WO2016029811A1 - 电子源、x射线源、使用了该x射线源的设备 - Google Patents

电子源、x射线源、使用了该x射线源的设备 Download PDF

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Publication number
WO2016029811A1
WO2016029811A1 PCT/CN2015/087488 CN2015087488W WO2016029811A1 WO 2016029811 A1 WO2016029811 A1 WO 2016029811A1 CN 2015087488 W CN2015087488 W CN 2015087488W WO 2016029811 A1 WO2016029811 A1 WO 2016029811A1
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Prior art keywords
electron
source
ray source
ray
emission
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PCT/CN2015/087488
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English (en)
French (fr)
Inventor
唐华平
陈志强
李元景
王永刚
秦占峰
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Nuctech Co Ltd
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Nuctech Co Ltd
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Priority to EP15813227.4A priority Critical patent/EP3188213A4/en
Priority to CA2919744A priority patent/CA2919744C/en
Priority to RU2016102389A priority patent/RU2668268C2/ru
Priority to US14/904,061 priority patent/US10014148B2/en
Priority to JP2016544723A priority patent/JP6523301B2/ja
Priority to EP24195049.2A priority patent/EP4439620A3/en
Priority to KR1020167010573A priority patent/KR101810349B1/ko
Publication of WO2016029811A1 publication Critical patent/WO2016029811A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06—Cathodes
    • H01J35/065—Field emission, photo emission or secondary emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08—Anodes; Anti cathodes
    • H01J35/112—Non-rotating anodes
    • H01J35/116—Transmissive anodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/14—Arrangements for concentrating, focusing, or directing the cathode ray
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
    • H05G1/02—Constructional details
    • H05G1/04—Mounting the X-ray tube within a closed housing
    • H05G1/06—X-ray tube and at least part of the power supply apparatus being mounted within the same housing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
    • H05G1/08—Electrical details
    • H05G1/26—Measuring, controlling or protecting
    • H05G1/30—Controlling
    • H05G1/52—Target size or shape; Direction of electron beam, e.g. in tubes with one anode and more than one cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
    • H01J2203/02—Electron guns
    • H01J2203/0204—Electron guns using cold cathodes, e.g. field emission cathodes
    • H01J2203/0208—Control electrodes
    • H01J2203/0212—Gate electrodes
    • H01J2203/0216—Gate electrodes characterised by the form or structure
    • H01J2203/022—Shapes or dimensions of gate openings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
    • H01J2203/02—Electron guns
    • H01J2203/0204—Electron guns using cold cathodes, e.g. field emission cathodes
    • H01J2203/0208—Control electrodes
    • H01J2203/0212—Gate electrodes
    • H01J2203/0216—Gate electrodes characterised by the form or structure
    • H01J2203/0224—Arrangement of gate openings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
    • H01J2203/02—Electron guns
    • H01J2203/0204—Electron guns using cold cathodes, e.g. field emission cathodes
    • H01J2203/0208—Control electrodes
    • H01J2203/0212—Gate electrodes
    • H01J2203/0236—Relative position to the emitters, cathodes or substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/06—Cathode assembly
    • H01J2235/062—Cold cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/06—Cathode assembly
    • H01J2235/068—Multi-cathode assembly
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/14—Arrangements for concentrating, focusing, or directing the cathode ray
    • H01J35/147—Spot size control

Definitions

  • the present invention relates to an electron source for generating an electron beam stream and an X-ray source for generating X-rays using the electron source, and more particularly to an electron source for generating an electron beam stream from a predetermined position in a predetermined manner and X for generating X-rays from a different position in a predetermined manner.
  • a source of radiation and a device using the X-ray source are particularly preferred.
  • An electron source refers to a device or component capable of generating an electron beam stream, and is commonly referred to as an electron gun, a cathode, an emitter, etc., and the electron source is widely used in display devices, X-ray sources, microwave tubes, and the like.
  • the X-ray source refers to the device that generates X-rays.
  • the core is an X-ray tube. It consists of an electron source, an anode, and a vacuum-sealed casing. It usually includes auxiliary devices such as power supply and control system, cooling and shielding.
  • X-ray sources have a wide range of applications in industrial non-destructive testing, safety inspection, medical diagnosis and treatment.
  • the conventional X-ray source uses a direct-heating spiral tungsten wire as a cathode. When it is operated, it is heated to a working temperature of about 2000 K to generate a heat-emitting electron beam. The electron beam is flown by hundreds of thousands of volts between the anode and the cathode. The high-voltage electric field accelerates, flies toward the anode and strikes the target surface, producing X-rays.
  • Field emission allows a variety of materials, such as metal tips, carbon nanotubes, etc., to generate electron emission at room temperature to obtain electron beam current.
  • materials such as metal tips, carbon nanotubes, etc.
  • nanomaterial field emission electron sources have developed rapidly.
  • the X-ray source requires that the electron source used has a large emission current, and the emission current is usually greater than 1 mA.
  • the current source of the oil-cooled rotating target X-ray source in the medical CT has an emission current of up to 1300 mA.
  • a field-emitting electron source using nanomaterials In the cathode X-ray equipment, in order to achieve a large emission current, a nano-material is used to generate a cathode emission surface having a certain macroscopic size, and a mesh gate is arranged in a parallel relationship above the emission surface to control the field emission. .
  • This structure due to the influence of machining precision, grid shape variable, and mounting accuracy, the grid has a large distance from the cathode surface, so it is necessary to apply a high voltage to the gate, usually exceeding 1000V, to control the field emission. .
  • an electron-emitting unit employing the principle of field emission has a substantially similar structure, for example, as shown in FIG. 3 (A), FIG. 3 (B), and FIG. 3 (C).
  • A) of FIG. 3 is a technical solution disclosed in Patent Document 2, and the nano material 31 is attached to a certain structure 13 of the base layer 10.
  • B) of FIG. 3 is a technical solution disclosed in Patent Document 3, in which the nano material 20 is directly grown on the flat surface of the base layers 12, 14.
  • (C) of FIG. 3 is a technical solution disclosed in Patent Document 4, an electron source for an X-ray source device, a nano material plane 330 having a macroscopic size (mm to centimeter), and a gate layer of a macroscopic size grid.
  • the grid plane is parallel to the nanomaterial plane.
  • Patent Document 1 CN102870189B;
  • Patent Document 2 US5773921;
  • Patent Document 3 US5973444
  • Patent Document 4 CN100459019.
  • a field emission electron source having a novel structure which realizes the object of simple structure, low cost, low control voltage, and high intensity of emission current, and provides an X-ray source using the electron source.
  • the output X-ray intensity is large, the cost is low, or there are a plurality of X-ray targets at different positions, and the target point flow is strong and the pitch is small.
  • a field emission electron source having a low control voltage and a large emission current and an X-ray source using the electron source are provided.
  • the electron source of the present invention has a plurality of electron emission regions, each of which includes a plurality of micro electron emission units, and the microelectronics in the present invention
  • the structure of the transmitting unit is such that the control voltage of the field emission is very low, and a large number of micro electron emitting units work in coordination to make the electron emitting region have a large emission current.
  • An X-ray source using the electron source can be a dual-energy X-ray source through the design of the anode; a distributed X-ray source having a plurality of different positions can be obtained by designing the electron source; It can increase the X-ray output intensity of each target, reduce the spacing of target points, avoid black spots, expand the function and application of field emission distributed X-ray source, and reduce the control difficulty by reducing the control voltage. And production costs, reduce failures, and increase the life of distributed X-ray sources.
  • a distributed X-ray source having the above features in fluoroscopic imaging and backscatter imaging, and various technical solutions exhibit low cost and high use of the X-ray source. Check one or more of the speed, high image quality.
  • an image real-time guided radiation therapy system for treating a site having physiological motion, such as a lung, a heart, etc., "real-time" image-guided radiation therapy can reduce the dose of radiation and reduce the dose. Irradiation of normal organs is of great significance.
  • the distributed X-ray source of the present invention has a plurality of targets, which obtain a guided image different from a normal planar image, and is a "stereoscopic" diagnostic image with depth information, which can further improve image-guided therapy for therapeutic beam The location guides the accuracy.
  • An aspect of the invention provides an electron source having at least one electron emission region, the electron emission region comprising a plurality of micro electron emission units, the micro electron emission unit including a base layer, located on the base layer An insulating layer, a gate layer on the insulating layer, an opening on the gate layer, and an electron emitter fixed on the base layer and corresponding to the opening position, wherein the electron Each of the micro-electron emission units in the emission region simultaneously emits electrons or simultaneously does not emit electrons.
  • the base layer is used to provide structural support as well as electrical connection.
  • the gate layer is composed of a conductive material.
  • the opening penetrates through the gate layer and the insulating layer and reaches the base layer.
  • the insulating layer has a thickness of less than 200 ⁇ m.
  • the size of the opening is smaller than the thickness of the insulating layer.
  • the size of the opening is smaller than the distance from the electron emitter to the gate layer.
  • the height of the electron emitter is less than one-half of the thickness of the insulating layer.
  • the gate layer is parallel to the base layer.
  • the space occupied by the micro-electron emission unit in the array arrangement direction is on the order of micrometers, and preferably, the space occupied by the micro-electron emission unit in the array arrangement direction ranges from 1 ⁇ m to 200 ⁇ m.
  • the ratio of the length to the width of the electron-emitting region is more than 2.
  • the base layer is composed of a base layer and a conductive layer on the base layer, and the electron emitter is fixed on the conductive layer.
  • the electron-emitting region has an emission current of not less than 0.8 mA.
  • an aspect of the invention provides an electron source having at least two electron emission regions, each of the electron emission regions including a plurality of micro electron emission units, the micro electron emission unit including for providing structural support and electricity a connected base layer, an insulating layer on the base layer, a gate layer on the insulating layer and composed of a conductive material, penetrating the gate layer and the insulating layer, and reaching the base An opening of the layer, and an electron emitter located in the opening and fixed to the base layer, wherein each of the micro-electron emitting units in the same electron-emitting region is electrically connected while emitting electrons Or, at the same time, no electrons are emitted, and different electron-emitting regions are electrically isolated.
  • the insulating layer has a thickness of less than 200 ⁇ m.
  • the gate layer is parallel to the base layer.
  • electrically isolating between the different electron-emitting regions means that the base layers of each of the electron-emitting regions are separated from each other or the respective electron-emitting regions are The gate layers are separated from each other, or the base layer and the gate layer of each of the electron-emitting regions are each separately and independently.
  • different electron-emitting regions may be controlled to perform electron emission in a predetermined order, including sequential, interval, alternating, partial simultaneous, and group combination.
  • the base layers of the respective micro-electron emission units of the same electron-emitting region are the same physical layer, and the gate layers of each of the micro-electron emission units are the same physical layer.
  • the insulating layer of each of the micro electron-emitting units may also be the same physical layer.
  • the microelectron emission unit has a size in the order of micrometers in the array arrangement direction in the electron emission region.
  • the space occupied by the micro-electron emission unit in the array arrangement direction ranges from 1 ⁇ m to 200 ⁇ m.
  • the size of the opening is smaller than the thickness of the insulating layer.
  • the size of the opening is smaller than the distance from the electron emitter to the gate layer.
  • the height of the electron emitter is less than one-half of the thickness of the insulating layer.
  • the linear length of the electron emitter is perpendicular to the surface of the base layer.
  • the electron emitter is composed of a nano material.
  • the nanomaterial is a single-walled carbon nanotube, a double-walled carbon nanotube, a multi-walled carbon nanotube, or a combination thereof.
  • the base layer is composed of a base layer for providing structural support and a conductive layer for causing the same electron-emitting region
  • the base of each of the micro electron-emitting units (the fixed pole of the nanomaterial) forms an electrical connection.
  • the ratio of the length to the width of the electron-emitting region is more than 2.
  • each of the electron-emitting regions is equal in size and arranged in parallel, neat, and evenly along the narrow sides.
  • the emission current of each of the electron-emitting regions is greater than 0.8 mA.
  • an aspect of the present invention provides an X-ray source comprising: a vacuum box; an electron source disposed in the vacuum box; and an anode disposed in the vacuum box opposite to the electron source; An electron source control device for applying a voltage between the base layer and the gate layer of the electron emission region of the electron source; and a high voltage power source connected to the anode for supplying a high voltage to the anode,
  • the method is characterized in that the electron source has at least one electron emission region, and the electron emission region comprises a plurality of micro electron emission units, and each of the micro electron emission units occupies a space size of micrometers in the array arrangement direction.
  • the microelectronic emission unit includes a base layer for providing structural support and electrical connection, an insulating layer on the base layer, a gate layer on the insulating layer and composed of a conductive material, and a through-hole An opening of the gate layer and the insulating layer and reaching the base layer, and an electron emitter located in the opening and fixed to the base layer, wherein Each of the micro-electron emission units in the electron-emitting region simultaneously emits electrons or simultaneously does not emit electrons.
  • the insulating layer has a thickness of less than 200 ⁇ m.
  • the electron source control device applies a field emission control voltage to the electron source of less than 500V.
  • an aspect of the present invention provides a distributed X-ray source comprising: a vacuum box; an electron source disposed in the vacuum box; an anode disposed in the vacuum box opposite to the electron source; An electron source control device for applying a voltage between the base layer and the gate layer of the electron emission region of the electron source; and a high voltage power source for supplying a high voltage to the anode
  • said electron source comprises at least two (referred to as N) electron-emitting regions, each of said electron-emitting regions comprising a plurality of micro-electron-emitting units, said micro-electron-emitting unit comprising a base layer, located An insulating layer on the base layer, a gate layer on the insulating layer, an opening on the gate layer, and a substrate fixed on the base layer
  • An electron emitter corresponding to an opening position, wherein each of the micro-electron emitting units in the same electron-emitting region is electrically connected while emitting electrons or not simultaneously emitting electrons
  • the base layers are electrically isolated, and each of the base layers is connected to an electron source control device through independent leads. .
  • the gate layers are electrically isolated, and each of the gate layers is connected to an electron source control device through independent leads. .
  • the surface of the anode is opposed to the surface of the electron source, has a similar shape and size, and maintains a parallel or substantially parallel relationship, resulting in at least two differently located targets.
  • the anode contains at least two different target materials, and X-rays having different integrated energies are generated at different target points.
  • the N electron-emitting regions have an elongated shape and are linearly arranged in the same plane along the direction of the narrow sides.
  • each of the N electron-emitting regions independently emits electrons, and X-rays respectively generated at the N positions corresponding to the electron-emitting regions on the anode generate N target points.
  • N of the electron-emitting regions are subjected to electron emission in groups by a combination of n adjacent ones, and X-rays may be respectively generated at corresponding N/n positions on the anode. , forming N/n targets.
  • N of the electron-emitting regions are subjected to electron emission in groups by a combination of a plurality of adjacent n, and X-rays are respectively generated at corresponding positions on the anode to form X-rays.
  • Targets are respectively generated at corresponding positions on the anode to form X-rays.
  • the surface of the electron-emitting region is curved in the width direction, and electrons emitted from each of the micro-electron emission units in the electron-emitting region are respectively focused toward one point.
  • the distributed X-ray source further includes a focusing device that corresponds to the electron emission region and has the same number and is disposed between the electron source and the anode.
  • the distributed X-ray source further includes a collimating device disposed in the vacuum box or outside the vacuum box, the collimating device being disposed on an output path of the X-ray for Output X-rays in the form of cones, plane sectors, pens, or multiple points of parallel.
  • the arrangement shape of the target of the distributed X-ray source is circular or curved.
  • the arrangement shape of the target points of the distributed X-ray source is a square, a broken line segment or a straight line adjacent to each other.
  • the anode target is a transmission target, and the output X-rays are in the same direction as the electron beam flow from the electron source.
  • the anode target is a reflective target
  • the output X-rays are at an angle of 90 degrees with the electron beam from the electron source.
  • an aspect of the present invention provides a perspective formation using the X-ray source of the present invention.
  • An image system comprising: at least one X-ray source of the present invention for generating X-rays covering the detection area; at least one detector located on the other side of the detection area different from the X-ray source for receiving And a transmitting device between the X-ray source and the detector for carrying the detected object and passing the detected object through the detection area.
  • an aspect of the present invention provides a backscatter imaging system using the distributed X-ray source of the present invention, comprising: at least one distributed X-ray source of the present invention for generating a plurality of pencil X-ray beams, covering a detection area; at least one detector located on the same side of the detection area as the X-ray source for receiving X-rays reflected from the object to be detected.
  • the backscatter imaging system of the present invention there is a combination of at least two sets of the X-ray source and the detector, the at least two sets being combined on different sides of the object to be detected.
  • a transfer device for carrying the subject to be detected and passing the subject to pass through the detection region.
  • a moving device for moving the X-ray source and the detector to pass the X-ray source and the detector through an area where the object to be detected is located .
  • an aspect of the present invention provides an X-ray detecting system comprising: at least two distributed X-ray sources of the present invention; at least two sets of detectors corresponding to the X-ray sources; and an image integrated processing system.
  • at least one of the distributed X-ray source and the detector performs fluoroscopic imaging on the detected object
  • at least one of the distributed X-ray source and the detector performs backscatter imaging on the detected object
  • the image is integrated
  • the system performs comprehensive processing on the fluoroscopic image and the backscattered image to obtain more characteristic information of the detected object.
  • an aspect of the present invention provides a real-time image-guided radiation therapy apparatus comprising: a radiation therapy radiation source for generating a radiation beam for performing radiation therapy on a patient; and multi-leaf collimation And for adjusting a shape of the radiation therapy beam to match the lesion; moving the bed for moving and positioning the patient to align the position of the radiation therapy beam with the lesion; at least one diagnostic source, the diagnostic source Is a distributed X-ray source of the present invention for generating a beam of rays for diagnostic imaging of a patient; a flat panel detector for receiving a beam of diagnostic imaging; a control system for forming a beam according to the beam received by the plate detector Diagnosing the image, locating the location of the lesion in the diagnostic image, directing the center of the beam of radiation therapy to align with the center of the lesion, and directing the shape of the treatment beam of the multi-leaf collimator to match the shape of the lesion.
