WO2016045269A1 - 有机发光二极管阵列基板及其制作方法、显示装置 - Google Patents

有机发光二极管阵列基板及其制作方法、显示装置 Download PDF

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WO2016045269A1
WO2016045269A1 PCT/CN2015/070882 CN2015070882W WO2016045269A1 WO 2016045269 A1 WO2016045269 A1 WO 2016045269A1 CN 2015070882 W CN2015070882 W CN 2015070882W WO 2016045269 A1 WO2016045269 A1 WO 2016045269A1
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Prior art keywords
emitting diode
organic light
light emitting
array substrate
cathode
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English (en)
French (fr)
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张粲
刘利宾
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US14/758,135 priority Critical patent/US9570533B2/en
Priority to EP21174026.1A priority patent/EP3886174B1/en
Priority to EP15729325.9A priority patent/EP3200232B1/en
Publication of WO2016045269A1 publication Critical patent/WO2016045269A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present disclosure relates to the field of organic light emitting diode (OLED) display, and in particular to an organic light emitting diode array substrate, a method for fabricating the same, and a display device.
  • OLED organic light emitting diode
  • transparent display allows viewers to see the background behind the screen through the display screen.
  • This novel display effect broadens the application area of the display and can be applied to mobile phones, notebook computers, display windows, Display devices such as refrigerator doors, car monitors, and billboards.
  • FIG. 1 is a schematic diagram of a pixel structure of a transparent OLED display panel in the prior art.
  • the pixel structure includes: a light emitting region 10 and a transparent region 20 that does not emit light, wherein an opaque thin film transistor (TFT) array and an organic
  • TFT thin film transistor
  • the light emitting diode is disposed in the light emitting region (not shown).
  • the cathode layer 11 is a translucent cathode while being located in the light-emitting region 10 and the transparent region 20 which is not illuminated.
  • a longitudinal metal data line 21 is also disposed in the non-illuminating transparent region 20, and the presence of the metal data line 21 reduces the transmittance of the transparent OLED display panel.
  • the transmittance of the transparent OLED display panel can be improved by reducing the width of the metal data line 21 or by using a transparent metal oxide such as indium tin oxide (ITO) instead of the metal material.
  • ITO indium tin oxide
  • reducing the width of the metal data line or making the data line with the transparent metal oxide causes the resistance of the data line to become large, thereby causing an increase in the IR drop of the OLED display device, which affects the display of the OLED display panel. effect.
  • the present disclosure provides an organic light emitting diode array substrate, a manufacturing method thereof, and a display device to reduce resistance of data lines in a transparent organic light emitting diode array substrate.
  • an organic light emitting diode array substrate including:
  • each The pixel unit includes a first region that emits light and a second region that does not emit light, the first region is provided with an organic light emitting diode, and the second region is provided with a conductive unit in parallel with the data line, the conductive The unit is disposed in the same layer as the cathode of the organic light emitting diode.
  • the data line is connected in parallel with the conductive unit through at least two vias.
  • the OLED array substrate further includes: a separation portion, the cathode and the conductive unit are insulated and insulated by the isolation portion.
  • the isolation portion is a lip shape, and the conductive unit is located in the isolation portion.
  • the height of the partition is higher than the height of the cathode and the conductive unit.
  • a height difference between the isolation portion and the cathode and the conductive unit is in a range of 2 to 5 micrometers.
  • the partition portion has a columnar inverted trapezoidal shape.
  • the conductive unit and the cathode of the organic light emitting diode are made of a translucent metal material.
  • the translucent metal material is one of Ag, Mg, Al or an alloy thereof.
  • the conductive unit and the cathode of the organic light emitting diode have a height of 10-30 nm.
  • the present disclosure also provides a method for fabricating an organic light emitting diode array substrate, including:
  • each of the pixel units includes a first region that emits light and a second region that does not emit light
  • the first region is formed with an organic light emitting diode
  • the second region is formed with a conductive unit connected in parallel with the data line, and the conductive unit is disposed in the same layer as the cathode of the organic light emitting diode.
