WO2016107323A1 - 显示基板及其制造方法、显示面板和掩膜板 - Google Patents

显示基板及其制造方法、显示面板和掩膜板 Download PDF

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Publication number
WO2016107323A1
WO2016107323A1 PCT/CN2015/094860 CN2015094860W WO2016107323A1 WO 2016107323 A1 WO2016107323 A1 WO 2016107323A1 CN 2015094860 W CN2015094860 W CN 2015094860W WO 2016107323 A1 WO2016107323 A1 WO 2016107323A1
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Prior art keywords
layer
anode
auxiliary electrode
forming
regions
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PCT/CN2015/094860
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English (en)
French (fr)
Inventor
宋泳锡
刘圣烈
崔承镇
金熙哲
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to EP15856178.7A priority Critical patent/EP3242325B1/en
Priority to US15/038,093 priority patent/US9831461B2/en
Publication of WO2016107323A1 publication Critical patent/WO2016107323A1/zh
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to the field of display technology of an organic light emitting diode (OLED), and in particular to a display substrate, a display panel including the display substrate, a method of manufacturing the display substrate, and the method used in the manufacturing method.
  • OLED organic light emitting diode
  • the display substrate of the organic light emitting diode display panel includes a thin film transistor array including a plurality of thin film transistors, and a light emitting device array including an anode layer, a cathode layer, and the anode layer and the cathode a luminescent layer between the layers.
  • the anode layer includes a plurality of anodes, and the anodes are connected in one-to-one correspondence with the drains of the thin film transistors.
  • the cathode layer is usually formed by sputtering a transparent material such as indium tin oxide (ITO) or a vapor-deposited transparent material over the light-emitting layer. If the cathode layer is formed by sputtering ITO, the light-emitting layer is easily damaged and the luminous efficiency of the organic light-emitting diode display panel is lowered.
  • ITO indium tin oxide
  • the cathode layer can also be formed by vapor-depositing a transparent material having a good reflectance, but the cathode layer formed in this manner usually has a large electric resistance and generates a large resistance voltage drop when displayed ( IR Drop), which ultimately reduces the picture quality of the display panel.
  • An object of the present invention is to provide a display substrate, a display panel including the display substrate, a method of manufacturing the display substrate, and a mask used in the manufacturing method for solving a large drop in cathode resistance
  • the display panel has a poor picture quality when displayed.
  • a display substrate comprising an anode layer, a cathode layer, and a light emitting layer disposed between the anode layer and the cathode layer, the anode layer including a plurality of anodes
  • the light emitting layer includes a plurality of light emitting regions
  • the display substrate further includes at least one auxiliary electrode, the auxiliary electrode is insulated from the anode, and the auxiliary electrode is in parallel contact with the cathode layer, such that The overall resistance of the auxiliary electrode in parallel with the cathode layer is smaller than the resistance of the cathode layer itself.
  • the auxiliary electrode is disposed in the same layer as the anode layer.
  • the display substrate further includes a spacer, and two sides of the auxiliary electrode are respectively formed with an insulation interval, a part of the spacer is disposed in the corresponding insulation interval, and another portion protrudes from the anode layer And insulating the auxiliary electrode from the anode.
  • the spacers are a plurality of pairs, the plurality of pairs of spacers dividing the display substrate into a plurality of anode regions and a plurality of auxiliary electrode regions, each of the anode regions being provided with at least one of the anodes And the light-emitting region, each of the auxiliary electrode regions is provided with the auxiliary electrode, the auxiliary electrode region is disposed around the anode region, and the width of the auxiliary electrode region is smaller than the width of the anode region A portion of the cathode layer is located in a space between a pair of the spacers of the auxiliary electrode region to electrically connect the cathode layer and the auxiliary electrode.
  • the spacer comprises a row spacer extending in a lateral direction of the display substrate and a column spacer extending in a longitudinal direction of the display substrate.
  • the shape of the light-emitting regions formed in the two anode regions on both sides of the auxiliary electrode is different.
  • the display substrate further includes a spacer that divides the display substrate into a plurality of pixel units, a portion of the spacer penetrates the anode layer, and another portion is located above the anode layer.
  • each of the auxiliary electrodes has one of the spacers, and the plurality of auxiliary electrodes are connected in a mesh shape, and two sides of each of the auxiliary electrodes are respectively formed with an insulation interval, and each of the spacers includes a separate arrangement.
  • An insertion portion in the insulating space on both sides of the corresponding auxiliary electrode and a connection portion connecting the two insertion portions, and the connection portion of at least one of the spacers is formed on the connection portion for exposing the auxiliary Via of the electrode, the cathode A layer is connected in parallel with the auxiliary electrode through the via.
  • the spacer encloses a plurality of regions and the shapes of two adjacent regions are different, and the light-emitting region is formed in the region.
  • a display panel comprising the above display substrate provided by the present invention.
  • a method of manufacturing a display substrate comprising the steps of:
  • Forming an array of light emitting elements comprising:
  • anode layer Forming an anode layer and at least one auxiliary electrode, the anode layer including a plurality of anodes, the auxiliary electrodes being spaced apart from the anode;
  • a cathode layer is formed, the cathode layer being in parallel contact with the auxiliary electrode such that an overall resistance of the auxiliary electrode in parallel with the cathode layer is less than a resistance of the cathode layer itself.
  • the step of forming the anode layer and the at least one auxiliary electrode comprises disposing the anode layer and the at least one auxiliary electrode in the same layer.
  • the step of forming the anode layer and the at least one auxiliary electrode comprises:
  • the manufacturing method further includes:
  • the step of forming a cathode layer includes depositing a material forming a cathode layer in a space between the pair of spacers in which the auxiliary electrode is formed, such that the cathode layer is connected in parallel with the auxiliary electrode.
  • the step of forming the luminescent layer comprises:
  • the mask plate includes a plurality of openings corresponding to the plurality of anode regions and an occlusion corresponding to at least one of the auxiliary electrodes unit;
  • the material of the light-emitting layer is evaporated to form a plurality of the light-emitting regions deposited over the plurality of anode regions.
  • the plurality of anode regions are arranged in a plurality of rows and columns.
  • the shape of the two anode regions on both sides of the auxiliary electrode is different such that the shapes of the light-emitting regions deposited in the two anode regions are different.
  • the step of forming the anode layer and the at least one auxiliary electrode comprises:
  • the manufacturing method further includes:
  • a pattern comprising a spacer is formed, a portion of the spacer being in the insulating spacer and another portion being above the anode layer.
  • At least one of the plurality of the insulating intervals includes a first interval and a second interval, and the auxiliary electrode is formed between the first interval and the second interval, and the auxiliary electrode corresponds to the
  • the spacer includes an insertion portion respectively disposed in the insulating spacers on both sides of the auxiliary electrode and a connection portion connecting the two insertion portions;
  • the manufacturing method further includes a step of forming a via hole for exposing the auxiliary electrode on the connection portion between the step of forming the light emitting layer and the step of forming the cathode layer;
  • the step of forming a cathode layer includes depositing a material forming a cathode layer in the via to connect the cathode layer in parallel with the auxiliary electrode.
  • the step of forming the luminescent layer comprises:
  • the mask plate includes a plurality of opening portions and a plurality of shielding portions that space the plurality of opening portions, the shielding portion Corresponding to the auxiliary electrode;
  • the spacer encloses a plurality of regions and the shapes of two adjacent regions are different, and the light-emitting region is formed in the region.