  • the diagnostic ray source is a distributed X-ray source having a circular or square shape and outputting X-rays on the side, the axis or center line of the distributed X-ray source being the same as the beam axis of the radiation therapy ray source
  • the line ie the location of the diagnostic ray source and the radiation therapy ray source, is in the same direction as the patient.
  • an electron source having a low control voltage and a high emission current intensity
  • an X-ray source using the electron source
  • an imaging system using the X-ray source using the X-ray source
  • an X-ray detection system and a real-time image-guided radiation therapy apparatus.
  • FIG. 1 is a schematic view showing the structure of an electron source according to an embodiment of the present invention.
  • FIG. 2 is a schematic view showing the structure of a micro electron emission unit according to an embodiment of the present invention.
  • FIG. 3 are schematic views showing several configurations of a conventional field emission device.
  • FIG. 4 is a view schematically showing a front end surface cross-sectional view of an electron source according to an embodiment of the present invention.
  • FIG. 5 are diagrams showing several different ways in the embodiment of the present invention. Schematic diagram of the electron source separated by row regions.
  • FIG. 6 is a schematic view showing a specific configuration of a micro electron emission unit according to an embodiment of the present invention.
  • FIG. 7 are schematic views showing a micro electron-emitting unit in which nanomaterials are fixed in different manners.
  • FIG. 8 is a schematic view showing the configuration of an X-ray source using an electron source according to an embodiment of the present invention.
  • FIG. 9 is a schematic view showing a distributed X-ray source having a plurality of target materials for an anode according to an embodiment of the present invention.
  • FIG. 10 is a schematic diagram showing three operation modes of the distributed X-ray source according to the embodiment of the present invention.
  • FIG. 11 is a schematic view showing a distributed X-ray source having a specific structure of an electron source according to an embodiment of the present invention.
  • FIG. 12 is a schematic view showing a distributed X-ray source with a focusing device according to an embodiment of the present invention.
  • FIG. 13 are schematic views showing several collimating effects of the distributed X-ray source according to the embodiment of the present invention.
  • FIG. 14 is a schematic view showing a ring-shaped distributed X-ray source according to an embodiment of the present invention.
  • Fig. 15 is a schematic diagram showing a block type distributed X-ray source according to an embodiment of the present invention.
  • FIG. 16 are schematic views showing several cross-sectional structures of a distributed X-ray source according to an embodiment of the present invention.
  • 17 is a schematic view showing a transmission imaging system using a distributed X-ray source according to an embodiment of the present invention.
  • FIG. 18 is a schematic view showing a backscatter imaging system using a distributed X-ray source according to an embodiment of the present invention.
  • FIG. 1 is a schematic illustration of a structure of an electron source of the present invention.
  • the electron source 1 of the present invention includes a plurality of electron-emitting regions such as an electron-emitting region 11 and an electron-emitting region 12, and although not shown, the electron source 1 may include only one electron-emitting region.
  • each of the electron emission regions includes a plurality of microelectronic emission units 100.
  • micro-electron emission units 100 in the same electron-emitting region are physically connected (electrically connected), and there are physical separations between the different electron-emitting regions (that is, different electron-emitting regions are electrically isolated).
  • the plurality of electron-emitting regions 11, 12, ... are arranged in a row along the width direction of the electron-emitting region (shown as the left-right direction in FIG. 1), but the present invention is not limited thereto.
  • the electron emission region may be other arrangements, for example, arranged in a plurality of rows, or arranged in a plurality of rows and the electron emission regions of each row are arranged in a staggered manner with each other, and further, the size, shape, and electron emission region of the electron emission region The distance between them can be set as needed.
  • FIG. 2 is a schematic block diagram showing a micro electron emission unit 100 according to an embodiment of the present invention.
  • the micro electron emission unit 100 includes a base layer 101, an insulating layer 102 on the base layer 101, a gate layer 103 on the insulating layer 102, a through gate layer 103 and an insulating layer 102, and arrives.
  • the opening 105 of the base layer 101 and the electron emitter 104 located in the opening 105 and fixed to the base layer 101.
  • the base layer 101 is the structural basis of the micro-electron emitting unit 100, providing structural support while providing electrical connection (electrical connection);
  • the insulating layer 102 is above the base layer 101 and is made of an insulating material to make the gate layer 103 Insulation with the base layer 101, and at the same time, due to the supporting action of the insulating layer 102, the distance between the gate layer and the base layer is made equal in the same electron emission region as a whole (ie, both are located)
  • the planes are parallel, so that the electric field distribution between the gate layer 103 and the base layer 101 is uniform;
  • the gate layer 103 is on the insulating layer 102 and is made of a metal conductive material;
  • the opening 105 penetrates the gate layer 103 and the insulating layer 102;
  • an electron emitter 104 is located in the opening 105 and is connected to the base layer 101.
  • the opening 105 may be any shape that is circular, square, polygonal, elliptical, etc., preferably circular; the size (size) of the opening 105 in the gate layer 103 may be the same as the size in the insulating layer 102. Alternatively, for example, as shown in FIG. 2, the opening in the insulating layer 102 is slightly larger than the opening in the gate layer 103.
  • the electron emitter 104 is located in the opening 105 and is connected to the base layer 101. Preferably, the electron emitter 104 is located at the center of the opening, and the linear length direction of the electron emitter 104 is perpendicular to the surface of the base layer 101.
  • a voltage difference ie, a field emission voltage
  • an electric field is generated between the gate layer 103 and the base layer 101, when the electric field intensity reaches a certain level.
  • the electron emitter 104 generates field emission, and the emitted electron beam stream E passes through the insulating layer 102 and the gate layer 103, and is emitted from the opening 105.
  • the electron emitter 104 is a structure containing "nanomaterials", which means materials having at least one dimension in a three-dimensional space in the nanometer scale range (1 to 100 nm) or composed of them as basic units, including metals and non-metals.
  • Patent Documents 2 to 4 that the electron-emitting units typified by (A) and (B) of Fig. 3 are generally arranged in a plane array, and are also vertically and horizontally (also called For each of the strip base and gate layers (or complex multi-layer gate layers) arranged for the warp and weft, each emitter unit is individually controlled, and each emitter unit has a small emission current and is not used in the application. Considering the structural proportion of each component, the quality of the emission current is poor. As shown in Fig.
  • the size of the opening on the gate is much larger than the distance from the nanomaterial to the gate, resulting in the nanomaterial in the edge portion experiencing a large electric field, and the nanomaterial at the edge portion is firstly current-emitted, but emitted.
  • the current diverges at a large angle to the edge, the forwardness is poor, and is easily absorbed by the gate block, while the nanomaterial in the middle can originally produce a better forward emission current, but because the perceived electric field is small, the emission current is small or basic. Do not launch.
  • the electron emission unit explicitly used for the X-ray source represented by FIG. 3(C) is a parallel plane structure with a large span and a small pitch between the grid plane and the nanomaterial plane, due to machining precision and mounting precision.
  • the electron emission unit has a high field emission emission control voltage due to a large distance between the grid plane and the nano material plane, thereby increasing control difficulty and production cost.
  • the specific structure and ratio of each component of the micro electron emission unit 100 are adopted. And the electron-emitting region obtains better electron emission characteristics and a larger electron emission current E while reducing the control voltage V required for field emission.
  • FIG. 4 is a schematic view showing a cross-sectional front view of the electron source 1 according to the embodiment of the present invention.
  • the micro-electron emitting units 100 in the same electron-emitting region are physically connected (electrically connected), for example, the base layer 101 of each micro-electron emitting unit 100 is the same physical layer.
  • the gate layer 103 of each micro electron emission unit 100 is the same physical layer, and the insulating layer 102 of each micro electron emission unit 100 may be the same material.
  • the management layer The "same physical layer” means that they are at the same level in space, connected in electrical characteristics, and connected in structure.
  • the insulating layer 102 of each of the micro-electron emitting units 100 may be composed of a plurality of insulating pillars, insulating blocks, insulating strips, and the like on the same spatial level, as long as the insulating between the gate layer 103 and the base layer 101 can be achieved and each The distances are equal (that is, the gate layer 103 is parallel to the base layer 101).
  • there are physical separations between different electron-emitting regions for example, specifically, the gate layers 103 of the respective electron-emitting regions are separated and independent, or the base layers 101 of the respective electron-emitting regions are separated and independent. Or the gate layer 103 and the base layer 101 of each electron-emitting region are separated and independent.
  • all the micro-electron emitting units in the same electron-emitting region simultaneously emit electrons or not emit electrons at the same time, and different electron-emitting regions can perform electron-emitting in a predetermined independent control sequence or a combined control sequence by control.
  • the simultaneous operation of the plurality of microelectronic emission units 100 can cause the emission current of one electron emission region to be greater than 0.8 mA.
  • FIG. 5 are schematic views showing several electron sources that are divided in regions in different manners in the embodiment of the present invention.
  • physical separation between different electron-emitting regions can be embodied in various specific embodiments.
  • (A) of FIG. 5 shows that the electron-emitting region 11 and the electron-emitting region 12 have a common base layer and an insulating layer, but the gate layers are separated with a pitch d;
  • (B) of FIG. The electron-emitting region 11 and the electron-emitting region 12 have a common gate layer and an insulating layer, but the base layer is separated with a pitch d;
  • (C) of FIG. 5 shows the gates of the emission region 11 and the emission region 12.
  • the layer, the insulating layer and the base layer are all separated, with a spacing d.
  • each electron-emitting region may be square, circular, elongated, oblong, polygonal, and other combined shapes; wherein the square refers to a square or a rectangle, and the long strip refers to a ratio of length to width that is much larger than 1 (for example, 10); the shape of each electron-emitting region of an electron source may be the same or different; the size of each electron-emitting region may be equal or unequal; the electron-emitting region has a macroscopic size of a millimeter-scale. For example, 0.2 mm to 40 mm.
  • the separation distance d between the electron emission regions may be on the order of micrometers or on the order of macrometers to millimeters, and the separation pitch d between different electron emission regions may be the same. Different.
  • each of the electron-emitting regions is elongated, having a size of 1 mm ⁇ 20 mm, of equal size, arranged in parallel, neatly and evenly along a narrow side (1 mm), and a spacing d of each adjacent electron-emitting region is 1 mm.
  • FIG. 6 is a schematic view showing a specific configuration of a micro electron emission unit according to an embodiment of the present invention.
  • the base layer 101 provides structural support while providing electrical communication, which may be a metal layer or a base layer 106 and a conductive layer 107.
  • the base layer 106 is used to provide structural support, for example, to provide a smooth surface for facilitating adhesion of the conductive layer, and is a structural basis of the electron-emitting region, that is, the conductive layer 107, the insulating layer 102, the gate layer 103, the electron emitter 104, and the like are all based on
  • the bottom layer 106 is attached, bonded, grown or fixed on a foundation.
  • the base layer 106 may be a metal material such as stainless steel or a non-metal material such as ceramics or the like.
  • the conductive layer 107 is used to provide a base electrical connection to each of the micro-electron emission units 100 in the same electron-emitting region.
  • the conductive layer 107 is made of a material having good electrical conductivity, and may be a metal or a non-metal such as gold, silver or copper. , molybdenum, carbon nanofilm, etc.
  • the size S of the micro-electron emission unit 100 in the array arrangement direction in the electron emission region is on the order of micrometers, that is, the space size occupied by each of the micro-electron emission units 100 in the array arrangement direction ranges from 1 ⁇ m to 200 ⁇ m. Typically such as 50 ⁇ m.
  • the direction perpendicular to the array arrangement plane is defined as depth, or thickness.
  • the thickness of the base layer 106 is a macroscopic millimeter scale, for example, 1 mm to 10 mm, typically 4 mm, and the base layer 106 in Fig. 6 only embodies a portion in the thickness direction.
  • the thickness of the conductive layer 107 may be on the order of millimeters or micrometers, and has a certain relationship with the materials used. For the convenience of processing and cost reduction, it is recommended to be a micron-scale, for example, 20 ⁇ m thick carbon nanofilm.
  • the thickness of the insulating layer 102 is on the order of micrometers, for example, 5 ⁇ m to 400 ⁇ m, typically 100 ⁇ m.
  • the thickness of the gate layer 103 is on the order of micrometers, and is preferably a thickness close to but slightly smaller than the insulating layer 102, for example, 5 ⁇ m to 400 ⁇ m, typically 30 ⁇ m.
  • the size D of the opening 105 is on the order of micrometers, and the size of the opening 105 is smaller than the thickness of the insulating layer 102, for example, 5 ⁇ m to 100 ⁇ m, typically 30 ⁇ m.
  • the height h of the electron emitter 104 is on the order of micrometers, which is less than 1/2 of the thickness of the insulating layer 102, for example, 1 ⁇ m to 100 ⁇ m, typically as 20 ⁇ m.
  • the distance H between the electron emitter 104 and the gate layer 103 is on the order of micrometers, which is smaller than the thickness of the insulating layer 102, and further clearly less than 200 ⁇ m, typically For example 80 ⁇ m.
  • the size S of the micro-electron emission unit 100 is on the order of micrometers, and the dimension D of the opening 105 is on the order of micrometers, so that the interior of the opening 105 can be arranged with a large number of single-walled or double-walled carbon nanotubes having a diameter of less than 10 nanometers, multi-walled carbon nanotubes, or Their combination ensures a certain current emission capability; the size of the opening 105 is smaller than the thickness of the insulating layer 102, that is, the shape of the opening 105 is a "deep well" shape, and the electric field distribution at the top of the electron emitter 104 is relatively uniform.
  • the current emitted by the electron emitter 104 is guaranteed to have a good forward characteristic; the thickness of the gate layer 103 is close to but smaller than the thickness of the insulating layer 102, on the one hand, the electric field at the top of the electron emitter 104 is relatively uniform, and on the other hand, it is not correct.
  • the electron beam current E emitted by the electron emitter 104 forms a significant block.
  • each of the above portions improves the quality of the electron beam current E emitted by the micro-electron emission unit 100, improves the intensity of the emission current, enhances the forward characteristics, and, in addition, adjusts the control voltage so that each micro-electron emission Unit 100 has an emission capability greater than 100 nA, such as 100 nA to 25 ⁇ A.
  • the distance between the electron emitter 104 and the gate layer 103 is H ⁇ 200 ⁇ m, so that the control voltage of the gate is less than 500 V (this is because if the voltage between the gate layer and the electron emitter and the gate layer and the electron emitter) The ratio of the distance between them exceeds 2V/ ⁇ m, and the electron emitter generates field emission.
  • the nanomaterial tip of the electron emitter has a strong field strength enhancement effect, that is, the electric field felt by the tip of the nano material can be large.
  • V/H V is the gate control voltage
  • H the distance between the gate layer and the electron emitter
  • typically H 80 ⁇ m
  • the control voltage V 300 V, which makes the electron source control of the present invention simple, The control cost is low.
  • the size S of the microelectronic emission unit 100 is expressed in the order of micrometers. According to the above-mentioned recommended typical size parameter, the size S of the microelectronic emission unit 100 is 50 ⁇ m, and an electron emission area having a size of 1 mm ⁇ 20 mm has 8000 micrometers.
  • the electron emission unit 100 has a emission capability of 100 nA to 25 ⁇ A per electron emission unit 100, and an electron emission region The current carrying capability is greater than 0.8 mA, such as 0.8 mA to 200 mA.
  • the electron emitter 104 may be directly fixed on the conductive layer by means of growth, printing, bonding, sintering, or the like, or may be fixed on certain conductive structures of a specific design on the conductive layer, for example, as shown in FIG. 7(A).
  • FIG. 7(A) is a schematic view showing the structure of a nano material fixed on a tapered boss. The boss may also be square, cylindrical or the like, which is a relatively common structure in the prior art;
  • (B) of Fig. 7 is A micro metal rod (or metal tip) is arranged on the conductive layer, and the nano material is fixed on the metal rod to form a tree structure of the nano material;
  • (C) of FIG. 7 is a conductive layer itself made of nano material.
  • the film is a structure in which a part of the nanomaterial in the nano film at the opening position is erected by subsequent treatment.
  • FIG. 8 is a schematic view showing the configuration of an X-ray source using an electron source according to an embodiment of the present invention.
  • the X-ray source shown in Figure 8 comprises: an electron source 1; an anode 2 disposed opposite the electron source 1; a vacuum box 3 surrounding the electron source 1 and the anode 2; an electron source control device 4 connected to the electron source 1; a high-voltage power source 5 connected to the anode 2; a first connecting device 41 that passes through the wall of the vacuum box 3 and connects the electron source 1 and the electron source control device 4; passes through the wall of the vacuum box 3 and connects the anode 2 and the high-voltage power source 5
  • the second connecting device 51 is a schematic view showing the configuration of an X-ray source using an electron source according to an embodiment of the present invention.
  • the X-ray source shown in Figure 8 comprises: an electron source 1; an anode 2 disposed opposite the electron source 1; a vacuum box 3 surrounding the electron source 1 and the anode 2; an electron source
  • the electron source 1 includes at least one electron emission region, and the electron emission region includes a plurality of micro electron emission units 100, and each of the micro electron emission units 100 occupies a space size in the array arrangement direction in a micrometer range.
  • the micro-electron emission unit 100 includes a base layer 101, an insulating layer 102 on the base layer 101, a gate layer 103 on the insulating layer 103, an opening through the gate layer 102 and the insulating layer 102, and reaching the base layer 101. 105, and an electron emitter 104 located in the opening 105 and fixed to the base layer 101, the plurality of microelectronic emission units 100 simultaneously emit electrons or simultaneously emit no electrons.
  • the operating state of the electron-emitting region is controlled by the electron source control device 4 connected to the electron source 1.