  • the step of forming a plurality of pixel units includes:
  • the isolation portion isolating the cathode metal layer into two parts, and a portion is used as an organic light emitting diode
  • the cathode is partially connected as a conductive unit, and the conductive unit is connected to the data line through the via.
  • the present disclosure also provides an organic light emitting diode display device including the above organic light emitting diode array substrate.
  • the resistance of the data line can be reduced, thereby reducing the influence of the voltage drop on the organic light emitting diode display device.
  • the cathode layer of the existing entire layer can be insulated and separated, the portion of the light-emitting region of the pixel unit serves as the cathode of the organic light-emitting diode, and the portion of the non-light-emitting region serves as the conductive unit, which is simpler to implement and cost-effective. low.
  • FIG. 1 is a schematic diagram of a pixel structure of a transparent OLED display panel in the prior art
  • FIG. 2 is a top plan view of an OLED array substrate according to an embodiment of the present disclosure
  • FIG. 3 is a top plan view of a pixel unit according to an embodiment of the present disclosure.
  • FIG. 4 is a cross-sectional view of an OLED array substrate according to an embodiment of the present disclosure.
  • FIG. 5 is a cross-sectional view of an OLED array substrate according to another embodiment of the present disclosure.
  • Transparent area 20 that does not emit light
  • Planarization layer 109 Planarization layer 109
  • Pixel definition layer 111 Pixel definition layer 111
  • Second area 140 that does not emit light
  • the embodiment of the present disclosure provides an OLED array substrate, including: a power supply line 150 , a gate line 120 , and a data line 110 . And a plurality of pixel units 100 defined by the gate lines 120 and the data lines 110; each of the pixel units 100 includes: a first region 130 that emits light and a second region 140 that does not emit light, the first region 130 An organic light emitting diode is provided (only the cathode 116 of the organic light emitting diode is shown in the figure).
  • the second region 140 is provided with a conductive unit 117 connected in parallel with the data line 110, and the conductive unit 117 is disposed in the same layer as the cathode 116 of the organic light emitting diode.
  • the power supply line 150 is used to supply power to the anode of the organic light emitting diode.
  • the resistance of the data line 110 can be reduced, thereby reducing the influence of the voltage drop on the organic light emitting diode display device.
  • the pixel unit of the embodiment of the present disclosure may further include a thin film transistor disposed on the hair The first region 130 of the light is emitted, and the thin film transistor is connected to the organic light emitting diode for driving the organic light emitting diode to emit light.
  • the OLED array substrate of the embodiments of the present disclosure may further include a pixel definition layer.
  • the data line 110 and the conductive unit 117 are connected in parallel through at least two vias 112.
  • the cathode 116 and the conductive unit 117 are in the same layer and may be provided in the same material, and are usually made of a metal material.
  • the cathode 116 and the conductive unit 117 may be made of a translucent metal material such that the second region 140 that does not emit light is a translucent region to achieve transparent display.
  • it may be made of one of metals such as Ag, Mg, and Al or an alloy thereof, and the height of the cathode 116 and the conductive unit 117 may be 10 to 30 nanometers (nm).
  • the data line 110 may alternatively be made of a transparent metal oxide material such as ITO or IZO (indium zinc oxide).
  • the data line made of a transparent metal oxide material may be in the same layer as the anode of the organic light emitting diode.
  • the anode is an anode of a multilayer structure including a metal oxide layer and a metal reflective layer
  • the data line may also be formed simultaneously with the metal oxide layer of the anode by one patterning process.
  • the data line can also be made of a metal material.
  • the data line may be formed simultaneously with a source and a drain of the thin film transistor by using one patterning process, that is, the data line is made of the same metal material as the source and drain of the thin film transistor.
  • the data line is in the same layer as the source and drain of the thin film transistor.
  • the OLED array substrate may further include: an isolation portion, and the cathode 116 and the conductive unit 117 may be insulated and insulated by the isolation portion 113.