  • a mask for use in the above manufacturing method provided by the present invention wherein the mask comprises a plurality of openings and corresponds to at least one of a shielding portion of the auxiliary electrode, wherein the shielding portion spaces the adjacent opening portions.
  • the display panel including the display substrate provided by the present invention When the display panel including the display substrate provided by the present invention operates, current is simultaneously conducted to the auxiliary electrode when the cathode layer is energized. Since the auxiliary electrode and the cathode layer are formed in parallel to form an assembly, and the resistance of the assembly is smaller than the resistance of the cathode layer itself, the cathode resistance voltage drop of the display substrate provided by the present invention is compared with the display substrate without the auxiliary electrode ( That is, the IR drop is small, so that the loss of the electrical signal in the cathode layer and the auxiliary electrode is also relatively small, so that relatively high picture quality can be obtained.
  • FIG. 1 is a schematic view of a substrate on which an anode layer is formed
  • FIG. 2 is a schematic view of a substrate on which a spacer is formed
  • FIG. 3 is a schematic view of a substrate on which a light-emitting layer is formed
  • FIG. 4 is a schematic view of a substrate on which a cathode layer is formed
  • Figure 5 is a schematic view of the packaged substrate
  • Figure 6 is a schematic view of an embodiment of a mask used in forming a light-emitting layer
  • Fig. 7 is a schematic view showing another embodiment of a mask used in forming a light-emitting layer.
  • a display substrate includes an anode layer, a cathode layer 60, and a light emitting layer disposed between the anode layer and the cathode layer 60, the anode layer including a plurality of anodes 21, the light emitting layer including a plurality of light emitting regions 50,
  • the anode layer further includes at least one auxiliary electrode 22, the auxiliary electrode 22 is insulated from the anode 21, and the auxiliary electrode 22 is in parallel contact with the cathode layer 60, so that the overall resistance of the auxiliary electrode 22 in parallel with the cathode layer 60 is smaller than that of the cathode.
  • the resistance of layer 60 itself.
  • the cathode layer 60 When the cathode layer 60 is energized, current is simultaneously conducted to the auxiliary electrode 22. Since the auxiliary electrode 22 and the cathode layer 60 are formed in parallel to form an assembly, and the resistance of the assembly is smaller than the resistance of the cathode layer 60 itself, the cathode of the display substrate provided by the present invention is compared with the display substrate not provided with the auxiliary electrode 22.
  • the resistance drop i.e., IR drop
  • the loss of the electrical signal in the cathode layer 60 and the auxiliary electrode 22 is also relatively small, so that relatively high picture quality can be obtained.
  • each of the anodes 21 is provided with a light-emitting region 50 formed of a material forming the light-emitting layer, but a material for forming the light-emitting layer is not provided above the auxiliary electrode.
  • the cathode layer 60 may be in parallel contact with the auxiliary electrode 22 through the contact via, or may be in parallel contact with the auxiliary electrode 22 by other means. Further, in the present invention, the installation position of the auxiliary electrode 22 is not particularly limited as long as the auxiliary electrode 22 is disposed at a position that does not affect the normal display of the display panel.
  • the anode layer, the luminescent layer and the cathode layer constitute an array of illuminators, the array of illuminators comprising a plurality of illuminators.
  • the anodes of the plurality of the light-emitting members are formed as the anode layer, and the light-emitting regions of the plurality of the light-emitting members are formed as the light-emitting layer, and the cathodes of the plurality of the light-emitting members are formed as the cathode layer.
  • the display substrate further includes a thin film transistor array disposed under the light emitting device array, and the thin film transistor in the thin film transistor array forms a pixel circuit for driving the light emitting member to emit light.
  • the thin film transistor array includes a plurality of driving thin film transistors 10, each of which drives a light emitting member, and an anode of the light emitting member is connected to a drain of the driving thin film transistor 10 through a via.
  • the number of the auxiliary electrodes 22 is not particularly limited.
  • one auxiliary electrode 22 may be provided, or a plurality of auxiliary electrodes 22 may be provided.
  • the auxiliary electrode 22 may be a grid-shaped auxiliary electrode formed integrally at the edge of each pixel.
  • the relative positional relationship between the auxiliary electrode 22 and the anode 21 is not particularly limited as long as the auxiliary electrode 22 can be provided in insulation from the anode 21.
  • the auxiliary electrode 22 may be disposed above the anode 21, and an insulating layer may be disposed between the anode 21 and the auxiliary electrode 22, or as a preferred embodiment of the present invention, the auxiliary electrode 22 may be disposed in the same layer as in the anode layer.
  • the advantage of disposing the auxiliary electrode 22 in the anode layer is that the anode 21 and the auxiliary electrode 22 can be simultaneously formed by the same patterning process, which simplifies the manufacturing process of the display substrate and reduces the manufacturing difficulty of the display substrate.
  • auxiliary electrode 22 and the anode 21 are formed of the same material.
  • the structure of the anode layer formed may be a material having a good reflectance between two layers of ITO (for example, any one of aluminum, silver, gold, titanium, molybdenum, or an alloy of any of the above).
  • Another advantage of the auxiliary layer 22 and the anode 21 being disposed in the same layer is that the reflectance can be increased, thereby increasing the brightness of the display panel.
  • the auxiliary electrode 22 When the auxiliary electrode 22 is disposed in the same layer as the anode layer, the auxiliary electrode 22 and the anode 21 are disposed to be insulated from each other.
  • an insulating space 23 may be provided between the auxiliary electrode 22 and the anode 21 (see FIG. 1). It is easily understood that the material forming the luminescent layer is also not provided in the insulating spacer.
  • the display substrate may further include a spacer 40 that insulates the auxiliary electrode 22 from the anode 21.
  • the spacer 40 can ensure that the auxiliary electrode 22 is reliably insulated from the anode 21 by insulation.
  • the specific shape of the spacer 40 is not particularly limited as long as it can insulate the auxiliary electrode 22 from the anode 21.
  • two sides of each auxiliary electrode 22 are respectively formed with insulating spaces 23, and each of the insulating spaces 23 is provided with a spacer 40, a part of the spacer 40 is disposed in the corresponding insulating space 23, and the other part is convex.
  • the anode layer is insulated from the auxiliary electrode 22 and the anode 21 adjacent thereto.
  • the auxiliary electrode 22 should be disposed at a position that does not affect the normal illumination of the display panel.
  • the auxiliary electrode 22 may be disposed around the anode 21.
  • a plurality of pairs of spacers 40 are disposed, the plurality of pairs of spacers 40 dividing the display substrate into a plurality of An anode region and a plurality of auxiliary electrode regions, each of the anode regions is provided with at least one anode and a light-emitting region 50 formed of a material forming the light-emitting layer, and each of the auxiliary electrode regions is provided with an auxiliary electrode 22,
  • the auxiliary electrode region is disposed around the anode region.
  • the width of the auxiliary electrode region is smaller than the width of the anode region. It is easily understood that the anode 21 is disposed in the anode region, and the auxiliary electrode 22 and the spacer 40 are both disposed in the auxiliary electrode region. A portion of the cathode layer 60 is located in the auxiliary electrode region between the pair of spacers 40 to electrically connect the cathode layer 60 and the auxiliary electrode 22.
  • the number of anodes provided in each anode region is not limited.