  • the electron source control device 4 applies two different voltages through the first connection device 41 to the base layer 101 and the gate layer 103 of the electron emission region of the electron source 1, at the base layer 101 and the gate A field emission electric field having a voltage difference of V is established between the pole layers 103, and the electric field intensity is V/H (H is the distance between the electron emitter 104 and the gate layer 103), and the voltage ratio base of the gate layer 103 is defined.
  • V/H the distance between the electron emitter 104 and the gate layer 103
  • the nanomaterial of the electron emitter 104 is carbon nanotube, and the intensity V/H is greater than 2V/ ⁇ m (the actual electric field experienced by the nano material may be large due to the field strength enhancement effect of the tip of the nano material.
  • the electron emission region generates electron emission.
  • the voltage of the electric field is zero or negative, electron emission regions do not generate electron emission.
  • the voltage V is higher and the intensity V/H is larger, the current intensity of the electron emission is larger, and therefore, the magnitude of the current intensity emitted by the electron source 1 can be adjusted by adjusting the output voltage V of the electron source control device 4.
  • the electron source control device 4 can output a voltage with an adjustable voltage range of 0V to 500V.
  • the electron source 1 When the output voltage is 0V, the electron source 1 does not emit electrons; when the output voltage reaches a certain amplitude, for example, 200V, the electron source 1 starts. When electrons are emitted, when the output voltage is increased by a certain amplitude, for example, when 300 V is reached, the current intensity of electrons emitted from the electron source 1 reaches a target value. If the intensity of the current emitted by the electron source 1 is lower or higher than the target value, by increasing or decreasing the output voltage of the electron source control device 4, the current intensity emitted by the electron source 1 is returned to the target value, which is easily realized by modern control systems. Automatic feedback adjustment.
  • the base layer 101 of the electron emission region of the electron source 1 is connected to the ground potential, a positive voltage is applied to the gate layer 103; or the gate layer 103 is connected to the ground potential, and the base layer 101 is applied. Negative voltage.
  • the anode 2 serves to establish a high-voltage electric field between itself and the electron source 1, while receiving an electron beam stream E emitted from the electron source 1 and accelerated by the high-voltage electric field to generate X-rays.
  • the anode 2 is also commonly referred to as a target, and its material is usually a high-Z metal material called a target material. It is widely used as tungsten, molybdenum, palladium, gold, copper, etc., and may be a metal or an alloy. The cost is reduced, usually by using a common metal as a substrate, on which one or more high Z target materials are fixed by electroplating, sputtering, high temperature crimping, soldering, bonding, or the like.
  • the anode 2 is connected to the anode high voltage power source 5 via a second connection device 51.
  • the high voltage power source 5 generates a high voltage (for example, 40 kV to 500 kV) of several tens of kV to several hundred kV to be applied between the anode 2 and the electron source 1, and the anode 2 has a positive voltage with respect to the electron source 1, for example, a typical method is electron
  • the body of the source 1 is connected to the ground potential, and the anode 2 is applied with a high voltage of 160 kV by the high voltage power source 5.
  • a high-voltage electric field is formed between the anode 2 and the electron source 1, and the electron beam E emitted from the electron source 1 is accelerated by the high-voltage electric field, moves in the direction of the electric field (reverse power line), and finally bombards the target material of the anode 2 to generate X-rays.
  • the vacuum box 3 is a peripherally sealed cavity housing surrounding the electron source 1 and the anode 2, which is mainly an insulating material such as glass or ceramic.
  • the housing of the vacuum box 3 may also be a metal material, such as stainless steel.
  • the housing of the vacuum box 3 is kept at a sufficient distance from the internal electron source 1 and the anode 2, The aspect does not cause discharge sparking between the electron source 1 or the anode 2, and does not affect the electric field distribution between the electron source 1 and the anode 2.
  • a first connecting means 41 is also mounted on the wall of the vacuum box 3 for allowing the electrically connected leads to pass through the wall of the vacuum box 3 and to maintain the sealing characteristics of the vacuum box 3, typically lead terminals made of ceramic material.
  • a second connecting means 51 is also mounted on the wall of the vacuum box 3 for allowing the electrically connected leads to pass through the wall of the vacuum box 3 and to maintain the sealing characteristics of the vacuum box, typically a high voltage lead terminal made of ceramic material.
  • the inside of the vacuum box 3 is a high vacuum, and the high vacuum in the vacuum box 3 is obtained by baking the exhaust gas in a high temperature exhaust furnace, the degree of vacuum is usually not less than 10 -3 pa, and the recommended degree of vacuum is not less than 10 -5 Pa, the vacuum box 3 itself may also have a vacuum holding device such as an ion pump.
  • the electron source 1 includes at least two electron-emitting regions, for example, N, each of which includes a plurality of micro-electron emission units 100.
  • the micro-electron emission unit 100 includes a base layer 101 at a base layer.
  • the emitters 104 are physically connected between the micro-electron emission units 100 in the same electron-emitting region, and have physical separation between the different electron-emitting regions.
  • the physical connection between the micro-electron emission units 100 in the same electron-emitting region means that the base layer 101 is the same layer, the gate layer 103 is the same layer, and the insulating layer 102 may be the same layer.
  • There are physical separations between different electron emission regions which can be: (A) The base layer 101 and the insulating layer 102 of different electron emission regions are the same layer, and the gate layers 103 are located on the same plane, but are separated, for example, the gate layer 103 of the adjacent electron emission regions has a pitch d.
  • the base layer 101 of the electron source 1 has a common lead connected to the electron source control device 4 through the first connecting means 41, and the gate layer 103 of each electron-emitting region has an independent lead through A connection device 41 is connected to the electron source control device 4.
  • the first connection device 41 has at least N+1 independent leads.
  • the base layer 101 of the electron source 1 is connected to the ground potential of the electron source control device 4 through a common lead, and the multiple outputs (all output positive voltages) of the electron source control device 4 are respectively connected to each through the first connection device 41 A gate layer 103 of an electron-emitting region, thereby achieving independent control of each electron-emitting region.
  • the gate layer 103 and the insulating layer 102 of different electron emission regions are the same layer, and the base layer 101 is located on the same plane, but is separated, for example, the base layer 101 of the adjacent electron emission region has a pitch d
  • the separation of the pole layers 101 may be only the separation of the conductive layers 107.
  • the gate layer 103 of the electron source 1 has a common lead connected to the electron source control device 4 through the first connecting means 41, and the base layer 101 of each electron-emitting region has an independent lead through A connection device 41 is connected to the electron source control device 4.
  • the first connection device 41 has at least N+1 independent leads.
  • the gate layer 103 of the electron source 1 is connected to the ground potential of the electron source control device 4 through a common lead, and the multiple outputs (all output negative voltages) of the electron source control device 4 are respectively connected to each through the first connection device 41 A base layer 101 of an electron-emitting region, thereby achieving independent control of each electron-emitting region.
  • the different electron emission regions are located in the same plane, but the gate layer 103, the insulating layer 102, and the base layer 101 are all separated, for example, the adjacent electron emission regions have a pitch d.
  • each of the electron-emitting regions leads a lead wire from each of the base layer 101 and the gate layer 103, and is connected to the electron source control device 4 through the first connecting device 41, for the N electron-emitting regions, the first The connecting device 41 has at least 2N independent leads.
  • the multiple outputs of the electron source control device 4 are respectively connected to the base layer 101 and the gate layer 103 of each electron-emitting region through the first connecting means 41, Thereby independent control of each electron-emitting region is achieved.
  • the electron emission regions 11, 12, 13, ... of the N different positions of the electron source 1 are linearly arranged, and the electron beam current can be emitted at different positions of the electron source 1.
  • the anode 2 is arranged corresponding to the electron source 1, that is, as shown in Fig. 8, the anode 2 is located above the electron source 1, having the same or similar shape and size as the electron source 1, and the surface of the anode 2 on which the target material is located Opposite the surface of the gate layer 103 of the electron source 1, it maintains a parallel or substantially parallel relationship.
  • the electron beam streams E generated by the electron-emitting regions 11, 12, 13, ... generate N X-ray targets 21, 22, 23, ... at different positions on the anode 2, respectively.
  • such an X-ray source that produces a plurality of X-ray targets at different positions of the anode is referred to as a distributed X-ray source.
  • FIG. 9 is a schematic view showing a distributed X-ray source having a plurality of target materials for an anode according to an embodiment of the present invention.
  • the anode 2 of the distributed X-ray source contains at least two different target materials, which can produce X-rays of different integrated energy at different target locations.
  • X-ray is a continuous energy spectrum.
  • the concept of "comprehensive energy" is used to illustrate the combined effect of the X-ray ratio change of various energies.
  • the electron source 1 comprises at least two electron emission regions, and the electron beam current emitted from each electron emission region forms an X-ray target at different positions of the anode 2, and different target materials are disposed at different target positions of the anode 2, due to different The materials have different identification spectra, so that X-rays with different levels of energy can be obtained.
  • the anode 2 is based on a molybdenum material, and the surface of the anode 2 (the surface opposite to the electron source 1) is ion-sputtered at a target position 21 opposite to the electron-emitting regions 11, 13, 15 ...
  • a 200 ⁇ m thick tungsten target was sputter deposited at 23, 25..., and a 200 ⁇ m thick copper target was sputter deposited at target sites 22, 24, 26... opposite to the electron emission regions 12, 14, 16
  • the electron beam current E generated by each electron-emitting region has the same intensity and energy, but the X-ray X1 generated by the target position 21, 23, 25... (tungsten target)
  • the integrated energy is higher than the combined energy of the X-ray X2 produced by the target sites 22, 24, 26... (copper target).
  • FIG. 10 is a schematic diagram showing three operation modes of the distributed X-ray source according to the embodiment of the present invention.
  • a distributed X-ray source using the electron source 1 of the present invention has a plurality of modes of operation, resulting in various advantageous effects.
  • a typical distributed X-ray The internal structure of the line source is such that the plurality of electron-emitting regions 11, 12, 13 ... of the electron source 1 have the same elongated shape and are arranged neatly and uniformly linearly in the same plane along the narrow side.
  • the shape of the electron source 1 is also elongated, and the long-side direction of the electron source 1 is perpendicular to the long-side direction of the electron-emitting region;
  • the anode 2 is also elongated, aligned with the electron source 1 and arranged in parallel.
  • the distributed X-ray source can have multiple modes of operation, exhibiting a variety of benefits.
  • the first type of work mode is mode A.
  • the N electron-emitting regions 11, 12, 13, ... each independently emit electrons, and X-rays are generated at corresponding N positions on the anode 2 to form N targets.
  • the first mode each electron-emitting region is sequentially arranged to generate electron beam current emission for a certain period of time T, that is, under the control of the electron source control device 4: 1 electron-emitting region 11 emits an electron beam stream at the anode
  • the position 21 of 2 generates an X-ray emission, and after a time T, the emission is stopped; 2 the electron emission region 12 emits an electron beam current, and at the position 22 of the anode 2, X-ray emission is generated, and after a time T, the emission is stopped; 3 the electron emission region 13 emits
  • the electron beam current, X-ray emission is generated at the position 23 of the anode 2, and the emission is stopped after the time T; ..., and so on, after all the electron-emitting regions have completed one electron
  • the second way a partially spaced electron-emitting region, which in turn generates electron beam current emission for a certain period of time T, that is, under the control of the electron source control device 4: 1 electron-emitting region 11 emits a beam of electrons at the position of the anode 2 21 generates X-ray emission, and elapses from time T, stops emission; 2 electron emission region 13 emits electron beam current, generates X-ray emission at position 23 of anode 2, stops emission after time T; 3 electron emission region 15 emits electron beam current X-ray emission is generated at the position 25 of the anode 2, the emission is stopped after the time T, ..., and so on, until the end of the electron source, and then the electron-emitting region may be re-emitted, or may be another portion (12, 14,16,...) emits and forms a loop.
  • a third way a part of the electron-emitting regions form a combination, each combination sequentially generating electron beam current emission of a certain time length T, that is, under the control of the electron source control device 4: 1 electron-emitting regions 11, 14, 17 emit electron beam current X-ray emission is generated at positions 21, 24, and 27 of the anode 2, respectively, and emission is stopped after time T; 2 electron-emitting regions 12, 15, 18 emit electron beam currents, which are generated at positions 22, 25, and 28 of the anode 2, respectively.
  • each electron emission region is independently controlled and generates independent target points corresponding to the electron emission regions, each electron emission region having a large width, for example 2 mm, having a large emission current, for example, greater than 1.6.
  • the second type of work mode is mode B.
  • the N electron-emitting regions 11, 12, 13, ... are combined with n adjacent ones to perform electron emission in groups, and X-rays can be generated at corresponding N/n positions on the anode to form N/. n targets.
  • the electron-emitting regions (11, 12, 13) form a group 1
  • the electron-emitting regions (14, 15, 16) form a group 2
  • the electron-emitting regions (17, 18, 19) form a group 3, ....
  • the advantage of the working mode mode B is that, on the one hand, the intensity of the emission current is increased by the combination of the electron-emitting regions, and the X-ray intensity of each target point is also increased synchronously, and can be performed according to the specific use of the distributed X-ray source.
  • the width of each electron emission region can be further reduced, and a larger number of electron emission regions can be combined into one group, when an electron emission region fails (If a micro-electronic transmitting unit is short-circuited), the electron-emitting area is removed in the group, the group still works normally, and the emission current is reduced by 1/n. This reduction is easily compensated by adjusting the parameters.
  • the entire distributed X-ray source still has N/n targets, ie no "black spots” (similar to the black lines of the display) due to the failure of an electron-emitting area. Avoiding "black spots”, on the one hand, avoids blind spots on X-ray targets and reduces faults. On the other hand, if a few electron-emitting units fail prematurely "aging", by avoiding "black spots", it is actually Extends the service life of distributed X-ray sources.
  • the number n of combinations in this mode may be fixed or unfixed, such as 3 groups, 5 groups, etc., N/n is only indicated as the number of groups and targets. The quantity is the number N of electron-emitting areas divided by a certain combination factor n.
  • the third type of work mode is mode C.
  • the advantage of the working mode mode C has the two advantages of increasing the intensity of the emitted electron beam flow described in mode B and not causing the "black spot" of the target due to the failure of the individual electron-emitting region, and on the other hand, the mode C has More target points than mode B, smaller target center-to-center spacing (adjacent targets correspond to electron-emitting regions combined, partially overlapping), which is also advantageous for distributed X-ray sources, due to the increase
  • the number of targets increases the number of viewing angles, which greatly improves the image quality of an imaging system using the distributed X-ray source.
  • the factors n and a can be non-fixed values. It merely refers to a calculation method, indicating that the number of targets of mode C is less than mode A, more than mode B, and the advantage is that the electron emission current is greater than mode A and "black spots" can be avoided.
  • N is a positive integer of N ⁇ 3, and n is a positive integer of N>n ⁇ 2, and a is a positive integer of n>a ⁇ 1.
  • the operation mode of the X-ray source of the present invention is not limited to the above three modes as long as it is capable of causing electron emission regions of the electron source 1 to emit electrons in a predetermined order or to make a predetermined number of electrons adjacent to the electron source 1.
  • the emission area can be electronically emitted in a predetermined order.
  • the arrangement of the electron emission regions of the electron source 1 is only an exemplary specific structure, and the arrangement may also be an arrangement of electron emission regions of different shapes, a non-aligned arrangement, or a non-uniform arrangement. It may be a multi-dimensional arrangement (for example, an entire column of 4 ⁇ 100), or an arrangement not on the same plane, and the like, and is an achievable manner of the electron source 1 of the present invention.
  • the corresponding anode 2 has a structure and shape that matches the arrangement of the electron-emitting regions.
  • FIG. 11 is a schematic view showing a distributed X-ray source having a specific structure of an electron source according to an embodiment of the present invention.
  • the distance from the electron source 1 to the anode 2 is close to the order of magnitude, for example, the electron source 1 to the anode 2
  • the ratio of the distance to the width of the electron-emitting region is less than 10, and the surface of the electron-emitting region is curved in the width direction (the left-right direction in FIG. 11) so that the electrons emitted from the respective micro-electron emission units 100 in the electron-emitting region have more Good focus effect.
  • the surface curvature of the electron-emitting region may be arranged centering on the position of the target on the corresponding anode 2, for example, the electron beam E emitted from the electron-emitting region 11 forms a target 21 on the anode 2, and the surface of the electron-emitting region 11 is in the width
  • the direction (or section) is on an arc centered at the center of 21.
  • FIG. 12 is a schematic view showing a distributed X-ray source with a focusing device according to an embodiment of the present invention.
  • the distributed X-ray source further includes a focusing device 6, which is disposed in plurality corresponding to the electron emission region, between the electron source 1 and the anode 2.
  • the focusing device 6 may be, for example, an electrode, or may be a wire package or the like capable of generating a magnetic field.
  • the focusing device 6 When the focusing device 6 is an electrode, it can be connected to an external power source (or a control system, not shown) through a focusing cable and a connecting device (not shown) to obtain a pre-applied voltage (potential potential), so that each micro-emission The electrons generated by the unit 100 pass through the focusing device 6 to obtain an effect of focusing toward the center.
  • the focusing device 6 When the focusing device 6 is an electrode, it may also be an electrode insulated from other components.
  • each of the micro-emitting units 100 emits electrons, a part of the electrons generated by the micro-emissive unit 100 located at the edge of the emitting region is intercepted by the focusing electrode to form static electricity, and static electricity is generated.
  • the field produces a thrust that is concentrated toward the center of the subsequent electrons passing through the focusing device 6.
  • the focusing device 6 is a wire package, it can be connected to an external power source (or a control system, not shown) through a focusing cable and a connecting device (not shown), so that a predetermined current flows in the wire package and is emitted.
  • a focusing magnetic field of a predetermined intensity is generated above the region, so that electrons generated by the respective micro-emitting units 100 pass through the focusing device 6 to obtain an effect of focusing toward the center.
  • the focusing means is characterized by being arranged in one-to-one correspondence with each of the electron-emitting regions, and surrounding all of the micro-electron emitting units 100 in the electron-emitting region above the electron-emitting region.
