WO2016061949A1 - 阵列基板及其制备方法、柔性显示面板和显示装置 - Google Patents

阵列基板及其制备方法、柔性显示面板和显示装置 Download PDF

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Publication number
WO2016061949A1
WO2016061949A1 PCT/CN2015/072541 CN2015072541W WO2016061949A1 WO 2016061949 A1 WO2016061949 A1 WO 2016061949A1 CN 2015072541 W CN2015072541 W CN 2015072541W WO 2016061949 A1 WO2016061949 A1 WO 2016061949A1
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film layer
flexible
substrate
peripheral region
protective film
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English (en)
French (fr)
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高涛
周伟峰
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US14/770,358 priority Critical patent/US9666833B2/en
Priority to EP15750228.7A priority patent/EP3211674B1/en
Priority to MX2015017978A priority patent/MX355573B/es
Priority to JP2017541151A priority patent/JP6679601B2/ja
Priority to BR112015032768-0A priority patent/BR112015032768B1/pt
Priority to KR1020157024525A priority patent/KR101754511B1/ko
Priority to RU2015156326A priority patent/RU2671935C1/ru
Publication of WO2016061949A1 publication Critical patent/WO2016061949A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • Embodiments of the present invention relate to an array substrate and a method of fabricating the same, a flexible display panel, and a display device.
  • Flexible display is an important development direction of display technology. It has the characteristics of being flexible, non-fragile, ultra-light, ultra-thin, low-power and portable. It has a wide range in the fields of e-books, mobile communications, notebooks, television, and public information. Application prospects and good development expectations.
  • the flexible substrate In the preparation of the flexible array substrate required for the flexible display device, the flexible substrate is usually attached to the rigid carrier substrate, the display device is prepared on the flexible substrate, and finally the flexible substrate is separated from the carrier substrate by mechanical or laser irradiation.
  • the flexible substrate can be divided into a display area and a peripheral area surrounding the display area.
  • the peripheral area of the flexible substrate is formed with an integrated circuit (IC), a flexible printed circuit board (FPC) interface, and a connection integrated circuit.
  • IC integrated circuit
  • FPC flexible printed circuit board
  • connection integrated circuit The components and the wiring of the flexible circuit board.
  • 1 is a schematic view showing a deformation of a flexible substrate in an ideal case.
  • the flexible substrate 1 is formed with an integrated circuit element 2 and an anisotropic conductive paste 3 for connecting the integrated circuit element 2 and the flexible substrate 1.
  • FIG. 2 is a schematic view showing stress deformation of the flexible substrate after being peeled off from the carrier substrate.
  • the connection point between the integrated circuit component 2 and the flexible substrate 1 is cracked, and some of the anisotropic conductive adhesives 3 fail.
  • the cause of the defect shown in FIG. 2 includes: the number of layers in the peripheral region is much smaller than the number of layers in the display region, and the hard component of the integrated circuit component or various wires affects the stress distribution, and thus the flexible substrate and When the carrier substrate is separated, the flexible substrate instantaneously releases the stress unevenly, which is easy to cause the line breakage in the peripheral area and reduce the product yield.
  • an array substrate includes a flexible substrate divided into a display area and a peripheral area, the peripheral area surrounding the display area.
  • the array substrate further includes: an array layer and a first film layer sequentially formed on the flexible substrate of the display region; a plurality of integrated circuit components and a flexible layer formed on the flexible substrate of the peripheral region Circuit board interface; formed in a boundary between the peripheral region and the first film layer, and a flexible protective film layer formed on the flexible substrate except the interface between the integrated circuit component and the flexible circuit board.
  • the material of the flexible protective film layer is an epoxy resin adhesive, a silicone adhesive or an ultraviolet light curing adhesive.
  • the viscosity of the flexible protective film layer ranges from 40 to 50 Pa ⁇ s
  • the shear strength of the flexible protective film layer after curing is 25 to 35 MPa
  • the peeling strength of the flexible protective film layer after curing is 9 to 12KN/m.