  • a plurality of anodes may be provided in each anode region, or one anode may be disposed in each anode region. It should be understood that when a plurality of anodes are disposed in each anode region, the plurality of anodes in the same anode region are insulated from each other by a pixel defining member.
  • the spacer may include a row spacer extending in a lateral direction of the display substrate and a column spacer extending in a longitudinal direction of the display substrate.
  • Fig. 6 shows a mask for forming a display substrate according to this embodiment when the light-emitting layer is a white light material. As shown in FIG. 6, the mask includes an opening portion 81 and a shielding portion 82. The opening portion 81 corresponds to the anode region, and the shielding portion 82 corresponds to the auxiliary electrode region.
  • the shape of the anode region can be rectangular, and the auxiliary electrode region is in the form of a grid, and the row spacers are formed in the regions corresponding to the shielding portions extending in the left-right direction in FIG. 6, and the column spacers are formed in the figure. 6 is in the region corresponding to the blocking portion extending in the up-and-down direction.
  • FIG. 6 Shown in FIG. 6 is a mask having a regular shape.
  • the shape of the two anode regions on either side of any one of the auxiliary electrodes 22 is the same, that is, the auxiliary
  • the two light-emitting areas on both sides of the electrode have the same shape.
  • the advantage of such a mask is that the manufacturing process is simple and the cost is low.
  • the shapes of the two anode regions on either side of any one of the auxiliary electrodes may be different, and therefore, the shapes of the corresponding light-emitting regions above the two anode regions are also different.
  • Shown in Figure 7 is a schematic view of a mask forming such a display substrate.
  • the mask includes an opening portion 81 and a shielding portion 82.
  • the opening portion 81 corresponds to the hair In the light member region
  • the shielding portion 82 corresponds to the auxiliary electrode region.
  • the shapes of the two opening portions 81 on both sides of the auxiliary electrode may be different. Therefore, in the display substrate formed by such a mask, the illuminating member regions on both sides of the auxiliary electrode may be different.
  • An advantage of using such a mask is that the display panel can be prevented from forming a moire defect upon display.
  • the manufacturer can use the mask shown in Figure 6 or the mask shown in Figure 7 depending on the specific product requirements.
  • the specific type of the display substrate is not specifically limited.
  • the display substrate may be a WOLED display substrate.
  • the display substrate further includes dividing the display substrate into A spacer of a plurality of pixel units, a portion of the spacer penetrating the anode layer and another portion being above the anode layer. That is, the spacer can be used as a pixel definition member.
  • the display substrate may also be in an RGB separation mode.
  • the sub-pixels of each color are separately fabricated, it is not necessary to separately fabricate a mask for shielding the auxiliary electrodes. .
  • each of the auxiliary electrodes has one of the spacers, and the plurality of auxiliary electrodes are connected in a mesh shape, and each of the auxiliary electrodes is formed with an insulation interval on both sides thereof.
  • Each of the spacers includes an insertion portion respectively disposed in the insulating spacers on both sides of the corresponding auxiliary electrode and a connection portion connecting the two insertion portions, at least one of the connection portions being formed for exposing A via of the auxiliary electrode, the cathode layer being in parallel contact with the auxiliary electrode through the via. That is, the display substrate includes at least one via connecting the auxiliary electrode and the cathode layer. Since the plurality of auxiliary electrodes are connected in a mesh shape, the cathode layer of the display substrate can be brought into parallel contact with the auxiliary electrode by one via hole.
  • the spacer encloses a plurality of regions and the shapes of adjacent two of the regions are different (ie, the shapes of the formed light-emitting regions are different) .
  • a planarization layer 30 may be disposed between the light emitting device array and the thin film transistor array, and the anode 21 passes through the via 15 of the planarization layer 30 and the driving thin film transistor 10 The drains are connected. It is easy to understand that the display substrate may further include an encapsulation layer 70.
  • a display panel including a display substrate, wherein the display substrate is the above display substrate provided by the present invention.
  • the auxiliary electrode 22 is provided in the display substrate in parallel with the cathode layer 60, and the resistance of the assembly formed by the cathode layer 60 and the auxiliary electrode 22 is smaller than the resistance of the cathode layer 60 itself, the display substrate is provided. At the time of the signal, the pressure drop of the assembly formed by the cathode layer 60 and the auxiliary electrode 22 is small, so that the display panel can obtain a higher picture quality.
  • the display panel can be used in electronic devices such as televisions, mobile phones, and tablet computers.
  • a method of manufacturing a display substrate comprising the following steps:
  • Forming an array of light emitting elements comprising:
  • An anode layer is formed and at least one auxiliary electrode 22 is formed.
  • the anode layer includes a plurality of anodes 21, and the anodes 21 are connected in one-to-one correspondence with the drains of the driving thin film transistors 10.
  • the auxiliary electrodes 22 are insulated from the anodes 21 (see the figure). 1);
  • the light-emitting layer includes a plurality of light-emitting regions 50 corresponding to the plurality of anodes 21 in one-to-one correspondence;
  • the cathode layer 60 (see FIG. 4) is formed, and the cathode layer 60 is in parallel contact with the auxiliary electrode 22 such that the overall resistance of the auxiliary electrode 22 in parallel with the cathode layer 60 is smaller than the resistance of the cathode layer 60 itself.
  • the auxiliary electrode 22 is provided in the display substrate in parallel with the cathode layer 60, the resistance of the assembly formed by the cathode layer 60 and the auxiliary electrode 22 is smaller than the resistance of the cathode layer 60 itself, and therefore, When the display substrate provides a signal, the pressure drop of the assembly formed by the cathode layer 60 and the auxiliary electrode 22 is small, so that the display panel can obtain higher picture quality.
  • the manufacturing method further includes the step of forming a thin film transistor array including a plurality of driving thin film transistors before forming the light emitting device array.
  • the specific method of forming the array of driving thin film transistors is not particularly limited as long as a driving thin film transistor for driving the array of the light emitting elements can be formed.
  • the specific process for forming the cathode layer 60 is not specifically limited.
  • the cathode layer 60 can be formed by evaporation or sputtering.
  • the step of forming the anode layer and the at least one auxiliary electrode 22 includes disposing the anode layer and the at least one auxiliary electrode 22 in the same layer.
  • the step of forming the anode layer and the at least one auxiliary electrode may include:
  • the manufacturing method further comprises:
  • Each spacer 40 (see FIG. 2) is formed with a portion of the spacer 40 disposed in the insulating space between the anode 21 and the auxiliary electrode 22, and another portion of the spacer 40 protruding from the anode layer.
  • a material forming the cathode layer is deposited in a space between the pair of spacers between the pair of auxiliary electrodes, such that the cathode layer and the auxiliary electrode Connected in parallel.
  • the spacer 40 may be made of any one of insulating materials.
  • the spacer 40 may be formed of an oxide of silicon (SiOx) or a nitride of silicon (SiNx).
  • the spacer 40 is also formed by a patterning process.
  • the step of forming the spacer may include:
  • the insulating material film is etched by using the exposed developed photoresist as a mask to form the spacer.
  • spacer 40 can also be formed by other methods, and details are not described herein again.