  • the focus cable and connection device, external power supply (or control system) not shown in the figure are Existing mature technology.
  • the distributed X-ray source further includes a collimating device 7 disposed on the output path of the X-rays for outputting X-rays of a cone shape, a plane sector shape, a pen shape, or a multi-point parallel.
  • the collimating device 7 can be an internal collimator mounted inside a distributed X-ray source or an external collimator mounted outside the distributed X-ray source.
  • the material of the collimating device 7 is usually a high-density metal material such as one or more of tungsten, molybdenum, depleted uranium, lead, steel, and the like.
  • the shape of the collimating device 7 is typically designed for the purpose of the distributed X-ray source. For convenience of description, a coordinate system is defined.
  • the longitudinal direction of the distributed X-ray source (the direction in which the target is arranged) is the X direction, the width direction is the Y direction, and the emission direction of the X-ray is the Z direction. As shown in (A) of FIG.
  • the collimating device 7 is disposed in front of the distributed X-ray source (in the direction of outputting X-rays), and has an X-ray collimating slit having a large width inside, and the length of the collimating slit is
  • the distributed X-ray source has a target distribution length close to that, and the collimating device outputs a cone-shaped X-ray beam having a large angle in the X direction and a large angle in the Y direction (only shown in (A) of FIG. 13 A cone X-ray beam produced by a central location target).
  • the collimating device 7 is disposed in front of the distributed X-ray source, the internal X-ray collimation slit is a very narrow thin slit, and the length of the collimating slit is distributed with the distributed X-ray source.
  • the target distribution length is close, and the collimating device outputs a fan-shaped X-ray beam in the XZ plane, that is, the thickness in the Y direction is very small (only the fan-shaped X-ray generated by a central position target is shown in (B) of FIG. bundle).
  • the collimating device 7 is disposed in front of the distributed X-ray source, and the internal X-ray collimating slit is a series of thin lines having a certain width (Y direction) arranged corresponding to the target arrangement.
  • the alignment length of the collimating slit is close to the distribution length of the target of the distributed X-ray source.
  • the collimating device outputs an X-ray beam array having a certain divergence angle in the Y direction and a certain thickness in the X direction, in the XZ plane.
  • a multi-point parallel X-ray beam As shown in (D) of FIG.
  • the collimating device 7 is disposed in front of the distributed X-ray source, and the internal X-ray collimating slit is a series of small holes arranged in correspondence with the target arrangement, and the arrangement length of the collimating slits Close to the target distribution length of the distributed X-ray source, the collimating device outputs an array of X-ray spot beams in the XY plane, each spot beam being a pen-shaped X-ray beam coaxial with the Z-direction. (A), (B), (C) of Fig.
  • the collimating device 7 shown in (D) is external to the radiation source, and limits the shape of the X-ray beam on the X-ray output path; it can also be installed inside the radiation source, that is, mounted on the anode 2 and the vacuum.
  • the boxes 3 can be mounted close to the anode 2 or close to the wall of the vacuum box 3, and the shape of the X-ray beam is also limited in the X-ray output path.
  • the collimation device is mounted inside the source to reduce size and weight and, in some cases, better alignment.
  • FIG. 14 is a schematic view showing a ring-shaped distributed X-ray source according to an embodiment of the present invention.
  • a distributed X-ray source has a target shape arranged in a circle or a segment of an arc.
  • Figure 14 shows the case where the shape of the distributed X-ray source is a ring, the plurality of electron-emitting regions of the electron source 1 are arranged in a circle, the corresponding anode 2 is also a circumference, and the vacuum box 3 surrounds the electron source 1 and the anode.
  • the ring of 2 the center of the ring is O, and the generated X-rays point to the center O, or the axis where O is located.
  • the shape of the distributed X-ray source may also be an ellipse, a 3/4 circle, a semicircle, a 1/4 circle, an arc of other angles, and the like.
  • Fig. 15 is a schematic diagram showing a block type distributed X-ray source according to an embodiment of the present invention.
  • a distributed X-ray source has a target arrangement shape of a square, a broken line segment or a straight line connected end to end.
  • 15 shows a case where the shape of the distributed X-ray source is a square type, the plurality of electron emission regions of the electron source 1 are arranged in a square shape, the corresponding anode 2 is also a square shape, and the vacuum box 3 surrounds the electron source 1 and The box type of the anode 2 produces X-rays that point to the inside of the box.
  • the shape of the distributed X-ray source can also be U-shaped (3/4 square), L-shaped (half-square), straight line segment (1/4 square), positive-polygonal type, other non-right-angle connected polygonal line segments, etc. .
  • FIG. 16 are schematic views showing several cross-sectional structures of a distributed X-ray source according to an embodiment of the present invention.
  • the target on the anode 2 of the distributed X-ray source is a transmission target, and may also be a reflection target.
  • FIG. 16 illustrates a case where the anode target of the distributed X-ray source is a transmission target, that is, The direction in which the X-rays are output is substantially the same as the direction of the incident electron beam stream E.
  • (A) of FIG. 16 can be understood that a plurality of electron emission regions of the electron source 1 are arranged on an outer circle, and a surface of the electron emission region is parallel to an axis of the ring, and a plurality of targets of the anode 2 are arranged. On the circle, the two circles are concentric, and the vacuum box 3 is a hollow ring surrounding the electron source 1 and the anode 2.
  • the target position of the anode 2 has a very thin thickness, for example, less than 1 mm, and the directions of the electron beam E and the X-ray are both Point to the center O of the ring.
  • (A) of FIG. 16 can be understood that a plurality of electron emission regions of the electron source 1 are arranged on an outer square, and a surface of the electron emission region is parallel to a center line of the square, and a plurality of targets of the anode 2 are arranged at On the inner square, the centers of the two squares coincide, and the vacuum box 3 is a hollow annular frame surrounding the electron source 1 and the anode 2.
  • the target position of the anode 2 has a very thin thickness, for example, less than 1 mm, electron beam current E and The direction of the X-rays points to the inside of the box.
  • (B) of FIG. 16 shows a case where the anode target of the distributed X-ray source is a reflection target, that is, the direction in which the X-rays are output forms a 90-degree angle with the direction of the incident electron beam stream E (here, the angle of 90 degrees) Including an angle of about 90 degrees), the range may be from 70 degrees to 120 degrees, preferably from 80 degrees to 100 degrees.
  • the plurality of electron emission regions of the electron source 1 are arranged on a circle, and the surface of the electron emission region is perpendicular to the axis O of the ring, and the plurality of targets of the anode 2 are arranged at
  • the two circles are equal in size, the center of the circle is on the axis of the ring, and the planes of the two circles are parallel; or further, the anode 2 is inclined at an angle (for example, 10 degrees) with respect to the electron source 1 so that the anode
  • the plane in which the plurality of targets are arranged is a conical surface, and the axis of the conical surface is the axis of the ring.
  • the vacuum box 3 is a hollow ring surrounding the electron source 1 and the anode 2, the square of the electron beam stream E is parallel to the axis, and the direction of the X-ray is directed to the center O of the ring.
  • (B) of FIG. 16 can be understood that the plurality of electron-emitting regions of the electron source 1 are arranged on a square, the surface of the electron-emitting region is perpendicular to the center line O of the square, and the plurality of targets of the anode 2 are arranged.
  • the two squares are equal in size and the planes are parallel; or further, the anode 2 is inclined at an angle (for example, 10 degrees) with respect to the electron source 1, so that the faces of the plurality of targets of the anode 2 are square cones.
  • the center line of the square cone is the center line of the square.
  • the vacuum box 3 is a hollow annular frame surrounding the electron source 1 and the anode 3.
  • the square of the electron beam stream E is parallel to the center line of the square, and the direction of the X-ray is directed to the inside of the box.
  • the light source shown in (C) of FIG. 16 is also a transmission target, and compared with (A) of FIG. 16, only the arrangement of the electron source 1 and the anode 2 inside the ring (or the square) is different from the inner and outer circles. (or inner and outer squares) become front and rear circles (or front and rear squares), the direction of electron beam E and X-rays are parallel to the axis of the ring (or the center line of the box), ie, the distributed X-ray is the ring The side (or the side of the box) is launched.
  • the light source shown in (D) of FIG. 16 is also a reflective target, and compared with (B) of FIG. 16, only the arrangement of the electron source 1 and the anode 2 inside the ring (or the square) is different from the front and rear circles. (or squares in front and rear) become inner and outer circles (or inner and outer squares), the direction of electron beam current E is perpendicular to the axis of the ring (or the center line of the square), and the direction of the X-ray is parallel to the axis of the ring (or square The centerline of the frame), that is, the distributed X-rays are emitted toward the side of the ring (or the side of the box).
  • FIG. 16(A) corresponds to FIG. 14 and FIG. 15, and FIG. 16(B) to FIG. 14 and FIG. 15 are combined for the sake of better description of FIG. 16(B). .
  • the shape of the distributed X-ray source may also be a combination of the above-mentioned arc segments and straight segments, spirals, etc., which are all machinable for modern processing techniques.
  • FIG. 17 is a schematic view showing a transmission imaging system using the distributed X-ray source of the present invention according to an embodiment of the present invention.
  • the fluoroscopic imaging system using the X-ray source of the present invention shown in Figure 17 comprises: at least one X-ray source 81 of the present invention for generating X-rays covering the detection area; at least one detector 82, relative to the X-ray source 81 The other side of the detection area is for receiving X-rays; and the transmitting device 84 is located between the X-ray source 81 and the detector 82 for carrying the object 83 to be detected and passing through the detection area.
  • the X-ray source is one, the X-ray source has an electron emission region, forming an X-ray target, and the detector has multiple, forming a linear array or a planar array (also It can be a planar detector) and has a similar composition to existing X-ray fluoroscopic imaging systems.
  • the scheme has the advantages of simple structure, small volume and low cost, but the field emission X-ray source of the invention has the advantages of low control voltage and fast starting speed.
  • the X-ray source is one.
  • the X-ray source has two electron-emitting regions.
  • the target materials of the two targets are different, and two X-ray beams of different energies can be alternately generated.
  • the array or planar array (which can also be a planar detector), or further a dual energy detector.
  • the scheme has the advantages of simple structure, small volume and low cost, and at the same time, the dual-energy imaging increases the material recognition ability of the detection object.
  • the X-ray source is a distributed X-ray source having a plurality of X-ray targets, and the detector has a plurality of detectors forming a linear array or a planar array (which may also be a planar detector).
  • the plurality of targets are fluoroscopically imaged by the different angles (positions), and finally a fluoroscopic image having multi-level information in the depth direction is obtained, which is simple in structure compared to the multi-view system using a plurality of common X-ray sources. Small size and low cost.
  • the X-ray source is a distributed X-ray source having a plurality of X-ray targets, and the detector is one or a few, and the fluoroscopic image is obtained by the "reverse" imaging principle.
  • the program features reduced detector count and reduced cost.
  • the X-ray source is one or more distributed X-ray sources, and the detector is a corresponding one or more arrays, and all X-ray targets are formed to surround the detected object, and the surrounding angle exceeds 180 degrees.
  • the solution is arranged by a large surrounding angle of the static X-ray source, and a complete 3D fluoroscopic image of the detection object can be obtained, and the inspection speed is fast and the efficiency is high.
  • the X-ray source is a plurality of distributed X-ray sources, and the detectors are corresponding arrays, and are arranged on a plurality of planes along the transmission direction of the object to be detected. It is characterized in that the inspection speed can be doubled, or a multi-energy 3D fluoroscopic image can be formed by X-rays of different energies in different planes, or the detected image quality can be increased in a progressive manner, for example, the first plane is roughly checked to find out In the suspicious area, the second plane carefully examines the suspicious area with different parameters to obtain high resolution and sharpness images.
  • FIG. 18 is a schematic view showing a backscatter imaging system using the distributed X-ray source of the present invention according to an embodiment of the present invention.
  • the backscatter imaging system using the distributed X-ray source of the present invention shown in FIG. 18 includes: at least one distributed X-ray source 81 of the present invention for generating a plurality of pencil-shaped X-ray beams covering a detection area; at least one The detector 82, on the same side of the detection area as the X-ray source 81, receives X-rays reflected from the object under test.
  • the specific solution 1 further includes a transmitting device 84 for carrying the object to be detected 83, and completing the overall imaging of the object to be detected through the detecting region.
  • Specific solution 2 further includes an exercise device for moving the distributed X-ray source 81 and the detector 82 to sweep the detection area over the object to be detected, and complete the overall imaging of the object to be detected.
  • the third solution the distributed X-ray source 81 and the detector 82 are at least two groups distributed on different sides of the object to be detected, and then the object to be detected is moved by the transmitting device or the X-ray source is moved by the moving device to realize the detection.
  • an X-ray inspection system comprising: at least two distributed X-ray sources of the present invention; at least two sets of detectors corresponding to the X-ray source; and an image integrated processing system. At least one set of distributed X-ray sources and detectors perform fluoroscopic imaging on the detected object, at least one set of distributed X-ray sources and detectors perform backscatter imaging on the detected object, and the image integrated processing system performs fluoroscopic images and backscattered images. Comprehensive processing to obtain more characteristic information of the detected object.
  • fluoroscopic imaging and backscatter imaging systems may be in the form of a common ground arrangement or integrated on a mobile device, such as integrated into a vehicle, to become a movable fluoroscopic imaging system and a movable back. Scatter imaging system.
  • fluoroscopic imaging and backscatter imaging systems have a wide range of meanings, and can be used to inspect small vehicles, goods, luggage, parcels, mechanical parts, industrial products by adding or not adding auxiliary parts. , personnel, body parts, etc.
  • an image-guided radiotherapy apparatus comprising: a radiation therapy radiation source for generating a beam of radiation for treating a patient; a multi-leaf collimator for adjusting the shape of the radiation therapy beam to match the lesion a moving bed for moving and positioning the patient to align the position of the radiation therapy beam with the location of the lesion; at least one distributed X-ray source of the present invention for generating a beam of radiation for diagnostic imaging of the patient; a flat panel detector, a beam for receiving diagnostic imaging; a control system that forms a diagnostic image based on the beam received by the flat panel detector, locates the position of the lesion in the diagnostic image, directs the center of the beam of the radiation therapy to align with the center of the lesion, and guides the leafy
  • the shape of the treatment beam of the collimator matches the shape of the lesion.
  • the distributed X-ray source is a circular X-ray source that is circular or square-shaped and outputs X-rays on the side (as shown in FIGS. 16(C) and (D)), the axis of the distributed X-ray source or The centerline is in line with the beam axis of the therapeutic ray source, i.e., the location of the diagnostic ray source and the therapeutic ray source are in the same direction as the patient.
  • the flat panel detector is located on the opposite side of the patient relative to the diagnostic source. It is possible to obtain image-guided radiation therapy for patients without obtaining a diagnostic radiography image while rotating the radiation therapy device arm. It is a "real-time" image-guided radiation therapy for treating physiologically active parts such as the lungs.
  • the distributed X-ray source of the present invention has a plurality of targets, and the obtained image is different from the ordinary planar image, and is a "stereoscopic" diagnostic image with depth information, which can further improve the position of the therapeutic beam in the image guiding treatment. Guide accuracy and positioning accuracy.
  • the present invention is not limited thereto, and it should be understood that various combinations, various modifications, and application of the electron source or the present invention of the present invention are possible within the scope of the gist of the present invention.
  • the device, device, or system of the inventive X-ray source is within the scope of the present invention.