  • the flexible protective film layer has a thickness of 5 to 15 ⁇ m.
  • the first film layer is a barrier film layer
  • the barrier film layer is a polyethylene naphthalide film or a polyethylene terephthalate film doped with silicon-rich silicon nitride or silicon oxide.
  • the array substrate further includes: an organic electroluminescent film layer disposed between the array layer and the barrier film layer.
  • the first film layer is an electronic ink display film layer.
  • a flexible display panel includes the array substrate as described above.
  • a display device includes a display panel as described above.
  • a method of fabricating an array substrate includes: providing a flexible substrate, the flexible substrate is divided into a display area and a peripheral area, the peripheral area surrounding the display area; forming an array layer and a first on the flexible substrate of the display area a plurality of integrated circuit components and a flexible wiring board interface formed on the flexible substrate of the peripheral region; at a boundary between the peripheral region and the package barrier film, and the peripheral region except the integrated circuit
  • a flexible protective film layer is formed on the flexible substrate other than the component and the flexible circuit board interface.
  • a flexible protective film layer on the flexible substrate at the interface between the peripheral region and the package barrier film, and the peripheral region except the integrated circuit component and the flexible circuit board interface including: Coating an epoxy resin-based binder material on the flexible substrate at the boundary between the peripheral region and the package barrier film, and the peripheral region except the integrated circuit component and the flexible circuit board interface Or a silicone-based binder material, which is cured at room temperature to form the flexible protective film layer; or, at the boundary between the peripheral region and the package barrier film, and the peripheral region except the integrated electricity
  • the flexible substrate is coated on the flexible substrate other than the circuit component and the flexible circuit board interface, and the flexible protective film layer is formed by ultraviolet light curing.
  • the viscosity of the flexible protective film layer ranges from 40 to 50 Pa ⁇ s
  • the shear strength of the flexible protective film layer after curing is 25 to 35 MPa
  • the peeling strength of the flexible protective film layer after curing is 9 to 12KN/m.
  • the flexible protective film layer has a thickness of 5 to 15 ⁇ m.
  • the first film layer is a barrier film layer
  • the barrier film layer is a polyethylene naphthalide film or a polyethylene terephthalate film doped with silicon-rich silicon nitride or silicon oxide.
  • the preparation method further includes forming an organic electroluminescent film layer between the array layer and the barrier film layer.
  • the first film layer is an electronic ink display film layer.
  • Figure 1 is a schematic view showing the flexible substrate without deformation in an ideal case
  • FIG. 2 is a schematic view showing stress deformation of a flexible substrate after being peeled off from a carrier substrate
  • FIG. 3 is a schematic top plan view of an array substrate according to an embodiment of the present invention.
  • FIG. 4 is a schematic view of a flexible substrate including a display area and a peripheral area;
  • FIG. 5 is a flowchart of a method for preparing an array substrate according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of a boundary between a peripheral region and a first film layer in an embodiment of the present invention.
  • an embodiment of the present invention provides an array substrate including a flexible substrate 1 divided into a display area 11 and a peripheral area 12 , and a peripheral area 12 surrounds the display area 11 .
  • the array substrate further includes:
  • An array layer (not shown) and a first film layer 4 formed on the flexible substrate 1 of the display region 11 in sequence; a plurality of integrated circuit elements 2 and a flexible circuit board interface 5 formed on the flexible substrate 1 of the peripheral region 12;
  • a flexible protective film layer 6 is formed at the boundary of the peripheral region 12 and the first film layer 4, and on the flexible substrate 1 of the peripheral region 12 except the integrated circuit component 2 and the flexible circuit board interface 5.
  • the first film layer 4 is located throughout the display area 11.