  • the step of forming the luminescent layer may include:
  • a mask (as shown in FIGS. 6 and 7) is disposed over the substrate substrate on which the anode layer is formed, wherein the mask includes a plurality of openings 81 corresponding to the plurality of anode regions And a blocking portion 82 corresponding to at least one of the auxiliary electrodes;
  • a material forming the light-emitting layer is vapor-deposited to deposit a plurality of light-emitting regions 50 over a plurality of the anode regions.
  • substrate substrate on which the anode layer is formed does not mean that only the anode layer is formed on the substrate substrate, but that the anode substrate is formed on the substrate substrate.
  • other structures for example, a planarization layer 30, a thin film transistor array, etc. are formed.
  • the structure of the anode layer formed may be a material having a good reflectance between two layers of ITO (for example, any one of aluminum, silver, gold, titanium, molybdenum, or an alloy of any of the above). .
  • the auxiliary electrode 22 may be disposed around the anode 21.
  • a plurality of rows and columns of anodes 21 may be provided.
  • the anodes arranged in a matrix form can be formed using the mask shown in FIG.
  • the mask has a simple structure and a low overall cost.
  • the shapes of the two anode regions on both sides of the auxiliary electrode may be different, and therefore, the shapes of the corresponding two light-emitting regions 50 are also different.
  • the above-described light-emitting region can be formed using the mask shown in FIG.
  • the display substrate formed by such a mask has less moiré defects when used for display of the display panel.
  • the thin film transistor array and the light emitting device array may further include a planarization layer 30, and therefore, preferably, the manufacturing method further includes the step of forming the thin film transistor array and the forming Steps between the steps of the array of illuminators:
  • the manufacturing method may further include:
  • An encapsulation layer 70 is formed.
  • the display substrate when the display substrate is a WOLED display substrate, the display substrate may further include a spacer serving as a pixel defining member.
  • the step of forming the anode layer and the at least one auxiliary electrode includes:
  • the manufacturing method further includes:
  • a pattern comprising a spacer is formed, a portion of the spacer being in the insulating spacer and another portion being above the anode layer.
  • At least one of the plurality of the insulating intervals includes a first interval and a second interval, and the auxiliary electrode is formed between the first interval and the second interval, and the auxiliary electrode corresponds to the
  • the spacer includes an insertion portion respectively disposed in the insulating spacers on both sides of the auxiliary electrode and a connection portion connecting the two insertion portions;
  • the manufacturing method further includes a step of forming a via hole for exposing the auxiliary electrode on the connection portion between the step of forming the light-emitting layer and the step of forming the cathode layer;
  • the step of forming a cathode layer includes depositing a material forming a cathode layer in the via to contact the cathode layer in parallel with the auxiliary electrode.