  • the isolation portion 113 is of a square shape, and the conductive unit 117 is located in the isolation portion 113 and is surrounded by the isolation portion 113.
  • the height of the isolation portion 113 is higher than the height of the cathode 116 and the conductive unit 117, and the height difference between the isolation portion 113 and the cathode 116 and the conductive unit 117 may be 2 to 5 um. Within the scope.
  • the isolation portion 113 may be formed first, and then a cathode metal layer is formed by a process such as an open mask (common layer metal mask), since the height of the cathode metal layer is lower than the isolation portion 113.
  • the height of the metal layer can be insulated by the isolation portion 113, in the pixel
  • the first region 130 of the cell 100 forms the cathode 116 of the organic light emitting diode
  • the second region 140 of the pixel cell 100 forms the conductive unit 117.
  • the partition portion 113 has a columnar inverted trapezoidal shape.
  • a separate process of forming the cathode and the conductive unit may also be performed using a patterning process.
  • FIG. 4 is a cross-sectional view of an OLED array substrate according to an embodiment of the present disclosure.
  • the OLED array substrate includes:
  • An active layer 103 is disposed on the buffer layer 102;
  • a gate insulating layer 104 overlying the active layer 103;
  • a gate electrode 105 is disposed on the gate insulating layer 104;
  • a source drain 107 disposed on the interlayer insulating layer 106;
  • planarization layer 109 overlying the passivation layer 108;
  • the pixel defining layer 111 is disposed on the data line 110, and the pixel defining layer 111 is provided with at least two via holes 112;
  • the isolation portion 113 is disposed on the pixel defining layer 111, and the isolation portion 113 is of a square shape and has a columnar inverted trapezoidal cross section;
  • An anode 114 is disposed on the planarization layer 109 and disposed in the same layer as the data line 110;
  • An organic layer 115 is disposed on the anode 114;
  • the conductive unit 117 is disposed on the same layer as the cathode 116 and disposed on the pixel defining layer 111.
  • the cathode 116 and the conductive unit 117 are insulated and separated by the isolation portion 113.
  • the conductive unit 117 passes through the pixel defining layer 111.
  • the via 112 is connected in parallel with the data line 110.
  • the active layer 103, the gate insulating layer 104, the gate electrode 105, the interlayer insulating layer 106, and the source and drain electrodes 107 constitute a thin film transistor of a pixel unit.
  • the anode 114, the organic layer 115, and the cathode 116 constitute an organic light emitting diode of the pixel unit.
  • FIG. 5 is a cross-sectional view of an OLED array substrate according to another embodiment of the present disclosure, where the OLED array substrate includes:
  • An active layer 103 is disposed on the buffer layer 102;
  • a gate insulating layer 104 overlying the active layer 103;
  • a gate electrode 105 is disposed on the gate insulating layer 104;
  • a source drain 107 disposed on the interlayer insulating layer 106;
  • the data line 110 is disposed on the interlayer insulating layer 106, and is disposed in the same material as the source drain and the 107;
  • a passivation layer 108 overlying the source and drain electrodes 107 and the data line 110;
  • planarization layer 109 overlying the passivation layer 108;
  • a pixel defining layer 111 disposed on the planarization layer 109;
  • the isolation portion 113 is disposed on the pixel defining layer, and the isolation portion 113 is of a square shape and has a columnar inverted trapezoidal cross section;
  • An anode 114 is disposed on the planarization layer 109;
  • An organic layer 115 is disposed on the anode 114;
  • the conductive unit 117 is disposed on the same layer as the cathode 116, and is disposed on the pixel defining layer 111.
  • the cathode 116 and the conductive unit 117 are insulated and separated by the isolation portion 113.
  • the conductive unit 117 passes through the pixel defining layer 111.
  • the vias 112 of the planarization layer 109 and the passivation layer 108 are connected in parallel with the data line 110.
  • the active layer 103, the gate insulating layer 104, the gate electrode 105, the interlayer insulating layer 106, and the source and drain electrodes 107 constitute a thin film transistor of a pixel unit.