  • the boundary refers to the boundary 42 between the vertical projection 41 of the first film layer 4 on the flexible substrate 1 and the peripheral region 12. Since the first film layer 4 and the array layer located therebelow are very thin, it can be considered that the first film layer 4 and the peripheral region 12 are in the same plane, and the boundary line 42 can be regarded as the edge of the first film layer 4 in contact with the peripheral region 12. Boundary. In addition, the boundary 42 can also be regarded as the sum of the boundary between the edge of the first film layer 4 and the peripheral region 12 and the side above the edge of the first film layer 4. Therefore, the flexible protective film layer 6 covers the boundary line 42, and the first film layer 4 and the peripheral region 12 can be tightly connected, and the edge gap between the first film layer 4 and the lower portion thereof can be closed to avoid internal oxidation and corrosion.
  • the flexible substrate 1 of the display area 11 different elements or film layers may be provided depending on the type of display panel to which the array substrate is applied, and generally include the above-described array layers. Since the display area 11 has a multi-layered structure, the display area 11 has greater strength than the peripheral area 12. In the peripheral region 12, except for the rigid integrated circuit component 2, the flexible circuit board interface 5, and the metal wiring, other film layers are generally not disposed, so the flexible substrate 1 of the peripheral region 12 and the flexible substrate 1 of the display region 11 are The intensity varies greatly.
  • the flexible protective film layer 6 is formed on the flexible substrate 1 except the interface between the peripheral region 12 and the first film layer 4 and the peripheral region 12 except the integrated circuit component and the flexible circuit board interface.
  • the layer 6 (mainly in the peripheral region 12) and the flexible substrate 1 combined therewith form a composite hierarchical structure, improving the strength of the flexible substrate 1 of the peripheral region 12.
  • the material of the flexible protective film layer 6 is an epoxy resin adhesive, a silicone adhesive or an ultraviolet light curing adhesive.
  • the flexible protective film layer 6 has the following requirements: the viscosity of the flexible protective film layer 6 is 40 ⁇ 50Pa ⁇ s, the shear strength of the flexible protective film layer 6 after curing is 25 to 35 MPa, the peeling strength of the flexible protective film layer 6 after curing is 9 to 12 KN/m.
  • the flexible protective film layer 6 has a thickness of 5 to 15 ⁇ m.
  • the first film layer 4 is a barrier film layer
  • the barrier film layer is, for example, doped silicon-rich silicon nitride (SiNx) or silicon monoxide (SiO) polyethylene naphthalate (PEN).
  • SiNx silicon-rich silicon nitride
  • SiO silicon monoxide
  • PEN polyethylene naphthalate
  • the array substrate When the array substrate is used for an OLED display panel, the array substrate further includes an organic electroluminescent OLED film layer (not shown) disposed between the array layer (not shown) and the first film layer 4.
  • the first film layer 4 is an electronic ink display film layer.
  • the flexible protective film layer is formed on the flexible substrate except the interface between the peripheral region and the first film layer and the peripheral region except the integrated circuit component and the flexible circuit board interface, thereby improving the flexibility of the peripheral region.
  • the strength of the substrate, when the flexible substrate is separated from the carrier substrate, the force is uniform, and the line breakage in the peripheral area is avoided, thereby improving the product yield.
  • the embodiment of the invention provides a flexible display panel, which comprises the array substrate provided by the above embodiments.
  • the flexible protective film layer is formed on the flexible substrate except the interface between the peripheral region and the first film layer and the peripheral region except the integrated circuit component and the flexible circuit board interface, thereby improving the flexibility of the peripheral region.
  • the strength of the substrate, when the flexible substrate is separated from the carrier substrate, the force is uniform, and the line breakage in the peripheral area is avoided, thereby improving the product yield.
  • Embodiments of the present invention provide a display device including the flexible display panel provided in the above embodiment.
  • the flexible protective film layer is formed on the flexible substrate except the interface between the peripheral region and the first film layer and the peripheral region except the integrated circuit component and the flexible circuit board interface, thereby improving the flexibility of the peripheral region.