  • the light-emitting layer can be formed by a mask evaporation method, and specifically, the step of forming the light-emitting layer includes:
  • the mask plate includes a plurality of opening portions and a plurality of shielding portions that space the plurality of opening portions, the shielding portion Corresponding to the auxiliary electrode;
  • the material of the light-emitting layer is vapor-deposited to deposit the light-emitting region above the corresponding position of the opening portion.
  • the spacer encloses a plurality of regions and the shapes of adjacent two of the regions are different, and the light-emitting regions are formed in the regions.
  • the mask plate includes a plurality of opening portions 81 and a shielding portion 82 corresponding to at least one of the auxiliary electrodes, as shown in the drawing.
  • the shielding portion 82 is for spacing the adjacent opening portions 81.
  • the mask may be used only in the step of forming a light-emitting layer by an evaporation method.

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Abstract

提供一种显示基板，包括阳极层、阴极层（60）和设置在所述阳极层和所述阴极层（60）之间的发光层，所述阳极层包括多个阳极（21），所述发光层包括多个发光区（50），其中，所述显示基板还包括至少一个辅助电极（22），所述辅助电极（22）与所述阳极（21）绝缘间隔开，且所述辅助电极（22）与所述阴极层（60）并联接触，使得所述辅助电极（22）与所述阴极层（60）并联后的整体电阻小于所述阴极层自身的电阻。还提供了一种显示面板、一种显示基板的制造方法和一种掩膜板。上述显示基板的阴极电阻压降(IR drop)较小，因此，电信号在阴极层（60）以及辅助电极（22）中的损失也相对较小，从而可以获得相对较高的画面质量。

Description

显示基板及其制造方法、显示面板和掩膜板 技术领域
本发明涉及有机发光二极管(OLED，Organic Light Emitting Diode)显示技术领域，具体地，涉及一种显示基板、包括该显示基板的显示面板、所述显示基板的制造方法以及所述制造方法中所用到的掩膜板。
背景技术
有机发光二极管显示面板的显示基板包括薄膜晶体管阵列和发光件阵列，所述薄膜晶体管阵列包括多个薄膜晶体管，所述发光件阵列包括阳极层、阴极层和设置在所述阳极层和所述阴极层之间的发光层。所述阳极层包括多个阳极，所述阳极与所述薄膜晶体管的漏极一一对应的连接。
通常通过在发光层的上方溅射氧化铟锡(ITO)等透明材料或者蒸镀反射率好的透明材料来形成阴极层。如果通过溅射ITO的方式形成阴极层的话，所述发光层则容易受到损伤，并降低所述有机发光二极管显示面板的发光效率。
如上文中所述，还可以通过蒸镀反射率好的透明材料的方式形成阴极层，但是通过这种方式形成的阴极层通常具有较大的电阻，在显示时会产生较大的电阻压降(IR Drop)，最终降低显示面板的画面质量。
因此，如何防止由于阴极电阻压降较大而导致有机发光二极管显示面板的画面质量降低成为本领域亟待解决的技术问题。
发明内容
本发明的目的在于提供一种显示基板、包括该显示基板的显示面板、所述显示基板的制造方法以及该制造方法中所用到的掩膜板，用于解决由于阴极电阻压降较大而导致的显示面板在显示时的画面质量较差的问题。
为了实现上述目的，作为本发明的一个方面，提供一种显示基板，包括阳极层、阴极层和设置在所述阳极层和所述阴极层之间的发光层，所述阳极层包括多个阳极，所述发光层包括多个发光区，其中，所述显示基板还包括至少一个辅助电极，所述辅助电极与所述阳极绝缘间隔开，且所述辅助电极与所述阴极层并联接触，使得所述辅助电极与所述阴极层并联后的整体电阻小于所述阴极层自身的电阻。
优选地，所述辅助电极与所述阳极层同层设置。
优选地，所述显示基板还包括间隔件，所述辅助电极的两侧分别形成有绝缘间隔，所述间隔件的一部分设置在相应的所述绝缘间隔中，另一部分凸出于所述阳极层，以将所述辅助电极与所述阳极绝缘间隔开。
优选地，所述间隔件为多对，所述多对间隔件将所述显示基板划分为多个阳极区域和多个辅助电极区域，每个所述阳极区域内均设置有至少一个所述阳极和所述发光区，每个所述辅助电极区域内均设置有所述辅助电极，所述辅助电极区域设置在所述阳极区域的周围，所述辅助电极区域的宽度小于所述阳极区域的宽度，所述阴极层的一部分位于所述辅助电极区域的一对所述间隔件之间的空隙中，以将所述阴极层与所述辅助电极电连接。
优选地，所述间隔件包括沿所述显示基板的横向延伸的行间隔件和沿所述显示基板的纵向延伸的列间隔件。
优选地，所述辅助电极两侧的两个所述阳极区域内形成的所述发光区的形状不同。
优选地，所述显示基板还包括将所述显示基板划分为多个像素单元的间隔件，所述间隔件的一部分贯穿所述阳极层，另一部分位于所述阳极层上方。
优选地，每个所述辅助电极对应有一个所述间隔件，多个所述辅助电极连接成网状，每个所述辅助电极的两侧分别形成有绝缘间隔，每个间隔件包括分别设置在相对应的所述辅助电极两侧的所述绝缘间隔中的插入部和连接两个所述插入部的连接部，至少一个所述间隔件的所述连接部上形成有用于暴露所述辅助电极的过孔，所述阴极 层通过所述过孔与所述辅助电极并联。
优选地，所述间隔件围成多个区域且相邻两个所述区域的形状不同，所述发光区形成于所述区域内。
作为本发明的另一个方面，提供一种显示面板，包括本发明所提供的上述显示基板。
作为本发明的再一个方面，提供一种显示基板的制造方法，包括以下步骤：
形成发光件阵列，该形成发光件阵列的步骤包括：
形成阳极层和至少一个辅助电极，所述阳极层包括多个阳极，所述辅助电极与所述阳极绝缘间隔开；
形成发光层，所述发光层包括多个发光区；
形成阴极层，所述阴极层与所述辅助电极并联接触，使得所述辅助电极与所述阴极层并联后的整体电阻小于所述阴极层自身的电阻。
优选地，所述形成阳极层和至少一个辅助电极的步骤包括同层设置所述阳极层和所述至少一个辅助电极。
优选地，形成阳极层和至少一个辅助电极的步骤包括：
形成阳极材料层；
在阳极材料层上形成多个阳极区域和多个辅助电极区域，所述辅助电极区域和与该辅助电极区域相邻的所述阳极区域之间形成有绝缘间隔，且每个所述阳极区域内包括至少一个所述阳极，多个所述辅助电极连接成网状；
在形成阳极层和至少一个辅助电极的步骤和形成发光层的步骤之间，所述制造方法还包括：
在各个所述绝缘间隔中形成间隔件，所述间隔件的一部分设置在所绝缘间隔中，所述间隔件的另一部分凸出于所述阳极层；
所述形成阴极层的步骤包括在一对之间形成有所述辅助电极的所述间隔件之间的空隙中沉积形成阴极层的材料，以使得所述阴极层与所述辅助电极并联连接。