  • the anode 114, the organic layer 115, and the cathode 116 constitute an organic light emitting diode of the pixel unit.
  • the thin film transistors are all top-gate structures.
  • the thin film transistors may also be bottom-gate structures.
  • An embodiment of the present disclosure further provides an organic light emitting diode display device, including the organic light emitting diode array substrate in any of the above embodiments.
  • the embodiment of the present disclosure further provides a method for fabricating an organic light emitting diode array substrate, including:
  • each of the pixel units includes a first region that emits light and a second region that does not emit light
  • the first region is formed with an organic light emitting diode
  • the second region is formed with a conductive unit connected in parallel with the data line, and the conductive unit is disposed in the same layer as the cathode of the organic light emitting diode.
  • the resistance of the data line can be reduced, thereby reducing the influence of the voltage drop on the organic light emitting diode display device.
  • the step of forming a plurality of pixel units includes:
  • the isolation portion isolating the cathode metal layer into two parts, a portion serving as a cathode of the organic light emitting diode, and a portion serving as a conductive unit
  • the conductive unit is connected to the data line through the via.
  • a part of the existing cathode layer is used to reduce the resistance of the data line, which is simpler to implement and lower in cost.
  • the step of forming a plurality of pixel units comprises:
  • the data line may be made of a transparent metal oxide material.
  • the step of forming a plurality of pixel units comprises:
  • S25 forming a pixel defining layer and a spacer, and forming at least two via holes penetrating the pixel defining layer, the planarizing layer, and the passivation layer at positions corresponding to the data lines;