  • the strength of the substrate, when the flexible substrate is separated from the carrier substrate, the force is uniform, and the line breakage in the peripheral area is avoided, thereby improving the product yield.
  • an embodiment of the present invention provides a method for preparing an array substrate, including:
  • a flexible substrate is provided.
  • the flexible substrate is divided into a display area and a peripheral area, and the peripheral area surrounds the display area.
  • step 504 includes: coating an epoxy resin having a thickness of 5 to 15 micrometers on a flexible substrate other than the integrated circuit component and the flexible circuit board interface at the boundary between the peripheral region and the package barrier film, and the peripheral region. a binder-like material or a silicone-based binder material, which is cured at room temperature for 60 minutes to form a flexible protective film layer; or, at the interface between the peripheral region and the package barrier film, and the peripheral region except the integrated circuit component and the flexible circuit board interface
  • the outer flexible substrate is coated with a UV-curable adhesive material having a thickness of 5 to 15 ⁇ m, and a flexible protective film layer is formed by ultraviolet light curing.
  • the method further includes: forming an OLED film layer between the array layer and the first film layer, and the OLED film layer may adopt an evaporation OLED.
  • the material is formed, and the first film layer is a barrier film layer that prevents water from permeating.
  • the barrier film layer is one of a polyethylene naphthalate (PEN) film doped with SiNx or SiO, a polyethylene terephthalate (PET) film, and a polyimide (PI) film.
  • PEN polyethylene naphthalate
  • PET polyethylene terephthalate
  • PI polyimide