优选地，形成发光层的步骤包括：
将掩膜板设置在形成有所述阳极层的衬底基板上方，其中，所述掩膜板包括对应于多个所述阳极区域的多个开口部和对应于至少一个所述辅助电极的遮挡部；
蒸镀形成所述发光层的材料，以在多个所述阳极区域的上方沉积形成多个所述发光区。
优选地，所述多个阳极区域排列为多行多列。
优选地，所述辅助电极两侧的两个所述阳极区域的形状不同，以使得沉积在该两个阳极区域中的发光区的形状不同。
优选地，形成阳极层和至少一个辅助电极的步骤包括：
形成阳极材料层；
在阳极材料层上形成多个贯穿所述阳极材料层的绝缘间隔，以将所述阳极材料层划分为多个像素单元；
在形成阳极层和至少一个辅助电极的步骤和形成发光层的步骤之间，所述制造方法还包括：
形成包括间隔件的图形，所述间隔件的一部分位于所述绝缘间隔中，另一部分位于所述阳极层上方。
优选地，多个所述绝缘间隔中的至少一个包括第一间隔和第二间隔，所述第一间隔和所述第二间隔之间形成有所述辅助电极，所述辅助电极对应的所述间隔件包括分别设置在该所述辅助电极两侧的所述绝缘间隔中的插入部和连接两个所述插入部的连接部；
所述制造方法还包括在形成发光层的步骤和形成阴极层的步骤之间在所述连接部上形成用于暴露所述辅助电极的过孔的步骤；
所述形成阴极层的步骤包括在所述过孔中沉积形成阴极层的材料，以将所述阴极层与所述辅助电极并联。
优选地，形成发光层的步骤包括：
将掩膜板设置在形成有所述阳极层的衬底基板上方，其中，所述掩膜板包括多个开口部和将所述多个开口部间隔开的多个遮挡部，所述遮挡部对应于所述辅助电极；
蒸镀形成所述发光层的材料，以在所述开口部对应的位置的上方沉积形成所述所述发光区。
优选地，所述间隔件围成多个区域且相邻两个所述区域的形状不同，所述发光区形成于所述区域内。
作为本发明的还一个方面，提供一种掩膜板，所述掩膜板用于本发明所提供的上述制造方法，其中，所述掩膜板包括多个开口部和对应于至少一个所述辅助电极的遮挡部，所述遮挡部将相邻的所述开口部间隔开。
当包括本发明所提供的显示基板的显示面板工作时，在向阴极层通电时，电流同时会传导至辅助电极。由于辅助电极与阴极层并联形成组合件，且该组合件的电阻小于阴极层本身的电阻，因此，与未设辅助电极的显示基板相比，本发明所提供的显示基板的阴极电阻压降(即，IR drop)较小，使得电信号在阴极层以及辅助电极中的损失也相对较小，从而可以获得相对较高的画面质量。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1是形成有阳极层的基板的示意图；
图2是形成有间隔件的基板的示意图；
图3是形成有发光层的基板的示意图；
图4是形成有阴极层的基板的示意图；
图5是封装后的基板的示意图；
图6是形成发光层时用到的掩膜板的一种实施方式的示意图；
图7是形成发光层时用到的掩膜板的另一种实施方式的示意图。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
如图5所示，作为本发明的一个方面，提供一种显示基板，所 述显示基板包括阳极层、阴极层60和设置在所述阳极层和所述阴极层60之间的发光层，所述阳极层包括多个阳极21，所述发光层包括多个发光区50，其中，所述阳极层还包括至少一个辅助电极22，辅助电极22与阳极21绝缘间隔开，且辅助电极22与阴极层60并联接触，使得辅助电极22与阴极层60并联后的整体电阻小于阴极层60自身的电阻。
在向阴极层60通电时，电流同时会传导至辅助电极22。由于辅助电极22与阴极层60并联形成组合件，且该组合件的电阻小于阴极层60本身的电阻，因此，与未设辅助电极22的显示基板相比，本发明所提供的显示基板的阴极电阻压降(即，IR drop)较小，使得电信号在阴极层60以及辅助电极22中的损失也相对较小，从而可以获得相对较高的画面质量。
应当指出的是，每个阳极21的上方均设置有由形成所述发光层的材料形成的发光区50，但是在辅助电极的上方并未设置有形成所述发光层的材料。
在本发明中，阴极层60可以通过接触过孔与辅助电极22并联接触，也可以通过其他方式与辅助电极22并联接触。并且，在本发明中，对辅助电极22的设置位置并不做具体限制，只要将辅助电极22设置在不影响显示面板的正常显示的位置即可。
本领域技术人员应当理解的是，所述阳极层、所述发光层和所述阴极层组成了发光件阵列，所述发光件阵列包括多个发光件。换言之，多个所述发光件的阳极形成为所述阳极层，多个所述发光件的发光区形成为所述发光层，多个所述发光件的阴极形成为所述阴极层。所述显示基板还包括设置在所述发光件阵列下方的薄膜晶体管阵列，所述薄膜晶体管阵列中的薄膜晶体管形成像素电路，用于驱动发光件发光。所述薄膜晶体管阵列中包括多个驱动薄膜晶体管10，每个驱动薄膜晶体管10对应一个发光件，发光件的阳极通过过孔与驱动薄膜晶体管10的漏极相连。
在本发明中，对辅助电极22的数量也不做具体限制，例如，可以设置一个辅助电极22，也可以设置多个辅助电极22。当设置一个 辅助电极22时，辅助电极22可以为设置在各像素边缘的、形成为一体的网格状辅助电极。
在本发明中，对辅助电极22与阳极21之间的相对位置关系并没有特殊的规定，只要辅助电极22可以与阳极21设置为绝缘间隔开即可。例如，辅助电极22可以设置在阳极21的上方，且在阳极21与辅助电极22之间设置绝缘层，或者作为本发明的一种优选实施方式，辅助电极22可以与阳极层中同层设置。将辅助电极22设置在阳极层中的优点在于，可以利用同一构图工艺同时形成阳极21和辅助电极22，简化了显示基板的制造工艺，降低了显示基板的制造难度。制造显示基板的具体制造方法将在下文中详细描述，这里先不赘述。容易理解的是，辅助电极22和阳极21由相同的材料形成。形成的所述阳极层的结构可以为两层ITO之间夹反射率较好的材料(例如，可以为铝、银、金、钛、钼中的任意一种，或者上述任意一种的合金)。辅助电极22和阳极21同层设置的另一个优点在于，可以提高反射率，进而提高显示面板的亮度。
在辅助电极22与所述阳极层同层设置时，辅助电极22与阳极21设置为绝缘间隔开。例如，可以在辅助电极22与阳极21之间设置绝缘间隔23(参见图1)。容易理解的是，所述绝缘间隔中同样不设置形成所述发光层的材料。
作为本发明的一种优选实施方式，所述显示基板还可以包括将辅助电极22与阳极21绝缘间隔开的间隔件40。间隔件40可以确保辅助电极22与阳极21可靠地绝缘间隔开。在本发明中，对间隔件40的具体形状并不做具体限定，只要其能够将辅助电极22与阳极21绝缘间隔开即可。例如，每个辅助电极22的两侧分别形成有绝缘间隔23，每个所述绝缘间隔23中均设置有间隔件40，间隔件40的一部分设置在相应的绝缘间隔23中，另一部分凸出于所述阳极层，以将辅助电极22和与之相邻的阳极21绝缘间隔开。
如上文中所述，辅助电极22应当设置在不影响显示面板正常发光的位置。例如，可以将辅助电极22设置在阳极21的周围。相应地，设置多对间隔件40，所述多对间隔件40将所述显示基板划分为多个 阳极区域和多个辅助电极区域，每个所述阳极区域内均设置有至少一个阳极和由形成发光层的材料形成的发光区50，每个所述辅助电极区域内均设置有辅助电极22，所述辅助电极区域设置在所述阳极区域的周围。为了使所述显示面板具有较高的亮度，优选地，所述辅助电极区域的宽度小于所述阳极区域的宽度。容易理解的是，阳极21设置在阳极区域中，辅助电极22和间隔件40均设置在所述辅助电极区域中。阴极层60的一部分位于一对间隔件40之间的辅助电极区域中，以将阴极层60与辅助电极22电连接。
在本发明中，对每个阳极区域内设置的阳极的数量并不做限定，例如，可以在每个阳极区域内设置多个阳极，也可以在每个阳极区域内设置一个阳极。应当理解的是，当每个阳极区域内均设置有多个阳极时，同一个阳极区域内的多个阳极之间通过像素定义件互相绝缘间隔开。