  • the data line is made of the same metal material as the source and drain of the thin film transistor.

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Abstract

一种有机发光二极管阵列基板及其制作方法、显示装置，该有机发光二极管阵列基板包括：栅线（120）和数据线（110），以及由栅线和数据线限定的多个像素单元（100），每个像素单元包括发光的第一区域（130）和不发光的第二区域（140），第一区域设置有有机发光二极管，第二区域设置有与数据线并联的导电单元（117），所述导电单元与所述有机发光二极管的阴极（116）同层设置。

Description

有机发光二极管阵列基板及其制作方法、显示装置
相关申请的交叉引用
本申请主张在2014年9月23日在中国提交的中国专利申请号No.201410491588.5的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及有机发光二极管(OLED)显示领域，尤其涉及一种有机发光二极管阵列基板及其制作方法、显示装置。
背景技术
透明显示作为一种全新的显示技术，可以让观察者透过显示屏幕看到屏幕后方的背景，这种新颖的显示效果拓宽了显示器的应用领域，可以被应用于手机、笔记本电脑、展示橱窗、冰箱门、车载显示器及广告牌等显示装置上。
请参考图1，图1为现有技术中的透明OLED显示面板的像素结构示意图，该像素结构包括：发光区域10和不发光的透明区域20，其中，不透明的薄膜晶体管(TFT)阵列和有机发光二极管设置于发光区域中(未示出)。阴极层11为半透明阴极，同时位于发光区域10和不发光的透明区域20。在不发光的透明区域20中还设置有纵向的金属数据线(data line)21，金属数据线21的存在降低了透明OLED显示面板的透过率。为解决该问题，可通过减小金属数据线21的宽度，或者采用透明金属氧化物(如氧化铟锡(ITO))替代金属材料制作数据线，以提升透明OLED显示面板的透过率。然而，减小金属数据线的宽度，或者采用透明金属氧化物制作数据线，均会造成数据线的电阻变大，从而造成OLED显示器件的压降(IR drop)增加，影响OLED显示面板的显示效果。
发明内容
有鉴于此，本公开提供一种有机发光二极管阵列基板及其制作方法、显示装置，以降低透明有机发光二极管阵列基板中数据线的电阻。
为解决上述技术问题，本公开提供一种有机发光二极管阵列基板，包括：
栅线和数据线，以及由所述栅线和所述数据线限定的多个像素单元，每 个所述像素单元包括发光的第一区域和不发光的第二区域，所述第一区域设置有有机发光二极管，所述第二区域设置有与所述数据线并联的导电单元，所述导电单元与所述有机发光二极管的阴极同层设置。
可选地，所述数据线与所述导电单元通过至少两个过孔并联。
可选地，所述有机发光二极管阵列基板还包括：隔离部，所述阴极和所述导电单元通过所述隔离部绝缘隔离。
可选地，所述隔离部为口字型，所述导电单元位于所述隔离部之中。
可选地，所述隔离部的高度高于所述阴极和所述导电单元的高度。
可选地，所述隔离部与所述阴极及所述导电单元的高度差位于2～5微米范围内。
可选地，所述隔离部的截面为柱状倒梯形。
可选地，所述导电单元与所述有机发光二极管的阴极采用半透明金属材料制成。
可选地，所述半透明金属材料为Ag、Mg、Al中的一种或其合金。
可选地，所述导电单元与所述有机发光二极管的阴极的高度为10-30纳米。
本公开还提供一种有机发光二极管阵列基板的制作方法，包括：
形成栅线和数据线，以及由所述栅线和所述数据线限定的多个像素单元的步骤，其中，每个所述像素单元包括发光的第一区域和不发光的第二区域，所述第一区域形成有有机发光二极管，所述第二区域形成有与所述数据线并联的导电单元，所述导电单元与所述有机发光二极管的阴极同层设置。
可选地，所述形成多个像素单元的步骤包括：
提供一衬底；
在所述衬底上形成有机发光二极管的阳极和像素定义层，并在对应数据线的位置形成贯通所述像素定义层的过孔；
在所述阳极上形成有机发光二极管的有机层；
在所述像素定义层上形成隔离部；