  • the first film layer is an electronic ink display film layer.
  • the electronic ink display film layer can be prepared by attaching.
  • step 504 the step of peeling the flexible substrate from the carrier substrate is further included.
  • the back surface of the flexible substrate may be irradiated with a laser to separate the flexible substrate from the rigid carrier substrate.
  • the flexible protective film layer is formed on the flexible substrate except the interface between the peripheral region and the first film layer and the peripheral region except the integrated circuit component and the flexible circuit board interface, thereby improving the flexibility of the peripheral region.
  • the strength of the substrate, when the flexible substrate is separated from the carrier substrate, the force is uniform, and the line breakage in the peripheral area is avoided, thereby improving the product yield.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

一种阵列基板及其制备方法、柔性显示面板和显示装置，该阵列基板包括划分为显示区（11）和外围区（12）的柔性基板（1），所述外围区（12）围绕所述显示区（11），所述阵列基板还包括：依次形成于所述显示区（11）的所述柔性基板（1）上的阵列层和第一膜层（4）；形成于所述外围区（12）的所述柔性基板（1）上的多个集成电路元件（2）和柔性线路板接口（5）；形成于所述外围区（12）与所述第一膜层（4）的交界处、以及形成于所述外围区（12）除所述集成电路元件（2）和所述柔性线路板接口（5）之外的所述柔性基板（1）上的柔性保护膜层（6）。

Description

阵列基板及其制备方法、柔性显示面板和显示装置 技术领域
本发明的实施例涉及一种阵列基板及其制备方法、柔性显示面板和显示装置。
背景技术
柔性显示是显示技术的重要发展方向，该技术具有可弯曲、不易碎、超轻超薄、低功耗和便携等特点，在电子书、移动通信、笔记本、电视、公共信息等领域具有广阔的应用前景和良好的发展预期。
在制备柔性显示器件所需要的柔性阵列基板时，通常将柔性基板贴附在刚性承载基板上，在柔性基板上面制备显示器件，最后再通过机械或者激光照射的方法将柔性基板与承载基板分离。柔性基板可划分为显示区、围绕显示区的外围区，柔性基板的外围区形成有集成电路元件(Integrate Circuit，IC)、柔性电路板(Flexible Printed Circuit Board，FPC)的接口、以及连接集成电路元件和柔性线路板的线路。图1为理想情况下柔性基板无变形的示意图，柔性基板1上形成有集成电路元件2以及用于使集成电路元件2和所述柔性基板1连接的各项异性导电胶3。图2为柔性基板从承载基板剥离后发生应力变形的示意图，集成电路元件2与柔性基板1的连接点发生开裂，部分各项异性导电胶3失效。造成如图2所示的不良的原因包括：外围区的膜层数量相比显示区的膜层数量少很多，且集成电路元件或各种线路为硬性材质会影响应力分布，因此在柔性基板与承载基板分离的时候，柔性基板瞬间释放应力不均匀，容易造成外围区的线路断裂，降低产品良率。
发明内容