作为本发明的一种具体实施方式，所述间隔件可以包括沿所述显示基板的横向延伸的行间隔件和沿所述显示基板的纵向延伸的列间隔件。图6所示的是发光层为白光材料时用于形成根据这种实施方式的显示基板的掩膜板。如图6中所示，所述掩膜板包括开口部81和遮挡部82。开口部81对应于阳极区域，遮挡部82对应于辅助电极区域。由此可知，阳极区域的形状可以为矩形，而辅助电极区域则为网格状，行间隔件形成在沿图6中的左右方向延伸的遮挡部对应的区域中，列间隔件形成在沿图6中的上下方向延伸的遮挡部对应的区域中。
图6中所示的是一种规则形状的掩膜板，利用这种掩膜板形成的显示基板中，任意一个辅助电极22两侧的两个阳极区域的形状均相同，也就是说，辅助电极两侧的两个发光区的形状相同。这种掩膜板的优点在于，制造工艺简单，成本较低。
作为本发明的另一种实施方式，任意一个辅助电极两侧的两个所述阳极区域的形状可以不同，因此，该两个阳极区域上方对应的发光区的形状也不相同。图7中所示的是形成这种显示基板的掩膜板的示意图。该掩膜板包括开口部81和遮挡部82。开口部81对应于发 光件区，遮挡部82对应于辅助电极区域。如图中所示，辅助电极两侧的两个开口部81的形状可以不同，因此，利用这种掩膜板形成的显示基板中，辅助电极两侧的发光件区也可以不同。使用这种掩膜板的优点在于，可以防止显示面板在显示时形成云纹(Mura)缺陷。
生产者可以根据具体的产品要求使用图6中所示的掩膜板或图7中所示的掩膜板。
在本发明中，对显示基板的具体类型并不做具体的限定，例如，所述显示基板可以为WOLED显示基板，在这种情况中下，所述显示基板还包括将所述显示基板划分为多个像素单元的间隔件，所述间隔件的一部分贯穿所述阳极层，另一部分位于所述阳极层上方。即，间隔件可以用作像素定义件。
需要说明的是，所述显示基板也可以为RGB分离模式，在这种情况下，因为每一种颜色的子像素都是单独制作的，所以不需要单独制作用于遮挡辅助电极的掩膜板。
作为本发明的一种优选实施方式，每个所述辅助电极对应有一个所述间隔件，多个所述辅助电极连接成网状，每个所述辅助电极的两侧分别形成有绝缘间隔，每个间隔件包括分别设置在相对应的所述辅助电极两侧的所述绝缘间隔中的插入部和连接两个所述插入部的连接部，至少一个所述连接部上形成有用于暴露所述辅助电极的过孔，所述阴极层通过所述过孔与所述辅助电极并联接触。也就是说，所述显示基板包括至少一个连接所述辅助电极和所述阴极层的过孔。由于多个辅助电极连接成网状，因此，只要通过一个过孔即可将所述显示基板的阴极层与所述辅助电极并联接触。
在这种实施方式中，为了避免显示时出现云纹缺陷，优选地，所述间隔件围成多个区域且相邻两个所述区域的形状不同(即，形成的发光区的形状不同)。
优选地，如图5所示，所述发光件阵列和所述薄膜晶体管阵列之间可以设置有平坦化层30，阳极21通过贯穿平坦化层30的过孔15与所述驱动薄膜晶体管10的漏极相连。容易理解的是，所述显示基板还可以包括封装层70。
作为本发明的另一方面，提供一种显示面板，所述显示面板包括显示基板，其中，所述显示基板为本发明所提供的上述显示基板。
由于所述显示基板中设置有与阴极层60并联接触的辅助电极22，且阴极层60与辅助电极22形成的组合件的电阻小于阴极层60自身的电阻，因此，在向所述显示基板提供信号时，阴极层60与辅助电极22形成的组合件的压降较小，从而使得所显示面板能够获得较高的画面质量。
所述显示面板可以用于电视、手机、平板电脑等电子设备中。
作为本发明的另一个方面，提供一种显示基板的制造方法，其中，所述制造方法包括以下步骤：
形成发光件阵列，该形成发光件阵列的步骤包括：
形成阳极层和至少一个辅助电极22，所述阳极层包括多个阳极21，阳极21与驱动薄膜晶体管10的漏极一一对应的连接，所述辅助电极22与阳极21绝缘间隔开(参见图1)；
形成发光层(参见图3)，所述发光层包括与多个阳极21一一对应的多个发光区50；
形成阴极层60(参见图4)，阴极层60与辅助电极22并联接触，使得辅助电极22与阴极层60并联后的整体电阻小于阴极层60自身的电阻。
如上文中所述，由于所述显示基板中设置有与阴极层60并联接触的辅助电极22，从而阴极层60与辅助电极22形成的组合件的电阻小于阴极层60自身的电阻，因此，在向所述显示基板提供信号时，阴极层60与辅助电极22形成的组合件的压降较小，从而使得所述显示面板能够获得较高的画面质量。
本领域技术人员应当理解的是，所述制造方法还包括在形成发光件阵列之前形成薄膜晶体管阵列的步骤，所述薄膜晶体管阵列包括多个驱动薄膜晶体管。在本发明中，对形成驱动薄膜晶体管阵列的具体方法并不做具体限定，只要可以形成用于驱动所述发光件阵列的驱动薄膜晶体管即可。
在本发明中，对形成阴极层60的具体工艺也不做具体限定。例 如，可以通过蒸镀或者溅射的方式形成阴极层60。
为了简化制造方法的步骤，优选地，所述形成阳极层和至少一个辅助电极22的步骤包括同层设置所述阳极层和所述至少一个辅助电极22。
具体地，形成阳极层和至少一个辅助电极的步骤可以包括：
形成阳极材料层；
在阳极材料层上形成多个阳极区域和多个辅助电极区域，所述辅助电极区域和与该辅助电极区域相邻的所述阳极区域之间形成有绝缘间隔，且每个所述阳极区域内包括至少一个所述阳极，多个所述辅助电极连接成网状。
为了确保阳极21和辅助电极22可靠地绝缘间隔开，优选地，在形成阳极层和至少一个辅助电极的步骤和形成发光层的步骤之间，所述制造方法还包括：
形成各个间隔件40(见图2)，间隔件40的一部分设置在阳极21和辅助电极22之间的所述绝缘间隔中，间隔件40的另一部分凸出于所述阳极层。
相应地，在形成阴极层的步骤中，在一对之间形成有所述辅助电极的所述间隔件之间的空隙中沉积形成阴极层的材料，以使得所述阴极层与所述辅助电极并联连接。
间隔件40可以由任意一种绝缘材料制成。例如，间隔件40可以由硅的氧化物(SiOx)或硅的氮化物(SiNx)形成。
容易理解的是，间隔件40也是通过构图工艺形成的。具体地，形成间隔件的步骤可以包括：
在阳极层上方形成一层绝缘材料膜；
在所述绝缘材料膜上形成一层光刻胶；
对所述光刻胶进行曝光显影，以在光刻胶中形成对应于所述间隔件的图形；
以曝光显影后的光刻胶作为掩膜对所述绝缘材料膜进行蚀刻，以形成所述间隔件。
当然，也可以通过其他方法形成间隔件40，这里不再赘述。
优选地，形成发光层的步骤可以包括：
将掩膜板(如图6和图7所示)设置在形成有所述阳极层的衬底基板上方，其中，所述掩膜板包括对应于多个所述阳极区域的多个开口部81和对应于至少一个所述辅助电极的遮挡部82；
蒸镀形成所述发光层的材料，以在多个所述阳极区域的上方沉积形成多个发光区50。
容易理解的是，此处所述的“形成有阳极层的衬底基板”并非指所述衬底基板上仅形成有阳极层，而是指，所述衬底基板上除了形成有所述阳极层之外，还形成有其他的结构(例如，平坦化层30、薄膜晶体管阵列等)。
形成的所述阳极层的结构可以为两层ITO之间夹反射率较好的材料(例如，可以为铝、银、金、钛、钼中的任意一种，或者上述任意一种的合金)。
如上文中所述，辅助电极22可以设置在阳极21的周围。
作为本发明的一种实施方式，可以设置多行多列阳极21。可以利用图6中所示的掩膜板形成排列为矩阵形式的阳极。这种掩膜板的结构简单，总体成本较低。
作为本发明的另一种实施方式，辅助电极两侧的两个所述阳极区域的形状可以不同，因此，相应的两个发光区50的形状也不同。可以利用图7中所示的掩膜板形成上述发光区。这种掩膜板形成的显示基板在于用于显示面板的显示时，具有较少的云纹(Mura)缺陷。
如上文中所述，所述薄膜晶体管阵列和所述发光件阵列之间还可以包括平坦化层30，因此，优选地，所述制造方法还包括在所述形成薄膜晶体管阵列的步骤和所述形成发光件阵列的步骤之间进行的步骤：
形成平坦化材料层；
形成贯穿所述平坦化材料层的过孔，所述过孔位于驱动薄膜晶体管10的漏极上方；其中，所述形成阳极层的步骤中，形成所述阳极层的材料填充在所述过孔中，使得所述阳极通过所述过孔与所述驱动薄膜晶体管10的漏极相连。
在形成了阴极层60之后，所述制造方法还可以包括：
形成封装层70。
如上文中所述，当所述显示基板为WOLED显示基板时，所述显示基板还可以包括用作像素定义件的间隔件，在这种情况下，形成阳极层和至少一个辅助电极的步骤包括：