形成一层阴极金属层，所述阴极金属层的高度低于所述隔离部的高度，所述隔离部将所述阴极金属层隔离成两部分，一部分作为有机发光二极管的 阴极，一部分作为导电单元，所述导电单元通过所述过孔与所述数据线连接。
本公开还提供一种有机发光二极管显示装置，包括上述有机发光二极管阵列基板。
本公开的上述技术方案的有益效果如下：
通过设置于像素单元的不发光区域的导电单元与数据线并联，可以降低数据线的电阻，从而降低压降对有机发光二极管显示装置的影响。
此外，可以通过将现有的整层设置的阴极层绝缘隔开，位于像素单元的发光区域的部分作为有机发光二极管的阴极，位于不发光区域的部分作为导电单元，实现起来较为简单，成本较低。
附图说明
图1为现有技术中的透明OLED显示面板的像素结构示意图；
图2为本公开一实施例的OLED阵列基板的俯视图；
图3为本公开一实施例的像素单元的俯视放大图；
图4为本公开一实施例的OLED阵列基板的剖面图；
图5为本公开另一实施例的OLED阵列基板的剖面图。
附图标记：
图1：
发光区域10
不发光的透明区域20
数据线21
阴极层11
图2-图5：
衬底101
缓冲层102
有源层103
栅绝缘层104
栅极105
层间绝缘层106
源漏极107
钝化层108
平坦化层109
数据线110
像素定义层111
过孔112
隔离部113
阳极114
有机层115
阴极层的第一部分116
导电单元117
栅线120
发射光的第一区域130
不发光的第二区域140
供电线150
具体实施方式
为使本公开要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
为解决现有的透明OLED阵列基板中数据线的电阻大的问题，请参考图2和图3，本公开实施例提供一种OLED阵列基板，包括：供电线150、栅线120和数据线110，以及由所述栅线120和数据线110限定的多个像素单元100；每一所述像素单元100包括：发光的第一区域130和不发光的第二区域140，所述第一区域130设置有有机发光二极管(图中仅示出有机发光二极管的阴极116)。所述第二区域140设置有与所述数据线110并联的导电单元117，所述导电单元117与所述有机发光二极管的阴极116同层设置。其中，供电线150用于为有机发光二极管的阳极供电。
本公开实施例中，通过设置于像素单元100的不发光区域的导电单元117与数据线110并联，可以降低数据线110的电阻，从而降低压降对有机发光二极管显示装置的影响。
本公开实施例的像素单元还可以包括薄膜晶体管，薄膜晶体管设置于发 射光的第一区域130，薄膜晶体管与有机发光二极管连接，用于驱动有机发光二极管发光。
此外，本公开实施例的OLED阵列基板还可以包括像素定义层。
本实施例中，可选地，所述数据线110与所述导电单元117通过至少两个过孔112并联。
所述阴极116和导电单元117同层且可以同材料设置，通常采用金属材料制成。可选地，所述阴极116和导电单元117可以采用半透明金属材料制成，使得不发光的第二区域140为半透明区域，以实现透明显示。具体可以采用Ag，Mg，Al等金属中的一种或其合金制成，所述阴极116和导电单元117的高度可以为10-30纳米(nm)。
为提高透明OLED阵列基板的透过率，可选地，所述数据线110可以采用透明金属氧化物材料制成，如ITO或IZO(氧化铟锌)等。透明金属氧化物材料制成的数据线可以与所述有机发光二极管的阳极位于同一层。当所述阳极为包括金属氧化物层和金属反射层的多层结构的阳极时，所述数据线还可以与阳极的金属氧化物层通过一次构图工艺同时形成。
另外，所述数据线也可以采用金属材料制成。可选地，所述数据线可以与所述薄膜晶体管的源漏极采用一次构图工艺同时形成，即数据线与采用与所述薄膜晶体管的源漏极相同的金属材料制成，此时，所述数据线与所述薄膜晶体管的源漏极位于同一层。
本公开实施例中，所述有机发光二极管阵列基板还可以包括：隔离部，所述阴极116和所述导电单元117可以通过所述隔离部113绝缘隔离。
可选地，如图2和图3所示所述隔离部113为口字型，所述导电单元117位于所述隔离部113之中，被所述隔离部113围住。
可选地，所述隔离部113的高度高于所述阴极116和所述导电单元117的高度，所述隔离部113与所述阴极116及所述导电单元117的高度差可以位于2～5um范围内。
本公开实施例中，可以先形成隔离部113，然后再采用open mask(共同层金属掩膜板)等工艺形成一层阴极金属层，由于所述阴极金属层的高度低于所述隔离部113的高度，所述金属层能够被隔离部113绝缘隔开，在像素 单元100的第一区域130形成有机发光二极管的阴极116，在像素单元100的第二区域140形成导电单元117。可选地，所述隔离部113的截面为柱状倒梯形。