  • 3 vacuum box 4 electron source control device; 41 first connection device; 5 high voltage power supply; 51 second connection device; 6 focusing device;
  • the size of the S microelectron emitting unit The size of the S microelectron emitting unit; the size of the D opening; the distance from the H electron emitter to the gate layer; the height of the h electron emitter; the spacing between the electron emitting regions of d;

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Abstract

一种电子源（1）和使用了该电子源（1）的X射线源（81）。该电子源（1）具有至少两个电子发射区域（11）（12）（13），每个电子发射区域包含多个微型电子发射单元（100），该微型电子发射单元（100）包括：基极层（101）、位于该基极层（101）上的绝缘层（102）、位于该绝缘层（102）上的栅极层（103）、位于该栅极层（103）上的开口（105）、以及固定于该基极层（101）上与该开口（105）位置对应的电子发射体（104），同一个电子发射区域内的各微型电子发射单元（100）之间被电连接，同时发射电子或者同时不发射电子，不同的电子发射区域之间被电隔离。

Description

电子源、X射线源、使用了该X射线源的设备 技术领域
本发明涉及产生电子束流的电子源和使用该电子源产生X射线的X射线源，特别涉及从不同位置按预定方式产生电子束流的电子源和从不同位置按预定方式产生X射线的X射线源以及使用了该X射线源的设备。
背景技术
电子源是指能够产生电子束流的设备或部件，惯用称呼包括电子枪、阴极、发射体等，电子源在显示设备、X射线源、微波管等中具有广泛应用。X射线源是指产生X射线的设备，核心是X射线管，由电子源、阳极、真空密封外壳构成，通常还包括电源与控制系统、冷却及屏蔽等辅助装置。X射线源在工业无损检测、安全检查、医学诊断和治疗等领域具有广泛的应用。
传统的X射线源采用直热式螺旋钨丝为阴极，工作时通过电流，加热到约2000K的工作温度，产生热发射的电子束流，电子束流被阳极和阴极之间的数十万伏高压电场加速，飞向阳极并撞击靶面，产生X射线。
场致发射可以让多种材料，例如金属针尖、碳纳米管等，在常温下产生电子发射，获得电子束流。在纳米技术特别是碳纳米材料发展起来后，纳米材料场致发射电子源获得了快速发展。
X射线源要求其所采用的电子源具有较大的发射电流，通常发射电流大于1mA，例如目前医疗CT中的油冷旋转靶X射线源的电子源发射电流高达1300mA。如专利文献1那样，在以往的以纳米材料场致发射电子源 为阴极的X射线设备中，为了实现较大的发射电流，均采用纳米材料生成具有一定宏观尺寸的阴极发射面，并在发射面上方通过平行关系布置网状栅极，对场致发射进行控制。这种结构，由于机械加工精度、栅网形变量、安装精度的影响，栅网与阴极表面具有较大的距离，因此需要给栅极施加很高的电压，通常超过1000V，来控制场致发射。
以往，采用场致发射原理的电子发射单元具有大体相似的结构，例如，如图3的(A)、图3的(B)、图3的(C)所示。图3的(A)是专利文献2披露的技术方案，纳米材料31附着在基极层10的一定结构13上。图3的(B)是专利文献3披露的技术方案，纳米材料20直接生长在基极层12、14的平坦表面上。图3的(C)是专利文献4披露的技术方案，用于X射线源设备的电子源，具有宏观尺寸(毫米至厘米)的纳米材料平面330，其栅极层为宏观尺寸的栅网，栅网平面与纳米材料平面平行。
专利文献1：CN102870189B；
专利文献2：US5773921；
专利文献3：US5973444；
专利文献4：CN100459019。
发明内容
根据本发明的一个方面，提供一种具有新型结构的场致发射电子源，实现结构简单、成本低、控制电压低、发射电流强度大的目的，同时提供使用了该电子源的X射线源，输出X射线强度大，成本低，或者具有多个不同位置的X射线靶点，靶点流强大、间距小。
根据本发明的一个方面，提供一种控制电压低且发射电流大的场致发射电子源和使用了该电子源的X射线源。本发明的电子源具有多个电子发射区域，每个发射区域包含大量微型电子发射单元，本发明中的微型电子 发射单元的结构使得场致发射的控制电压很低，大量微型电子发射单元协调工作使电子发射区域具有大的发射电流。使用了该电子源的X射线源，通过阳极的设计可以成为双能X射线源；通过电子源的设计，可以获得具有多个不同位置的靶点的分布式X射线源；通过多种工作模式，可以增加每个靶点的X射线输出强度、减小靶点的间距、避免黑点，扩展了场致发射分布式X射线源的功能和应用，同时，通过降低控制电压，从而降低控制难度和生产成本，减少故障，增加了分布式X射线源的寿命。
此外，根据本发明的一个方面，还提供了具有上述特征的分布式X射线源在透视成像和背散射成像方面的应用，多种技术方案展现了使用该X射线源带来的低成本、高检查速度、高图像质量中的一个或多个优势。
此外，根据本发明的一方面，还提供了一种图像实时引导放射治疗系统，对于治疗具有生理运动的部位，例如肺、心脏等，“实时”的图像引导放射治疗可以降低照射剂量、减少对正常器官的照射，具有重要意义。而且，本发明的分布式X射线源具有多个靶点，其获得的引导图像不同于普通平面图像，是具有深度信息的“立体”诊断图像，可以进一步提高图像引导治疗中，对治疗射线束的位置引导精确性。
要达到本发明的目的，采用了如下的技术方案。
本发明的一个方面提供一种电子源，具有至少一个电子发射区域，所述电子发射区域包含多个微型电子发射单元，所述微型电子发射单元包括基极层、位于所述基极层上的绝缘层、位于所述绝缘层上的栅极层、位于所述栅极层上的开口、以及固定于所述基极层上且与所述开口位置对应的电子发射体，其中，所述电子发射区域内的各所述微型电子发射单元同时发射电子或者同时不发射电子。
此外，在本发明中，所述基极层用于提供结构支撑以及电连接。
此外，在本发明中，所述栅极层由导电材料构成。
此外，在本发明中，所述开口贯穿所述栅极层和所述绝缘层并且到达所述基极层。
此外，在本发明中，所述绝缘层的厚度小于200μm。
此外，在本发明中，所述开口的尺寸小于所述绝缘层的厚度。
此外，在本发明中，所述开口的尺寸小于所述电子发射体到所述栅极层的距离。
此外，在本发明中，所述电子发射体的高度小于所述绝缘层的厚度的二分之一。
此外，在本发明中，所述栅极层与所述基极层平行。
此外，在本发明中，所述微型电子发射单元在阵列排列方向上所占用的空间尺寸为微米级，优选所述微型电子发射单元在阵列排列方向上所占用的空间尺寸范围为1μm～200μm。
此外，在本发明中，所述电子发射区域的长度与宽度的比例大于2。
此外，在本发明中，所述基极层由基底层和位于所述基底层上的导电层构成，所述电子发射体固定在所述导电层上。
此外，在本发明中，所述电子发射区域的发射电流不小于0.8mA。
此外，本发明的一个方面提供一种电子源，具有至少两个电子发射区域，每个所述电子发射区域包含多个微型电子发射单元，所述微型电子发射单元包括用于提供结构支撑以及电连接的基极层、位于所述基极层上的绝缘层、位于所述绝缘层上且由导电材料构成的栅极层、贯穿所述栅极层和所述绝缘层并且到达所述基极层的开口、以及位于所述开口内并且固定于所述基极层的电子发射体，其中，同一个所述电子发射区域内的各所述微型电子发射单元之间被电连接，同时发射电子或者同时不发射电子，不同的所述电子发射区域之间被电隔离。
此外，在本发明中，所述绝缘层的厚度小于200μm。
此外，在本发明中，所述栅极层与所述基极层平行。
此外，在本发明中，不同的所述电子发射区域之间被电隔离是指：各所述电子发射区域的所述基极层是各自分开独立的、或者各所述电子发射区域的所述栅极层是各自分开独立的、或者各所述电子发射区域的所述基极层和所述栅极层都是各自分开独立的。
此外，在本发明中，不同的所述电子发射区域可以通过控制以预定的顺序进行电子发射，包括顺次、间隔、交替、部分同时和分组组合等方式。
此外，在本发明中，同一所述电子发射区域的各所述微型电子发射单元的所述基极层为同一物理层，各所述微型电子发射单元的所述栅极层为同一物理层，各所述微型电子发射单元的所述绝缘层也可以为同一物理层。
此外，在本发明中，所述微型电子发射单元在所述电子发射区域内的阵列排布方向上，尺寸大小为微米级。
此外，在本发明中，所述微型电子发射单元在阵列排布方向上占用的空间尺寸范围为1μm至200μm。
此外，在本发明中，所述开口的尺寸小于所述绝缘层的厚度。
此外，在本发明中，所述开口的尺寸小于所述电子发射体到所述栅极层的距离。
此外，在本发明中，所述电子发射体的高度小于所述绝缘层的厚度的二分之一。
此外，在本发明中，所述电子发射体的线性长度垂直于所述基极层的表面。
此外，在本发明中，所述电子发射体含有纳米材料而构成。
此外，在本发明中，所述纳米材料是单壁碳纳米管、双壁碳纳米管、多壁碳纳米管、或者它们的组合。
此外，在本发明中，所述基极层由基底层和位于所述基底层上的导电层构成，所述基底层用于提供结构支撑，所述导电层用于使得同一所述电子发射区域内的各所述微型电子发射单元的基极(纳米材料的固定极)形成电气连接。
此外，在本发明中，所述电子发射区域的长度与宽度的比例大于2。
此外，在本发明中，各所述电子发射区域大小相等，沿着窄边平行、整齐、均匀排列。
此外，在本发明中，每个所述电子发射区域的发射电流大于0.8mA。
此外，本发明的一个方面提供一种X射线源，包括：真空盒；电子源，配置在所述真空盒内；与所述电子源相对配置在所述真空盒内的阳极；用于在所述电子源的所述电子发射区域的所述基极层和所述栅极层之间施加电压的电子源控制装置；以及与所述阳极连接，用于对所述阳极提供高压的高压电源，其特征在于：所述电子源具有至少一个电子发射区域，所述电子发射区域包含多个微型电子发射单元，每个所述微型电子发射单元在阵列排布方向上占用的空间尺寸大小为微米级，所述微型电子发射单元包括用于提供结构支撑以及电连接的基极层、位于所述基极层上的绝缘层、位于所述绝缘层上且由导电材料构成的栅极层、贯穿所述栅极层和所述绝缘层并且到达所述基极层的开口、以及位于所述开口内并且固定于在所述基极层的电子发射体，其中，所述电子发射区域内的各所述微型电子发射单元同时发射电子或者同时不发射电子。
此外，在本发明中，所述绝缘层的厚度小于200μm。
此外，在本发明中，所述电子源控制装置给所述电子源施加的场致发射控制电压小于500V。
此外，本发明的一个方面提供一种分布式X射线源，包括：真空盒；电子源，配置在所述真空盒内；与所述电子源相对配置在所述真空盒内的阳极；用于在所述电子源的所述电子发射区域的所述基极层和所述栅极层之间施加电压的电子源控制装置；与所述阳极连接，用于对所述阳极提供高压的高压电源，其特征在于：所述电子源包含至少两个(称为N个)电子发射区域，每个所述电子发射区域包含多个微型电子发射单元，所述微型电子发射单元包括基极层、位于所述基极层上的绝缘层、位于所述绝缘层上的栅极层、位于所述栅极层上的开口、以及固定于所述基极层上与所 述开口位置对应的电子发射体，其中，同一个所述电子发射区域内的各所述微型电子发射单元之间被电连接，同时发射电子或者同时不发射电子，不同的所述电子发射区域之间被电隔离。
此外，在本发明中，所述电子源的不同的所述电子发射区域之间，所述基极层是电隔离的，每一个所述基极层均通过独立的引线连接到电子源控制装置。
此外，在本发明中，所述电子源的不同的所述电子发射区域之间，所述栅极层是电隔离的，每一个所述栅极层均通过独立的引线连接到电子源控制装置。
此外，在本发明中，所述阳极的表面与所述电子源的表面相对，具有相似的形状和尺寸，保持平行或大致平行的关系，产生至少两个位置不同的靶点。
此外，在本发明中，所述阳极至少包含两种不同的靶材料，在不同的靶点产生综合能量不同的X射线。
此外，在本发明中，N个所述电子发射区域具有长条形形状，且沿着窄边的方向，在同一个平面内线性排列。
此外，在本发明中，N个所述电子发射区域各自独立进行电子发射，在所述阳极上的与所述电子发射区域对应的N个位置分别产生X射线，形成N个靶点。
此外，在本发明中，N个所述电子发射区域，以相邻的n个进行不重叠的组合，以组进行电子发射，可以在所述阳极上对应的N/n个位置分别产生X射线，形成N/n个靶点。
此外，在本发明中，N个所述电子发射区域，以相邻的n个进行有a个重叠的组合，以组进行电子发射，在所述阳极上对应的个位置分别产生X射线，形成个靶点。
此外，在本发明中，所述电子发射区域的表面在宽度方向上为弧形，所述电子发射区域内的各所述微型电子发射单元发射的电子分别向一个点聚焦。
此外，在本发明中，所述的分布式X射线源还包括聚焦装置，所述聚焦装置与所述电子发射区域相对应，数量相同，布置在所述电子源与所述阳极之间。
此外，在本发明中，所述分布式X射线源还包括配置在所述真空盒内或者所述真空盒外的准直装置，所述准直装置布置在X射线的输出路径上，用于输出锥形、平面扇形、笔形或者多点平行等形式的X射线。
此外，在本发明中，所述分布式X射线源的靶点的排列形状为圆形或者弧形。
此外，在本发明中，所述分布式X射线源的靶点的排列形状为首尾相邻的方形、折线段或者一段直线。
此外，在本发明中，所述阳极靶为透射靶，所输出的X射线与来自所述电子源的电子束流为同一方向。
此外，在本发明中，所述阳极靶为反射靶，所输出的X射线与来自所述电子源的电子束流成90度角。
此外，本发明的一个方面提供一种使用了本发明的X射线源的透视成 像系统，具备：至少一个本发明的X射线源，用于产生覆盖检测区域的X射线；至少一个探测器，位于所述检测区域的不同于所述X射线源的另一侧，用于接收X射线；以及传送装置，位于所述X射线源与所述探测器之间，用于承载受检测对象并使所述受检测对象通过检测区域。
此外，本发明的一个方面提供一种使用了本发明的分布式X射线源的背散射成像系统，具备：至少一个本发明的分布式X射线源，用于产生多个笔形X射线束，覆盖检测区域；至少一个探测器，位于所述检测区域的与所述X射线源相同的一侧，用于接收从受检测对象反射回来的X射线。
此外，在本发明的背散射成像系统中，具有至少两组所述X射线源和所述探测器的组合，所述至少两组组合配置在所述受检测对象的不同侧。
此外，在本发明的背散射成像系统中，还具备：传送装置，用于承载所述受检测对象并使所述受检测对象通过所述检测区域。
此外，在本发明的背散射成像系统中，还具备：运动装置，用于移动所述X射线源和所述探测器，使所述X射线源和所述探测器通过受检测对象所在的区域。
此外，本发明的一个方面提供一种X射线检测系统，具备：至少两个本发明的分布式X射线源；与所述X射线源对应的至少两组探测器；以及图像综合处理系统。其中，至少一组所述分布式X射线源和所述探测器对检测对象进行透视成像，至少一组所述分布式X射线源和所述探测器对检测对象进行背散射成像，图像综合处理系统对透视图像和背散射图像进行综合处理，获得受检测对象的更多特征信息。
此外，本发明的一个方面提供一种实时图像引导放射治疗设备，具备：放射治疗射线源，用于产生对病人进行放射治疗的射线束；多叶准直 器，用于调整放射治疗射线束的形状，使得与病灶匹配；移动床，用于移动并定位病人，使放射治疗射线束位置与病灶位置对准；至少一个诊断射线源，所述诊断射线源是本发明的分布式X射线源，用于产生对病人进行诊断成像的射线束；平板探测器，用于接收诊断成像的射线束；控制系统，根据所述平板探测器所接收的射线束形成诊断图像，对所述诊断图像中病灶的位置进行定位，引导放射治疗的射线束中心与病灶中心对准，引导所述多叶准直器的治疗射线束形状与病灶形状匹配。其中，诊断射线源是形状为圆环形或方框形且侧面输出X射线的分布式X射线源，分布式X射线源的轴线或中心线与所述放射治疗射线源的束流轴线为同一直线，即所述诊断射线源与所述放射治疗射线源的位置相对病人同向。
根据本发明，能够提供控制电压低并且发射电流强度大的电子源以及使用了该电子源的X射线源、使用了该X射线源的成像系统、X射线检测系统以及实时图像引导放射治疗设备等。
附图说明
图1是示出本发明的实施方式所涉及的电子源的结构示意图。
图2是示出本发明的实施方式所涉及的微型电子发射单元的结构示意图。
图3的(A)～(C)是示出以往的场致发射单元的几种结构的示意图。
图4是示意性地示出本发明的实施方式所涉及的电子源的前端面剖视图的图。
图5的(A)～(C)是示出本发明的实施方式中的几种以不同方式进 行区域分隔的电子源的示意图。
图6是示出本发明的实施方式所涉及的微型电子发射单元的具体结构的示意图。
图7的(A)～(C)是示出纳米材料以不同方式固定的微型电子发射单元的示意图。
图8是示出使用了本发明的实施方式所涉及的电子源的X射线源的结构示意图。
图9是示出本发明的实施方式所涉及的、阳极具有多种靶材料的分布式X射线源的示意图。
图10是示出本发明的实施方式所涉及的分布式X射线源的三种工作模式的示意图。
图11是示出本发明的实施方式所涉及的电子源为特定结构的分布式X射线源的示意图。
图12是示出本发明的实施方式所涉及的带有聚焦装置的分布式X射线源的示意图。
图13的(A)～(D)是示出本发明的实施方式所涉及的分布式X射线源的几种准直效果的示意图。
图14是示出本发明的实施方式所涉及的圆环型的分布式X射线源的示意图。
图15是示出本发明的实施方式所涉及的方框型的分布式X射线源的示意图。
图16的(A)～(D)是示出本发明的实施方式所涉及的分布式X射线源的几种剖面结构的示意图。
图17是示出本发明的实施方式所涉及的使用了分布式X射线源的透射成像系统的示意图。