根据本发明的实施例，提供一种阵列基板。该阵列基板包括划分为显示区和外围区的柔性基板，所述外围区围绕所述显示区。所述阵列基板还包括：依次形成于所述显示区的所述柔性基板上的有阵列层和第一膜层；形成于所述外围区的所述柔性基板上的多个集成电路元件和柔性线路板接口；形成于 所述外围区与所述第一膜层的交界处、以及形成于所述外围区除所述集成电路元件和所述柔性线路板接口之外的所述柔性基板上的柔性保护膜层。
例如，所述柔性保护膜层的材料为环氧树脂类粘结剂、硅胶类粘结剂或紫外光固化粘结剂。
例如，所述柔性保护膜层的粘度范围为40～50Pa·s，所述柔性保护膜层固化后的剪切强度为25～35MPa，所述柔性保护膜层固化后的剥离力强度为9～12KN/m。
例如，所述柔性保护膜层的厚度为5～15微米。
例如，所述第一膜层为阻隔膜层，所述阻隔膜层为掺杂富硅氮化硅或一氧化硅的聚萘二甲酸乙二醇脂薄膜、聚对苯二甲酸乙二醇脂薄膜或聚酰亚胺薄膜中的一种或者任意组合的复合膜层。
例如，所述阵列基板还包括：设置于所述阵列层和所述阻隔膜层之间的有机电致发光膜层。
例如，所述第一膜层为电子墨水显示膜层。
根据本发明的实施例，提供一种柔性显示面板。该柔性显示面板包括如上所述的阵列基板。
根据本发明的实施例，提供一种显示装置。该显示装置包括如上所述的显示面板。
根据本发明的实施例，提供一种阵列基板的制备方法。该制备方法包括：提供一柔性基板，所述柔性基板划分为显示区和外围区，所述外围区围绕所述显示区；在所述显示区的所述柔性基板上依次形成阵列层和第一膜层；在所述外围区的所述柔性基板上形成多个集成电路元件和柔性线路板接口；在所述外围区与所述封装阻隔膜交界处、以及所述外围区除所述集成电路元件和所述柔性线路板接口之外的所述柔性基板上形成柔性保护膜层。
例如，在所述外围区与所述封装阻隔膜交界处、以及所述外围区除所述集成电路元件和所述柔性线路板接口之外的所述柔性基板上形成柔性保护膜层，包括：在所述外围区与所述封装阻隔膜交界处、以及所述外围区除所述集成电路元件和所述柔性线路板接口之外的所述柔性基板上涂覆环氧树脂类粘结剂材料或硅胶类粘结剂材料，在室温下固化形成所述柔性保护膜层；或者，在所述外围区与所述封装阻隔膜交界处、以及所述外围区除所述集成电 路元件和所述柔性线路板接口之外的所述柔性基板上涂覆紫外光固化粘结剂材料，通过紫外光固化形成所述柔性保护膜层。
例如，所述柔性保护膜层的粘度范围为40～50Pa·s，所述柔性保护膜层固化后的剪切强度为25～35MPa，所述柔性保护膜层固化后的剥离力强度为9～12KN/m。
例如，所述柔性保护膜层的厚度为5～15微米。
例如，所述第一膜层为阻隔膜层，所述阻隔膜层为掺杂富硅氮化硅或一氧化硅的聚萘二甲酸乙二醇脂薄膜、聚对苯二甲酸乙二醇脂薄膜或聚酰亚胺薄膜中的一种或者任意组合的复合膜层。
例如，所述制备方法还包括：在述阵列层和所述阻隔膜层之间形成有机电致发光膜层。
例如，所述第一膜层为电子墨水显示膜层。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为理想情况下柔性基板无变形的示意图；
图2为柔性基板从承载基板剥离后发生应力变形的示意图；
图3为本发明实施例提供的一种阵列基板的俯视示意图；
图4为包括显示区和外围区的柔性基板的示意图；
图5为本发明实施例提供的一种阵列基板的制备方法的流程图；
图6为本发明实施例中外围区与第一膜层的交界处的示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一
参见图3和图4，本发明实施例提供一种阵列基板，包括划分为显示区11和外围区12的柔性基板1，外围区12围绕显示区11。该阵列基板还包括：
依次形成于显示区11的柔性基板1上的阵列层(未示出)和第一膜层4；形成于外围区12的柔性基板1上的多个集成电路元件2和柔性电路板接口5；形成于外围区12与第一膜层4的交界处、以及形成于外围区12除集成电路元件2和柔性电路板接口5之外的柔性基板1上的柔性保护膜层6。例如，第一膜层4位于整个显示区11。
如图6所示，需要说明的是，该交界处是指第一膜层4在柔性基板1上的垂直投影41与外围区12的界线42。由于第一膜层4及位于其下方的阵列层非常薄，因此可以视第一膜层4与外围区12在同一平面，界线42可以视为第一膜层4的边缘与外围区12接触的界线。另外，界线42也可以视为第一膜层4的边缘与外围区12接触的界线与第一膜层4的边缘以上的侧面的总和。因此，柔性保护膜层6覆盖该界线42，可以使第一膜层4和外围区12之间紧密连接，并封闭第一膜层4与其下层各部分的边缘空隙，避免内部的氧化和腐蚀。