形成阳极材料层；
在阳极材料层上形成多个贯穿所述阳极材料层的绝缘间隔，以将所述阳极材料层划分为多个像素单元；
所述制造方法还包括：
形成包括间隔件的图形，所述间隔件的一部分位于所述绝缘间隔中，另一部分位于所述阳极层上方。
进一步地，多个所述绝缘间隔中的至少一个包括第一间隔和第二间隔，所述第一间隔和所述第二间隔之间形成有所述辅助电极，所述辅助电极对应的所述间隔件包括分别设置在该辅助电极两侧的所述绝缘间隔中的插入部和连接两个所述插入部的连接部；
所述制造方法还包括在形成发光层的步骤和形成阴极层的步骤之间的在所述连接部上形成用于暴露所述辅助电极的过孔的步骤；
所述形成阴极层的步骤包括在所述过孔中沉积形成阴极层的材料，以将所述阴极层与所述辅助电极并联接触。
同样，可以利用掩模蒸镀法形成所述发光层，具体地，形成发光层的步骤包括：
将掩膜板设置在形成有所述阳极层的衬底基板上方，其中，所述掩膜板包括多个开口部和将所述多个开口部间隔开的多个遮挡部，所述遮挡部对应于所述辅助电极；
蒸镀形成所述发光层的材料，以在所述开口部对应的位置的上方沉积形成所述发光区。
为了防止在显示时产生云纹缺陷，优选地，所述间隔件围成多个区域且相邻两个所述区域的形状不同，所述发光区形成于所述区域内。
作为本发明的再一个方面，提供一种掩膜板，所述掩膜板用于 本发明所提供的上述制造方法，其中，如图6和图7所示，所述掩膜板包括多个开口部81和对应于至少一个所述辅助电极的遮挡部82，如图中所示，遮挡部82用于将相邻的开口部81间隔开。
应当理解的是，可以只在利用蒸镀法形成发光层的步骤中使用所述掩膜板。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (21)

  1. 一种显示基板，包括阳极层、阴极层和设置在所述阳极层和所述阴极层之间的发光层，所述阳极层包括多个阳极，所述发光层包括多个发光区，其中，所述显示基板还包括至少一个辅助电极，所述辅助电极与所述阳极绝缘间隔开，且所述辅助电极与所述阴极层并联接触，使得所述辅助电极与所述阴极层并联后的整体电阻小于所述阴极层自身的电阻。
  2. 根据权利要求1所述的显示基板，其中，所述辅助电极与所述阳极层同层设置。
  3. 根据权利要求2所述的显示基板，还包括间隔件，所述辅助电极的两侧分别形成有绝缘间隔，所述间隔件的一部分设置在相应的所述绝缘间隔中，另一部分凸出于所述阳极层，以将所述辅助电极与所述阳极绝缘间隔开。
  4. 根据权利要求3所述的显示基板，其中，所述间隔件为多对，所述多对间隔件将所述显示基板划分为多个阳极区域和多个辅助电极区域，每个所述阳极区域内均设置有至少一个所述阳极和所述发光区，每个所述辅助电极区域内均设置有所述辅助电极，所述辅助电极区域设置在所述阳极区域的周围，所述辅助电极区域的宽度小于所述阳极区域的宽度，所述阴极层的一部分位于所述辅助电极区域的一对所述间隔件之间的空隙中，以将所述阴极层与所述辅助电极电连接。
  5. 根据权利要求4所述的显示基板，其中，所述间隔件包括沿所述显示基板的横向延伸的行间隔件和沿所述显示基板的纵向延伸的列间隔件。
  6. 根据权利要求4所述的显示基板，其中，所述辅助电极两侧的两个所述阳极区域内形成的所述发光区的形状不同。
  7. 根据权利要求2所述的显示基板，还包括将所述显示基板划分为多个像素单元的间隔件，所述间隔件的一部分贯穿所述阳极层，另一部分位于所述阳极层上方。
  8. 根据权利要求7所述的显示基板，其中，每个所述辅助电极对应有一个所述间隔件，多个所述辅助电极连接成网状，每个所述辅助电极的两侧分别形成有绝缘间隔，每个间隔件包括分别设置在相对应的所述辅助电极两侧的所述绝缘间隔中的插入部和连接两个所述插入部的连接部，至少一个所述间隔件的所述连接部上形成有用于暴露所述辅助电极的过孔，所述阴极层通过所述过孔与所述辅助电极并联。
  9. 根据权利要求8所述的显示基板，其中，所述间隔件围成多个区域且相邻两个所述区域的形状不同，所述发光区形成于所述区域内。
  10. 一种显示面板，包括权利要求1至9中任意一项所述的显示基板。
  11. 一种显示基板的制造方法，包括以下步骤：
    形成发光件阵列，该形成发光件阵列的步骤包括：
    形成阳极层和至少一个辅助电极，所述阳极层包括多个阳极，所述辅助电极与所述阳极绝缘间隔开；
    形成发光层，所述发光层包括多个发光区；
    形成阴极层，所述阴极层与所述辅助电极并联接触，使得所述辅助电极与所述阴极层并联后的整体电阻小于所述阴极层自身的电阻。
  12. 根据权利要求11所述的制造方法，其中，所述形成阳极层和至少一个辅助电极的步骤包括同层设置所述阳极层和所述至少一个辅助电极。
  13. 根据权利要求12所述的制造方法，其中，形成阳极层和至少一个辅助电极的步骤包括：
    形成阳极材料层；
    在阳极材料层上形成多个阳极区域和多个辅助电极区域，所述辅助电极区域和与该辅助电极区域相邻的所述阳极区域之间形成有绝缘间隔，且每个所述阳极区域内包括至少一个所述阳极，多个所述辅助电极连接成网状；
    在形成阳极层和至少一个辅助电极的步骤和形成发光层的步骤之间，所述制造方法还包括：
    在各个所述绝缘间隔中形成间隔件，所述间隔件的一部分设置在所绝缘间隔中，所述间隔件的另一部分凸出于所述阳极层；
    所述形成阴极层的步骤包括在一对之间形成有所述辅助电极的所述间隔件之间的空隙中沉积形成阴极层的材料，以使得所述阴极层与所述辅助电极并联连接。
  14. 根据权利要求13所述的制造方法，其中，形成发光层的步骤包括：
    将掩膜板设置在形成有所述阳极层的衬底基板上方，其中，所述掩膜板包括对应于多个所述阳极区域的多个开口部和对应于至少一个所述辅助电极的遮挡部；
    蒸镀形成所述发光层的材料，以在多个所述阳极区域的上方沉积形成多个所述发光区。
  15. 根据权利要求14所述的制造方法，其中，所述多个阳极区域排列为多行多列。
  16. 根据权利要求14所述的制造方法，其中，所述辅助电极两侧的两个所述阳极区域的形状不同，以使得沉积在该两个阳极区域中的发光区的形状不同。
  17. 根据权利要求12所述的制造方法，其中，形成阳极层和至少一个辅助电极的步骤包括：
    形成阳极材料层；
    在阳极材料层上形成多个贯穿所述阳极材料层的绝缘间隔，以将所述阳极材料层划分为多个像素单元；
    在形成阳极层和至少一个辅助电极的步骤和形成发光层的步骤之间，所述制造方法还包括：
    形成包括间隔件的图形，所述间隔件的一部分位于所述绝缘间隔中，另一部分位于所述阳极层上方。
  18. 根据权利要求17所述的制造方法，其中，多个所述绝缘间隔中的至少一个包括第一间隔和第二间隔，所述第一间隔和所述第二间隔之间形成有所述辅助电极，所述辅助电极对应的所述间隔件包括分别设置在该辅助电极两侧的所述绝缘间隔中的插入部和连接两个所述插入部的连接部；
    所述制造方法还包括在形成发光层的步骤和形成阴极层的步骤之间在所述连接部上形成用于暴露所述辅助电极的过孔的步骤；
    所述形成阴极层的步骤包括在所述过孔中沉积形成阴极层的材料，以将所述阴极层与所述辅助电极并联。
  19. 根据权利要求18所述的制造方法，其中，形成发光层的步骤包括：
    将掩膜板设置在形成有所述阳极层的衬底基板上方，其中，所述掩膜板包括多个开口部和将所述多个开口部间隔开的多个遮挡部，所述遮挡部对应于所述辅助电极；
    蒸镀形成所述发光层的材料，以在所述开口部对应的位置的上 方沉积形成所述发光区。
  20. 根据权利要求18或19所述的制造方法，其中，所述间隔件围成多个区域且相邻两个所述区域的形状不同，所述发光区形成于所述区域内。
  21. 一种掩膜板，所述掩膜板用于权利要求14至20中任意一项所述的制造方法，其中，所述掩膜板包括多个开口部和对应于至少一个所述辅助电极的遮挡部，所述遮挡部将相邻的所述开口部间隔开。
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