图18是示出本发明的实施方式所涉及的使用了分布式X射线源的背散射成像系统的示意图。
具体实施方式
以下，基于附图详细地对本发明进行说明。图1是本发明的电子源的一种结构的示意图。如图1所示，本发明的电子源1包含电子发射区域11、电子发射区域12等多个电子发射区域，此外，虽然未图示，但是电子源1也可以仅包含一个电子发射区域。如图1所示，每个电子发射区域包含多个微型电子发射单元100。此外，同一电子发射区域内的微型电子发射单元100之间被物理连接(电连接)，不同的电子发射区域之间，具有物理分隔(即，不同的电子发射区域之间被电隔离)。此外，在图1中，多个电子发射区域11、12、……沿着电子发射区域的宽度方向(在图1中示出为左右方向)排列为一行，但是，本发明并不限于此，电子发射区域也可以是其他排列方式，例如，排列有多行，或者排列有多行并且每行的电子发射区域以彼此交错的方式布置等，此外，电子发射区域的大小、形状、电子发射区域之间的距离可以根据需要来设定。
同一电子发射区域内的所有微型电子发射单元100同时发射电子或者同时不发射电子，不同的电子发射区域可以通过控制以预定的顺序进行电 子发射，例如顺次发射、间隔发射、交替发射、部分同时发射或者分组组合发射等多种发射方式。
图2是示出本发明的一个实施方式所涉及的微型电子发射单元100的结构示意图。如图2所示，微型电子发射单元100包括基极层101、位于基极层101上的绝缘层102、位于绝缘层102上的栅极层103、贯穿栅极层103与绝缘层102并且到达基极层101的开口105以及位于开口105内且固定于基极层101的电子发射体104。其中，基极层101是微型电子发射单元100的结构基础，提供结构支撑，同时提供电气连通(电连接)；绝缘层102处于基极层101之上，由绝缘材料构成，使栅极层103与基极层101绝缘，同时，由于绝缘层102的支撑作用，在同一个电子发射区域内，在整体上使得栅极层与基极层之间的各处距离相等(也即两者所在的平面平行)，从而使栅极层103与基极层101之间的电场分布均匀；栅极层103处于绝缘层102之上，由金属导电材料构成；开口105穿透栅极层103与绝缘层102；电子发射体104位于开口105中，连接在基极层101上。此外，开口105可以是圆形、方形、多边形、椭圆形等任何可加工形状，优选的为圆形；开口105在栅极层103中的大小(尺寸)与在绝缘层102中的大小可以相同，也可以不同，例如，如图2所示那样，在绝缘层102中的开口比在栅极层103中的开口稍大。此外，电子发射体104位于开口105中，连接在基极层101上，优选的是电子发射体104位于开口的中心，电子发射体104的线性长度方向垂直于基极层101的表面。当栅极层103和基极层101之间通过外部电源V施加电压差(即，场致发射电压)时，栅极层103与基极层101之间产生电场，当电场强度达到一定程度时，例如超过2V/μm，电子发射体104产生场致发射，发射的电子束流E穿过绝缘层102和栅极层103，从开口105发射出去。
此外，电子发射体104为含有“纳米材料”的结构，“纳米材料”是指三维空间中至少有一维处于纳米尺度范围(1～100nm)或由它们作为基本单元构成的材料，包括金属和非金属的纳米粉末、纳米纤维、纳米膜、 纳米体块等，典型的如碳纳米管、氧化锌纳米线等，在本发明中优选纳米材料为单壁碳纳米管和双壁碳纳米管，其直径小于10纳米。
本发明的发明人对专利文献2～4进行研究和分析得知，以图3的(A)和(B)为代表的电子发射单元，通常为面阵列排列，通过纵和横(也可称为经和纬)布置的条带基极层和栅极层(或复杂的多层次栅极层)，对每一个发射单元进行单独控制，每个发射单元的发射电流很小，且应用中没有考虑各组成部分的结构比例，发射电流的品质差。如图3(B)所示的结构，栅极上的开口尺寸远大于纳米材料到栅极的距离，导致边缘部分的纳米材料感受电场大，边缘部分的纳米材料先进行电流发射，但是发射的电流向边缘大角度发散，前向性差，且容易被栅极阻挡吸收，而位于中间的纳米材料本来可以产生前向性较好的发射电流，但是由于感受的电场小，发射电流很小或者基本不发射。以图3(C)为代表的明确用于X射线源的电子发射单元，其栅网平面与纳米材料平面之间是一种大跨度小间距的平行平面结构，由于机械加工精度、安装精度的限制，间距很难做到200μm以下，否则很容易出现两平面不平行导致电场不均匀，或者栅网本身的形变或者受电场力的影响产生的形变会严重影响电场的均匀性，甚至会产生栅网与纳米材料之间的短路。这种电子发射单元由于栅网平面与纳米材料平面之间的距离大，使得场致发射控制电压高，从而增加了控制难度和生产成本。相对于3的(A)、图3的(B)、图3的(C)所示的现有技术的结构，在本发明中，通过微型电子发射单元100的各组成部分的特定结构、比例以及电子发射区域获得更好的电子发射特性和更大的电子发射电流E，同时降低场致发射所需的控制电压V。
图4是示意性地示出本发明的实施方式所涉及的电子源1的前端面剖视图的示意图。如图4所示，同一电子发射区域内的各微型电子发射单元100之间被物理连接(电连接)，例如，具体表现为：各微型电子发射单元100的基极层101为同一物理层，各微型电子发射单元100的栅极层103为同一物理层，各微型电子发射单元100的绝缘层102可以为同一物 理层。“同一物理层”表示的是在空间上处于同一层面，在电气特性上为连通，在结构上为相连的一体。各微型电子发射单元100的绝缘层102也可以是由处于同一空间层面的多个绝缘柱、绝缘块、绝缘条等组成，只要能够实现使栅极层103与基极层101之间绝缘且各处距离相等(即，栅极层103与基极层101平行)即可。此外，不同的电子发射区域之间，具有物理分隔，例如，具体表现为：各电子发射区域的栅极层103是各自分开独立的、或者各电子发射区域的基极层101是各自分开独立的、或者各电子发射区域的栅极层103与基极层101都是各自分开独立的。从而实现同一电子发射区域内的所有微型电子发射单元同时发射电子或者同时不发射电子，不同的电子发射区域可以通过控制进行以预定的独立控制顺序或者组合控制顺序进行电子发射。多个微型电子发射单元100的同时工作可以使得一个电子发射区域的发射电流大于0.8mA。
图5的(A)～(C)是示出本发明的实施方式中的几种以不同方式进行区域分隔的电子源的示意图。如图5的(A)、(B)、(C)所示，不同电子发射区域之间的物理分隔，可以有多种具体的实施方式。例如，图5的(A)示出了电子发射区域11与电子发射区域12具有共同的基极层和绝缘层，但是栅极层是分开的，具有间距d；图5的(B)示出了电子发射区域11与电子发射区域12具有共同的栅极层和绝缘层，但是基极层是分开的，具有间距d；图5的(C)表示了发射区域11与发射区域12的栅极层、绝缘层和基极层都是分开的，具有间距d。
此外，各电子发射区域的形状可以是方形、圆形、长条形、长椭圆形、多边形及其他组合形状等；其中方形是指正方形或者长方形，长条形是指长与宽的比例远大于1(例如10)的情形；一个电子源的各电子发射区域的形状可以相同，也可以不同；各电子发射区域的尺寸大小可以相等，也可以不等；电子发射区域具有毫米级的宏观尺寸，例如0.2mm至40mm。各电子发射区域之间的分隔间距d，可以为微米量级，也可以为宏观的毫米至厘米量级，不同电子发射区域之间的分隔间距d可以相同也可 以不同。一种典型的结构，各电子发射区域为长条形，尺寸为1mm×20mm，大小相等，沿着窄边(1mm)平行、整齐、均匀排列，各相邻电子发射区域的间距d为1mm。
图6是示出本发明的实施方式所涉及的微型电子发射单元的具体结构的示意图。如图6所示，在微型电子发射单元100的结构中，基极层101提供结构支撑，同时提供电气连通，可以是一个金属层，也可以由基底层106和导电层107组成。基底层106用于提供结构支撑，例如提供光洁的表面便于导电层附着，是电子发射区域的结构基础，即导电层107、绝缘层102、栅极层103、电子发射体104等都是以基底层106为基础进行附着、粘结、生长或固定。基底层106可以是金属材料，例如不锈钢，也可以是非金属材料，例如陶瓷等。导电层107用于给同一电子发射区域内的各微型电子发射单元100提供基极电气连接，导电层107由导电性能良好的材料构成，可以是金属，也可以是非金属，例如金、银、铜、钼、碳纳米膜等。
此外，微型电子发射单元100在电子发射区域内的阵列排布方向上的尺寸大小S为微米级，即每个微型电子发射单元100在阵列排布方向上占用的空间尺寸范围为1μm至200μm，典型的如50μm。与阵列排布平面垂直的方向定义为深度，或者称为厚度。基底层106的厚度为宏观的毫米级，例如1mm～10mm，典型的例如4mm，图6中的基底层106只体现了厚度方向上的一部分。导电层107的厚度可以在毫米级，也可以在微米级，与采用的材料有一定关系，为了加工方便和降低成本，推荐的为微米级，例如20μm厚的碳纳米膜。绝缘层102的厚度为微米级，例如5μm至400μm，典型的如100μm。栅极层103的厚度在微米级，推荐的为与绝缘层102具有接近但是稍小的厚度，例如5μm至400μm，典型的如30μm。开口105的尺寸D为微米级，开口105的尺寸小于绝缘层102的厚度，例如5μm至100μm，典型的如30μm。电子发射体104的高度h为微米级，小于绝缘层102厚度的1/2，例如1μm至100μm，典型的如 20μm。电子发射体104与栅极层103的距离H，即电子发射体104的顶部至栅极层103的下沿的距离为微米级，小于绝缘层102的厚度，进一步地明确为小于200μm，典型的例如80μm。
微型电子发射单元100的尺寸S为微米级，开口105的尺寸D为微米级，使得开口105的内部可以布置大量直径小于10纳米的单壁或双壁碳纳米管、多壁碳纳米管、或者它们的组合，保障一定的电流发射能力；开口105的尺寸小于绝缘层102的厚度，也即开口105的形状是一种“深井”形，电子发射体104的顶部感受到的电场分布相对均匀，保障电子发射体104发射的电流具有较好的前向特性；栅极层103的厚度接近但是小于绝缘层102的厚度，一方面使得电子发射体104的顶部的电场相对均匀，另一方面又不对电子发射体104所发射的电子束流E形成明显阻挡。上述各部分的结构尺寸关系，改善了微型电子发射单元100所发射的电子束流E的品质，提高了发射电流强度，增强了前向特性，此外，通过调整控制电压，从而每个微型电子发射单元100的发射能力大于100nA，例如100nA到25μA。
同时，电子发射体104与栅极层103的距离H＜200μm，使得栅极的控制电压小于500V(这是因为，若栅极层与电子发射体之间的电压和栅极层与电子发射体之间的距离的比超过2V/μm，电子发射体就产生场致发射，实际上，电子发射体的纳米材料尖端具有很强的场强增强效应，即纳米材料的尖端感受到的电场可以远大于V/H，V为栅极的控制电压，H为栅极层与电子发射体之间的距离)，典型的H＝80μm，控制电压V＝300V，这使得本发明的电子源控制简单，控制成本低。
此外，微型电子发射单元100的尺寸大小S体现为微米级，按上述推荐的典型尺寸参数，微型电子发射单元100的尺寸S为50μm，一个大小为1mm×20mm的电子发射区域内具有8000个微型电子发射单元100，每个微型电子发射单元100的发射能力为100nA到25μA，电子发射区域的 电流发射能力大于0.8mA，例如0.8mA到200mA。
此外，电子发射体104可以通过生长、印刷、粘结、烧结等手段直接固定在导电层上，或者固定在导电层上特定设计的某些凸起结构上，例如如图7的(A)、(B)、(C)所示。图7(A)是一种纳米材料固定在锥形凸台上的结构示意图，凸台还可以是方形、柱形等，这是现有技术中比较常见的结构；图7的(B)是一种在导电层上布置微型金属杆(或者金属尖端)，在金属杆上固定纳米材料，形成纳米材料树状的结构；图7的(C)是一种导电层本身为纳米材料制成的膜，通过后续处理使得开口位置的纳米膜中的部分纳米材料竖立起来的结构。
图8是示出使用了本发明的实施方式所涉及的电子源的X射线源的结构示意图。在图8中所示的X射线源包括：电子源1；与电子源1相对布置的阳极2；包围电子源1和阳极2的真空盒3；与电子源1连接的电子源控制装置4；与阳极2相连接的高压电源5；穿越真空盒3的盒壁并连接电子源1与电子源控制装置4的第一连接装置41；穿越真空盒3的盒壁并连接阳极2与高压电源5的第二连接装置51。
如前所述那样，电子源1包含至少一个电子发射区域，电子发射区域包含多个微型电子发射单元100，每个微型电子发射单元100在阵列排布方向上占用的空间尺寸范围为微米级，微型电子发射单元100包括基极层101、位于基极层101上的绝缘层102、位于绝缘层103上的栅极层103、贯穿栅极层102与绝缘层102并且达到基极层101的开口105、以及位于开口105内且固定于基极层101的电子发射体104，多个微型电子发射单元100同时发射电子或者同时不发射电子。
此外，电子发射区域的工作状态由与电子源1连接的电子源控制装置4控制。电子源控制装置4将两个不同的电压通过第一连接装置41施加到电子源1的电子发射区域的基极层101和栅极层103，在基极层101和栅 极层103之间建立起电压差为V的场致发射电场，电场强度为V/H(H为电子发射体104和栅极层103之间的距离)，定义栅极层103的电压比基极层101的电压高时，V为正，相反则V为负。当电场的电压V为正，电子发射体104的纳米材料是碳纳米管，且强度V/H大于2V/μm时(由于纳米材料尖端的场强增强效应，纳米材料感受到的实际电场可能远大于V/H的数值)，电子发射区域产生电子发射。当电场的电压为零或者为负时，电子发射区域不产生电子发射。当电压V越高、强度V/H越大时，电子发射的电流强度越大，因此，可以通过调节电子源控制装置4的输出电压V来调节电子源1所发射的电流强度的大小。例如，电子源控制装置4可输出电压幅度可调整范围为0V至500V的电压，当输出电压为0V时，电子源1不发射电子；当输出电压达到一定幅度时，例如200V，电子源1开始发射电子，当输出电压再增加一定幅度时，例如达到300V时，电子源1发射电子的电流强度达到目标值。如果电子源1发射的电流强度低于或高于目标值，通过调高或调低电子源控制装置4的输出电压，使电子源1发射的电流强度回归目标值，现代控制系统很容易实现这种自动式反馈调节。通常，为了使用方便，将电子源1的电子发射区域的基极层101连接到地电位，对栅极层103施加正电压；或者将栅极层103连接到地电位，对基极层101施加负电压。
此外，阳极2用于使自己与电子源1之间建立高压电场，同时接收从电子源1发射并被高压电场加速的电子束流E，产生X射线。阳极2通常也称为靶，其材料通常为高Z的金属材料，称为靶材料，广泛使用的有钨、钼、钯、金、铜等，可以是一种金属，也可以是合金，为降低成本，通常以一种普通金属为基底，在其上通过电镀、溅射、高温压接、焊接、粘接等方式固定一种或多种高Z的靶材料。
阳极2通过第二连接装置51与阳极高压电源5连接。高压电源5产生几十kV至几百kV的高压(例如，40kV至500kV)施加到阳极2与电子源1之间，阳极2相对电子源1为正的电压，例如一种典型的方式是电子 源1的主体连接在地电位，阳极2通过高压电源5被施加正160kV的高压。阳极2与电子源1之间形成高压电场，电子源1发射的电子束流E受到高压电场的加速，沿着电场方向(逆电力线)运动，最终轰击阳极2的靶材料，产生X射线。
此外，真空盒3是四周密封的空腔壳体，包围电子源1和阳极2，壳体主要是绝缘材料，例如玻璃或陶瓷等。真空盒3的壳体也可以是金属材料，例如不锈钢，在真空盒3的壳体为金属材料时，真空盒3的壳体与内部的电子源1和阳极2之间保持足够的距离，一方面不会与电子源1或阳极2之间产生放电打火，另一方面也不会影响电子源1与阳极2之间的电场分布。真空盒3的盒壁上还安装有第一连接装置41，让电气连接的引线穿过真空盒3的盒壁并保持真空盒3的密封特性，通常为陶瓷材料制成的引线端子。真空盒3的盒壁上还安装有第二连接装置51，让电气连接的引线穿过真空盒3的盒壁并保持真空盒的密封特性，通常为陶瓷材料制成的高压引线端子。真空盒3的内部为高真空，真空盒3内的高真空通过在高温排气炉内烘烤排气获得，真空度通常不低于10-3pa，推荐的真空度不低于10-5Pa，真空盒3本身还可以带有离子泵等真空保持装置。
此外，电子源1包含至少两个电子发射区域，例如N个，每个电子发射区域包含多个微型电子发射单元100，如前述那样，微型电子发射单元100包括基极层101、位于基极层101上的绝缘层102、位于绝缘层102上的栅极层103、贯穿栅极层103与绝缘层102并且到达基极层101的开口105和位于开口105内且固定于基极层101的电子发射体104，同一电子发射区域内的微型电子发射单元100之间被物理连接，在不同电子发射区域之间，具有物理分隔。
如前述那样，同一电子发射区域内的微型电子发射单元100之间被物理连接，是指其基极层101为同一层，栅极层103为同一层，绝缘层102可以为同一层。不同的电子发射区域之间具有物理分隔，可以是：(A) 不同电子发射区域的基极层101、绝缘层102为同一层，栅极层103位于同一平面，但是是分隔开的，例如相邻电子发射区域的栅极层103具有间距d。此种情形下，电子源1的基极层101具有一根公共引线通过第一连接装置41连接到电子源控制装置4，每个电子发射区域的栅极层103都有一个独立的引线通过第一连接装置41连接到电子源控制装置4，对于N个电子发射区域，第一连接装置41具有至少N+1根独立引线。进一步地，电子源1的基极层101通过公共引线连接到电子源控制装置4的地电位，电子源控制装置4的多路输出(均输出正电压)通过第一连接装置41分别连接到每一个电子发射区域的栅极层103，从而实现对每一个电子发射区域的独立控制。(B)不同的电子发射区域的栅极层103、绝缘层102为同一层，基极层101位于同一平面，但是是分隔开的，例如相邻电子发射区域的基极层101具有间距d，在基极层101由非导电的基底层106和导电层107构成时，极层101的分隔开可以仅仅是导电层107的分隔开。此种情形下，电子源1的栅极层103具有一根公共引线通过第一连接装置41连接到电子源控制装置4，每个电子发射区域的基极层101都有一个独立的引线通过第一连接装置41连接到电子源控制装置4，对于N个电子发射区域，第一连接装置41具有至少N+1根独立引线。进一步地，电子源1的栅极层103通过公共引线连接到电子源控制装置4的地电位，电子源控制装置4的多路输出(均输出负电压)通过第一连接装置41分别连接到每一个电子发射区域的基极层101，从而实现对每一个电子发射区域的独立控制。(C)不同电子发射区域位于同一平面，但是其栅极层103、绝缘层102、基极层101都是分隔开的，例如相邻电子发射区域具有间距d。此种情形下，每一个电子发射区域分别从基极层101和栅极层103各引出一根引线，通过第一连接装置41连接到电子源控制装置4，对于N个电子发射区域，第一连接装置41具有至少2N根独立引线。电子源控制装置4的多路输出(两根引线为一组，两者之间具有电压差)通过第一连接装置41分别连接到每一个电子发射区域的基极层101和栅极层103，从而实现对每一个电子发射区域的独立控制。