在显示区11的柔性基板1上，根据阵列基板应用的显示面板的类型不同，可以具有不同的元件或膜层，通常均包括上述的阵列层。由于该显示区11具有多层结构，因此显示区11较外围区12具有较大的强度。在外围区12除偏向于刚性的集成电路元件2、柔性电路板接口5及金属线路之外，通常不会设置其他的膜层，因此外围区12的柔性基板1与显示区11的柔性基板1的强度差异较大。本实施例中，通过在外围区12与第一膜层4的交界处、以及外围区12除集成电路元件和柔性线路板接口之外的柔性基板1上形成柔性保护膜层6，柔性保护膜层6(主要在外围区12内)和与其相结合的柔性基板1形成复合的层级结构，提高外围区12的柔性基板1的强度。
例如，柔性保护膜层6的材料为环氧树脂类粘结剂、硅胶类粘结剂或紫外光固化粘结剂。
为了确保设置有柔性保护膜层6的柔性基板1具有足够的强度，且与承载基板分离的时候受力均匀，例如对柔性保护膜层6具有如下要求：柔性保护膜层6的粘度范围为40～50Pa·s，柔性保护膜层6固化后的剪切强度为 25～35MPa，柔性保护膜层6固化后的剥离力强度为9～12KN/m。
例如，柔性保护膜层6的厚度为5～15微米。
例如，第一膜层4为阻隔膜层，并且阻隔膜层例如为掺杂富硅氮化硅(SiNx)或一氧化硅(SiO)的聚萘二甲酸乙二醇脂(Polyethylene Naphthalate，PEN)薄膜、聚对苯二甲酸乙二醇脂(Polyethylene Terephthalate，PET)薄膜、聚酰亚胺(Polyimide，PI)薄膜中的一种或者它们任意组合的复合膜层。
当该阵列基板用于OLED显示面板时，阵列基板还包括设置于阵列层(未示出)和第一膜层4之间的有机电致发光OLED膜层(未示出)。
当该阵列基板用于电泳显示面板时，第一膜层4为电子墨水显示膜层。
本发明实施例有益效果如下：通过在外围区与第一膜层的交界处、以及外围区除集成电路元件和柔性线路板接口之外的柔性基板上形成柔性保护膜层，提高外围区的柔性基板的强度，柔性基板与承载基板分离的时候受力均匀，避免外围区的线路断裂，从而提高产品良率。
实施例二
本发明实施例提供一种柔性显示面板，包括如上实施例提供的阵列基板。
本发明实施例有益效果如下：通过在外围区与第一膜层的交界处、以及外围区除集成电路元件和柔性线路板接口之外的柔性基板上形成柔性保护膜层，提高外围区的柔性基板的强度，柔性基板与承载基板分离的时候受力均匀，避免外围区的线路断裂，从而提高产品良率。
实施例三
本发明实施例提供一种显示装置，包括如上实施例提供的柔性显示面板。
本发明实施例有益效果如下：通过在外围区与第一膜层的交界处、以及外围区除集成电路元件和柔性线路板接口之外的柔性基板上形成柔性保护膜层，提高外围区的柔性基板的强度，柔性基板与承载基板分离的时候受力均匀，避免外围区的线路断裂，从而提高产品良率。
实施例四
参见图5，本发明实施例提供一种阵列基板的制备方法，包括：
501、提供一柔性基板，柔性基板划分为显示区和外围区，外围区围绕显示区。
502、在显示区的柔性基板上依次形成阵列层和第一膜层。
503、在外围区的柔性基板上形成多个集成电路元件和柔性线路板接口。
504、在外围区与封装阻隔膜交界处、以及外围区除集成电路元件和柔性线路板接口之外的柔性基板上形成柔性保护膜层。
在本实施例中，步骤504包括：在外围区与封装阻隔膜交界处、以及外围区除集成电路元件和柔性线路板接口之外的柔性基板上涂覆厚度为5～15微米的环氧树脂类粘结剂材料或硅胶类粘结剂材料，在室温下固化60分钟形成柔性保护膜层；或者，在外围区与封装阻隔膜交界处、以及外围区除集成电路元件和柔性线路板接口之外的柔性基板上涂覆厚度为5～15微米的紫外光固化粘结剂材料，通过紫外光固化形成柔性保护膜层。
当然，对于用于不同显示面板的阵列基板，需要进行不同的元件或膜层的制备。例如，对于OLED显示面板，在显示区的柔性基板上依次形成阵列层和第一膜层时还包括：在阵列层和第一膜层之间形成OLED膜层，OLED膜层可以采用蒸镀OLED材料来形成，第一膜层为防止水氧透过的阻隔膜层。例如，阻隔膜层为掺杂SiNx或SiO的聚萘二甲酸乙二醇脂(PEN)薄膜、聚对苯二甲酸乙二醇脂(PET)薄膜、聚酰亚胺(PI)薄膜中的一种或者它们任意组合的复合膜层。在此不再赘述。
又例如，对于电泳显示面板，第一膜层为电子墨水显示膜层。电子墨水显示膜层可以采用贴附的方式制备。