由于利用现有的阴极层的一部分用以减小数据线110的电阻，实现起来较为简单，成本较低。
当然，本公开的其他实施例中，也可以采用构图工艺形成隔离分开的阴极及所述导电单元。
请参考图4，图4为本公开一实施例的OLED阵列基板的剖面图，所述OLED阵列基板包括：
衬底101；
缓冲层102，覆盖于所述衬底101之上；
有源层103，设置于所述缓冲层102之上；
栅绝缘层104，覆盖于所述有源层103之上；
栅极105，设置于所述栅绝缘层104之上；
层间绝缘层106，覆盖于所述栅极105之上；
源漏极107，设置于所述层间绝缘层106之上；
钝化层108，覆盖于所述源漏极107之上；
平坦化层109，覆盖于所述钝化层108之上；
数据线110，设置于所述平坦化层109之上；
像素定义层111，设置于所述数据线110之上，所述像素定义层111上开设有至少两个过孔112；
隔离部113，设置于所述像素定义层111之上，隔离部113为口字型，截面为柱状倒梯形；
阳极114，设置于所述平坦化层109之上，与所述数据线110同层设置；
有机层115，设置于所述阳极114之上；
阴极116，设置于所述有机层115之上；
导电单元117，与所述阴极116同层同材料设置，设置于所述像素定义层111之上，阴极116和导电单元117通过隔离部113绝缘隔开，导电单元117通过贯通像素定义层111的过孔112与所述数据线110并联。
其中，有源层103、栅绝缘层104、栅极105、层间绝缘层106及源漏极107构成像素单元的薄膜晶体管。阳极114、有机层115和阴极116构成像素单元的有机发光二极管。
请参考图5，图5为本公开另一实施例的OLED阵列基板的剖面图，所述OLED阵列基板包括：
衬底101；
缓冲层102，覆盖于所述衬底101之上；
有源层103，设置于所述缓冲层102之上；
栅绝缘层104，覆盖于所述有源层103之上；
栅极105，设置于所述栅绝缘层104之上；
层间绝缘层106，覆盖于所述栅极105之上；
源漏极107，设置于所述层间绝缘层106之上；
数据线110，设置于所述层间绝缘层106之上，与所述源漏及107同层同材料设置；
钝化层108，覆盖于所述源漏极107和所述数据线110之上；
平坦化层109，覆盖于所述钝化层108之上；
像素定义层111，设置于所述平坦化层109之上；
隔离部113，设置于所述像素定义层之上，隔离部113为口字型，截面为柱状倒梯形；
阳极114，设置于所述平坦化层109之上；
有机层115，设置于所述阳极114之上；
阴极116，设置于所述有机层115之上；
导电单元117，与所述阴极116同层同材料设置，设置于所述像素定义层111之上，阴极116和导电单元117通过隔离部113绝缘隔开，导电单元117通过贯通像素定义层111、平坦化层109、钝化层108的过孔112与所述数据线110并联。
其中，有源层103、栅绝缘层104、栅极105、层间绝缘层106及源漏极107构成像素单元的薄膜晶体管。阳极114、有机层115和阴极116构成像素单元的有机发光二极管。
上述两实施例中，薄膜晶体管均为顶栅结构，当然，在本公开的其他实施例中，薄膜晶体管还可以为底栅结构。
本公开实施例还提供一种有机发光二极管显示装置，包括上述任一实施例中的有机发光二极管阵列基板。
本公开实施例还提供一种有机发光二极管阵列基板的制作方法，包括：
形成栅线和数据线，以及由所述栅线和所述数据线限定的多个像素单元的步骤，其中，每个所述像素单元包括发光的第一区域和不发光的第二区域，所述第一区域形成有有机发光二极管，所述第二区域形成有与所述数据线并联的导电单元，所述导电单元与所述有机发光二极管的阴极同层设置。
本公开实施例中，通过设置于像素单元的不发光区域的导电单元与数据线并联，可以降低数据线的电阻，从而降低压降对有机发光二极管显示装置的影响。
可选地，所述形成多个像素单元的步骤包括：
提供一衬底；
在所述衬底上形成有机发光二极管的阳极和像素定义层，并在对应数据线的位置形成贯通所述像素定义层的过孔；
在所述阳极上形成有机发光二极管的有机层；
在所述像素定义层上形成隔离部；
形成一层阴极金属层，所述阴极金属层的高度低于所述隔离部的高度，所述隔离部将所述阴极金属层隔离成两部分，一部分作为有机发光二极管的阴极，一部分作为导电单元，所述导电单元通过所述过孔与所述数据线连接。