如图8所示，电子源1的N个不同位置的电子发射区域11，12，13……成线性排列，可以在电子源1的不同位置发射电子束流。阳极2与电子源1对应布置，即，如图8所示的那样，阳极2位于电子源1的上方，具有与电子源1相同或相近的形状与尺寸，阳极2的靶材料所处的表面与电子源1的栅极层103的表面相对，保持平行或大致平行的关系。电子发射区域11，12，13……产生的电子束流E分别在阳极2上的不同位置产生N个X射线靶点21，22，23……。在本发明中，将这种在阳极的不同位置产生多个X射线靶点的X射线源称为分布式X射线源。
图9是示出本发明的实施方式所涉及的、阳极具有多种靶材料的分布式X射线源的示意图。如图9所示，分布式X射线源的阳极2至少包含两种不同的靶材料，可以在不同的靶点位置产生综合能量不同的X射线。X射线是一种连续能谱，这里采用“综合能量”的概念来说明各种能量的X射线比例变化所体现出的综合效果。电子源1包含至少两个电子发射区域，每个电子发射区域发射的电子束流在阳极2的不同位置形成X射线靶点，通过在阳极2的不同靶点位置设置不同的靶材料，由于不同材料具有不同的标识谱，因此可以获得综合能量高低不同的X射线。例如，阳极2以钼材料为基底，在阳极2的表面(与电子源1相对的表面)通过离子溅射的方法，在与电子发射区域11，13，15……相对的靶点位置21，23，25……处溅射沉积200μm厚的钨靶材，在与电子发射区域12，14，16……相对的靶点位置22，24，26……处溅射沉积200μm厚的铜靶材，X射线源工作于相同的阳极电压时，各电子发射区域产生的电子束流E的强度和能量相同，但是靶点位置21，23，25……(钨靶材)产生的X射线X1的综合能量高于靶点位置22，24，26……(铜靶材)产生的X射线X2的综合能量。
此外，图10是示出本发明的实施方式所涉及的分布式X射线源的三种工作模式的示意图。如图10所示，使用了本发明的电子源1的分布式X射线源，具有多种工作模式，产生多种有益效果。一种典型的分布式X射 线源的内部结构为：电子源1的多个电子发射区域11，12，13……具有相同的长条形形状，且沿着窄边的方向，在同一个平面内整齐、均匀地线性排列，当电子发射区域的数量很大(例如，几十到上千)时，电子源1的形状也是长条形的，且电子源1的长边方向与电子发射区域的长边方向垂直；对应的阳极2也是长条形，与电子源1上下对齐，平行布置。该分布式X射线源可以有多种工作模式，展现多种有益效果。
第一类工作模式即模式A。N个电子发射区域11，12，13……，各自独立进行电子发射，在阳极2上对应的N个位置分别产生X射线，形成N个靶点。第一种方式：各电子发射区域按其排列位置，顺次产生一定时长T的电子束流发射，即，在电子源控制装置4的控制下：①电子发射区域11发射电子束流，在阳极2的位置21产生X射线发射，经过时间T，停止发射；②电子发射区域12发射电子束流，在阳极2的位置22产生X射线发射，经过时间T，停止发射；③电子发射区域13发射电子束流，在阳极2的位置23产生X射线发射，经过时间T，停止发射；……，依次类推，所有电子发射区域都完成了一次电子发射后，再次从①开始，进行下一个循环。第二种方式：部分间隔的电子发射区域，依次产生一定时长T的电子束流发射，即，在电子源控制装置4的控制下：①电子发射区域11发射电子束流，在阳极2的位置21产生X射线发射，经过时间T，停止发射；②电子发射区域13发射电子束流，在阳极2的位置23产生X射线发射，经过时间T，停止发射；③电子发射区域15发射电子束流，在阳极2的位置25产生X射线发射，经过时间T，停止发射；……，依次类推，直至电子源的末端，然后可以是这一部分电子发射区域再次发射，也可以是另一部分(12，14，16，……)进行发射，并形成循环。第三种方式：部分电子发射区域形成组合，各组合依次产生一定时长T的电子束流发射，即，在电子源控制装置4的控制下：①电子发射区域11、14、17发射电子束流，在阳极2的位置21、24、27分别产生X射线发射，经过时间T，停止发射；②电子发射区域12、15、18发射电子束流，在阳极2的位置22、25、28分别产生X射线发射，经过时间T，停止发射；③电子 发射区域13、16、19发射电子束流，在阳极2的位置23、26、29分别产生X射线发射，经过时间T，停止发射；……，依次类推，直至所有组合完成电子发射，并形成循环。在模式A中，每一个电子发射区域独立控制，并产生与该电子发射区域对应的独立靶点，每个电子发射区域具有较大的宽度，例如2mm，具有较大的发射电流，例如大于1.6mA，相邻电子发射区域的间距较大，例如d＝2mm，对应形成的间距较大(例如，中心距离为2+2＝4mm)、位置清晰的靶点，易于控制和使用。
第二类工作模式即模式B。N个电子发射区域11，12，13……，以相邻的n个进行不重叠的组合，以组进行电子发射，可以在阳极上对应的N/n个位置分别产生X射线，形成N/n个靶点。例如：电子发射区域(11，12，13)形成组①，电子发射区域(14，15，16)形成组②，电子发射区域(17，18，19)形成组③，……。新的N/n＝N/3个组①，②，③……可以按照模式A中的多种方式进行工作。工作模式模式B的优点是，一方面，通过电子发射区域的组合，使得发射电流的强度增加，每个靶点的X射线强度也同步增加，可以按照分布式X射线源的具体用途进行n的设定，获得需要的电子束流发射强度；另一方面，可以将每个电子发射区域的宽度进一步变小，并组合更多数量的电子发射区域为一组，当某个电子发射区域发生故障(如某个微型电子发射单元短路)时，在该组内剔除该电子发射区域，该组仍能正常工作，发射电流表现为降低1/n，这种降低很容易通过调整参数得到弥补，这样整个分布式X射线源仍然具有N/n个靶点，即不会因为某个电子发射区域的故障产生“黑点”(类似于显示器的黑线)。避免“黑点”，一方面确实避免了X射线靶点出现盲点，减少了故障，另一方面如果少数电子发射单元过早“衰老”产生故障，通过避免“黑点”的做法，实际上是延长了分布式X射线源的使用寿命。当然，本模式中组合的数量n可以是固定的，也可以是不固定的数值，如有的3个一组，有的5个一组等，N/n仅仅指示为组的数量和靶点数量是电子发射区域数量N除以某个组合因子n。
第三类工作模式即模式C。N个电子发射区域11，12，13……，以相 邻的n个进行有a个重叠的组合，以组进行电子发射，在阳极上对应的
Figure PCTCN2015087488-appb-000001
个位置分别产生X射线，形成
Figure PCTCN2015087488-appb-000002
个靶点。其中，
Figure PCTCN2015087488-appb-000003
表示对
Figure PCTCN2015087488-appb-000004
的结果取整数。例如：n＝3且a＝2时，电子发射区域(11，12，13)形成组①，电子发射区域(12，13，14)形成组②，电子发射区域(13，14，15)形成组③，……。此时形成N-2个组①，②，③……可以按照模式A中的多种方式进行工作。工作模式模式C的优点，一方面具有模式B所描述的发射电子束流强度增加和不会因为个别电子发射区域故障导致靶点“黑点”的两个优势外，另一方面使得模式C具有比模式B更多的靶点数量，更小的靶点中心间距(相邻靶点与电子发射区域组合对应，是部分重叠的)，这对分布式X射线源的应用也是有利的，由于增加了靶点数量，就增加了视角的数量，可以很大的提高使用该分布式X射线源的成像系统的图像质量。同模式B，因子n和a可以是非固定数值，
Figure PCTCN2015087488-appb-000005
仅仅是指代某种计算方法，表明模式C的靶点数量少于模式A，多于模式B，优点是电子发射电流大于模式A且可以避免“黑点”。
其中，所述N为N≥3的正整数，所述n为N＞n≥2的正整数，所述a为n＞a≥1的正整数。
此外，本发明的X射线源的工作模式不限于上述三种模式，只要是能够使电子源1的电子发射区域以预定的顺序进行电子发射、或者使电子源1的相邻的预定数量的电子发射区域以预定的顺序进行电子发射即可。
此外，上述电子源1的电子发射区域排列方式只是一种示例的特定结构，其排布还可以是不同形状的电子发射区域的排列，还可以是非整齐的排列，还可以是非均匀的排列，还可以是多维度的排列(例如，4×100的整列)，还可以是不在同一个平面上的排列等，都是本发明的电子源1的可实现方式。对应的阳极2具有与电子发射区域的排列方式相匹配的结构和形状。例如，在专利文献CN203377194U、CN203563254U、CN203590580U、CN203537653U等中披露了多种排列方式，在本发明中也能够如上专利文献中所公开的排列方式那样来排列电子发射区域。
图11是示出本发明的实施方式所涉及的电子源为特定结构的分布式X射线源的示意图。如图11所示，当电子源1的电子发射区域具有较大的宏观宽度时，例如2mm至40mm，与电子源1至阳极2的距离具有接近的数量级，例如，电子源1至阳极2的距离与电子发射区域的宽度的比值小于10，电子发射区域的表面在宽度方向(在图11中为左右方向)上为弧形，使得电子发射区域内各微型电子发射单元100发射的电子具有更好的聚焦效果。电子发射区域的表面弧度可以以对应的阳极2上的靶点位置为圆心进行布置，例如电子发射区域11发射的电子束流E在阳极2上形成靶点21，电子发射区域11的表面在宽度方向上(或者说截面)是位于以21的中心为圆心的圆弧上。
图12是示出本发明的实施方式所涉及的带有聚焦装置的分布式X射线源的示意图。如图12所示，分布式X射线源还包括聚焦装置6，聚焦装置6与电子发射区域相对应地布置有多个，位于电子源1与阳极2之间。聚焦装置6可以是例如电极，还可以是能产生磁场的线包等。当聚焦装置6为电极时，可以通过聚焦电缆和连接装置(图中未画出)连接到外部电源(或控制系统，图中未画出)得到预加电压(电势位)，使得各微型发射单元100产生的电子通过聚焦装置6时获得向中心聚集的效果。当聚焦装置6为电极时，也可以是与其他部件绝缘的电极，各微型发射单元100发射电子时，位于发射区域边缘的微型发射单元100产生的电子一部分被聚焦电极截获，形成静电积累，静电场对后续的通过聚焦装置6的电子产生向中心聚集的推力。聚焦装置6为线包时，可以通过聚焦电缆和连接装置(图中未画出)连接到外部电源(或控制系统，图中未画出)，使线包内流过预定的电流并在发射区域上方产生预定强度的聚焦磁场，使得各微型发射单元100产生的电子通过聚焦装置6时获得向中心聚集的效果。在本发明中，聚焦装置的特征在于与每一个电子发射区域一一对应布置，并且在电子发射区域的上方包围该电子发射区域内的所有微型电子发射单元100。在图中未画出的聚焦电缆和连接装置、外部电源(或控制系统)为 现有成熟技术。
图13的(A)～(D)是示出本发明的实施方式所涉及的分布式X射线源的几种准直效果的示意图。如图13所示，分布式X射线源还包括准直装置7，布置在X射线的输出路径上，用于输出锥形、平面扇形、笔形、或多点平行等的X射线。准直装置7可以是安装在分布式X射线源内部的内准直器，也可以是安装在分布式X射线源外部的外准直器。准直装置7的材料通常为高密度金属材料，例如，钨、钼、贫铀、铅、钢等的一种或者几种。准直装置7的形状通常按照分布式X射线源的用途进行设计。为了描述方便，定义坐标系，分布式X射线源的长度方向(靶点排列的方向)为X方向，宽度方向为Y方向，X射线的出射方向为Z方向。如图13的(A)所示，准直装置7设置在分布式X射线源的前方(输出X射线的方向上)，内部具有较大宽度的X射线准直缝，准直缝的长度与分布式X射线源的靶点分布长度接近，该准直装置输出在X方向具有很大角度，在Y方向具有较大角度的锥形X射线束(在图13的(A)中只示出了一个中部位置靶点产生的锥形X射线束)。如图13的(B)所示，准直装置7设置在分布式X射线源的前方，内部的X射线准直缝为非常窄的薄缝，准直缝的长度与分布式X射线源的靶点分布长度接近，该准直装置在X-Z平面内输出扇形X射线束，即Y方向上的厚度非常小(在图13的(B)只示出了一个中部位置靶点产生的扇形X射线束)。如图13的(C)所示，准直装置7设置在分布式X射线源的前方，内部的X射线准直缝是一系列与靶点排列对应排列的具有一定宽度(Y向)的薄缝，准直缝的排列长度与分布式X射线源的靶点分布长度接近，该准直装置输出在Y方向具有一定发散角度、在X方向具有一定厚度的X射线束阵列，在X-Z平面是一种多点平行的X射线束。如图13的(D)所示，准直装置7设置在分布式X射线源的前方，内部的X射线准直缝是一系列与靶点排列对应排列的小型孔洞，准直缝的排列长度与分布式X射线源的靶点分布长度接近，该准直装置在X-Y平面输出X射线斑点束阵列，每一个斑点束都是与Z向同轴的笔形X射线束。图13的(A)、(B)、(C)、 (D)所示的准直装置7都在射线源外部的情形，在X射线的输出路径上对X射线束的形状进行限制；也可以安装在射线源内部，即，安装在阳极2与真空盒3之间，可以靠近阳极2，也可以靠近真空盒3的盒壁进行安装固定，同样都是在X射线的输出路径上对X射线束的形状进行限制。准直装置安装在射线源内部，可以减小尺寸和重量，某些情形下还能获得更优的准直效果。
图14是示出本发明的实施方式所涉及的圆环型的分布式X射线源的示意图。如图14所示，一种分布式X射线源，其靶点的排列形状为圆或者弧线的一段。图14示出了分布式X射线源的形状为圆环的情形，电子源1的多个电子发射区域排列为一个圆周，对应的阳极2也是一个圆周，真空盒3是包围电子源1和阳极2的圆环，圆环的中心为O，产生的X射线指向中心O，或者O所在的轴线。分布式X射线源的形状还可以是椭圆、3/4圆、半圆、1/4圆、其它角度的一段弧线等。
图15是示出本发明的实施方式所涉及的方框型的分布式X射线源的示意图。如图15所示，一种分布式X射线源，其靶点的排列形状为首尾相连的方形、折线段或者一段直线。图15示出了分布式X射线源的形状为方框型的情形，电子源1的多个电子发射区域排列为一个方形，对应的阳极2也是一个方形，真空盒3是包围电子源1和阳极2的方框型，产生的X射线指向方框的内部。分布式X射线源的形状还可以是U型(3/4方框)、L型(半方框)、直线段(1/4方框)、正多边型、其它非直角连接的折线段等。
图16的(A)～(D)是示出本发明的实施方式所涉及的分布式X射线源的几种剖面结构的示意图。如图16所示，分布式X射线源的阳极2上的靶为透射靶，也可以为反射靶。
图16的(A)示出了分布式X射线源的阳极靶为透射靶的情形，即， 输出X射线的方向与入射电子束流E的方向基本相同。结合图14，图16的(A)可以理解为电子源1的多个电子发射区域排列在外圆上，且电子发射区域的表面平行于圆环的轴线，阳极2的多个靶点排列在内圆上，两个圆同心，真空盒3是包围电子源1和阳极2的中空圆环，阳极2的靶点位置具有很薄的厚度，例如小于1mm，电子束流E和X射线的方向均指向圆环的中心O。结合图15，图16的(A)可以理解为电子源1的多个电子发射区域排列在外方形上，且电子发射区域的表面平行于方框的中心线，阳极2的多个靶点排列在内方形上，两个方形的中心重合，真空盒3是包围电子源1和阳极2的中空环状方框，阳极2的靶点位置具有很薄的厚度，例如小于1mm，电子束流E和X射线的方向均指向方框内部。
图16的(B)示出了分布式X射线源的阳极靶为反射靶的情形，即，输出X射线的方向与入射电子束流E的方向构成90度角(此处所说的90度角包括大约90度角)，范围可以是70度至120度，优选的是80度至100度的角。结合图14，图16(B)可以理解为电子源1的多个电子发射区域排列在一个圆上，且电子发射区域的表面垂直于圆环的轴线O，阳极2的多个靶点排列在另一个圆上，两个圆大小相等，圆心都在圆环的轴线上，且两个圆所在的平面平行；或者进一步地，阳极2相对电子源1倾斜一定角度(例如10度)，使得阳极2的多个靶点排列的面为圆锥面，圆锥面的轴线为圆环的轴线。真空盒3是包围电子源1和阳极2的中空圆环，电子束流E的方形平行于轴线，X射线的方向指向圆环的中心O。结合图15，图16的(B)可以理解为电子源1的多个电子发射区域排列在一个方形上，电子发射区域的表面垂直于方框的中心线O，阳极2的多个靶点排列在另一个方形上，两个方形大小相等，所在的平面平行；或者进一步地，阳极2相对电子源1倾斜一定角度(例如10度)，使得阳极2的多个靶点排列的面为方锥面，方锥面的中心线为方框的中心线。真空盒3是包围电子源1和阳极3的中空环状方框，电子束流E的方形平行于方框中心线，X射线的方向指向方框内部。
此外，图16的(C)示出的光源也是透射靶，与图16的(A)相比，只是圆环(或方框)内部的电子源1与阳极2的布置方式不同，由内外圆(或内外方形)变成了前后圆(或前后方形)，电子束流E和X射线的方向平行于圆环的轴线(或方框的中心线)，即，分布式X射线是向圆环的侧面(或者方框的侧面)发射的。