当然，本实施例中，在步骤504之后，还包括将柔性基板与承载基板进行剥离的步骤。可以采用激光照射柔性基板背面，使柔性基板与刚性承载基板分离。
本发明实施例有益效果如下：通过在外围区与第一膜层的交界处、以及外围区除集成电路元件和柔性线路板接口之外的柔性基板上形成柔性保护膜层，提高外围区的柔性基板的强度，柔性基板与承载基板分离的时候受力均匀，避免外围区的线路断裂，从而提高产品良率。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2014年10月22日递交的第201410567471.0号中国专利申请的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (16)

  1. 一种阵列基板，包括划分为显示区和外围区的柔性基板，所述外围区围绕所述显示区；其中所述阵列基板还包括：
    依次形成于所述显示区的所述柔性基板上的有阵列层和第一膜层；
    形成于所述外围区的所述柔性基板上的多个集成电路元件和柔性线路板接口；
    形成于所述外围区与所述第一膜层的交界处、以及形成于所述外围区除所述集成电路元件和所述柔性线路板接口之外的所述柔性基板上的柔性保护膜层。
  2. 如权利要求1所述的阵列基板，其中所述柔性保护膜层的材料为环氧树脂类粘结剂、硅胶类粘结剂或紫外光固化粘结剂。
  3. 如权利要求2所述的阵列基板，其中所述柔性保护膜层的粘度范围为40～50Pa·s，所述柔性保护膜层固化后的剪切强度为25～35MPa，所述柔性保护膜层固化后的剥离力强度为9～12KN/m。
  4. 如权利要求2所述的阵列基板，其中所述柔性保护膜层的厚度为5～15微米。
  5. 如权利要求1所述的阵列基板，其中所述第一膜层为阻隔膜层，所述阻隔膜层为掺杂富硅氮化硅或一氧化硅的聚萘二甲酸乙二醇脂薄膜、聚对苯二甲酸乙二醇脂薄膜或聚酰亚胺薄膜中的一种或者任意组合的复合膜层。
  6. 如权利要求5所述的阵列基板，还包括：设置于所述阵列层和所述阻隔膜层之间的有机电致发光膜层。
  7. 如权利要求1所述的阵列基板，其中所述第一膜层为电子墨水显示膜层。
  8. 一种柔性显示面板，包括如权利要求1至7任意一项所述的阵列基板。
  9. 一种显示装置，包括如权利要求8所述的柔性显示面板。
  10. 一种阵列基板的制备方法，包括：
    提供一柔性基板，所述柔性基板划分为显示区和外围区，所述外围区围绕所述显示区；
    在所述显示区的所述柔性基板上依次形成阵列层和第一膜层；
    在所述外围区的所述柔性基板上形成多个集成电路元件和柔性线路板接口；
    在所述外围区与所述封装阻隔膜交界处、以及所述外围区除所述集成电路元件和所述柔性线路板接口之外的所述柔性基板上形成柔性保护膜层。
  11. 如权利要求10所述的制备方法，其中在所述外围区与所述封装阻隔膜交界处、以及所述外围区除所述集成电路元件和所述柔性线路板接口之外的所述柔性基板上形成柔性保护膜层，包括：
    在所述外围区与所述封装阻隔膜交界处、以及所述外围区除所述集成电路元件和所述柔性线路板接口之外的所述柔性基板上涂覆环氧树脂类粘结剂材料或硅胶类粘结剂材料，在室温下固化形成所述柔性保护膜层；或者，
    在所述外围区与所述封装阻隔膜交界处、以及所述外围区除所述集成电路元件和所述柔性线路板接口之外的所述柔性基板上涂覆紫外光固化粘结剂材料，通过紫外光固化形成所述柔性保护膜层。
  12. 如权利要求11所述的制备方法，其中所述柔性保护膜层的粘度范围为40～50Pa·s，所述柔性保护膜层固化后的剪切强度为25～35MPa，所述柔性保护膜层固化后的剥离力强度为9～12KN/m。
  13. 如权利要求11所述的制备方法，其中所述柔性保护膜层的厚度为5～15微米。
  14. 如权利要求10所述的制备方法，其中所述第一膜层为阻隔膜层，所述阻隔膜层为掺杂富硅氮化硅或一氧化硅的聚萘二甲酸乙二醇脂薄膜、聚对苯二甲酸乙二醇脂薄膜或聚酰亚胺薄膜中的一种或者任意组合的复合膜层。
  15. 如权利要求14所述的制备方法，还包括：在述阵列层和所述阻隔膜层之间形成有机电致发光膜层。
  16. 如权利要求10所述的制备方法，其中所述第一膜层为电子墨水显示膜层。
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