能，但是这种实现不应认为超 出本发明的范围。
所属领域的技术人员可以清楚地了解到， 为了描述的方便和简洁， 上述 方法实施例中的相应过程，可以参考前述装置实施例描述的装置的具体工作 过程， 在此不再赘述。
在本申请所提供的几个实施例中， 应该理解到， 所揭露的系统、 装置和 方法， 可以通过其它的方式实现。 例如， 以上所描述的装置实施例仅仅是示 意性的， 例如， 所述单元的划分， 仅仅为一种逻辑功能划分， 实际实现时可 以有另外的划分方式， 例如多个单元或组件可以结合或者可以集成到另一个 系统， 或一些特征可以忽略， 或不执行。 另夕卜， 所显示或讨论的相互之间的 耦合或直接辆合或通信连接可以是通过一些接口、装置或单元的间接辆合或 通信连接， 也可以是电的， 机械的或其它的形式连接。 为单元显示的部件可以是或者也可以不是物理单元， 即可以位于一个地方， 或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或 者全部单元来实现本发明实施例方案的目的。
另外， 在本发明各个实施例中的各功能单元可以集成在一个处理单元 中， 也可以是各个单元单独物理存在， 也可以是两个或两个以上单元集成在 一个单元中。 上述集成的单元既可以釆用硬件的形式实现， 也可以釆用软件 功能单元的形式实现。
所述集成的单元如果以软件功能单元的形式实现并作为独立的产品销 售或使用时， 可以存储在一个计算机可读取存储介质中。 基于这样的理解， 本发明的技术方案本质上或者说对现有技术做出贡献的部分，或者该技术方 案的全部或部分可以以软件产品的形式体现出来， 该计算机软件产品存储在 一个存储介质中， 包括若干指令用以使得一台计算机设备（可以是个人计算 机， 服务器， 或者网络设备等）执行本发明各个实施例所述方法的全部或部 分步骤。 而前述的存储介质包括： U盘、 移动硬盘、 只读存储器 （ROM， Read-Only Memory ). 随机存取存储器（RAM, Random Access Memory )、 磁碟或者光盘等各种可以存储程序代码的介质。 以上所述， 仅为本发明的具体实施方式， 但本发明的保护范围并不局限 于此， 任何熟悉本技术领域的技术人员在本发明揭露的技术范围内， 可轻易 想到各种等效的修改或替换， 这些修改或替换都应涵盖在本发明的保护范围 之内。 因此， 本发明的保护范围应以权利要求的保护范围为准。

Claims

权利要求
1. 一种波长选择开关， 其特征在于， 包括：
双微环谐振器， 包括串联的第一微环和第二微环， 所述第一微环和所述 第二微环为硅基微环波导且各包含一个环形 PN结，所述第一微环的环形 PN 结和所述第二微环的环形 PN结的方向相同；
电调谐模块，所述电调谐模块的第一电端口与所述第一微环的 P区和所 述第二微环的 N区相连，所述电调谐模块的第二电端口与所述第一微环的 N 区和所述第二微环的 P区相连，所述电调谐模块用于向所述第一微环的环形 PN结和所述第二微环的环形 PN结施加方向相反的偏置电压；
热调谐模块， 用于调节所述双微环谐振器的工作温度。
2. 根据权利要求 1 所述的波长选择开关， 其特征在于， 所述电调谐模 块用于向所述第一微环的环形 PN结和所述第二微环的环形 PN结施加方向 相反的偏置电压， 使所述第一微环和所述第二微环的折射率发生相反的变 化， 以使所述双微环谐振器处于失谐状态；
所述热调谐模块用于调节所述双微环谐振器的工作温度， 改变所述双微 环谐振器的谐振波长；
所述电调谐模块还用于停止向所述第一微环的环形 PN结和所述第二微 环的环形 PN结施加方向相反的偏置电压， 以使所述双微环谐振器在改变后 的谐振波长处处于谐振状态。
3. 根据权利要求 1或 2所述的波长选择开关， 其特征在于， 所述第一 微环和所述第二微环为脊形波导。
4. 根据权利要求 1至 3中任一项所述的波长选择开关， 其特征在于， 所述热调谐模块包括：
温度探测器， 用于探测所述双微环谐振器的温度；
半导体制冷器， 用于改变所述双微环谐振器的温度；
控制芯片，用于根据所述温度探测器探测的结果控制所述半导体制冷器 的工作状态， 以调节所述双微环谐振器的工作温度。
5. 根据权利要求 1至 4中任一项所述的波长选择开关， 其特征在于， 所述第一微环和所述第二微环的靠近微环中心的部分为 P区，远离微环中心 的部分为 N区， 或者， 靠近微环中心的部分为 N区， 远离微环中心的部分 为 P区。
6. 根据权利要求 1至 5中任一项所述的波长选择开关， 其特征在于， 所述第一微环的 P区和所述第二微环的 P区包含 P++区， 所述第一微环的 N 区和所述第二微环的 N区包含 N++区。
7. 一种由波长选择开关选择波长的方法， 其特征在于， 所述波长选择 开关包括双微环谐振器， 电调谐模块和热调谐模块， 其中， 所述双微环谐振 器包括串联的第一微环和第二微环， 所述第一微环和所述第二微环为硅基微 环波导且各包含一个环形 PN结， 所述第一微环的环形 PN结和所述第二微 环的环形 PN结的方向相同， 所述电调谐模块的第一电端口与所述第一微环 的 P区和所述第二微环的 N区相连，所述电调谐模块的第二电端口与所述第 一微环的 N区和所述第二微环的 P区相连；
所述方法包括：
所述电调谐模块向所述第一微环的环形 PN 结和所述第二微环的环形 PN 结施加方向相反的偏置电压， 使所述第一微环和所述第二微环的折射率 发生相反的变化， 以使所述双微环谐振器处于失谐状态；
所述热调谐模块调节所述双微环谐振器的工作温度， 改变所述双微环谐 振器的谐振波长；
所述电调谐模块停止向所述第一微环的环形 PN结和所述第二微环的环 形 PN结施加方向相反的偏置电压， 以使所述双微环谐振器在改变后的谐振 波长处处于谐振状态。
8. 根据权利要求 7所述的方法， 其特征在于， 所述第一微环和所述第 二微环为脊形波导。
9. 根据权利要求 7或 8所述的方法， 其特征在于， 所述热调谐模块包 括温度探测器、 半导体制冷器和控制芯片；
所述热调谐模块调节所述双微环谐振器的工作温度， 包括：
所述控制芯片根据所述温度探测器探测的结果控制所述半导体制冷器 的工作状态， 以调节所述双微环谐振器的工作温度。
10. 根据权利要求 7至 9中任一项所述的方法， 其特征在于， 所述第一 微环和所述第二微环的靠近微环中心的部分为 P区，远离微环中心的部分为 N区， 或者， 靠近微环中心的部分为 N区， 远离微环中心的部分为 P区。
11. 根据权利要求 7至 10中任一项所述的方法， 其特征在于， 所述第 一微环的 P区和所述第二微环的 P区包含 P++区，所述第一微环的 N区和所 述第二微环的 N区包含 N++区
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