此外，图16的(D)示出的光源也是反射靶，与图16的(B)相比，只是圆环(或方框)内部的电子源1与阳极2的布置方式不同，由前后圆(或前后方形)变成了内外圆(或内外方形)，电子束流E的方向垂直于圆环的轴线(或方框的中心线)，X射线的方向平行于圆环的轴线(或方框的中心线)，即，分布式X射线是向圆环的侧面(或者方框的侧面)发射的。
严格来说，只有图16的(A)与图14和图15是对应的，图16的(B)对图14，图15的结合说明，只是便于对图16的(B)的更好描述。
此外，分布式X射线源的形状还可以是上述弧线段与直线段的结合、螺旋线等，对于现代加工技术来说都是可加工的。
图17是示出本发明的实施方式所涉及的使用了本发明分布式X射线源的透射成像系统的示意图。图17所示的使用了本发明的X射线源的透视成像系统包含：至少一个本发明的X射线源81，用于产生覆盖检测区域的X射线；至少一个探测器82，相对X射线源81，位于检测区域的另一侧，用于接收X射线；以及传送装置84，位于X射线源81与探测器82之间，用于承载受检测对象83，通过检测区域。
具体方案一：X射线源为一个，该X射线源具有一个电子发射区域，形成一个X射线靶点，探测器具有多个，形成线性阵列或者平面阵列(也 可以是平面探测器)，与现有的X射线透视成像系统具有相似的组成结构。该方案结构简单、体积小，成本低，但是本发明的场致发射X射线源具有控制电压低，启动速度快的优点。
具体方案二：X射线源为一个，该X射线源具有两个电子发射区域，两个靶点的靶材料不同，可以交替产生两个不同能量的X射线束，探测器具有多个，形成线性阵列或者平面阵列(也可以是平面探测器)，或者进一步是双能探测器。该方案结构简单、体积小，成本低，同时通过双能成像，增加了检测对象的材料识别能力。
具体方案三：X射线源为一个分布式X射线源，该X射线源具有多个X射线靶点，探测器具有多个，形成线性阵列或者平面阵列(也可以是平面探测器)。多个靶点通过不同角度(位置)对受检测对象进行透视成像，最后可获得具有深度方向上多层次信息的透视图像，该方案相对使用多个普通X射线源的多视角系统，结构简单，体积小，成本低。
具体方案四：X射线源为一个分布式X射线源，该X射线源具有多个X射线靶点，探测器为1个或少数几个，通过“反向”成像原理，获得透视图像。该方案特点是减少了探测器的数量，降低了成本。
具体方案五：X射线源为一个或多个分布式X射线源，探测器为对应的一个或多个阵列，且所有X射线靶点对受检测对象形成环绕，环绕角度超过180度。该方案通过静态X射线源的大环绕角度布置，可获得检测对象的完整3D透视图像，而且检查速度快，效率高。
具体方案六：X射线源为多个分布式X射线源，探测器为对应的多个阵列，沿受检测对象的传送方向布置在多个平面上。特点是可以成倍地提高检查速度，或者在不同平面以不同能量的X射线形成多能3D透视图像，或者是以递进的方式增加检测图像质量，例如第一平面粗略检查找出 可疑区域，第二平面通过不同的参数对可疑区域进行细致检查，获得高分辨率和清晰度的图像。
图18是示出本发明的实施方式所涉及的使用了本发明分布式X射线源的背散射成像系统的示意图。图18所示的使用了本发明的分布式X射线源的背散射成像系统包含：至少一个本发明的分布式X射线源81，用于产生多个笔形X射线束，覆盖检测区域；至少一个探测器82，相对X射线源81，位于检测区域的同一侧，用于接收从受检测对象反射回来的X射线。
具体方案一：还包括传送装置84，用于承载受检测对象83，通过检测区域，完成对受检测对象的整体成像。
具体方案二：还包括运动装置，用于移动分布式X射线源81和探测器82，使检测区域扫过受检测对象，完成对受检测对象的整体成像。
具体方案三：分布式X射线源81和探测器82至少为两组，分布在受检测对象的不同侧面，再通过传送装置使受检测对象移动或者通过运动装置使X射线源运动，实现对检测对象的“无死角”成像。
此外，提供一种X射线检测系统，包含：至少两个本发明的分布式X射线源；与X射线源对应的至少两组探测器；图像综合处理系统。其中至少一组分布式X射线源和探测器对检测对象进行透视成像，至少一组分布式X射线源和探测器对检测对象进行背散射成像，图像综合处理系统对透视图像和背散射图像进行综合处理，获得受检测对象的更多特征信息。
此外，需要特别指出的是，上述透视成像和背散射成像系统可以是普通的地面布置形式，也可以集成在移动设备上，如集成在车辆上，成为可移动的透视成像系统和可移动的背散射成像系统。
此外，需要特别指出的是，上述透视成像和背散射成像系统的检测对象具有广泛的含义，通过增加或不增加辅助部件，可以用于检查小型车辆、货物、行李、包裹、机械部件、工业产品、人员、身体部位等。
此外，提供一种图像实时引导放射治疗设备，包含：放射治疗射线源，用于产生对病人进行放射治疗的射线束；多叶准直器，用于调整放射治疗射线束的形状，与病灶匹配；移动床，用于移动并定位病人，使放射治疗射线束位置与病灶位置对准；至少一个本发明的分布式X射线源，用于产生对病人进行诊断成像的射线束；平板探测器，用于接收诊断成像的射线束；控制系统，根据平板探测器所接收的射线束形成诊断图像，对诊断图像中病灶的位置定位，引导放射治疗的射线束中心与病灶中心对准，引导多叶准直器的治疗射线束形状与病灶形状匹配。其中，分布式X射线源为圆环形或方框形并且侧面输出X射线的分布式X射线源(图16(C)、(D)所示的情形)，分布式X射线源的轴线或中心线与治疗射线源的束流轴线为同一直线，即，诊断射线源与治疗射线源的位置相对病人同向。平板探测器相对诊断射线源位于病人的另一面。可以实现在获得诊断图像的同时，无需旋转放射治疗设备臂架，就可以对病人进行图像引导放射治疗，是一种“实时”的图像引导放射治疗，对于治疗具有生理运动的部位，例如肺、心脏等，“实时”的图像引导放射治疗可以降低照射剂量、减少对正常器官的照射，具有重要意义。而且，本发明的分布式X射线源具有多个靶点，获得的图像不同于普通平面图像，是具有深度信息的“立体”诊断图像，可以进一步提高图像引导治疗中，对治疗射线束的位置引导准确性和定位精度。
如上所述，对本申请发明进行了说明，但是本发明并不限于此，应该理解为，只要在本发明宗旨的范围内的各种组合、各种变更、以及应用了本发明的电子源或者本发明的X射线源的装置、设备、或者系统等都在本发明的保护范围内。
符号说明
1电子源；11，12，13，……电子源上的电子发射区域；
100微型电子发射单元；101基极层；102绝缘层；103栅极层；104电子发射体；105开口；106基底层；107导电层；
2阳极；21，22，23，……阳极上的X射线靶点；
3真空盒；4电子源控制装置；41第一连接装置；5高压电源；51第二连接装置；6聚焦装置；7准直装置；
81X射线源；82探测器；83受检测对象；84传送装置；
S微型电子发射单元的尺寸；D开口的尺寸；H电子发射体至栅极层的距离；h电子发射体的高度；d电子发射区域之间的间距；
V场致发射电压；E电子束流；XX射线；OX射线源中心、中心线或者轴线。

Claims (48)

  1. 一种电子源，其特征在于，
    具有至少两个电子发射区域，每个所述电子发射区域包含多个微型电子发射单元，
    所述微型电子发射单元包括：基极层、位于所述基极层上的绝缘层、位于所述绝缘层上的栅极层、位于所述栅极层上的开口、以及固定于所述基极层上与所述开口位置对应的电子发射体，
    同一个所述电子发射区域内的各所述微型电子发射单元之间被电连接，同时发射电子或者同时不发射电子，
    不同的所述电子发射区域之间被电隔离。
  2. 如权利要求1所述的电子源，其特征在于，
    不同的所述电子发射区域之间被电隔离是指：各所述电子发射区域的所述基极层是各自分开独立的、或者各所述电子发射区域的所述栅极层是各自分开独立的、或者各所述电子发射区域的所述基极层和所述栅极层都是各自分开独立的。
  3. 如权利要求1所述的电子源，其特征在于，
    所述绝缘层的厚度小于200μm。
  4. 如权利要求1所述的电子源，其特征在于，
    所述栅极层与所述基极层平行。
  5. 如权利要求1～4的任一项所述的电子源，其特征在于，
    所述开口的尺寸小于所述绝缘层的厚度。
  6. 如权利要求1～4的任一项所述的电子源，其特征在于，
    所述开口的尺寸小于所述电子发射体到所述栅极层的距离。
  7. 如权利要求1～4的任一项所述的电子源，其特征在于，
    所述电子发射体的高度小于所述绝缘层的厚度的二分之一。
  8. 如权利要求1～4的任一项所述的电子源，其特征在于，
    所述电子发射体含有纳米材料而构成。
  9. 如权利要求8所述的电子源，其特征在于，
    所述纳米材料是单壁碳纳米管、双壁碳纳米管、多壁碳纳米管、或者它们的组合。
  10. 如权利要求1～4的任一项所述的电子源，其特征在于，
    所述基极层由基底层和位于所述基底层上的导电层构成，
    所述电子发射体固定在所述导电层上。
  11. 如权利要求10所述的电子源，其特征在于，所述电子发射体以如下方式构成：所述导电层为纳米材料制成的膜，使所述开口处的纳米膜的部分纳米材料竖立起来并且垂直于所述导电层的表面。
  12. 如权利要求1～4的任一项所述的电子源，其特征在于，
    所述微型电子发射单元在阵列排列方向上所占用的空间尺寸为微米级。
  13. 如权利要求12所述的电子源，其特征在于，
    所述微型电子发射单元在阵列排列方向上所占用的空间尺寸范围为1μm～200μm。
  14. 如权利要求1～4的任一项所述的电子源，其特征在于，
    所述电子发射区域的长度与宽度的比例大于2。
  15. 如权利要求1～4的任一项所述的电子源，其特征在于，
    每个所述电子发射区域的发射电流大于0.8mA。
  16. 一种X射线源，其特征在于，具备：
    真空盒；
    如权利要求1～15的任意一项所述的电子源，配置在所述真空盒内；阳极，与所述电子源相对配置在所述真空盒内；
    电子源控制装置，用于在所述电子源的所述电子发射区域的所述基极层和所述栅极层之间施加电压；以及
    高压电源，与所述阳极连接，用于对所述阳极提供高压。
  17. 如权利要求16所述的X射线源，其特征在于，还具有：
    第一连接装置，安装在所述真空盒的盒壁上，用于连接所述电子源和所述电子源控制装置；以及
    第二连接装置，安装在所述真空盒的盒壁上，用于连接所述阳极和所 述高压电源。
  18. 如权利要求16所述的X射线源，其特征在于，
    所述阳极具有与所述电子源的各所述电子发射区域对应的靶点位置，在所述阳极的不同的靶点位置设置有不同的靶材料。
  19. 如权利要求16所述的X射线源，其特征在于，
    所述电子源控制装置进行控制，使得所述电子源的所述电子发射区域以预定的顺序进行电子发射。
  20. 如权利要求16所述的X射线源，其特征在于，
    所述电子源控制装置进行控制，使得所述电子源的相邻的预定数量的所述电子发射区域以预定的顺序进行电子发射。
  21. 如权利要求16所述的X射线源，其特征在于，
    所述电子发射区域的表面在宽度方向上为弧形，所述电子发射区域内的各所述微型电子发射单元所发射的电子在宽度方向上向一个点聚焦。
  22. 如权利要求16～21的任一项所述的X射线源，其特征在于，
    还具有：多个聚焦装置，分别与多个所述电子发射区域对应地配置在所述电子源与所述阳极之间，
    所述聚焦装置在所述电子发射区域的上方包围该电子发射区域内的所有的所述微型电子发射单元。
  23. 如权利要求22所述的X射线源，其特征在于，
    所述聚焦装置是电极或者线包。
  24. 如权利要求16～21的任一项所述的X射线源，其特征在于，
    还具有：准直装置，配置在所述X射线源的内部或者外部，位于X射线的输出路径上，用于使所输出的X射线成为预定的形状。
  25. 如权利要求16～21的任一项所述的X射线源，其特征在于，
    所述阳极上的靶点排列为圆形或者弧形。
  26. 如权利要求16～21的任一项所述的X射线源，其特征在于，
    所述阳极上的靶点排列为首尾相邻的方形、折线段或者一段直线。
  27. 如权利要求16～21的任一项所述的X射线源，其特征在于，
    所述阳极靶为透射靶，所输出的X射线与来自所述电子源的电子束流为同一方向。
  28. 如权利要求16～21的任一项所述的X射线源，其特征在于，
    所述阳极靶为反射靶，所输出的X射线与来自所述电子源的电子束流成90度角。
  29. 一种透视成像系统，其特征在于，具备：
    如权利要求16～28的任一项所述的X射线源，位于检测区域的一侧，用于产生覆盖所述检测区域的X射线；
    至少一个探测器，位于所述检测区域的与所述X射线源对置的一侧，用于接收来自所述X射线源的X射线；以及
    传送装置，位于所述X射线源和所述探测器之间，用于承载受检测对象并使所述受检测对象通过所述检测区域。
  30. 一种背散射成像系统，其特征在于，具备：
    如权利要求16～28的任一项所述的X射线源，位于检测区域的一侧，用于产生覆盖所述检测区域的X射线；以及
    探测器，位于所述检测区域的与所述X射线源相同的一侧，用于接收从受检测对象反射回来的X射线。
  31. 如权利要求30所述的背散射成像系统，其特征在于，
    具有至少两组所述X射线源和所述探测器的组合，所述至少两组所述X射线源和所述探测器的组合配置在所述受检测对象的不同侧。
  32. 如权利要求30或31所述的背散射成像系统，其特征在于，
    还具备：传送装置，用于承载所述受检测对象并使所述受检测对象通过所述检测区域。
  33. 如权利要求30或31所述的背散射成像系统，其特征在于，
    还具备：运动装置，用于移动所述X射线源和所述探测器，使所述X射线源和所述探测器通过受检测对象所在的区域。
  34. 一种X射线检测系统，其特征在于，具备：
    至少两个如权利要求16～28的任一项所述的X射线源；以及
    与所述X射线源对应的探测器，
    至少一组所述X射线源和所述探测器对受检测对象进行透射成像，
    至少一组所述X射线源和所述探测器对受检测对象进行背散射成像。
  35. 一种实时图像引导放射治疗设备，其特征在于，具备：
    放射治疗射线源，用于产生对病人进行放射治疗的射线束；
    多叶准直器，用于调整放射治疗射线束的形状，使得与病灶匹配；
    移动床，用于移动并定位病人，使放射治疗射线束位置与病灶位置对准；
    至少一个诊断射线源，所述诊断射线源是如权利要求16～28的任一项所述的X射线源，所述诊断射线源用于产生对病人进行诊断成像的射线束；
    平板探测器，用于接收诊断成像的射线束；以及
    控制系统，根据所述平板探测器所接收的射线束形成诊断图像，对所述诊断图像中病灶的位置进行定位，引导放射治疗的射线束中心与病灶中心对准，引导所述多叶准直器的治疗射线束形状与病灶形状匹配，
    所述诊断射线源是形状为圆环形或方框形且侧面输出X射线的分布式X射线源，所述分布式X射线源的轴线或中心线与所述放射治疗射线源的束流轴线为同一直线，即所述诊断射线源与所述放射治疗射线源的位置相对病人同向。
  36. 一种电子源，其特征在于，
    具有电子发射区域，所述电子发射区域包含多个微型电子发射单元，所述微型电子发射单元包括：基极层；位于所述基极层上的绝缘层；位于所述绝缘层上的栅极层；位于所述栅极层上的开口；以及固定于所述基极层上与所述开口位置对应的电子发射体，
    所述电子发射区域内的各所述微型电子发射单元之间被电连接，同时发射电子或者同时不发射电子。
  37. 如权利要求36所述的电子源，其特征在于，
    所述绝缘层的厚度小于200μm。
  38. 如权利要求36所述的电子源，其特征在于，
    所述开口的尺寸小于所述绝缘层的厚度。
  39. 如权利要求36所述的电子源，其特征在于，
    所述开口的尺寸小于所述电子发射体到所述栅极层的距离。
  40. 如权利要求36～39的任一项所述的电子源，其特征在于，
    所述电子发射体的高度小于所述绝缘层的厚度的二分之一。
  41. 如权利要求36～39的任一项所述的电子源，其特征在于，
    所述栅极层与所述基极层平行。
  42. 如权利要求36～39的任一项所述的电子源，其特征在于，
    所述微型电子发射单元在阵列排列方向上所占用的空间尺寸为微米级。
  43. 如权利要求42所述的电子源，其特征在于，
    所述微型电子发射单元在阵列排列方向上所占用的空间尺寸范围为1μm～200μm。
  44. 如权利要求36～39的任一项所述的电子源，其特征在于，
    所述电子发射区域的长度与宽度的比例大于2。
  45. 如权利要求36～39的任一项所述的电子源，其特征在于，
    所述基极层由基底层和位于所述基底层上的导电层构成，
    所述电子发射体固定在所述导电层上。
  46. 如权利要求36～39的任一项所述的电子源，其特征在于，
    所述电子发射区域的发射电流大于0.8mA。
  47. 一种X射线源，其特征在于，具备：
    真空盒；
    如权利要求36～46的任一项所述的电子源，配置在所述真空盒内；
    阳极，与所述电子源相对配置在所述真空盒内；
    电子源控制装置，用于在所述电子源的所述电子发射区域的所述基极层和所述栅极层之间施加电压；以及
    高压电源，与所述阳极连接，用于对所述阳极提供高压。
  48. 一种X射线成像系统，其特征在于，具备：
    如权利要求47所述的X射线源；
    探测器，用于接收所述X射线源产生的X射线；
    控制及图像显示系统。
PCT/CN2015/087488 2014-08-25 2015-08-19 电子源、x射线源、使用了该x射线源的设备 Ceased WO2016029811A1 (zh)

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