本公开实施例中，利用现有的阴极层的一部分用以减小数据线的电阻，实现起来较为简单，成本较低。
在一具体实施例中，所述形成多个像素单元的步骤包括：
S11：提供一衬底；
S12：在所述衬底上形成薄膜晶体管；
S13：在形成有所述薄膜晶体管的衬底上形成数据线和有机发光二极管的阳极；
S14：形成像素定义层和隔离部，并在对应数据线的位置形成至少两个贯 通所述像素定义层的过孔；
S15：在所述阳极的上方形成所述有机发光二极管的有机层；
S16：形成阴极金属层，所述阴极金属层被所述隔离部隔离成两部分，一部分作为所述有机发光二极管的阴极，一部分通过所述过孔与所述数据线并联。
本实施例中，所述数据线可以采用透明金属氧化物材料制成。
在另一具体实施例中，所述形成多个像素单元的步骤包括：
S21：提供一衬底；
S22：在所述衬底上形成薄膜晶体管和数据线，所述数据线与所述薄膜晶体管的源漏极通过一次构图工艺形成；
S23：形成覆盖所述薄膜晶体管和所述数据线的钝化层和平坦化层；
S24：形成有机发光二极管的阳极；
S25：形成像素定义层和隔离部，并在对应数据线的位置形成至少两个贯通所述像素定义层、所述平坦化层及所述钝化层的过孔；
S26：在所述阳极的上方形成所述有机发光二极管的有机层；
S27：形成阴极金属层，所述阴极金属层被所述隔离部隔离成两部分，一部分作为所述有机发光二极管的阴极，一部分通过所述过孔与所述数据线并联。
本实施例中，所述数据线采用与所述薄膜晶体管的源漏极相同的金属材料制成。
以上所述是本公开的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本公开的保护范围。

Claims (13)

  1. 一种有机发光二极管阵列基板，包括：栅线和数据线，以及由所述栅线和所述数据线限定的多个像素单元，每个所述像素单元包括发光的第一区域和不发光的第二区域，所述第一区域设置有有机发光二极管，其中，所述第二区域设置有与所述数据线并联的导电单元，所述导电单元与所述有机发光二极管的阴极同层设置。
  2. 根据权利要求1的所述有机发光二极管阵列基板，其中，所述数据线与所述导电单元通过至少两个过孔并联。
  3. 根据权利要求1的所述有机发光二极管阵列基板，还包括：隔离部，所述阴极和所述导电单元通过所述隔离部绝缘隔离。
  4. 根据权利要求3的所述有机发光二极管阵列基板，其中，所述隔离部为口字型，所述导电单元位于所述隔离部之中。
  5. 根据权利要求3的所述有机发光二极管阵列基板，其中，所述隔离部的高度高于所述阴极和所述导电单元的高度。
  6. 根据权利要求5的所述有机发光二极管阵列基板，其中，所述隔离部与所述阴极及所述导电单元的高度差位于2～5微米范围内。
  7. 根据权利要求5的所述有机发光二极管阵列基板，其中，所述隔离部的截面为柱状倒梯形。
  8. 根据权利要求1的所述有机发光二极管阵列基板，其中，所述导电单元与所述有机发光二极管的阴极采用半透明金属材料制成。
  9. 根据权利要求8的所述有机发光二极管阵列基板，其中，所述半透明金属材料为Ag、Mg、Al中的一种或其合金。
  10. 根据权利要求1的所述有机发光二极管阵列基板，其中，所述导电单元与所述有机发光二极管的阴极的高度为10-30纳米。
  11. 一种有机发光二极管阵列基板的制作方法，包括：
    形成栅线和数据线，以及由所述栅线和所述数据线限定的多个像素单元的步骤，其中，每个所述像素单元包括发光的第一区域和不发光的第二区域，所述第一区域形成有有机发光二极管，所述第二区域形成有与所述数据线并 联的导电单元，所述导电单元与所述有机发光二极管的阴极同层设置。
  12. 根据权利要求11所述的有机发光二极管阵列基板的制作方法，其中，所述形成多个像素单元的步骤包括：
    提供一衬底；
    在所述衬底上形成有机发光二极管的阳极和像素定义层，并在对应数据线的位置形成贯通所述像素定义层的过孔；
    在所述阳极上形成有机发光二极管的有机层；
    在所述像素定义层上形成隔离部；
    形成一层阴极金属层，所述阴极金属层的高度低于所述隔离部的高度，所述隔离部将所述阴极金属层隔离成两部分，一部分作为有机发光二极管的阴极，一部分作为导电单元，所述导电单元通过所述过孔与所述数据线连接。
  13. 一种有机发光二极管显示装置，其中，包括如权利要求1-10任一项所述的有机发光二极管阵列基板。
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